JP2001060567A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) [Problem] To provide a method of manufacturing a semiconductor device in which the quality of a semiconductor chip is improved by suppressing generation of Al burrs on a chip side in a scribe process. A method of manufacturing a semiconductor device according to the present invention includes:
An Al pad 15 is formed on the scribe line 21, and the Al pad 15 is perpendicular to the scribe line 21.
Preparing a wafer having a width smaller than a cut width 24 by a dicing blade described later; and forming a plurality of semiconductor chips 22 and 23 by dicing the wafer using a dicing blade.
Performing TCP mounting on the semiconductor chip. Thereby, the occurrence of burrs of Al on the chip side during the scribe process can be suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device in which burrs of Al are suppressed on a chip side during a scribe step.

[0002]

2. Description of the Related Art FIG. 5 is a plan view showing a part of a wafer for explaining a conventional method of manufacturing a first semiconductor device. FIGS. 8A and 8B are cross-sectional views showing a state in which a TCP (tape carrier package) mounting process is performed on the semiconductor chip shown in FIG.

First, a wafer as shown in FIG. 5 is manufactured. This wafer has chip forming regions 22 and 23 where semiconductor chips are formed and scribe lines 21. The chip forming regions 22 and 23 are scribe lines 21
Are separated by Pads 27 and 28 are formed in the chip forming regions 22 and 23. A plurality of Al pads 51 are formed on the scribe line 21. A
The l-pad 51 is connected to a TEG (Test Elem) formed on the wafer.
This is a pad for contacting a measuring needle when an electrical test is performed on an entity group or the like.

Next, an Al pad 5 on such a wafer is used.
Then, an electrical test is performed using No. 1 and then a dicing process is performed on the wafer. That is, the wafer is cut along the scribe line 21 using the rotated dicing blade (blade). Thus, the semiconductor chips (IC chips) 22 and 23 are separated from the wafer. Note that the reason why the cut width 24 by the dicing blade is smaller than the width 21 of the scribe line is that the chip forming area 2 is formed even when the dicing blade is displaced on the scribe line during dicing.
This is so as not to cut the pieces 2 and 23.

[0005] Thereafter, the separated IC chips 22 and 23 are separated.
Is subjected to a TCP mounting process.

That is, as shown in FIG. 8A, first, a TAB (Tape Automated Bonding) tape is prepared. The TAB tape has a flexible tape 81, on which bonding leads (fingers) 82 are connected by an adhesive (not shown). The bonding lead 82 has an inner lead at its tip.

Next, as shown in FIG. 8B, the inner lead is positioned on the pad 27 of the IC chip 22, and the inner lead and the pad 27 are pressed and heated and pressed. Thus, the TCP mounting is performed.

In the first conventional method of manufacturing a semiconductor device, as shown in FIG. 5, the width of the Al pad 51 is about 60 μm, the cut width 24 by the dicing blade is about 30 μm, The width of 51 is wider than the cut width 24. Therefore, in the scribing step, the Al pad 51 is not completely cut, and a part of the Al pad 51 remains after the cutting, and as a result, burrs of Al occur on the chip side. The Al burrs are those remaining in a state in which Al pieces are raised near the outer periphery of the semiconductor chip 22 (chip side).
The burr of Al is not particularly problematic in normal wire bonding, but the TCP mounting and CS as shown in FIG.
This is a problem when a P (Chip Sized Package) or the like is manufactured.

That is, due to the recent miniaturization of the package, the distance between the IC chip 22 and the inner lead (finger 82) connecting it is only about several tens of μm. Therefore, when burrs of Al occur on the chip side, Al
The burrs and the fingers 82 come into contact with each other to cause a short circuit between the substrate and the fingers or a short circuit between the fingers, which causes a serious problem in quality and may cause the IC chip to be defective.

FIG. 6 is a plan view showing a part of a wafer for explaining a second conventional method of manufacturing a semiconductor device. The same parts as those in FIG. Will be described only.

First, a wafer as shown in FIG. 6 is manufactured. On the scribe line 21 of this wafer, a plurality of A
1 pad 61 is formed.
The l wiring 62 is connected.

Next, the Al pad 6 on such a wafer
Then, an electrical test is performed using No. 1 and then a dicing process is performed on the wafer.

In the second conventional method of manufacturing a semiconductor device, the material of the TEG wiring 62 connected to the Al pad 61 and formed on the scribe line is Al. The pad 61 is not completely cut, not only a part of the Al pad 61 remains after cutting, but also the Al wiring 62 is not completely cut,
After the cutting, part of the Al wiring 62 remains, and as a result, burrs of Al occur on the chip side. Therefore, the Al burrs and the fingers come into contact with each other, resulting in a large quality problem.
The IC chip may be defective.

