JP2000114719A - Manufacture of multilayer printed wiring board - Google Patents
Manufacture of multilayer printed wiring boardInfo
- Publication number
- JP2000114719A JP2000114719A JP28804398A JP28804398A JP2000114719A JP 2000114719 A JP2000114719 A JP 2000114719A JP 28804398 A JP28804398 A JP 28804398A JP 28804398 A JP28804398 A JP 28804398A JP 2000114719 A JP2000114719 A JP 2000114719A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- layer
- conductor circuit
- substrate
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000010410 layer Substances 0.000 claims abstract description 91
- 229920005989 resin Polymers 0.000 claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 229910018104 Ni-P Inorganic materials 0.000 claims abstract description 24
- 229910018536 Ni—P Inorganic materials 0.000 claims abstract description 24
- 239000011229 interlayer Substances 0.000 claims abstract description 22
- 239000004094 surface-active agent Substances 0.000 claims abstract description 10
- 239000008139 complexing agent Substances 0.000 claims abstract description 8
- -1 hypophosphite ions Chemical class 0.000 claims abstract description 7
- 229910001453 nickel ion Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000010949 copper Substances 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 238000007747 plating Methods 0.000 abstract description 70
- 239000004020 conductor Substances 0.000 abstract description 58
- 229910045601 alloy Inorganic materials 0.000 abstract description 24
- 239000000956 alloy Substances 0.000 abstract description 24
- 230000002159 abnormal effect Effects 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 6
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001431 copper ion Inorganic materials 0.000 abstract description 5
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 34
- 238000007772 electroless plating Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 20
- 239000002245 particle Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 239000003054 catalyst Substances 0.000 description 12
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 238000001556 precipitation Methods 0.000 description 11
- 239000012790 adhesive layer Substances 0.000 description 10
- 229910000510 noble metal Inorganic materials 0.000 description 10
- 239000011135 tin Substances 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 239000000945 filler Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 230000005587 bubbling Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229920006015 heat resistant resin Polymers 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 150000007524 organic acids Chemical class 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 229910000365 copper sulfate Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- LXOFYPKXCSULTL-UHFFFAOYSA-N 2,4,7,9-tetramethyldec-5-yne-4,7-diol Chemical compound CC(C)CC(C)(O)C#CC(C)(O)CC(C)C LXOFYPKXCSULTL-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- GQZXNSPRSGFJLY-UHFFFAOYSA-N hydroxyphosphanone Chemical compound OP=O GQZXNSPRSGFJLY-UHFFFAOYSA-N 0.000 description 2
- 229940005631 hypophosphite ion Drugs 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000011133 lead Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- NUYADIDKTLPDGG-UHFFFAOYSA-N 3,6-dimethyloct-4-yne-3,6-diol Chemical compound CCC(C)(O)C#CC(C)(O)CC NUYADIDKTLPDGG-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NVEQHMCRCNAQRQ-UHFFFAOYSA-J NC(N)=S.Cl[Sn](Cl)(Cl)Cl Chemical compound NC(N)=S.Cl[Sn](Cl)(Cl)Cl NVEQHMCRCNAQRQ-UHFFFAOYSA-J 0.000 description 1
- 241000238413 Octopus Species 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical group OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、多層プリント配線
板の製造方法に関し、特に粗化めっきであるCu−Ni
−P合金めっき層の未析出または異常析出を防止するこ
とができる多層プリント配線板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a multilayer printed wiring board, and more particularly to a method for forming a roughened plating Cu--Ni.
The present invention relates to a method for manufacturing a multilayer printed wiring board capable of preventing unprecipitated or abnormal deposition of a P alloy plating layer.
【0002】[0002]
【従来の技術】近年、多層配線板の高密度化の要請か
ら、いわゆる多層ビルドアップ配線基板と呼ばれる多層
プリント配線板が注目されている。この多層ビルドアッ
プ配線基板は、コアと呼ばれる100〜1000μm程
度のガラスクロス等で補強された樹脂基板の上に、銅等
による配線層と層間樹脂絶縁層とが交互に積層され、コ
アを挟んだ配線層同士はスルーホールにより、また、層
間樹脂絶縁層を挟んだ配線層はバイアホールにより、そ
れぞれ電気的に接続されて構成されている。2. Description of the Related Art In recent years, a multilayer printed wiring board called a so-called multilayer build-up wiring board has attracted attention due to a demand for higher density of the multilayer wiring board. In this multilayer build-up wiring board, a wiring layer made of copper or the like and an interlayer resin insulation layer are alternately laminated on a resin substrate reinforced with a glass cloth of about 100 to 1000 μm called a core, and the core is sandwiched therebetween. The wiring layers are electrically connected by through holes, and the wiring layers sandwiching the interlayer resin insulation layer are electrically connected by via holes.
【0003】この多層ビルドアップ配線基板を製造する
際には、例えば、特開平6−283860号公報に開示
された方法を用いる。即ち、まず、基板上に形成された
内層導体回路表面に無電解めっきによりCu−Ni−P
からなる針状合金の粗化層を設け、ついで、この粗化層
の上に層間樹脂絶縁層を形成した後、この層間樹脂絶縁
層にバイアホール形成用の開孔を設ける。When manufacturing this multilayer build-up wiring board, for example, a method disclosed in Japanese Patent Application Laid-Open No. 6-283860 is used. That is, first, Cu—Ni—P is formed on the surface of the inner conductor circuit formed on the substrate by electroless plating.
A roughened layer of a needle-shaped alloy is formed, and then an interlayer resin insulating layer is formed on the roughened layer, and then an opening for forming a via hole is provided in the interlayer resin insulating layer.
【0004】その後、この基板にめっき処理を施し、開
孔に導体を充填するとともに、層間樹脂絶縁層上に外層
導体回路を形成する。さらに、このような導体回路の形
成と層間樹脂絶縁層の形成とを繰り返すことにより多層
化が図られる。[0004] Thereafter, the substrate is subjected to a plating treatment to fill the openings with a conductor and form an outer conductor circuit on the interlayer resin insulating layer. Further, by repeating the formation of such a conductor circuit and the formation of the interlayer resin insulating layer, a multi-layer structure can be achieved.
