JP2002169283A - Photosensitive polymer composition, method for manufacturing pattern, and electronic parts - Google Patents
Photosensitive polymer composition, method for manufacturing pattern, and electronic partsInfo
- Publication number
- JP2002169283A JP2002169283A JP2000364142A JP2000364142A JP2002169283A JP 2002169283 A JP2002169283 A JP 2002169283A JP 2000364142 A JP2000364142 A JP 2000364142A JP 2000364142 A JP2000364142 A JP 2000364142A JP 2002169283 A JP2002169283 A JP 2002169283A
- Authority
- JP
- Japan
- Prior art keywords
- component
- polymer composition
- photosensitive polymer
- group
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 61
- 229920000642 polymer Polymers 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 29
- 125000000962 organic group Chemical group 0.000 claims abstract description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 12
- 239000004952 Polyamide Substances 0.000 claims abstract description 11
- 229920002647 polyamide Polymers 0.000 claims abstract description 11
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 6
- 239000003513 alkali Substances 0.000 claims abstract description 6
- 125000005042 acyloxymethyl group Chemical group 0.000 claims abstract description 4
- -1 bis (2-hydroxy-3-acetoxymethyl-5-methylphenyl) methane Chemical compound 0.000 claims description 44
- 239000011229 interlayer Substances 0.000 claims description 15
- 125000004432 carbon atom Chemical group C* 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 7
- 238000004090 dissolution Methods 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 150000001450 anions Chemical class 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 3
- 239000000243 solution Substances 0.000 abstract description 28
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 239000007864 aqueous solution Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 12
- 125000003118 aryl group Chemical group 0.000 description 11
- 229920002577 polybenzoxazole Polymers 0.000 description 11
- 229920001721 polyimide Polymers 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 150000004985 diamines Chemical class 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 230000018109 developmental process Effects 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 230000002140 halogenating effect Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- WFCQTAXSWSWIHS-UHFFFAOYSA-N 4-[bis(4-hydroxyphenyl)methyl]phenol Chemical compound C1=CC(O)=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 WFCQTAXSWSWIHS-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 125000005520 diaryliodonium group Chemical group 0.000 description 5
- 150000001990 dicarboxylic acid derivatives Chemical class 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 239000012670 alkaline solution Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003779 heat-resistant material Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 3
- WVDRSXGPQWNUBN-UHFFFAOYSA-N 4-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C=C1 WVDRSXGPQWNUBN-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- CQZCVYWWRJDZBO-UHFFFAOYSA-N diphenyliodanium;nitrate Chemical compound [O-][N+]([O-])=O.C=1C=CC=CC=1[I+]C1=CC=CC=C1 CQZCVYWWRJDZBO-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002440 hydroxy compounds Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 2
- DVVGIUUJYPYENY-UHFFFAOYSA-N 1-methylpyridin-2-one Chemical compound CN1C=CC=CC1=O DVVGIUUJYPYENY-UHFFFAOYSA-N 0.000 description 2
- KZLDGFZCFRXUIB-UHFFFAOYSA-N 2-amino-4-(3-amino-4-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC(C=2C=C(N)C(O)=CC=2)=C1 KZLDGFZCFRXUIB-UHFFFAOYSA-N 0.000 description 2
- KECOIASOKMSRFT-UHFFFAOYSA-N 2-amino-4-(3-amino-4-hydroxyphenyl)sulfonylphenol Chemical compound C1=C(O)C(N)=CC(S(=O)(=O)C=2C=C(N)C(O)=CC=2)=C1 KECOIASOKMSRFT-UHFFFAOYSA-N 0.000 description 2
- UHIDYCYNRPVZCK-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)propan-2-yl]phenol Chemical compound C=1C=C(O)C(N)=CC=1C(C)(C)C1=CC=C(O)C(N)=C1 UHIDYCYNRPVZCK-UHFFFAOYSA-N 0.000 description 2
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 2
- KHAFBBNQUOEYHB-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)sulfonylphenol Chemical compound C1=C(O)C(N)=CC=C1S(=O)(=O)C1=CC=C(N)C(O)=C1 KHAFBBNQUOEYHB-UHFFFAOYSA-N 0.000 description 2
- ZDRNVPNSQJRIRN-UHFFFAOYSA-N 2-amino-5-[2-(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C(O)=C1 ZDRNVPNSQJRIRN-UHFFFAOYSA-N 0.000 description 2
- JDFAWEKPFLGRAK-UHFFFAOYSA-N 2-amino-5-[2-(4-amino-3-hydroxyphenyl)propan-2-yl]phenol Chemical compound C=1C=C(N)C(O)=CC=1C(C)(C)C1=CC=C(N)C(O)=C1 JDFAWEKPFLGRAK-UHFFFAOYSA-N 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- CWLKGDAVCFYWJK-UHFFFAOYSA-N 3-aminophenol Chemical compound NC1=CC=CC(O)=C1 CWLKGDAVCFYWJK-UHFFFAOYSA-N 0.000 description 2
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 2
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 125000001118 alkylidene group Chemical group 0.000 description 2
- 150000001408 amides Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 125000001174 sulfone group Chemical group 0.000 description 2
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 2
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 2
- 125000005409 triarylsulfonium group Chemical group 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XEDWWPGWIXPVRQ-UHFFFAOYSA-N (2,3,4-trihydroxyphenyl)-(3,4,5-trihydroxyphenyl)methanone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC(O)=C(O)C(O)=C1 XEDWWPGWIXPVRQ-UHFFFAOYSA-N 0.000 description 1
- SLKJWNJPOGWYLH-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound OC1=CC=CC(C(=O)C=2C(=C(O)C(O)=CC=2)O)=C1O SLKJWNJPOGWYLH-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- ADCBKYIHQQCFHE-UHFFFAOYSA-N 1,3-dimethyl-1,3-diphenylurea Chemical compound C=1C=CC=CC=1N(C)C(=O)N(C)C1=CC=CC=C1 ADCBKYIHQQCFHE-UHFFFAOYSA-N 0.000 description 1
- GWEHVDNNLFDJLR-UHFFFAOYSA-N 1,3-diphenylurea Chemical compound C=1C=CC=CC=1NC(=O)NC1=CC=CC=C1 GWEHVDNNLFDJLR-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 description 1
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- LOICBODWTPYJIW-UHFFFAOYSA-N 2-bromobenzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1Br LOICBODWTPYJIW-UHFFFAOYSA-N 0.000 description 1
- QMAQHCMFKOQWML-UHFFFAOYSA-N 3-[2-[2-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C(=CC=CC=2)S(=O)(=O)C=2C(=CC=CC=2)OC=2C=C(N)C=CC=2)=C1 QMAQHCMFKOQWML-UHFFFAOYSA-N 0.000 description 1
- 229940018563 3-aminophenol Drugs 0.000 description 1
- HRMCXDSWURAYFR-UHFFFAOYSA-N 3-phenoxyphthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C=CC=CC=2)=C1C(O)=O HRMCXDSWURAYFR-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- NEQFBGHQPUXOFH-UHFFFAOYSA-N 4-(4-carboxyphenyl)benzoic acid Chemical group C1=CC(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C=C1 NEQFBGHQPUXOFH-UHFFFAOYSA-N 0.000 description 1
- SQJQLYOMPSJVQS-UHFFFAOYSA-N 4-(4-carboxyphenyl)sulfonylbenzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C=C1 SQJQLYOMPSJVQS-UHFFFAOYSA-N 0.000 description 1
- NBLFJUWXERDUEN-UHFFFAOYSA-N 4-[(2,3,4-trihydroxyphenyl)methyl]benzene-1,2,3-triol Chemical compound OC1=C(O)C(O)=CC=C1CC1=CC=C(O)C(O)=C1O NBLFJUWXERDUEN-UHFFFAOYSA-N 0.000 description 1
- BRPSWMCDEYMRPE-UHFFFAOYSA-N 4-[1,1-bis(4-hydroxyphenyl)ethyl]phenol Chemical compound C=1C=C(O)C=CC=1C(C=1C=CC(O)=CC=1)(C)C1=CC=C(O)C=C1 BRPSWMCDEYMRPE-UHFFFAOYSA-N 0.000 description 1
- NYIWTDSCYULDTJ-UHFFFAOYSA-N 4-[2-(2,3,4-trihydroxyphenyl)propan-2-yl]benzene-1,2,3-triol Chemical compound C=1C=C(O)C(O)=C(O)C=1C(C)(C)C1=CC=C(O)C(O)=C1O NYIWTDSCYULDTJ-UHFFFAOYSA-N 0.000 description 1
- PHQYMDAUTAXXFZ-UHFFFAOYSA-N 4-[2-(4-carboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C=C1 PHQYMDAUTAXXFZ-UHFFFAOYSA-N 0.000 description 1
- XKACUVXWRVMXOE-UHFFFAOYSA-N 4-[2-(4-carboxyphenyl)propan-2-yl]benzoic acid Chemical compound C=1C=C(C(O)=O)C=CC=1C(C)(C)C1=CC=C(C(O)=O)C=C1 XKACUVXWRVMXOE-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- LDFYRFKAYFZVNH-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenoxy]phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 LDFYRFKAYFZVNH-UHFFFAOYSA-N 0.000 description 1
- HYDATEKARGDBKU-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]phenoxy]aniline Chemical group C1=CC(N)=CC=C1OC1=CC=C(C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 HYDATEKARGDBKU-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- JPXMEXHMWFGLEO-UHFFFAOYSA-N 5,10-dimethyl-4b,5,9b,10-tetrahydroindeno[2,1-a]indene-1,3,6,8-tetrol Chemical compound OC1=CC(O)=C2C(C)C3C(C=C(O)C=C4O)=C4C(C)C3C2=C1 JPXMEXHMWFGLEO-UHFFFAOYSA-N 0.000 description 1
- PLPFTLXIQQYOMW-UHFFFAOYSA-N 5-chlorobenzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC(Cl)=CC(C(O)=O)=C1 PLPFTLXIQQYOMW-UHFFFAOYSA-N 0.000 description 1
- AUIOTTUHAZONIC-UHFFFAOYSA-N 5-fluorobenzene-1,3-dicarboxylic acid Chemical compound OC(=O)C1=CC(F)=CC(C(O)=O)=C1 AUIOTTUHAZONIC-UHFFFAOYSA-N 0.000 description 1
- BJLUCDZIWWSFIB-UHFFFAOYSA-N 5-tert-butylbenzene-1,3-dicarboxylic acid Chemical compound CC(C)(C)C1=CC(C(O)=O)=CC(C(O)=O)=C1 BJLUCDZIWWSFIB-UHFFFAOYSA-N 0.000 description 1
- FMBDYGMTLLLLKY-UHFFFAOYSA-M 8-anilinonaphthalene-1-sulfonate;diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1.C=12C(S(=O)(=O)[O-])=CC=CC2=CC=CC=1NC1=CC=CC=C1 FMBDYGMTLLLLKY-UHFFFAOYSA-M 0.000 description 1
- DEVXQDKRGJCZMV-UHFFFAOYSA-K Aluminum acetoacetate Chemical compound [Al+3].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O.CC(=O)CC([O-])=O DEVXQDKRGJCZMV-UHFFFAOYSA-K 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 1
- 101100074998 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) nmp-2 gene Proteins 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000000732 arylene group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- VGZKCAUAQHHGDK-UHFFFAOYSA-M bis(4-tert-butylphenyl)iodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(C(C)(C)C)=CC=C1[I+]C1=CC=C(C(C)(C)C)C=C1 VGZKCAUAQHHGDK-UHFFFAOYSA-M 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- SUSAGCZZQKACKE-UHFFFAOYSA-N cyclobutane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC1C(O)=O SUSAGCZZQKACKE-UHFFFAOYSA-N 0.000 description 1
- LNGJOYPCXLOTKL-UHFFFAOYSA-N cyclopentane-1,3-dicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)C1 LNGJOYPCXLOTKL-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 150000001987 diarylethers Chemical class 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 150000001989 diazonium salts Chemical class 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N dimethylmethane Natural products CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 1
- LGPSGXJFQQZYMS-UHFFFAOYSA-M diphenyliodanium;bromide Chemical compound [Br-].C=1C=CC=CC=1[I+]C1=CC=CC=C1 LGPSGXJFQQZYMS-UHFFFAOYSA-M 0.000 description 1
- RSJLWBUYLGJOBD-UHFFFAOYSA-M diphenyliodanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[I+]C1=CC=CC=C1 RSJLWBUYLGJOBD-UHFFFAOYSA-M 0.000 description 1
- WQIRVUAXANLUPO-UHFFFAOYSA-M diphenyliodanium;iodide Chemical compound [I-].C=1C=CC=CC=1[I+]C1=CC=CC=C1 WQIRVUAXANLUPO-UHFFFAOYSA-M 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000000219 ethylidene group Chemical group [H]C(=[*])C([H])([H])[H] 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005227 gel permeation chromatography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- AJXKZZFJTJTFMP-UHFFFAOYSA-N iodanium;nitrate Chemical compound [IH2+].[O-][N+]([O-])=O AJXKZZFJTJTFMP-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 1
- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N p-toluenesulfonic acid Substances CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- UHZYTMXLRWXGPK-UHFFFAOYSA-N phosphorus pentachloride Chemical compound ClP(Cl)(Cl)(Cl)Cl UHZYTMXLRWXGPK-UHFFFAOYSA-N 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 description 1
- RXMRGBVLCSYIBO-UHFFFAOYSA-M tetramethylazanium;iodide Chemical compound [I-].C[N+](C)(C)C RXMRGBVLCSYIBO-UHFFFAOYSA-M 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、感光性重合体組成
物、この組成物を用いたパターンの製造法及び電子部品
に関し、さらに詳しくは、加熱処理により半導体素子等
の電子部品の表面保護膜、層間絶縁膜等として適用可能
なポリベンゾオキサゾール系耐熱性高分子となるポジ型
で耐熱性の感光性重合体組成物、この組成物を用いたパ
ターンの製造方法及び電子部品に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensitive polymer composition, a method for producing a pattern using the composition, and an electronic component. More specifically, the present invention relates to a surface protection film for an electronic component such as a semiconductor device by heat treatment. The present invention relates to a positive-type and heat-resistant photosensitive polymer composition which is a polybenzoxazole-based heat-resistant polymer applicable as an interlayer insulating film and the like, a method for producing a pattern using the composition, and an electronic component.