FIG. 7 is a plan view for explaining a third conventional method of manufacturing a semiconductor device and is a plan view showing a part of a wafer. The same parts as those in FIG. Will be described only.

First, a wafer as shown in FIG. 7 is manufactured. A plurality of Al pads 72 are formed on the scribe line 21 of the wafer. The monitor element 71 is arranged between the Al pads 72, and the monitor element 71 is electrically connected to the Al pad 72. The monitor element 71 and the Al pad 72 constitute a TEG.

Next, the Al pad 5 on such a wafer
Then, an electrical test is performed using No. 1 and then a dicing process is performed on the wafer.

In the third conventional method of manufacturing a semiconductor device, since the width of the Al pad 51 is formed wider than the cut width 24, burrs of Al occur on the chip side. As a result, there is a major problem in quality.
The C chip may be defective.

[0018]

As described above, in the conventional method of manufacturing a semiconductor device, Al burrs occur on the chip side during scribing, and the Al burrs come into contact with the inner leads (finger 82). A short circuit between the substrate and the finger or a short circuit between the fingers occurs, which causes a quality problem.

The present invention has been made in view of the above circumstances, and has as its object to improve the quality of a semiconductor chip by suppressing the generation of Al burrs on the chip side during a scribe process. To provide a method for manufacturing a semiconductor device.

[0020]

In order to solve the above-mentioned problems, in a method of manufacturing a semiconductor device according to the present invention, an Al pad is formed on a scribe line, and a width of the Al pad in a direction perpendicular to the scribe line is described later. A step of preparing a wafer formed narrower than a cut width by a dicing blade; a step of forming a plurality of semiconductor chips by dicing the wafer using a dicing blade; and a step of performing TCP mounting on the semiconductor chip. ,
It is characterized by having.

In the above method of manufacturing a semiconductor device, the width of the Al pad in the direction perpendicular to the scribe line is formed to be smaller than the cut width by the dicing blade. Therefore, when the wafer is cut along the scribe line using the dicing blade, the Al pad can be completely cut off. Therefore, A
The occurrence of burrs of 1 can be suppressed. Therefore, T
At the time of CP mounting, the burrs of Al do not contact the inner leads (fingers). Therefore, the quality of the semiconductor chip can be improved.

Further, a method of manufacturing a semiconductor device according to the present invention.
In the above, the width of the Al pad is 20μm or more and 80μ
m or less.

In the method of manufacturing a semiconductor device according to the present invention, a polysilicon line connected to the Al pad may be further formed on a scribe line of the wafer in the step of preparing the wafer. is there. As described above, since the material of the wiring arranged on the scribe line is made of polysilicon which is harder than Al, no burrs are generated in the scribe process. Therefore, the burrs do not come into contact with the inner leads (fingers) during TCP mounting, and the quality of the semiconductor chip can be improved.

In the method of manufacturing a semiconductor device according to the present invention, an Al pad having a quadrangular planar shape is formed on a scribe line, and the Al pad is formed so that two corners of the Al pad are located outside a region cut by a dicing blade described later. Preparing a plurality of semiconductor chips by dicing the wafer using a dicing blade, and providing a TCP to the semiconductor chips.
Mounting).

In the above method of manufacturing a semiconductor device, the Al pad is formed such that two corners of the Al pad are located outside the cut area by the dicing blade. For this reason, when the wafer is cut along the scribe line using the dicing blade, the Al pad can be cut off almost completely, and the burrs of Al can be reduced. Therefore, the contact between the Al burrs and the inner leads (fingers) during TCP mounting can be reduced. Therefore, the quality of the semiconductor chip can be improved.

In the method for manufacturing a semiconductor device according to the present invention, a monitor element and an Al wiring having a width of less than 1 μm, one end of which is connected to a scribe line, are formed, and the other end of the Al wiring is connected to a chip forming region. Preparing a wafer having an Al pad formed thereon, dicing the wafer with a dicing blade to form a plurality of semiconductor chips,
Performing P mounting.

In the above method of manufacturing a semiconductor device, a monitor element is arranged on a scribe line, and an Al pad electrically connected to the monitor element via an Al wiring is arranged in a chip formation region. For this reason, when the wafer is cut along the scribe line using a dicing blade, A
The pad is not cut. Therefore, no burrs of Al occur on the chip side after cutting. Therefore, the Al burr does not contact the inner lead (finger) during TCP mounting. Therefore, the quality of the semiconductor chip can be improved. Further, since the width of the Al wiring formed in the scribe line is less than 1 μm, the burrs of Al due to the Al wiring can be suppressed to less than 1 μm during dicing. Therefore, TC
At the time of P mounting, contact between the burrs of Al and the inner leads can be suppressed.

