JP2000323441A - Cutting method of optical waveguide circuit chip formed on ceramic substrate - Google Patents
Cutting method of optical waveguide circuit chip formed on ceramic substrateInfo
- Publication number
- JP2000323441A JP2000323441A JP11128815A JP12881599A JP2000323441A JP 2000323441 A JP2000323441 A JP 2000323441A JP 11128815 A JP11128815 A JP 11128815A JP 12881599 A JP12881599 A JP 12881599A JP 2000323441 A JP2000323441 A JP 2000323441A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- optical waveguide
- waveguide circuit
- cutting
- circuit chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Optical Integrated Circuits (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
(57)【要約】
【課題】 高寸法精度で低損失なセラミックス基板上に
形成した光導波回路チップの切断方法を提供する。
【解決手段】 水や研磨液を用いることがないので、ド
ライでクリーンな状態で切断することができる。しかも
ＣＯ2 レーザビーム５−２（１０）の照射面の温度が６
００℃以下に抑えられ、光導波回路２の加工中の温度が
２００℃以下に抑えられた状態で切断することができる
ので、光導波回路２へ熱的なダメージを与えない。ま
た、切断した端面は略垂直な端面であるため、端面の研
磨が不要である。水や研磨液を用いないのでＯＨ基の混
入がない。少なくとも一方向に所望速度で移動するワー
クテーブル３上に光導波回路が形成された表面側を固定
してセラミックス基板１の裏面を加工するので、高寸法
精度で再現性よく切断加工を行うことができる。
[PROBLEMS] To provide a method for cutting an optical waveguide circuit chip formed on a ceramic substrate having high dimensional accuracy and low loss. SOLUTION: Since no water or polishing liquid is used, cutting can be performed in a dry and clean state. Moreover, the temperature of the surface irradiated with the CO 2 laser beam 5-2 (10) is 6
Since the optical waveguide circuit 2 can be cut in a state where the temperature is suppressed to 200 ° C. or less and the temperature during processing of the optical waveguide circuit 2 is suppressed to 200 ° C. or less, the optical waveguide circuit 2 is not thermally damaged. Further, since the cut end face is a substantially vertical end face, polishing of the end face is unnecessary. Since no water or polishing liquid is used, there is no mixing of OH groups. Since the front surface on which the optical waveguide circuit is formed is fixed on the work table 3 which moves at least in one direction at a desired speed, and the rear surface of the ceramic substrate 1 is processed, the cutting process can be performed with high dimensional accuracy and high reproducibility. it can.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、セラミックス基板
上に形成した光導波回路チップの切断方法に関する。The present invention relates to a method for cutting an optical waveguide circuit chip formed on a ceramic substrate.
【０００２】[0002]
【従来の技術】光・電子実装技術を実現する一つの手段
として、セラミックス基板上に高周波電子回路以外に、
光導波路型回路を形成した光・電子マルチチップモジュ
ールが注目されるようになってきた。2. Description of the Related Art As one means for realizing optical / electronic packaging technology, in addition to a high-frequency electronic circuit on a ceramic substrate,
An optical / electronic multi-chip module formed with an optical waveguide circuit has attracted attention.
【０００３】この種の光導波路型回路として、高分子材
料や石英系ガラス材料を用いて実現する試みが行われて
いる。Attempts have been made to realize this type of optical waveguide circuit using a polymer material or a quartz glass material.
【０００４】図５（ａ）はセラミックス基板上に形成し
た光導波路の従来例を示す光入射側の正面図、図５
（ｂ）は図５（ａ）のＡ−Ａ線断面図である。FIG. 5A is a front view of a light incident side showing a conventional example of an optical waveguide formed on a ceramic substrate.
FIG. 5B is a sectional view taken along line AA in FIG.
【０００５】この光導波路は、セラミックス基板３０上
に形成されたクラッド層３１の中にコア層３２が埋め込
まれた構造となっている。クラッド層３１及びコア層３
２には石英系ガラスを用いる場合と、ポリイミドやシリ
コーン等の高分子材料を用いる場合との両方が検討され
ている。[0005] This optical waveguide has a structure in which a core layer 32 is embedded in a cladding layer 31 formed on a ceramic substrate 30. Cladding layer 31 and core layer 3
For 2, a case using a quartz glass and a case using a polymer material such as polyimide or silicone are both studied.
【０００６】図６（ａ）は大面積のセラミックス基板上
に形成された複数の光導波回路（光分岐回路）の平面図
であり、図６（ｂ）は図６（ａ）の右側面図である。FIG. 6 (a) is a plan view of a plurality of optical waveguide circuits (optical branch circuits) formed on a large-area ceramic substrate, and FIG. 6 (b) is a right side view of FIG. 6 (a). It is.
【０００７】この種の大面積のセラミックス基板３０上
に同一の光導波回路３３−１、３３−２、３３−３、３
３−４を４個形成した後、これらの光導波回路３３−１
〜３３−４を個別に切断することにより図７に示すよう
な光導波回路チップが４個得られる。The same optical waveguide circuits 33-1, 33-2, 33-3, 3 are provided on a large-area ceramic substrate 30 of this kind.
After forming four 3-4, these optical waveguide circuits 33-1
By individually cutting through to 33-4, four optical waveguide circuit chips as shown in FIG. 7 are obtained.
【０００８】図７（ａ）は図６（ａ）、（ｂ）に示した
光導波回路を分割したチップの平面図であり、図７
（ｂ）は図７（ａ）の右側面図である。FIG. 7A is a plan view of a chip obtained by dividing the optical waveguide circuit shown in FIGS. 6A and 6B.
FIG. 8B is a right side view of FIG.
【０００９】図７（ａ）、（ｂ）に示す光導波回路は、
１入力２出力の光分岐回路である。[0009] The optical waveguide circuit shown in FIGS.
This is a one-input two-output optical branch circuit.
【００１０】ここで図６（ａ）に示したセラミックス基
板３０から４個の光導波回路を切断して取り出す方法と
して、従来、ダイシングマシンを用いて切断する方法が
検討されている。Here, as a method of cutting and extracting four optical waveguide circuits from the ceramic substrate 30 shown in FIG. 6A, a method of cutting using a dicing machine has been conventionally studied.
【００１１】[0011]
【発明が解決しようとする課題】ところで、従来のダイ
シングマシンを用いてセラミックス基板上に形成されて
いる光導波回路を切り出す方法には以下の問題点があ
る。However, there are the following problems in the method of cutting out an optical waveguide circuit formed on a ceramic substrate using a conventional dicing machine.
