JP2001298012A - Semiconductor etching monitor and method of manufacturing semiconductor dynamic quantity sensor using the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to a physical quantity sensor made of a semiconductor material and a method of manufacturing the same.

[0002]

2. Description of the Related Art FIG. 8 shows a conventional embodiment of a method for manufacturing a semiconductor dynamic quantity sensor.

(A) An insulator layer 11 such as BPSG or PSG is formed on the upper surface of a substrate Si10 to generate polysilicon 12 to be a movable electrode and a fixed electrode. Also,
In some cases, an SOI wafer formed by bonding a substrate Si10, an insulator layer 11 of an oxide film, and an active layer Si12 is used.

(B) After patterning and etching a resist to form a detection structure 13 using polysilicon or an active layer Si, (c) an insulating layer 1 such as BPSG, PSG or an oxide film
1 is etched with a sacrificial layer using an etchant 20 such as BHF.

[0005] (d) Then, after replacement and washing with a liquid such as pure water or IPA (isopropyl alcohol),
A step of drying is performed.

[0006]

However, in the above-described method for manufacturing a physical quantity sensor, it is impossible to check the progress of the etching in-line in the sacrificial layer etching step. It was done exclusively by time. For this reason, the following problems have occurred, which has been a factor of reducing the non-defective product rate of the sensor.

[0008] That is, when the sacrificial layer etching time is insufficient, as shown in FIG.
Is not completely removed, and the detection structure 13 and the substrate Si10 remain in a state of being connected via the insulator layer 11. For this reason, the detection structure 13 has a problem that it cannot be deformed in accordance with a mechanical quantity input from the outside.

If the sacrifice layer etching time is too long, an over-etched region 14 is formed in the insulator layer 11 as shown in FIG. For this reason, when a mechanical quantity is input from the outside and the detection structure 13 is deformed, a portion where the tensile stress or the compressive stress is most concentrated is shifted from an ideal position, and the sensitivity of the sensor is reduced. Invitation occurs.

The present invention has been made to solve the above problems.

Accordingly, it is an object of the present invention to provide an etching amount detecting method capable of easily detecting the etching amount of sacrificial layer etching.

It is a further object of the present invention to provide a method of manufacturing a dynamic quantity sensor capable of easily detecting the etching amount of the sacrificial layer etching and controlling the etching amount.

[0012]

In order to solve the above problems, the present invention uses the following means.

In a first aspect of the present invention, a structure for monitoring semiconductor etching comprises a semiconductor substrate having a first layer and a second insulating layer and a third semiconductor layer formed on the semiconductor substrate.
A structure comprising a wafer having a layer structure and having a through hole formed by etching a third semiconductor layer and one through hole, wherein the distance between the through groove and the through hole is the same. The body includes a portion that becomes a movable portion by removing the second insulating layer by wet etching, and a fixed portion, and the portion that becomes the movable portion is formed by at least one or more beams. And is connected to

In a second aspect of the present invention, a semiconductor etching monitor structure comprises a first insulating substrate and a second insulating layer and a third semiconductor layer formed on a first semiconductor substrate.
A structure comprising a wafer having a layered structure, having a through groove formed by etching a third semiconductor layer and two or more through holes, wherein the distance between adjacent through holes is the same, The distance between the through-groove and the through-hole is the same as the distance between the through-holes, and the structure has a portion in which the second insulating layer is removed by wet etching to become a movable portion, and a fixed portion. And the portion serving as the movable portion is connected to the fixed portion by at least one or more beams.

[0015] In a third aspect of the present invention, the semiconductor etching monitor structure is a three-layer wafer, wherein the first layer is formed of Si and the second layer is formed by thermally oxidizing the third layer. _{According to 2} , a SOI (Silicon On Insulator) wafer in which the third layer is made of Si is used.

In a fourth aspect of the present invention, in the semiconductor etching monitor structure, in a wafer having a three-layer structure, a first layer is made of Si, a second layer is made of a PSG film, and BPSG is formed.
The third layer is made of polycrystalline Si, and is selected from the group consisting of a film and another silicon oxide film.

In a fifth aspect of the present invention, in the semiconductor etching monitoring structure, the upper surface of the beam has a material film having a different thermal expansion coefficient from that of the third semiconductor layer or an internal stress. Characterized in that a laminated film is laminated.

In a sixth aspect of the present invention, in the structure for monitoring semiconductor etching, the material film is made of SiN.

