JP2002179882A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor deviceInfo
- Publication number
- JP2002179882A JP2002179882A JP2000373379A JP2000373379A JP2002179882A JP 2002179882 A JP2002179882 A JP 2002179882A JP 2000373379 A JP2000373379 A JP 2000373379A JP 2000373379 A JP2000373379 A JP 2000373379A JP 2002179882 A JP2002179882 A JP 2002179882A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- general formula
- represented
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 61
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 239000000203 mixture Substances 0.000 title claims abstract description 36
- 239000004593 Epoxy Substances 0.000 claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000011256 inorganic filler Substances 0.000 claims abstract description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 11
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000005011 phenolic resin Substances 0.000 claims description 21
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 23
- 229920005989 resin Polymers 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 abstract description 7
- IFVTZJHWGZSXFD-UHFFFAOYSA-N biphenylene Chemical group C1=CC=C2C3=CC=CC=C3C2=C1 IFVTZJHWGZSXFD-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229920001568 phenolic resin Polymers 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000011342 resin composition Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 9
- 238000005336 cracking Methods 0.000 description 8
- 125000003700 epoxy group Chemical group 0.000 description 8
- 239000003063 flame retardant Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 150000001463 antimony compounds Chemical class 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 239000004203 carnauba wax Substances 0.000 description 3
- 235000013869 carnauba wax Nutrition 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- -1 amine compounds Chemical class 0.000 description 2
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- QGHXERRNIBBNFZ-UHFFFAOYSA-N B([O-])([O-])[O-].C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound B([O-])([O-])[O-].C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC2=CC=CC=C12)C(=O)O.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 QGHXERRNIBBNFZ-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 102100029203 F-box only protein 8 Human genes 0.000 description 1
- 101100334493 Homo sapiens FBXO8 gene Proteins 0.000 description 1
- 101100028952 Mus musculus Pdia2 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、成形性、耐半田ク
ラック性、難燃性、耐湿信頼性及び高温保管性に優れた
半導体封止用エポキシ樹脂組成物及び半導体装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device which are excellent in moldability, solder crack resistance, flame retardancy, moisture resistance reliability and high-temperature storage property.
【０００２】[0002]
【従来の技術】電子機器の小型化、軽量化、高性能化の
市場動向において、半導体素子の高集積化が年々進み、
又半導体装置の表面実装化が促進されるなかで、半導体
素子の封止に用いられているエポキシ樹脂組成物への要
求は益々厳しいものとなってきている。特に半導体装置
の表面実装化が一般的になってきている現状では、吸湿
した半導体装置が半田リフロー処理時に高温にさらさ
れ、半導体素子やリードフレームとエポキシ樹脂組成物
の硬化物との界面に剥離が発生し、ひいては硬化物にク
ラックを生じる等、半導体装置の信頼性を大きく損なう
不良が生じ、これらの不良の防止、即ち耐半田クラック
性の向上が大きな課題となっている。この課題に対し、
ＩＣ、ＬＳＩ等の半導体素子の封止用エポキシ樹脂組成
物に使用されるエポキシ樹脂や硬化剤であるフェノール
樹脂の改良により、その向上が図られてきた。更に封止
材料では解決できない問題点に対しては、リードフレー
ムの形状変更、特に半導体素子と接着されるアイランド
の形状変更により、対策が行われた。ウインドウ・パッ
ドフレームがこれに相当する。2. Description of the Related Art In the market trend of miniaturization, weight reduction and high performance of electronic equipment, the integration of semiconductor elements has been increasing year by year.
In addition, as the surface mounting of semiconductor devices is promoted, the demand for epoxy resin compositions used for encapsulating semiconductor elements is becoming increasingly severe. In particular, in the current situation where the surface mounting of semiconductor devices is becoming common, the semiconductor device that has absorbed moisture is exposed to high temperatures during the solder reflow process, and peels off at the interface between the semiconductor element or lead frame and the cured product of the epoxy resin composition. In addition, defects that greatly impair the reliability of the semiconductor device, such as cracks in the cured product, occur, and prevention of these defects, that is, improvement in solder crack resistance, has become a major issue. To address this challenge,
Improvements have been made by improving epoxy resins used in epoxy resin compositions for encapsulating semiconductor elements such as ICs and LSIs and phenolic resins as curing agents. Further, for the problems that cannot be solved by the sealing material, measures have been taken by changing the shape of the lead frame, particularly by changing the shape of the island bonded to the semiconductor element. A window pad frame corresponds to this.
【０００３】近年、環境負荷物質の撤廃の一環として、
鉛フリー半田への代替化が進められている。鉛フリー半
田では、従来の半田に比べ融点が高いため表面実装時の
リフロー温度は従来より２０℃程度高い、２６０℃が必
要とされる。鉛フリー半田対応のためのリフロー温度の
変更によりウインドウ・パッドフレームでもエポキシ樹
脂組成物の硬化物とパッドの剥離、半導体素子と半導体
樹脂ペーストの剥離に起因する半導体装置のクラックの
問題が生じてきた。このため、２６０℃表面実装時の耐
半田クラック性向上を目指して様々な改良が進められて
きたが、そのいずれにおいても、完全なる解決策とはな
らず、更なる改良が望まれている。In recent years, as part of the elimination of environmentally hazardous substances,
Replacement with lead-free solder is being promoted. Since the melting point of the lead-free solder is higher than that of the conventional solder, the reflow temperature at the time of surface mounting is required to be 260 ° C., which is about 20 ° C. higher than the conventional one. Changes in the reflow temperature for lead-free soldering have caused problems with semiconductor devices cracking due to peeling of the cured product of the epoxy resin composition and the pad and peeling of the semiconductor element and the semiconductor resin paste even in window / pad frames. . For this reason, various improvements have been promoted with the aim of improving the solder crack resistance during surface mounting at 260 ° C., but none of them is a complete solution, and further improvements are desired.
