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JP2000216193A - Flip chip connection structure and connection method - Google Patents

Flip chip connection structure and connection method

Info

Publication number
JP2000216193A
JP2000216193A JP11018428A JP1842899A JP2000216193A JP 2000216193 A JP2000216193 A JP 2000216193A JP 11018428 A JP11018428 A JP 11018428A JP 1842899 A JP1842899 A JP 1842899A JP 2000216193 A JP2000216193 A JP 2000216193A
Authority
JP
Japan
Prior art keywords
semiconductor device
flip
chip connection
adhesive
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11018428A
Other languages
Japanese (ja)
Other versions
JP3514649B2 (en
Inventor
Yasuhiro Sakamoto
泰宏 坂本
Koji Matsubara
浩司 松原
Keiji Yamamura
圭司 山村
Yoshihisa Totsuta
義久 土津田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP01842899A priority Critical patent/JP3514649B2/en
Publication of JP2000216193A publication Critical patent/JP2000216193A/en
Application granted granted Critical
Publication of JP3514649B2 publication Critical patent/JP3514649B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】 接着剤によるボンディングツールの破損や平
坦度の悪化等の生産性における問題を解決することがで
きる、フリップチップ接続構造および接続方法を提供す
る。 【解決手段】 接着剤３０を用いたフリップチップ接続
構造において、側面を多段形状とした半導体装置１１０
を用いて、半導体装置１１０と回路基板２０とを接続す
る。また、接着剤を用いたフリップチップ接続方法にお
いて、ボンディングツールと半導体装置との間に、留置
部材もしくは多層構造からなる介在部材を介して、半導
体装置と回路基板とを加熱接続し、接続工程後に必要に
応じて介在部材を破壊もしくは剥離して除去する。 PROBLEM TO BE SOLVED: To provide a flip-chip connection structure and a connection method capable of solving problems in productivity such as breakage of a bonding tool and deterioration of flatness due to an adhesive. SOLUTION: In a flip chip connection structure using an adhesive 30, a semiconductor device 110 having a multi-stage side surface.
Is used to connect the semiconductor device 110 to the circuit board 20. In the flip-chip connection method using an adhesive, the semiconductor device and the circuit board are heated and connected between the bonding tool and the semiconductor device via an indwelling member or an intervening member having a multilayer structure. If necessary, the intervening member is broken or peeled and removed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、フリップチップ接
続構造および接続方法に関するものであり、特に、半導
体装置等の電子部品を回路基板上の配線パターンに実装
するフリップチップ接続構造および接続方法に関するも
のである。The present invention relates to a flip-chip connection structure and a connection method, and more particularly to a flip-chip connection structure and a connection method for mounting an electronic component such as a semiconductor device on a wiring pattern on a circuit board. It is.

【０００２】[0002]

【従来の技術】図１９は、従来の異方性導電接着剤等を
用いた半導体装置を回路基板上に直接実装するフリップ
チップ接続構造および接続方法を示す断面図である。2. Description of the Related Art FIG. 19 is a cross-sectional view showing a flip-chip connection structure and a connection method for directly mounting a semiconductor device using a conventional anisotropic conductive adhesive or the like on a circuit board.

【０００３】図１９（Ａ）を参照して、まず、加熱加圧
機構を有するボンディングツール７０を用いて、側面が
平滑な半導体装置１０の裏面を真空吸着して固定し、半
導体装置１０の電極１２と、回路基板２０の電極２１と
の位置合わせを行なう。このとき、回路基板２０の実装
領域には、導電粒子３２を含む樹脂３１からなる異方性
導電接着剤３０を予め塗布しておく。Referring to FIG. 19A, first, using a bonding tool 70 having a heating and pressurizing mechanism, the back surface of semiconductor device 10 having a smooth side surface is fixed by vacuum suction, and the electrode of semiconductor device 10 is fixed. 12 and the electrode 21 of the circuit board 20 are aligned. At this time, an anisotropic conductive adhesive 30 made of a resin 31 containing conductive particles 32 is applied in advance to the mounting area of the circuit board 20.

【０００４】次に、図１９（Ｂ）を参照して、半導体装
置１０を吸着させたボンディングツール７０を降下し、
半導体装置１０に形成された突起電極１２と、対応する
回路基板２０の電極２１との間に異方性導電接着剤３０
中の導電粒子３２を介在させることにより、電気的な接
続を行なう。同時に、ボンディングツール７０を加熱し
て異方性導電接着剤３０を硬化し、機械的な接続と封止
とを行なう。このとき、異方性導電接着剤３０は、実装
領域の周辺部に押し拡げられて半導体装置１０の側面に
濡れ拡がり、フィレット３３を形成し、機械的強度を強
固にする。Next, referring to FIG. 19B, the bonding tool 70 holding the semiconductor device 10 is lowered, and
An anisotropic conductive adhesive 30 is provided between the protruding electrode 12 formed on the semiconductor device 10 and the corresponding electrode 21 of the circuit board 20.
Electrical connection is made by interposing the conductive particles 32 therein. At the same time, the bonding tool 70 is heated to harden the anisotropic conductive adhesive 30, and mechanical connection and sealing are performed. At this time, the anisotropic conductive adhesive 30 is pushed and spread to the peripheral portion of the mounting area and spreads on the side surface of the semiconductor device 10 to form a fillet 33, thereby strengthening the mechanical strength.

【０００５】[0005]

【発明が解決しようとする課題】上述したような従来の
フリップチップ接続構造および接続方法では、異方性導
電接着剤３０が、実装領域の周辺部に押し拡げられて半
導体装置の側面に濡れ拡がり、フィレットを形成する
が、側面の平滑な半導体装置１０では、接続工程におい
て、異方性導電接着剤３０が半導体装置１０の側面を這
い上がりやすい。In the above-described conventional flip-chip connection structure and connection method, the anisotropic conductive adhesive 30 is pushed and spread on the periphery of the mounting area and spreads on the side surface of the semiconductor device. Although the fillet is formed, in the semiconductor device 10 having a smooth side surface, the anisotropic conductive adhesive 30 tends to crawl up the side surface of the semiconductor device 10 in the connection step.

【０００６】また、ＩＣカードに用いる厚さが５０〜１
００μｍの薄型の半導体装置１０の場合にも、半導体装
置１０の側面で、フィレット３３の上端が止まらないこ
とが多い。The thickness used for an IC card is 50 to 1
Even in the case of the thin semiconductor device 10 of 00 μm, the upper end of the fillet 33 often does not stop on the side surface of the semiconductor device 10.

【０００７】さらに、異方性導電接着剤３０を塗布後
に、該接着剤３０を押し拡げながら半導体装置１０の電
極１２と基板２０の電極２１とを当接する作業において
は、該接着剤３０の流れ方向を制御することは非常に困
難であり、半導体装置１０全周にわたって該接着剤３０
が均一に流出するように半導体装置１０を押圧すること
は極めて難しく、偏って多量の接着剤３０が流出するこ
とが多い。Further, after the application of the anisotropic conductive adhesive 30, the electrode 12 of the semiconductor device 10 and the electrode 21 of the substrate 20 are brought into contact with each other while the adhesive 30 is being spread. It is very difficult to control the direction, and the adhesive 30
It is extremely difficult to press the semiconductor device 10 so as to flow out uniformly, and a large amount of the adhesive 30 flows out unevenly in many cases.

【０００８】これらの結果として、図２０に示すよう
に、異方性導電接着剤３０が半導体装置１０の側面を這
い上がり、半導体装置１０を裏面から加熱加圧するボン
ディングツール７０に付着して、硬化することがあっ
た。As a result, as shown in FIG. 20, the anisotropic conductive adhesive 30 creeps up on the side surface of the semiconductor device 10, adheres to the bonding tool 70 for heating and pressing the semiconductor device 10 from the back surface, and cures. There was something to do.

【０００９】そのため、ボンディングツール７０が破損
したり、ツールヘッドが接着剤３０によって汚染され
て、平坦度が悪化する等の問題を生じていた。As a result, problems such as breakage of the bonding tool 70, contamination of the tool head by the adhesive 30, and deterioration of flatness have occurred.

【００１０】一方、特開平９−３２６３７３号公報等で
は、半導体装置能動面や裏面のチッピング防止のため、
ベベルカット法とステップカット法とを採り入れたダイ
シング方法を提案している。この方法では、半導体装置
の側面が、半導体装置能動面に対して垂直な面だけでな
く、多段形状をも有する半導体装置を得ることができ
る。しかしながら、該手法では、段差が僅かしかない。
そのため、これらの半導体装置を用いて異方性導電接着
剤でフリップチップ接続を行なった場合、接続工程にお
いて異方性導電接着剤は、実装領域の周辺部に押し拡げ
られて半導体装置の側面に濡れ拡がり、フィレットを形
成する。この際、フィレットの高さ方向の濡れ拡がりを
抑制する安定した効果は発揮できない。特に、液状の異
方性導電接着剤等では、微量塗布の再現性が低く、ディ
スペンス時の気泡の巻込みは回避できない。そのため、
適量よりも多めに塗布して異方性導電接着剤の不足を防
止する。このとき、僅かな段差では、過剰な異方性導電
接着剤を溜める容量が不足する。そのため、上述の問題
点を解決することはできない。On the other hand, in Japanese Patent Application Laid-Open No. 9-326373, etc., in order to prevent chipping of the active surface and the back surface of the semiconductor device,
A dicing method that adopts the bevel cut method and the step cut method is proposed. According to this method, it is possible to obtain a semiconductor device having not only a side surface perpendicular to the active surface of the semiconductor device but also a multi-stage shape. However, in this method, there are only a few steps.
Therefore, when flip-chip connection is performed with an anisotropic conductive adhesive using these semiconductor devices, the anisotropic conductive adhesive is pushed out to the peripheral portion of the mounting area in the connecting step, and is applied to the side surface of the semiconductor device. Spreads wet to form fillets. In this case, a stable effect of suppressing the spread of the fillet in the height direction cannot be exhibited. In particular, in the case of a liquid anisotropic conductive adhesive or the like, reproducibility of a small amount of coating is low, and entrainment of air bubbles during dispensing cannot be avoided. for that reason,
Apply more than an appropriate amount to prevent shortage of the anisotropic conductive adhesive. At this time, if the step is small, the capacity for storing an excessive anisotropic conductive adhesive is insufficient. Therefore, the above problem cannot be solved.

