JP2002076549A - Metal base circuit board - Google Patents
Metal base circuit boardInfo
- Publication number
- JP2002076549A JP2002076549A JP2000253561A JP2000253561A JP2002076549A JP 2002076549 A JP2002076549 A JP 2002076549A JP 2000253561 A JP2000253561 A JP 2000253561A JP 2000253561 A JP2000253561 A JP 2000253561A JP 2002076549 A JP2002076549 A JP 2002076549A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- metal
- rubber particles
- adhesive layer
- silicone rubber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 50
- 239000002184 metal Substances 0.000 title claims abstract description 50
- 239000002245 particle Substances 0.000 claims abstract description 45
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 28
- 239000004945 silicone rubber Substances 0.000 claims abstract description 28
- 239000012790 adhesive layer Substances 0.000 claims abstract description 17
- 239000011888 foil Substances 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000003822 epoxy resin Substances 0.000 claims abstract description 12
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 239000011256 inorganic filler Substances 0.000 claims abstract description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 229920001971 elastomer Polymers 0.000 claims description 16
- 229920001296 polysiloxane Polymers 0.000 claims description 13
- -1 polysiloxane Polymers 0.000 claims description 12
- 238000003860 storage Methods 0.000 claims description 10
- 238000009835 boiling Methods 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 11
- 239000012153 distilled water Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000004094 surface-active agent Substances 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000459 Nitrile rubber Polymers 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 101100255205 Caenorhabditis elegans rsa-2 gene Proteins 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- 101000650817 Homo sapiens Semaphorin-4D Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 102100027744 Semaphorin-4D Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UKLDJPRMSDWDSL-UHFFFAOYSA-L [dibutyl(dodecanoyloxy)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCC)(CCCC)OC(=O)CCCCCCCCCCC UKLDJPRMSDWDSL-UHFFFAOYSA-L 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 239000012975 dibutyltin dilaurate Substances 0.000 description 1
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011403 purification operation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、応力緩和性に優
れ、しかも絶縁信頼性及び放熱性に優れた金属ベ−ス回
路基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal-based circuit board which is excellent in stress relaxation, insulation reliability and heat dissipation.
【0002】[0002]
【従来の技術】従来より、金属板上に無機フィラ−を充
填したエポキシ樹脂等からなる絶縁層を設け、その上に
導電回路を配設した金属ベース回路基板が、熱放散性に
優れることから高発熱性電子部品を実装する回路基板と
して用いられている。2. Description of the Related Art Conventionally, a metal base circuit board having an insulating layer made of an epoxy resin or the like filled with an inorganic filler on a metal plate and having a conductive circuit disposed thereon has excellent heat dissipation. It is used as a circuit board on which high heat-generating electronic components are mounted.
【0003】一方、車載用電子機器について、その小型
化、省スペ−ス化と共に電子機器をエンジンル−ム内に
設置することが要望されている。エンジンル−ム内は温
度が高く、温度変化が大きいなど過酷な環境であり、ま
た、放熱面積の大きな基板が必要とされる。このような
用途に対して、放熱性に優れる前記金属ベ−ス回路基板
が注目されている。[0003] On the other hand, there is a demand for mounting and disposing electronic equipment in an engine room together with the downsizing and space saving of the on-vehicle electronic equipment. The inside of the engine room has a severe environment such as a high temperature and a large temperature change, and a substrate having a large heat radiation area is required. For such applications, attention has been paid to the metal-based circuit boards having excellent heat dissipation.
【0004】従来の金属ベ−ス回路基板は、熱放散性や
経済的な理由からアルミニウム板を用いることが多い
が、実使用下で加熱/冷却が繰り返されると、前記アル
ミニウム板と電子部品、特にチップ部品との熱膨張率の
差に起因して大きな熱応力が発生し、部品を固定してい
る半田部分或いはその近傍にクラックが発生するなど電
気的信頼性が低下するという問題点がある。このような
点を改良するためには、絶縁接着層を熱伝導性が高く、
低弾性率にして、さらに高レベルの耐熱性、耐湿性を有
することが必要である。このような目的のために、たと
えば特開平10−242606号公報には反応性アクリ
ルゴムで低弾性率化した組成物が開示されているが、耐
湿性は未だ十分ではない。A conventional metal-based circuit board often uses an aluminum plate for heat dissipation and economical reasons. However, if heating / cooling is repeated in actual use, the aluminum plate and the electronic components, In particular, there is a problem that a large thermal stress is generated due to a difference in a coefficient of thermal expansion from a chip component, and cracks are generated in a solder portion fixing the component or in the vicinity thereof, thereby lowering electrical reliability. . In order to improve such a point, the insulating adhesive layer has high thermal conductivity,
It is necessary to have a low elastic modulus and a high level of heat resistance and moisture resistance. For such a purpose, for example, Japanese Patent Application Laid-Open No. Hei 10-242606 discloses a composition in which the elastic modulus is reduced by using a reactive acrylic rubber, but the moisture resistance is not yet sufficient.