【0005】このような特開平6−283860号公報
に開示された方法によれば、多層ビルドアップ配線基板
では、導体回路上に形成されたCu−Ni−Pからなる
針状合金により、該導体回路とその上に形成される層間
樹脂絶縁層との密着性を確保することができる。According to the method disclosed in Japanese Patent Application Laid-Open No. 6-283860, in a multilayer build-up wiring board, the conductor is formed by a needle-like alloy made of Cu-Ni-P formed on a conductor circuit. Adhesion between the circuit and the interlayer resin insulating layer formed thereon can be ensured.
【0006】[0006]
【発明が解決しようとする課題】このCu−Ni−Pか
らなる針状合金めっき処理を行う際には、導体回路が形
成された基板を、銅イオン、ニッケルイオン、錯化剤、
次亜リン酸イオン等を含むめっき液に浸漬し、導体回路
表面に針状めっきを析出させるのであるが、このような
操作を行ってもめっき反応が進行しない場合(未析出)
があり、逆に、反応が進行しすぎて導体回路以外の部分
に針状めっきが析出する場合(異常析出)もあり、再現
性のある結果を得ることができないという問題点があっ
た。When performing the needle-like alloy plating process of Cu-Ni-P, the substrate on which the conductor circuit is formed is treated with copper ions, nickel ions, a complexing agent,
It is immersed in a plating solution containing hypophosphite ions and the like to deposit needle-like plating on the surface of the conductor circuit. If the plating reaction does not proceed even after such an operation (no deposition)
On the contrary, there is also a problem that the reaction progresses too much and needle-like plating is deposited on a portion other than the conductor circuit (abnormal deposition), so that a reproducible result cannot be obtained.
【0007】本発明は、このような従来技術の問題点を
解決するためになされたもので、その目的は、導体回路
が形成された基板にCu−Ni−Pからなる針状合金め
っき処理を行う際、異常析出や未析出を防止し、Cu−
Ni−Pからなる針状合金めっき層を良好に形成するこ
とができる多層プリント配線板の製造方法を提供するこ
とにある。SUMMARY OF THE INVENTION The present invention has been made to solve such problems of the prior art, and an object of the present invention is to perform a needle-like alloy plating process made of Cu-Ni-P on a substrate on which a conductive circuit is formed. When performing, prevent abnormal precipitation and non-precipitation, Cu-
It is an object of the present invention to provide a method for manufacturing a multilayer printed wiring board that can favorably form a needle-like alloy plating layer made of Ni-P.
【0008】[0008]
【課題を解決するための手段】発明者は、上記目的の実
現に向け鋭意研究した結果、異常析出および未析出の原
因が、めっき液中の溶存酸素濃度にあることを知見し
た。即ち、めっき液中の溶存酸素濃度が高いほどめっき
反応が進行しにくくなり、一方、めっき液中の溶存酸素
濃度が低くなるに従って、めっき反応が進行しやすくな
る。通常、65〜75℃のめっき液は、液攪拌を目的と
して、空気バブリングされるため、めっき液中の溶存酸
素濃度は3ppm以上と高く、導体回路が形成された基
板をめっき液に浸漬しても、めっき反応は進行しにく
い。また、めっき反応が進行するに伴って、発生する水
素とめっき液中の酸素とが反応して液中の酸素濃度が減
少し、そのため、異常析出現象が生じてしまう。以上の
結果に基づいて、発明者が想到した発明の要旨構成は以
下のとおりである。 (1) 導体回路が設けられた基板上に、層間樹脂絶縁層と
新たな導体回路とを順次積層形成し、多層化する多層プ
リント配線板の製造方法であって、前記導体回路が形成
された基板を、銅イオン、ニッケルイオン、錯化剤、次
亜リン酸イオンおよび界面活性剤を含む水溶液に浸漬
し、その溶存酸素濃度を1.5〜2.5ppmに調整し
て前記導体回路上にCu−Ni−Pからなる粗化層を形
成することを特徴とする多層プリント配線板の製造方法
である。Means for Solving the Problems The inventor of the present invention has made intensive studies for realizing the above object, and as a result, has found that abnormal precipitation and non-precipitation are caused by the dissolved oxygen concentration in the plating solution. That is, the higher the concentration of dissolved oxygen in the plating solution, the more difficult the plating reaction to proceed. On the other hand, the lower the concentration of dissolved oxygen in the plating solution, the easier the plating reaction to proceed. Usually, since the plating solution of 65 to 75 ° C. is bubbled with air for the purpose of stirring the solution, the dissolved oxygen concentration in the plating solution is as high as 3 ppm or more, and the substrate on which the conductor circuit is formed is immersed in the plating solution. However, the plating reaction hardly proceeds. Further, as the plating reaction proceeds, the generated hydrogen reacts with the oxygen in the plating solution to decrease the oxygen concentration in the solution, thereby causing an abnormal precipitation phenomenon. Based on the above results, the gist configuration of the invention conceived by the inventor is as follows. (1) A method for manufacturing a multilayer printed wiring board in which an interlayer resin insulating layer and a new conductor circuit are sequentially laminated and formed on a substrate provided with a conductor circuit, and the conductor circuit is formed. The substrate is immersed in an aqueous solution containing a copper ion, a nickel ion, a complexing agent, a hypophosphite ion and a surfactant, and the dissolved oxygen concentration is adjusted to 1.5 to 2.5 ppm to form a substrate on the conductor circuit. A method for manufacturing a multilayer printed wiring board, comprising forming a roughened layer made of Cu-Ni-P.