In a seventh aspect of the present invention, the structure for monitoring a semiconductor etching is supported by connecting the movable portion to the fixed portion by at least one beam. It has a cantilever structure.

In the eighth aspect of the present invention, the structure for monitoring a semiconductor etching is supported by connecting a portion serving as the movable portion to the fixed portion by at least two or more beams. It has a doubly supported structure.

In a ninth aspect of the present invention, a semiconductor etching monitor is characterized in that at least one or more of the semiconductor etching monitoring structures is arranged on the same surface of a wafer.

In a tenth aspect of the present invention, in a semiconductor etching monitor having two or more semiconductor etching monitoring structures, a distance between a through groove and a through hole in one etching monitoring structure is different from that of another etching monitoring structure. The distance between the through groove and the through hole in the structure is different.

According to an eleventh aspect of the present invention, a three-layer wafer for manufacturing a semiconductor sensor is characterized in that the semiconductor etching monitor and the sensor part are provided on the same surface of the wafer.

[0024] In a twelfth aspect of the present invention, in the method for detecting an etching amount, the movable portion formed by removing the second insulating layer by wet etching in the semiconductor etching monitor includes the second layer. It is determined that the amount of the wet etching is determined by detecting detachment from the surface of the insulator and deformation to the first layer side due to the surface tension of the etchant or fixation to the first layer. Features.

[0025] In a thirteenth aspect of the present invention, in the method of detecting an etching amount, a material film having a different coefficient of thermal expansion or a film having an internal stress from the third semiconductor layer is provided on the upper surface of the beam. In the laminated semiconductor etching monitor, the movable portion formed by removing the second insulating layer by wet etching is separated from the insulating surface of the second layer, and the film of the material film is removed. The amount of the wet etching is determined by detecting deformation to the first layer side due to stress or deformation in the direction opposite to the first layer side.

In a fourteenth aspect of the present invention, a method of manufacturing a semiconductor physical quantity sensor includes forming a semiconductor physical quantity sensor portion and an etching monitor capable of detecting a wet etching amount on the same wafer. A proper wet etching of the sensor portion can be achieved.

In a fifteenth aspect of the present invention, a method for manufacturing a semiconductor physical quantity sensor uses the etching monitor.

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION As used herein, the term "etching monitor" refers to an apparatus capable of checking the progress of sacrificial layer etching in-line.

As used herein, the term "structure for etching monitoring" refers to a structure for in-line checking the progress of etching of the sacrificial layer.

As used herein, the term “cantilever structure” means that a movable portion has at least one connection portion (beam) between a movable portion and a fixed portion located around the movable portion. It refers to a structure in which the connection portions are on the same side. Specifically, the structures shown in FIGS. 1A and 4A correspond to, but are not limited to, the structures shown in FIGS.

As used herein, the “double-supported beam structure” means that a movable portion has at least two or more connection portions (beams) between a movable portion and a fixed portion located around the movable portion. It refers to a structure in which the connection portion exists on the opposite side. Specifically, the structures of FIG. 4B and FIG. 4C correspond to this.
It is not limited to these.

As used herein, the term “swastika structure”
The term “movable part” refers to a structure in which at least four or more connection parts (beams) are provided between a movable part and a fixed part located around the movable part, and at least one or more beams are present on each side. . Specifically, the structure shown in FIG. 4D corresponds, but is not limited thereto.

The following effects are obtained by using the means of the present invention.

First, when performing wet etching of the second layer of the three-layer structure wafer, the movable portion of the etching monitor formed in the third layer is moved to the first layer side by the surface tension of the etching solution. By deforming the structure, it is possible to provide a structure for detecting the etching amount of the wet etching.

Second, it is necessary to check the progress of the wet etching in-line, to accurately grasp the etching amount of the wet etching, and to easily calculate the etching rate of the wet etching. A possible etch monitor can be provided.

Third, it is possible to provide a structure for detecting an etching amount in wet etching of an insulator layer in an SOI wafer.

Fourth, the first layer is made of Si and the second layer is made of P
The structure for detecting the etching amount of the wet etching of the PSG film, the BPSG film or the silicon oxide film in the wafer in which the third layer is made of polycrystalline Si by the SG film or the BPSG film or another silicon oxide film. Can be provided.