【００１２】(1) ダイシングマシンを用いたセラミック
ス基板の切断においては、水を吹き付けながら切断を行
わなければならない。しかし、光導波回路が水に濡れる
と光導波回路のクラッド層３１やコア層３２内に水が拡
散し、ＯＨ基による光吸収損失（波長１．３９μｍ帯で
の光吸収損失）が増大する。このため、波長１．３μｍ
帯、１．５μｍ帯での光導波回路損失が大きくなるとい
う問題が生じる。特にクラッド層３１とコア層３２とが
高分子材料で構成されている場合には、ＯＨ基による光
吸収損失が大幅に増大してしまう。(1) In cutting a ceramic substrate using a dicing machine, the cutting must be performed while spraying water. However, when the optical waveguide circuit is wet with water, the water diffuses into the cladding layer 31 and the core layer 32 of the optical waveguide circuit, and the light absorption loss (light absorption loss in the 1.39 μm wavelength band) due to OH groups increases. Therefore, the wavelength of 1.3 μm
In this case, there is a problem that the optical waveguide circuit loss in the band and the 1.5 μm band increases. In particular, when the cladding layer 31 and the core layer 32 are made of a polymer material, the light absorption loss due to the OH group is greatly increased.
【００１３】(2) ダイシングマシンを用いたセラミック
ス基板の切断においては、セラミックス基板や光導波回
路の切断端面にチッピングやダレが生じやすいので、切
断後、切断端面を研磨材で研磨する必要があった。しか
し、この切断後の研磨時にも水や研磨材液を吹き付けな
がらのウェット研磨加工であり、上記(1) と同様のＯＨ
基による光吸収損失が増加してしまう。(2) When cutting a ceramic substrate using a dicing machine, chipping or sagging is likely to occur on the cut end surface of the ceramic substrate or the optical waveguide circuit. Therefore, after cutting, it is necessary to polish the cut end surface with an abrasive. Was. However, during the polishing after the cutting, wet polishing is performed while spraying water or an abrasive liquid.
The light absorption loss by the group increases.
【００１４】(3) ダイシングマシンを用いて切断した場
合には、セラミックス基板の硬度と光導波回路の材料の
硬度とが異なるため、端面を平坦に加工することが困難
である。また研磨時も端面を平坦に加工するため、あて
板でサンドイッチ状に挟んで加工する等の複雑な工程と
なる。その結果、加工工数の増大により高価なものにな
ってしまう。(3) When cutting is performed using a dicing machine, it is difficult to flatten the end face because the hardness of the ceramic substrate and the hardness of the material of the optical waveguide circuit are different. In addition, since the end face is flattened even during polishing, a complicated process such as sandwiching the end face in a sandwich shape is required. As a result, the cost increases due to an increase in the number of processing steps.
【００１５】そこで、本発明の目的は、上記課題を解決
し、高寸法精度で低損失なセラミックス基板上に形成し
た光導波回路チップの切断方法を提供することにある。It is an object of the present invention to solve the above-mentioned problems and to provide a method for cutting an optical waveguide circuit chip formed on a ceramic substrate having high dimensional accuracy and low loss.
【００１６】[0016]
【課題を解決するための手段】上記目的を達成するため
に本発明のセラミックス基板上に形成した光導波回路チ
ップの切断方法は、表面に少なくとも光導波回路が形成
されたセラミックス基板の裏面の一方の端面にＣＯ2 レ
ーザビームを照射してセラミックス基板に熱応力による
亀裂を発生させ、亀裂をセラミックス基板の他方の端面
まで進展させることによって切断するものである。According to the present invention, there is provided a method for cutting an optical waveguide circuit chip formed on a ceramic substrate, comprising the steps of: the end face is irradiated with CO 2 laser beam to generate a crack in the ceramic substrate due to thermal stress, it is to cut by progress crack to the other end face of the ceramic substrate.
【００１７】上記構成に加え本発明のセラミックス基板
上に形成した光導波回路チップの切断方法は、セラミッ
クス基板を少なくとも一方向に所望速度で移動させなが
らセラミックス基板に亀裂を発生させ、亀裂を進展させ
ることによりセラミックス基板を切断するのが好まし
い。In addition to the above-described structure, the method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention causes a crack to be generated in the ceramic substrate while moving the ceramic substrate in at least one direction at a desired speed. Accordingly, it is preferable to cut the ceramic substrate.
【００１８】上記構成に加え本発明のセラミックス基板
上に形成した光導波回路チップの切断方法は、セラミッ
クス基板の光導波回路が形成された表面側を冷却した状
態でセラミックス基板を切断するのが好ましい。In addition to the above structure, in the method of cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention, it is preferable to cut the ceramic substrate while cooling the surface of the ceramic substrate on which the optical waveguide circuit is formed. .
【００１９】上記構成に加え本発明のセラミックス基板
上に形成した光導波回路チップの切断方法は、セラミッ
クス基板の裏面のＣＯ2 レーザビームの照射面の直後を
冷却しながらセラミックス基板を切断してもよい。In addition to the above structure, the method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention can be performed by cutting the ceramic substrate while cooling immediately after the CO 2 laser beam irradiation surface on the back surface of the ceramic substrate. Good.
【００２０】上記構成に加え本発明のセラミックス基板
上に形成した光導波回路チップの切断方法は、ＣＯ2 レ
ーザビームの断面形状を略円形、略楕円形、略線形のい
ずれかに形成してセラミックス基板の裏面に照射するの
が好ましい。In addition to the above structure, the method of cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention is characterized in that the CO 2 laser beam is formed into a substantially circular, substantially elliptical or substantially linear cross-sectional shape. It is preferable to irradiate the back surface of the substrate.
【００２１】上記構成に加え本発明のセラミックス基板
上に形成した光導波回路チップの切断方法は、ガラス材
料、高分子材料あるいは上記材料の組み合わせのいずれ
かで構成された光導波回路が形成されたセラミックス基
板を切断するのが好ましい。In addition to the above-described structure, the method of cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention includes forming an optical waveguide circuit made of any one of a glass material, a polymer material, and a combination of the above materials. Preferably, the ceramic substrate is cut.