【0005】[0005]
【発明が解決しようとする課題】本発明は、上記の事情
に鑑みてなされたものであり、温度上昇/温度降下を繰
り返し受けても半田或いはその近傍でクラック発生等の
異常を生じにくく、かつ耐熱性、耐湿性及び放熱性に優
れる金属ベ−ス回路基板を提供することを目的とするも
のである。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and is unlikely to cause cracks or other abnormalities in the solder or in the vicinity thereof even if the temperature is repeatedly increased / decreased. It is an object of the present invention to provide a metal-based circuit board having excellent heat resistance, moisture resistance and heat dissipation.
【0006】[0006]
【課題を解決するための手段】本発明は、金属板の少な
くとも一主面に絶縁性の接着層を介して導電性金属箔が
張り合わせてなる金属ベース回路基板であって、前記絶
縁接着層がエポキシ樹脂を主体とする樹脂、硬化剤化合
物、ゴム粒子及び無機充填剤を含み、該ゴム粒子の煮沸
抽出水の電気伝導度が200μS/cm以下であること
を特徴とする金属ベース回路基板である。 また、ゴム
粒子はエポキシ変性されていることが好ましく、平均粒
径は5〜20μmであることが好ましく、ゴム粒子がシ
リコーンゴム粒子である場合は粒子中の未反応ポリシロ
キサンが精製されていることが好ましい。更に、本発明
の金属ベース回路基板の絶縁接着層の貯蔵弾性率は30
0Kで15000MPa以下であることが好ましい。According to the present invention, there is provided a metal base circuit board in which a conductive metal foil is adhered to at least one principal surface of a metal plate via an insulating adhesive layer. A metal-based circuit board comprising a resin mainly composed of an epoxy resin, a curing agent compound, rubber particles, and an inorganic filler, wherein the electrical conductivity of the boiling extraction water of the rubber particles is 200 μS / cm or less. . The rubber particles are preferably epoxy-modified, and the average particle diameter is preferably 5 to 20 μm. When the rubber particles are silicone rubber particles, the unreacted polysiloxane in the particles is purified. Is preferred. Further, the storage elastic modulus of the insulating adhesive layer of the metal-based circuit board of the present invention is 30.
It is preferably 15000 MPa or less at 0K.
【0007】[0007]
【発明の実施の形態】本発明で使用される絶縁接着層
は、エポキシ樹脂を主体とする樹脂、硬化剤化合物、ゴ
ム粒子及び無機充填剤を組み合わせることにより、応力
緩和性、電気絶縁性、放熱性、耐熱性、耐湿性に優れた
硬化物を提供することができる。エポキシ樹脂は、ビス
フェノールF型エポキシ樹脂、ビスフェノールA型エポ
キシ樹脂、フェノールノボラック型エポキシ樹脂やクレ
ゾールノボラック型エポキシ樹脂等が用いられる。耐湿
性の点から、ナトリウムや塩素等のイオン性の不純物が
少ないものを用いることが好ましい。また、エポキシ樹
脂を主体に他の樹脂として、フェノール樹脂、ポリイミ
ド樹脂等の熱硬化性樹脂やフェノキシ樹脂等の高分子量
樹脂を、応力緩和性、電気絶縁性、耐熱性、耐湿性のバ
ランスを考慮すると、他の樹脂の配合量はエポキシ樹脂
との合計量に対して30質量%以下であることが好まし
い。BEST MODE FOR CARRYING OUT THE INVENTION The insulating adhesive layer used in the present invention is made of a combination of a resin mainly composed of an epoxy resin, a curing agent compound, rubber particles and an inorganic filler to provide stress relaxation, electric insulation and heat dissipation. A cured product having excellent heat resistance, heat resistance and moisture resistance can be provided. As the epoxy resin, a bisphenol F epoxy resin, a bisphenol A epoxy resin, a phenol novolak epoxy resin, a cresol novolak epoxy resin, or the like is used. From the viewpoint of moisture resistance, it is preferable to use a material containing few ionic impurities such as sodium and chlorine. In addition, epoxy resin as the main resin, thermosetting resin such as phenolic resin and polyimide resin and high molecular weight resin such as phenoxy resin, considering the balance of stress relaxation, electrical insulation, heat resistance and moisture resistance Then, the compounding amount of the other resin is preferably 30% by mass or less based on the total amount with the epoxy resin.
【0008】硬化剤は特に限定しないが、電気絶縁性、
耐湿性の点から、芳香族アミンやフェノールノボラック
樹脂等が好ましい。芳香族アミン系硬化剤としては、ジ
アミノジフェニルメタン、ジアミノジフェニルスルフォ
ン、メタフェニレンジアミン等が使用できる。The curing agent is not particularly limited.
From the viewpoint of moisture resistance, aromatic amines and phenol novolak resins are preferred. As the aromatic amine-based curing agent, diaminodiphenylmethane, diaminodiphenylsulfone, metaphenylenediamine and the like can be used.