【０００４】又エポキシ樹脂組成物中には、難燃性を付
与するために臭素含有化合物等のハロゲン系難燃剤及び
アンチモン化合物が配合されている。近年、地球環境に
配慮した企業活動の重視により有害性のおそれのある物
質の削減・撤廃の動きがあり、ハロゲン系難燃剤及びア
ンチモン化合物を使用しないで、難燃性に優れたエポキ
シ樹脂組成物の開発が要求されている。これらに代わる
環境対応難燃剤としては、水酸化アルミニウムや水酸化
マグネシウム等の金属水酸化物や赤燐を含むエポキシ樹
脂組成物が提案されるようになってきているが、これら
の難燃剤も、これを用いた半導体装置の耐湿信頼性、高
温保管性に悪影響を及ぼし、更には成形性、硬化性共、
十分に満足の得られるエポキシ樹脂組成物が得られない
という問題があり、全ての要求に対応することができな
かった。[0004] Further, a halogen-based flame retardant such as a bromine-containing compound and an antimony compound are blended in the epoxy resin composition to impart flame retardancy. In recent years, there has been a movement to reduce or eliminate potentially harmful substances due to the importance of corporate activities in consideration of the global environment. Epoxy resin compositions with excellent flame retardancy without using halogen-based flame retardants and antimony compounds Development is required. As alternative environmentally friendly flame retardants, epoxy resin compositions containing metal hydroxides such as aluminum hydroxide and magnesium hydroxide and red phosphorus have been proposed, but also these flame retardants, This has an adverse effect on the moisture resistance reliability and high-temperature storage properties of semiconductor devices using this, and furthermore, both moldability and curability,
There was a problem that an epoxy resin composition that was sufficiently satisfactory could not be obtained, and it was not possible to meet all requirements.
【０００５】[0005]
【発明が解決しようとする課題】本発明は、成形性、耐
半田クラック性、難燃剤を含まなくとも難燃性、耐湿信
頼性及び高温保管性に優れた半導体封止用エポキシ樹脂
組成物及び半導体装置に関するものである。DISCLOSURE OF THE INVENTION The present invention relates to an epoxy resin composition for semiconductor encapsulation which is excellent in moldability, solder crack resistance, flame retardancy without containing a flame retardant, humidity resistance and high-temperature storage properties. The present invention relates to a semiconductor device.
【０００６】[0006]
【課題を解決するための手段】本発明は、 （１） （Ａ）一般式（１）で示されるエポキシ樹脂、
（Ｂ）一般式（２）で示されるフェノール樹脂、（Ｃ）
硬化促進剤、（Ｄ）、無機充填材及び（Ｅ）一般式
（３）で示されるグリシジルアミン型エポキシ化合物を
必須成分とするエポキシ樹脂組成物であって、（Ｅ）一
般式（３）で示されるグリシジルアミン型エポキシ化合
物が、全エポキシ樹脂組成物中０．１０〜２．０重量％
であることを特徴とする半導体封止用エポキシ樹脂組成
物、The present invention provides: (1) (A) an epoxy resin represented by the general formula (1):
(B) a phenolic resin represented by the general formula (2), (C)
An epoxy resin composition comprising a curing accelerator, (D), an inorganic filler and (E) a glycidylamine-type epoxy compound represented by the general formula (3) as essential components, wherein (E) a compound represented by the general formula (3) The glycidylamine type epoxy compound shown is 0.10 to 2.0% by weight of the total epoxy resin composition
An epoxy resin composition for semiconductor encapsulation,
【化４】 （式中のＲは、水素原子又は炭素数１〜４のアルキル基
から選択される基であり、互いに同一であっても、異な
っていても良い。ｎは平均値で、１〜５の正数）Embedded image (R in the formula is a group selected from a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and may be the same or different. N is an average value of 1 to 5 number)
【０００７】[0007]
【化５】 （式中のＲは、水素原子又は炭素数１〜４のアルキル基
から選択される基であり、互いに同一であっても、異な
っていても良い。ｎは平均値で、１〜５の正数）Embedded image (R in the formula is a group selected from a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and may be the same or different. N is an average value of 1 to 5 number)
【０００８】[0008]
【化６】 （式中のＲは、水素原子又は炭素数１〜３のアルキル基
から選択される基である。） （２） 第（１）項記載のエポキシ樹脂組成物を用いて
半導体素子を封止してなることを特徴とする半導体装
置、である。Embedded image (R in the formula is a group selected from a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.) (2) A semiconductor element is encapsulated with the epoxy resin composition described in (1). A semiconductor device characterized by the following.
【０００９】[0009]
【発明の実施の形態】以下、本発明を詳細に説明する。
本発明で用いられる一般式（１）で示されるエポキシ樹
脂は、エポキシ基間に疎水性構造を有することを特徴と
する。 一般式（１）で示されるエポキシ樹脂（Ａ）を
用いたエポキシ樹脂組成物の硬化物は、疎水性の構造を
多く含むことから吸湿率が低く、又架橋密度が低いた
め、 ガラス転移温度を越えた高温域での弾性率が低い
という特徴があり表面実装の半田付け時における熱応力
を低減し、耐半田クラック性、半田処理後の基材との密
着性に優れるという特徴を有している。一方、エポキシ
基間の疎水性構造は、剛直なビフェニル骨格であること
から、架橋密度が低い割には耐熱性の低下が少ないとい
う特徴を有する。一般式（１）で示されるエポキシ樹脂
の具体例を以下に示すが、これらに限定されるものでな
い。BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail.
The epoxy resin represented by the general formula (1) used in the present invention is characterized by having a hydrophobic structure between epoxy groups. A cured product of the epoxy resin composition using the epoxy resin (A) represented by the general formula (1) has a low moisture absorption rate due to a large amount of a hydrophobic structure and a low cross-linking density. It has the characteristic of low elastic modulus in the high temperature range exceeding it, reduces thermal stress at the time of surface mounting soldering, has excellent resistance to solder cracking, and excellent adhesion to the substrate after soldering I have. On the other hand, the hydrophobic structure between the epoxy groups has a rigid biphenyl skeleton, and therefore has a feature that the heat resistance is less reduced despite the low crosslinking density. Specific examples of the epoxy resin represented by the general formula (1) are shown below, but are not limited thereto.
