JP2000206314A - Substrate with light-shielding layer, color filter substrate, display element, target for forming substrate with light-shielding layer, and method of manufacturing substrate with light-shielding layer - Google Patents

Abstract

(57) [Problem] To provide an environment-friendly substrate with a light-shielding layer, which is excellent in optical characteristics and durability comparable to those of a conventional chromium film and is environmentally friendly. In a substrate with a light-shielding layer, nickel (Ni) and tantalum (Ta) are main components on a substrate 1, and the composition of Ta is 15% of the total of Ni and Ta in atomic ratio.
A substrate with a light-shielding layer containing at least one of a light-shielding layer 2 and a low-reflection layer 3 made of a metal and / or a metal compound in an amount of from 40% to 40%, preferably from 20% to 40% solves the above problems, As a substrate with a light-shielding layer having excellent durability and being environmentally friendly, it can be used for a display element (for example, a liquid crystal display element) or the like. In particular, it is preferable to adopt a structure in which a plurality of low-reflection layers 3 and light-shielding layers 2 having the above composition are sequentially formed on the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a novel substrate with a light-shielding layer, a color filter substrate, a display element, a target for forming a substrate with a light-shielding layer, and a method for manufacturing a substrate with a light-shielding layer. It is possible to provide a substrate with a light-shielding layer used for a display element or the like having optical performance and durability comparable to those of a metal light-shielding film represented by a chromium film conventionally used.

[0002]

2. Description of the Related Art In recent years, colorization of flat panel displays such as a liquid crystal display (LCD), a plasma display (PDP), and an electroluminescence display (ELD) has been advanced.

In each of these color panels, a light-shielding layer having a light-shielding function is provided between the RGB color filters in order to improve the contrast of the screen and improve the visibility. Examples of the material of the light-shielding layer include a metal film such as chromium and nichrome, and a resin containing a black pigment such as carbon.

As a method of forming a light-shielding layer on a substrate, in the case of a metal film such as chromium, a thin film having a thickness of about 100 nm is formed on the substrate by sputtering or the like, and then a resist pattern is formed by photolithography. Then, using this as a mask, etching is performed to form a desired metal pattern.

[0005] In particular, when it is desired to obtain a light-shielding layer having a low surface reflectance, a metal oxide or oxynitride is formed on a substrate by 50n.
A structure in which a metal film having a thickness of about 100 nm is stacked after forming a metal film having a thickness of about m is also used.

On the other hand, in the case of a resin containing a black pigment, a method in which an ink in which a black pigment powder is dispersed in a resin is printed into a print pattern by a printing method, and then cured by heating to form a light-shielding layer is used. In some cases, an ink in which a black pigment powder is dispersed in a photosensitive resin is applied, and a light-shielding layer having a desired pattern is formed by photolithography.

[0007]

A conventional light-shielding film using a metal such as chromium or nichrome not only has an advantage that a sufficient light-shielding performance can be obtained even with a film thickness of about 100 nm, but also has a very fine pattern formation. Is easy.

The light-shielding layer using these metals, their oxides or their oxynitrides is mainly formed by a vacuum film-forming method such as a sputtering method, and then is subjected to pattern formation by photolithography and etching of a resist. Do. For this reason, there is an advantage that occurrence of pinholes and the like is extremely small, and sufficient light shielding performance can be obtained even with a film thickness of about 100 nm.
On the other hand, there is a disadvantage that productivity is low and production cost is high.

[0009] Furthermore, in recent years, when consideration for the environment is strongly screamed,
Reduction of the burden of chromium etching waste liquid treatment is a new issue, and a metal material for a light-shielding layer instead of chromium is required.

On the other hand, in the case of a resin containing a black pigment, it is not necessary to use a vacuum film forming method, so that the productivity is high,
Although the manufacturing cost is low, the pattern thickness must be extremely thick, about 2 μm, in order to obtain sufficient light-shielding performance, making it difficult to form a fine pattern, or a large step between the substrate and the portion where the light-shielding layer exists. This step may adversely affect, for example, the alignment control of the liquid crystal, and has not yet completely replaced the metal light-shielding film.

In view of the above problems, the present invention has excellent optical performance, durability and etching performance equivalent to those of a metal light-shielding film represented by the above-described chromium film, and has little production problems such as waste liquid treatment. It is an object of the present invention to provide a new substrate with a metal light-shielding layer, a color filter substrate thereof, a display device such as a liquid crystal display device, a method of manufacturing the same, a sputter target used therefor, and the like.

[0012]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies to solve the above-mentioned problems, and as a result, the composition of nickel (Ni) and tantalum (Ta) as the main components and the composition of the Ta in atomic ratio is Ni. And a light-shielding layer comprising at least one of a light-shielding layer and a low-reflection layer made of a metal and / or a metal compound in an amount of 15 to 40% with respect to the total of Ta and Ta. The inventors have found that the performance is comparable to that of the conventional product from both the performance and the durability performance, and have completed the present invention based on this finding.