【0009】ゴム粒子はシリコーンゴム、NBRやアク
リルゴム等の粒子状のものを用いる。応力緩和性の点か
らゴムのTgは0℃以下が好ましい。なかでもシリコー
ンゴムが、Tgが最も低く低温領域における貯蔵弾性率
を下げる効果が大きいことや耐熱性・耐湿性に優れるた
め好ましい。ゴム粒子の一般的な製法は、原料モノマー
またはオリゴマーを界面活性剤水溶液中に乳化分散させ
て、触媒の存在下で加熱して重合または反応させ、最終
的にスプレー乾燥により得られる。シリコーンゴムの場
合の製法例としては、たとえば、1分子中にケイ素原子
結合ヒドロキシル基を少なくとも2個有するオルガノポ
リシロキサンと1分子中にケイ素原子結合水素を少なく
とも2個有するオルガノハイドロジェンポリシロキサン
とを白金またはスズ系の硬化触媒の存在下で脱水素反応
させて得られる。粒子状のシリコーンゴムは、上記未硬
化の液状組成物を界面活性剤を用いて水の中に分散さ
せ、その分散液を高温の気体中に噴霧して硬化・乾燥さ
せることによって得られる。上記のような方法により得
られたゴム粒子の表面には界面活性剤が残存しており、
必要により表面を洗浄して、煮沸抽出水の電気伝導度が
200μS/cm以下にすることにより、耐湿絶縁性が
向上する。ゴム粒子はその表面がエポキシ変性されてい
る方が絶縁層と導電性金属箔との接着性に優れるので好
ましい。エポキシ変性は、シリコーンゴムの場合は、前
記ケイ素原子結合ヒドロキシ基を少なくとも2個有する
オルガノポリシロキサンの一部を、たとえばγーグリシ
ドキシプロピルトリメトキシシランのようなエポキシ基
を有するシラン化合物に置き換えて反応させることによ
り得られ、NBRやアクリルゴム等の場合は、グリシジ
ルメタクリレートのようなエポキシ基を有するモノマー
を共重合して得られる。また、ゴム粒子の粒子径は界面
活性剤の種類や量、噴霧条件等により調節することがで
きるが、平均粒子径が5〜20μmの時が絶縁接着層と
導電性金属箔との接着性に優れる。また、シリコーンゴ
ム粒子の場合は反応後も通常2〜4質量%の未反応ポリ
シロキサンが残存しており、トルエン等のポリシロキサ
ンを溶解する有機溶剤で洗浄するこにより、粒子内部に
存在する未反応ポリシロキサンも容易に精製でき、絶縁
接着層と導電性金属箔の接着性が向上する。更に、通常
の界面活性剤はトルエン等の有機溶剤に可溶なので、表
面に残存する界面活性剤も同時に洗浄できるので耐湿絶
縁性も向上させることができる。As the rubber particles, particles such as silicone rubber, NBR and acrylic rubber are used. From the viewpoint of stress relaxation, the Tg of the rubber is preferably 0 ° C. or lower. Among them, silicone rubber is preferred because it has the lowest Tg and has a large effect of lowering the storage elastic modulus in a low temperature region and is excellent in heat resistance and moisture resistance. A general method for producing rubber particles is obtained by emulsifying and dispersing a raw material monomer or oligomer in an aqueous surfactant solution, heating and polymerizing or reacting in the presence of a catalyst, and finally by spray drying. Examples of the production method for silicone rubber include, for example, an organopolysiloxane having at least two silicon-bonded hydroxyl groups in one molecule and an organohydrogenpolysiloxane having at least two silicon-bonded hydrogens in one molecule. It is obtained by performing a dehydrogenation reaction in the presence of a platinum or tin-based curing catalyst. The particulate silicone rubber is obtained by dispersing the above uncured liquid composition in water using a surfactant, spraying the dispersion in a high-temperature gas, and curing and drying. Surfactant remains on the surface of the rubber particles obtained by the above method,
If necessary, the surface is washed and the electrical conductivity of the boiling extraction water is set to 200 μS / cm or less, whereby the moisture-resistant insulation is improved. It is preferable that the rubber particles have their surfaces modified with epoxy, because the adhesion between the insulating layer and the conductive metal foil is excellent. In the case of silicone rubber, in the case of silicone rubber, a part of the organopolysiloxane having at least two silicon-bonded hydroxy groups is replaced with a silane compound having an epoxy group such as γ-glycidoxypropyltrimethoxysilane. In the case of NBR or acrylic rubber, it is obtained by copolymerizing a monomer having an epoxy group such as glycidyl methacrylate. The particle size of the rubber particles can be adjusted by the type and amount of the surfactant, spraying conditions, etc., but when the average particle size is 5 to 20 μm, the adhesiveness between the insulating adhesive layer and the conductive metal foil can be improved. Excellent. In the case of silicone rubber particles, 2 to 4% by mass of unreacted polysiloxane usually remains after the reaction, and the silicone rubber particles are washed with an organic solvent dissolving polysiloxane such as toluene to remove unreacted polysiloxane inside the particles. The reactive polysiloxane can also be easily purified, and the adhesion between the insulating adhesive layer and the conductive metal foil is improved. Further, since a normal surfactant is soluble in an organic solvent such as toluene, the surfactant remaining on the surface can be washed at the same time, so that the moisture-proof insulation can be improved.