【００１１】また、液晶ディスプレイのドライバＩＣ等
の異方性導電フィルムを用いたフリップチップ実装にお
いては、本硬化の前にボンディングツールと半導体装置
との間に、接着剤が付着し難いテトラフルオロエチレン
フィルム等を供給して介在させ、接着剤の本硬化後、介
在フィルムを除去し、ボンディングツールへの接着剤付
着を防止するフリップチップ接続方法がよく知られてい
る。しかしながら、液状の異方性導電接着剤の場合、介
在フィルムに付着する接着剤が増加するために、容易に
剥がすことができず、さらに、薄型のＩＣを接続する場
合、介在フィルムを剥がす際に半導体装置を破損するた
め、生産歩留まりを著しく低下させる等の問題が生じて
いた。Also, in flip-chip mounting using an anisotropic conductive film such as a driver IC of a liquid crystal display, tetrafluoroethylene in which an adhesive is unlikely to adhere between a bonding tool and a semiconductor device before full curing. A flip chip connection method is known in which a film or the like is supplied and interposed, and after the adhesive is fully cured, the intervening film is removed to prevent adhesion of the adhesive to a bonding tool. However, in the case of a liquid anisotropic conductive adhesive, the amount of adhesive adhering to the intervening film is increased, so that it cannot be easily peeled off. Since the semiconductor device is damaged, problems such as a remarkable decrease in production yield have occurred.

【００１２】[0012]

【課題を解決するための手段】請求項１の発明によるフ
リップチップ接続構造は、半導体装置を、導電性部材を
介して回路基板上の配線部分と電気的に接続し、接着剤
を用いて回路基板に固着する、フリップチップ接続構造
であって、半導体装置の側面に、厚さ方向に沿って多段
形状を設けたことを特徴とする。According to a first aspect of the present invention, there is provided a flip-chip connection structure in which a semiconductor device is electrically connected to a wiring portion on a circuit board via a conductive member, and a circuit is formed using an adhesive. A flip-chip connection structure fixed to a substrate, wherein a multi-stage shape is provided along a thickness direction on a side surface of the semiconductor device.

【００１３】請求項２の発明によるフリップチップ接続
構造は、請求項１の発明の構成において、多段形状は、
接着剤が塗布される半導体装置の能動面の周縁に沿って
形成された窪み部を有することを特徴とする。The flip-chip connection structure according to the second aspect of the present invention is the flip-chip connection structure according to the first aspect of the present invention, wherein:
The semiconductor device is characterized in that it has a recess formed along the periphery of the active surface of the semiconductor device to which the adhesive is applied.

【００１４】請求項３の発明によるフリップチップ接続
構造は、請求項１の発明の構成において、多段形状は、
接着剤が付着される半導体装置の裏面の周縁に沿って形
成された窪み部を有することを特徴とする。According to a third aspect of the present invention, there is provided a flip-chip connection structure according to the first aspect of the present invention, wherein:
The semiconductor device has a recess formed along the periphery of the back surface of the semiconductor device to which the adhesive is attached.

【００１５】請求項４の発明によるフリップチップ接続
構造は、請求項１の発明の構成において、多段形状は、
半導体装置主面方向の段付き幅が３０μｍ以上であるこ
とを特徴とする。According to a fourth aspect of the present invention, there is provided a flip-chip connection structure according to the first aspect of the present invention, wherein
The step width in the main surface direction of the semiconductor device is 30 μm or more.

【００１６】請求項５の発明によるフリップチップ接続
構造は、半導体装置を、導電性部材を介して回路基板上
の配線部分と電気的に接続し、接着剤を用いて回路基板
に固着する、フリップチップ接続構造であって、半導体
装置の裏面に、半導体装置の裏面よりも大きな寸法を有
する接続部材が接続されたことを特徴とする。According to a fifth aspect of the present invention, there is provided a flip chip connection structure, wherein a semiconductor device is electrically connected to a wiring portion on a circuit board via a conductive member, and is fixed to the circuit board using an adhesive. A chip connection structure, wherein a connection member having a larger dimension than the back surface of the semiconductor device is connected to the back surface of the semiconductor device.

【００１７】請求項６の発明によるフリップチップ接続
構造は、半導体装置を、導電性部材を介して回路基板上
の配線部分と電気的に接続し、接着剤を用いて回路基板
に固着する、フリップチップ接続構造であって、半導体
装置の裏面に、半導体装置の裏面よりも小さな寸法を有
する接続部材が接続されたことを特徴とする。According to a sixth aspect of the present invention, there is provided a flip-chip connection structure, wherein a semiconductor device is electrically connected to a wiring portion on a circuit board via a conductive member, and is fixed to the circuit board using an adhesive. A chip connection structure, wherein a connection member having a smaller size than the back surface of the semiconductor device is connected to the back surface of the semiconductor device.

【００１８】請求項７の発明によるフリップチップ接続
構造は、請求項５または請求項６の発明の構成におい
て、半導体装置と接続部材との段付き幅が、３０μｍ以
上であることを特徴とする。A flip-chip connection structure according to a seventh aspect of the present invention is the flip-chip connection structure according to the fifth or sixth aspect, wherein a step width between the semiconductor device and the connection member is 30 μm or more.

【００１９】請求項８の発明によるフリップチップ接続
方法は、半導体装置を接着剤を用いて回路基板にフリッ
プチップ接続を行なう方法であって、ボンディングツー
ルヘッドと半導体装置との間に、留置部材を配設するス
テップと、留置部材を介して接着剤の加熱硬化を行なう
ステップとを備え、接着剤の硬化後も留置部材を留置す
ることを特徴とする。According to a eighth aspect of the present invention, there is provided a flip-chip connection method for connecting a semiconductor device to a circuit board by using an adhesive, wherein an indwelling member is provided between the bonding tool head and the semiconductor device. The method further comprises a step of disposing and a step of heating and curing the adhesive via the placement member, wherein the placement member is placed after the curing of the adhesive.

【００２０】請求項９の発明によるフリップチップ接続
方法は、半導体装置を接着剤を用いて回路基板にフリッ
プチップ接続を行なう方法であって、ボンディングツー
ルヘッドと半導体装置との間に、多層構造からなる部材
を配設するステップと、多層構造からなる部材を介して
接着剤の加熱硬化を行なうステップと、接着剤の硬化後
に部材の少なくとも一部を除去するステップとを備える
ことを特徴とする。According to a ninth aspect of the present invention, there is provided a flip-chip connection method for connecting a semiconductor device to a circuit board by using an adhesive, wherein a flip-chip connection is provided between the bonding tool head and the semiconductor device. A step of arranging a member, a step of heating and curing the adhesive through a member having a multilayer structure, and a step of removing at least a part of the member after the curing of the adhesive.

【００２１】請求項１０の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、ボンディン
グツールヘッドと半導体装置との間に多層構造からなる
部材を配置する前に、半導体装置を回路基板に仮留めす
るステップをさらに備えることを特徴とする。According to a tenth aspect of the present invention, in the flip-chip connection method according to the ninth aspect, the semiconductor device is connected to the circuit board before the member having the multilayer structure is arranged between the bonding tool head and the semiconductor device. The method further comprises the step of temporarily fixing to:

【００２２】請求項１１の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材の少なくとも１層の機械的強度が、接着剤の
硬化物および半導体装置の機械的強度よりも弱いことを
特徴とする。According to the eleventh aspect of the present invention, in the configuration of the ninth aspect, the mechanical strength of at least one layer of the member having a multilayer structure is the same as that of the cured adhesive and the mechanical strength of the semiconductor device. It is weaker than strength.

【００２３】請求項１２の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材の少なくとも１層が、脱着可能な粘着材層で
あることを特徴とする。A flip chip connection method according to a twelfth aspect of the present invention is the flip chip connection method according to the ninth aspect, wherein at least one layer of the member having a multilayer structure is a detachable adhesive layer.

【００２４】請求項１３の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材の、隣接する少なくとも２層間の層間接続強
度が、接着剤の硬化物および半導体装置の機械的強度よ
りも弱いことを特徴とする。A flip chip connection method according to a thirteenth aspect of the present invention is the flip chip connection method according to the ninth aspect, wherein the interlayer connection strength between at least two adjacent layers of a member having a multilayer structure is a cured product of an adhesive and a semiconductor device. Characterized in that it is weaker than the mechanical strength of

【００２５】請求項１４の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材を除去するステップは、部材の半導体装置に
接する層と、半導体装置の裏面との間で剥離することに
より、部材の少なくとも一部を除去することを特徴とす
る。According to a fourteenth aspect of the present invention, in the configuration of the ninth aspect, the step of removing the member having the multi-layer structure includes the step of removing the layer of the member that is in contact with the semiconductor device and the back surface of the semiconductor device. It is characterized in that at least a part of the member is removed by peeling between members.

【００２６】請求項１５の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材を除去するステップは、部材の半導体装置に
接する層を破壊することにより、部材の少なくとも一部
を除去することを特徴とする。According to a fifteenth aspect of the present invention, in the flip-chip connection method according to the ninth aspect of the invention, the step of removing the member having the multi-layered structure includes destroying a layer of the member in contact with the semiconductor device. It is characterized in that at least a part is removed.

【００２７】請求項１６の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材を除去するステップは、部材の隣接する少な
くとも２層間で剥離することにより、部材の少なくとも
一部を除去することを特徴とする。[0027] In the flip chip connection method according to the present invention, the step of removing the member having the multilayer structure in the structure of the invention according to the ninth aspect is such that the member is peeled off between at least two adjacent layers of the member. It is characterized in that at least a part is removed.

【００２８】請求項１７の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材を除去するステップは、部材の少なくとも１
層を破壊することにより、部材の少なくとも一部を除去
することを特徴とする。[0028] In the flip-chip connection method according to the seventeenth aspect of the present invention, in the configuration of the ninth aspect, the step of removing the member having the multilayer structure includes at least one of the members.
The method is characterized in that at least a part of the member is removed by breaking the layer.

【００２９】請求項１８の発明によるフリップチップ接
続方法は、請求項９の発明の構成において、多層構造か
らなる部材の半導体装置に接する面に、粉体、微小球
体、または粒状体を配設したことを特徴とする。The flip chip connection method according to the eighteenth aspect of the present invention is the flip chip connection method according to the ninth aspect of the present invention, wherein powder, microspheres, or granules are disposed on a surface of the member having a multilayer structure in contact with the semiconductor device. It is characterized by the following.