[0028]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1A illustrates a method for manufacturing a semiconductor device according to the first embodiment of the present invention, and is a plan view showing a part of a wafer. FIG.
It is sectional drawing which followed the 1b-1b line | wire shown to (a).

First, a wafer shown in FIG. 1A is manufactured. This wafer has chip forming regions 22 and 23 where semiconductor chips are formed and scribe lines 21. The chip forming regions 22 and 23 are scribe lines 21
Are separated by Pads 27 and 28 are formed in the chip forming regions 22 and 23. A plurality of Al pads 15 are formed on the scribe line 21. A
The l pad 15 is a pad for contacting a measurement needle when performing an electrical test on a TEG or the like formed on the wafer. The width of the Al pad 15 in the direction perpendicular to the scribe line is formed to be smaller than the cut width 24 by the dicing blade described later, specifically, for example, 20 μm.
It is desirable that the thickness be from m to 80 μm. Further, a predetermined interval 2 is provided between the cut width 24 and the chip formation region 22.
Five. The length 26 of the Al pad 15 in the direction parallel to the scribe line is
It is formed longer than the width of the l pad 15. This is to make it easier for the measurement needle to contact the Al pad 15 when performing the electrical test.

As shown in FIG. 1B, a silicon substrate 1
1, an insulating film 13 is formed.
An Al pad 15 is formed thereon. A silicon oxide film 17 is formed on the Al pad 15 and the insulating film 13, and a silicon nitride film 19 is formed on the silicon oxide film 17. An opening 20 located on the Al pad 15 is formed in the silicon nitride film 19 and the silicon oxide film 17.

Next, the Al pad 1 on such a wafer
5, an electrical test is performed, and then the wafer is subjected to a dicing process. That is, the wafer is cut along the scribe line 21 using the rotated dicing blade (blade). Thus, the semiconductor chips (IC chips) 22 and 23 are separated from the wafer.

Thereafter, the separated IC chips 22 and 23
Is subjected to a TCP mounting process.

That is, first, a TAB tape is prepared. This TAB tape is the same as that shown in FIG.
Thereafter, the inner leads (fingers) are positioned on the pads 27 of the IC chip, and the inner leads and the pads 27 are pressed and heated and pressed. In this way TC
Perform P mounting.

According to the first embodiment, the width of the Al pad 15 on the scribe line in the direction perpendicular to the scribe line is formed smaller than the cut width 24 of the dicing blade. Therefore, when the wafer is cut along the scribe line 21 using the dicing blade, the Al pad 15 can be completely cut off. Therefore, unlike the first conventional method for manufacturing a semiconductor device, Al burrs do not occur on the chip side after cutting. Therefore, during TCP mounting, the Al burrs do not contact the inner leads (fingers), and no short circuit between the silicon substrate 11 and the fingers or between the fingers occurs. Therefore, occurrence of chip failure can be prevented, and the quality of the IC chip can be improved.

In the first embodiment, the Al pad 15 having a rectangular planar shape is used, but an Al pad having another shape may be used.

FIG. 2A illustrates a method for manufacturing a semiconductor device according to the second embodiment of the present invention, and is a plan view showing a part of a wafer. FIG.
It is sectional drawing along the 2b-2b line shown to (a). FIG.
In (a) and (b), the same parts as those in FIG. 1 are denoted by the same reference numerals, and only different parts will be described.

First, a wafer shown in FIG. 2A is manufactured. On the scribe line 21 of this wafer, a plurality of A
An l pad 33 is formed. The Al pad 33 is a pad for contacting a measuring needle when performing an electrical test on a TEG or the like formed on the wafer. The width of the Al pad 33 in the direction perpendicular to the scribe line is formed smaller than the cut width 24 of the dicing blade described later. The length of the Al pad 33 in the direction parallel to the scribe line is the same as the length of the Al pad 3 in the vertical direction.
3, which is almost the same as the width. A polysilicon wiring 31 is connected to the Al pad 33, and the polysilicon wiring 31 is arranged on the scribe line 21.

As shown in FIG. 2B, the silicon substrate 1
1, an insulating film 12 is formed.
A polysilicon wiring 31 is formed thereon. An interlayer insulating film 14 is formed on the polysilicon wiring 31 and the insulating film 12, and a connection hole is formed in the interlayer insulating film 14. An Al pad 33 is formed in the connection hole and on the interlayer insulating film 14.