【0010】無機充填剤は、電気絶縁性が良好で、しか
も高熱伝導率のものが用いられ、このようなものとして
酸化アルミニウム、窒化アルミニウム、窒化珪素、窒化
ホウ素、シリカ等があり、単独系でも混合系でも用いる
ことができる。これらのうち、酸化アルミニウムは粒子
形状が球状で高充填可能なものが安価に、容易に入手で
きるという理由で好ましい。無機充填剤は予めエポキシ
シラン、アミノシラン等のシランカップリング剤で表面
処理するか、絶縁接着剤中にシランカップリング剤を配
合することにより、導電性金属箔との接着性を向上させ
ることができる。As the inorganic filler, those having good electric insulation and high thermal conductivity are used, such as aluminum oxide, aluminum nitride, silicon nitride, boron nitride and silica. A mixed system can also be used. Among them, aluminum oxide having a spherical particle shape and being highly packable is preferable because it is inexpensive and easily available. The inorganic filler can be surface-treated in advance with a silane coupling agent such as epoxy silane or amino silane, or by blending the silane coupling agent in the insulating adhesive, the adhesion to the conductive metal foil can be improved. .
【0011】本発明の絶縁接着層の硬化後の貯蔵弾性率
は、300Kで15000MPa以下であることが好ま
しい。15000MPa以上だと、応力緩和性に劣る。
貯蔵弾性率が低すぎると外力が加わった時に変形して絶
縁信頼性が損なわれる可能性があるので、300Kで1
00MPa以上あることが好ましい。The storage elastic modulus of the insulating adhesive layer of the present invention after curing is preferably 15000 MPa or less at 300K. If it is 15000 MPa or more, the stress relaxation property is poor.
If the storage elastic modulus is too low, it may be deformed when an external force is applied and insulation reliability may be impaired.
It is preferably at least 00 MPa.
【0012】絶縁接着層の厚みは、応力緩和性、放熱
性、絶縁信頼性、生産性等を考慮して決められるが、通
常は50〜150μm程度である。The thickness of the insulating adhesive layer is determined in consideration of stress relaxation, heat dissipation, insulation reliability, productivity, etc., and is usually about 50 to 150 μm.
【0013】導体回路となる導電性金属箔としては、
銅、アルミニウム、ニッケル、鉄、錫、銀、チタニウム
のいずれか、これらの金属を2種類以上含む合金、或い
は前記金属又は合金を使用したクラッド箔等を用いるこ
とができる。尚、前記箔の製造方法は電解法でも圧延法
で作製したものでもよく、箔上にはNiメッキ、Ni−
Auメッキ、半田メッキなどの金属メッキがほどこされ
ていてもかまわないが、絶縁接着層との接着性の点から
導体回路の絶縁接着層に接する側の表面はエッチングや
メッキ等により予め粗化処理されていることが一層好ま
しい。As the conductive metal foil serving as a conductor circuit,
Any of copper, aluminum, nickel, iron, tin, silver, and titanium, an alloy containing two or more of these metals, a clad foil using the metal or the alloy, or the like can be used. The foil may be manufactured by an electrolytic method or a rolling method.
Although metal plating such as Au plating or solder plating may be applied, the surface of the conductor circuit in contact with the insulating adhesive layer is roughened in advance by etching, plating, etc. from the viewpoint of adhesiveness with the insulating adhesive layer. It is more preferred that
【0014】本発明に用いられる金属板は、アルミニウ
ム、鉄、銅およびそれらの合金、もしくはこれらのクラ
ッド材等からなり、その厚みは特に規定するものではな
いが、熱放散性に富みしかも経済的であることから、厚
み0.5〜5.0mmのアルミニウムが一般的に選択さ
れる。The metal plate used in the present invention is made of aluminum, iron, copper and their alloys, or their clad materials, and the thickness thereof is not particularly limited, but is rich in heat dissipation and economical. Therefore, aluminum having a thickness of 0.5 to 5.0 mm is generally selected.
【0015】尚、本発明の金属ベース回路基板の製造方
法に関しては、硬化性樹脂組成物に適宜分散剤、消泡剤
やレベリング剤等の添加剤を添加した絶縁材料を金属板
及び/又は金属箔上に塗布し、金属箔又は金属板を張り
合わせた後に十分に硬化させ、その後金属箔より回路形
成する方法、或いは予め絶縁材料からなるシ−トを作製
しておき、前記シートを介して金属板と金属箔を張り合
わせ回路形成する方法、或いは前記方法に於いて金属箔
に変えて予め回路形成されている導体回路を直接に用い
る方法等の従来公知の方法で得ることができる。In the method for producing a metal-based circuit board according to the present invention, an insulating material obtained by appropriately adding an additive such as a dispersant, an antifoaming agent or a leveling agent to a curable resin composition is formed on a metal plate and / or a metal. Applying on a foil, laminating a metal foil or a metal plate and then curing it sufficiently, then forming a circuit from the metal foil, or preparing a sheet made of an insulating material in advance, It can be obtained by a conventionally known method such as a method of bonding a plate and a metal foil to form a circuit, or a method of directly using a conductor circuit formed in advance of a circuit instead of the metal foil in the above method.