Fifth, the planar shape of the etching monitor is
The degree of freedom can be provided. Further, the mechanical rigidity of the beam can be given a degree of freedom. Further, the degree of freedom and the shape of the deformation of the movable portion and the amount of deformation can be given.

Sixth, a structure for controlling the direction of deformation of the movable portion can be provided.

Seventh, it is possible to provide a three-layer structure wafer having a semiconductor sensor portion and an etching monitor, and to provide a method for detecting an etching amount of wet etching using the wafer.

Eighth, a three-layer structure wafer having a semiconductor sensor portion and an etching monitor is provided, and the direction of deformation of the movable portion in the etching monitor is controlled by using the wafer. And a method for detecting an etching amount of the wet etching.

Ninth, in the three-layer structure wafer, when performing wet etching of the second insulator layer, a dynamic quantity sensor capable of achieving an appropriate etching quantity by monitoring the etching quantity. Can be provided.

[0043]

EXAMPLE 1 As a first example, a basic pattern of an etching monitor structure manufactured by using the present invention is shown in FIG. 1 and FIG. 2 shows a function of an etching monitor (a method of detecting an etching amount). ). FIG. 1A is a top view, and FIG.
It is sectional drawing about line AA 'in (a).

In FIG. 1, the etching monitor structure comprises a substrate Si as a semiconductor substrate 120, an SiO ₂ layer as an insulator layer 110 as a sacrificial layer, and a Si layer as a semiconductor layer 100. The layer 100 has a through groove 1
03 and the through-hole 104 are formed such that the interval between them is d.

The method of detecting the amount of etching will be described below with reference to FIG.

(A) An SOI wafer composed of Si as the semiconductor substrate 120, a SiO ₂ layer as the insulator layer 110, and a Si layer as the semiconductor layer 100 is prepared.

(B) Patterning is performed with the resist 109, and the semiconductor layer 100 is subjected to wet etching with a mixed solution of HF + HNO ₃ or dry etching with a mixed gas of SF ₆ + O ₂ , whereby the beam 102
(FIG. 1), a through groove 103 and a through hole 104 are formed.

(C) The sacrifice layer is etched using an etchant 200 such as HF to remove the insulator layer 110, thereby forming the movable portion 101. Movable part 1
Numeral 01 is supported by connecting to a fixed portion 105 (FIG. 1) by a beam 102. The insulator layer 110 on the lower surface of the movable portion 101 has been completely removed, and thus the movable portion 101 has a structure that can freely move.

(D) Pure water or IPA
And then dried. At this time,
A surface tension 300 is generated in a liquid such as IPA.

(E) If the portion of the insulating layer 110 facing the lower surface of the movable portion 101 has been completely removed by the sacrificial layer etching, the movable portion 101 is removed from the semiconductor substrate 120 under the influence of the surface tension 300. (Sticking).

That is, when this sticking occurs, the portion of the insulator layer 1 facing the lower surface of the movable portion 101
It can be said that 10 was completely removed, in other words, the etching amount of the sacrificial layer etching> d.

In this embodiment, the etching monitor is shown in FIG.
It is desirable to provide a plurality of pattern groups in which the distance d is variously changed as shown in FIG.

In FIG. 3, four patterns (a),
(B), (c), and (d) are prepared. (A) is d1
= 5.0 μm, (b) d2 = 4.5 μm, (c) d
3 = 4.0 μm, and (d) shows a pattern with d4 = 3.5 μm. It is more convenient to display this value as an etching amount specification pattern as shown by 106 in FIG.

Using a wafer on which the pattern group is arranged,
It is assumed that sacrificial layer etching has been performed by the above-described manufacturing method. Here, if sticking is confirmed in the patterns (c) and (d) and sticking is not confirmed in the patterns (a) and (b), the etching amount of the sacrificial layer etching is from 4.0 μm to 4 μm. It can be determined that the distance is between 0.5 μm and the etching amount can be grasped more accurately. In this embodiment, the interval d is set to 0.5 μm steps. However, if the step amount is changed as necessary, the detection resolution of the etching amount can be changed.

Further, the basic pattern of the etching monitor used in this embodiment may have a pattern shape as shown in FIG. The pattern shape will be described below.

(A) A so-called cantilever structure in which two beams 102a and 102b are formed on one side of the movable portion 101a and are connected to and supported by the semiconductor layer 100 by the beams. When the dimensions of the main parts are the same as those of the structure of FIG. 1, it is possible to increase the mechanical rigidity as compared with the structure of FIG.