That is, the present invention comprises nickel (Ni) and tantalum (Ta) as the main components, and the composition of the Ta is an atomic ratio of N.
metal which is 15 to 40% based on the sum of i and Ta and / or
Alternatively, the present invention is a substrate provided with a light-shielding layer containing at least one of a light-shielding layer made of a metal compound and a low reflection layer (substrate with a light-shielding layer), and the following contents are also included in the present invention.

The present invention relates to a substrate provided with a light shielding layer. Ni and Ta are used as the light shielding layer formed on the substrate.
A light-shielding layer composed of a metal and / or a metal compound whose main composition is Ta and whose atomic ratio is 15 to 40% with respect to the sum of Ni and Ta, and a low-reflection layer laminated on the light-shielding layer. Is made of such a metal and / or metal compound, and the light-shielding layer may not be made of such a metal and / or metal compound.

The substrate of the present invention is a substrate having at least a substrate such as glass, a light-shielding layer and a low-reflection layer if necessary. Ni and Ta are main components, and the composition of Ta is 1 in atomic ratio with respect to the sum of Ni and Ta.
A light-shielding layer comprising 5 to 40% of a metal and / or a metal compound; and / or b. A substrate with a light-shielding layer including a low-reflection layer made of a metal compound containing Ni and Ta as main components and having a composition of Ta in an atomic ratio of 15 to 40% with respect to the total of Ni and Ta.

The light-shielding layer is a layer having a light-shielding performance, and may include at least one thin film layer having a light-shielding performance. In the case of being composed of a plurality of thin films, at least one thin film may be included in the above numerical range for the calculation of the composition of Ta, but it is preferable to include it as an entire layer in terms of etching control. .

The above composition ratio of Ta is defined by the atomic ratio of Ta to the sum of Ni and Ta. The present invention relates to a substrate with a light-shielding layer. In the present invention, the light-shielding layer contains Ni and Ta as main components, and the composition of Ta is Ni and T in an atomic ratio.
The first case includes the case of a metal and / or a metal compound which is 15 to 40% based on the total of a. In this case, a low-reflection layer may or may not be provided. When the low-reflection layer is further provided, Ni and Ta are used as main components and the T
a is 15 to 4 with respect to the sum of Ni and Ta in atomic ratio.
One or more low-reflection layers made of a metal compound having a concentration of 0% may be contained, or one or more low-reflection layers made of a material other than such a metal compound, for example, one or more low-reflection layers formed by a known method may be contained. Is also good. Each of these layers can also include one or more layers.

If the content of Ta is less than 15%, it is not preferable in terms of acid resistance, that is, durability. Meanwhile, 4
If it exceeds 0%, it is not preferable in terms of etching performance.

The low-reflection layer is a layer having low reflection performance, that is, a layer having an antireflection effect, and may include a thin film having low reflection performance. In the case of being composed of a plurality of thin films, at least one thin film may be included in the above numerical range for the calculation of the composition of Ta, but it is preferable to include it as an entire layer in terms of etching control. .

Further, as a structure of the light-shielding layer in the substrate of the present invention, the light-shielding layer contains Ni and Ta as main components, and the composition of Ta is 15% of the total of Ni and Ta in atomic ratio.
When the composition does not include a metal and / or metal compound composition of up to 40%, that is, as described above, this layer may be composed of a plurality of thin films. There are cases where it is not included. In this case, as the light-shielding layer, for example, a known method can be adopted. As the low-reflection layer, the low-reflection layer used in the present invention described above is used.
And a low reflection layer made of a metal compound having a composition of Ta in an atomic ratio of 15 to 40% with respect to the sum of Ni and Ta.

The present invention comprises a metal and / or a metal compound containing Ni and Ta as main components and having a composition of Ta in an atomic ratio of 15 to 40% or 20 to 40% with respect to the total of Ni and Ta. For the light-shielding layer and / or the low-reflection layer,
As long as Ni and Ta are the main components, it does not matter whether they are in a simple substance, a compound, or any other form. For example, various metals and / or metal compounds are included, such as in the case of only metal (including the form of alloy) and in the case of metal compound, both of them. included. As a metal component, Ni and Ta are used as main components.
Only these two metals (including the form of an alloy) are preferable, but other metal components can be further contained as subcomponents. In the case where other metal components are contained, the content of the other metal components is 5 at an atomic ratio to the total of all metal components including the two metal components of the main component and the other metal components as subcomponents. Do not exceed%. In this case, it may be contained in the form of an alloy or a metal compound, in which case it is divided into Ni component and Ta component and other metal components. The above metal composition may be calculated by distinguishing the components of the metal part.

In the present invention, the term “metal compound” includes, in addition to those in which a certain metal and another element are completely bonded by a chemical bond, for example, a covalent bond, for example, a metal and another element. For example, those in the broadest sense of bonding, such as those in which oxygen is in a molecular or atomic state or other physical bonding, are also included. Naturally, the embodiment in which various gases react and react at the stage of film formation in the following embodiments of the present invention is also included.