【化７】 （式中のｎは平均値で、１〜５の正数）Embedded image (N in the formula is an average value and a positive number of 1 to 5)
【００１０】又これらのエポキシ樹脂は単独、もしくは
混合して用いても差し支えない。更には、一般式（１）
で示されるエポキシ樹脂の特徴を損なわない範囲で、分
子内にエポキシ基を有するモノマー、オリゴマー、ポリ
マー、例えばビスフェノールＡ型エポキシ樹脂、フェノ
ールノボラック型エポキシ樹脂、オルソクレゾールノボ
ラック型エポキシ樹脂、ナフトールノボラック型エポキ
シ樹脂、ジシクロペンタジエン変性フェノール型エポキ
シ樹脂、ビフェニル型エポキシ樹脂、スチルベン型エポ
キシ樹脂、トリフェノールメタン型エポキシ樹脂、アル
キル変性トリフェノールメタン型エポキシ樹脂、及びト
リアジン核含有エポキシ樹脂等のエポキシ樹脂を併用し
ても差し支えない。併用する場合の一般式（１）のエポ
キシ樹脂の配合量としては、全エポキシ樹脂中に７０重
量％以上が好ましい。７０重量％未満だとエポキシ樹脂
組成物が燃焼しやすくなったり、硬化物の吸湿率が多く
なったり、弾性率が高くなり、耐半田クラック性に悪影
響を及ぼすおそれがある。又下記の一般式（２）で示さ
れるフェノール樹脂を用いたり、無機充填材の配合量を
増加すれば、全エポキシ樹脂中の一般式（１）で示され
るエポキシ樹脂の配合量を少なくしても、難燃性を維持
できる。[0010] These epoxy resins may be used alone or in combination. Furthermore, the general formula (1)
Monomers, oligomers and polymers having an epoxy group in the molecule, such as bisphenol A type epoxy resin, phenol novolak type epoxy resin, orthocresol novolak type epoxy resin, naphthol novolak type epoxy, as long as the characteristics of the epoxy resin represented by are not impaired. Resin, epoxy resin such as dicyclopentadiene-modified phenolic epoxy resin, biphenyl-type epoxy resin, stilbene-type epoxy resin, triphenolmethane-type epoxy resin, alkyl-modified triphenolmethane-type epoxy resin, and epoxy resin containing triazine nucleus No problem. When used together, the amount of the epoxy resin represented by the general formula (1) is preferably 70% by weight or more based on the total epoxy resin. If the content is less than 70% by weight, the epoxy resin composition tends to burn, the cured product has a high moisture absorption rate, the elastic modulus increases, and the solder crack resistance may be adversely affected. When the phenol resin represented by the following general formula (2) is used or the amount of the inorganic filler is increased, the amount of the epoxy resin represented by the general formula (1) in all the epoxy resins is reduced. Can also maintain flame retardancy.
【００１１】本発明で用いられる一般式（２）で示され
るフェノール樹脂は、水酸基間に疎水性構造を有するこ
とを特徴とする。一般式（２）で示されるフェノール樹
脂を用いたエポキシ樹脂組成物の硬化物は、疎水性の構
造を多く含むことから吸湿率が低く、又架橋密度が低い
ため、 ガラス転移温度を越えた高温域での弾性率が低
いという特徴があり、表面実装の半田付け時における熱
応力を低減し、耐半田クラック性、半田処理後の基材と
の密着性に優れるという特徴を有している。一方、フェ
ニル基間の疎水性構造は剛直なビフェニル骨格であるこ
とから、架橋密度が低い割には耐熱性の低下が少ないと
いう特徴を有する。一般式（２）で示されるフェノール
樹脂の具体例を以下に示すが、これに限定されるもので
ない。The phenolic resin represented by the general formula (2) used in the present invention is characterized by having a hydrophobic structure between hydroxyl groups. The cured product of the epoxy resin composition using the phenolic resin represented by the general formula (2) has a low moisture absorption rate due to a large amount of a hydrophobic structure, and has a low crosslinking density. It has the characteristic that the elastic modulus is low in the region, the thermal stress at the time of surface mounting soldering is reduced, the solder crack resistance, and the adhesion to the base material after the solder processing are excellent. On the other hand, the hydrophobic structure between the phenyl groups has a rigid biphenyl skeleton, and therefore has a feature that the heat resistance is not significantly reduced despite the low crosslinking density. Specific examples of the phenol resin represented by the general formula (2) are shown below, but are not limited thereto.
【化８】 （式中のｎは平均値で、１〜５の正数）Embedded image (N in the formula is an average value and a positive number of 1 to 5)
【００１２】又これらのフェノール樹脂は単独、もしく
は混合して用いても差支えない。更には、一般式（２）
で示されるフェノール樹脂の特徴を損なわない範囲で、
分子内にフェノール性水酸基を有するモノマー、オリゴ
マー、ポリマー、例えばフェノールノボラック樹脂、ク
レゾールノボラック樹脂、フェノールアラルキル樹脂、
テルペン変性フェノール樹脂、ジシクロペンタジエン変
性フェノール樹脂、ビスフェノールＡ、トリフェノール
メタン等のフェノール樹脂を併用しても差し支えない。
併用する場合の一般式（２）で示されるフェノール樹脂
の配合量としては、全フェノール樹脂中に７０重量％以
上が好ましい。７０重量％未満だと燃焼しやすくなった
り、吸湿率が多くなったり、弾性率が高くなり、耐半田
クラック性に悪影響を及ぼすおそれがある。又一般式
（１）で示されるエポキシ樹脂を用いたり、無機充填材
の配合量を増加すれば、全フェノール樹脂中の一般式
（２）で示されるフェノール樹脂の配合量を少なくして
も、難燃性を維持できる。一般式（１）で示されるエポ
キシ樹脂と一般式（２）で示されるフェノール樹脂とを
組合せて用いた場合には、半導体装置の低吸湿性、吸湿
後の半田処理での耐半田クラック性、密着性等の信頼性
で高い効果が得られるので好ましい。全エポキシ樹脂の
エポキシ基と下記する一般式（３）で示されるグリシジ
ルアミン型エポキシ化合物のエポキシ基との合計のエポ
キシ基とフェノール樹脂のフェノール性水酸基の当量比
については、エポキシ基数／フェノール性水酸基数＝
０．７〜１．５の範囲が好ましく、この範囲を外れる
と、樹脂組成物の硬化性の低下、或いは硬化物のガラス
転移温度の低下、耐湿信頼性の低下等が生じるので好ま
しくない。These phenolic resins may be used alone or as a mixture. Furthermore, the general formula (2)
In the range that does not impair the characteristics of the phenolic resin indicated by,
Monomers, oligomers and polymers having a phenolic hydroxyl group in the molecule, for example, phenol novolak resin, cresol novolak resin, phenol aralkyl resin,
Terpene-modified phenolic resins, dicyclopentadiene-modified phenolic resins, and phenolic resins such as bisphenol A and triphenolmethane may be used in combination.