【0002】[0002]
【従来の技術】従来、半導体素子の表面保護膜又は層間
絶縁膜としては、耐熱性、機械特性及び電気特性に優
れ、また、膜形成が容易であり、表面を平坦化できる等
の利点から、ポリイミドが幅広く使用されている。ポリ
イミドを表面保護膜又は層間絶縁膜として使用する場
合、スルーホール等の形成工程は、主にポジ型のフォト
レジストを用いるエッチングプロセスによって行われて
いる。しかし、工程にはフォトレジストの塗布や剥離が
含まれ、煩雑であるという問題がある。そこで作業工程
の合理化を目的に感光性を兼ね備えた耐熱性材料の検討
がなされてきた。2. Description of the Related Art Conventionally, as a surface protective film or an interlayer insulating film of a semiconductor element, there are advantages such as excellent heat resistance, mechanical properties and electric properties, easy film formation, and a flat surface. Polyimide is widely used. When polyimide is used as a surface protective film or an interlayer insulating film, a process of forming a through hole or the like is mainly performed by an etching process using a positive photoresist. However, there is a problem that the process involves coating and peeling of a photoresist, which is complicated. Accordingly, heat-resistant materials having both photosensitivity have been studied for the purpose of streamlining work steps.
【0003】感光性ポリイミド組成物に関しては、1.
エステル結合により感光基を導入したポリイミド前駆体
組成物(特公昭52−30207号公報等)、2.ポリ
アミド酸に化学線の照射により2量化又は重合可能な炭
素−炭素二重結合及びアミノ基と芳香族ビスアジドを含
む化合物を添加した組成物(特公平3−36861号公
報等)などが知られ、用いられている。With respect to the photosensitive polyimide composition,
1. A polyimide precursor composition having a photosensitive group introduced through an ester bond (Japanese Patent Publication No. 52-30207, etc.); A composition (for example, Japanese Patent Publication No. 3-36861) in which a compound containing a carbon-carbon double bond and an amino group and an aromatic bisazide which can be dimerized or polymerized by irradiation with actinic radiation to a polyamic acid is added. Used.
【0004】感光性ポリイミド組成物の使用に際して
は、通常、溶液状態で基板上に塗布後乾燥し、マスクを
介して活性光線を照射し、露光部を現像液で除去し、パ
ターンを形成する。上記1及び2の組成物は、現像液に
有機溶剤を使用するネガ型である。有機溶剤の現像液
は、廃液処理の際の環境への負荷が大きく、近年環境へ
の配慮から、廃現像液の処理の容易な水性現像液で現像
可能な感光性耐熱材料が求められている。また、ポジ型
のフォトレジストを用いるエッチングプロセスからネガ
型の感光性ポリイミドに切り替えるためには、露光装置
のマスクや現像設備の変更が必要となる。上記1、2の
組成物は以上述べたような問題点がある。In using the photosensitive polyimide composition, usually, it is applied on a substrate in a solution state, dried, irradiated with an actinic ray through a mask, and the exposed portion is removed with a developing solution to form a pattern. The above compositions 1 and 2 are negative working compositions using an organic solvent for the developer. An organic solvent developer has a large burden on the environment at the time of waste liquid treatment, and in recent years, in consideration of the environment, a photosensitive heat-resistant material that can be developed with an aqueous developer that can easily treat the waste developer has been required. . In addition, in order to switch from an etching process using a positive photoresist to a negative photosensitive polyimide, it is necessary to change a mask and developing equipment of an exposure apparatus. The compositions 1 and 2 have the problems described above.
【0005】一方、ポジ型感光性ポリイミドとしては、
3.o−ニトロベンジル基をエステル結合により導入し
たポリイミド前駆体(特開昭60−37550号公
報)、4.フェノール性水酸基を含むポリアミド酸エス
テルとo−ジアゾキノン化合物を含む組成物(特開平4
−204945号公報)等が知られている。また、ポジ
型の耐熱性材料として、ポリイミドと同等の、耐熱性、
機械特性、電気特性を有するポリベンズオキサゾールを
使用した感光剤材料、5.ポリベンズオキサゾール前駆
体とo−ジアゾキノン化合物を含む組成物(特開昭64
−6947号公報、特開平9−302221号公報等)
も知られている。On the other hand, as a positive photosensitive polyimide,
3. 3. A polyimide precursor having an o-nitrobenzyl group introduced through an ester bond (JP-A-60-37550); Composition containing a polyamic acid ester containing a phenolic hydroxyl group and an o-diazoquinone compound
-204945) and the like. In addition, as a positive heat-resistant material, heat resistance equivalent to polyimide,
4. Photosensitive material using polybenzoxazole having mechanical and electrical properties; Composition containing a polybenzoxazole precursor and an o-diazoquinone compound
-6947, JP-A-9-302221, etc.)
Is also known.
【0006】しかし、上記3は感光する波長が主に30
0nm以下であるため、感度が低く、特に最近使用され
ているi線ステッパ(365nmの単波長光)等では使
用が困難であるという問題がある。上記4、5の組成物
は、上記3の前駆体より感度はよいが、十分ではないと
いう問題がある。このように、十分な感度を有するポジ
型感光性耐熱材料は得られていないのが現状である。[0006] However, in the case of 3 above, the photosensitive wavelength is mainly 30
Since it is 0 nm or less, the sensitivity is low, and there is a problem that it is difficult to use it particularly with an i-line stepper (single-wavelength light of 365 nm) used recently. The compositions (4) and (5) are more sensitive than the precursor (3), but have a problem that they are not sufficient. As described above, a positive photosensitive heat-resistant material having sufficient sensitivity has not been obtained at present.
【0007】[0007]
【発明が解決しようとする課題】本発明は前記した、従
来技術の問題点を克服するものである。すなわち本発明
は、感度が高く、パターンの形状や未露光部の残膜率も
良好なポジ型の感光性重合体組成物を提供するものであ
る。また本発明は、前記の組成物の使用により、解像度
が高く、良好な形状のパターンが得られるパターンの製
造法を提供するものである。さらに本発明は、良好な形
状の精密なパターンを有することにより、信頼性の高い
電子部品を提供するものである。SUMMARY OF THE INVENTION The present invention overcomes the above-mentioned problems of the prior art. That is, the present invention provides a positive photosensitive polymer composition having a high sensitivity, a good pattern shape and a good residual film ratio in an unexposed portion. The present invention also provides a method for producing a pattern having a high resolution and a good-shaped pattern by using the above composition. Further, the present invention provides a highly reliable electronic component having a precise pattern having a good shape.
【0008】[0008]
【課題を解決するための手段】本発明は、(a)一般式
(I)According to the present invention, there are provided (a) a compound represented by the following general formula (I):
【化5】 (式中、Uは4価の有機基を示し、Vは2価の有機基を
示す)で表される繰り返し単位を有するアルカリ水溶液
可溶性のポリアミド、(b)光により酸を発生する化合
物、並びに、(c)分子中に2個以上のアシルオキシメ
チル基とフェノール性水酸基とを有する化合物を含有し
てなる感光性重合体組成物に関する。Embedded image (Wherein, U represents a tetravalent organic group, and V represents a divalent organic group), an aqueous alkali-soluble polyamide having a repeating unit represented by the formula: (b) a compound capable of generating an acid by light, and And (c) a photosensitive polymer composition comprising a compound having two or more acyloxymethyl groups and a phenolic hydroxyl group in a molecule.
【0009】また本発明は、前記(c)成分が、一般式
(II)In the present invention, the component (c) may be a compound represented by the general formula (II):
【化6】 (式中、Xは単結合又は2価の有機基を示し、Rはアル
キル基又はアルケニル基を示し、R1及びR2は各々独立
にアルキル基又はアルケニル基を示し、m及びnは各々
独立に1又は2であり、p及びqは各々独立に0〜3の
整数である)で表される化合物である感光性重合体組成
物に関する。Embedded image (Wherein, X represents a single bond or a divalent organic group, R represents an alkyl group or an alkenyl group, R 1 and R 2 each independently represent an alkyl group or an alkenyl group, and m and n each represent an independent group. And p and q are each independently an integer of 0 to 3).
【0010】また本発明は、前記のXで表される基が、In the present invention, the group represented by X is
【化7】 (式中、2つのAは各々独立に水素原子又は炭素原子数
1〜10のアルキル基を示す)である感光性重合体組成
物に関する。Embedded image Wherein two As each independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms.
【0011】また本発明は、前記の一般式(II)で表
される化合物が、ビス(2−ヒドロキシ−3−アセトキ
シメチル−5−メチルフェニル)メタンである感光性重
合体組成物に関する。また本発明は、(a)成分100
重量部に対して、(b)成分5〜100重量部、(c)
成分1〜30重量部を配合する前記の感光性重合体組成
物に関する。The present invention also relates to a photosensitive polymer composition wherein the compound represented by the general formula (II) is bis (2-hydroxy-3-acetoxymethyl-5-methylphenyl) methane. In addition, the present invention relates to (a) component 100
(B) 5 to 100 parts by weight of component (b), and (c)
The present invention relates to the above-mentioned photosensitive polymer composition containing 1 to 30 parts by weight of a component.
【0012】また本発明は、さらに(d)アルカリ水溶
液に対する(a)成分の溶解を阻害する化合物を含有す
る前記の何れかに記載の感光性重合体組成物に関する。
また本発明は、前記(d)成分が、一般式(III)The present invention also relates to the photosensitive polymer composition according to any one of the above, further comprising (d) a compound which inhibits the dissolution of the component (a) in an aqueous alkali solution.