【0009】[0009]
【発明の実施の形態】本発明は、基板上に内層導体回路
または外層導体回路を形成した後、前記導体回路が形成
された基板を、銅イオン、ニッケルイオン、錯化剤、次
亜リン酸イオンおよび界面活性剤を含む水溶液に浸漬
し、その溶存酸素濃度を1.5〜2.5ppmに調整し
て前記導体回路上にCu−Ni−Pからなる粗化層を形
成することに特徴がある。このような本発明の構成によ
れば、めっき液中の溶存酸素濃度を1.5〜2.5pp
mに調整しているため、初期の溶存酸素濃度が低く、上
記導体回路上への未析出がない。また、めっき反応が進
行しても溶存酸素濃度を一定の範囲に保持しているた
め、異常析出を防止することができる。溶存酸素濃度
は、不活性ガスのバブリングにより減り、逆に空気のバ
ブリングにより高くなる。そこで、不活性ガスまたは空
気のバブリングを行うことにより、溶存酸素濃度を調整
する。溶存酸素濃度の測定は、Orbisphere
Laboratories Japan社製の酸素計
3600により行う。前記不活性ガスとしては、例え
ば、窒素、アルゴン等を使用することができる。BEST MODE FOR CARRYING OUT THE INVENTION According to the present invention, after an inner conductor circuit or an outer conductor circuit is formed on a substrate, the substrate on which the conductor circuit is formed is treated with copper ions, nickel ions, a complexing agent, and hypophosphorous acid. It is characterized in that it is immersed in an aqueous solution containing ions and a surfactant and the dissolved oxygen concentration is adjusted to 1.5 to 2.5 ppm to form a roughened layer made of Cu-Ni-P on the conductor circuit. is there. According to the configuration of the present invention, the concentration of dissolved oxygen in the plating solution is set to 1.5 to 2.5 pp.
m, the initial dissolved oxygen concentration is low, and there is no non-precipitation on the conductor circuit. Further, since the dissolved oxygen concentration is kept within a certain range even if the plating reaction proceeds, abnormal deposition can be prevented. The dissolved oxygen concentration is reduced by bubbling of an inert gas, and is increased by bubbling of air. Therefore, the dissolved oxygen concentration is adjusted by bubbling an inert gas or air. The dissolved oxygen concentration is measured by Orbisphere.
Oxygen meter manufactured by Laboratories Japan
3600. As the inert gas, for example, nitrogen, argon, or the like can be used.
【0010】Cu−Ni−Pからなる針状合金の粗化層
は、その全体の厚みが1〜7μmであるのが望ましい。
上記厚みにした場合、層間樹脂絶縁層の間隔、および、
導体回路の間隔を従来の多層プリント配線板に比べて小
さく設定することができ、多層プリント配線板の高密度
化及び軽量化を図ることができるからである。The roughened layer of the needle-shaped alloy made of Cu-Ni-P preferably has an overall thickness of 1 to 7 µm.
In the case of the above thickness, the interval between the interlayer resin insulating layers, and,
This is because the interval between the conductor circuits can be set smaller than that of the conventional multilayer printed wiring board, and the density and weight of the multilayer printed wiring board can be reduced.
【0011】Cu−Ni−Pからなる合金の粗化層の形
状は、針状または多孔質状が好ましい。上記粗化層をめ
っき処理により形成する際、上記粗化層の形状は、界面
活性剤の種類等により変化するが、針状または多孔質状
の粗化層を形成できる条件を選択する必要がある。The shape of the roughened layer of the alloy made of Cu-Ni-P is preferably acicular or porous. When the roughened layer is formed by plating, the shape of the roughened layer changes depending on the type of surfactant and the like, but it is necessary to select conditions that can form a needle-shaped or porous roughened layer. is there.
【0012】また、上記Cu−Ni−Pからなる合金の
粗化層の表面には、イオン化傾向が銅よりも大きく、か
つ、チタン以下である金属、または、貴金属からなる被
覆層が形成されていることが望ましい。また、この粗化
層被覆層の厚さは、0.1〜2μmが好ましい。これら
の金属の被覆層が形成されることにより、電解質溶液と
粗化層との直接の接触を防止することができる。A coating layer made of a metal whose ionization tendency is larger than that of copper and not more than titanium or a noble metal is formed on the surface of the roughened layer of the alloy made of Cu-Ni-P. Is desirable. Further, the thickness of the roughened layer coating layer is preferably 0.1 to 2 μm. By forming the coating layer of these metals, direct contact between the electrolyte solution and the roughened layer can be prevented.
【0013】イオン化傾向が銅より大きく、かつ、チタ
ン以下である金属としては、例えば、チタン、アルミニ
ウム、亜鉛、鉄、インジウム、タリウム、コバルト、ニ
ッケル、スズ、鉛、ビスマス等が挙げられ、これらのな
かでは、スズ、ニッケル、コバルト、鉄、鉛等が、緻密
な酸化膜を形成することができるので有利である。ま
た、上記貴金属としては、例えば、金、銀、白金、パラ
ジウム等が挙げられる。従って、上記粗化層被覆層に
は、上記金属および上記貴金属から選ばれる少なくとも
1種を用いることができる。これらの金属および貴金属
のうちでは、特にスズが好ましい。スズは、無電解置換
めっきにより薄い層を形成でき、粗化層の凹凸に沿って
析出形成できるからである。上記金属としてスズを用い
る場合には、ホウフッ化スズ−チオ尿素液または塩化ス
ズ−チオ尿素液を使用する。この場合、Cu−Snの置
換反応により0.1〜2μm程度のSn層が形成され
る。また、貴金属を用いる場合には、スパッタや蒸着な
どの方法を採用することができる。Examples of the metal having an ionization tendency larger than that of copper and not more than titanium include titanium, aluminum, zinc, iron, indium, thallium, cobalt, nickel, tin, lead, bismuth and the like. Among them, tin, nickel, cobalt, iron, lead and the like are advantageous because they can form a dense oxide film. Examples of the noble metal include gold, silver, platinum, and palladium. Therefore, at least one selected from the metals and the noble metals can be used for the roughened layer coating layer. Among these metals and noble metals, tin is particularly preferred. This is because tin can form a thin layer by electroless displacement plating and can be deposited and formed along the irregularities of the roughened layer. When tin is used as the metal, a tin borofluoride-thiourea solution or a tin chloride-thiourea solution is used. In this case, a Sn layer having a thickness of about 0.1 to 2 μm is formed by the substitution reaction of Cu—Sn. When a noble metal is used, a method such as sputtering or vapor deposition can be employed.
【0014】次に、本発明において、導体回路の表面に
Cu−Ni−Pからなる合金のめっき層を析出成長さ
せ、粗化層を形成するためのめっき方法について説明す
る。本発明では、内層導体回路または外層導体回路が形
成された基板を、錯化剤、銅化合物、ニッケル化合物、
次亜リン酸塩、アセチレン含有ポリオキシエチレン系界
面活性剤からなるめっき水溶液中に浸漬し、基板に振動
または揺動を与える方法により、または、金属イオンを
供給せしめることにより、Cu−Ni−Pからなる多孔
質または針状の合金を析出成長させ、合金の粗化層を形
成する。なお、めっき水溶液は、銅イオン濃度、ニッケ
ルイオン濃度、次亜リン酸イオン濃度、錯化剤濃度が、
それぞれ0.007〜0.160mol/l、0.00
1〜0.023mol/l、0.1〜1.0mol/
l、0.01〜0.2mol/lとなるように調整して
おくことが望ましい。また、界面活性剤の濃度は、0.