When used in combination, the amount of the phenolic resin represented by the general formula (2) is preferably 70% by weight or more based on all phenolic resins. If the content is less than 70% by weight, the composition tends to burn easily, has a high moisture absorption rate, has a high elastic modulus, and may adversely affect solder crack resistance. Also, if the epoxy resin represented by the general formula (1) is used or the amount of the inorganic filler is increased, even if the amount of the phenol resin represented by the general formula (2) in all the phenol resins is reduced, Can maintain flame retardancy. When the epoxy resin represented by the general formula (1) and the phenol resin represented by the general formula (2) are used in combination, the semiconductor device has low moisture absorption, solder cracking resistance in soldering after moisture absorption, This is preferable because a high effect can be obtained with reliability such as adhesion. The equivalent ratio of the total epoxy group of the epoxy group of all epoxy resins and the epoxy group of the glycidylamine type epoxy compound represented by the following general formula (3) to the phenolic hydroxyl group of the phenolic resin is represented by the number of epoxy groups / phenolic hydroxyl group. Number =
It is preferably in the range of 0.7 to 1.5, and out of this range, the curability of the resin composition decreases, the glass transition temperature of the cured product decreases, and the moisture resistance reliability undesirably decreases.
【００１３】本発明に用いる硬化促進剤（Ｃ）は、エポ
キシ基とフェノール性水酸基との硬化反応を促進させる
ものであればよく、一般に封止材料に使用されているも
のを広く使用することができる。例えばトリブチルアミ
ン、１，８−ジアザビシクロ（５，４，０）ウンデセン
−７等のアミン系化合物、テトラフェニルホスホニウム
・テトラナフトイックアシッドボレート、トリフェニル
ホスフィン等の有機リン系化合物、２−メチルイミダゾ
ール等のイミダゾール化合物等が挙げられ、これらの内
では、特に１，８−ジアザビシクロ（５，４，０）ウン
デセン−７が、各種基材に対する密着性の向上のために
有効であり、更にテトラフェニルホスホニウム・テトラ
ナフトイックアシッドボレートは、樹脂組成物の常温保
管特性を大幅に向上させる効果がある。これらの硬化促
進剤は、単独でも混合して用いても差し支えない。The curing accelerator (C) used in the present invention may be any one which promotes a curing reaction between an epoxy group and a phenolic hydroxyl group, and those generally used for a sealing material can be widely used. it can. For example, amine compounds such as tributylamine, 1,8-diazabicyclo (5,4,0) undecene-7, organic phosphorus compounds such as tetraphenylphosphonium / tetranaphthoic acid borate and triphenylphosphine, 2-methylimidazole and the like Among them, 1,8-diazabicyclo (5,4,0) undecene-7 is particularly effective for improving the adhesion to various substrates, and furthermore, tetraphenylphosphonium -Tetranaphthoic acid borate has the effect of significantly improving the room temperature storage characteristics of the resin composition. These curing accelerators may be used alone or as a mixture.
【００１４】本発明で用いられる無機充填材（Ｄ）は、
例えば、溶融シリカ、球状シリカ、結晶シリカ、２次凝
集シリカ、多孔質シリカ、２次凝集シリカ又は多孔質シ
リカを粉砕したシリカ、アルミナ、窒化珪素等が挙げら
れるが、溶融シリカ粉末、結晶シリカ粉末が好ましい。
又無機充填材（Ｄ）の形状としては、破砕状でも球状で
もかまわないが、耐半田クラック性を向上させるために
高充填し、その他、流動特性、機械強度及び熱的特性の
バランスの点から球状溶融シリカ粉末が好ましい。最大
粒径としては７５μｍ以下が好ましく、平均粒径として
は５〜２５μｍが好ましい。粒度分布としては広いもの
が、成形時の樹脂組成物の溶融粘度を低減するために有
効である。これらの無機充填材は単独でも混合して用い
てもよい。更にシランカップリング剤等で予め表面処理
をしたものを用いてもよい。無機充填材（Ｄ）の配合量
としては、全エポキシ樹脂組成物中に６５〜９５重量％
が好ましい。６５重量％未満だと、樹脂組成物の硬化物
の吸湿量が増大し、しかも半田処理温度での強度が低下
してしまうため、半田処理時に半導体装置にクラックが
生じやすくなり、一方９５重量％を越えると、樹脂組成
物の成形時の流動性が低下し、未充填やチップシフト、
パッドシフトが発生し易くなり好ましくない。The inorganic filler (D) used in the present invention comprises:
For example, fused silica, spherical silica, crystalline silica, secondary aggregated silica, porous silica, silica obtained by pulverizing secondary aggregated silica or porous silica, alumina, silicon nitride, etc. are mentioned. Is preferred.
The shape of the inorganic filler (D) may be a crushed shape or a spherical shape. However, in order to improve the solder cracking resistance, the filler is highly filled, and in addition, from the viewpoint of a balance between flow characteristics, mechanical strength and thermal characteristics. Spherical fused silica powder is preferred. The maximum particle size is preferably 75 μm or less, and the average particle size is preferably 5 to 25 μm. A wide particle size distribution is effective for reducing the melt viscosity of the resin composition during molding. These inorganic fillers may be used alone or as a mixture. Further, a material which has been previously surface-treated with a silane coupling agent or the like may be used. The amount of the inorganic filler (D) is 65 to 95% by weight in the total epoxy resin composition.
Is preferred. If the content is less than 65% by weight, the amount of moisture absorbed by the cured product of the resin composition increases, and the strength at the solder processing temperature is reduced. If it exceeds, the fluidity during molding of the resin composition decreases, unfilled or chip shift,
It is not preferable because pad shift easily occurs.