In the present invention, the component (d) may be a compound represented by the general formula (III):
【化8】 (式中、X-は対陰イオンを示し、R3及びR4は各々独
立にアルキル基、アルケニル基を示し、a及びbは各々
独立に0〜5の整数である)で表されるジアリールヨー
ドニウム塩を含む感光性重合体組成物に関する。Embedded image (Wherein, X − represents a counter anion, R 3 and R 4 each independently represent an alkyl group or an alkenyl group, and a and b each independently represent an integer of 0 to 5). The present invention relates to a photosensitive polymer composition containing an iodonium salt.
【0013】また本発明は、(a)成分100重量部に
対して、(b)成分5〜100重量部、(c)成分1〜
30重量部、(d)成分0.01〜15重量部を配合す
る前記の感光性重合体組成物に関する。また本発明は、
前記の何れかに記載の感光性重合体組成物を支持基板上
に塗布し乾燥する工程、露光する工程、現像する工程及
び加熱処理する工程を含むパターンの製造法に関する。Further, the present invention relates to 100 parts by weight of component (a), 5 to 100 parts by weight of component (b), and 1 to 100 parts by weight of component (c).
The present invention relates to the above photosensitive polymer composition containing 30 parts by weight and 0.01 to 15 parts by weight of the component (d). The present invention also provides
The present invention relates to a method for producing a pattern, comprising a step of applying and drying the photosensitive polymer composition according to any one of the above on a support substrate, an exposing step, a developing step, and a heat treatment step.
【0014】また本発明は、前記の露光する工程におい
て使用する光源が、i線であるパターンの製造法に関す
る。また本発明は、前記の製造方法により得られるパタ
ーンを表面保護膜又は層間絶縁膜として有してなる電子
部品に関する。The present invention also relates to a method for producing a pattern in which the light source used in the exposing step is an i-line. The present invention also relates to an electronic component having a pattern obtained by the above manufacturing method as a surface protective film or an interlayer insulating film.
【0015】[0015]
【発明の実施の形態】本発明における前記一般式(I)
で表される繰り返し単位を有する成分(a)は、アルカ
リ水溶液可溶性のフェノール性水酸基含有ポリアミドで
ある。なお、アルカリ水溶液とは、テトラメチルアンモ
ニウムヒドロキシド水溶液、金属水酸化物水溶液、有機
アミン水溶液等のアルカリ性の溶液である。一般式
(I)で表される、ヒドロキシ基を含有するアミドユニ
ットは、最終的には硬化時の脱水閉環により、耐熱性、
機械特性、電気特性に優れるオキサゾール体に変換され
る。BEST MODE FOR CARRYING OUT THE INVENTION The above general formula (I) in the present invention
Component (a) having a repeating unit represented by the formula (1) is a phenolic hydroxyl group-containing polyamide soluble in an aqueous alkali solution. The aqueous alkaline solution is an aqueous alkaline solution such as an aqueous tetramethylammonium hydroxide solution, an aqueous metal hydroxide solution, and an aqueous organic amine solution. The amide unit containing a hydroxy group represented by the general formula (I) finally has heat resistance,
It is converted into an oxazole compound having excellent mechanical and electrical properties.
【0016】本発明で用いる一般式(I)で表される繰
り返し単位を有するポリアミドは、前記繰り返し単位を
有していればよいが、ポリアミドのアルカリ水溶液に対
する可溶性は、フェノール性水酸基に由来するため、ヒ
ドロキシ基を含有するアミドユニットが、ある割合以上
含まれていることが好ましい。The polyamide having a repeating unit represented by the general formula (I) used in the present invention may have the repeating unit, but the solubility of the polyamide in an aqueous alkali solution is derived from phenolic hydroxyl groups. It is preferable that an amide unit containing a hydroxy group is contained in a certain ratio or more.
【0017】即ち、次式That is, the following equation
【化9】 (式中、Uは4価の有機基を示し、VとWは2価の有機
基を示す。jとkは、モル分率を示し、jとkの和は1
00モル%であり、jが60〜100モル%、kが40
〜0モル%である)で表されるポリアミドであることが
好ましい。ここで、式中のjとkのモル分率は、j=8
0〜100モル%、k=20〜0モル%であることが好
ましい。Embedded image (In the formula, U represents a tetravalent organic group, V and W represent a divalent organic group. J and k represent a mole fraction, and the sum of j and k is 1
00 mol%, j is 60 to 100 mol%, and k is 40
~ 0 mol%). Here, the mole fraction of j and k in the equation is j = 8
It is preferable that 0 to 100 mol% and k = 20 to 0 mol%.
【0018】(a)成分の分子量は、重量平均分子量で
3,000〜200,000が好ましく、5,000〜
100,000がより好ましい。ここで、分子量は、ゲ
ルパーミエーションクロマトグラフィー法により測定
し、標準ポリスチレン検量線より換算して得た値であ
る。The molecular weight of the component (a) is preferably from 3,000 to 200,000, more preferably from 5,000 to 200,000 in terms of weight average molecular weight.
100,000 is more preferred. Here, the molecular weight is a value measured by gel permeation chromatography and converted from a standard polystyrene calibration curve.
【0019】本発明において、一般式(I)で表される
繰り返し単位を有するポリアミドは、一般的にジカルボ
ン酸誘導体とヒドロキシ基含有ジアミン類とから合成で
きる。具体的には、ジカルボン酸誘導体をジハライド誘
導体に変換後、前記ジアミン類との反応を行うことによ
り合成できる。ジハライド誘導体としては、ジクロリド
誘導体が好ましい。In the present invention, the polyamide having a repeating unit represented by the general formula (I) can be generally synthesized from a dicarboxylic acid derivative and a hydroxy group-containing diamine. Specifically, it can be synthesized by converting a dicarboxylic acid derivative into a dihalide derivative and then reacting with the diamine. As the dihalide derivative, a dichloride derivative is preferable.
【0020】ジクロリド誘導体は、ジカルボン酸誘導体
にハロゲン化剤を作用させて合成することができる。ハ
ロゲン化剤としては通常のカルボン酸の酸クロ化反応に
使用される、塩化チオニル、塩化ホスホリル、オキシ塩
化リン、五塩化リン等が使用できる。The dichloride derivative can be synthesized by reacting a dicarboxylic acid derivative with a halogenating agent. As the halogenating agent, thionyl chloride, phosphoryl chloride, phosphorus oxychloride, phosphorus pentachloride, and the like, which are used in an ordinary acid chlorination reaction of carboxylic acid, can be used.
【0021】ジクロリド誘導体を合成する方法として
は、ジカルボン酸誘導体と上記ハロゲン化剤を溶媒中で
反応させるか、過剰のハロゲン化剤中で反応を行った
後、過剰分を留去する方法で合成できる。反応溶媒とし
は、N−メチル−2−ピロリドン、N−メチル−2−ピ
リドン、N,N−ジメチルアセトアミド、N,N−ジメ
チルホルムアミド、トルエン、ベンゼン等が使用でき
る。As a method for synthesizing the dichloride derivative, the dicarboxylic acid derivative is reacted with the above-mentioned halogenating agent in a solvent, or the reaction is carried out in an excess of the halogenating agent, and then the excess is distilled off. it can. As a reaction solvent, N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide, toluene, benzene and the like can be used.
【0022】これらのハロゲン化剤の使用量は、溶媒中
で反応させる場合は、ジカルボン酸誘導体に対して、
1.5〜3.0モルが好ましく、1.7〜2.5モルが
より好ましく、ハロゲン化剤中で反応させる場合は、
4.0〜50モルが好ましく、5.0〜20モルがより
好ましい。反応温度は、−10〜70℃が好ましく、0
〜20℃がより好ましい。When these halogenating agents are used in a solvent, the amount of the halogenating agent is based on the amount of the dicarboxylic acid derivative.
1.5 to 3.0 mol is preferable, and 1.7 to 2.5 mol is more preferable. When reacting in a halogenating agent,
4.0 to 50 mol is preferred, and 5.0 to 20 mol is more preferred. The reaction temperature is preferably from -10 to 70 ° C,
-20 ° C is more preferred.
【0023】ジクロリド誘導体とジアミン類との反応
は、脱ハロゲン化水素剤の存在下に、有機溶媒中で行う
ことが好ましい。脱ハロゲン化水素剤としては、通常、
ピリジン、トリエチルアミン等の有機塩基が使用され
る。また、有機溶媒としは、N−メチル−2−ピロリド
ン、N−メチル−2−ピリドン、N,N−ジメチルアセ
トアミド、N,N−ジメチルホルムアミド等が使用でき
る。反応温度は、−10〜30℃が好ましく、0〜20
℃がより好ましい。The reaction between the dichloride derivative and the diamine is preferably carried out in an organic solvent in the presence of a dehydrohalogenating agent. As the dehydrohalogenating agent, usually,
Organic bases such as pyridine and triethylamine are used. As the organic solvent, N-methyl-2-pyrrolidone, N-methyl-2-pyridone, N, N-dimethylacetamide, N, N-dimethylformamide and the like can be used. The reaction temperature is preferably from -10 to 30C, and from 0 to 20C.
C is more preferred.
【0024】ここで、一般式(I)において、Uで表さ
れる4価の有機基とは、一般に、ジカルボン酸と反応し
てポリアミド構造を形成する、2個のヒドロキシ基がそ
れぞれアミンのオルト位に位置した構造を有するジアミ
ンの残基であり、4価の芳香族基が好ましく、炭素原子
数としては6〜40のものが好ましく、炭素原子数6〜
40の4価の芳香族基がより好ましい。4価の芳香族基
としては、4個の結合部位がいずれも芳香環上に存在す
るものが好ましい。Here, in the general formula (I), the tetravalent organic group represented by U generally means that two hydroxy groups which react with a dicarboxylic acid to form a polyamide structure are each formed of an ortho group of an amine. Is a residue of a diamine having a structure located at a position, preferably a tetravalent aromatic group, preferably having 6 to 40 carbon atoms, and having 6 to 40 carbon atoms.
Forty tetravalent aromatic groups are more preferred. As the tetravalent aromatic group, a group in which all four binding sites are present on an aromatic ring is preferable.
【0025】このようなジアミン類としては、3,3’
−ジアミノ−4,4’−ジヒドロキシビフェニル、4,
4’−ジアミノ−3,3’−ジヒドロキシビフェニル、
ビス(3−アミノ−4−ヒドロキシフェニル)プロパ
ン、ビス(4−アミノ−3−ヒドロキシフェニル)プロ
パン、ビス(3−アミノ−4−ヒドロキシフェニル)ス
ルホン、ビス(4−アミノ−3−ヒドロキシフェニル)
スルホン、2,2−ビス(3−アミノ−4−ヒドロキシ
フェニル)−1,1,1,3,3,3−ヘキサフルオロ
プロパン、2,2−ビス(4−アミノ−3−ヒドロキシ
フェニル)−1,1,1,3,3,3−ヘキサフルオロ
プロパン等が挙げられる。これらの化合物は、単独で又
は2種以上を組み合わせて用いることができる。Such diamines include 3,3 ′
-Diamino-4,4'-dihydroxybiphenyl, 4,
4'-diamino-3,3'-dihydroxybiphenyl,
Bis (3-amino-4-hydroxyphenyl) propane, bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl)
Sulfone, 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4-amino-3-hydroxyphenyl)- 1,1,1,3,3,3-hexafluoropropane and the like. These compounds can be used alone or in combination of two or more.