On the other hand, when a light-shielding layer or a low-reflection layer which is not composed of a metal and / or a metal compound having the above-mentioned Ni and Ta as main components and having the above-mentioned predetermined composition is employed, the two metals are mainly used as the components. It may be a component, but as long as it does not have the above Ta composition, Ni and / or
Alternatively, various metals including Ta can be selected with various contents. Furthermore, various selections of these metal compounds are also possible.

Ni and Ta are typical metal components used in the light-shielding layer or low-reflection layer of the present invention. Other metal components that can be used other than Ni and Ta, for example, titanium, zirconium, Niobium, silicon, tungsten, molybdenum, iron, vanadium, antimony,
Elements such as phosphorus and boron can be given. Further, a compound (oxide, nitride, etc.) of the metal can be contained.

In particular, when a metal compound of the same element is used for the light-shielding layer and the low-reflection layer, the light-shielding layer has a lower degree of compounding of the element than the low-reflection layer. This is preferable in that sufficient light-shielding properties are ensured. For example, an oxide of the metal having a lower oxidation degree, a nitride of the metal having a lower nitridation degree, a carbide of the metal having a lower carbonization degree, and an oxynitride of the metal having a lower oxidation degree and nitriding degree than the low reflection layer. And mixtures thereof and these metals themselves can be used for the light-shielding layer. As will be described later, the light-shielding layer or the low-reflection layer may be formed by appropriately selecting the mutual transmittance.

With respect to the above calculation of the composition of Ta, the calculation targets are Ni metal and Ta metal (including the form of alloy).
It is a requirement that the calculation formula: Ta / Ni + Ta (atomic ratio) for the metal component be included in the numerical range in the present invention.

In the above substrate, a light-shielding layer made of a metal and / or a metal compound containing Ni and Ta as main components and having a composition of Ta in an atomic ratio of 15 to 40% with respect to the sum of Ni and Ta, and a low reflection layer In at least one of the layers, the Ta composition has an atomic ratio of 15 to the sum of Ni and Ta.
The content is preferably from 40 to 40%, more preferably from 20 to 40% in terms of having good etching performance.

In the above substrate, the compound of a metal mainly composed of Ni and Ta is, for example, an oxide, nitride, carbide, oxynitride, oxycarbide and the like of a metal mainly composed of Ni and Ta. A mixture of two or more of them is preferably used.

In the above substrate, a substrate provided with a low-reflection layer on at least one of an upper part and a lower part of the light-shielding layer containing Ni and Ta as a main component, or a low-reflection layer containing Ni and Ta as a main component. A substrate provided with a light-blocking layer on one of the upper and lower portions is preferably used.

In the above substrate, a low-reflection layer mainly containing Ni and Ta is provided on at least one of an upper portion and a lower portion of the light shielding layer mainly containing Ni and Ta, and the light shielding layer is made of Ni and Ta. And a low-reflection layer made of a metal or / and a nitride or carbide of the metal whose main component is Ni and Ta whose transmittance is higher than that of the light-shielding layer. A structure composed of a nitride, a carbide thereof, or an oxynitride thereof is preferably used.

In the substrate of the present invention, Ni
It is preferable to form a light-shielding layer and a low-reflection layer having the same metal composition within the above-mentioned composition range containing Ta and Ta as main components, and further, to have a structure of two or more layers including the low-reflection layer. In this case, it is more preferable to provide a low-reflection layer as a first layer from the substrate side, and to stack a light-shielding layer having light-shielding performance on the first layer. In order to further ensure low reflection performance, the metal compound used for the second layer has a lower degree of oxidation, nitridation or carbonization, and a compound of the metal having a lower degree of oxynitridation, for example, oxidation of the metal. Materials, nitrides, carbides and oxynitrides,
Alternatively, by adopting a structure containing the metal, that is, Ni and Ta, good low reflection performance can be obtained.

When a multi-layer structure such as a low-reflection layer is formed in addition to the light-shielding layer, if these are formed of the same material, there are many advantages such that only one kind of sputter target is required at the time of fabrication.

Therefore, in the manufacture of the substrate, Ni and Ta are used as main components, and the composition of Ta is 15 to 40%, preferably 20 to 40%, of the total of Ni and Ta in atomic ratio.
A sputter target having a metal composition of 0% can be employed, and such a sputter target is also included in the present invention.

In particular, as described above, when preparing a sputtering target for magnetron sputtering for forming a light-shielding layer and / or a low-reflection layer, the composition of Ni and Ta in the sputter target material, which is the main component, is as described above. What is necessary is just to manufacture so that it may be a composition ratio. In particular, when a low reflection layer is provided, it is preferable to select a material having the same metal composition as this, particularly from the viewpoint of productivity.