【００２２】本発明によれば、水や研磨液を用いること
がないので、ドライでクリーンな状態で切断することが
できる。しかもＣＯ2 レーザビームの照射面の温度が６
００℃以下に抑えられ、光導波回路の加工中の温度が２
００℃以下に抑えられた状態で切断することができるの
で、光導波回路へ熱的なダメージを与えない。また、切
断した端面は略垂直な端面であるため、端面の研磨が不
要であり、水や研磨液を用いないのでＯＨ基の混入がな
い。According to the present invention, since water and a polishing liquid are not used, cutting can be performed in a dry and clean state. Moreover, the temperature of the CO 2 laser beam irradiation surface is 6
The temperature during processing of the optical waveguide circuit is 2
Since the cutting can be performed in a state where the temperature is controlled to be not more than 00 ° C., the optical waveguide circuit is not thermally damaged. Further, since the cut end face is a substantially vertical end face, polishing of the end face is unnecessary, and since water or a polishing liquid is not used, there is no mixing of OH groups.
【００２３】また、本発明によれば、少なくとも一方向
に所望速度で移動するワークテーブル上に光導波回路表
面側を固定して加工を行うことができるので、高寸法精
度で再現性よく切断加工を行うことができる。Further, according to the present invention, since the surface of the optical waveguide circuit can be fixed on a work table which moves at least in one direction at a desired speed, the processing can be performed with high dimensional accuracy and high reproducibility. It can be performed.
【００２４】さらに、本発明によれば、光導波回路表面
側を冷却した状態で切断加工を行うので、光導波回路に
熱的なダメージを与えることがほとんどない。Further, according to the present invention, since the cutting process is performed while the surface of the optical waveguide circuit is cooled, the optical waveguide circuit is hardly thermally damaged.
【００２５】また、本発明によれば、セラミックス基板
の裏面のＣＯ2 レーザビームの照射面のすぐ後方側を冷
却しながら切断するので、ＣＯ2 レーザビームの光パワ
ーをより小さくして切断することができる。急加熱部と
急冷却部との温度差が大きくなるので、その分だけより
大きな応力分布が生じ、結果的に切断速度を速めること
ができる。Further, according to the present invention, since the cut while cooling immediately rear side of the irradiation surface of the back of the CO 2 laser beam of the ceramic substrate, cutting to smaller optical power of the CO 2 laser beam Can be. Since the temperature difference between the rapid heating portion and the rapid cooling portion increases, a larger stress distribution is generated by that much, and as a result, the cutting speed can be increased.
【００２６】さらにまた、本発明によれば、ＣＯ2 レー
ザビームの断面形状を選択することにより、例えば断面
が線形のビームを用いればより高寸法精度で切断するこ
とができる。Further, according to the present invention, by selecting the cross-sectional shape of the CO 2 laser beam, cutting can be performed with higher dimensional accuracy by using a beam having a linear cross section, for example.
【００２７】本発明によれば、光導波回路の材料とし
て、ガラス材料は勿論のこと切断でき、高分子材料でも
セラミックス基板上に密着性よく形成され、かつ冷却さ
れていれば熱的ダメージを生じることなく切断すること
ができる。また、ガラス材料と高分子材料とが併用して
用いられても切断でき、広い領域の光・電子マルチチッ
プモジュールへ適用可能となる。なお、当然のことなが
ら本発明で切断したチップには光導波回路以外にセラミ
ックス基板内や基板上に電子回路が実装されていてもよ
い。According to the present invention, as a material of the optical waveguide circuit, not only a glass material but also a glass material can be cut, and even a polymer material is formed on a ceramic substrate with good adhesion, and causes thermal damage if cooled. Can be cut without the need. Further, even when a glass material and a polymer material are used in combination, the glass material and the polymer material can be cut, and can be applied to a wide area optical / electronic multi-chip module. Of course, an electronic circuit may be mounted on the ceramic substrate or on the substrate other than the optical waveguide circuit on the chip cut in the present invention.
【００２８】以上において、切断加工中にＯＨ基の混入
がないので、低損失な光導波路回路を有する光・電子マ
ルチチップモジュールを高速、低コスト、高寸法精度で
加工することができる。In the above, since the OH group is not mixed during the cutting process, an optical / electronic multi-chip module having a low-loss optical waveguide circuit can be processed with high speed, low cost, and high dimensional accuracy.
【００２９】[0029]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づいて詳述する。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
【００３０】図１は本発明のセラミックス基板上に形成
した光導波回路チップの切断方法の一実施の形態を示す
構成図である。但し、光学系は側面図となっており、セ
ラミックス基板等は外観斜視図となっている。FIG. 1 is a block diagram showing one embodiment of a method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention. However, the optical system is a side view, and the ceramic substrate and the like are external perspective views.
【００３１】同図において、３は少なくとも一方向（矢
印４方向）に所望速度で移動するワークテーブルであ
り、このワークテーブル３はモータ（図示せず。）によ
り移動するようになっている。このワークテーブル３上
に被加工物が真空吸着あるいは両面接着テープ等によっ
て固定される。被加工物は、セラミックス基板１上に光
導波回路２が形成されたものであり、ワークテーブル３
上には光導波回路２の表面が接触するように固定されて
いる。すなわち、ワークテーブル３上には被加工物が裏
返しに固定されている。In FIG. 1, reference numeral 3 denotes a work table which moves at least in one direction (the direction of arrow 4) at a desired speed, and the work table 3 is moved by a motor (not shown). The workpiece is fixed on the work table 3 by vacuum suction or double-sided adhesive tape. The workpiece is a ceramic substrate 1 on which an optical waveguide circuit 2 is formed.
Above is fixed so that the surface of the optical waveguide circuit 2 contacts. That is, the workpiece is fixed upside down on the work table 3.
【００３２】ここで、セラミックス基板１上には図６
（ａ）に示したように、複数個の光導波回路２が形成さ
れており、これらの光導波回路２がチップ状に切断加工
される。この切断加工は、セラミックス基板１の裏面へ
ＣＯ2 レーザビーム５−２を照射することによって基板
１に熱応力による亀裂８を発生させ、その亀裂８を進展
させることによって切断するものである。Here, FIG.
As shown in (a), a plurality of optical waveguide circuits 2 are formed, and these optical waveguide circuits 2 are cut into chips. In this cutting process, the CO 2 laser beam 5-2 is applied to the back surface of the ceramic substrate 1 to generate a crack 8 in the substrate 1 due to thermal stress, and the substrate is cut by growing the crack 8.