【0026】また、前記ポリアミドの式において、Wで
表される2価の有機基とは、一般に、ジカルボン酸と反
応してポリアミド構造を形成する、ジアミンの残基であ
り、前記Uを形成するジアミン以外の残基であり、2価
の芳香族基又は脂肪族基が好ましく、炭素原子数として
は4〜40のものが好ましく、炭素原子数4〜40の2
価の芳香族基がより好ましい。In the above formula of the polyamide, the divalent organic group represented by W is generally a residue of a diamine which reacts with a dicarboxylic acid to form a polyamide structure, and forms the U. It is a residue other than a diamine, preferably a divalent aromatic group or an aliphatic group, and preferably has 4 to 40 carbon atoms, and has 2 to 4 carbon atoms.
A valent aromatic group is more preferred.
【0027】このようなジアミン類としては、4,4’
−ジアミノジフェニルエーテル、4,4’−ジアミノジ
フェニルメタン、4,4’−ジアミノジフェニルスルホ
ン、4,4’−ジアミノジフェニルスルフィド、ベンジ
シン、m−フェニレンジアミン、p−フェニレンジアミ
ン、1,5−ナフタレンジアミン、2,6−ナフタレン
ジアミン、ビス(4−アミノフェノキシフェニル)スル
ホン、ビス(3−アミノフェノキシフェニル)スルホ
ン、ビス(4−アミノフェノキシ)ビフェニル、ビス
[4−(4−アミノフェノキシ)フェニル]エーテル、
1,4−ビス(4−アミノフェノキシ)ベンゼン等の芳
香族ジアミン化合物、この他にもシリコーン基の入った
ジアミンとして、LP−7100、X−22−161A
S、X−22−161A、X−22−161B、X−2
2−161C及びX−22−161E(いずれも信越化
学工業株式会社製、商品名)等が挙げられる。これらの
化合物は、単独で又は2種以上を組み合わせて用いる。Such diamines include 4,4 ′
-Diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfide, benzine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2 , 6-Naphthalenediamine, bis (4-aminophenoxyphenyl) sulfone, bis (3-aminophenoxyphenyl) sulfone, bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) phenyl] ether,
Aromatic diamine compounds such as 1,4-bis (4-aminophenoxy) benzene, and other diamines containing silicone groups, such as LP-7100, X-22-161A
S, X-22-161A, X-22-161B, X-2
2-161C and X-22-161E (all manufactured by Shin-Etsu Chemical Co., Ltd., trade names) and the like. These compounds are used alone or in combination of two or more.
【0028】また一般式(I)において、Vで表される
2価の有機基とは、ジアミンと反応してポリアミド構造
を形成する、ジカルボン酸の残基であり、2価の芳香族
基が好ましく、炭素原子数としては6〜40のものが好
ましく、炭素原子数6〜40の2価の芳香族基がより好
ましい。2価の芳香族基としては、2個の結合部位がい
ずれも芳香環上に存在するものが好ましい。In the general formula (I), the divalent organic group represented by V is a residue of a dicarboxylic acid which reacts with a diamine to form a polyamide structure. Preferably, the number of carbon atoms is from 6 to 40, more preferably a divalent aromatic group having from 6 to 40 carbon atoms. As the divalent aromatic group, a group having two binding sites on an aromatic ring is preferable.
【0029】このようなジカルボン酸としては、イソフ
タル酸、テレフタル酸、2,2−ビス(4−カルボキシ
フェニル)−1,1,1,3,3,3−ヘキサフルオロ
プロパン、4,4’−ジカルボキシビフェニル、4,
4’−ジカルボキシジフェニルエーテル、4,4’−ジ
カルボキシテトラフェニルシラン、ビス(4−カルボキ
シフェニル)スルホン、2,2−ビス(p−カルボキシ
フェニル)プロパン、5−tert−ブチルイソフタル
酸、5−ブロモイソフタル酸、5−フルオロイソフタル
酸、5−クロロイソフタル酸、2,6−ナフタレンジカ
ルボン酸等の芳香族系ジカルボン酸、1,2−シクロブ
タンジカルボン酸、1,4−シクロヘキサンジカルボン
酸、1,3−シクロペンタンジカルボン酸、シュウ酸、
マロン酸、コハク酸等の脂肪族系ジカルボン酸などが挙
げられる。これらの化合物を、単独で又は2種以上を組
み合わせて使用することができる。Examples of such dicarboxylic acids include isophthalic acid, terephthalic acid, 2,2-bis (4-carboxyphenyl) -1,1,1,3,3,3-hexafluoropropane and 4,4'- Dicarboxybiphenyl, 4,
4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis (4-carboxyphenyl) sulfone, 2,2-bis (p-carboxyphenyl) propane, 5-tert-butylisophthalic acid, 5- Aromatic dicarboxylic acids such as bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, 1,2-cyclobutanedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, 1,3 -Cyclopentanedicarboxylic acid, oxalic acid,
Examples thereof include aliphatic dicarboxylic acids such as malonic acid and succinic acid. These compounds can be used alone or in combination of two or more.
【0030】本発明に使用される(b)成分である光に
より酸を発生する化合物は、感光剤であり、酸を発生さ
せ、光の照射部のアルカリ水溶液への可溶性を増大させ
る機能を有するものである。その種類としては、o−キ
ノンジアジド化合物、アリールジアゾニウム塩、ジアリ
ールヨードニウム塩、トリアリールスルホニウム塩など
が挙げられ、特に制限はないが、o−キノンジアジド化
合物が感度が高く好ましいものとして挙げられる。The compound which generates an acid by light, which is the component (b) used in the present invention, is a photosensitizer and has a function of generating an acid and increasing the solubility of the irradiated portion in an aqueous alkaline solution. Things. Examples of the type include an o-quinonediazide compound, an aryldiazonium salt, a diaryliodonium salt, and a triarylsulfonium salt. There is no particular limitation, but an o-quinonediazide compound is preferred because of its high sensitivity.
【0031】o−キノンジアジド化合物は、例えば、o
−キノンジアジドスルホニルクロリド類とヒドロキシ化
合物、アミノ化合物などとを脱塩酸剤の存在下で縮合反
応させることで得られる。前記o−キノンジアジドスル
ホニルクロリド類としては、例えば、ベンゾキノン−
1,2−ジアジド−4−スルホニルクロリド、ナフトキ
ノン−1,2−ジアジド−5−スルホニルクロリド、ナ
フトキノン−1,2−ジアジド−4−スルホニルクロリ
ド等が使用できる。The o-quinonediazide compound is, for example, o
-It is obtained by subjecting a quinonediazide sulfonyl chloride to a condensation reaction with a hydroxy compound, an amino compound and the like in the presence of a dehydrochlorinating agent. Examples of the o-quinonediazidosulfonyl chlorides include benzoquinone-
1,2-diazide-4-sulfonyl chloride, naphthoquinone-1,2-diazide-5-sulfonyl chloride, naphthoquinone-1,2-diazide-4-sulfonyl chloride and the like can be used.
【0032】前記ヒドロキシ化合物としては、例えば、
ヒドロキノン、レゾルシノール、ピロガロール、ビスフ
ェノールA、ビス(4−ヒドロキシフェニル)メタン、
2,2−ビス(4−ヒドロキシフェニル)ヘキサフルオ
ロプロパン、2,3,4−トリヒドロキシベンゾフェノ
ン、2,3,4,4’−テトラヒドロキシベンゾフェノ
ン、2,2’,4,4’−テトラヒドロキシベンゾフェ
ノン、2,3,4,2’,3’−ペンタヒドロキシベン
ゾフェノン,2,3,4,3’,4’,5’−ヘキサヒ
ドロキシベンゾフェノン、ビス(2,3,4−トリヒド
ロキシフェニル)メタン、ビス(2,3,4−トリヒド
ロキシフェニル)プロパン、4b,5,9b,10−テ
トラヒドロ−1,3,6,8−テトラヒドロキシ−5,
10−ジメチルインデノ[2,1−a]インデン、トリ
ス(4−ヒドロキシフェニル)メタン、トリス(4−ヒ
ドロキシフェニル)エタンなどが使用できる。As the hydroxy compound, for example,
Hydroquinone, resorcinol, pyrogallol, bisphenol A, bis (4-hydroxyphenyl) methane,
2,2-bis (4-hydroxyphenyl) hexafluoropropane, 2,3,4-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone, 2,2 ′, 4,4′-tetrahydroxy Benzophenone, 2,3,4,2 ', 3'-pentahydroxybenzophenone, 2,3,4,3', 4 ', 5'-hexahydroxybenzophenone, bis (2,3,4-trihydroxyphenyl) methane , Bis (2,3,4-trihydroxyphenyl) propane, 4b, 5,9b, 10-tetrahydro-1,3,6,8-tetrahydroxy-5,
10-dimethylindeno [2,1-a] indene, tris (4-hydroxyphenyl) methane, tris (4-hydroxyphenyl) ethane and the like can be used.
【0033】アミノ化合物としては、例えば、p−フェ
ニレンジアミン、m−フェニレンジアミン、4,4’−
ジアミノジフェニルエーテル、4,4’−ジアミノジフ
ェニルメタン、4,4’−ジアミノジフェニルスルホ
ン、4,4’−ジアミノジフェニルスルフィド、o−ア
ミノフェノール、m−アミノフェノール、p−アミノフ
ェノール、3,3’−ジアミノ−4,4’−ジヒドロキ
シビフェニル、4,4’−ジアミノ−3,3’−ジヒド
ロキシビフェニル、ビス(3−アミノ−4−ヒドロキシ
フェニル)プロパン、ビス(4−アミノ−3−ヒドロキ
シフェニル)プロパン、ビス(3−アミノ−4−ヒドロ
キシフェニル)スルホン、ビス(4−アミノ−3−ヒド
ロキシフェニル)スルホン、ビス(3−アミノ−4−ヒ
ドロキシフェニル)ヘキサフルオロプロパン、ビス(4
−アミノ−3−ヒドロキシフェニル)ヘキサフルオロプ
ロパンなどが使用できる。Examples of the amino compound include p-phenylenediamine, m-phenylenediamine, 4,4'-
Diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfide, o-aminophenol, m-aminophenol, p-aminophenol, 3,3'-diamino -4,4'-dihydroxybiphenyl, 4,4'-diamino-3,3'-dihydroxybiphenyl, bis (3-amino-4-hydroxyphenyl) propane, bis (4-amino-3-hydroxyphenyl) propane, Bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, bis (3-amino-4-hydroxyphenyl) hexafluoropropane, bis (4
-Amino-3-hydroxyphenyl) hexafluoropropane and the like can be used.
【0034】o−キノンジアジドスルホニルクロリドと
ヒドロキシ化合物及び/又はアミノ化合物とは、o−キ
ノンジアジドスルホニルクロリド1モルに対して、ヒド
ロキシ基とアミノ基の合計が0.5〜1当量になるよう
に配合されることが好ましい。脱塩酸剤とo−キノンジ
アジドスルホニルクロリドの好ましい割合は、0.95
/1〜1/0.95の範囲である。好ましい反応温度は
0〜40℃、好ましい反応時間は1〜10時間とされ
る。The o-quinonediazidosulfonyl chloride and the hydroxy compound and / or the amino compound are blended so that the total of the hydroxy group and the amino group is 0.5 to 1 equivalent per 1 mol of the o-quinonediazidosulfonyl chloride. Preferably. A preferred ratio of the dehydrochlorinating agent to o-quinonediazide sulfonyl chloride is 0.95
/ 1 to 1 / 0.95. The preferred reaction temperature is 0 to 40 ° C, and the preferred reaction time is 1 to 10 hours.
【0035】反応溶媒としては,ジオキサン,アセト
ン,メチルエチルケトン,テトラヒドロフラン,ジエチ
ルエーテル,N−メチルピロリドン等の溶媒が用いられ
る。脱塩酸剤としては,炭酸ナトリウム,水酸化ナトリ
ウム,炭酸水素ナトリウム,炭酸カリウム,水酸化カリ
ウム,トリメチルアミン,トリエチルアミン,ピリジン
などがあげられる。As a reaction solvent, a solvent such as dioxane, acetone, methyl ethyl ketone, tetrahydrofuran, diethyl ether, N-methylpyrrolidone and the like is used. Examples of the dehydrochlorinating agent include sodium carbonate, sodium hydroxide, sodium hydrogen carbonate, potassium carbonate, potassium hydroxide, trimethylamine, triethylamine, pyridine and the like.