01〜10g/lとなるように調整しておくのが望まし
い。Next, a plating method for forming a roughened layer by depositing and growing a plating layer of an alloy of Cu-Ni-P on the surface of a conductor circuit in the present invention will be described. In the present invention, the substrate on which the inner conductor circuit or the outer conductor circuit is formed, a complexing agent, a copper compound, a nickel compound,
Cu-Ni-P is immersed in an aqueous plating solution consisting of hypophosphite and acetylene-containing polyoxyethylene-based surfactant to give vibration or oscillation to the substrate, or by supplying metal ions. A porous or needle-shaped alloy consisting of is deposited and grown to form a roughened layer of the alloy. The aqueous plating solution has a copper ion concentration, a nickel ion concentration, a hypophosphite ion concentration, and a complexing agent concentration,
0.007 to 0.160 mol / l, 0.00
1 to 0.023 mol / l, 0.1 to 1.0 mol /
1, it is desirable to adjust so as to be 0.01 to 0.2 mol / l. Further, the concentration of the surfactant is 0.1.
It is desirable to adjust so as to be 01 to 10 g / l.
【0015】上記錯化剤としては、例えば、クエン酸、
酒石酸、リンゴ酸、EDTA、クワドロール、グリシン
等が挙げられる。アセチレン含有ポリオキシエチレン系
界面活性剤としては、下記の(1)、(2)式のような
構造を有するものを使用することが最適である。このよ
うな界面活性剤としては、例えば、2,4,7,9−テ
トラメチル−5−デシン−4,7−ジオール、3,6−
ジメチル−4−オクチン−3,6−ジオール等のアルキ
ンジオール等が挙げられる。これらの市販品としては、
例えば、日信化学工業社製のサーフィノール104(多
孔質状)、同440、同465、同485(いずれも針
状)等が挙げられる。As the complexing agent, for example, citric acid,
Tartaric acid, malic acid, EDTA, quadrol, glycine and the like. As the acetylene-containing polyoxyethylene-based surfactant, it is most preferable to use one having a structure represented by the following formulas (1) and (2). Such surfactants include, for example, 2,4,7,9-tetramethyl-5-decyne-4,7-diol, 3,6-
Alkynediols such as dimethyl-4-octyne-3,6-diol and the like can be mentioned. These commercial products include:
For example, Surfynol 104 (porous), 440, 465, and 485 (all needle-shaped) manufactured by Nissin Chemical Co., Ltd. can be used.
【0016】[0016]
【化1】 Embedded image
【0017】(上記(1)式中、m、nは、その和が3
〜30となる整数を表し、上記(2)式中、R1 および
R2 はアルキル基、R3 およびR4 は水素原子または低
級アルキル基を表す。)このような無電解めっき液から
析出するCu−Ni−P合金は、その表面は、針状ある
いは多孔質状になる。多孔質合金の場合は、その微孔の
数は、1cm2 当たり100,000〜1,000,0
00の範囲内にあり、一般には、3,000,000〜
300,000,000の範囲に含まれるものである。
また、その微孔の径は、0.01〜100μmの範囲
内、一般には0.1〜10μmの範囲に含まれるもので
ある。(In the above formula (1), m and n are 3
In the formula (2), R 1 and R 2 represent an alkyl group, and R 3 and R 4 represent a hydrogen atom or a lower alkyl group. ) The surface of the Cu-Ni-P alloy precipitated from such an electroless plating solution becomes acicular or porous. In the case of a porous alloy, the number of micropores is 100,000 to 1,000,000 per cm 2.
00, generally between 3,000,000 and
It is included in the range of 300,000,000.
The diameter of the micropores is in the range of 0.01 to 100 μm, generally in the range of 0.1 to 10 μm.
【0018】本発明では、上記導体回路上に形成する層
間樹脂絶縁層として無電解めっき用接着剤を用いること
が望ましい。この無電解めっき用接着剤は、硬化処理さ
れた酸または酸化剤に可溶性の耐熱性樹脂粒子が、酸あ
るいは酸化剤に難溶性の未硬化の耐熱性樹脂中に分散さ
れてなるものが最適である。酸あるいは酸化剤の溶液で
処理することにより、耐熱性樹脂粒子が溶解除去され
て、この接着剤層の表面に蛸つぼ状のアンカーからなる
粗化面を形成できるからである。In the present invention, it is desirable to use an adhesive for electroless plating as an interlayer resin insulating layer formed on the conductor circuit. The most suitable adhesive for electroless plating is one in which heat-resistant resin particles soluble in a cured acid or oxidizing agent are dispersed in an uncured heat-resistant resin hardly soluble in an acid or an oxidizing agent. is there. By treating with an acid or oxidizing agent solution, the heat-resistant resin particles are dissolved and removed, and a roughened surface composed of an octopus pot-shaped anchor can be formed on the surface of the adhesive layer.