【００３０】[0030]

【発明の実施の形態】（実施の形態１）図１は、本発明
の実施の形態１に係る異方性導電接着剤を用いたフリッ
プチップ接続構造を示す断面図である。(Embodiment 1) FIG. 1 is a sectional view showing a flip-chip connection structure using an anisotropic conductive adhesive according to Embodiment 1 of the present invention.

【００３１】図１を参照して、このフリップチップ接続
構造は、矩形の半導体装置１１０の側面に、半導体装置
１１０の能動面の周縁に沿って窪み部が形成されてい
る。窪み部は、一例として段付き幅が３０μｍの段差１
１であり、半導体装置１１０の側面に形成される異方性
導電接着剤３０のフィレット３３は、段差１１によりせ
き止められている。このとき、回路基板２０上に形成し
た電極２１と、半導体装置１１０の電極上に形成した突
起電極１２との間には、異方性導電接着剤３０中の導電
粒子３２が介在して電気的な接続が行なわれ、同時に異
方性導電接着剤３０中の樹脂バインダ３１が硬化して、
機械的接続と封止とを行なっている。Referring to FIG. 1, in the flip chip connection structure, a recess is formed on the side surface of rectangular semiconductor device 110 along the periphery of the active surface of semiconductor device 110. The depression is, for example, a step 1 having a step width of 30 μm.
The fillet 33 of the anisotropic conductive adhesive 30 formed on the side surface of the semiconductor device 110 is blocked by the step 11. At this time, the conductive particles 32 in the anisotropic conductive adhesive 30 are interposed between the electrode 21 formed on the circuit board 20 and the protruding electrode 12 formed on the electrode of the semiconductor device 110, thereby providing electrical connection. Connection is performed, and at the same time, the resin binder 31 in the anisotropic conductive adhesive 30 is cured,
Performs mechanical connection and sealing.

【００３２】図２は、図１に示す半導体装置１１０の側
面に、段差１１を形成する方法を説明するための断面図
である。FIG. 2 is a sectional view for explaining a method of forming the step 11 on the side surface of the semiconductor device 110 shown in FIG.

【００３３】図２（Ａ）を参照して、シート５０に貼り
付けられたウエハ４０からダイシングして半導体装置１
１０を得る際に、まず、ブレード６０により、ウエハ４
０の厚さよりも浅いところまで切込み、ウエハ４０に溝
１１ａを形成する。Referring to FIG. 2A, semiconductor device 1 is diced from wafer 40 attached to sheet 50.
When obtaining the wafer 10, first, the wafer 60 is
The groove 11a is formed in the wafer 40 by cutting into a position shallower than the thickness of 0.

【００３４】次に、図２（Ｂ）を参照して、ブレード６
０よりも薄いブレード６１を用いて、溝１１ａ上からさ
らにシート５０にまで及ぶ溝１１ｂを形成する。この工
程をＸＹ２方向について行なうことにより、ダイシング
工程を完了する。このようにして、ウエハ４０から切り
分けられた半導体装置１１０の側面は、段差１１を有し
ている。Next, referring to FIG.
Using a blade 61 thinner than 0, a groove 11b extending from above the groove 11a to the sheet 50 is formed. The dicing step is completed by performing this step in the X and Y directions. Thus, the side surface of the semiconductor device 110 cut from the wafer 40 has the step 11.

【００３５】図３は、実施の形態１に係るフリップチッ
プ接続方法を示す断面図である。まず、図３（Ａ）を参
照して、図２のシート５０をエキスパンドして半導体装
置１１０を取出し、半導体装置１１０の能動面の電極上
に、ワイヤボンダを使用してＡｕワイヤを用いてボール
バンピング法により、Ａｕバンプからなる突起電極１２
を形成する。FIG. 3 is a sectional view showing a flip chip connection method according to the first embodiment. First, referring to FIG. 3 (A), the semiconductor device 110 is taken out by expanding the sheet 50 of FIG. 2, and ball bumping is performed on an electrode on an active surface of the semiconductor device 110 using an Au wire using a wire bonder. Electrode 12 made of Au bump
To form

【００３６】次に、図３（Ｂ）を参照して、突起電極１
２が形成された半導体装置１１０をボンディングツール
７０に真空吸着して、レベリングステージ８０の上に押
さえつけて、突起電極１２のレベリングを行なう。Next, referring to FIG.
The semiconductor device 110 on which the semiconductor device 2 is formed is vacuum-sucked to the bonding tool 70 and pressed on the leveling stage 80 to level the protruding electrodes 12.

【００３７】なお、電解および無電解めっき法等による
突起電極形成も可能である。次に、図３（Ｃ）を参照し
て、樹脂バインダ３１中にＮｉ導電粒子３２を分散させ
てなる液状の異方性導電接着剤３０を予め塗布した回路
基板２０と、ボンディングツール７０に真空吸着された
半導体装置１１０の能動面とを向かい合わせた状態、つ
まりフェイスダウン姿態で、半導体装置１１０と回路基
板２０との位置合わせを行なう。It is also possible to form a protruding electrode by electrolytic or electroless plating. Next, referring to FIG. 3 (C), a vacuum is applied to the circuit board 20 on which the liquid anisotropic conductive adhesive 30 in which the Ni conductive particles 32 are dispersed in the resin binder 31 is applied in advance, and the bonding tool 70. The semiconductor device 110 and the circuit board 20 are aligned in a state where the active surface of the semiconductor device 110 is faced, that is, in a face-down state.

【００３８】次に、図３（Ｄ）を参照して、ボンディン
グツール７０を降下させ、半導体装置１１０の能動面で
異方性導電接着剤３０を押し拡げながら突起電極１２と
基板電極２０とを当接せしめる。半導体装置１１０から
はみ出した異方性導電接着剤３０は、半導体装置１１０
の側面の段差１１でせき止まる。そして、段差１１のと
ころまででフィレット３３が形成される。続いて、ボン
ディングツール７０を加熱加圧し、異方性導電接着剤３
０中の樹脂バインダ３１を硬化させて、接続工程を完了
する。Next, referring to FIG. 3 (D), the bonding tool 70 is lowered, and while the anisotropic conductive adhesive 30 is pushed and spread on the active surface of the semiconductor device 110, the projecting electrode 12 and the substrate electrode 20 are connected. Make contact. The anisotropic conductive adhesive 30 protruding from the semiconductor device 110
Stop at the step 11 on the side surface of. Then, a fillet 33 is formed up to the step 11. Subsequently, the bonding tool 70 is heated and pressed, and the anisotropic conductive adhesive 3 is applied.
The connection process is completed by curing the resin binder 31 in the middle.

【００３９】この実施の形態１においては、半導体装置
１１０の裏面に配置するボンディングツール７０にまで
異方性導電接着剤３０が及ぶことはなく、付着すること
がないため、前述した問題は起こらない。In the first embodiment, since the anisotropic conductive adhesive 30 does not reach the bonding tool 70 disposed on the back surface of the semiconductor device 110 and does not adhere thereto, the above-described problem does not occur. .

【００４０】また、この実施の形態１においては、毛細
管現象により、半導体装置１１０の段差１１のエッジが
延びる方向、つまり、水平方向に段差エッジに沿って異
方性導電接着剤３０が漏れ拡がる。そのため、塗布もし
くは這い上がりに偏りがあっても、ボリュームの偏りが
ほとんどない状態でフィレットが形成される。その結
果、安定した実装構造を実現できるため、信頼性上の品
質のばらつきを小さく抑えることができる。In the first embodiment, the anisotropic conductive adhesive 30 leaks and spreads along the step edge in the direction in which the edge of the step 11 of the semiconductor device 110 extends, that is, in the horizontal direction, due to the capillary phenomenon. Therefore, even if the application or creeping up is uneven, the fillet is formed in a state where the volume is hardly uneven. As a result, since a stable mounting structure can be realized, a variation in quality in reliability can be suppressed.

【００４１】なお、本発明は、上記実施の形態１によっ
て限定されるものではなく、図４に示すように、半導体
装置２１０の側面の段差１１を２つ以上設けてもよい。
この場合、接着剤３０の不均一な流れによる不具合を、
より高い信頼度で防止することができる。The present invention is not limited to the first embodiment. As shown in FIG. 4, two or more steps 11 on the side surface of the semiconductor device 210 may be provided.
In this case, the problem caused by the uneven flow of the adhesive 30 is as follows.
It can be prevented with higher reliability.

【００４２】また、図５に示すように、半導体装置３１
０の側面に凸部を設けたり、図６に示すように、半導体
装置４１０の側面に凹部を設けたりしてもよい。これら
は、接着剤３０の混入を阻止する部分と溜まる部分と
を、交互に設けることにより安定性を高めたものであ
る。Further, as shown in FIG.
A protrusion may be provided on the side surface of the semiconductor device 410, or a recess may be provided on the side surface of the semiconductor device 410 as shown in FIG. These have improved stability by alternately providing portions that prevent the adhesive 30 from being mixed and portions that accumulate.

【００４３】また、図１に示す実施の形態１では、半導
体装置１１０の裏面側の面積を大きくして段差１１を形
成しているが、図７に示すように、能動面側を大きくす
ることもできる。この場合、段差のエッジ部で、エッジ
が延びる水平方向に異方性導電接着剤３０が拡がる。ま
た、段付きの水平方向の平坦部に、異方性導電接着剤３
０が溜まる。そのため、接着剤３０は垂直方向には拡が
り難く、同様にボンディングツールへの付着を防止する
ことができる。Also, in the first embodiment shown in FIG. 1, the step 11 is formed by increasing the area of the back surface of the semiconductor device 110, but as shown in FIG. Can also. In this case, at the edge of the step, the anisotropic conductive adhesive 30 spreads in the horizontal direction in which the edge extends. An anisotropic conductive adhesive 3 is provided on the stepped horizontal flat portion.
0 accumulates. Therefore, the adhesive 30 is unlikely to spread in the vertical direction, and similarly, it can be prevented from adhering to the bonding tool.

【００４４】また、異方性導電接着剤３０は、異方性導
電フィルムでもよく、さらに、電気的接続を単に電極同
士の圧接やはんだ接続、Ａｕ−Ｓｎ、Ａｕ−Ａｌ、Ａｕ
−Ａｕ接続で行なうこともできる。この場合、異方性導
電接着剤３０の代わりに、液状の熱硬化性樹脂やフィル
ム状の熱硬化性樹脂、熱可塑性樹脂を挟んだ状態でフリ
ップチップ接続を行ない、同様の効果が得られる。The anisotropic conductive adhesive 30 may be an anisotropic conductive film. Further, the electrical connection may be made simply by pressure contact between electrodes or solder connection, Au-Sn, Au-Al, Au.
-Au connection can also be used. In this case, instead of the anisotropic conductive adhesive 30, flip-chip connection is performed in a state where a liquid thermosetting resin, a film-shaped thermosetting resin, or a thermoplastic resin is sandwiched, and the same effect can be obtained.