【００３３】本切断方法は、ＣＯ2 レーザの平行ビーム
５−１を集光レンズ６で集光させたＣＯ2 レーザビーム
５−２をセラミックス基板１の裏面（図では上面）へ照
射すると共に、ＣＯ2 レーザビーム５−２に沿ってアシ
ストガスを矢印７−１、７−２方向に噴射しながら切断
加工を行うものである。ＣＯ2 レーザビーム５−１は連
続発振あるいはパルス発振のいずれのものを用いてもよ
い。切断を行うためには、ＣＯ2 レーザビーム５−２は
セラミックス基板１の裏面上に非集束ビーム（デフォー
カスビーム）で照射するのが好ましい。[0033] This cutting method, irradiates the CO 2 laser parallel beam 5-1 condenser lens 6 CO 2 laser beam 5-2 is condensed with the back surface of the ceramic substrate 1 (in the figure the upper surface), The cutting process is performed while injecting the assist gas in the directions of arrows 7-1 and 7-2 along the CO 2 laser beam 5-2. The CO 2 laser beam 5-1 may use either continuous oscillation or pulse oscillation. In order to perform cutting, it is preferable to irradiate the CO 2 laser beam 5-2 on the back surface of the ceramic substrate 1 with a non-focused beam (defocused beam).
【００３４】光導波回路２が高分子材料で構成されてい
る場合には、加工時の温度が２５０℃以上になると、上
記材料の熱変質（熱による組織変化、屈折率変化等）を
伴うので、ワークテーブル３は冷却しておくのが好まし
い。この冷却方法は、例えばワークテーブル３内に空洞
の冷媒循環通路を設けた構成が用いられる。In the case where the optical waveguide circuit 2 is made of a polymer material, if the temperature at the time of processing becomes 250 ° C. or more, the above-mentioned material is accompanied by thermal deterioration (a structural change due to heat, a refractive index change, etc.). The work table 3 is preferably cooled. For this cooling method, for example, a configuration in which a hollow refrigerant circulation passage is provided in the work table 3 is used.
【００３５】図１に示した構成では、ＣＯ2 レーザビー
ム５−２の断面形状は略円形状であるが、図２に示した
ように略線形断面形状のビーム１０を用いてもよい。こ
のような略線形ビームを用いれば、そのビーム幅を狭く
し、そのビーム長を長くすることによって、より高寸法
精度で、より熱影響の少ない切断を行うことができる。In the configuration shown in FIG. 1, the cross-sectional shape of the CO 2 laser beam 5-2 is substantially circular, but a beam 10 having a substantially linear cross-sectional shape as shown in FIG. 2 may be used. If such a substantially linear beam is used, cutting can be performed with higher dimensional accuracy and less thermal influence by narrowing the beam width and lengthening the beam length.
【００３６】図２は本発明のセラミックス基板上に形成
した光導波回路チップの切断方法の他の実施の形態を示
す構成図である。但し、光学系は側面図となっており、
セラミックス基板等は外観斜視図となっている。FIG. 2 is a block diagram showing another embodiment of the method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention. However, the optical system is a side view,
The ceramic substrate and the like are external perspective views.
【００３７】なお、略線形断面形状のビーム１０を形成
するには図２に示すように集光レンズ６と基板１の裏面
との間にＺｎＳｅのロッドレンズ９を挿入する方法が用
いられる。ロッドレンズ９の断面に平行に略線状ビーム
が形成される。この略線状ビーム１０の幅ＷB 及び長さ
ＬB は集光レンズ６とロッドレンズ９との間隔ｄ1 、ロ
ッドレンズ９と基板１の裏面との間隔ｄ2 を大きくすれ
ば線状ビームの長さＬB を大きくとることができ、ロッ
ドレンズ９の外径φL を小さくすれば線状ビーム１０の
長さＬB を大きくとることができる。In order to form the beam 10 having a substantially linear cross section, a method of inserting a rod lens 9 of ZnSe between the condenser lens 6 and the back surface of the substrate 1 as shown in FIG. 2 is used. A substantially linear beam is formed parallel to the cross section of the rod lens 9. Width W B and a length L B is a condenser lens 6 and the distance d 1 between the rod lens 9, a rod lens 9 and the linear beam by increasing the distance d 2 between the rear surface of the substrate 1 of the substantially linear beam 10 length L B can be made large, it is possible to increase the length L B of the linear beam 10 by reducing the outer diameter phi L of the rod lens 9.
【００３８】図３は本発明のセラミックス基板上に形成
した光導波回路チップの切断方法の他の実施の形態を示
す構成図である。但し、光学系は側面図となっており、
セラミックス基板等は外観斜視図となっている。FIG. 3 is a block diagram showing another embodiment of the method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention. However, the optical system is a side view,
The ceramic substrate and the like are external perspective views.
【００３９】同図に示す構成は、図１に示した構成に以
下の点を付加したものである。The configuration shown in FIG. 7 is obtained by adding the following points to the configuration shown in FIG.
【００４０】第１の点は、ＣＯ2 レーザビーム５−２の
セラミックス基板１の裏面上の照射面のすぐ後方を急冷
する機構を設けた点である。すなわち、集光レンズ６の
後方にノズル１１を設け、ノズル１１内に矢印１２−
１、１２−２方向に、例えば急冷剤（例えばオゾン層を
破壊しないフロンガス、ハイドロフルロカーボン、商品
名ＨＦＣ１３４ａやハイドロクロロアルアン、商品名Ｈ
ＦＡ１３４ａあるいは瞬間凍結剤、商品名マイナス９
６、フリーズイット２０００等）を導くようにしたもの
である。上記急冷剤以外に液体窒素を吹き付けてもよ
い。また、ＨｅやＡｒガスを吹き付けて冷却してもよ
い。このように急加熱、急冷却をごく狭い領域で行わせ
ることによって、より温度差を大きくすることができ、
切断速度の向上、熱影響の低減等の効果が得られる。The first point is that a mechanism is provided to rapidly cool the CO 2 laser beam 5-2 immediately behind the irradiation surface on the back surface of the ceramic substrate 1. That is, a nozzle 11 is provided behind the condenser lens 6 and an arrow 12-
In the directions 1 and 12-2, for example, a quenching agent (eg, chlorofluorocarbon, HFC134a or hydrochloroaluan, trade name H, which does not destroy the ozone layer)
FA134a or flash freezer, trade name -9
6, Freeze-it 2000, etc.). Liquid nitrogen may be sprayed in addition to the quenching agent. Also, cooling may be performed by blowing He or Ar gas. By causing the rapid heating and rapid cooling to be performed in a very narrow area in this manner, the temperature difference can be further increased,
Effects such as improvement of the cutting speed and reduction of the heat effect can be obtained.