【0036】本発明の感光性重合体組成物において、
(b)成分の配合量は、露光部と未露光部の溶解速度差
と、感度の許容幅の点から、(a)成分100重量部に
対して5〜100重量部が好ましく、8〜40重量部が
より好ましい。In the photosensitive polymer composition of the present invention,
The blending amount of the component (b) is preferably 5 to 100 parts by weight, and more preferably 8 to 40 parts by weight based on 100 parts by weight of the component (a) from the viewpoint of the dissolution rate difference between the exposed and unexposed parts and the allowable range of sensitivity. Parts by weight are more preferred.
【0037】本発明に使用される(c)成分は、分子内
に2個以上のアシルオキシメチル基とフェノール性水酸
基を有する化合物である。(c)成分の使用により、ア
ルカリ水溶液で現像する際に露光部の溶解速度が増加し
感度が上がり、また、パターン形成後の膜の硬化時に、
膜の溶融を防ぐことができる。(c)成分は、分子量が
大きくなると露光部の溶解促進効果が小さくなるので、
一般に分子量が1,500以下の化合物が好ましい。
(c)成分としては、前記一般式(II)で示される化
合物が好ましいものとして挙げられる。The component (c) used in the present invention is a compound having two or more acyloxymethyl groups and a phenolic hydroxyl group in the molecule. The use of the component (c) increases the dissolution rate of the exposed portion when developing with an alkaline aqueous solution, thereby increasing the sensitivity. In addition, when the film is cured after pattern formation,
Melting of the film can be prevented. As the component (c) has a larger molecular weight, the effect of accelerating the dissolution of the exposed portion decreases,
Generally, compounds having a molecular weight of 1,500 or less are preferred.
As the component (c), a compound represented by the general formula (II) is preferable.
【0038】一般式(II)において、Xで示される2
価の基としては、メチレン基、エチレン基、プロピレン
基等の炭素数が1〜10のアルキレン基、エチリデン基
等の炭素数が2〜10のアルキリデン基、フェニレン基
等の炭素数が6〜30のアリーレン基、これら炭化水素
基の水素原子の一部又は全部をフッ素原子等のハロゲン
原子で置換した基、スルホン基、カルボニル基、エーテ
ル結合、チオエーテル結合、アミド結合等が挙げられ、
また下記一般式In the general formula (II), 2 represented by X
Examples of the valent group include an alkylene group having 1 to 10 carbon atoms such as a methylene group, an ethylene group and a propylene group, an alkylidene group having 2 to 10 carbon atoms such as an ethylidene group, and a carbon atom having 6 to 30 carbon atoms such as a phenylene group. Arylene group, a group obtained by substituting a part or all of the hydrogen atoms of these hydrocarbon groups with a halogen atom such as a fluorine atom, a sulfone group, a carbonyl group, an ether bond, a thioether bond, an amide bond, and the like.
The following general formula
【化10】 (式中、個々のX’は、各々独立に、単結合、アルキレ
ン基(例えば炭素原子数が1〜10のもの)、アルキリ
デン基(例えば炭素数が2〜10のもの)、それらの水
素原子の一部又は全部をハロゲン原子で置換した基、ス
ルホン基、カルボニル基、エーテル結合、チオエーテル
結合、アミド結合等から選択されるものであり、R9は
水素原子、ヒドロキシ基、アルキル基又はハロアルキル
基であり、複数存在する場合は互いに同一でも異なって
いてもよく、mは1〜10である)で示される2価の有
機基が挙げられる。Embedded image (Wherein each X ′ independently represents a single bond, an alkylene group (for example, having 1 to 10 carbon atoms), an alkylidene group (for example, having 2 to 10 carbon atoms), a hydrogen atom thereof Selected from a group in which part or all of is substituted with a halogen atom, a sulfone group, a carbonyl group, an ether bond, a thioether bond, an amide bond, etc. And when there are a plurality of such groups, they may be the same or different from each other, and m is from 1 to 10).
【0039】一般式(II)の中で、Xで表される基
が、In the general formula (II), the group represented by X is
【化11】 (式中、2つのAは各々独立に水素原子又は炭素原子数
1〜10のアルキル基を示す)であるものはその効果が
高く好ましいものとして挙げられる。Embedded image (Wherein two A's each independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms) is preferred because of its high effect.
【0040】一般式(II)で表される化合物として
は、ビス(2−ヒドロキシ−3−アセトキシメチル−5
−メチルフェニル)メタン、ビス(2−ヒドロキシ−3
−エチルカルボニルオキシメチル−5−メチルフェニ
ル)メタン、ビス(2−ヒドロキシ−3−プロピルカル
ボニルオキシメチル−5−メチルフェニル)メタン、ビ
ス(2−ヒドロキシ−3−ブチルカルボニルオキシメチ
ル−5−メチルフェニル)メタン、ビス(2−ヒドロキ
シ−3−アセトキシメチル−5−メチルフェニル)エタ
ン、ビス(2−ヒドロキシ−3−エチルカルボニルオキ
シメチル−5−メチルフェニル)エタン、3,3’−ビ
ス(アセトキシメチル)−4,4’−ジヒドロキシビフ
ェニル、3,3’−ビス(エチルカルボニルオキシメチ
ル)−4,4’−ジヒドロキシビフェニル、4,4’−
ジヒドロキシ−3,3’,5,5’−テトラキス(アセ
トキシメチル)ビフェニル、4,4’−ジヒドロキシ−
3,3’,5,5’−テトラキス(エチルカルボニルオ
キシメチル)ビフェニル、ビス(4−ヒドロキシ−3−
アセトキシメチルフェニル)メタン、ビス(4−ヒドロ
キシ−3−エチルカルボニルオキシメチルフェニル)メ
タン、ビス[4−ヒドロキシ−3,5−ビス(アセトキ
シメチル)フェニル]メタン、ビス[4−ヒドロキシ−
3,5−ビス(エチルカルボニルオキシメチル)フェニ
ル]メタン等が挙げられる。これらの中で、特にビス
(2−ヒドロキシ−3−アセトキシメチル−5−メチル
フェニル)メタンは効果が高く最も好ましいものとして
挙げられる。The compound represented by the general formula (II) includes bis (2-hydroxy-3-acetoxymethyl-5)
-Methylphenyl) methane, bis (2-hydroxy-3)
-Ethylcarbonyloxymethyl-5-methylphenyl) methane, bis (2-hydroxy-3-propylcarbonyloxymethyl-5-methylphenyl) methane, bis (2-hydroxy-3-butylcarbonyloxymethyl-5-methylphenyl) ) Methane, bis (2-hydroxy-3-acetoxymethyl-5-methylphenyl) ethane, bis (2-hydroxy-3-ethylcarbonyloxymethyl-5-methylphenyl) ethane, 3,3′-bis (acetoxymethyl) ) -4,4′-Dihydroxybiphenyl, 3,3′-bis (ethylcarbonyloxymethyl) -4,4′-dihydroxybiphenyl, 4,4′-
Dihydroxy-3,3 ', 5,5'-tetrakis (acetoxymethyl) biphenyl, 4,4'-dihydroxy-
3,3 ′, 5,5′-tetrakis (ethylcarbonyloxymethyl) biphenyl, bis (4-hydroxy-3-
Acetoxymethylphenyl) methane, bis (4-hydroxy-3-ethylcarbonyloxymethylphenyl) methane, bis [4-hydroxy-3,5-bis (acetoxymethyl) phenyl] methane, bis [4-hydroxy-
3,5-bis (ethylcarbonyloxymethyl) phenyl] methane and the like. Of these, bis (2-hydroxy-3-acetoxymethyl-5-methylphenyl) methane is particularly preferred because of its high effect.
【0041】本発明の感光性重合体組成物において、
(c)成分の配合量は、現像時間と、未露光部残膜率の
許容幅の点から、(a)成分100重量部に対して1〜
30重量部が好ましく、5〜20重量部がより好まし
い。In the photosensitive polymer composition of the present invention,
The amount of the component (c) is 1 to 100 parts by weight of the component (a) in view of the development time and the allowable width of the unexposed portion residual film ratio.
30 parts by weight is preferable, and 5 to 20 parts by weight is more preferable.
【0042】本発明において、必要に応じ使用される
(d)成分は、(a)成分のアルカリ水溶液に対する溶
解性を阻害する化合物である。このような(d)成分と
しては、オニウム塩、ジアリール化合物及びテトラアル
キルアンモニウム塩が好ましい。オニウム塩としては、
ジアリールヨードニウム塩等のヨードニウム塩、トリア
リ−ルスルホニウム塩等のスルホニウム塩、ホスホニウ
ム塩、アリールジアゾニウム塩等のジアゾニウム塩など
が挙げられる。ジアリール化合物としては、ジアリール
尿素、ジアリールスルホン、ジアリールケトン、ジアリ
ールエーテル、ジアリールプロパン、ジアリールヘキサ
フルオロプロパン等の二つのアリール基が結合基を介し
て結合したものが挙げられ、前記アリール基としては、
フェニル基が好ましい。テトラアルキルアンモニウム塩
としては、前記アルキル基がメチル基、エチル基等のテ
トラアルキルアンミニウムハライドが挙げられる。In the present invention, the component (d) used as required is a compound which inhibits the solubility of the component (a) in an aqueous alkaline solution. As such component (d), onium salts, diaryl compounds and tetraalkylammonium salts are preferred. As onium salts,
Iodonium salts such as diaryliodonium salts; sulfonium salts such as triarylsulfonium salts; phosphonium salts; and diazonium salts such as aryldiazonium salts. Examples of the diaryl compound include a diaryl urea, a diaryl sulfone, a diaryl ketone, a diaryl ether, a diaryl propane, and a diaryl hexafluoropropane in which two aryl groups such as diaryl hexafluoropropane are bonded via a bonding group.
A phenyl group is preferred. Examples of the tetraalkylammonium salt include tetraalkylammonium halides in which the alkyl group is a methyl group, an ethyl group, or the like.
【0043】これらの中で良好な溶解阻害効果を示すも
のとしては、ジアリールヨードニウム塩、ジアリール尿
素化合物、ジアリールスルホン化合物、テトラメチルア
ンモニウムハライド化合物等が挙げられ、ジアリール尿
素化合物としてはジフェニル尿素、ジメチルジフェニル
尿素等が挙げられ、テトラメチルアンモニウムハライド
化合物としては、テトラメチルアンモニウムクロライ
ド、テトラメチルアンモニウムブロミド、テトラメチル
アンモニウムヨーダイドなどが挙げられる。Among them, diaryl iodonium salts, diaryl urea compounds, diaryl sulfone compounds, tetramethylammonium halide compounds, etc., which show good dissolution inhibiting effects, are exemplified. Examples of the diaryl urea compounds are diphenyl urea, dimethyl diphenyl Urea and the like can be mentioned, and as the tetramethylammonium halide compound, tetramethylammonium chloride, tetramethylammonium bromide, tetramethylammonium iodide and the like can be mentioned.
【0044】中でも、一般式(III)In particular, the general formula (III)
【化12】 (式中、X-は対陰イオンを示し、R3及びR4は各々独
立にアルキル基又はアルケニル基を示し、a及びbは各
々独立に0〜5の整数である。)で表されるジアリール
ヨードニウム塩化合物が好ましい。陰イオンとしては、
硝酸イオン、4弗化硼素イオン、過塩素酸イオン、トリ
フルオロメタンスルホン酸イオン、p−トルエンスルホ
ン酸イオン、チオシアン酸イオン、塩素イオン、臭素イ
オン、沃素イオン等が挙げられる。Embedded image (Wherein, X − represents a counter anion, R 3 and R 4 each independently represent an alkyl group or an alkenyl group, and a and b each independently represent an integer of 0 to 5). Diaryliodonium salt compounds are preferred. As the anion,
Examples thereof include nitrate ion, boron fluoride ion, perchlorate ion, trifluoromethanesulfonic acid ion, p-toluenesulfonic acid ion, thiocyanate ion, chlorine ion, bromine ion, and iodine ion.