【００４５】（実施の形態２）図８は、本発明の実施の
形態２に係る異方性導電接着剤を用いたフリップチップ
接続構造を示す断面図である。(Embodiment 2) FIG. 8 is a sectional view showing a flip-chip connection structure using an anisotropic conductive adhesive according to Embodiment 2 of the present invention.

【００４６】図８を参照して、このフリップチップ接続
構造では、矩形の半導体装置１０の裏面に、半導体装置
１０の裏面面積よりも大きな寸法を有する阻止部材１１
４を接着剤で張り付けて段差１１を設けている。本実施
の形態では、部材１１４は銅板からなるが、他の材質で
あっても差し支えない。この実施の形態２においては、
半導体装置１０の側面に形成される異方性導電接着剤３
０のフィレット３３は、段差１１でせき止まる。このと
き、回路基板２０上に形成した電極２１と、半導体装置
１０の電極上に形成した突起電極１２との間には、異方
性導電接着剤３０中の導電粒子３２が介在して、電気的
な接続が行なわれる。また、同時に、異方性導電接着剤
３０中の樹脂バインダ３１が硬化して、機械的接続と封
止とを行なっている。Referring to FIG. 8, in the flip-chip connection structure, blocking member 11 having a size larger than the back surface area of semiconductor device 10 is provided on the back surface of rectangular semiconductor device 10.
4 is stuck with an adhesive to form a step 11. In the present embodiment, the member 114 is made of a copper plate, but may be made of another material. In the second embodiment,
Anisotropic conductive adhesive 3 formed on side surface of semiconductor device 10
The zero fillet 33 stops at the step 11. At this time, the conductive particles 32 in the anisotropic conductive adhesive 30 are interposed between the electrode 21 formed on the circuit board 20 and the protruding electrode 12 formed on the electrode of the semiconductor device 10, and Connection is made. At the same time, the resin binder 31 in the anisotropic conductive adhesive 30 is hardened to perform mechanical connection and sealing.

【００４７】なお、本発明は、上述した実施の形態２に
よって限定されるものではなく、図９または図１０に示
すように、半導体装置１０の裏面に段差１１を有するよ
うに、材料２１４、４１４を張り合わせてもよい。ま
た、図１１または図１２に示すように、２枚以上の平板
３１４ａ、３１４ｂ、５１４ａ、５１４ｂからなる材料
３１４、３１５を接続して、２つ以上の段差を設けても
よい。さらに、図８に示す実施の形態２では、半導体装
置１０の裏面に半導体装置１０の裏面面積よりも大きな
面積を有する銅板１１４を接着して形成しているが、図
１３に示すように、半導体装置１０の裏面面積よりも小
さな銅板６１４を接着して得た半導体装置１０を用いる
こともできる。この場合、段差のエッジ部でエッジが延
びる水平方向に、毛細管現象により異方性導電接着剤３
０が拡がって、段差平坦部に異方性導電接着剤３０が溜
まるため、垂直方向には拡がり難く、同様にボンディン
グツールへの付着を防止することができる。It should be noted that the present invention is not limited to the above-described second embodiment. As shown in FIG. 9 or FIG. May be bonded together. Further, as shown in FIG. 11 or FIG. 12, two or more flat plates 314a, 314b, 514a, 514b may be connected to materials 314, 315 to provide two or more steps. Further, in the second embodiment shown in FIG. 8, a copper plate 114 having an area larger than the area of the back surface of the semiconductor device 10 is bonded to the back surface of the semiconductor device 10, but as shown in FIG. The semiconductor device 10 obtained by bonding a copper plate 614 smaller than the back surface area of the device 10 can also be used. In this case, the anisotropic conductive adhesive 3 is formed in the horizontal direction in which the edge extends at the edge of the step by capillary action.
Since 0 expands and the anisotropic conductive adhesive 30 accumulates on the flat portion of the step, it does not easily spread in the vertical direction, and similarly, the adhesion to the bonding tool can be prevented.

【００４８】また、半導体装置１０の裏面に接続する材
料は銅板に限らず、その他の金属、合金、有機材料、無
機材料を用いた場合でも、同様の効果が得られる。ま
た、異方性導電接着剤３０は、異方性導電フィルムでも
よく、さらに電気的接続を単に電極同士の圧接やはんだ
接続、Ａｕ−Ｓｎ、Ａｕ−Ａｌ、Ａｕ−Ａｕ接続で行な
うこともできる。この場合、異方性導電接着剤３０の代
わりに、液状の熱硬化性樹脂やフィルム状の熱硬化性樹
脂、熱可塑性樹脂等を挟んだ状態でフリップチップ接続
を行ない、同様の効果が得られる。The material connected to the back surface of the semiconductor device 10 is not limited to a copper plate, and the same effect can be obtained when other metals, alloys, organic materials, and inorganic materials are used. Further, the anisotropic conductive adhesive 30 may be an anisotropic conductive film, and the electrical connection can be performed simply by pressure welding between electrodes, solder connection, Au-Sn, Au-Al, Au-Au connection. . In this case, instead of the anisotropic conductive adhesive 30, a flip-chip connection is performed in a state where a liquid thermosetting resin, a film-shaped thermosetting resin, a thermoplastic resin, or the like is sandwiched, and a similar effect is obtained. .

【００４９】（実施の形態３）図１４は、本発明の実施
の形態３に係る異方性導電接着剤を用いたフリップチッ
プ接続方法を示す断面図である。(Embodiment 3) FIG. 14 is a sectional view showing a flip chip connection method using an anisotropic conductive adhesive according to Embodiment 3 of the present invention.

【００５０】図１４（Ａ）を参照して、このフリップチ
ップ接続方法では、まず、矩形の半導体装置１０の裏面
に貫通孔１９１を有するポリイミドフィルム１９０を介
在させた状態で、加熱加圧機構を有するボンディングツ
ール７０によって、半導体装置１０が真空吸着されてい
る。Referring to FIG. 14A, in this flip chip connection method, first, a heating and pressing mechanism is provided with a polyimide film 190 having a through hole 191 interposed on the back surface of rectangular semiconductor device 10. The semiconductor device 10 is vacuum-sucked by the bonding tool 70.

【００５１】ボンディングステージ８０上の回路基板２
０には、樹脂バインダ３１中にＮｉ導電粒子３２を分散
させてなる液状の異方性導電接着剤３０を、予め塗布し
てある。Circuit board 2 on bonding stage 80
In the case of No. 0, a liquid anisotropic conductive adhesive 30 in which Ni conductive particles 32 are dispersed in a resin binder 31 is applied in advance.

【００５２】ボンディングツール７０に真空吸着された
半導体装置１０の能動面を、回路基板２０と向かい合わ
せた状態、すなわちフェイスダウン姿態で、半導体装置
１０と回路基板２０との位置合わせを行なう。The semiconductor device 10 and the circuit board 20 are aligned with the active surface of the semiconductor device 10 vacuum-adsorbed on the bonding tool 70 facing the circuit board 20, that is, in a face-down state.

【００５３】このとき、半導体装置１０の電極上には、
Ａｕワイヤを用いたボールバンピング法によって形成し
たＡｕバンプが、突起電極１２として形成されている。
必要に応じて、突起電極１２の先端の平坦化を行なって
もよい。なお、電解および無電解めっき法等による突起
電極の形成も可能である。At this time, on the electrodes of the semiconductor device 10,
An Au bump formed by a ball bumping method using an Au wire is formed as the bump electrode 12.
If necessary, the tip of the protruding electrode 12 may be flattened. In addition, it is also possible to form a protruding electrode by electrolytic or electroless plating.

【００５４】次に、図１４（Ｂ）に示すように、ボンデ
ィングツール７０を降下し、半導体装置１０の能動面で
異方性導電接着剤３０を押し拡げながら、突起電極１２
と基板電極２１とを当接せしめる。Next, as shown in FIG. 14B, the bonding tool 70 is lowered, and while the anisotropic conductive adhesive 30 is pushed and spread on the active surface of the semiconductor device 10, the projecting electrode 12 is pressed.
And the substrate electrode 21 are brought into contact with each other.

【００５５】半導体装置１０からはみ出した異方性導電
接着剤３０は、半導体装置１０の側面に濡れ拡がり、介
在部材のポリイミドフィルム１９０によってせき止ま
り、フィレット３３が形成される。The anisotropic conductive adhesive 30 which has protruded from the semiconductor device 10 spreads on the side surface of the semiconductor device 10 and is stopped by the polyimide film 190 as an intervening member, so that the fillet 33 is formed.

【００５６】次に、ボンディングツール７０によって加
熱加圧し、異方性導電接着剤３０中の樹脂バインダ３１
を硬化させて、接続工程を完了する。Next, heat and pressure are applied by the bonding tool 70, and the resin binder 31 in the anisotropic conductive adhesive 30 is
To complete the connection process.

【００５７】このようにして、図１４（Ｃ）に示すよう
なフリップチップ接続構造が得られる。Thus, a flip chip connection structure as shown in FIG. 14C is obtained.

【００５８】このとき、ボンディングツール７０に異方
性導電接着剤３０は及ばず、したがって、付着すること
はないため、ボンディングツール７０を破損させること
もない。At this time, the anisotropic conductive adhesive 30 does not reach the bonding tool 70 and therefore does not adhere thereto, so that the bonding tool 70 is not damaged.

【００５９】また、フリップチップ接続後に介在部材１
９０を剥がす工程を伴わないため、接続部の不良や半導
体装置の破損の発生も防止することができる。After the flip chip connection, the intervening member 1
Since the step of peeling 90 is not involved, it is possible to prevent the failure of the connection portion and the damage of the semiconductor device.

【００６０】なお、本発明は、上述した実施の形態３に
限定されるものではなく、介在部材１９０は、ポリイミ
ドフィルムの他にテトラフルオロエチレンフィルムや金
属ホイルでもよく、特に金属ホイルの場合は電磁的な遮
蔽効果や放熱効果も期待できる。The present invention is not limited to Embodiment 3 described above, and the intervening member 190 may be a tetrafluoroethylene film or a metal foil in addition to the polyimide film. An effective shielding effect and heat dissipation effect can also be expected.