(B) Two beams 102c and 102d are formed on two opposing sides of the movable portion 101b, and are connected to and supported by the semiconductor layer 100 by the beams. When the dimensions of the main parts are the same as those of the structure of FIG. 1, it is possible to increase the mechanical rigidity as compared with the structure of FIG.

(C) Four beams 102e, 102f, 10
A so-called doubly supported structure in which 2g and 102h are formed on two opposing sides of the movable portion 101c and are connected to and supported by the semiconductor layer 100 by the beams. When the dimensions of the main parts are the same as the structure of (b), the (b)
It is possible to make the mechanical rigidity higher than the structure of the above.

(D) Four beams 102i, 102j, 10
2k, 102l are formed on each side of the movable portion 101d, and the beam has an L-shape in plan view, and is connected to and supported by the semiconductor layer 100 by the beam. . When the dimensions of the main parts are the same as those of the structure of FIG. 1, the mechanical rigidity can be lower than that of the structure of FIG.

Embodiment 2 As a second embodiment, a basic pattern of an etching monitor structure manufactured by using the present invention is shown in FIG. 5 and FIG. 6 shows a function of the etching monitor (a method of detecting an etching amount). Is shown. FIG. 5A is a top view, and FIG.
It is sectional drawing of line BB 'in (a).

In FIG. 5, the etching monitor structure includes a substrate Si as a semiconductor substrate 120 and a semiconductor layer 10.
The insulator layer 110 serving as a sacrificial layer between the
There are SiO ₂ layer where it is, in the semiconductor layer 100, through groove 103, and through holes 104 are formed so that each interval becomes as d. Furthermore, beam 1
An SiN film 130 is laminated and patterned on the upper surface of the substrate 02.

Hereinafter, a method for detecting the etching amount will be described with reference to FIG.

(A) A SOI wafer is formed by using a substrate Si as the semiconductor substrate 120, a Si layer as the semiconductor layer 100, and
It is composed of a SiO ₂ layer as the insulator layer 110.

(B) SiN film 1 on top of semiconductor layer 100
30 and the SiN film 130 is finally
(FIG. 5) The resist 109 is formed so as to be formed only on the upper surface.
a is patterned and processed by etching.

(C) The resist 109b is patterned and wet-etched with a mixed solution of HF and HNO ₃ ,
Alternatively, the semiconductor layer 100 is subjected to dry etching using a mixed gas of SF _{6 and} O ₂ , thereby forming the beam 102, the through groove 103, and the through hole 104.

(D) The sacrifice layer is etched using an etchant 200 such as HF to remove the insulator layer 110, thereby forming the movable portion 101. Movable part 1
Numeral 01 is supported by connecting to a fixed portion 105 (FIG. 5) by a beam 102. The insulator layer 110 on the lower surface of the movable portion 101 has been completely removed, and thus the movable portion 101 has a structure that can freely move.

(E) Pure water or IPA
And then dried. At this time,
A surface tension 300 is generated in a liquid such as IPA. At the same time, a tensile stress 301 is generated in the SiN film 130 due to a difference in thermal expansion coefficient between the SiN film 130 and the semiconductor layer 100 or due to a tensile internal stress of the SiN film 130, and the movable portion 101 caused by the tensile stress 301 is generated. Mechanical stress 302 is generated to lift the upper surface to the upper surface.

(F) When the portion of the insulator layer 110 facing the lower surface of the movable portion 101 has been completely removed by the sacrificial layer etching, (mechanical stress 302+
If the spring force of the beam 102) <the surface tension 300, the movable portion 101 sticks to the substrate Si120. However, the design should be such that (mechanical stress 302 + spring force of the beam 102) ≧ surface tension 300. Thus, it is possible to prevent the movable portion 101 from sticking to the substrate Si120,
Further, when the liquid having generated the surface tension 300 is completely dried, the surface tension 300 disappears, so that the movable portion 101 is deformed in the opposite direction to the substrate Si120 by the mechanical stress 302.

That is, when the above-described deformation occurs,
It can be said that the portion of the insulator layer 110 facing the lower surface of the movable portion 101 has been completely removed. In other words, it can be seen that the etching amount of the sacrificial layer etching> d.

Embodiment 3 As a third embodiment, an acceleration sensor manufactured by using the present invention is shown in FIG.