The present invention also includes a color filter substrate having a color filter layer on any of the above substrates provided with a light-shielding layer. According to a conventional method, a color filter layer can be formed on any one of the above substrates with a light-shielding layer, and an electrode can be further formed on the substrate with an insulating layer if necessary.

When the light-shielding layer and / or the low-reflection layer of any of the above-mentioned substrate and color substrate is formed by a sputtering method, particularly preferably a magnetron sputtering method, a substrate with a light-shielding layer and a color filter substrate can be manufactured.
This method is also included in the present invention.

In the case of having a structure of two or more layers such as a low reflection layer other than the light-shielding layer, it is preferable that at least one layer is formed by a sputtering method, in particular, a magnetron sputtering method, so that uniform coating, foreign matter, and This is preferable in that a dense film having few hole defects can be formed.

A display element having any of the above substrates or having the above color filter substrate is also included in the present invention. When used as a liquid crystal display element, it is preferable to provide a liquid crystal layer on the liquid crystal display element. Usually, when the liquid crystal layer is sandwiched between the color filter substrate and another substrate with electrodes, the liquid crystal display element is manufactured. Is done.

[0039]

Next, an embodiment of the present invention will be described.

FIG. 1 is a cross-sectional view of a typical example showing a substrate with a light-shielding layer according to the present invention, which has a two-layer structure of a light-shielding layer and a low reflection layer. FIG. 2 is a cross-sectional view of an example showing a substrate with a light-shielding layer of the present invention, which is an example of one light-shielding layer having no low-reflection layer. 1 to 3, reference numeral 1 denotes a substrate such as glass;
Represents a light shielding layer, and 3 represents a low reflection layer. In the example of FIG. 1, the light-shielding layer 2 (second layer) and the low-reflection layer 3 (first layer) constitute two layers.

Hereinafter, the present invention will be described mainly with reference to FIG. 1 which is a typical example showing a substrate with a light-shielding layer of the present invention, but the present invention is of course not limited to this. The light-shielding layer 2 and / or the low-reflection layer 3 according to the present invention contain Ni and Ta as main components, and the composition of Ta with respect to the atomic sum of Ni and Ta is 15 to 40%, preferably 20 to 40% in atomic ratio. It is good to form with the material which consists of a metal and / or a metal compound.

More specifically, the light-shielding layer and / or the low-reflection layer are made of a composition containing Ni and Ta as main components.
The composition (proportion) of Ta with respect to the atomic sum of N is in the range of 15 to 40%, preferably 20 to 40% in atomic ratio.
A metal film containing i and Ta as main components and / or a compound film of the metal, for example, an oxide film, a nitride film, a carbide film, and an oxynitride film can be suitably used.

Also, because the durability is improved,
As for the light-shielding layer and / or the low-reflection layer, one or more of zirconium, niobium, titanium, silicon, tungsten, molybdenum, iron, vanadium, antimony, phosphorus, and boron are further added in addition to Ni and Ta. May be contained. In this case, it is preferable to appropriately select the elements to be contained and their contents, particularly the contents, in consideration of durability and performance. With this in mind,
When the additional element is present, its content is N
The ratio of the total amount of the additional metal elements to the total number of atoms of all metal components including i and Ta should not exceed 5 atomic%. If it exceeds 5 atomic%, the possibility of affecting acid resistance or etching performance is increased.

In this case, the components other than the main components Ni and Ta may be present in the form of an alloy or a compound. In this case, the Ni and Ta components and the other components are added to the respective metal parts. It is necessary to calculate the above content separately.

Further, from the viewpoint that the reflection on the substrate side can be suppressed, it is preferable to use the light shielding layer in a two-layer structure by adding a low reflection layer as shown in FIG. in this case,
In one preferred embodiment, the first layer 3 is formed as a layer for suppressing reflection on the substrate 1 side by making the metal composition of Ni and Ta the same, that is, a low reflection layer such as a film having low reflection performance. Then, a second layer 2 having a high light shielding degree is formed thereon as a light shielding layer. There is no particular difficulty in manufacturing the low-reflection layer of the first layer 3, and those skilled in the art can easily reflect light based on conventional techniques, for example, techniques used for metal films such as Cr and the embodiments of the present invention. A suppression film can be formed. As the film of the low reflection layer, a metal compound film containing Ni and Ta as the main components is preferably used, and it is possible to easily compare the transmittance with each other and to easily suppress the reflection.

As the second layer 2, a metal film containing Ni and Ta as main components or a compound film of the above metal is preferably used with the same metal composition as the first layer. At this time, the first layer 3 and the second layer 2 are formed because the durability is improved.
May contain the same or the above-mentioned other elements independently in the above-mentioned content. However, the above-mentioned other elements may preferably be contained, but as described above, the first element may be contained.
It is also preferable in terms of productivity that the metal composition be the same between the layer and the second layer.