【００６１】また、本実施の形態では、貫通孔１９１を
有する介在部材１９０を用いて、半導体装置１０と同時
にボンディングツール７０に真空吸着したが、予め半導
体装置裏面に介在部材を接着しておけば貫通孔は必要な
い。Further, in this embodiment, the interposed member 190 having the through hole 191 is vacuum-adsorbed to the bonding tool 70 at the same time as the semiconductor device 10, but if the interposed member is bonded in advance to the back surface of the semiconductor device. No through holes are required.

【００６２】また、異方性導電接着剤３０は、異方性導
電フィルムでもよく、さらに電気的接続を単に電極同士
の圧接やはんだ接続、Ａｕ−Ｓｎ、Ａｕ−Ａｌ、Ａｕ−
Ａｕ接続等で行なうこともできる。この場合、異方性導
電接着剤３０の代わりに、液状の熱硬化性樹脂やフィル
ム状の熱硬化性樹脂、熱可塑性樹脂等を挟んだ状態でフ
リップチップ接続を行ない、同様の効果が得られる。The anisotropic conductive adhesive 30 may be an anisotropic conductive film. Further, the electrical connection may be made simply by pressure contact between electrodes or solder connection, Au-Sn, Au-Al, Au-
Au connection or the like can also be used. In this case, instead of the anisotropic conductive adhesive 30, a flip-chip connection is performed in a state where a liquid thermosetting resin, a film-shaped thermosetting resin, a thermoplastic resin, or the like is sandwiched, and a similar effect is obtained. .

【００６３】（実施の形態４）図１５は、本発明の実施
の形態４に係る異方性導電接着剤を用いたフリップチッ
プ接続方法を示す断面図である。(Embodiment 4) FIG. 15 is a cross-sectional view showing a flip-chip connection method using an anisotropic conductive adhesive according to Embodiment 4 of the present invention.

【００６４】図１５（Ａ）を参照して、本実施の形態で
は、脱着可能な粘着材層２４と銅板２３とからなる介在
部材２２を、粘着材層２４の粘着力を利用して矩形の半
導体装置１０の裏面に張り付けた状態で、加熱加圧機構
を有するボンディングツール７０によって介在部材２２
のついた半導体装置１０が真空吸着されている。Referring to FIG. 15A, in the present embodiment, the interposition member 22 composed of the removable adhesive layer 24 and the copper plate 23 is formed into a rectangular shape using the adhesive force of the adhesive layer 24. In a state of being attached to the back surface of the semiconductor device 10, the intervening member 22 is
Is attached to the semiconductor device 10 with vacuum.

【００６５】ボンディングステージ８０上の回路基板２
０には、樹脂バインダ３１中にＮｉ導電粒子３２を分散
させてなる液状の異方性導電接着剤３０を、予め塗布し
てある。Circuit board 2 on bonding stage 80
In the case of No. 0, a liquid anisotropic conductive adhesive 30 in which Ni conductive particles 32 are dispersed in a resin binder 31 is applied in advance.

【００６６】ボンディングツール７０に真空吸着された
半導体装置１０の能動面を、回路基板２０と向かい合わ
せた状態、すなわちフェイスダウン姿態で、半導体装置
１０と回路基板２０との位置合わせを行なう。The semiconductor device 10 and the circuit board 20 are aligned with the active surface of the semiconductor device 10 vacuum-sucked on the bonding tool 70 facing the circuit board 20, that is, in a face-down state.

【００６７】このとき、半導体装置１０の電極上には、
Ａｕワイヤを用いたボールバンピング法によって形成し
たＡｕバンプが、突起電極１２として形成してある。必
要に応じて、突起電極１２の先端の平坦化を行なっても
よい。なお、電解および無電解めっき法等による突起電
極形成も可能である。At this time, the electrodes of the semiconductor device 10
An Au bump formed by a ball bumping method using an Au wire is formed as the bump electrode 12. If necessary, the tip of the protruding electrode 12 may be flattened. In addition, it is also possible to form a protruding electrode by electrolytic and electroless plating.

【００６８】次に、図１５（Ｂ）に示すように、ボンデ
ィングツール７０を降下させ、半導体装置１０の能動面
で異方性導電接着剤３０を押し拡げながら突起電極１２
と基板電極２１とを当接せしめる。Next, as shown in FIG. 15B, the bonding tool 70 is lowered, and while the anisotropic conductive adhesive 30 is pushed and spread on the active surface of the semiconductor device 10,
And the substrate electrode 21 are brought into contact with each other.

【００６９】半導体装置１０からはみ出した異方性導電
接着剤３０は、半導体装置１０の側面に濡れ拡がり、介
在部材２２によってせき止まり、フィレット３３が形成
される。The anisotropic conductive adhesive 30 protruding from the semiconductor device 10 spreads on the side surface of the semiconductor device 10 and is stopped by the intervening member 22 to form a fillet 33.

【００７０】次に、ボンディングツール７０により加熱
加圧して、異方性導電接着剤３０中の樹脂バインダ３１
を硬化させ、接続工程を完了する。Then, the resin binder 31 in the anisotropic conductive adhesive 30 is heated and pressed by the bonding tool 70.
To complete the connection process.

【００７１】次に、図１５（Ｃ）に示すように、介在部
材２２を、粘着材層２４と異方性導電接着剤３０との界
面で剥離しながら、また半導体装置１０の裏面では、粘
着材層２４と半導体装置１０の裏面との界面で剥離しな
がら、介在部材２２を除去する。Next, as shown in FIG. 15C, the intervening member 22 is peeled off at the interface between the adhesive layer 24 and the anisotropic conductive adhesive 30, and on the back surface of the semiconductor device 10, The intervening member 22 is removed while separating at the interface between the material layer 24 and the back surface of the semiconductor device 10.

【００７２】このようにして、図１５（Ｄ）に示すよう
なフリップチップ接続構造が得られる。Thus, a flip-chip connection structure as shown in FIG. 15D is obtained.

【００７３】図１５（Ｃ）に示す介在部材２２の除去に
おいて、構成部材のうちで機械的強度の最も弱い粘着材
層２４の破壊に要する作用力、もしくは脱着可能な粘着
材層２４の剥離に要する作用力は微弱であるため、異方
性導電接着剤３０や半導体装置１０を破壊するものでは
ない。したがって、フリップチップ接続後に容易に介在
部材を剥がすことができるため、接続部の不良や半導体
装置の破損を防止することができる。In the removal of the intervening member 22 shown in FIG. 15C, the force required to break the adhesive layer 24 having the lowest mechanical strength among the constituent members or the peeling of the removable adhesive layer 24 is performed. Since the required acting force is weak, it does not destroy the anisotropic conductive adhesive 30 or the semiconductor device 10. Therefore, since the interposed member can be easily peeled off after the flip chip connection, a defective connection portion and damage to the semiconductor device can be prevented.

【００７４】また、本接続工程では、ボンディングツー
ル７０に異方性導電接着剤３０は及ばず、付着すること
がないため、ボンディングツール７０を破損させること
もない。In this connection step, the anisotropic conductive adhesive 30 does not reach the bonding tool 70 and does not adhere thereto, so that the bonding tool 70 is not damaged.

【００７５】また、フリップチップ接続後に介在部材２
２を除去するため、実装の高さを非常に低く抑えること
ができる。特に、薄型の半導体装置を用いてＩＣカード
を作製する場合には、異方性導電接着剤が半導体装置裏
面で盛り上がる高さが、実装後の半導体装置の高さより
も高くなることがある。すなわち、異方性導電接着剤が
半導体装置側面で盛り上がる高さ、界面レジンの注入工
程での半導体装置の裏面に盛り上がる高さ等が問題にな
るが、本実施の形態によれば、半導体装置からはみ出た
異方性導電接着剤は、半導体装置の実装高さよりも高く
盛り上がることはない。After the flip chip connection, the intervening member 2
2, the mounting height can be kept very low. In particular, when an IC card is manufactured using a thin semiconductor device, the height at which the anisotropic conductive adhesive swells on the back surface of the semiconductor device may be higher than the height of the semiconductor device after mounting. That is, the height at which the anisotropic conductive adhesive swells on the side surface of the semiconductor device, the height at which the anisotropic conductive adhesive swells on the back surface of the semiconductor device in the step of injecting the interface resin, and the like become problems. The protruding anisotropic conductive adhesive does not rise higher than the mounting height of the semiconductor device.

【００７６】なお、本発明は、上述した実施の形態４に
よって限定されるものではなく、介在部材２２は、複数
層を有し、その各層の中で少なくとも１層が異方性導電
接着剤３０および半導体装置１０の機械的強度よりも弱
ければよい。この場合、介在部材２２の除去を行なう際
にその層が破壊されて、異方性導電接着剤３０および半
導体装置１０の破損を防止することができ、目的を達成
することができる。The present invention is not limited to the above-described fourth embodiment. The intervening member 22 has a plurality of layers, and at least one of the layers has an anisotropic conductive adhesive 30. And the mechanical strength of the semiconductor device 10 may be lower. In this case, when the intervening member 22 is removed, the layer is destroyed, and damage to the anisotropic conductive adhesive 30 and the semiconductor device 10 can be prevented, and the object can be achieved.

【００７７】また、異方性導電接着剤３０は、異方性導
電フィルムでもよく、さらに電気的接続を単に電極同士
の圧接やはんだ接続、Ａｕ−Ｓｎ、Ａｕ−Ａｌ、Ａｕ−
Ａｕ接続で行なうこともできる。この場合、異方性導電
接着剤３０の代わりに、液状の熱硬化性樹脂やフィルム
状の熱硬化性樹脂、熱可塑性樹脂等を挟んだ状態でフリ
ップチップ接続を行ない、同様の効果を得ることができ
る。The anisotropic conductive adhesive 30 may be an anisotropic conductive film. Further, the electrical connection may be made simply by pressure contact between electrodes or solder connection, Au-Sn, Au-Al, Au-
Au connection can also be used. In this case, instead of the anisotropic conductive adhesive 30, a flip-chip connection is performed in a state where a liquid thermosetting resin, a film-shaped thermosetting resin, a thermoplastic resin, or the like is sandwiched, and a similar effect is obtained. Can be.