【0016】以下、実施例に基づき、本発明を更に詳細
に説明する。特に断らない限り、部、%はそれぞれ質量
部、質量%を表す。Hereinafter, the present invention will be described in more detail with reference to Examples. Unless otherwise specified, parts and% represent parts by mass and% by mass, respectively.
【0017】[0017]
【実施例】(シリコーンゴム粒子の製造) 〔製造例1〕分子鎖両末端がヒドロキシル基で封鎖され
た粘度80mPa・secのジメチルポリシロキサン
(水酸基含有量1.3%)100部、粘度10mPa・
secの両末端ジメチルハイドロジェンシロキシ基封鎖
のメチルハイドロジェンポリシロキサン(ケイ素原子結
合水素原子の含有量1.5%)10部、及びジブチル錫
ジラウレート0.5部の混合物を速やかにスタチックミ
キサーで均一に混合した。次に、これをコロイドミルに
移し替え、同時にドデシルベンゼンスルホン酸ソーダの
20%水溶液5部とイオン交換水600部を加えて、1
400回転/分、間隔0.1mm条件下でミルし、シリ
コーン組成物の水分散液を得た。この分散液をスプレー
を使用して温度300℃の空気中に吐出量3L/Hrで
噴霧し、噴霧状態で硬化を完結させシリコーンゴム粒子
を得た。このシリコーンゴム粒子10部を200部のイ
オン交換水に分散・撹拌させ、固液分離する操作を3回
繰り返し、表面の界面活性剤を洗浄除去した。最後にウ
ェットケーキをイオン交換水にコロイドミルで再分散さ
せ、スプレー乾燥して精製シリコーンゴム粒子を得た。EXAMPLES (Production of Silicone Rubber Particles) [Production Example 1] 100 parts of dimethylpolysiloxane (having a hydroxyl group content of 1.3%) having a viscosity of 80 mPa · sec and both ends of a molecular chain blocked with a hydroxyl group, and a viscosity of 10 mPa · sec.
A mixture of 10 parts of methyl hydrogen polysiloxane (1.5% silicon-bonded hydrogen atom content) having both ends dimethylhydrogensiloxy group-blocked and 0.5 part of dibutyltin dilaurate is immediately mixed with a static mixer. Mix evenly. Next, this was transferred to a colloid mill, and at the same time, 5 parts of a 20% aqueous solution of sodium dodecylbenzenesulfonate and 600 parts of ion-exchanged water were added to add 1 part.
Milling was performed under the conditions of 400 rotations / minute and an interval of 0.1 mm to obtain an aqueous dispersion of the silicone composition. This dispersion was sprayed into the air at a temperature of 300 ° C. using a spray at a discharge rate of 3 L / Hr, and curing was completed in the spray state to obtain silicone rubber particles. The operation of dispersing and stirring 10 parts of the silicone rubber particles in 200 parts of ion-exchanged water and performing solid-liquid separation was repeated three times to wash and remove the surfactant on the surface. Finally, the wet cake was redispersed in ion-exchanged water using a colloid mill and spray-dried to obtain purified silicone rubber particles.
【0018】〔製造例2〕製造例1で分子鎖両末端がヒ
ドロキシル基で封鎖された粘度80mPa・secのジ
メチルポリシロキサン(水酸基含有量1.3%)を95
部にし、γーグリシドキシトリメトキシシランを5部使
用した以外は、製造例1と同様にしてエポキシ変性の精
製シリコーンゴム粒子を得た。[Preparation Example 2] In Preparation Example 1, 95 dimethylpolysiloxane (having a hydroxyl group content of 1.3%) having a viscosity of 80 mPa · sec and having both molecular chain terminals blocked with hydroxyl groups was used.
, And epoxy-modified purified silicone rubber particles were obtained in the same manner as in Production Example 1 except that 5 parts of γ-glycidoxytrimethoxysilane were used.
【0019】〔製造例3〕製造例1でシリコーン組成物
の水分散液を作る際の界面活性剤を、ポリオキシエチレ
ンノニルフェニルエーテル(HLB15)1部に変え、
精製操作はおこなわない以外は、製造例1と同様にして
シリコーンゴム粒子を得た。[Production Example 3] The surfactant used in preparing the aqueous dispersion of the silicone composition in Production Example 1 was changed to 1 part of polyoxyethylene nonylphenyl ether (HLB15).
Silicone rubber particles were obtained in the same manner as in Production Example 1 except that the purification operation was not performed.
【0020】〔製造例4〕製造例2でシリコーン組成物
の水分散液を作る際の界面活性剤を、ポリオキシエチレ
ンノニルフェニルエーテル(HLB15)1部に変え
た。精製はシリコーンゴム10部に対してトルエン20
0部加え、室温で60分撹拌した後、濾過する操作を3
回繰り返した。3回目の濾液をエバポレーターで濃縮
し、もはや抽出物がないことを確認した。その後ウェッ
トケーキをもみほぐしながら80℃で1時間熱風乾燥し
て、界面活性剤と未反応ポリシロキサンの両方を精製し
たシリコーンゴム粒子を得た。[Preparation Example 4] The surfactant used in preparing a water dispersion of the silicone composition in Preparation Example 2 was changed to 1 part of polyoxyethylene nonylphenyl ether (HLB15). Purification is performed by adding toluene 20 to 10 parts of silicone rubber.