【0019】上記無電解めっき用接着剤において、特に
硬化処理された上記耐熱性樹脂粒子としては、1)平均粒
径が10μm以下の耐熱性樹脂粉末、2)平均粒子径が相
対的に大きな粒子と平均粒子径が相対的に小さな粒子を
混合した粒子が望ましい。これらは、より複雑なアンカ
ーを形成できるからである。使用できる耐熱性樹脂とし
ては、例えば、エポキシ樹脂、ポリイミド樹脂、エポキ
シ樹脂と熱可塑性樹脂との複合体等が挙げられる。複合
させる熱可塑性樹脂としては、例えば、ポリエーテルス
ルホン(PES)等が挙げられる。また、酸や酸化剤の
溶液に溶解する耐熱性樹脂粒子としては、例えば、エポ
キシ樹脂(特にアミン系硬化剤で硬化させたエポキシ樹
脂がよい)、アミノ樹脂等が挙げられる。また、本発明
で使用されるソルダーレジストとしては、例えば、エポ
キシ樹脂アクリレートおよびイミダゾール硬化剤からな
るものが挙げられる。In the above-mentioned adhesive for electroless plating, in particular, the cured heat-resistant resin particles include: 1) heat-resistant resin powder having an average particle diameter of 10 μm or less; 2) particles having a relatively large average particle diameter. And particles having a relatively small average particle diameter. This is because they can form more complex anchors. Examples of the heat-resistant resin that can be used include an epoxy resin, a polyimide resin, and a composite of an epoxy resin and a thermoplastic resin. Examples of the thermoplastic resin to be composited include polyether sulfone (PES). Examples of the heat-resistant resin particles soluble in a solution of an acid or an oxidizing agent include, for example, an epoxy resin (especially an epoxy resin cured with an amine-based curing agent), an amino resin, and the like. Further, as the solder resist used in the present invention, for example, a resist composed of an epoxy resin acrylate and an imidazole curing agent can be mentioned.
【0020】次に、本発明の多層プリント配線板を製造
する一方法について説明する。 (1) まず、コア基板の表面に内層銅パターン(内層導体
回路)を形成した配線基板を作製する。このコア基板へ
の内層導体回路の形成は、銅貼積層板をエッチングする
ことにより行うか、または、以下の方法により行う。即
ち、ガラスエポキシ基板、ポリイミド基板、セラミック
基板、金属基板等の基板上に無電解めっき用接着剤の層
を形成し、続いて、この接着剤層表面を粗化した後、電
解めっきにより導体層を形成し、この導体層をエッチン
グして内層導体回路を形成する。Next, one method of manufacturing the multilayer printed wiring board of the present invention will be described. (1) First, a wiring board having an inner copper pattern (inner conductor circuit) formed on a surface of a core board is manufactured. The formation of the inner conductor circuit on the core substrate is performed by etching the copper-clad laminate or by the following method. That is, a layer of an adhesive for electroless plating is formed on a substrate such as a glass epoxy substrate, a polyimide substrate, a ceramic substrate, or a metal substrate, and then, after the surface of the adhesive layer is roughened, a conductive layer is formed by electrolytic plating. Is formed, and this conductor layer is etched to form an inner conductor circuit.
【0021】なお、コア基板には、スルーホールが形成
され、このスルーホールを介して表面と裏面の配線層が
電気的に接続される。また、スルーホールおよびコア基
板の内層導体回路間には樹脂が充填され、平滑性が確保
されていてもよい。特に本発明では、コア基板の内層導
体回路表面、スルーホールのランド表面に、前述した方
法により多孔質または針状のCu−Ni−Pからなる合
金の粗化層を形成する。即ち、めっき液の溶存酸素濃度
を1.5〜2.5ppmに調整した後、内層導体回路が
形成された基板をめっき液に浸漬し、上記内層導体回路
の上にCu−Ni−Pからなる合金の粗化層を形成す
る。なお、この粗化層の表面に、イオン化傾向が銅より
も大きく、かつ、チタン以下である金属、または、貴金
属からなる被覆層を形成してもよい。A through hole is formed in the core substrate, and the front and rear wiring layers are electrically connected through the through hole. Further, resin may be filled between the through-holes and the inner conductor circuit of the core substrate to ensure smoothness. Particularly, in the present invention, a roughened layer of a porous or needle-like Cu-Ni-P alloy is formed on the inner conductor circuit surface of the core substrate and the land surface of the through hole by the above-described method. That is, after adjusting the dissolved oxygen concentration of the plating solution to 1.5 to 2.5 ppm, the substrate on which the inner conductor circuit is formed is immersed in the plating solution, and Cu-Ni-P is formed on the inner conductor circuit. A roughened layer of the alloy is formed. In addition, you may form the coating layer which consists of a metal whose ionization tendency is larger than copper and is titanium or less, or a noble metal on the surface of this roughened layer.
【0022】(2) 次に、上記(1) で作製した配線基板の
上に、層間樹脂絶縁層を形成する。特に本発明では、層
間樹脂絶縁層の材料として前述した無電解めっき用接着
剤を用いることが望ましい。 (3) 形成した無電解めっき用接着剤層を乾燥した後、必
要に応じてバイアホール形成用の開孔を設ける。感光性
樹脂の場合は、露光、現像してから熱硬化することによ
り、また、熱硬化性樹脂の場合は、熱硬化したのちレー
ザー加工することにより、上記層間樹脂絶縁層にバイア
ホール形成用の開孔を設ける。(2) Next, an interlayer resin insulating layer is formed on the wiring board manufactured in the above (1). In particular, in the present invention, it is desirable to use the above-mentioned adhesive for electroless plating as a material of the interlayer resin insulating layer. (3) After the formed adhesive layer for electroless plating is dried, openings for forming via holes are provided as necessary. In the case of a photosensitive resin, by exposing and developing and then thermosetting, and in the case of a thermosetting resin, by thermosetting and then laser processing, a via hole is formed in the interlayer resin insulating layer. An opening is provided.
【0023】(4) 次に、硬化した上記無電解めっき用接
着剤層(層間樹脂絶縁層)の表面に存在する酸や酸化剤
に可溶性の樹脂粒子を酸または酸化剤によって溶解除去
し、無電解めっき用接着剤層の表面を粗化する。ここ
で、上記酸としては、例えば、リン酸、塩酸、硫酸等の
鉱酸;蟻酸、酢酸等の有機酸等が挙げられるが、特に有
機酸を用いることが望ましい。有機酸を用いると、粗化
処理の際、バイアホールから露出する金属導体層を腐食
させにくいからである。一方、上記酸化剤としては、ク
ロム酸、過マンガン酸塩(過マンガン酸カリウム等)の
水溶液を用いることが望ましい。(4) Next, resin particles soluble in an acid or an oxidizing agent present on the surface of the cured adhesive layer for electroless plating (interlayer resin insulating layer) are dissolved and removed with an acid or an oxidizing agent. The surface of the adhesive layer for electrolytic plating is roughened. Here, examples of the acid include mineral acids such as phosphoric acid, hydrochloric acid, and sulfuric acid; and organic acids such as formic acid and acetic acid. It is particularly preferable to use an organic acid. This is because when an organic acid is used, the metal conductor layer exposed from the via hole is hardly corroded during the roughening treatment. On the other hand, as the oxidizing agent, it is desirable to use an aqueous solution of chromic acid or permanganate (such as potassium permanganate).