【0045】ジアリールヨードニウム塩としては、例え
ば、ジフェニルヨードニウムニトラート、ビス(p−t
ert−ブチルフェニル)ヨードニウムニトラート、ジ
フェニルヨードニウムトリフルオロメタンスルホナー
ト、ビス(p−tert−ブチルフェニル)ヨードニウ
ムトリフルオロメタンスルホナート、ジフェニルヨード
ニウムブロマイド、ジフェニルヨードニウムクロリド、
ジフェニルヨードニウムヨーダイト等が使用できる。Examples of the diaryliodonium salt include diphenyliodonium nitrate and bis (pt
tert-butylphenyl) iodonium nitrate, diphenyliodonium trifluoromethanesulfonate, bis (p-tert-butylphenyl) iodonium trifluoromethanesulfonate, diphenyliodonium bromide, diphenyliodonium chloride,
Diphenyl iodonium iodide and the like can be used.
【0046】これらの中で、ジフェニルヨードニウムニ
トラート、ジフェニルヨードニウムトリフルオロメタン
スルホナート及びジフェニルヨードニウム−8−アニリ
ノナフタレン−1−スルホナートが、効果が高く好まし
いものとして挙げられる。Among these, diphenyliodonium nitrate, diphenyliodonium trifluoromethanesulfonate and diphenyliodonium-8-anilinonaphthalene-1-sulfonate are mentioned as those having high effects and being preferred.
【0047】(d)成分の配合量は、感度と、現像時間
の許容幅の点から、(a)成分100重量部に対して
0.01〜30重量部が好ましく、0.01〜10重量
部がより好ましく、0.05〜3重量部がさらに好まし
く、0.1〜2重量部が特に好ましい。本発明の感光性
重合体組成物は、前記(a)成分、(b)成分、(c)
成分、及び、必要に応じて(d)成分を溶剤に溶解して
得ることができる。The amount of the component (d) is preferably 0.01 to 30 parts by weight, more preferably 0.01 to 10 parts by weight, per 100 parts by weight of the component (a), in view of sensitivity and the allowable range of the developing time. Parts by weight, more preferably 0.05 to 3 parts by weight, particularly preferably 0.1 to 2 parts by weight. The photosensitive polymer composition of the present invention comprises the component (a), the component (b), and the component (c).
It can be obtained by dissolving the components and, if necessary, the component (d) in a solvent.
【0048】溶剤としては、例えば、N−メチル−2−
ピロリドン、N,N−ジメチルホルムアミド、N,N−
ジメチルアセトアミド、ジメチルスルホキシド、ヘキサ
メチルホスホリルアミド、テトラメチレンスルホン、γ
−ブチロラクトン等の非プロトン性極性溶剤が好まし
く、これらを単独で又は2種以上併用して用いられる。As the solvent, for example, N-methyl-2-
Pyrrolidone, N, N-dimethylformamide, N, N-
Dimethylacetamide, dimethylsulfoxide, hexamethylphosphorylamide, tetramethylene sulfone, γ
-Aprotic polar solvents such as butyrolactone are preferred, and these are used alone or in combination of two or more.
【0049】また、塗布性向上のため、ジエチルケト
ン、ジイソブチルケトン、メチルアミルケトン、乳酸エ
チル、プロピレンフリコールモノメチルエーテルアセテ
ート等の溶剤を併用することができる。溶剤の量は特に
制限はないが、一般に組成物中溶剤の量が20〜90重
量%となるように調整される。Further, in order to improve coating properties, a solvent such as diethyl ketone, diisobutyl ketone, methyl amyl ketone, ethyl lactate, propylene glycol monomethyl ether acetate or the like can be used in combination. The amount of the solvent is not particularly limited, but is generally adjusted so that the amount of the solvent in the composition is 20 to 90% by weight.
【0050】本発明の感光性重合体組成物は、さらに必
要に応じて接着助剤として、有機シラン化合物、アルミ
キレート化合物等を含むことができる。有機シラン化合
物としては、例えば、γ−アミノプロピルトリメトキシ
シラン、γ−アミノプロピルトリエトキシシラン、ビニ
ルトリエトキシシラン、γ−グリシドキシプロピルトリ
エトキシシラン、γ―メタクリロキシプロピルトリメト
キシシラン、尿素プロピルトリエトキシシラン、等が挙
げられる。アルミキレート化合物としては、例えば、ト
リス(アセチルアセトネート)アルミニウム、アセチル
アセテートアルミニウムジイソプロピレート等が挙げら
れる。The photosensitive polymer composition of the present invention may further contain, if necessary, an organic silane compound, an aluminum chelate compound or the like as an adhesion aid. Examples of the organic silane compound include, for example, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, vinyltriethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-methacryloxypropyltrimethoxysilane, ureapropyl And triethoxysilane. Examples of the aluminum chelate compound include aluminum tris (acetylacetonate), aluminum acetylacetate diisopropylate and the like.
【0051】本発明の感光性重合体組成物は、支持基板
上に塗布し乾燥する工程、露光する工程、現像する工程
及び加熱処理する工程を経て、ポリベンゾオキサゾール
のパターンとすることができる。支持基板上に塗布し乾
燥する工程では、ガラス基板、半導体、金属酸化物絶縁
体(例えばTiO2、SiO2等)、窒化ケイ素などの支
持基板上に、この感光性重合体組成物をスピンナーなど
を用いて回転塗布後、ホットプレート、オーブンなどを
用いて乾燥する。The photosensitive polymer composition of the present invention can be formed into a pattern of polybenzoxazole through the steps of coating and drying on a supporting substrate, exposing, developing, and heating. In the step of coating on a supporting substrate and drying, the photosensitive polymer composition is coated on a supporting substrate such as a glass substrate, a semiconductor, a metal oxide insulator (eg, TiO 2 , SiO 2 ), or silicon nitride by using a spinner or the like. After spin coating using, it is dried using a hot plate, oven or the like.
【0052】次いで、露光工程では、支持基板上で被膜
となった感光性重合体組成物に、マスクを介して紫外
線、可視光線、放射線などの活性光線を照射する。現像
工程では、露光部を現像液で除去することによりパター
ンが得られる。現像液としては、例えば、水酸化ナトリ
ウム,水酸化カリウム,ケイ酸ナトリウム,アンモニ
ア,エチルアミン,ジエチルアミン,トリエチルアミ
ン,トリエタノールアミン,テトラメチルアンモニウム
ヒドロキシドなどのアルカリ水溶液が好ましいものとし
て挙げられる。これらの水溶液の塩基濃度は、0.1〜
10重量%とされることが好ましい。さらに上記現像液
にアルコール類や界面活性剤を添加して使用することも
できる。これらはそれぞれ、現像液100重量部に対し
て、好ましくは0.01〜10重量部、より好ましくは
0.1〜5重量部の範囲で配合することができる。Next, in the exposure step, the photosensitive polymer composition coated on the supporting substrate is irradiated with actinic rays such as ultraviolet rays, visible rays and radiation through a mask. In the developing step, a pattern is obtained by removing the exposed portion with a developing solution. Preferred examples of the developer include an aqueous alkali solution such as sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, and tetramethylammonium hydroxide. The base concentration of these aqueous solutions is 0.1 to
It is preferably 10% by weight. Further, an alcohol or a surfactant may be added to the above-mentioned developer for use. Each of these may be added in an amount of preferably 0.01 to 10 parts by weight, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the developer.
【0053】ついで、加熱処理工程では、得られたパタ
ーンに好ましくは150〜450℃の加熱処理をするこ
とにより、オキサゾール環や他の官能基を有する耐熱性
のポリベンズオキサゾールのパターンになる。Then, in the heat treatment step, a heat-resistant polybenzoxazole pattern having an oxazole ring and other functional groups is obtained by subjecting the obtained pattern to a heat treatment preferably at 150 to 450 ° C.
【0054】本発明の感光性重合体組成物は、半導体装
置や多層配線板等の電子部品に使用することができ、具
体的には、半導体装置の表面保護膜や層間絶縁膜、多層
配線板の層間絶縁膜等の形成に使用することができる。
本発明の半導体装置は、前記組成物を用いて形成される
表面保護膜や層間絶縁膜を有すること以外は特に制限さ
れず、様々な構造をとることができる。The photosensitive polymer composition of the present invention can be used for electronic parts such as semiconductor devices and multilayer wiring boards, and specifically, surface protective films and interlayer insulating films of semiconductor devices, multilayer wiring boards. Can be used to form an interlayer insulating film and the like.
The semiconductor device of the present invention is not particularly limited except that it has a surface protective film and an interlayer insulating film formed using the composition, and can have various structures.
【0055】本発明の半導体装置の製造工程の一例を以
下に説明する。図1は多層配線構造の半導体装置の製造
工程図である。図において、回路素子を有するSi基板
等の半導体基板は、回路素子の所定部分を除いてシリコ
ン酸化膜等の保護膜2で被覆され、露出した回路素子上
に第1導体層が形成されている。前記半導体基板上にス
ピンコート法等で層間絶縁膜としてのポリイミド樹脂等
の膜4が形成される(工程(a))。An example of the manufacturing process of the semiconductor device of the present invention will be described below. FIG. 1 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure. In the figure, a semiconductor substrate such as a Si substrate having a circuit element is covered with a protective film 2 such as a silicon oxide film except for a predetermined portion of the circuit element, and a first conductor layer is formed on the exposed circuit element. . A film 4 of a polyimide resin or the like as an interlayer insulating film is formed on the semiconductor substrate by a spin coating method or the like (step (a)).
【0056】次に塩化ゴム系またはフェノールノボラッ
ク系の感光性樹脂層5が前記層間絶縁膜4上にスピンコ
ート法で形成され、公知の写真食刻技術によって所定部
分の層間絶縁膜4が露出するように窓6Aが設けられて
いる(工程(b))。前記窓6Aの層間絶縁膜4は、酸
素、四フッ化炭素等のガスを用いるドライエッチング手
段によって選択的にエッチングされ、窓6Bがあけられ
ている。ついで窓6Bから露出した第1導体層3を腐食
することなく、感光樹脂層5のみを腐食するようなエッ
チング溶液を用いて感光樹脂層5が完全に除去される
(工程(c))。Next, a photosensitive resin layer 5 of a chlorinated rubber type or a phenol novolak type is formed on the interlayer insulating film 4 by spin coating, and a predetermined portion of the interlayer insulating film 4 is exposed by a known photolithography technique. Window 6A is provided as described above (step (b)). The interlayer insulating film 4 in the window 6A is selectively etched by a dry etching means using a gas such as oxygen or carbon tetrafluoride, and a window 6B is opened. Next, the photosensitive resin layer 5 is completely removed by using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the first conductor layer 3 exposed from the window 6B (step (c)).
【0057】さらに公知の写真食刻技術を用いて、第2
導体層7を形成させ、第1導体層3との電気的接続が完
全に行われる(工程(d))。3層以上の多層配線構造
を形成する場合は、上記の工程を繰り返して行い各層を
形成することができる。Further, using a known photolithography technique,
The conductor layer 7 is formed, and the electrical connection with the first conductor layer 3 is made completely (step (d)). When a multilayer wiring structure of three or more layers is formed, the above steps are repeated to form each layer.