Add 0 parts, stir at room temperature for 60 minutes, and perform filtration 3 times.
Repeated times. The third filtrate was concentrated by an evaporator, and it was confirmed that there was no more extract. Thereafter, the wet cake was dried with hot air at 80 ° C. for 1 hour while being crushed to obtain silicone rubber particles in which both the surfactant and the unreacted polysiloxane were purified.
【0021】〔製造例5〕製造例1でイオン交換水によ
る洗浄回数を1回にした以外は、製造例1と同様にして
シリコーンゴム粒子を得た。[Production Example 5] Silicone rubber particles were obtained in the same manner as in Production Example 1 except that the number of times of washing with ion-exchanged water was one in Production Example 1.
【0022】(金属ベース回路基板の製造) 〔実施例1〕エポキシ樹脂としてビスフェノールF型エ
ポキシ樹脂(エピコート807、油化シェルエポキシ株
式会社製)100部、製造例1で製造した精製シリコー
ンゴム粒子60部、シランカップリング剤としてγ−グ
リシドキシプロピルメチルジエトキシシラン(AZ−6
165:日本ユニカー株式会社製)5部、無機フィラー
として平均粒径5μmのアルミナ(AS−50:昭和電
工株式会社製)500部を、万能混合攪拌機で混合し、
更に三本ロールで混練りした。これに硬化剤としてジア
ミノジフェニルメタンを27部添加して絶縁接着剤を作
成した。上記混合物を厚さ2.0mmのアルミニウム板
上に硬化後の絶縁接着層の厚みが100μmになるよう
に塗布し、Bステージ状態に予備硬化させ、ラミネータ
ーで厚さ70μmの電解銅箔を張り合わせ、その後80
℃×2hrs+150℃×3hrsアフターキュアを行
い絶縁接着層付き銅箔基板を作製し、更に、銅箔をエッ
チングしてパッド部を有する所望の回路を形成して、金
属ベース回路基板とした。また、前記樹脂組成物を80
℃×2hrs+150℃×3hrs硬化させて、厚さ約
100μm幅約3mm長さ約50mmの硬化体の試験片
を別途作製し、貯蔵弾性率の測定に供した。(Production of Metal-Based Circuit Board) Example 1 100 parts of bisphenol F type epoxy resin (Epicoat 807, manufactured by Yuka Shell Epoxy Co., Ltd.) as an epoxy resin, and purified silicone rubber particles 60 produced in Production Example 1 Part, γ-glycidoxypropylmethyldiethoxysilane (AZ-6) as a silane coupling agent
165: 5 parts of Nippon Unicar Co., Ltd.) and 500 parts of alumina (AS-50: Showa Denko KK) having an average particle size of 5 μm as an inorganic filler were mixed with a universal mixing stirrer.
The mixture was further kneaded with three rolls. To this, 27 parts of diaminodiphenylmethane was added as a curing agent to prepare an insulating adhesive. The above mixture was applied on a 2.0 mm-thick aluminum plate so that the thickness of the insulating adhesive layer after curing became 100 μm, and was preliminarily cured in a B-stage state, and a 70 μm-thick electrolytic copper foil was laminated with a laminator, Then 80
C. × 2 hrs + 150 ° C. × 3 hrs after-curing to prepare a copper foil substrate with an insulating adhesive layer, and further, etching the copper foil to form a desired circuit having a pad portion, thereby obtaining a metal base circuit substrate. Further, the resin composition is
C. × 2 hrs + 150 ° C. × 3 hrs, a test piece of a cured body having a thickness of about 100 μm, a width of about 3 mm, and a length of about 50 mm was separately prepared and subjected to measurement of storage modulus.
【0023】〔実施例2〜4〕実施例1でシリコーンゴ
ム粒子をそれぞれ製造例2〜4のものに変更した以外
は、実施例1と同様にして金属ベース回路基板を作成し
た。[Examples 2 to 4] Metal-based circuit boards were prepared in the same manner as in Example 1 except that the silicone rubber particles were changed to those of Production Examples 2 to 4, respectively.
【0024】〔比較例1〕実施例1でシリコーンゴムを
製造例5のものに変更した以外は、実施例1と同様にし
て金属ベース回路基板を作成した。Comparative Example 1 A metal-based circuit board was prepared in the same manner as in Example 1, except that the silicone rubber in Example 1 was changed to that of Production Example 5.
【0025】〔比較例2〕実施例1でシリコーンゴム粒
子を抜いた以外は、実施例1と同様にして金属ベース回
路基板を作成した。Comparative Example 2 A metal-based circuit board was prepared in the same manner as in Example 1 except that the silicone rubber particles were removed.