【００１５】本発明で用いられる一般式（３）で示され
るグリシジルアミン型エポキシ化合物は、構造用接着剤
の用途に使用され、エポキシ樹脂の中でも特に高い接着
力を有している。一般式（３）で示されるグリシジルア
ミン型エポキシ化合物は、全エポキシ樹脂組成物中に、
０．１〜２．０重量％配合しただけで無機及び有機部材
との高い接着性を示す。半田処理時に生じる半導体装置
のクラックは半導体封止樹脂とリードフレーム間の剥離
又は半導体封止樹脂とシリコンチップ間の剥離を起因と
しており、高接着性のグリシジルアミン型エポキシ化合
物は、これらの剥離を低減させることにより、半導体封
止樹脂の耐半田クラック性を著しく向上させる。 一般
式（３）で示されるグリシジルアミン型エポキシ化合物
は、液状であり、カップリング剤を添加する場合と同様
にして用いればよい。配合量が０．１重量％未満だと無
機及び有機部材と充分な接着力を得ることができず、
２．０重量％を越えると樹脂組成物の硬化物の難燃性が
低下するので好ましくない。グリシジルアミン型エポキ
シ化合物は、芳香族アミン特有の性質である高い反応性
を有しており、例えば代表的な芳香族アミンであるアニ
リンが常温で放置されると、二量体、三量体を形成する
のと同様な性質があり、更に窒素原子は様々な配位形態
をとることが可能であることから、無機充填材と有機部
材間の接着を強くサポートしていると推定される。The glycidylamine type epoxy compound represented by the general formula (3) used in the present invention is used for structural adhesives and has a particularly high adhesive strength among epoxy resins. The glycidylamine type epoxy compound represented by the general formula (3) is contained in the entire epoxy resin composition.
High adhesion to inorganic and organic members is exhibited only by adding 0.1 to 2.0% by weight. The cracks in the semiconductor device that occur during the soldering process are caused by peeling between the semiconductor sealing resin and the lead frame or peeling between the semiconductor sealing resin and the silicon chip, and the highly adhesive glycidylamine-type epoxy compound causes these peelings. The reduction significantly improves the solder cracking resistance of the semiconductor sealing resin. The glycidylamine type epoxy compound represented by the general formula (3) is in a liquid state and may be used in the same manner as in the case where a coupling agent is added. If the compounding amount is less than 0.1% by weight, it is not possible to obtain sufficient adhesive strength with inorganic and organic members,
If the content exceeds 2.0% by weight, the flame retardancy of the cured product of the resin composition is undesirably reduced. Glycidylamine type epoxy compounds have high reactivity which is a property unique to aromatic amines.For example, when aniline which is a typical aromatic amine is left at room temperature, dimers and trimers are formed. It has properties similar to those formed, and furthermore, nitrogen atoms can take various coordination forms, so it is presumed that they strongly support the adhesion between the inorganic filler and the organic member.
【００１６】一般式（３）中のＲは、水素原子又は炭素
数１〜３のアルキル基である。Ｒとしては、水素原子、
メチル基が好ましい。一般式（１）で示されるエポキシ
樹脂、一般式（２）で示されるフェノール樹脂及び一般
式（３）で示されるグリシジルアミン型エポキシ化合物
を組合せて用いた場合、半導体装置の低吸湿性、吸湿後
の半田処理での耐半田クラック性、難燃性等の点で最も
高い効果が得られる。R in the general formula (3) is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. R represents a hydrogen atom,
A methyl group is preferred. When an epoxy resin represented by the general formula (1), a phenol resin represented by the general formula (2) and a glycidylamine type epoxy compound represented by the general formula (3) are used in combination, the semiconductor device has low moisture absorption and moisture absorption. The highest effects can be obtained in terms of solder crack resistance, flame retardancy, and the like in the subsequent solder processing.
【００１７】本発明のエポキシ樹脂組成物は、（Ａ）〜
（Ｅ）成分の他、必要によってハロゲン系難燃剤、アン
チモン化合物、カップリング剤、カーボンブラック、ベ
ンガラ等の着色剤、天然ワックス、合成ワックス等の離
型剤及びシリコーンオイル、ゴム等の低応力添加剤等の
種々の添加剤等を適宜配合されても差し支えない。特に
無機充填材と有機物の両者に反応性を有しているカップ
リング剤は、半導体素子を搭載する基板と樹脂組成物の
硬化物との接着界面に作用し、接着力を向上させ、耐半
田クラック性等の信頼性を向上させるので好ましい。The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), if necessary, halogen-based flame retardants, antimony compounds, coupling agents, coloring agents such as carbon black and red iron oxide, release agents such as natural wax and synthetic wax, and low-stress addition of silicone oil and rubber Various additives such as agents may be appropriately compounded. In particular, a coupling agent having a reactivity with both the inorganic filler and the organic substance acts on the bonding interface between the substrate on which the semiconductor element is mounted and the cured product of the resin composition, improves the bonding strength, and improves the solder resistance. It is preferable because reliability such as cracking property is improved.
【００１８】本発明のエポキシ樹脂組成物を成形材料と
して製造するには、（Ａ）〜（Ｅ）成分、及びその他の
添加剤等をミキサー等を用いて充分に均一に常温混合し
た後、更に熱ロール又はニーダー等で溶融混練し、冷却
後粉砕して封止材料とすることができる。これらの成形
材料は、電気部品或いは電子部品であるトランジスタ、
集積回路等の被覆、絶縁、封止等に適用することができ
る。本発明のエポキシ樹脂組成物を用いて、半導体素子
等の電子部品を封止し、半導体装置を製造するには、ト
ランスファーモールド、コンプレッションモールド、イ
ンジェクションモールド等の成形方法で成形硬化すれば
よい。In order to produce the epoxy resin composition of the present invention as a molding material, the components (A) to (E) and other additives are thoroughly and uniformly mixed at room temperature using a mixer or the like, and then further mixed. It can be melted and kneaded with a hot roll or a kneader, cooled, and crushed to obtain a sealing material. These molding materials are transistors for electrical or electronic components,
The present invention can be applied to covering, insulating, sealing, and the like of an integrated circuit and the like. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, the molding may be performed by a molding method such as a transfer mold, a compression mold, and an injection mold.
【００１９】以下に、本発明を実施例を挙げて詳細に説
明するが、本発明はこれら実施例によりなんら限定され
るものでない。また各成分の配合割合は重量％とする。Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples. The mixing ratio of each component is defined as weight%.