【0024】(5) 次に、層間樹脂絶縁層表面を粗化した
配線基板に触媒核を付与する。触媒核の付与には、貴金
属イオンや貴金属コロイド等を用いることが望ましく、
一般的には、塩化パラジウムやパラジウムコロイドを使
用する。なお、触媒核を固定するために加熱処理を行う
ことが望ましい。このような触媒核としてはパラジウム
が好ましい。(5) Next, a catalyst nucleus is applied to the wiring board whose surface has been roughened. It is desirable to use a noble metal ion or a noble metal colloid for providing the catalyst nucleus,
Generally, palladium chloride or palladium colloid is used. Note that it is desirable to perform a heat treatment to fix the catalyst core. Palladium is preferred as such a catalyst core.
【0025】(6) 次に、触媒核を付与した層間樹脂絶縁
層の表面に無電解めっきを施し、粗化面全面に無電解め
っき膜を形成する。無電解めっき膜の厚みは、0.5〜
5μmが好ましい。次に、無電解めっき膜上にめっきレ
ジストを形成する。(6) Next, electroless plating is performed on the surface of the interlayer resin insulating layer provided with the catalyst nucleus, and an electroless plating film is formed on the entire roughened surface. The thickness of the electroless plating film is 0.5 to
5 μm is preferred. Next, a plating resist is formed on the electroless plating film.
【0026】(7) 次に、めっきレジスト非形成部に5〜
20μmの厚みの電気めっきを施し、外層導体回路およ
びバイアホールを形成する。また、電気めっき後に、エ
ッチングレジストとして、ニッケル、スズ、コバルト、
貴金属から選ばれる少なくとも1種以上の金属層を形成
してもよい。これらの金属層上には、Cu−Ni−Pか
らなる合金めっきが析出しやすいからである。また、こ
れらの金属層はメタルレジストとして作用するため、こ
の後のエッチング工程でも過剰エッチングを防止すると
いう効果を奏する。ここで、上記電気めっきとしては、
銅めっきを用いることが望ましい。さらに、めっきレジ
ストを除去した後、そのめっきレジストの下に存在して
いた無電解めっき膜を、硫酸と過酸化水素の混合液や過
硫酸ナトリウム、過硫酸アンモニウム等の水溶液からな
るエッチング液で溶解除去し、独立した外層導体回路と
する。(7) Next, 5 to 5
Electroplating with a thickness of 20 μm is performed to form outer conductor circuits and via holes. After electroplating, nickel, tin, cobalt,
At least one or more metal layers selected from noble metals may be formed. This is because alloy plating made of Cu-Ni-P tends to precipitate on these metal layers. Further, since these metal layers act as a metal resist, there is an effect that excessive etching is prevented even in the subsequent etching step. Here, as the electroplating,
It is desirable to use copper plating. Furthermore, after the plating resist is removed, the electroless plating film existing under the plating resist is dissolved and removed with an etching solution comprising a mixed solution of sulfuric acid and hydrogen peroxide or an aqueous solution of sodium persulfate, ammonium persulfate, or the like. And an independent outer conductor circuit.
【0027】(8) ついで、(1) の場合と同様に、めっき
液の溶存酸素濃度を1.5〜2.5ppmに調整した
後、外層導体回路が形成された基板をめっき液に浸漬
し、上記外層導体回路の上に多孔質なCu−Ni−Pか
らなる合金の粗化層を形成する。この粗化層の表面に、
イオン化傾向が銅よりも大きく、かつ、チタン以下であ
る金属、または、貴金属からなる被覆層を形成してもよ
い。(8) Next, similarly to the case (1), after adjusting the dissolved oxygen concentration of the plating solution to 1.5 to 2.5 ppm, the substrate on which the outer conductor circuit is formed is immersed in the plating solution. Then, a roughened layer of a porous alloy of Cu-Ni-P is formed on the outer layer conductor circuit. On the surface of this roughened layer,
A coating layer made of a metal having a higher ionization tendency than copper and not more than titanium or a noble metal may be formed.
【0028】(9) 次に、この基板上に層間樹脂絶縁層と
して、無電解めっき用接着剤の層を形成する。 (10)さらに、上記 (3)〜(8) の工程を繰り返して上層の
外層導体回路を設け、片面3層の6層両面多層プリント
配線板を得る。(9) Next, an adhesive layer for electroless plating is formed on the substrate as an interlayer resin insulating layer. (10) Further, the above steps (3) to (8) are repeated to provide an upper outer-layer conductor circuit, thereby obtaining a six-layer double-sided multilayer printed wiring board having three layers on one side.
【0029】なお、以上の説明は、セミアディティブ法
と呼ばれる方法によりプリント配線板を製造する例であ
るが、無電解めっき用接着剤層を粗化した後、触媒核を
付与し、めっきレジストを設けて、無電解めっきを行い
導体回路を形成する、いわゆるフルアディティブ法にも
適用することが可能である。The above description is an example in which a printed wiring board is manufactured by a method called a semi-additive method. After roughening an adhesive layer for electroless plating, a catalyst nucleus is provided, and a plating resist is formed. The method can be applied to a so-called full additive method in which a conductive circuit is formed by performing electroless plating.
【0030】[0030]
【実施例】以下、本発明を実施例に基づいて説明する。 (実施例1) A.無電解めっき用接着剤の調製 1)クレゾールノボラック型エポキシ樹脂(日本化薬社
製、分子量:2500)の25%アクリル化物35重量
部、感光性モノマー(東亜合成社製、アロニックスM3
25)3.15重量部、消泡剤0.5重量部およびN−
メチルピロリドン(NMP)3.6重量部を容器にと
り、攪拌混合することにより混合組成物を調製した。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on embodiments. Example 1 A. Preparation of adhesive for electroless plating 1) 35 parts by weight of 25% acrylate of cresol novolac type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., molecular weight: 2500), photosensitive monomer (Toa Gosei Co., Aronix M3)
25) 3.15 parts by weight, 0.5 parts by weight of defoamer and N-
A mixed composition was prepared by placing 3.6 parts by weight of methylpyrrolidone (NMP) in a container and mixing with stirring.