【0026】(シリコーンゴムの特性評価)製造例1〜
5で製造したシリコーンゴム粒子の特性について、電気
伝導度と平均粒子径について評価し、その結果を表1に
示した。電気伝導度はシリコーンゴム粒子10gを蒸留
水40g(蒸留水の電気伝導度1〜2μS/cm)の中
に分散させ煮沸させながら30分撹拌した後冷却し、そ
の抽出水の電気伝導度を測定した。平均粒子径は貯蔵弾
性率測定用の硬化体試験片の断面を走査型電子顕微鏡で
観察した結果から平均値を求めた。(Evaluation of Characteristics of Silicone Rubber) Production Example 1
With regard to the characteristics of the silicone rubber particles produced in Example 5, the electrical conductivity and the average particle size were evaluated. The results are shown in Table 1. The electric conductivity was measured by dispersing 10 g of silicone rubber particles in 40 g of distilled water (electric conductivity of distilled water: 1 to 2 μS / cm), stirring for 30 minutes while boiling, cooling, and measuring the electric conductivity of the extracted water. did. The average particle diameter was determined from the result of observing a cross section of a cured body test piece for measuring storage elastic modulus with a scanning electron microscope.
【0027】(貯蔵弾性率の測定)上記のそれぞれの硬
化体については、動的粘弾性測定器(レオメトリックス
社製;RSA2)を用い、周波数11Hz、昇温速度1
0℃/分の条件下、−50℃〜+150℃の温度範囲で
貯蔵弾性率を測定した。表1に300Kでの貯蔵弾性率
測定結果を示した。(Measurement of Storage Elastic Modulus) For each of the above cured products, a dynamic viscoelasticity meter (RSA2 manufactured by Rheometrics Co., Ltd.) was used at a frequency of 11 Hz and a heating rate of 1
The storage modulus was measured in the temperature range of -50 ° C to + 150 ° C under the condition of 0 ° C / min. Table 1 shows the results of storage modulus measurement at 300K.
【0028】(金属基板の特性評価)金属ベ−ス基板に
ついて銅箔ピール強度、耐電圧および絶縁抵抗(表面抵
抗)と、金属ベース回路基板についてヒ−トサイクル試
験を次に示す条件で測定し、その測定結果も表1に示し
た。(Evaluation of Characteristics of Metal Substrate) Copper foil peel strength, withstand voltage and insulation resistance (surface resistance) of a metal base substrate and a heat cycle test of a metal base circuit substrate were measured under the following conditions. The measurement results are also shown in Table 1.
【0029】<銅箔ピール強度の測定>作製後1週間経
過した金属ベース基板について、テンシロン(オリエン
テック社製;型式UCT−1T)を用い、1cm幅で9
0°の方向に室温で50mm/分の速度で剥離した時の
強度を求めた。<Measurement of Peel Strength of Copper Foil> The metal base substrate one week after the production was measured using a Tensilon (manufactured by Orientec; model UCT-1T) with a width of 1 cm and a width of 9 cm.
The strength when peeled at a rate of 50 mm / min at room temperature in the direction of 0 ° was determined.
【0030】<耐電圧の測定>温度121℃、相対湿度
100%、気圧2026hPaのプレッシャークッカー
テスターにて96時間処理後と処理前の試験片を絶縁油
中に浸漬し、室温で銅箔とアルミニウム板間に交流電圧
を印加し、絶縁破壊する電圧を測定した。初期印加電圧
は0.5kVであり、各電圧で30秒間保持した後、
0.5kVずつ段階的に昇圧する方法で電圧を印加し
た。<Measurement of Withstanding Voltage> Test pieces after and before treatment in a pressure cooker tester at a temperature of 121 ° C., a relative humidity of 100% and a pressure of 2026 hPa for 96 hours and before the treatment were immersed in insulating oil. An AC voltage was applied between the plates, and the voltage at which dielectric breakdown occurred was measured. The initial applied voltage is 0.5 kV. After holding at each voltage for 30 seconds,
A voltage was applied by a method of stepwise increasing the voltage by 0.5 kV.
【0031】<ヒ−トサイクル試験方法>パッド間にチ
ップサイズ2.0mm×1.25mmのチップ抵抗を半
田付けし、−40℃7分〜+125℃7分を1サイクル
として500回のヒートサイクル試験を行なった後、顕
微鏡で半田部分のクラックの有無を観察した。半田部分
のクラックの発生が10%以上あるものは不良とし、半
田クラックの発生が10%未満のものを良好と判定し
た。<Heat Cycle Test Method> A chip resistor having a chip size of 2.0 mm × 1.25 mm was soldered between pads, and 500 cycles of heat cycle were performed at -40 ° C. for 7 minutes to + 125 ° C. for 7 minutes. After the test, the presence or absence of cracks in the solder portion was observed with a microscope. If the occurrence of cracks in the solder portion was 10% or more, it was determined to be defective, and if the occurrence of solder cracks was less than 10%, it was determined to be good.