【００７８】（実施の形態５）図１６は、本発明の実施
の形態５に係る異方性導電接着剤を用いたフリップチッ
プ接続方法を示す断面図である。(Embodiment 5) FIG. 16 is a cross-sectional view showing a flip chip connection method using an anisotropic conductive adhesive according to Embodiment 5 of the present invention.

【００７９】図１６（Ａ）を参照して、本フリップチッ
プ接続方法では、まず、位置合わせ機構を有するツール
７１に、半導体装置１０を真空吸着する。Referring to FIG. 16A, in this flip chip connection method, first, semiconductor device 10 is vacuum-sucked to tool 71 having a positioning mechanism.

【００８０】樹脂バインダ３１中にＡｇ導電粒子３２を
分散させてなる液状の異方性導電接着剤３０を、ボンデ
ィングステージ８０上の回路基板２０に予め塗布する。A liquid anisotropic conductive adhesive 30 in which Ag conductive particles 32 are dispersed in a resin binder 31 is applied to the circuit board 20 on the bonding stage 80 in advance.

【００８１】ツール７１に真空吸着された半導体装置１
０の能動面を向かい合わせた状態、つまりフェイスダウ
ン姿態で、半導体装置１０と回路基板２０との位置合わ
せを行なう。Semiconductor device 1 vacuum-adsorbed to tool 71
The semiconductor device 10 and the circuit board 20 are aligned in a state where the active surfaces 0 face each other, that is, in a face-down state.

【００８２】このとき、半導体装置１０の電極上には、
ワイヤボンダを使用してＡｕワイヤを用いたボールバン
ピング法によって形成したＡｕバンプが、突起電極１２
として形成されている。必要に応じて、突起電極１２の
先端の平坦化を行なってもよい。なお、電解および無電
解めっき法等による突起電極形成も可能である。At this time, on the electrodes of the semiconductor device 10,
Au bumps formed by a ball bumping method using an Au wire using a wire bonder
It is formed as. If necessary, the tip of the protruding electrode 12 may be flattened. In addition, it is also possible to form a protruding electrode by electrolytic and electroless plating.

【００８３】次に、図１６（Ｂ）に示すように、ツール
７１を降下させ、半導体装置１０の能動面で異方性導電
接着剤３０を押し拡げながら、突起電極１２と基板電極
２１とを当接せしめる。Next, as shown in FIG. 16B, while lowering the tool 71 and pushing and spreading the anisotropic conductive adhesive 30 on the active surface of the semiconductor device 10, the projecting electrode 12 and the substrate electrode 21 are separated. Make contact.

【００８４】半導体装置１０からはみ出した異方性導電
接着剤３０は、半導体装置１０の周辺部に排出される。
この段階では加熱を行なわないため、半導体装置１０の
周辺部に排出された異方性導電接着剤３０の粘度は高
く、半導体装置１０の側面に這い上がることはない。The anisotropic conductive adhesive 30 protruding from the semiconductor device 10 is discharged to the periphery of the semiconductor device 10.
Since heating is not performed at this stage, the viscosity of the anisotropic conductive adhesive 30 discharged to the peripheral portion of the semiconductor device 10 is high and does not creep up on the side surface of the semiconductor device 10.

【００８５】また、この段階では、異方性導電接着剤３
０の硬化処理を行なっていないため、異方性導電接着剤
３０の粘性により半導体装置１０は仮固定される。At this stage, the anisotropic conductive adhesive 3
Since the hardening process of No. 0 is not performed, the semiconductor device 10 is temporarily fixed by the viscosity of the anisotropic conductive adhesive 30.

【００８６】次に、図１６（Ｃ）に示すように、加熱硬
化工程において、多層構造からなる介在部材２５が、リ
ール・ツー・リール方式で連続して供給される。本方式
で供給される多層構造からなる介在部材２５は、半導体
装置１０の裏面寸法より大きい寸法のアルミニウム箔２
８が、粘着材層２７を介してテトラフルオロエチレンベ
ースフィルム２６に連続的に貼り付けられた構造であ
る。Next, as shown in FIG. 16 (C), in the heat curing step, the interposed member 25 having a multilayer structure is continuously supplied in a reel-to-reel system. The interposed member 25 having a multi-layer structure supplied by this method has an aluminum foil 2 having a size larger than the back surface size of the semiconductor device 10.
Reference numeral 8 denotes a structure continuously attached to the tetrafluoroethylene base film 26 via the adhesive layer 27.

【００８７】介在部材２５を介して、加熱加圧機構を有
するボンディングツール７０によって半導体装置１０の
裏面側から加熱加圧を行ない、異方性導電接着剤３０中
の樹脂バインダ３１を硬化させる。このとき、半導体装
置１０の周辺部に排出されていた異方性導電接着剤３０
は、硬化前に低粘度化して半導体装置１０の側面を這い
上がってアルミニウム箔２８の部分でせき止まり、その
後フィレット３３を形成して硬化する。Heating / pressing is performed from the back side of the semiconductor device 10 by the bonding tool 70 having a heating / pressing mechanism via the intervening member 25 to cure the resin binder 31 in the anisotropic conductive adhesive 30. At this time, the anisotropic conductive adhesive 30 discharged to the periphery of the semiconductor device 10
Before the curing, the viscosity is reduced and the side surface of the semiconductor device 10 is crawled up and clogged at the aluminum foil 28, and then the fillet 33 is formed and cured.

【００８８】次に、図１６（Ｄ）に示すように、ボンデ
ィングツール７０とテトラフルオロエチレンベースフィ
ルム２６とを上昇させる。このとき、アルミニウム箔２
８は、異方性導電接着剤３０とフィレット３３の部分で
接着されているため、接続強度が最も弱い部分、つまり
粘着材層２７とアルミニウム箔２８との界面で剥離を起
こして、アルミニウム箔２８を半導体装置１０の裏面に
残したまま接続工程が完了する。Next, as shown in FIG. 16D, the bonding tool 70 and the tetrafluoroethylene base film 26 are raised. At this time, the aluminum foil 2
8 is bonded at the portion of the anisotropic conductive adhesive 30 and the fillet 33, so that peeling occurs at the portion having the weakest connection strength, that is, at the interface between the adhesive layer 27 and the aluminum foil 28, Is completed on the back surface of the semiconductor device 10 to complete the connection process.

【００８９】介在部材２５の除去において、アルミニウ
ム箔２８と粘着材層２７との界面での剥離に要する作用
力は微弱なもので、その作用は異方性導電接着剤３０や
半導体装置１０を破壊するものではなく、フリップチッ
プ接続工程後に容易に介在部材を剥がすことができるた
め、接続部の不良や半導体装置の破損を防止することが
できる。When the intervening member 25 is removed, the acting force required for peeling at the interface between the aluminum foil 28 and the adhesive layer 27 is weak, and the action is to break the anisotropic conductive adhesive 30 and the semiconductor device 10. Instead, the interposed member can be easily peeled off after the flip chip connecting step, so that a defective connection portion and damage to the semiconductor device can be prevented.

【００９０】本実施の形態における多層構造部材２５の
半導体装置１０と当接する部位を構成する材料として
は、アルミニウム等の金属箔に限定されるものではな
く、たとえば樹脂、シリコン、金属等からなる粉体もし
くは微細な球体または粒状体であっても差し支えない。The material forming the portion of the multilayer structure member 25 in the present embodiment that comes into contact with the semiconductor device 10 is not limited to a metal foil such as aluminum, but may be, for example, a powder made of resin, silicon, metal, or the like. It can be a body or fine spheres or granules.

【００９１】粉体、微小球体、粒状体を用いた場合は、
多層構造部材の半導体装置と当接する部位を構成する材
料の寸法および形状を、半導体装置に合わせて事前に成
形する必要はない。When powders, microspheres and granules are used,
It is not necessary to previously shape the size and shape of the material constituting the portion of the multilayer structural member that contacts the semiconductor device in accordance with the semiconductor device.

【００９２】また、粉体、微小球体、粒状体を用いた場
合、剥離時の応力は粉体、微小球体、粒状体の個々に作
用するため、極めて小さい力で引き剥がすことができ
る。When powders, microspheres and granules are used, since the stress at the time of peeling acts on each of the powder, microspheres and granules, it can be peeled off with an extremely small force.

【００９３】さらに、位置ずれを起こした場合に、金属
箔の端部が垂れ下がり短絡等の事故を起こす可能性がな
い。Further, when the displacement occurs, there is no possibility that the end of the metal foil sags and an accident such as a short circuit occurs.

【００９４】また、本接続工程では、ボンディングツー
ル７０に異方性導電接着剤３０が付着することがなく、
ボンディングツール７０を破損させることもない。In this connection step, the anisotropic conductive adhesive 30 does not adhere to the bonding tool 70,
The bonding tool 70 is not damaged.

【００９５】また、本実施の形態では、テトラフルオロ
エチレンベースフィルム２６および粘着材層２７は、破
損や汚染されることはなく、繰返し使用することができ
るため、コスト低減の効果もある。In the present embodiment, the tetrafluoroethylene base film 26 and the adhesive layer 27 can be used repeatedly without being damaged or contaminated, which also has the effect of reducing costs.

【００９６】なお、本発明は、接続後に介在部材２５の
除去を行なう手法に関して、上述した実施の形態５に限
定されるものではない。たとえば、部材２５は複数層を
有し、各層のうち少なくとも１層が異方性導電接着剤３
０および半導体装置１０の機械的強度よりも弱い場合、
もしくは層間の接着強度が弱ければ、その層での破壊や
剥離が行なわれ、異方性導電接着剤３０および半導体装
置１０の破損を防止することができる。The present invention is not limited to the above-described fifth embodiment with respect to the method of removing the intervening member 25 after connection. For example, the member 25 has a plurality of layers, and at least one of the layers has an anisotropic conductive adhesive 3.
0 and the mechanical strength of the semiconductor device 10 is lower than
Alternatively, if the adhesive strength between the layers is weak, destruction or peeling is performed in the layer, and damage to the anisotropic conductive adhesive 30 and the semiconductor device 10 can be prevented.

【００９７】また、接続後に介在部材２５を除去する他
の例としては、有機フィルムや金属箔のベース基材の片
面に粘着材層を構成した２層構造の部材であって、粘着
材層が半導体装置裏面と当接する方式の場合、半導体装
置と粘着材層との間の接着力が微弱な接着部では剥離を
起こし、フィレットと粘着材層との間の接続部では粘着
材層の破壊や剥離を起こし、目的を達成することができ
る。Another example of removing the interposition member 25 after connection is a member having a two-layer structure in which an adhesive layer is formed on one side of a base material such as an organic film or a metal foil. In the case of the method of contacting the back surface of the semiconductor device, the adhesive portion between the semiconductor device and the adhesive layer is weakly peeled at the adhesive portion, and the adhesive portion between the fillet and the adhesive layer is broken or damaged. Peeling occurs and the object can be achieved.