Insulator layer 1 serving as a sacrificial layer between substrate Si as semiconductor substrate 120 and Si layer as semiconductor layer 100
10 there is a SiO ₂ layer and the semiconductor layer 100
The sensor includes a sensor 502, an etching monitor 501 in which monitor structures having variously changed intervals d (d1 to d4) are arranged, and a sensor described in the first embodiment.

In the sensor 502, the sensor through-groove 403 and the sensor through-hole 404 are formed so that the distance between them is d3.
01a and 401b are formed. Further, the insulator layer 110 on the lower surface of the sensor movable portions 401a and 401b
Has been removed.

Further, the sensor movable parts 401a, 401b
Are connected to the fixed portion 105 by six beams 402, and the sensor movable portions 401a and 401b are connected to each other by two beams 405, and the sensor movable portion 401 is supported by these eight beams. Have been.

As described above, the structure is such that the sensor movable portions 401a and 401b can move according to the acceleration.

A sacrifice layer is etched by the manufacturing method described in the first embodiment using a wafer having the semiconductor etching monitor and sensor portions on the same surface. Here, in order to completely remove the insulator layer 110 on the lower surfaces of the sensor movable parts 401a and 402b, the most ideal etching amount is d3.

Further, in the etching monitor 501, the pattern (c) for detecting the etching amount of d3 causes sticking, and the pattern (b) terminates the etching of the sacrificial layer when sticking does not occur. Then, the insulator layer 110 on the lower surfaces of the sensor movable portions 401a and 402b is completely removed, and the sacrifice layer etching in which the excessive etching is avoided can be performed.

In this embodiment, the monitoring structure of the first embodiment is used. However, even if the monitoring structure of the second embodiment is used, ideal etching of the sensor portion can be achieved similarly.

Although the invention has been described with reference to specific embodiments, the details of these embodiments should not be construed as limiting. It is to be understood that various equivalents, changes and modifications are possible without departing from the spirit and scope of the invention, and that such equivalent embodiments are a part of the invention.

Further, the present invention is not limited to an acceleration sensor, but may be applied to a physical quantity sensor such as a pressure sensor or an angular acceleration sensor, a structure involving deformation, or a structure separated from a substrate by a minute space. It is effective for realizing a semiconductor device to be used.

[0080]

The effects of the present invention are as follows.

1) Insufficient or excessive etching, which is a problem at the time of etching the sacrificial layer, can be prevented, and the progress of the etching of the sacrificial layer can be checked in-line.

2) Since a complicated process for preventing insufficient etching or preventing excessive etching is not required, a sensor using a semiconductor structure can be manufactured at low cost.

[Brief description of the drawings]

FIGS. 1A and 1B are diagrams showing a basic pattern of an etching monitor structure according to a first embodiment of the present invention, wherein FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line AA ′.

FIGS. 2A to 2E are cross-sectional views illustrating a principle of detecting an etching amount of an etching monitor according to a first embodiment of the present invention, and FIGS.

FIGS. 3A to 3D are plan views showing examples of an etching monitor in which pattern groups having various intervals d (d1 to d4) are arranged.

FIGS. 4A and 4B are plan views showing an application example of a basic pattern of an etching monitor. FIGS.

FIG. 5 is a plan view and a sectional view of a basic pattern of an etching monitor structure according to a second embodiment of the present invention;
(A) is a plan view, and (b) is a cross-sectional view taken along line BB '.

FIGS. 6A to 6F are cross-sectional views illustrating the principle of detecting an etching amount of an etching monitor according to a second embodiment of the present invention, and FIGS.

7A and 7B are a plan view and a sectional view of an etching monitor and a sensor according to a third embodiment of the present invention, wherein FIG. 7A is a plan view and FIG. 7B is a sectional view taken along line CC ′.