【実施例】 式（１０）で示されるエポキシ樹脂Ａ（軟化点６０℃、エポキシ当量２７０） ６．９２重量％EXAMPLES Epoxy resin A represented by the formula (10) (softening point: 60 ° C., epoxy equivalent: 270) 6.92% by weight
【化９】 Embedded image
【００２０】 式（１１）で示されるフェノール樹脂Ｃ（軟化点７５℃、水酸基当量１９５） ５．３８重量％5.38% by weight of a phenolic resin C represented by the formula (11) (softening point: 75 ° C., hydroxyl equivalent: 195)
【化１０】 Embedded image
【００２１】 式（１２）で示されるグリシジルアミン型エポキシ化合物Ｅ（粘度１５００ｍ Ｐａｓ/２５℃、エポキシ当量１００） ０．２０重量％Glycidylamine type epoxy compound E represented by the formula (12) (viscosity: 1500 mPas / 25 ° C., epoxy equivalent: 100) 0.20% by weight
【化１１】 Embedded image
【００２２】 球状溶融シリカ粉末（平均粒径２２μｍ） ８６．００重量％ １，８−ジアザビシクロ（５，４，０）ウンデセン−７（以下、ＤＢＵという ） ０．２０重量％ カーボンブラック ０．３０重量％ カルナバワックス ０．３０重量％ その他の添加剤 ０．７０重量％ （カーボンブラック０．３０重量％、カルナバワックス
０．３０重量％、その他の添加剤０．７０重量％は表１
では省略した）をミキサーを用いて常温で混合し、７０
〜１１０℃でロールを用いて混練し、冷却後粉砕し、タ
ブレット化して樹脂組成物を得た。この樹脂組成物を以
下の方法で評価した。結果を表１に示す。Spherical fused silica powder (average particle size: 22 μm) 86.00% by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 0.20% by weight Carbon black 0.30% by weight % Carnauba wax 0.30% by weight Other additives 0.70% by weight (0.30% by weight of carbon black, 0.30% by weight of carnauba wax and 0.70% by weight of other additives are shown in Table 1)
Are omitted at room temperature using a mixer.
The mixture was kneaded at ~ 110 ° C using a roll, cooled, pulverized, and tabletted to obtain a resin composition. This resin composition was evaluated by the following method. Table 1 shows the results.
【００２３】評価方法 ・スパイラルフロー：ＥＭＭＩ−１−６６に準じたスパ
イラルフロー測定用の金型を用いて、金型温度１７５
℃、注入圧力６．９×１０6Ｐａ、硬化時間１２０秒で
測定した。単位はｃｍ。 ・熱時曲げ強度・曲げ弾性：得られた材料をタブレット
化し、低圧トランスファー成形機を用いて、金型温度１
７５℃、注入圧力６．９×１０6Ｐａ、硬化時間１２０
秒の条件で試験片を成形し、熱時曲げ強度、及び熱時曲
げ弾性率をＪＩＳ Ｋ ６９１１に準じて（２４０℃
で）測定した。単位はいずれもＮ／ｍｍ2。 ・耐湿信頼性：得られた材料をタブレット化し、低圧ト
ランスファー成形機を用いて、金型温度１７５℃、注入
圧力９．８××１０6Ｐａ、硬化時間１２０秒の条件で
１６ＳＯＰ（厚さ１．９５ｍｍ、チップサイズ３．５ｍ
ｍ×３．０ｍｍ、リードフレーム：４２アロイ）を成形
した。ポストキュアとして１７５℃で８時間処理した。
封止したテスト用素子のプレッシャークッカー試験（１
２５℃、圧力２．２×１０5Ｐａ）を行い、回路のオー
プン不良を測定し、不良発生時間で表した。単位は時
間。 ・高温保管性：得られた材料をタブレット化し、低圧ト
ランスファー成形機を用いて金型温度１７５℃、注入圧
力６．９×１０6Ｐａ、硬化時間１２０秒の条件で１６
ｐＤＩＰ（チップサイズ３ｍｍ×３．５ｍｍ）成形し
た。ポストキュアとして１７５℃で８時間処理後、高温
保管試験（１５０℃、１０００時間及び１８５℃、１０
００時間）を行い、配線間の電気抵抗値が初期値に対し
２０％増加したパッケージを不良と判定した。１０配線
間中の不良率を百分率で示した。単位は％。 ・吸湿率：得られた材料をタブレット化し、低圧トラン
スファー成形機にて金型温度１７５℃、注入圧力９．８
×１０6Ｐａ、硬化時間１２０秒の条件で直径５０ｍ
ｍ、厚さ３ｍｍの円盤状試験片を成形し、ポストキュア
として１７５℃で８時間処理した。試験片の吸湿処理前
と８５℃、相対湿度８５％の環境下で１６８時間処理し
た後の重量変化を測定し、試験片の吸湿率を百分率で示
した。単位は％。 ・耐半田クラック性：得られた材料をタブレット化し、
低圧トランスファー成形機にて金型温度１７５℃、注入
圧力９．８×１０6Ｐａ、硬化時間１２０秒の条件で４
４ｐＴＳＯＰ（厚さ１．０ｍｍ、チップサイズ４ｍｍ×
７．５ｍｍ）を成形した。ポストキュアとして１７５℃
で８時間処理したパッケージ６個を、８５℃、相対湿度
８５％の環境下で１６８時間処理した後、ＩＲリフロー
処理（２６０℃）を行った。処理後の内部の剥離及びク
ラックの有無を超音波探傷装置で観察し、不良パッケー
ジの個数を数えた。不良パッケージの個数がｎ個である
とき、ｎ／６と表示する。 ・難燃性：得られた材料をタブレット化し、低圧トラン
スファー成形機を用いて、１７５℃、注入圧力６．９×
１０６Ｐａ、硬化時間１２０秒の条件で試験片を成形
し、ＵＬ−９４垂直試験（試験片厚さ１／８ｉｎｃｈ）
を行った。Evaluation method Spiral flow: Using a mold for measuring spiral flow according to EMMI-1-66, mold temperature 175
C., an injection pressure of 6.9 × 10 6 Pa, and a curing time of 120 seconds. The unit is cm.・ Heat bending strength ・ Bending elasticity: The obtained material is tableted, and the mold temperature is set to 1 using a low pressure transfer molding machine.
75 ° C., injection pressure 6.9 × 10 6 Pa, curing time 120
The test piece was molded under the condition of seconds, and the bending strength under heating and the bending elastic modulus under heating were determined at 240 ° C. in accordance with JIS K 6911.