【００４１】第２の点は、亀裂８を発生させる基板１の
真下のワークテーブル３に液体窒素を貯えておく空洞の
タンク１４と、その液体窒素を吹き出させるスリット１
３とをタンク１４の上に設け、亀裂８を発生させる光導
波回路２の表面を局所的に冷却するようにした点であ
る。この光導波回路２の表面の冷却することにより、光
導波回路２の熱的ダメージの発生を抑え、切断加工時に
おける光導波回路２の光学的特性の変化を抑える等の効
果が得られる。The second point is that a hollow tank 14 for storing liquid nitrogen on the work table 3 directly below the substrate 1 where the crack 8 is generated, and a slit 1 for blowing out the liquid nitrogen.
3 is provided on the tank 14 to locally cool the surface of the optical waveguide circuit 2 in which the crack 8 is generated. By cooling the surface of the optical waveguide circuit 2, effects such as suppressing thermal damage to the optical waveguide circuit 2 and suppressing changes in optical characteristics of the optical waveguide circuit 2 at the time of cutting can be obtained.
【００４２】図４は本発明のセラミックス基板上に形成
した光導波回路チップの切断方法の他の実施の形態を示
す構成図である。FIG. 4 is a block diagram showing another embodiment of the method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention.
【００４３】同図に示す構成は図２に示した構成に急冷
機構を付加したものである。すなわち、急加熱部のすぐ
後方を急冷却するためのノズル１１を設け、そのノズル
１１内に急冷剤を矢印１２−１、１２−２方向に吹き付
けるようにしたものである。The configuration shown in the figure is obtained by adding a rapid cooling mechanism to the configuration shown in FIG. That is, a nozzle 11 for rapidly cooling immediately behind the rapid heating section is provided, and a quenching agent is sprayed in the nozzle 11 in the directions of arrows 12-1 and 12-2.
【００４４】本発明に用いられるセラミックス基板１
は、通常、よく知られているアルミナ、チタニア系、ジ
ルコニア系、窒化珪素系、炭化珪素系等の基板を用いる
ことができる。また、セラミックス基板１は多層状に積
層され、各層にＩＣ、ＬＳＩ、電気配線パターン、光素
子、光導波路等が形成されていてもよい。The ceramic substrate 1 used in the present invention
In general, well-known substrates such as alumina, titania, zirconia, silicon nitride, and silicon carbide can be used. Further, the ceramic substrate 1 may be laminated in a multilayer shape, and an IC, an LSI, an electric wiring pattern, an optical element, an optical waveguide, etc. may be formed in each layer.
【００４５】[0045]
【実施例】次に数値を挙げて説明するがこれに限定され
るものではない。Next, the present invention will be described with reference to numerical values, but the present invention is not limited thereto.
【００４６】（実施例１）セラミックス基板１として１
００ｍｍ（幅）×１００ｍｍ（奥行き）×１ｍｍ（厚
さ）のアルミナ基板を用いた。アルミナ基板の上にクラ
ッド層１５としてＳｉＯ2 （膜厚約３０μｍ）、コア層
１６−１〜１６−４としてＰ2 Ｏ5 −ＳｉＯ2 （８μｍ
（Ｗ）×７μｍ（Ｔ））を用いて比屈折率差０．５％の
光導波回路２を形成した。この光導波回路２が形成され
たアルミナ基板を切断した。(Example 1) As the ceramic substrate 1,
An alumina substrate of 00 mm (width) × 100 mm (depth) × 1 mm (thickness) was used. SiO 2 (film thickness: about 30 μm) as the cladding layer 15 and P 2 O 5 —SiO 2 (8 μm) as the core layers 16-1 to 16-4 on the alumina substrate.
(W) × 7 μm (T)) was used to form an optical waveguide circuit 2 having a relative refractive index difference of 0.5%. The alumina substrate on which the optical waveguide circuit 2 was formed was cut.
【００４７】切断条件は、 (1) ＣＯ2 レーザビーム５−２のパワーを１００Ｗと
し、そのビーム断面形状として約２ｍｍφの円形とし、
アシストガスとして圧力０．５ｋｇ／ｃｍ2 のＮ２ガス
を用いて切断加工を行った。その結果、ワークテーブル
３の矢印４方向への移動速度が３０ｍｍ／ｓｅｃから５
０ｍｍ／ｓｅｃの範囲で切断することができた。The cutting conditions are as follows: (1) The power of the CO 2 laser beam 5-2 is set to 100 W, and the beam cross section is set to a circular shape of about 2 mmφ,
Cutting was performed using N 2 gas at a pressure of 0.5 kg / cm 2 as an assist gas. As a result, the moving speed of the work table 3 in the direction of the arrow 4 is reduced from 30 mm / sec to 5 mm.
Cutting was possible in the range of 0 mm / sec.
【００４８】（２） ＣＯ2 レーザビーム５−２のパワ
ーを２００Ｗとし、それ以外のパラメータは(1) と同様
にして、ターンテーブルの矢印４方向への移動速度を変
えて切断できる条件を探索した。その結果、８０ｍｍ／
ｓｅｃから１２０ｍｍ／ｓｅｃの移動速度の範囲で切断
することができた。(2) The power of the CO 2 laser beam 5-2 is set to 200 W, and the other parameters are set in the same manner as in (1), and the conditions for cutting by changing the moving speed of the turntable in the direction of arrow 4 are searched. did. As a result, 80 mm /
Cutting could be performed within the range of the moving speed from 120 sec / 120 mm / sec.
【００４９】上記(1) 及び(2) のいずれの条件でも切断
端面は略垂直な端面となっており、端面研磨をする必要
がなく、光を入出射させることができた。また、波長
１．３９μｍでのＯＨ基による吸収損失の増大は、へき
開で割って評価した場合と比較してほとんど増加してい
ないことが分かった。Under any of the above conditions (1) and (2), the cut end face was a substantially vertical end face, and there was no need to polish the end face, and light could be emitted and emitted. In addition, it was found that the increase in absorption loss due to the OH group at a wavelength of 1.39 μm was hardly increased as compared with the case where evaluation was performed by dividing by cleavage.