In order to provide light-shielding performance or low-reflection performance, a gas such as oxygen, nitrogen, or a carbonized material is produced in a production step for a metal material based on the prior art and the description of the present invention. The reaction may be appropriately performed using

When materials used for each of these layers, particularly materials having the same metal composition, are used, the content of oxygen, nitrogen, carbon, etc. suitable for each layer is selected. That is, the first
Both the layer and the second layer can be used as a metal oxide film or a nitride film containing Ni and Ta as main components. In this case, the first layer of Ni and Ta is mainly used. The oxide or nitride film used as the component has an oxygen or nitrogen content such that the reflection gloss is smaller than the light blocking degree, and the second layer Ni
The oxide or nitride film containing Ta and Ta as main components preferably has an oxygen or nitrogen content that does not impair the degree of light shielding.

In this case, the light-shielding layer is made of a material mainly composed of Ni and Ta. The reason is that Ni, which is the first main component of the light-shielding layer used here, has low durability. In addition to the above, colored oxides, nitrides, oxynitrides, and the like are easily formed, which is suitable for precisely controlling the transparency and the refractive index.
That is, it is because a reflection suppressing layer (first layer) which is a low reflection layer having excellent reflection suppressing performance can be easily provided. In addition, the use of Ni also facilitates etching with an acidic solution.

On the other hand, Ta, which is the other main component, has very high durability and can provide a light-shielding layer having high light-shielding properties and excellent durability. However, since Ta has very high durability and is hardly etched by itself, it is assumed that Ni and Ta are main components and the composition of Ta is 15 to 40% by atomic ratio with respect to the sum of Ni and Ta. In terms of acid resistance, that is, durability and etching performance, it has excellent optical characteristics such as light-shielding properties and reflection suppression performance, and can be etched. More preferably, the composition of Ta is in the range of 20 to 40% by atomic ratio with respect to the sum of Ni and Ta.
If the composition of Ta is less than 15 atomic% in atomic ratio, the acid resistance is weakened and the durability is reduced, and if it exceeds 40 atomic%, etching becomes difficult, so that each is not preferable. More favorable etching performance is obtained in a region where the composition of Ta is 40% or less in atomic ratio.

Further, a durable layer or the like made of the above-mentioned metal oxide film or the like may be provided above or below the light-shielding layer to form a three-layer structure. And a two-layer structure. In this case, the durable layer can be provided to improve the durability of the light shielding layer. Thereby, in a process such as cleaning or photolithography during the color filter forming process, it is possible to suppress the performance of the light-shielding layer from deteriorating and the occurrence of pinholes.

On the other hand, as for the low reflection layer, not only one layer but also a plurality of layers can be provided if necessary. In this case, two or more layers can be provided on both sides of the light shielding layer or on one side thereof. The thickness of the light-shielding layer 2 is about 50 to 1000 nm, and preferably about 80 to 300 nm. That is, if it is less than 80 nm, it is difficult to obtain high light-shielding performance, and 3
If the thickness exceeds 00 nm, the internal stress of the film increases, the film is peeled off, and the film formation time and the etching time tend to be unnecessarily long.

When a low-reflection layer is added to the first layer as shown in FIG.
The layer preferably has a thickness of about 10 to 100 nm. When the thickness is less than 10 nm, it is difficult to obtain a sufficient reflection suppressing performance, and when it exceeds 100 nm, the reflection suppressing performance hardly increases and a film forming time and an etching time are required. Therefore, a film thickness that satisfies the required reflection suppression performance may be selected within the above preferable range. The thickness of the second layer is 50 to 1000 n
m, but preferably about 80 to 300 nm. That is, if the thickness is less than 80 nm, it is difficult to obtain high light-shielding performance. If the thickness exceeds 300 nm, the internal stress of the film increases, the film is peeled off, and the film formation time and the etching time are unnecessarily long.

The light-shielding layer may have at least one light-shielding film. For example, a plurality of the above-mentioned films may be provided.

In the case of a film containing Ni and Ta as main components, the light-shielding property increases as the amount of metal components such as Ni and Ta increases with respect to the contained oxygen, nitrogen, and carbon. The more, the higher the transparency. Also, as with oxygen, the higher the content of nitrogen and carbon, the higher the transparency. However, compared to oxygen, the effect is small, and it is suitable for precisely controlling the transparency and the refractive index.

Therefore, by utilizing these characteristics, oxygen, nitrogen, carbon, and the like for the metal components such as Ni and Ta, which are the materials of the light-shielding layer, are satisfied so as to satisfy the desired light-shielding properties and etching properties, and further, the reflection suppressing performance. May be selected.

As a method of forming a black matrix pattern, a light-shielding film having a desired composition and thickness is formed on a substrate by a sputtering method or the like, and then a resist pattern is formed by photolithography, and etching is performed using this as a mask. Then, a desired black matrix pattern is formed.