At). The unit is N / mm 2 . Moisture resistance reliability: The obtained material was tableted, and a low pressure transfer molding machine was used to mold the material to a temperature of 175 ° C., an injection pressure of 9.8 × 10 6 Pa, and a curing time of 120 seconds to obtain a 16 SOP (thickness 1). .95mm, chip size 3.5m
m × 3.0 mm, lead frame: 42 alloy). Post-curing was performed at 175 ° C. for 8 hours.
Pressure cooker test of sealed test elements (1
At 25 ° C. and a pressure of 2.2 × 10 5 Pa), the open failure of the circuit was measured and represented by the failure occurrence time. The unit is time. -High-temperature storage property: The obtained material is tableted, and is molded using a low-pressure transfer molding machine under the conditions of a mold temperature of 175 ° C, an injection pressure of 6.9 × 10 6 Pa, and a curing time of 120 seconds.
pDIP (chip size 3 mm x 3.5 mm) was formed. After post-curing at 175 ° C. for 8 hours, a high-temperature storage test (150 ° C., 1000 hours and 185 ° C., 10 hours)
00 hours), and the package in which the electric resistance between the wirings increased by 20% from the initial value was determined to be defective. The percentage of defects among the 10 wirings is shown as a percentage. Units%. -Moisture absorption: The obtained material is tableted, and the mold temperature is 175 ° C and the injection pressure is 9.8 with a low pressure transfer molding machine.
50 m in diameter under conditions of × 10 6 Pa and curing time of 120 seconds
A disk-shaped test piece having a thickness of 3 mm and a thickness of 3 mm was molded and treated at 175 ° C. for 8 hours as a post cure. The weight change of the test piece before and after the treatment for 168 hours in an environment of 85 ° C. and a relative humidity of 85% was measured, and the moisture absorption rate of the test piece was shown as a percentage. Units%.・ Solder cracking resistance: tablet the obtained material,
Using a low-pressure transfer molding machine, the mold temperature is 175 ° C., the injection pressure is 9.8 × 10 6 Pa, and the curing time is 120 seconds.
4pTSOP (Thickness 1.0mm, chip size 4mm ×
7.5 mm). 175 ° C as post cure
After treating the six packages for 8 hours in an environment of 85 ° C. and 85% relative humidity for 168 hours, an IR reflow process (260 ° C.) was performed. The presence or absence of internal peeling and cracking after the treatment was observed with an ultrasonic flaw detector, and the number of defective packages was counted. When the number of defective packages is n, n / 6 is displayed. -Flame retardancy: tablet the obtained material, and use a low-pressure transfer molding machine at 175 ° C and an injection pressure of 6.9x.
A test piece was molded under the conditions of 106 Pa and a curing time of 120 seconds, and a UL-94 vertical test (test piece thickness: 1/8 inch)
Was done.
【００２４】実施例２〜５、比較例１〜３ 実施例１以外で用いた材料を以下に示す。 ビフェニル型エポキシ樹脂Ｂ（軟化点１０５℃、エポキ
シ当量１９３） フェノールアラルキル樹脂Ｄ（軟化点７５℃、水酸基当
量１７５） 赤燐系難燃剤（赤燐の表面を水酸化アルミニウムで被覆
した後、更にその表面をフェノール樹脂で被覆したもの
で、赤燐含有量９４重量％、平均粒径４．５ｕｍ、最大
粒径１１ｕｍ） 表１に示した配合割合の成分（カーボンブラック０．３
０重量％、カルナバワックス０．３０重量％、その他の
添加剤０．７０重量％は表１では省略した）を実施例１
と同様に樹脂組成物を作製し、実施例１と同様にして評
価した。評価結果を表１に示す。Examples 2 to 5 and Comparative Examples 1 to 3 Materials used in other than Example 1 are shown below. Biphenyl-type epoxy resin B (softening point 105 ° C, epoxy equivalent 193) Phenol aralkyl resin D (softening point 75 ° C, hydroxyl equivalent 175) Red phosphorus-based flame retardant (The surface of red phosphorus is coated with aluminum hydroxide and then The surface is coated with a phenol resin. The content of red phosphorus is 94% by weight, the average particle size is 4.5 μm, and the maximum particle size is 11 μm.
0% by weight, 0.30% by weight of carnauba wax and 0.70% by weight of other additives are omitted in Table 1).
A resin composition was prepared in the same manner as in Example 1 and evaluated in the same manner as in Example 1. Table 1 shows the evaluation results.
【００２５】[0025]
【表１】 [Table 1]
【００２６】[0026]
【発明の効果】本発明のエポキシ樹脂組成物は、成形性
に優れ、これを用いて半導体素子を封止してなる半導体
装置は、耐半田クラック性、難燃剤を含まなくとも難燃
性に優れ、かつ耐湿信頼性及び高温保管性に優れてい
る。The epoxy resin composition of the present invention has excellent moldability, and a semiconductor device obtained by sealing a semiconductor element with the epoxy resin composition has solder crack resistance and flame retardancy even without containing a flame retardant. Excellent and excellent in moisture resistance reliability and high-temperature storage property.