In the second embodiment, the same effects as in the first embodiment can be obtained.

Further, in the present embodiment, polysilicon is used as the material of the wiring 31 of the TEG disposed on the scribe line 21. Since this polysilicon is harder than Al in material, no burrs occur during the scribing process as in the second conventional method for manufacturing a semiconductor device. Therefore, at the time of TCP mounting, a short circuit between the silicon substrate 11 and the finger or a short circuit between the fingers does not occur, and it is possible to prevent a chip defect from occurring, and to improve the quality of the IC chip.

Further, since the polysilicon wiring 31 is also used in the IC chips 22 and 23, the polysilicon wiring 31 can be formed on the scribe line 21 without having to largely change the wafer manufacturing process.

FIG. 3A illustrates a method of manufacturing a semiconductor device according to the third embodiment of the present invention, and is a plan view showing a part of a wafer. FIG.
It is sectional drawing along the 3b-3b line shown to (a). FIG.
In (a) and (b), the same parts as those in FIG. 1 are denoted by the same reference numerals, and only different parts will be described.

First, a wafer shown in FIG. 3A is manufactured. A plurality of Al pads 35 are formed on the scribe line 21 of the wafer. The Al pad 35 is a pad for contacting a measuring needle when performing an electrical test on a TEG or the like formed on the wafer. Al pad 35
Is formed so that its planar shape is a quadrangle, and the two corners of the Al pad are located outside the cut area 24 by the dicing blade on the scribe line. In other words, in the first conventional method for manufacturing a semiconductor device, the Al pad of the TEG formed on the scribe line of the wafer has a shape consisting of a quadrilateral parallel to the scribe line. In the embodiment, the Al pad 3 of the TEG formed on the scribe line of the wafer
5 is arranged so as to have a shape consisting of a quadrilateral whose diagonal is parallel to the scribe line.

According to the third embodiment, the cut area 24 by the dicing blade on the scribe line is used.
Al pad 35 is formed so that the two corners of the Al pad are located outside the. By changing the orientation of the Al pad from the conventional one in this way, when the wafer is cut along the scribe line 21 using a dicing blade, the Al pad 35 can be cut off almost completely, and the burr of Al can be reduced. Can be reduced. In other words, by changing the direction of the Al pad 35,
Although the area of the 1 pad is large, the burrs of Al can be reduced. Therefore, the contact between the Al burrs and the inner leads (fingers) during TCP mounting can be reduced, and short-circuiting between the silicon substrate 11 and the fingers or between the fingers can be suppressed. Therefore, occurrence of chip failure can be suppressed,
The quality of the IC chip can also be improved.

FIG. 4 is a plan view illustrating a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention, showing a part of a wafer. Only different parts will be described.

First, the wafer shown in FIG. 4 is manufactured. This wafer has a chip forming area 2 where semiconductor chips are formed.
2 and 23 and a scribe line 21. Al pads 41 and 42 are formed in the chip formation region 22, and a monitor element 47 is formed on the scribe line 21. The monitor element 47 is electrically connected to Al pads 41 and 42 via Al wirings 43 and 44. The width a of each of the Al wirings 43 and 44 is less than 1 μm. The monitor element 47 and the Al pads 41 and 42 constitute a TEG. Al pads 41 and 42 are TE
A pad for contacting a measuring needle when performing an electrical test on G or the like. The width of the monitor element 47 in the direction perpendicular to the scribe line is formed smaller than the cut width 24 by the dicing blade.

Next, the Al pad 4 on such a wafer
An electrical test is performed using the wafers 1 and 42, and then a dicing process is performed on the wafer. Thereafter, a TCP mounting process is performed on the separated IC chips 22 and 23.

According to the fourth embodiment, the monitor element 47 is arranged on the scribe line 21, and the Al pads 41 and 42 electrically connected to the monitor element 47 are formed in the chip forming area 22. I have. Therefore, when the wafer is cut along the scribe line 21 using the dicing blade, the Al pads 41 and 42 are not cut. Therefore, unlike the third conventional method for manufacturing a semiconductor device, Al burrs do not occur on the chip side after cutting. Therefore, during TCP mounting, the Al burrs do not come into contact with the inner leads (fingers), and no short circuit between the silicon substrate and the fingers or short between the fingers occurs. Therefore, occurrence of chip failure can be prevented, and the quality of the IC chip can be improved.