Since the composition of a light-shielding film exhibiting good optical characteristics, durability and etching characteristics and the composition of a sputter target used for producing the same are almost the same, the results of X-ray fluorescence analysis are similar. In order to form a film, the composition of Ni and Ta is such that the ratio of the Ta to the atomic total of Ni and Ta is 15 to 40 atomic%, preferably 20 to 40 atomic%.
A sputter target having a metal composition containing Ni and Ta as main components in the above range is preferably used.

The light-shielding layer of the substrate with a light-shielding layer of the present invention can be manufactured by various manufacturing methods such as a vapor deposition method and a plating method. This is preferable in that a dense film having few hole defects can be formed.

At this time, an oxide film, a nitride film, a carbide film,
When obtaining an oxynitride film, oxygen,
It can be produced by adding an appropriate amount of nitrogen, methane, carbon dioxide gas or the like. Specifically, the flow rate of oxygen, nitrogen, methane, carbon dioxide gas, or the like may be changed experimentally so that the light-shielding layer obtains desired performance.

Depending on the manufacturing conditions at this time, for example, the entire film is not a uniform film having the same composition, but, for example, the degree of oxidation or the degree of nitridation is finely adjusted or changed stepwise or partially to form a light-shielding layer or a low reflection layer. Films with better performance as layers for the purposes of the present invention can be produced.

That is, the light-shielding layer or the low-reflection layer includes at least one thin film having the performance, and the inside of the film can be adjusted to have a uniform composition. An excellent substrate layer can be formed by changing the degree of the content ratio of other elements such as the degree of nitriding, the degree of nitriding, and the degree of carbonization stepwise. A desired substrate can be manufactured by configuring a plurality of films having different performances by using a plurality of films.

As a method for manufacturing a sputtering target, a casting method using vacuum melting, electron beam melting, or the like. Alternatively, there is a method of sintering each powder of Ni, Ta and the additive element. However, the most preferred manufacturing method is to sinter the NiTa-based alloy powder using a hot isostatic press. When manufactured by this method, segregation of the composition of the target is significantly reduced, and thereby segregation in the film is also reduced.
Such a film having less composition segregation is very useful in manufacturing because uniform etching properties and the like can be obtained. In addition, by alloying, the magnetism of the target can be reduced or eliminated. When such a target is used for magnetron sputtering, the leakage magnetic flux generated on the target surface is increased, and the productivity of the film can be improved.

In the substrate with a light-shielding layer according to the present invention, as described above, the light-shielding layer having high light-shielding performance is formed as a second layer on the first layer having a reflection suppressing function, which is a low reflection layer provided on the substrate. Those having two layers or a structure of two or more layers including this structure are preferable. In addition to these two layers, other layers can be added. For example, a low-reflection layer that suppresses reflection and a layer (durable layer) that protects the second layer are further formed on the second layer, or the adhesion between the first and second layers is further increased. Layers can also be added. As the durable layer, for example, an oxide film of the metal Ni or Ta is preferable.

FIG. 3 is a cross-sectional view of an example showing a color filter substrate using the substrate with a light-shielding layer of the present invention. In FIG. 1, the thickness of the light-shielding layer 2 is extremely large in order to explain the light-shielding layer, whereas in FIG. 3, the thickness of the light-shielding layer 2 is reduced in order to clearly show the relationship with other members. It is described thinly.

The color filter layer 4 may be manufactured by a known color filter manufacturing method, and includes a pigment dispersion method, a printing method,
It can be manufactured by employing a manufacturing method such as an electrodeposition method and an inkjet method. In the figure, the light-shielding layer is formed so as to partially overlap with the light-shielding layer. However, the light-shielding layer may be in close contact with each other, or the color filters may be in close contact with each other. Usually, color filter layers of three colors of RGB are arranged, but the present invention is not limited to this.

Although the insulating layer 5 on the color filter layer may not be provided, it is preferable that the insulating layer 5 is provided for protecting the color filter. Usually, the insulating layer 5 also serves as a flattening layer for smoothing the unevenness of the color filter layer. Specifically, resins such as acrylic resin, epoxy resin, silicone resin, polyimide, and polyamide are used. Further, a film of an inorganic substance such as SiO ₂ , SiN, or TiO ₂ may be formed on this layer for the purpose of improving the bonding property with the electrode.

The electrode 6 is made of ITO (In ₂ O ₃ --Sn
O _2), it may be used transparent electrodes of SnO _2, ZnO and the like. This electrode may be connected to an active element such as a TFT or MIM for each pixel electrode. Further, if necessary, an overcoat layer of an inorganic substance such as SiO ₂ or TiO ₂ or a resin such as an acrylic resin, an epoxy resin, a silicone resin, a polyimide, or a polyamide can be formed on the electrode.

Further, when used as a liquid crystal display element, an alignment film such as polyimide or polyamide may be applied on the electrode and the insulating layer, dried, and subjected to an alignment treatment by rubbing or the like. In the case of a liquid crystal display device, the color filter substrate thus formed and the separately manufactured electrode substrate may be arranged so that the electrode surfaces face each other, and a liquid crystal layer may be sandwiched between them.