【0031】2)ポリエーテルスルフォン(PES)12
重量部、エポキシ樹脂粒子(三洋化成社製、ポリマーポ
ール)の平均粒径1.0μmのもの7.2重量部および
平均粒径0.5μmのもの3.09重量部を別の容器に
とり、攪拌混合した後、さらにNMP30重量部を添加
し、ビーズミルで攪拌混合し、別の混合組成物を調製し
た。2) Polyether sulfone (PES) 12
Parts by weight, 7.2 parts by weight of an epoxy resin particle (manufactured by Sanyo Kasei Co., polymer pole) having an average particle size of 1.0 μm and 3.09 parts by weight of an epoxy resin particle having an average particle size of 0.5 μm were placed in another container and stirred. After mixing, 30 parts by weight of NMP was further added and stirred and mixed by a bead mill to prepare another mixed composition.
【0032】3)イミダゾール硬化剤(四国化成社製、2
E4MZ−CN)2重量部、光重合開始剤であるベンゾ
フェノン2重量部、光増感剤であるミヒラーケトン0.
2重量部およびNMP1.5重量部をさらに別の容器に
とり、攪拌混合することにより混合組成物を調製した。
そして、1)、2)および3)で調製した混合組成物を混合す
ることにより無電解めっき用接着剤を得た。3) Imidazole curing agent (Shikoku Chemicals, 2
E4MZ-CN) 2 parts by weight, benzophenone 2 parts by weight as a photopolymerization initiator, Michler's ketone 0.
2 parts by weight and 1.5 parts by weight of NMP were placed in another container and mixed by stirring to prepare a mixed composition.
Then, an adhesive for electroless plating was obtained by mixing the mixed compositions prepared in 1), 2) and 3).
【0033】B.プリント配線板の製造方法 (1) 厚さ1mmのガラスエポキシ樹脂またはBT(ビス
マレイミドトリアジン)樹脂からなる基板1の両面に1
8μmの銅箔8がラミネートされている銅貼積層板を出
発材料とした(図1(a)参照)。まず、この銅貼積層
板をドリル削孔し、続いてめっきレジストを形成した
後、この基板に無電解銅めっき処理を施してスルーホー
ル9を形成し、さらに、銅箔を常法に従いパターン状に
エッチングすることにより、基板の両面に内層銅パター
ン(内層導体回路)4を形成した。B. Manufacturing method of printed wiring board (1) 1 mm thick glass epoxy resin or BT (bismaleimide triazine) resin
A copper-clad laminate on which an 8 μm copper foil 8 was laminated was used as a starting material (see FIG. 1A). First, the copper-clad laminate is drilled, and then a plating resist is formed. Then, the substrate is subjected to an electroless copper plating process to form through holes 9, and the copper foil is patterned in a conventional manner. Then, an inner layer copper pattern (inner layer conductor circuit) 4 was formed on both surfaces of the substrate.
【0034】内層導体回路4を形成した基板を水洗い
し、乾燥した後、NaOH(10g/l)、NaClO
2 (40g/l)、Na3 PO4 (6g/l)の水溶液
を酸化浴(黒化浴)とする酸化浴処理を行い、そのスル
ーホール9を含む内層導体回路4の全表面に粗化面4
a、9aを形成した(図1(b)参照)。The substrate on which the inner conductor circuit 4 is formed is washed with water and dried, and then NaOH (10 g / l), NaClO
2 (40 g / l) and an aqueous solution of Na 3 PO 4 (6 g / l) are subjected to an oxidation bath treatment as an oxidation bath (blackening bath), and the entire surface of the inner layer conductor circuit 4 including the through holes 9 is roughened. Face 4
a and 9a were formed (see FIG. 1B).
【0035】(2) エポキシ樹脂を主成分とする樹脂充填
剤10を、基板の両面に印刷機を用いて塗布することに
より、内層導体回路4間またはスルーホール9内に充填
し、加熱乾燥を行った。即ち、この工程により、樹脂充
填剤10が内層導体回路4の間あるいはスルーホール9
内に充填される(図1(c)参照)。(2) A resin filler 10 containing an epoxy resin as a main component is applied to both surfaces of the substrate by using a printing machine to fill the space between the inner-layer conductor circuits 4 or the inside of the through holes 9 and heat and dry. went. That is, by this step, the resin filler 10 is placed between the inner layer conductor circuits 4 or through holes 9.
(See FIG. 1C).
【0036】(3) 上記(2) の処理を終えた基板の片面
を、ベルト研磨紙(三共理化学社製)を用いたベルトサ
ンダー研磨により、内層導体回路4の表面やスルーホー
ル9のランド表面に樹脂充填剤10が残らないように研
磨し、ついで、上記ベルトサンダー研磨による傷を取り
除くためのバフ研磨を行った。このような一連の研磨を
基板の他方の面についても同様に行った。そして、充填
した樹脂充填剤10を加熱硬化させた(図1(d)参
照)。(3) One surface of the substrate after the treatment of the above (2) is subjected to belt sanding using a belt polishing paper (manufactured by Sankyo Rikagaku Co., Ltd.) to form a surface of the inner conductor circuit 4 and a land surface of the through hole 9. Was polished so that the resin filler 10 did not remain, and then buffed to remove the scratches caused by the belt sander polishing. Such a series of polishing was similarly performed on the other surface of the substrate. Then, the filled resin filler 10 was cured by heating (see FIG. 1D).
【0037】このようにして、スルーホール9等に充填
された樹脂充填剤10の表層部および内層導体回路4上
面の粗化層4aを除去して基板両面を平滑化し、樹脂充
填剤10と内層導体回路4の側面とが粗化面4aを介し
て強固に密着し、またスルーホール9の内壁面と樹脂充
填剤10とが粗化面9aを介して強固に密着した配線基
板を得た。In this manner, the surface layer portion of the resin filler 10 filled in the through holes 9 and the like and the roughened layer 4a on the upper surface of the inner conductor circuit 4 are removed to smooth both surfaces of the substrate, and the resin filler 10 and the inner layer are removed. A wiring board was obtained in which the side surfaces of the conductive circuit 4 were firmly adhered through the roughened surface 4a, and the inner wall surface of the through hole 9 was tightly adhered to the resin filler 10 through the roughened surface 9a.