フロントページの続き Ｆターム(参考） 4J002 CC043 CC053 CC073 CD041 CD051 CD061 CD071 CD132 CD141 CE003 DE147 DJ007 DJ017 EN026 EU116 EU136 EW146 EW176 EY016 FB097 FD017 FD143 FD156 GQ05 4J036 AA05 AB16 AC02 AD07 AD08 AD10 AE07 AF05 AF06 AF08 AH09 DC05 DC40 DC46 DD07 FA05 FB06 FB08 GA04 GA06 JA07 4M109 AA01 BA01 CA21 EA03 EB03 EB04 EB12 EB18 EC01 EC05 EC20 Continued on the front page F-term (reference) 4J002 CC043 CC053 CC073 CD041 CD051 CD061 CD071 CD132 CD141 CE003 DE147 DJ007 DJ017 EN026 EU116 EU136 EW146 EW176 EY016 FB097 FD017 FD143 FD156 GQ05 4J036 AA05 AB16 AC02 AD07 AD05 DC10 AF07 DC07 AF07 FA05 FB06 FB08 GA04 GA06 JA07 4M109 AA01 BA01 CA21 EA03 EB03 EB04 EB12 EB18 EC01 EC05 EC20
Claims (2)
樹脂、（Ｂ）一般式（２）で示されるフェノール樹脂、
（Ｃ）硬化促進剤、（Ｄ）、無機充填材及び（Ｅ）一般
式（３）で示されるグリシジルアミン型エポキシ化合物
を必須成分とするエポキシ樹脂組成物であって、（Ｅ）
一般式（３）で示されるグリシジルアミン型エポキシ化
合物が、全エポキシ樹脂組成物中０．１０〜２．０重量
％であることを特徴とする半導体封止用エポキシ樹脂組
成物。 【化１】 （式中のＲは、水素原子又は炭素数１〜４のアルキル基
から選択される基であり、互いに同一であっても、異な
っていても良い。ｎは平均値で、１〜５の正数） 【化２】 （式中のＲは、水素原子、又は炭素数１〜４のアルキル
基から選択される基であり、互いに同一であっても、異
なっていても良い。ｎは平均値で、１〜５の正数） 【化３】 （式中のＲは、水素原子、又は炭素数１〜３のアルキル
基から選択される基である。）(A) an epoxy resin represented by the general formula (1), (B) a phenol resin represented by the general formula (2),
An epoxy resin composition comprising (C) a curing accelerator, (D), an inorganic filler and (E) a glycidylamine type epoxy compound represented by the general formula (3) as essential components,
An epoxy resin composition for semiconductor encapsulation, wherein the glycidylamine type epoxy compound represented by the general formula (3) accounts for 0.10 to 2.0% by weight of the total epoxy resin composition. Embedded image (R in the formula is a group selected from a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and may be the same or different. N is an average value of 1 to 5 Number) (R in the formula is a group selected from a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and may be the same or different. N is an average of 1 to 5 (Positive number) (R in the formula is a group selected from a hydrogen atom or an alkyl group having 1 to 3 carbon atoms.)
いて半導体素子を封止してなることを特徴とする半導体
装置。2. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000373379A JP2002179882A (en) | 2000-12-07 | 2000-12-07 | Epoxy resin composition and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000373379A JP2002179882A (en) | 2000-12-07 | 2000-12-07 | Epoxy resin composition and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002179882A true JP2002179882A (en) | 2002-06-26 |
Family
ID=18842782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000373379A Pending JP2002179882A (en) | 2000-12-07 | 2000-12-07 | Epoxy resin composition and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002179882A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002317102A (en) * | 2001-04-20 | 2002-10-31 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP4692885B2 (en) * | 2003-02-18 | 2011-06-01 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| WO2022024727A1 (en) * | 2020-07-31 | 2022-02-03 | パナソニックＩｐマネジメント株式会社 | Epoxy resin composition and under-filling material |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0710966A (en) * | 1993-06-24 | 1995-01-13 | Hitachi Ltd | Epoxy resin composition and method for producing cured epoxy resin |
| JPH11140166A (en) * | 1997-11-11 | 1999-05-25 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
| JP2000034393A (en) * | 1998-05-15 | 2000-02-02 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
| JP2000212393A (en) * | 1999-01-28 | 2000-08-02 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor apparatus |
| JP2000281750A (en) * | 1999-03-31 | 2000-10-10 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2000281870A (en) * | 1999-03-30 | 2000-10-10 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2001329146A (en) * | 2000-03-13 | 2001-11-27 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
-
2000
- 2000-12-07 JP JP2000373379A patent/JP2002179882A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0710966A (en) * | 1993-06-24 | 1995-01-13 | Hitachi Ltd | Epoxy resin composition and method for producing cured epoxy resin |
| JPH11140166A (en) * | 1997-11-11 | 1999-05-25 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
| JP2000034393A (en) * | 1998-05-15 | 2000-02-02 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
| JP2000212393A (en) * | 1999-01-28 | 2000-08-02 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor apparatus |
| JP2000281870A (en) * | 1999-03-30 | 2000-10-10 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2000281750A (en) * | 1999-03-31 | 2000-10-10 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2001329146A (en) * | 2000-03-13 | 2001-11-27 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor encapsulation and semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002317102A (en) * | 2001-04-20 | 2002-10-31 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP4692885B2 (en) * | 2003-02-18 | 2011-06-01 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| WO2022024727A1 (en) * | 2020-07-31 | 2022-02-03 | パナソニックＩｐマネジメント株式会社 | Epoxy resin composition and under-filling material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4692885B2 (en) | Epoxy resin composition and semiconductor device | |
| JP4306329B2 (en) | Epoxy resin composition and semiconductor device | |
| JP2004002574A (en) | Epoxy resin composition and semiconductor device | |
| JP4250987B2 (en) | Epoxy resin composition and semiconductor device | |
| JP2000273280A (en) | Epoxy resin composition and semiconductor device | |
| JP2002179882A (en) | Epoxy resin composition and semiconductor device | |
| JP5098125B2 (en) | Epoxy resin composition and semiconductor device | |
| JP2002179773A (en) | Epoxy resin composition and semiconductor device | |
| JP2963260B2 (en) | Epoxy resin composition | |
| JP2003064157A (en) | Epoxy resin composition and semiconductor device | |
| JP2006104393A (en) | Epoxy resin composition and semiconductor device | |
| JP2004140186A (en) | Method of manufacturing semiconductor device | |
| JP2002317102A (en) | Epoxy resin composition and semiconductor device | |
| JP5142427B2 (en) | Epoxy resin composition and semiconductor device | |
| JP2002293886A (en) | Epoxy resin composition and semiconductor device | |
| JPH11100491A (en) | Epoxy resin composition and semiconductor device | |
| JP2004155841A (en) | Sealing resin composition, and semiconductor sealing device | |
| JP4635360B2 (en) | Semiconductor device | |
| JP3093051B2 (en) | Epoxy resin composition | |
| JP5673613B2 (en) | Epoxy resin composition and semiconductor device | |
| JP2000273285A (en) | Epoxy resin composition and semiconductor device | |
| JP2006124418A (en) | Semiconductor device | |
| JP4379977B2 (en) | Epoxy resin composition and semiconductor device | |
| JP2004002495A (en) | Epoxy resin composition and semiconductor device | |
| JPH07126490A (en) | Epoxy resin composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070711 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100426 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100511 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110517 |