As a liquid crystal layer sandwiched between the electrodes,
Nematic liquid crystals are used for ordinary twisted nematic (TN) type liquid crystal display devices, STN type liquid crystal display devices, and the like. In addition to liquid crystal liquids such as guest-host liquid crystal, cholesteric liquid crystal, and ferroelectric liquid crystal using a dichroic dye, solid polymer liquid crystal, and dispersed liquid crystal in which liquid crystal is dispersed in a resin matrix. Can also be used.

In the above description, an example in which the present invention is applied to a liquid crystal display element has been described. However, the substrate with a light shielding layer according to the present invention can be used for other elements with a light shielding layer, especially display elements such as PDP and EL.
It is also applicable to flat panel displays such as D and electrochromic display elements (ECD).

As described above, according to the present invention, a light-shielding layer which satisfies excellent optical performance such as light-shielding properties and anti-reflection performance and excellent durability such as chemical resistance and heat resistance and enables good etching is provided. In addition to providing a substrate, it is possible to provide various elements such as a color filter substrate having these excellent light-shielding layers as shown in FIG. 3 and a liquid crystal display element using them.

[0073]

The present invention will be described below in detail with reference to Examples (Examples 2 to 5) and Comparative Examples (Examples 1, 6 and 7).

(Example) A substrate of the present invention was manufactured based on FIG. A light-shielding film having the composition and composition shown in Table 1 was formed on a glass substrate ("AN glass" manufactured by Asahi Glass Co., Ltd.) by a magnetron sputtering method. As the target, an alloy target of Ta and Ni, a Ni target, and a Ta target shown in Table 1 were used. The composition of each film was confirmed by X-ray fluorescence, and was almost the same as that of the target used. The analysis results are shown in Table 1.

In Table 1, the composition ratio is the value of the atomic ratio (%) of Ta to the sum of Ni and Ta. 3% T of Example 1
aNi means that Ta is 3% by atomic ratio with respect to the sum of Ni and Ta. Example 7 is an example of 100% Ta.

In the method of manufacturing the NiTa alloy target, melting was performed in a vacuum melting furnace, and then gas atomization was performed using Ar gas to obtain a powder having a predetermined chemical composition. This powder was sintered at a temperature of 1200 ° C. under a pressure of 1.2 × 10 ⁸ Pa using a hot isostatic press.

A two-layer structure as shown in FIG. 1 is shown as an example. When sputtering the first layer, argon (A
r) The flow ratio of the gas to the oxygen (O ₂ ) gas was set to 1: 1 and the whole was set to 3 mTorr. The second layer is all argon (Ar)
Film formation was performed using only gas. The thickness of each layer is adjusted by the sputtering power and the film formation time.
All layers were 150 nm.

The heat resistance, alkali resistance, acid resistance, hot water resistance, and etchability with a hydrochloric acid-based etchant were investigated. The results are shown in Table 1. In addition, the evaluation of heat resistance evaluated the change of the optical density after standing at 250 degreeC in air for 1 hour. Evaluation of alkali resistance: 70 ° C, 5% by weight
The change in optical density after immersion in a sodium hydroxide aqueous solution for 30 minutes was evaluated. The acid resistance was evaluated by evaluating the change in optical density after immersion in a 5% by weight aqueous hydrochloric acid solution for 30 minutes at room temperature. For the evaluation of warm water resistance, the change in optical density after immersion in pure water at 80 ° C. for 1 hour was evaluated.

As a method of evaluating the durability test results, ◎ indicates that no change was observed in the optical density before and after the test, ○ indicates that no change was observed, and 場合 indicates that the change was slight but slight. Δ, when completely changed, was evaluated as x. The results are shown in Table 1 together with the etching evaluation.

As is clear from the results in Table 1, in the evaluation of durability, good results were obtained in Examples 2 to 7, but in Example 1, it was not at a practical level. When the amount of Ta is small as in Example 1, although it is soluble in the etching solution, there is a problem in acid resistance. Further, when the amount of Ta is large as in Examples 6 and 7, although all the durability is excellent, it becomes difficult to dissolve in the hydrochloric acid type etching solution. In Example 5, the etching rate was slightly longer than in Examples 2 to 4. If the etchant shows solubility, all show a nickel peak in the X-ray diffraction measurement.

On the other hand, in Examples 2 to 5, the performances balanced with the etching property and various durability were exhibited.
It can be seen that the result is better. As for the optical characteristics, the product of the present invention (Examples 2 to 5) had no problem.

[0082]

[Table 1]

[0083]

According to the present invention, a metal containing nickel (Ni) and tantalum (Ta) as main components and having a composition of Ta in an atomic ratio of 15 to 40%, preferably 20 to 40% with respect to the sum of Ni and Ta; The substrate with a light-shielding layer of the present invention containing at least one of a light-shielding layer made of a metal compound and a low-reflection layer has excellent optical performance, durability, and etching comparable to those of a conventional Cr-based metal light-shielding layer. Has performance and productivity.