【００９８】また、本実施の形態では、位置合わせ工程
と樹脂硬化工程で２種のツール７０、７１を使用してい
るが、上述した有機フィルムや金属箔のベース基材の片
面に粘着材層を有した介在部材を用いた場合、図１７に
示すように、粘着材層２７の粘着力を利用して半導体装
置１０を固定し、位置合わせや樹脂硬化等の一連の工程
を１種類のボンディングツール７０で行なうことができ
る。In this embodiment, two kinds of tools 70 and 71 are used in the positioning step and the resin curing step. However, the adhesive material layer is formed on one surface of the above-mentioned organic film or metal foil base material. In the case where an intervening member having the following is used, as shown in FIG. 17, the semiconductor device 10 is fixed using the adhesive force of the adhesive layer 27, and a series of steps such as alignment and resin curing are performed by one type of bonding. This can be done with the tool 70.

【００９９】また、図１８に示すように、介在部材２５
のうち半導体装置１０が配置される部分に、ボンディン
グツール７０の真空吸着孔と同等の貫通孔２９を設けれ
ば、介在部材２５を介してボンディングツール７０で連
続的に半導体装置１０を固定して、図１８の状態でフリ
ップチップ接続を行なうことができ、生産性の向上が期
待できる。Also, as shown in FIG.
If the through hole 29 equivalent to the vacuum suction hole of the bonding tool 70 is provided in the portion where the semiconductor device 10 is disposed, the semiconductor device 10 is continuously fixed by the bonding tool 70 via the interposition member 25. 18, the flip-chip connection can be performed, and an improvement in productivity can be expected.

【０１００】また、異方性導電接着剤３０は、異方性導
電フィルムでもよく、さらに電気的接続を単に電極同士
の圧接やはんだ接続、Ａｕ−Ｓｎ、Ａｕ−Ａｌ、Ａｕ−
Ａｕ接続で行なうこともできる。この場合、異方性導電
接着剤３０の代わりに、液状の熱硬化性樹脂やフィルム
状の熱硬化性樹脂、熱可塑性樹脂を挟んだ状態でフリッ
プチップ接続を行ない、同様の効果が得られる。The anisotropic conductive adhesive 30 may be an anisotropic conductive film. Further, the electrical connection may be made simply by pressure contact between electrodes or solder connection, Au-Sn, Au-Al, Au-
Au connection can also be used. In this case, instead of the anisotropic conductive adhesive 30, flip-chip connection is performed in a state where a liquid thermosetting resin, a film-shaped thermosetting resin, or a thermoplastic resin is sandwiched, and the same effect can be obtained.

【０１０１】[0101]

【発明の効果】以上説明したように、本発明によれば、
フリップチップ接続工程において半導体装置の側面に形
成した段差のエッジ部で、エッジが延びる水平方向に接
着剤が拡がるため、垂直方向には拡がり難く、ボンディ
ングツールへの付着を防止することができる。その結
果、ボンディングツールの破損や、ツールヘッドの汚染
による平坦度の悪化等の問題に対して防止する効果を発
揮し、生産性を向上させる。As described above, according to the present invention,
At the edge of the step formed on the side surface of the semiconductor device in the flip chip connection step, the adhesive spreads in the horizontal direction in which the edge extends, so it is difficult to spread in the vertical direction, and it is possible to prevent adhesion to the bonding tool. As a result, the effect of preventing problems such as breakage of the bonding tool and deterioration of flatness due to contamination of the tool head is exhibited, and productivity is improved.

【０１０２】また、僅かな段差では余分な接着剤を溜め
ておくだけの容量が不足していたが、半導体装置主面方
向の段付き幅を３０μｍ以上にとることで、せき止めた
ときの容量や段差部で溜められる容量を十分に確保する
ことができ、接着剤塗布量のマージンを大きくできる効
果を発揮する。Although the capacity for storing the excess adhesive is not enough with a small step, the stepped width in the direction of the main surface of the semiconductor device is set to 30 μm or more, so that the capacity at the time of clogging is reduced. It is possible to secure a sufficient capacity to be stored in the step portion, and to exert an effect of increasing a margin of an applied amount of the adhesive.

【０１０３】また、段差部で水平方向に異方性導電接着
剤が拡がるため、半導体装置の側面にボリュームの偏り
がほとんどない状態でフィレットが形成されて、安定し
た実装構造を実現でき、信頼性上の品質のばらつきを小
さく抑える効果がある。Further, since the anisotropic conductive adhesive spreads in the horizontal direction at the step, a fillet is formed on the side surface of the semiconductor device with almost no deviation of the volume, and a stable mounting structure can be realized. This has the effect of minimizing the above variation in quality.

【０１０４】さらに、本発明によれば、厚さが５０〜１
００μｍ程度の薄型の半導体装置の場合、介在部材と半
導体装置側面で形成される段付き部に余分な接着剤を溜
めることができるため、フィレット上端を、留置部材も
しくは多層構造からなる介在部材によって止めることが
できる。Further, according to the present invention, the thickness is 50 to 1
In the case of a thin semiconductor device having a thickness of about 00 μm, excess adhesive can be accumulated in the stepped portion formed between the intervening member and the side surface of the semiconductor device. be able to.

【０１０５】また、偏って多量の接着剤が流出しても、
介在部材と半導体装置側面で形成される段付き部に余分
な接着剤を溜めることができるため、フィレット上端
を、留置部材もしくは多層構造からなる介在部材によっ
て止めることができる。その結果、ボンディングツール
の破損や、ツールヘッドの汚染による平坦度の悪化等の
問題が解決される。Also, even if a large amount of adhesive flows out,
Since excess adhesive can be stored in the stepped portion formed between the interposed member and the side surface of the semiconductor device, the upper end of the fillet can be stopped by the indwelling member or the interposed member having a multilayer structure. As a result, problems such as breakage of the bonding tool and deterioration of flatness due to contamination of the tool head are solved.

【０１０６】さらに、介在フィルムに付着する接着剤が
増加しても容易に剥がすことができ、薄型ＩＣの接続に
おいて、介在フィルムを剥がす際に半導体装置を破損す
ることがないため、生産歩留まりの低下を防ぐことがで
きる。Furthermore, even if the amount of adhesive adhering to the intervening film increases, it can be easily peeled off, and in connection of a thin IC, the semiconductor device is not damaged when the intervening film is peeled off. Can be prevented.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明によるフリップチップ接続構造の一例を
示す断面図である。FIG. 1 is a sectional view showing an example of a flip chip connection structure according to the present invention.

【図２】本発明によるフリップチップ接続方法における
ダイシング工程の一例を示す断面図である。FIG. 2 is a cross-sectional view showing an example of a dicing step in the flip chip connection method according to the present invention.

【図３】本発明によるフリップチップ接続方法の一例を
示す断面図である。FIG. 3 is a sectional view showing an example of a flip chip connection method according to the present invention.

【図４】本発明によるフリップチップ接続構造の他の例
を示す断面図である。FIG. 4 is a sectional view showing another example of the flip chip connection structure according to the present invention.

【図５】本発明によるフリップチップ接続構造のさらに
他の例を示す断面図である。FIG. 5 is a sectional view showing still another example of the flip chip connection structure according to the present invention.

【図６】本発明によるフリップチップ接続構造のさらに
他の例を示す断面図である。FIG. 6 is a sectional view showing still another example of the flip chip connection structure according to the present invention.

【図７】本発明によるフリップチップ接続構造のさらに
他の例を示す断面図である。FIG. 7 is a sectional view showing still another example of the flip chip connection structure according to the present invention.

【図８】本発明によるフリップチップ接続構造のさらに
他の例を示す断面図である。FIG. 8 is a sectional view showing still another example of the flip chip connection structure according to the present invention.

【図９】本発明によるフリップチップ接続構造のさらに
他の例を示す断面図である。FIG. 9 is a sectional view showing still another example of the flip chip connection structure according to the present invention.

【図１０】本発明によるフリップチップ接続構造のさら
に他の例を示す断面図である。FIG. 10 is a sectional view showing still another example of the flip-chip connection structure according to the present invention.

【図１１】本発明によるフリップチップ接続構造のさら
に他の例を示す断面図である。FIG. 11 is a sectional view showing still another example of the flip-chip connection structure according to the present invention.

【図１２】本発明によるフリップチップ接続構造のさら
に他の例を示す断面図である。FIG. 12 is a sectional view showing still another example of the flip-chip connection structure according to the present invention.

【図１３】本発明によるフリップチップ接続構造のさら
に他の例を示す断面図である。FIG. 13 is a sectional view showing still another example of the flip-chip connection structure according to the present invention.

【図１４】本発明によるフリップチップ接続方法の他の
例を示す断面図である。FIG. 14 is a cross-sectional view showing another example of the flip-chip connection method according to the present invention.

【図１５】本発明によるフリップチップ接続方法のさら
に他の例を示す断面図である。FIG. 15 is a sectional view showing still another example of the flip-chip connection method according to the present invention.

【図１６】本発明によるフリップチップ接続方法のさら
に他の例を示す断面図である。FIG. 16 is a sectional view showing still another example of the flip-chip connection method according to the present invention.

【図１７】本発明によるフリップチップ接続方法におい
て、半導体装置と介在部材とを固定する方法の一例を示
す断面図である。FIG. 17 is a cross-sectional view showing an example of a method of fixing a semiconductor device and an interposition member in the flip chip connection method according to the present invention.

【図１８】本発明によるフリップチップ接続方法におい
て、半導体装置と介在部材とを固定する方法の他の例を
示す断面図である。FIG. 18 is a cross-sectional view showing another example of a method of fixing a semiconductor device and an interposition member in the flip chip connection method according to the present invention.

【図１９】従来のフリップチップ接続構造および接続方
法を示す断面図である。FIG. 19 is a cross-sectional view showing a conventional flip chip connection structure and connection method.

【図２０】従来のフリップチップ接続構造および接続方
法における問題点を説明するための断面図である。FIG. 20 is a cross-sectional view for describing a problem in a conventional flip-chip connection structure and connection method.