【0032】[0032]
【表1】 [Table 1]
【0033】[0033]
【発明の効果】本発明によって、放熱性、チップ部品の
実装信頼性に優れるとともに、耐湿性、耐熱性、絶縁信
頼性にも優れる金属ベース回路基板を提供することがで
きる。According to the present invention, it is possible to provide a metal-based circuit board which is excellent in heat dissipation, chip component mounting reliability, and also excellent in moisture resistance, heat resistance and insulation reliability.
───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5E315 AA03 BB01 BB02 BB03 BB04 BB09 BB14 BB15 BB18 GG01 GG03 GG05 GG09 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5E315 AA03 BB01 BB02 BB03 BB04 BB09 BB14 BB15 BB18 GG01 GG03 GG05 GG09
Claims (5)
層を介して導電性金属箔が張り合わせてなる金属ベース
回路基板において、前記絶縁接着層がエポキシ樹脂を主
体とする樹脂、硬化剤化合物、ゴム粒子及び無機充填剤
を含み、該ゴム粒子の煮沸抽出水の電気伝導度が200
μS/cm以下であることを特徴とする金属ベース回路
基板。1. A metal base circuit board in which a conductive metal foil is bonded to at least one main surface of a metal plate via an insulating adhesive layer, wherein the insulating adhesive layer is made of a resin mainly composed of an epoxy resin and a curing agent. A compound, rubber particles and an inorganic filler, wherein the electrical conductivity of the boiling extraction water of the rubber particles is 200
A metal-based circuit board having a μS / cm or less.
特徴とする請求項1記載の金属ベース回路基板。2. The metal-based circuit board according to claim 1, wherein the rubber particles are epoxy-modified.
ことを特徴とする請求項1または請求項2記載の金属ベ
ース回路基板。3. The metal-based circuit board according to claim 1, wherein the rubber particles have an average particle size of 5 to 20 μm.
該粒子中の未反応ポリシロキサンが精製されていること
を特徴とする請求項1〜3記載の金属ベース回路基板。4. The rubber particles are silicone rubber particles,
4. The metal-based circuit board according to claim 1, wherein unreacted polysiloxane in said particles is purified.
000MPa以下であることを特徴とする請求項1〜4
記載の金属ベース回路基板。5. The storage elastic modulus of the insulating adhesive layer is 15 at 300K.
4,000 MPa or less.
A metal-based circuit board as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000253561A JP4187062B2 (en) | 2000-08-24 | 2000-08-24 | Metal base circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000253561A JP4187062B2 (en) | 2000-08-24 | 2000-08-24 | Metal base circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002076549A true JP2002076549A (en) | 2002-03-15 |
| JP4187062B2 JP4187062B2 (en) | 2008-11-26 |
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ID=18742636
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000253561A Expired - Fee Related JP4187062B2 (en) | 2000-08-24 | 2000-08-24 | Metal base circuit board |
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| Country | Link |
|---|---|
| JP (1) | JP4187062B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100421239C (en) * | 2003-12-16 | 2008-09-24 | 富士高分子工业株式会社 | Thermally Conductive Composite Sheet |
| US7626124B2 (en) | 2005-05-13 | 2009-12-01 | Fuji Electric Holdings Co., Ltd. | Wiring board |
| KR102158938B1 (en) * | 2019-09-18 | 2020-09-23 | (주) 매그나텍 | Epoxy resin composition and heat dissipation circuit board using the same |
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| JPH09208709A (en) * | 1995-11-30 | 1997-08-12 | Toray Dow Corning Silicone Co Ltd | Composite cured silicone powder and production thereof |
| JPH1067861A (en) * | 1996-08-28 | 1998-03-10 | Toray Dow Corning Silicone Co Ltd | Cured silicone powder and its production |
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| JPS6399221A (en) * | 1987-08-20 | 1988-04-30 | Sumitomo Bakelite Co Ltd | Production of epoxy resin composition for sealing semiconductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100421239C (en) * | 2003-12-16 | 2008-09-24 | 富士高分子工业株式会社 | Thermally Conductive Composite Sheet |
| US7626124B2 (en) | 2005-05-13 | 2009-12-01 | Fuji Electric Holdings Co., Ltd. | Wiring board |
| US20100041228A1 (en) * | 2005-05-13 | 2010-02-18 | Fuji Electric Holdings Co., Ltd. | Method of manufacturing a wiring board |
| US8336202B2 (en) * | 2005-05-13 | 2012-12-25 | Fuji Electric Co., Ltd. | Method of manufacturing a wiring board |
| DE102006019602B4 (en) * | 2005-05-13 | 2021-01-28 | Fuji Electric Co., Ltd. | Power semiconductor module |
| KR102158938B1 (en) * | 2019-09-18 | 2020-09-23 | (주) 매그나텍 | Epoxy resin composition and heat dissipation circuit board using the same |
| WO2021054527A1 (en) * | 2019-09-18 | 2021-03-25 | 주식회사 엘레판트 | Epoxy resin composition, and heat dissipation circuit board using same |
| US12415884B2 (en) | 2019-09-18 | 2025-09-16 | Magnatech Co., Ltd. | Epoxy resin composition and heat dissipation circuit board using same |
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|---|---|
| JP4187062B2 (en) | 2008-11-26 |
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