In particular, as described above, it is preferable to form two or more layers of a low reflection layer and a light-shielding layer on the substrate in order. As the light-shielding layer, a metal or a compound thereof containing Ni and Ta as main components is used. In addition, the low-reflection layer can be provided with low-reflection performance by using a compound of these metals, preferably oxides, nitrides, carbides, oxynitrides, or the like, preferably containing Ni and Ta as main components. More preferably, when the low reflection layer is formed of the same metal material as the light shielding layer, advantages such as productivity are added.

The substrate with a light-shielding layer of the present invention can be used, for example, as a material for a light-shielding layer for the above-mentioned flat panel display. By using the substrate of the present invention,
The effect of the light-shielding layer having performance equivalent to the optical characteristics, durability, and etching properties of the conventional Cr-based light-shielding layer can be easily obtained.

The present invention can be applied to various applications without impairing the effects of the present invention.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a typical example showing a substrate with a light-shielding layer of the present invention.

FIG. 2 is a cross-sectional view of an example showing a substrate with a light-shielding layer of the present invention.

FIG. 3 is a sectional view of an example showing a color filter substrate of the present invention.

[Explanation of symbols]

 1: substrate 2: light shielding layer 3: low reflection layer 4: color filter layer 5: insulating layer 6: electrode

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yasuhiko Akao 4-2837-11 Yawatabara, Yonezawa-shi, Yamagata Prefecture Inside Asahi Glass Fine Techno Co., Ltd. (72) Inventor Akira Mitsui Akira Mitsui 1150 Hazawa-cho, Kanagawa-ku, Yokohama, Kanagawa Prefecture Asahi Glass Co., Ltd. (72) Inventor Satoru Takagi 1150 Hazawa-cho, Kanagawa-ku, Yokohama, Kanagawa Prefecture (72) Inventor Takeshi Kuboi 2107-2 Yasugi-cho, Yasugi City, Shimane Pref. Hitachi Metals Research Institute, Metallurgy Co., Ltd. (72) Inventor Tomonori Ueno 2107-2 Yasugi-cho, Yasugi City, Shimane Pref. (Reference) 2H042 AA06 AA15 AA26 2H048 BA11 BA53 BB01 BB14 BB24 BB26 BB44 4K029 BA50 BA55 BA58 BB02 BC07 CA06 DC04 DC09 DC39 5G435 AA00 AA14 AA17 BB05 BB06 BB12 BB13 FF03 FF13 GG12 HH02 KK07

Claims (10)

[Claims] 1. A metal and / or metal compound containing nickel (Ni) and tantalum (Ta) as main components and having a composition of Ta in an atomic ratio of 15 to 40% with respect to the sum of Ni and Ta. A substrate with a light-shielding layer, comprising at least one layer of a light-shielding layer and a low reflection layer. 2. The substrate with a light-shielding layer according to claim 1, wherein the composition of Ta is 20 to 40% by atomic ratio with respect to the sum of Ni and Ta. 3. The metal compound mainly composed of Ni and Ta is an oxide, nitride, carbide or a mixture of two or more kinds of metal mainly composed of Ni and Ta. 2. The substrate with a light-shielding layer according to 2. 4. Ni and Ta according to claim 1
And a light-shielding layer provided with a low-reflection layer on at least one of the upper and lower portions of the light-shielding layer containing: 5. Ni and Ta according to claim 1,
And a light-shielding layer provided with a light-shielding layer on one of the upper and lower portions of the low-reflection layer containing as a main component. 6. A low-reflection layer mainly composed of Ni and Ta is provided on at least one of an upper part and a lower part of a light-shielding layer mainly composed of Ni and Ta, and the light-shielding layer mainly comprises Ni and Ta. The low-reflection layer is composed of a metal and / or a nitride of the metal and / or an oxide of the metal and / or a carbide of the metal, and the low-reflection layer mainly includes Ni and Ta having a higher transmittance than the light-shielding layer. The substrate with a light-shielding layer according to any one of claims 1 to 5, comprising a metal oxide, a nitride, a carbide or an oxynitride thereof as a component. 7. A sputter target comprising Ni and Ta as main components and having a metal composition in which the composition of Ta is 15 to 40% in atomic ratio with respect to the sum of Ni and Ta. 8. A color filter substrate, characterized in that the substrate with a light-shielding layer according to claim 1 has a color filter layer. 9. A light-shielding layer and / or a low-reflection layer containing Ni and Ta as main components of the substrate with a light-shielding layer according to any one of claims 1 to 6, which is formed by a magnetron sputtering method. A method for manufacturing a substrate with a light-shielding layer. 10. A display element comprising the substrate with a light-shielding layer according to claim 1 or the color filter substrate according to claim 8.