【００５０】（実施例２）アルミナ基板１上にポリイミ
ド系の光導波回路２を形成したものについても切断を行
った。その結果、非常に平滑な切断端面を得ることがで
きた。また、ポリイミド系光導波回路の熱的ダメージも
ないことが確認できた。(Example 2) A polyimide optical waveguide circuit 2 formed on an alumina substrate 1 was also cut. As a result, a very smooth cut end surface could be obtained. Also, it was confirmed that there was no thermal damage to the polyimide optical waveguide circuit.
【００５１】図１から図４において、ＣＯ2 レーザビー
ム５−１は上方向から下方向へ照射する状態が示されて
いるが、これに限定されず下方向から上方向へ照射する
ような機構で行ってもよい。この場合には、セラミック
ス基板１の裏面をスリット付きのターンテーブル３上に
固定し、スリットを通してセラミックス基板１の裏面に
ＣＯ2 レーザビーム５−２を照射する必要がある。光導
波回路２の表面は、例えば液体窒素等を吹き付けて冷却
するのが好ましい。FIGS. 1 to 4 show a state where the CO 2 laser beam 5-1 is irradiated from the upper side to the lower side. However, the present invention is not limited to this. May be performed. In this case, it is necessary to fix the back surface of the ceramic substrate 1 on the turntable 3 having a slit, and irradiate the CO 2 laser beam 5-2 to the back surface of the ceramic substrate 1 through the slit. The surface of the optical waveguide circuit 2 is preferably cooled by spraying, for example, liquid nitrogen or the like.
【００５２】以上本発明によれば、(1) 水や研磨液を用
いないドライクリーンプロセスで切断することができる
ので、切断プロセス中にＯＨ基が光導波回路中に拡散し
て浸入することがない。したがって、上記プロセス中に
光導波回路の光学特性が変化することがない。As described above, according to the present invention, it is possible to (1) cut by a dry clean process that does not use water or a polishing liquid, so that OH groups can diffuse into the optical waveguide circuit and enter during the cutting process. Absent. Therefore, the optical characteristics of the optical waveguide circuit do not change during the above process.
【００５３】(2) 熱的なダメージを受けにくい。(2) It is hard to receive thermal damage.
【００５４】(3) 切断した端面は略垂直な端面であるの
で、研磨が不要である。(3) Since the cut end face is a substantially vertical end face, polishing is unnecessary.
【００５５】(4) 高寸法精度で、短時間に切断加工を行
うことができる。すなわち、切り代幅が略「０」であ
り、数十ｍｍ／ｓｅｃから百数十ｍｍ／ｓｅｃの速度で
切断加工を行うことができる。(4) Cutting can be performed with high dimensional accuracy in a short time. That is, the cutting width is substantially “0”, and the cutting can be performed at a speed of several tens mm / sec to one hundred and several tens mm / sec.
【００５６】(5) 低損失な光・電子マルチチップモジュ
ールを低コストで実現することができる。(5) A low-loss optical / electronic multi-chip module can be realized at low cost.
【００５７】[0057]
【発明の効果】以上要するに本発明によれば、次のよう
な優れた効果を発揮する。In summary, according to the present invention, the following excellent effects are exhibited.
【００５８】高寸法精度で低損失なセラミックス基板上
に形成した光導波回路チップの切断方法の提供を実現で
きる。A method for cutting an optical waveguide circuit chip formed on a ceramic substrate with high dimensional accuracy and low loss can be provided.
【図１】本発明のセラミックス基板上に形成した光導波
回路チップの切断方法の一実施の形態を示す構成図であ
る。FIG. 1 is a configuration diagram showing one embodiment of a method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention.
【図２】本発明のセラミックス基板上に形成した光導波
回路チップの切断方法の他の実施の形態を示す構成図で
ある。FIG. 2 is a configuration diagram showing another embodiment of the method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention.
【図３】本発明のセラミックス基板上に形成した光導波
回路チップの切断方法の他の実施の形態を示す構成図で
ある。FIG. 3 is a configuration diagram showing another embodiment of the method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention.
【図４】本発明のセラミックス基板上に形成した光導波
回路チップの切断方法の他の実施の形態を示す構成図で
ある。FIG. 4 is a configuration diagram showing another embodiment of a method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to the present invention.
【図５】（ａ）はセラミックス基板上に形成した光導波
路の従来例を示す光入射側の正面図、（ｂ）は（ａ）の
Ａ−Ａ線断面図である。5A is a front view of an optical waveguide formed on a ceramic substrate on a light incident side showing a conventional example, and FIG. 5B is a cross-sectional view taken along line AA of FIG.
【図６】（ａ）は大面積のセラミックス基板上に形成さ
れた複数の光導波回路の平面図であり、（ｂ）は（ａ）
の右側面図である。6A is a plan view of a plurality of optical waveguide circuits formed on a large-area ceramic substrate, and FIG. 6B is a plan view of FIG.
FIG.
【図７】（ａ）は図６（ａ）、（ｂ）に示した光導波回
路を分割したチップの平面図であり、（ｂ）は（ａ）の
右側面図である。7A is a plan view of a chip obtained by dividing the optical waveguide circuit shown in FIGS. 6A and 6B, and FIG. 7B is a right side view of FIG.
１ セラミックス基板 ２ 光導波回路 ３ ワークテーブル ５−２、１０ ＣＯ2 レーザビーム ６ 集光レンズReference Signs List 1 ceramic substrate 2 optical waveguide circuit 3 work table 5-2, 10 CO 2 laser beam 6 condenser lens
Claims (6)
たセラミックス基板の裏面の一方の端面にＣＯ2 レーザ
ビームを照射して上記セラミックス基板に熱応力による
亀裂を発生させ、該亀裂を上記セラミックス基板の他方
の端面まで進展させることによって切断することを特徴
とするセラミックス基板上に形成した光導波回路チップ
の切断方法。1. A ceramic substrate having at least one optical waveguide circuit formed on its front surface is irradiated with a CO 2 laser beam on one end surface of a back surface of the ceramic substrate to generate cracks in the ceramic substrate due to thermal stress. A method of cutting an optical waveguide circuit chip formed on a ceramic substrate, wherein the cutting is performed by extending the other end face of the optical waveguide circuit chip.
向に所望速度で移動させながら上記セラミックス基板に
亀裂を発生させ、該亀裂を進展させることにより上記セ
ラミックス基板を切断する請求項１に記載のセラミック
ス基板上に形成した光導波回路チップの切断方法。2. The ceramic substrate according to claim 1, wherein a crack is generated in the ceramic substrate while moving the ceramic substrate at a desired speed in at least one direction, and the ceramic substrate is cut by causing the crack to propagate. Cutting method of the optical waveguide circuit chip formed in the above.