8A and 8B are a cross-sectional view illustrating a method of manufacturing a conventional physical quantity sensor and a result of etching, and a plan view of the conventional physical quantity sensor.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 semiconductor layer 101 movable part 102 beam 103 through groove 104 through hole 105 fixing part 106 etching amount specification pattern 109 resist 110 insulator layer 120 semiconductor substrate 130 SiN film 200 etchant 300 surface tension 301 tensile stress 302 mechanical stress 401 sensor movable Part 402 Sensor beam 403 Sensor penetration groove 404 Sensor penetration hole 405 Sensor beam 501 Etching monitor 502 Sensor 10 Substrate Si 11 Insulator layer 12 Polysilicon or active layer Si 13 Detection structure 14 Excessive etching area 20 Etch

Continuation of the front page (72) Inventor Mitsuo Sasaki 1-1, Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa F-term in Fuji Electric Co., Ltd. (reference) 4M112 AA02 CA24 CA26 DA04 EA02 EA06 5F043 AA31 BB22 FF02 GG10

Claims (15)

[Claims] 1. A wafer having a three-layer structure in which a second insulator layer and a third semiconductor layer are formed on a first semiconductor substrate, and etching the third semiconductor layer. Wherein the distance between the through-groove and the through-hole is the same, and in the structure, the second insulating layer is removed by wet etching. A structure for a semiconductor etching monitor, comprising: a movable portion; and a fixed portion, wherein the movable portion is connected to the fixed portion by at least one or more beams. 2. A wafer having a three-layer structure in which a second insulator layer and a third semiconductor layer are formed on a first semiconductor substrate, and etching the third semiconductor layer. Wherein the distance between adjacent through-holes is the same, and the distance between the through-groove and the through-hole is the same as the distance between the through-holes. The structure comprises a portion that becomes a movable portion by removing the second insulating layer by wet etching, and a fixed portion, and the portion that becomes the movable portion has at least one or more beams. A semiconductor etching monitor structure, wherein the structure is connected to the fixing portion. 3. A three-layer wafer, wherein the first layer is S
i, the second layer is formed by thermally oxidizing the third layer.
SOI (Sil) in which the third layer is made of Si by O ₂
3. The structure for monitoring a semiconductor etching according to claim 1, wherein a wafer is used. 4. A wafer having a three-layer structure, wherein the first layer is S
3. The method according to claim 1, wherein the second layer is selected from the group consisting of a PSG film, a BPSG film, and another silicon oxide film, and the third layer is made of a polycrystalline Si. 5. The structure for monitoring a semiconductor etching according to 4. 5. The film according to claim 3, wherein a material film having a different thermal expansion coefficient from that of the third semiconductor layer or a film having internal stress is laminated on the upper surface of the beam. 22. The structure for monitoring a semiconductor etching according to the above. 6. The structure according to claim 5, wherein the material film is made of SiN. 7. The apparatus according to claim 1, wherein the movable part has at least one part.
The structure for monitoring a semiconductor etching according to any one of claims 1 to 6, wherein the structure is a cantilever structure supported by being connected to the fixing portion by one or more beams. 8. The method according to claim 1, wherein the movable portion has at least two portions.
The semiconductor etching monitor structure according to any one of claims 1 to 6, wherein the structure is a doubly supported structure supported by being connected to the fixed portion by one or more beams. 9. A semiconductor etching monitor, wherein at least one or more semiconductor etching monitoring structures according to claim 1 are arranged on the same surface of a wafer. 10. A semiconductor etching monitor having two or more semiconductor etching monitoring structures, wherein the distance between the through groove and the through hole in one etching monitoring structure is different from that in the other etching monitoring structure. 10. The semiconductor etching monitor according to claim 9, wherein the distance is different from the hole distance. 11. A three-layer wafer for manufacturing a semiconductor sensor, comprising the semiconductor etching monitor and sensor part according to claim 9 on the same surface of the wafer. 12. In a semiconductor etching monitor, a movable portion formed by removing an insulating layer as a second layer by wet etching is deformed toward the first layer due to surface tension of an etching solution, or , First
An etching amount detection method, wherein the amount of the wet etching is determined by detecting sticking to the layer. 13. A semiconductor etching monitor in which a material film having a thermal expansion coefficient different from that of a third semiconductor layer or a film having internal stress is laminated on the upper surface of a beam, the insulation of the second layer is provided. The movable portion formed by removing the body layer by wet etching deforms to the first layer side due to the film stress of the material film, or deforms in the direction opposite to the first layer side. Detecting the amount of the wet etching to detect the amount of etching. 14. A method for manufacturing a semiconductor physical quantity sensor, comprising: forming an etching monitor capable of detecting a wet etching amount and a part for the semiconductor physical quantity sensor on the same wafer; A method for manufacturing a semiconductor dynamic quantity sensor, wherein wet etching can be achieved. 15. A method for manufacturing a semiconductor dynamic quantity sensor according to claim 14, wherein the etching monitor according to claim 9 or 10 is used.