In the present embodiment, the width a of the Al wirings 43 and 44 formed on the scribe lines 21 is 1 μm.
Less than. For this reason, when the wafer is cut along the scribe line 21 using a dicing blade,
Burrs of Al due to Al wirings 43 and 44 can be suppressed to less than about 1 μm. Therefore, when implementing TCP, A
The contact between the burrs of 1 and the inner leads (fingers) can be suppressed, and the occurrence of a short circuit between the silicon substrate and the finger or a short circuit between the fingers can also be suppressed. Therefore, occurrence of chip failure can be suppressed, and the quality of the IC chip can be improved.

The present invention is not limited to the above embodiment, but can be implemented with various modifications. For example,
The shape of the Al pad can be changed to another shape without departing from the gist of the invention.

[0052]

As described above, according to the present invention, the width of the Al pad in the direction perpendicular to the scribe line can be reduced.
It is formed narrower than the cut width by the dicing blade. Therefore, it is possible to provide a method of manufacturing a semiconductor device capable of suppressing generation of burrs of Al on the chip side during the scribing step and improving the quality of a semiconductor chip.

[Brief description of the drawings]

FIG. 1A is a plan view illustrating a part of a wafer for explaining a method of manufacturing a semiconductor device according to a first embodiment of the present invention, and FIG. , FIG. 1 (a)
FIG. 2 is a cross-sectional view taken along line 1b-1b shown in FIG.

FIG. 2A is a plan view illustrating a part of a wafer for explaining a method of manufacturing a semiconductor device according to a second embodiment of the present invention, and FIG. , FIG. 2 (a)
FIG. 2 is a cross-sectional view taken along line 2b-2b shown in FIG.

FIG. 3A is a plan view illustrating a part of a wafer for explaining a method of manufacturing a semiconductor device according to a third embodiment of the present invention, and FIG. , FIG. 3 (a)
FIG. 3 is a sectional view taken along line 3b-3b shown in FIG.

FIG. 4 is a plan view illustrating a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention and illustrating a part of a wafer.

FIG. 5 is a plan view illustrating a part of a wafer for explaining a conventional method for manufacturing a first semiconductor device.

FIG. 6 is a plan view illustrating a part of a wafer for explaining a conventional method for manufacturing a second semiconductor device.

FIG. 7 is a plan view illustrating a part of a wafer for explaining a third conventional method for manufacturing a semiconductor device.

FIGS. 8A and 8B are cross-sectional views showing a state in which a TCP mounting process is performed on the semiconductor chip shown in FIG. 5;

[Explanation of symbols]

12, 13 Insulating film 14 Interlayer insulating film 15 Al pad 17 Silicon oxide film 19 Silicon nitride film 20 Opening 21 Scribe line 22, 23 Chip formation region (IC chip) 24 Blade cut width 25 Cut width and chip formation region Interval 26 Length of Al pad parallel to scribe line 27, 28 Pad 31 Polysilicon wiring 33 Al pad 35 Al pad 41, 42 Al pad 43, 44 Al wiring 47 Monitor element 51 Al pad 61 Al pad 62 Al Wiring 71 Monitor element 72 Al pad 81 Flexible tape 82 Bonding lead (finger)

Claims (5)

[Claims] 1. A step of preparing a wafer in which an Al pad is formed in a scribe line, and a width of the Al pad in a direction perpendicular to the scribe line is smaller than a cut width by a dicing blade to be described later, and using a dicing blade. A method of manufacturing a semiconductor device, comprising: a step of forming a plurality of semiconductor chips by dicing the wafer; and a step of performing TCP mounting on the semiconductor chips. 2. The width of the Al pad is 20 μm or more and 80 or more.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the thickness is not more than μm. 3. The semiconductor device according to claim 1, wherein a polysilicon line connected to the Al pad is further formed on a scribe line of the wafer in the step of preparing the wafer. Production method. 4. A step of preparing a wafer in which an Al pad having a square planar shape is formed on a scribe line, and a two-corner of the Al pad is located outside a cut area by a dicing blade, which will be described later. A method for manufacturing a semiconductor device, comprising: a step of forming a plurality of semiconductor chips by dicing the wafer using a dicing blade; and a step of performing TCP mounting on the semiconductor chips. 5. A wafer is prepared in which a monitor element and an Al wiring having a width of less than 1 μm connected to one end thereof are formed on a scribe line, and an Al pad connected to the other end of the Al wiring is formed in a chip formation region. A plurality of semiconductor chips by dicing the wafer using a dicing blade; and a step of performing TCP mounting on the semiconductor chips. Method.