成された表面側を冷却した状態で上記セラミックス基板
を切断する請求項１に記載のセラミックス基板上に形成
した光導波回路チップの切断方法。3. The method for cutting an optical waveguide circuit chip formed on a ceramic substrate according to claim 1, wherein the ceramic substrate is cut while the surface of the ceramic substrate on which the optical waveguide circuit is formed is cooled.
ーザビームの照射面の直後を冷却しながら上記セラミッ
クス基板を切断する請求項１から３のいずれかに記載の
セラミックス基板上に形成した光導波回路チップの切断
方法。4. The optical waveguide circuit formed on a ceramic substrate according to claim 1, wherein the ceramic substrate is cut while cooling immediately after the surface of the ceramic substrate irradiated with the CO 2 laser beam. How to cut chips.
円形、略楕円形、略線形のいずれかに形成して上記セラ
ミックス基板の裏面に照射する請求項１から４のいずれ
かに記載のセラミックス基板上に形成した光導波回路チ
ップの切断方法。5. The ceramic according to claim 1, wherein the CO 2 laser beam is formed into a substantially circular, substantially elliptical, or substantially linear cross-sectional shape and is irradiated onto the back surface of the ceramic substrate. A method for cutting an optical waveguide circuit chip formed on a substrate.
料の組み合わせのいずれかで構成された光導波回路が形
成されたセラミックス基板を切断する請求項１から５の
いずれかに記載のセラミックス基板上に形成した光導波
回路チップの切断方法。6. A ceramic substrate on which an optical waveguide circuit formed of any one of a glass material, a polymer material, and a combination of the above materials is formed. A method for cutting the formed optical waveguide circuit chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11128815A JP2000323441A (en) | 1999-05-10 | 1999-05-10 | Cutting method of optical waveguide circuit chip formed on ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11128815A JP2000323441A (en) | 1999-05-10 | 1999-05-10 | Cutting method of optical waveguide circuit chip formed on ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000323441A true JP2000323441A (en) | 2000-11-24 |
Family
ID=14994111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11128815A Pending JP2000323441A (en) | 1999-05-10 | 1999-05-10 | Cutting method of optical waveguide circuit chip formed on ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000323441A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006036602A (en) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | Ceramic member, method for manufacturing the same, and electronic component using the same |
| JP2009018344A (en) * | 2007-06-15 | 2009-01-29 | Mitsubishi Electric Corp | Substrate processing method |
| JP2009056467A (en) * | 2007-08-29 | 2009-03-19 | Hamamatsu Photonics Kk | Apparatus and method for laser beam machining |
| JP2009296008A (en) * | 2002-03-12 | 2009-12-17 | Hamamatsu Photonics Kk | Method for manufacturing of light emitting element, light emitting diode, and semiconductor laser element |
| WO2010135616A2 (en) | 2009-05-21 | 2010-11-25 | Corning Incorporated | Method for separating a sheet of brittle material |
| US7985458B2 (en) | 2006-10-31 | 2011-07-26 | Kyocera Corporation | Ceramic member, method of forming groove in ceramic member, and substrate for electronic part |
| US8227724B2 (en) | 2000-09-13 | 2012-07-24 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8247734B2 (en) | 2003-03-11 | 2012-08-21 | Hamamatsu Photonics K.K. | Laser beam machining method |
| US8263479B2 (en) | 2002-12-03 | 2012-09-11 | Hamamatsu Photonics K.K. | Method for cutting semiconductor substrate |
| US8268704B2 (en) | 2002-03-12 | 2012-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
| JP2013043193A (en) * | 2011-08-23 | 2013-03-04 | Furukawa Electric Co Ltd:The | Method for processing ceramic substrate by laser beam |
| US8685838B2 (en) | 2003-03-12 | 2014-04-01 | Hamamatsu Photonics K.K. | Laser beam machining method |
| US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
| JP2020008778A (en) * | 2018-07-11 | 2020-01-16 | 日本電信電話株式会社 | Groove fabrication method for hybrid optical device and hybrid optical device |
| CN115461179A (en) * | 2020-04-28 | 2022-12-09 | Iti株式会社 | Ceramic cutting method and ceramic cutting equipment |
-
1999
- 1999-05-10 JP JP11128815A patent/JP2000323441A/en active Pending
Cited By (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8283595B2 (en) | 2000-09-13 | 2012-10-09 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US10796959B2 (en) | 2000-09-13 | 2020-10-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US9837315B2 (en) | 2000-09-13 | 2017-12-05 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8969761B2 (en) | 2000-09-13 | 2015-03-03 | Hamamatsu Photonics K.K. | Method of cutting a wafer-like object and semiconductor chip |
| US8946592B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8946589B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of cutting a substrate, method of cutting a wafer-like object, and method of manufacturing a semiconductor device |
| US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
| US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8933369B2 (en) | 2000-09-13 | 2015-01-13 | Hamamatsu Photonics K.K. | Method of cutting a substrate and method of manufacturing a semiconductor device |
| US8227724B2 (en) | 2000-09-13 | 2012-07-24 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| US8927900B2 (en) | 2000-09-13 | 2015-01-06 | Hamamatsu Photonics K.K. | Method of cutting a substrate, method of processing a wafer-like object, and method of manufacturing a semiconductor device |
| US8716110B2 (en) | 2000-09-13 | 2014-05-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
| JP2014068031A (en) * | 2002-03-12 | 2014-04-17 | Hamamatsu Photonics Kk | Light-emitting element manufacturing method |
| US8183131B2 (en) | 2002-03-12 | 2012-05-22 | Hamamatsu Photonics K. K. | Method of cutting an object to be processed |
| US8304325B2 (en) | 2002-03-12 | 2012-11-06 | Hamamatsu-Photonics K.K. | Substrate dividing method |
| US8314013B2 (en) | 2002-03-12 | 2012-11-20 | Hamamatsu Photonics K.K. | Semiconductor chip manufacturing method |
| JP2013016867A (en) * | 2002-03-12 | 2013-01-24 | Hamamatsu Photonics Kk | Manufacturing method of light-emitting element |
| US8361883B2 (en) | 2002-03-12 | 2013-01-29 | Hamamatsu Photonics K.K. | Laser processing method |