【符号の説明】[Explanation of symbols]

１０、１１０、２１０、３１０、４１０、５１０ 半導
体装置 １１ 段差 １２ 突起電極 ２０ 回路基板 ２１ 基板配線 ２２ 介在部材 ２３ 銅板層 ２４ 粘着材層 ２５ 介在部材 ２６ テトラフルオロエチレンベースフィルム ２７ 粘着材層 ２８ アルミニウム箔 ２９ 貫通孔 ３０ 異方性導電接着剤 ３１ 樹脂 ３２ 導電粒子 ３３ フィレット ４０ ウエハ ５０ シート ６０、６１ ダイシングブレード ７０ ボンディングツール ７１ 仮留め用ツール ８０ ボンディングステージ １１４、２１４、３１４、４１４、５１４、６１４ 部
材 １９０ 介在部材 １９１ 貫通孔 なお、各図中、同一符号は同一または相当部分を示す。DESCRIPTION OF SYMBOLS 10, 110, 210, 310, 410, 510 Semiconductor device 11 Step 12 Protrusion electrode 20 Circuit board 21 Substrate wiring 22 Interposition member 23 Copper plate layer 24 Adhesive layer 25 Interposition member 26 Tetrafluoroethylene base film 27 Adhesive layer 28 Aluminum foil 29 Through Hole 30 Anisotropic Conductive Adhesive 31 Resin 32 Conductive Particle 33 Fillet 40 Wafer 50 Sheet 60, 61 Dicing Blade 70 Bonding Tool 71 Temporary Fixing Tool 80 Bonding Stage 114, 214, 314, 414, 514, 614 Member 190 Interposed member 191 Through hole In each drawing, the same reference numerals indicate the same or corresponding parts.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 山村 圭司 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 (72)発明者 土津田 義久 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Keiji Yamamura 22-22, Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Yoshihisa Dotsuda 22-22, Nagaikecho, Abeno-ku, Osaka-shi, Osaka In the company

Claims (18)

【特許請求の範囲】[Claims] 【請求項１】 半導体装置を、導電性部材を介して回路
基板上の配線部分と電気的に接続し、接着剤を用いて回
路基板に固着する、フリップチップ接続構造であって、 前記半導体装置の側面に、厚さ方向に沿って多段形状を
設けたことを特徴とする、フリップチップ接続構造。1. A flip-chip connection structure in which a semiconductor device is electrically connected to a wiring portion on a circuit board via a conductive member and is fixed to the circuit board using an adhesive. A flip-chip connection structure, characterized in that a multi-stage shape is provided along the thickness direction on the side surface of the flip chip. 【請求項２】 前記多段形状は、前記接着剤が塗布され
る前記半導体装置の能動面の周縁に沿って形成された窪
み部を有することを特徴とする、請求項１記載のフリッ
プチップ接続構造。2. The flip-chip connection structure according to claim 1, wherein the multi-stage shape has a recess formed along a periphery of an active surface of the semiconductor device to which the adhesive is applied. . 【請求項３】 前記多段形状は、前記接着剤が付着され
る前記半導体装置の裏面の周縁に沿って形成された窪み
部を有することを特徴とする、請求項１記載のフリップ
チップ接続構造。3. The flip-chip connection structure according to claim 1, wherein the multi-stage shape has a recess formed along a peripheral edge of a back surface of the semiconductor device to which the adhesive is attached. 【請求項４】 前記多段形状は、前記半導体装置主面方
向の段付き幅が３０μｍ以上であることを特徴とする、
請求項１記載のフリップチップ接続構造。4. The multi-stage shape is characterized in that a step width in a main surface direction of the semiconductor device is 30 μm or more.
The flip chip connection structure according to claim 1. 【請求項５】 半導体装置を、導電性部材を介して回路
基板上の配線部分と電気的に接続し、接着剤を用いて回
路基板に固着する、フリップチップ接続構造であって、 前記半導体装置の裏面に、前記半導体装置の裏面よりも
大きな寸法を有する接続部材が接続されたことを特徴と
する、フリップチップ接続構造。5. A flip-chip connection structure, wherein a semiconductor device is electrically connected to a wiring portion on a circuit board via a conductive member and is fixed to the circuit board using an adhesive. A connection member having a dimension larger than the back surface of the semiconductor device is connected to the back surface of the semiconductor device. 【請求項６】 半導体装置を、導電性部材を介して回路
基板上の配線部分と電気的に接続し、接着剤を用いて回
路基板に固着する、フリップチップ接続構造であって、 前記半導体装置の裏面に、前記半導体装置の裏面よりも
小さな寸法を有する接続部材が接続されたことを特徴と
する、フリップチップ接続構造。6. A flip-chip connection structure in which a semiconductor device is electrically connected to a wiring portion on a circuit board via a conductive member and is fixed to the circuit board using an adhesive. A connection member having a smaller dimension than the back surface of the semiconductor device is connected to the back surface of the semiconductor device. 【請求項７】 前記半導体装置と前記接続部材との段付
き幅が、３０μｍ以上であることを特徴とする、請求項
５または請求項６記載のフリップチップ接続構造。7. The flip-chip connection structure according to claim 5, wherein a step width between the semiconductor device and the connection member is 30 μm or more. 【請求項８】 半導体装置を接着剤を用いて回路基板に
フリップチップ接続を行なう方法であって、 ボンディングツールヘッドと前記半導体装置との間に、
留置部材を配設するステップと、 前記留置部材を介して、前記接着剤の加熱硬化を行なう
ステップとを備え、 前記接着剤の硬化後も前記留置部材を留置することを特
徴とする、フリップチップ接続方法。8. A method for performing flip-chip connection of a semiconductor device to a circuit board using an adhesive, wherein a flip-chip connection is provided between a bonding tool head and the semiconductor device.
A flip chip, comprising: disposing a retaining member; and heating and curing the adhesive via the retaining member, wherein the retaining member is retained even after the adhesive is cured. Connection method. 【請求項９】 半導体装置を接着剤を用いて回路基板に
フリップチップ接続を行なう方法であって、 ボンディングツールヘッドと前記半導体装置との間に、
多層構造からなる部材を配設するステップと、 前記多層構造からなる部材を介して、前記接着剤の加熱
硬化を行なうステップと、 前記接着剤の硬化後に前記部材の少なくとも一部を除去
するステップとを備えることを特徴とする、フリップチ
ップ接続方法。9. A method for performing flip-chip connection of a semiconductor device to a circuit board using an adhesive, wherein a flip-chip connection is provided between a bonding tool head and the semiconductor device.
Disposing a member having a multilayer structure; performing heat curing of the adhesive through the member having the multilayer structure; and removing at least a part of the member after the adhesive is cured. A flip-chip connection method, comprising: 【請求項１０】 前記ボンディングツールヘッドと前記
半導体装置との間に多層構造からなる部材を配設する前
に、前記半導体装置を前記回路基板に仮留めするステッ
プをさらに備えることを特徴とする、請求項９記載のフ
リップチップ接続方法。10. The method according to claim 1, further comprising a step of temporarily fixing the semiconductor device to the circuit board before disposing a member having a multilayer structure between the bonding tool head and the semiconductor device. The flip chip connection method according to claim 9. 【請求項１１】 前記多層構造からなる部材の少なくと
も１層の機械的強度が、前記接着剤の硬化物および前記
半導体装置の機械的強度よりも弱いことを特徴とする、
請求項９記載のフリップチップ接続方法。11. The mechanical strength of at least one layer of the member having the multilayer structure is lower than the mechanical strength of the cured product of the adhesive and the semiconductor device.
The flip chip connection method according to claim 9. 【請求項１２】 前記多層構造からなる部材の少なくと
も１層が、脱着可能な粘着材層であることを特徴とす
る、請求項９記載のフリップチップ接続方法。12. The flip chip connection method according to claim 9, wherein at least one layer of the member having the multilayer structure is a detachable adhesive layer. 【請求項１３】 前記多層構造からなる部材の、隣接す
る少なくとも２層間の層間接続強度が、前記接着剤の硬
化物および前記半導体装置の機械的強度よりも弱いこと
を特徴とする、請求項９記載のフリップチップ接続方
法。13. The semiconductor device according to claim 9, wherein the interlayer connection strength between at least two adjacent layers of the member having the multilayer structure is lower than the mechanical strength of the cured product of the adhesive and the semiconductor device. Flip chip connection method as described. 【請求項１４】 前記多層構造からなる部材を除去する
ステップは、前記部材の前記半導体装置に接する層と、
前記半導体装置の裏面との間で剥離することにより、前
記部材の少なくとも一部を除去することを特徴とする、
請求項９記載のフリップチップ接続方法。14. The method according to claim 14, wherein the step of removing the member having the multilayer structure includes the step of: contacting the semiconductor device with a layer of the member;
By peeling between the back surface of the semiconductor device, at least a part of the member is removed,
The flip chip connection method according to claim 9. 【請求項１５】 前記多層構造からなる部材を除去する
ステップは、前記部材の前記半導体装置に接する層を破
壊することにより、前記部材の少なくとも一部を除去す
ることを特徴とする、請求項９記載のフリップチップ接
続方法。15. The method according to claim 9, wherein the step of removing the member having the multilayer structure comprises removing at least a part of the member by destroying a layer of the member in contact with the semiconductor device. Flip chip connection method as described. 【請求項１６】 前記多層構造からなる部材を除去する
ステップは、前記部材の隣接する少なくとも２層間で剥
離することにより、前記部材の少なくとも一部を除去す
ることを特徴とする、請求項９記載のフリップチップ接
続方法。16. The method according to claim 9, wherein the step of removing the member having the multilayer structure removes at least a part of the member by peeling between at least two adjacent layers of the member. Flip chip connection method. 【請求項１７】 前記多層構造からなる部材を除去する
ステップは、前記部材の少なくとも１層を破壊すること
により、前記部材の少なくとも一部を除去することを特
徴とする、請求項９記載のフリップチップ接続方法。17. The flip of claim 9, wherein the step of removing the multi-layered member removes at least a portion of the member by destroying at least one layer of the member. Chip connection method. 【請求項１８】 前記多層構造からなる部材の前記半導
体装置に接する面に、粉体、微小球体、または粒状体を
配設したことを特徴とする、請求項９記載のフリップチ
ップ接続方法。18. The flip-chip connection method according to claim 9, wherein a powder, a micro sphere, or a granular material is provided on a surface of the member having the multilayer structure in contact with the semiconductor device.
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