【0058】次に表面保護膜8が形成される。この図の
例では、この表面保護膜を前記感光性重合体組成物をス
ピンコート法にて塗布、乾燥し、所定部分に窓6Cを形
成するパターンを描いたマスク上から光を照射した後ア
ルカリ水溶液にて現像してパターンを形成し、加熱して
ポリベンゾオキサゾール膜とする。このポリベンゾオキ
サゾール膜は、導体層を外部からの応力、α線などから
保護するものであり、得られる半導体装置は信頼性に優
れる。なお、上記例において、層間絶縁膜を本発明の感
光性重合体組成物を用いて形成することも可能である。Next, a surface protection film 8 is formed. In the example of this figure, the surface protective film is coated with the photosensitive polymer composition by a spin coating method, dried, and irradiated with light from a mask on which a pattern for forming a window 6C is drawn on a predetermined portion. A pattern is formed by developing with an aqueous solution, and heated to form a polybenzoxazole film. This polybenzoxazole film protects the conductor layer from external stress, α-rays, and the like, and the resulting semiconductor device has excellent reliability. In the above example, the interlayer insulating film can be formed using the photosensitive polymer composition of the present invention.
【0059】[0059]
【実施例】以下、本発明を実施例により説明する。 実施例1 攪拌機及び温度計を備えた0.5リットルのフラスコ中
に、4,4’−ジカルボキシジフェニルエーテル21.
7g(0.084モル)及びN−メチルピロリドン(N
MP)125gを仕込み、フラスコを0℃に冷却し、塩
化チオニル20.0g(0.168モル)を反応温度を
10℃以下に保持しながら滴下し、滴下後10℃付近で
30分間撹拌して、4,4’−ジカルボキシジフェニル
エーテルジクロリドの溶液(α)を得た。The present invention will be described below with reference to examples. Example 1 4,4'-Dicarboxydiphenyl ether in a 0.5 liter flask equipped with stirrer and thermometer
7 g (0.084 mol) and N-methylpyrrolidone (N
MP), the flask was cooled to 0 ° C., and 20.0 g (0.168 mol) of thionyl chloride was added dropwise while maintaining the reaction temperature at 10 ° C. or lower. After the dropwise addition, the mixture was stirred at around 10 ° C. for 30 minutes. , 4,4'-Dicarboxydiphenyl ether dichloride solution (α) was obtained.
【0060】次いで、攪拌機及び温度計を備えた0.5
リットルのフラスコ中に、N−メチルピロリドン100
gを仕込み、2,2−ビス(3−アミノ−4−ヒドロキ
シフェニル)−1,1,1,3,3,3−ヘキサフルオ
ロプロパン23.4g(0.10モル)を添加し、攪拌
溶解した後、ピリジン26.6gを添加した。この溶液
を冷却し、温度を0〜10℃に保ちながら、4,4’−
ジカルボキシジフェニルエーテルジクロリドの溶液
(α)を30分間かけて滴下した後、10℃付近で30
分間撹拌した。反応液を4リットルの水に投入し、析出
物を回収、洗浄した後、40℃で二日間減圧乾燥してポ
リヒドロキシアミドを得た。Then, 0.5 g equipped with a stirrer and a thermometer was used.
In a liter flask, add 100 parts of N-methylpyrrolidone.
g, and 2,3.4 g (0.10 mol) of 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane was added thereto, followed by dissolution with stirring. After that, 26.6 g of pyridine were added. The solution was cooled, and the temperature was kept at 0 to 10 ° C., and
The solution (α) of dicarboxydiphenyl ether dichloride was added dropwise over 30 minutes, and then 30 ° C at around 30 ° C.
Stirred for minutes. The reaction solution was poured into 4 liters of water, the precipitate was collected, washed, and dried under reduced pressure at 40 ° C. for 2 days to obtain polyhydroxyamide.
【0061】ポリヒドロキシアミド15.00g及びト
リス(4−ヒドロキシフェニル)メタンとナフトキノン
−1,2−ジアジド−4−スルホニルクロリドを、1/
2.9のモル比で反応させたオルトキノンジアジド化合
物2.25g、ビス(2−ヒドロキシ−3−アセトキシ
メチル−5−メチルフェニル)メタン1.5g、尿素プ
ロピルトリエトキシシランの50%メタノール溶液0.
30gを、N−メチルピロリドン23.00gに攪拌溶
解した。この溶液を3μm孔のテフロン(登録商標)フ
ィルタを用いて加圧濾過して感光性重合体組成物を得
た。15.00 g of polyhydroxyamide and tris (4-hydroxyphenyl) methane and naphthoquinone-1,2-diazide-4-sulfonyl chloride were combined with 1 / g
2.25 g of an orthoquinonediazide compound reacted at a molar ratio of 2.9, 1.5 g of bis (2-hydroxy-3-acetoxymethyl-5-methylphenyl) methane, and a 50% methanol solution of ureapropyltriethoxysilane in 0. 0%.
30 g was stirred and dissolved in 23.00 g of N-methylpyrrolidone. This solution was filtered under pressure using a Teflon (registered trademark) filter having a pore size of 3 μm to obtain a photosensitive polymer composition.
【0062】得られた感光性重合体組成物をスピンナー
によりシリコンウェハ上に回転塗布し、ホットプレート
上110℃で3分間加熱乾燥を行い、7.6μmの塗膜
を得た。この塗膜に露光機としてi線ステッパ(株式会
社日立製作所製)を用い、レティクルを介し、100〜
500mJ/cm2の露光をした。次いで、テトラメチ
ルアンモニウムヒドロキシドの2.38重量%水溶液を
現像液とし35秒間パドル現像を行い、純水で洗浄して
レリーフパターンを得た。パターン観察により、適正露
光量は350mJ/cm2と判断され、この露光量で良
好な形状のパターンが形成された。未露光部の残膜率は
79%であった。得られたパターンを窒素雰囲気下、3
50℃で1時間加熱処理したところ、良好な形状のポリ
ベンズオキサゾール膜のパターンが得られた。The obtained photosensitive polymer composition was spin-coated on a silicon wafer by a spinner, and dried by heating on a hot plate at 110 ° C. for 3 minutes to obtain a 7.6 μm coating film. An i-line stepper (manufactured by Hitachi, Ltd.) is used as an exposure machine for this coating film, and a reticle is applied to the coating film.
Exposure was performed at 500 mJ / cm 2 . Next, paddle development was performed for 35 seconds using a 2.38% by weight aqueous solution of tetramethylammonium hydroxide as a developing solution, followed by washing with pure water to obtain a relief pattern. From the pattern observation, the appropriate exposure was determined to be 350 mJ / cm 2, and a pattern having a good shape was formed at this exposure. The residual film ratio of the unexposed portion was 79%. Under an atmosphere of nitrogen,
After heat treatment at 50 ° C. for 1 hour, a polybenzoxazole film pattern having a good shape was obtained.
【0063】実施例2 実施例1で作成したポリヒドロキシアミド15.00
g、トリス(4−ヒドロキシフェニル)メタンとナフト
キノン−1,2−ジアジド−4−スルホニルクロリドを
1/2.9のモル比で反応させたオルトキノンジアジド
化合物2.25g、ビス(2−ヒドロキシ−3−エチル
カルボニルオキシメチル−5−メチルフェニル)メタン
1.5g、及び尿素プロピルトリエトキシシランの50
%メタノール溶液0.30gを、N−メチルピロリドン
23.00gに攪拌溶解した。この溶液を3μm孔のテ
フロンフィルタを用いて加圧濾過して感光性重合体組成
物を得た。Example 2 Polyhydroxyamide 15.00 prepared in Example 1
g, 2.25 g of an orthoquinonediazide compound obtained by reacting tris (4-hydroxyphenyl) methane with naphthoquinone-1,2-diazide-4-sulfonyl chloride in a molar ratio of 1 / 2.9, bis (2-hydroxy-3 1.5 g of -ethylcarbonyloxymethyl-5-methylphenyl) methane and 50 g of ureapropyltriethoxysilane.
0.30 g of a 30% methanol solution was dissolved in 23.00 g of N-methylpyrrolidone with stirring. This solution was filtered under pressure using a Teflon filter having a pore size of 3 μm to obtain a photosensitive polymer composition.
【0064】得られた感光性重合体組成物をスピンナー
を使用してシリコンウェハ上に回転塗布し、ホットプレ
ート上110℃で3分間加熱乾燥を行い、7.5μmの
塗膜を得た。この塗膜に露光機としてi線ステッパ(株
式会社日立製作所製)を用い、レティクルを介し、10
0〜500mJ/cm2の露光をした。次いで、テトラ
メチルアンモニウムヒドロキシドの2.38重量%水溶
液を現像液とし50秒間パドル現像を行い、純水で洗浄
してレリーフパターンを得た。パターン観察により、適
正露光量は350mJ/cm2と判断され、この露光量
で良好な形状のパターンが形成された。未露光部の残膜
率は80%であった。得られたパターンを窒素雰囲気下
350℃で1時間加熱処理したところ、良好な形状のポ
リベンズオキサゾール膜のパターンが得られた。The obtained photosensitive polymer composition was spin-coated on a silicon wafer using a spinner, and dried by heating at 110 ° C. for 3 minutes on a hot plate to obtain a coating film having a thickness of 7.5 μm. Using an i-line stepper (manufactured by Hitachi, Ltd.) as an exposure machine,
Exposure was performed at 0 to 500 mJ / cm 2 . Subsequently, paddle development was performed for 50 seconds using a 2.38% by weight aqueous solution of tetramethylammonium hydroxide as a developing solution, and washed with pure water to obtain a relief pattern. From the pattern observation, the appropriate exposure was determined to be 350 mJ / cm 2, and a pattern having a good shape was formed at this exposure. The residual film ratio of the unexposed portion was 80%. When the obtained pattern was heated at 350 ° C. for 1 hour in a nitrogen atmosphere, a pattern of a polybenzoxazole film having a good shape was obtained.
【0065】実施例3 実施例1で作成したポリヒドロキシアミド15.00
g、トリス(4−ヒドロキシフェニル)メタンとナフト
キノン−1,2−ジアジド−4−スルホニルクロリドを
1/2.9のモル比で反応させた化合物2.25g、ビ
ス(2−ヒドロキシ−3−アセトキシメチル−5−メチ
ルフェニル)メタン1.5g、ジフェニルヨードニウム
ニトラート0.15g及び尿素プロピルトリエトキシシ
ランの50重量%メタノール溶液0.30gをNMP2
3.00gに攪拌溶解した。この溶液を3μm孔のテフ
ロンフィルタを用いて加圧濾過して感光性重合体組成物
を得た。Example 3 Polyhydroxyamide prepared in Example 1 15.00
g, 2.25 g of a compound obtained by reacting tris (4-hydroxyphenyl) methane with naphthoquinone-1,2-diazido-4-sulfonyl chloride in a molar ratio of 1 / 2.9, bis (2-hydroxy-3-acetoxy) 1.5 g of methyl-5-methylphenyl) methane, 0.15 g of diphenyliodonium nitrate and 0.30 g of a 50% by weight methanol solution of ureapropyltriethoxysilane were added to NMP2.
The mixture was dissolved in 3.00 g with stirring. This solution was filtered under pressure using a Teflon filter having a pore size of 3 μm to obtain a photosensitive polymer composition.