| US11424162B2 (en) | 2002-03-12 | 2022-08-23 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US10068801B2 (en) | 2002-03-12 | 2018-09-04 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8518800B2 (en) | 2002-03-12 | 2013-08-27 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8519511B2 (en) | 2002-03-12 | 2013-08-27 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8518801B2 (en) | 2002-03-12 | 2013-08-27 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8551865B2 (en) | 2002-03-12 | 2013-10-08 | Hamamatsu Photonics K.K. | Method of cutting an object to be processed |
| US8598015B2 (en) | 2002-03-12 | 2013-12-03 | Hamamatsu Photonics K.K. | Laser processing method |
| US8673745B2 (en) | 2002-03-12 | 2014-03-18 | Hamamatsu Photonics K.K. | Method of cutting object to be processed |
| US9711405B2 (en) | 2002-03-12 | 2017-07-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9553023B2 (en) | 2002-03-12 | 2017-01-24 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9548246B2 (en) | 2002-03-12 | 2017-01-17 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8802543B2 (en) | 2002-03-12 | 2014-08-12 | Hamamatsu Photonics K.K. | Laser processing method |
| US9543207B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US8889525B2 (en) | 2002-03-12 | 2014-11-18 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9543256B2 (en) | 2002-03-12 | 2017-01-10 | Hamamatsu Photonics K.K. | Substrate dividing method |
| JP2012138598A (en) * | 2002-03-12 | 2012-07-19 | Hamamatsu Photonics Kk | Light-emitting element manufacturing method |
| US8268704B2 (en) | 2002-03-12 | 2012-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
| JP2011206851A (en) * | 2002-03-12 | 2011-10-20 | Hamamatsu Photonics Kk | Laser beam machining apparatus |
| US9287177B2 (en) | 2002-03-12 | 2016-03-15 | Hamamatsu Photonics K.K. | Substrate dividing method |
| US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
| JP2009296008A (en) * | 2002-03-12 | 2009-12-17 | Hamamatsu Photonics Kk | Method for manufacturing of light emitting element, light emitting diode, and semiconductor laser element |
| US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
| US8409968B2 (en) | 2002-12-03 | 2013-04-02 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate via modified region formation and subsequent sheet expansion |
| US8450187B2 (en) | 2002-12-03 | 2013-05-28 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
| US8263479B2 (en) | 2002-12-03 | 2012-09-11 | Hamamatsu Photonics K.K. | Method for cutting semiconductor substrate |
| US8247734B2 (en) | 2003-03-11 | 2012-08-21 | Hamamatsu Photonics K.K. | Laser beam machining method |
| US8685838B2 (en) | 2003-03-12 | 2014-04-01 | Hamamatsu Photonics K.K. | Laser beam machining method |
| US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
| JP2006036602A (en) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | Ceramic member, method for manufacturing the same, and electronic component using the same |
| US7985458B2 (en) | 2006-10-31 | 2011-07-26 | Kyocera Corporation | Ceramic member, method of forming groove in ceramic member, and substrate for electronic part |
| JP2009018344A (en) * | 2007-06-15 | 2009-01-29 | Mitsubishi Electric Corp | Substrate processing method |
| JP2009056467A (en) * | 2007-08-29 | 2009-03-19 | Hamamatsu Photonics Kk | Apparatus and method for laser beam machining |
| WO2010135616A2 (en) | 2009-05-21 | 2010-11-25 | Corning Incorporated | Method for separating a sheet of brittle material |
| EP2432616A4 (en) * | 2009-05-21 | 2015-02-11 | Corning Inc | Method for separating a sheet of brittle material |
| JP2013043193A (en) * | 2011-08-23 | 2013-03-04 | Furukawa Electric Co Ltd:The | Method for processing ceramic substrate by laser beam |
| WO2020012909A1 (en) * | 2018-07-11 | 2020-01-16 | 日本電信電話株式会社 | Method for forming groove in hybrid optical device, and hybrid optical device |
| JP7043999B2 (en) | 2018-07-11 | 2022-03-30 | 日本電信電話株式会社 | Groove fabrication method for hybrid optical devices and hybrid optical devices |
| US11372159B2 (en) | 2018-07-11 | 2022-06-28 | Nippon Telegraph And Telephone Corporation | Method for forming groove in hybrid optical device, and hybrid optical device |
| JP2020008778A (en) * | 2018-07-11 | 2020-01-16 | 日本電信電話株式会社 | Groove fabrication method for hybrid optical device and hybrid optical device |
| CN115461179A (en) * | 2020-04-28 | 2022-12-09 | Iti株式会社 | Ceramic cutting method and ceramic cutting equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5543365A (en) | Wafer scribe technique using laser by forming polysilicon | |
| JP2000323441A (en) | Cutting method of optical waveguide circuit chip formed on ceramic substrate | |
| TWI260843B (en) | Focusing an optical beam to two foci | |
| CN1788916B (en) | Laser segmented cutting | |
| US6841482B2 (en) | Laser machining of semiconductor materials | |
| US6541730B2 (en) | Method and apparatus for cutting a non-metal substrate by using a laser beam | |
| US7682858B2 (en) | Wafer processing method including formation of a deteriorated layer | |
| JP4838531B2 (en) | Plate cutting method and laser processing apparatus | |
| US20050101108A1 (en) | Semiconductor wafer dividing method | |
| US20020170896A1 (en) | Method and apparatus for cutting a non-metallic substrate using a laser beam | |
| US20020170891A1 (en) | Laser machining system and method | |
| US7015118B2 (en) | Method for forming a scribe line on a semiconductor device and an apparatus for forming the scribe line | |
| KR20170055909A (en) | METHOD OF SEPARATING SiC SUBSTRATE | |
| CN107835794A (en) | Method for continuous manufacture of holes in flexible substrate sheet and products related thereto | |
| US20060009008A1 (en) | Method for the laser processing of a wafer | |
| WO2003002289A1 (en) | Multistep laser processing of wafers supporting surface device layers | |
| JP2001064029A (en) | Multilayer glass substrate and cutting method thereof | |
| JP2003002677A (en) | Laser cleaving support table, laser cleaving apparatus, laser cleaving method, and liquid crystal panel manufacturing method | |
| TWI292352B (en) | ||
| KR20180068871A (en) | Method for manufacturing an interposer | |
| WO2004014625A1 (en) | Method and device for scribing fragile material substrate | |
| JPWO2003013816A1 (en) | Method and apparatus for scribing brittle material substrate | |
| JP2000117471A (en) | Glass processing method and apparatus | |
| KR20180068862A (en) | Method of manufacturing a interposer | |
| JP2004035315A (en) | Method and apparatus for dividing brittle material substrates |