【0066】得られた感光性重合体組成物をスピンナー
を使用してシリコンウェハ上に回転塗布し、ホットプレ
ート上110℃で3分間加熱乾燥を行い、7.7μmの
ポジ型感光性樹脂組成物の膜を得た。この感光性ポリイ
ミド前駆体塗膜にi線縮小投影露光装置((株)日立製
作所製 LD−5010i)を用い、レティクルを介
し、100〜500mJ/cm2の露光をした。次い
で、テトラメチルアンモニウムヒドロキシドの2.38
重量%水溶液を現像液として80秒間パドル現像を行
い、純水で洗浄してパターンを得た。パターン観察によ
り、適正露光量は300mJ/cm2と判断され、この
露光量で良好な形状のパターンが形成された。未露光部
の残膜率は82%であった。このパターンを窒素雰囲気
下350℃で1時間加熱処理したところ良好な形状のポ
リベンズオキサゾール膜のパターンを得た。The obtained photosensitive polymer composition was spin-coated on a silicon wafer using a spinner, and dried by heating at 110 ° C. for 3 minutes on a hot plate to obtain a 7.7 μm positive photosensitive resin composition. Was obtained. The photosensitive polyimide precursor coating film was exposed at 100 to 500 mJ / cm 2 via a reticle using an i-line reduction projection exposure apparatus (LD-5010i manufactured by Hitachi, Ltd.). Then, 2.38 of tetramethylammonium hydroxide
Paddle development was performed for 80 seconds using a weight% aqueous solution as a developing solution, followed by washing with pure water to obtain a pattern. By pattern observation, the appropriate exposure was determined to be 300 mJ / cm 2, and a pattern having a good shape was formed at this exposure. The residual film ratio of the unexposed portion was 82%. When this pattern was subjected to heat treatment at 350 ° C. for 1 hour in a nitrogen atmosphere, a pattern of a polybenzoxazole film having a good shape was obtained.
【0067】比較例1 実施例1で得られたポリヒドロキシアミド15.00
g、トリス(4−ヒドロキシフェニル)メタンとナフト
キノン−1,2−ジアジド−4−スルホニルクロリドを
1/2.9のモル比で反応させたオルトキノンジアジド
化合物2.25g及び尿素プロピルトリエトキシシラン
の50%メタノール溶液0.30gを、N−メチルピロ
リドン23.00gに攪拌溶解した。この溶液を3μm
孔のテフロンフィルタを用いて加圧濾過して感光性重合
体組成物を得た。Comparative Example 1 The polyhydroxyamide obtained in Example 1 15.00
g, 2.25 g of an orthoquinonediazide compound obtained by reacting tris (4-hydroxyphenyl) methane with naphthoquinone-1,2-diazido-4-sulfonyl chloride in a molar ratio of 1 / 2.9, and 50% of ureapropyltriethoxysilane. 0.30 g of a 30% methanol solution was dissolved in 23.00 g of N-methylpyrrolidone with stirring. 3 μm of this solution
The photosensitive polymer composition was obtained by filtration under pressure using a Teflon filter having pores.
【0068】得られた感光性重合体組成物をスピンナー
を使用してシリコンウェハ上に回転塗布し、ホットプレ
ート上110℃で3分間加熱乾燥を行い、7.5μmの
塗膜を得た。この塗膜に露光機としてi線ステッパ(株
式会社日立製作所製)を用い、レティクルを介し、10
0〜500mJ/cm2の露光をした。次いで、テトラ
メチルアンモニウムヒドロキシドの2.38重量%水溶
液を現像液とし60秒間パドル現像を行い、純水で洗浄
してパターンを得た。パターン観察により、適正露光量
は450mJ/cm2と判断された。未露光部の残膜率
は80%であった。The obtained photosensitive polymer composition was spin-coated on a silicon wafer using a spinner, and dried by heating at 110 ° C. for 3 minutes on a hot plate to obtain a coating film of 7.5 μm. Using an i-line stepper (manufactured by Hitachi, Ltd.) as an exposure machine,
Exposure was performed at 0 to 500 mJ / cm 2 . Next, paddle development was performed for 60 seconds using a 2.38% by weight aqueous solution of tetramethylammonium hydroxide as a developing solution, followed by washing with pure water to obtain a pattern. By pattern observation, the appropriate exposure was determined to be 450 mJ / cm 2 . The residual film ratio of the unexposed portion was 80%.
【0069】[0069]
【発明の効果】本発明の感光性重合体組成物は、感度が
高く、解像度が高く、パターンの形状や未露光部の残膜
率も良好で、耐熱性にも優れるものである。また本発明
のパターンの製造法によれば、前記の、感度が高い組成
物の使用により、解像度が高く、良好な形状のパターン
が得られる。また、本発明の電子部品は、良好な形状の
ポリベンゾオキサゾールのパターンを表面保護膜または
層間絶縁膜として有することにより、信頼性が高いもの
である。The photosensitive polymer composition of the present invention has a high sensitivity, a high resolution, a good pattern shape and a good residual film ratio in unexposed areas, and has excellent heat resistance. Further, according to the method for producing a pattern of the present invention, a pattern having a high resolution and a good shape can be obtained by using the composition having high sensitivity. Further, the electronic component of the present invention has high reliability by having a polybenzoxazole pattern having a good shape as a surface protective film or an interlayer insulating film.
【図面の簡単な説明】[Brief description of the drawings]
【図1】 多層配線構造の半導体装置の製造工程図であ
る。FIG. 1 is a manufacturing process diagram of a semiconductor device having a multilayer wiring structure.
1…半導体基板、2…保護膜、3…第1導体層、4…層
間絶縁膜層、5…感光樹脂層、6A、6B、6C…窓、
7…第2導体層、8…表面保護膜層。DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Protective film, 3 ... First conductor layer, 4 ... Interlayer insulating film layer, 5 ... Photosensitive resin layer, 6A, 6B, 6C ... Window,
7: second conductor layer, 8: surface protective film layer.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) G03F 7/004 501 G03F 7/004 501 503 503Z H01L 21/027 H01L 21/312 D 21/312 21/30 502R (72)発明者 布村 昌隆 茨城県日立市東町四丁目13番1号 日立化 成デュポンマイクロシステムズ株式会社山 崎開発センタ内 (72)発明者 安斎 隆徳 茨城県日立市東町四丁目13番1号 日立化 成デュポンマイクロシステムズ株式会社山 崎開発センタ内 (72)発明者 藤枝 永敏 茨城県日立市東町四丁目13番1号 日立化 成デュポンマイクロシステムズ株式会社山 崎開発センタ内 Fターム(参考) 2H025 AA01 AA02 AA03 AA10 AB16 AB17 AC01 AD03 BE07 CB24 CC20 4J002 CL071 EB116 EB118 EJ067 EQ016 EQ036 EV077 EV227 EV296 FD206 GP03 5F058 AC06 AC07 AC10 AF04 AG01 AH02 AH03 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G03F 7/004 501 G03F 7/004 501 503 503Z H01L 21/027 H01L 21/312 D 21/312 21/30 502R (72) Inventor Masataka Nunomura 4-3-1, Higashi-cho, Hitachi, Ibaraki Hitachi Chemical DuPont Microsystems, Inc. Yamazaki Development Center (72) Inventor Takanori Anzai 13-1, Higashi-cho, Hitachi, Ibaraki Hitachi Chemical Dupont Microsystems Co., Ltd. Yamazaki Development Center (72) Inventor Nagatoshi Fujieda 4-3-1-1, Higashicho, Hitachi City, Ibaraki Prefecture Hitachi Chemical Dupont Microsystems Co., Ltd. Yamazaki Development Center F-term (reference) 2H025 AA01 AA02 AA03 AA10 AB16 AB17 AC01 AD03 BE07 CB24 CC20 4J002 CL071 EB116 EB 118 EJ067 EQ016 EQ036 EV077 EV227 EV296 FD206 GP03 5F058 AC06 AC07 AC10 AF04 AG01 AH02 AH03
Claims (11)
示す)で表される繰り返し単位を有するアルカリ水溶液
可溶性のポリアミド、(b)光により酸を発生する化合
物、並びに、(c)分子中に2個以上のアシルオキシメ
チル基とフェノール性水酸基とを有する化合物を含有し
てなる感光性重合体組成物。(1) (a) General formula (I) (Wherein, U represents a tetravalent organic group, and V represents a divalent organic group), an aqueous alkali-soluble polyamide having a repeating unit represented by the formula: (b) a compound capable of generating an acid by light, and And (c) a photosensitive polymer composition containing a compound having two or more acyloxymethyl groups and a phenolic hydroxyl group in a molecule.
キル基又はアルケニル基を示し、R1及びR2は各々独立
にアルキル基又はアルケニル基を示し、m及びnは各々
独立に1又は2であり、p及びqは各々独立に0〜3の
整数である)で表される化合物である請求項1記載の感
光性重合体組成物。The component (c) is represented by the general formula (II): (Wherein, X represents a single bond or a divalent organic group, R represents an alkyl group or an alkenyl group, R 1 and R 2 each independently represent an alkyl group or an alkenyl group, and m and n each represent an independent group. And p and q are each independently an integer of 0 to 3.) The photosensitive polymer composition according to claim 1, wherein
1〜10のアルキル基を示す)である請求項2記載の感
光性重合体組成物。(3) a group represented by X: (Wherein two A's each independently represent a hydrogen atom or an alkyl group having 1 to 10 carbon atoms).
(2−ヒドロキシ−3−アセトキシメチル−5−メチル
フェニル)メタンである請求項3記載の感光性重合体組
成物。4. The photosensitive polymer composition according to claim 3, wherein the compound represented by the general formula (II) is bis (2-hydroxy-3-acetoxymethyl-5-methylphenyl) methane.
成分5〜100重量部、(c)成分1〜30重量部を配
合する請求項1〜4の何れかに記載の感光性重合体組成
物。5. The composition of (b) with respect to 100 parts by weight of the component (a).
The photosensitive polymer composition according to any one of claims 1 to 4, wherein 5 to 100 parts by weight of the component and 1 to 30 parts by weight of the component (c) are blended.
(a)成分の溶解を阻害する化合物を含有する請求項1
〜5の何れかに記載の感光性重合体組成物。6. The method according to claim 1, further comprising (d) a compound which inhibits the dissolution of the component (a) in an aqueous alkali solution.
6. The photosensitive polymer composition according to any one of items 1 to 5.
立にアルキル基、アルケニル基を示し、a及びbは各々
独立に0〜5の整数である)で表されるジアリールヨー
ドニウム塩を含む請求項6記載の感光性重合体組成物。(7) The component (d) has the general formula (III): (Wherein, X − represents a counter anion, R 3 and R 4 each independently represent an alkyl group or an alkenyl group, and a and b each independently represent an integer of 0 to 5). 7. The photosensitive polymer composition according to claim 6, comprising an iodonium salt.
成分5〜100重量部、(c)成分1〜30重量部、
(d)成分0.01〜15重量部を配合する請求項6又
は7記載の感光性重合体組成物。(8) 100 parts by weight of the component (a) and (b)
5 to 100 parts by weight of component, 1 to 30 parts by weight of component (c),
The photosensitive polymer composition according to claim 6, wherein (d) component is added in an amount of 0.01 to 15 parts by weight.
体組成物を支持基板上に塗布し乾燥する工程、露光する
工程、現像する工程及び加熱処理する工程を含むパター
ンの製造法。9. A pattern production method comprising the steps of applying the photosensitive polymer composition according to any one of claims 1 to 8 on a support substrate, drying, exposing, developing, and heating. Law.
i線である請求項9記載のパターンの製造方法。10. A light source used in the step of exposing,
The method for producing a pattern according to claim 9, wherein the pattern is i-line.
られるパターンを表面保護膜又は層間絶縁膜として有し
てなる電子部品。11. An electronic component comprising a pattern obtained by the method according to claim 9 as a surface protective film or an interlayer insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000364142A JP2002169283A (en) | 2000-11-30 | 2000-11-30 | Photosensitive polymer composition, method for manufacturing pattern, and electronic parts |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000364142A JP2002169283A (en) | 2000-11-30 | 2000-11-30 | Photosensitive polymer composition, method for manufacturing pattern, and electronic parts |
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| Publication Number | Publication Date |
|---|---|
| JP2002169283A true JP2002169283A (en) | 2002-06-14 |
Family
ID=18835138
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|---|---|---|---|
| JP2000364142A Pending JP2002169283A (en) | 2000-11-30 | 2000-11-30 | Photosensitive polymer composition, method for manufacturing pattern, and electronic parts |
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| Country | Link |
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| JP (1) | JP2002169283A (en) |
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