【0038】(4) さらに、露出した内層導体回路4およ
びスルーホール9のランド上面に厚さ2μmのCu−N
i−Pからなる多孔質な合金の粗化層11を形成し、さ
らにこの粗化層11の表面に厚さ0.3μmのSn層を
設けた(図2(a)参照)。但し、Sn層については図
示しない。(4) Further, a 2 μm-thick Cu—N
A roughened layer 11 of a porous alloy made of iP was formed, and a Sn layer having a thickness of 0.3 μm was provided on the surface of the roughened layer 11 (see FIG. 2A). However, the Sn layer is not shown.
【0039】その粗化層11の形成方法は以下のようで
ある。即ち、基板をアルカリ脱脂してソフトエッチング
し、次いで、塩化パラジウムと有機酸とからなる触媒溶
液で処理して、Pd触媒を付与し、この触媒を活性化し
た。次に、硫酸銅(3.2×10-2mol/l)、硫酸
ニッケル(2.4×10-3mol/l)、クエン酸
(5.2×10-2mol/l)、次亜リン酸ナトリウム
(2.7×10-1 mol/l)、ホウ酸(5.0×1
0-1 mol/l)、界面活性剤(日信化学工業社製、
サーフィノール465)(1.0g/l)の水溶液から
なるpH=9で液温が70℃の無電解銅めっき浴に、液
攪拌を兼ねて窒素ガスをバブリングさせ、めっき液中の
溶存酸素濃度を2.1ppmに低下させた。バブリング
を終了してから1分後、触媒を活性化させた基板をバブ
リング処理を施しためっき液浸漬し、続いて、基板を浸
漬した30秒後に、空気のバブリングを開始し、めっき
液中の溶存酸素濃度を1.9〜2.1ppmに調整し
た。溶存酸素濃度の測定は、Orbisphere L
aboratories Japan社製の酸素計 3
600により行った。上記めっき処理により、内層導体
回路4およびスル−ホ−ル9のランドの表面のニッケル
層上に、厚さ5μmのCu−Ni−Pからなる針状合金
の粗化層11を設けた。The method of forming the roughened layer 11 is as follows. That is, the substrate was alkali-degreased and soft-etched, and then treated with a catalyst solution comprising palladium chloride and an organic acid to provide a Pd catalyst and activate the catalyst. Next, copper sulfate (3.2 × 10 −2 mol / l), nickel sulfate (2.4 × 10 −3 mol / l), citric acid (5.2 × 10 −2 mol / l), Sodium phosphate (2.7 × 10 −1 mol / l), boric acid (5.0 × 1
0 -1 mol / l), a surfactant (manufactured by Nissin Chemical Industry Co., Ltd.)
Nitrogen gas was bubbled into an electroless copper plating bath having an aqueous solution of Surfynol 465) (1.0 g / l) at a pH of 9 and a liquid temperature of 70 ° C., and the dissolved oxygen concentration in the plating solution was also measured. Was reduced to 2.1 ppm. One minute after the bubbling was completed, the substrate in which the catalyst was activated was immersed in a plating solution subjected to bubbling treatment. Subsequently, 30 seconds after the immersion of the substrate, bubbling of air was started. The dissolved oxygen concentration was adjusted to 1.9 to 2.1 ppm. The dissolved oxygen concentration is measured by Orbisphere L
Oxygen meter 3 manufactured by laboratories Japan
600. By the plating treatment, a roughened layer 11 of a needle-shaped alloy made of Cu-Ni-P having a thickness of 5 µm was provided on the nickel layer on the surface of the land of the inner layer conductor circuit 4 and the through hole 9.
【0040】(5) 基板の両面に、上記Aにおいて記載し
た組成の無電解めっき用接着剤をロールコータを用いて
2回塗布し、水平状態で20分間放置してから、60℃
で30分の乾燥を行った(図2(b)参照)。(5) An adhesive for electroless plating having the composition described in A above was applied twice on both sides of the substrate using a roll coater, and left in a horizontal state for 20 minutes.
For 30 minutes (see FIG. 2B).
【0041】(6) 上記(5) で無電解めっき用接着剤の層
を形成した基板の両面に、直径85μmの黒円が印刷さ
れたフォトマスクフィルムを密着させ、超高圧水銀灯に
より500mJ/cm2 強度で露光した。これをジエチ
レングリコールジメチルエーテル(DMDG)溶液でス
プレー現像することにより、その接着剤の層に直径85
μmのバイアホール形成用開孔6を形成した。さらに、
当該基板を超高圧水銀灯により3000mJ/cm2 で
露光し、100℃で1時間、その後150℃で5時間の
加熱処理を行うことにより、フォトマスクフィルムに相
当する寸法精度に優れた開孔(バイアホール形成用開孔
6)を有する厚さ18μmの層間樹脂絶縁層2(2a、
2b)を形成した(図2(c)参照)。(6) A photomask film on which a black circle having a diameter of 85 μm is printed is brought into close contact with both surfaces of the substrate on which the adhesive layer for electroless plating is formed in the above (5), and is 500 mJ / cm by an ultrahigh pressure mercury lamp. Exposure was at two intensities. This is spray-developed with a diethylene glycol dimethyl ether (DMDG) solution, so that the adhesive layer has a diameter of 85 mm.
An opening 6 for forming a via hole of μm was formed. further,
The substrate is exposed to ultra-high pressure mercury lamp at 3000 mJ / cm 2 , and is subjected to a heat treatment at 100 ° C. for 1 hour and then at 150 ° C. for 5 hours, so that a hole having excellent dimensional accuracy equivalent to a photomask film (via). 18 μm thick interlayer resin insulation layer 2 (2a, 2a,
2b) was formed (see FIG. 2 (c)).
【0042】(7) バイアホール形成用開孔6を形成した
基板を、クロム酸水溶液(700g/l)に73℃で2
0分間浸漬し、層間樹脂絶縁層2の表面に存在するエポ
キシ樹脂粒子を溶解除去してその表面を粗化し、粗化面
を得た。その後、中和溶液(シプレイ社製)に浸漬して
から水洗いした(図2(d)参照)。さらに、粗面化処
理した該基板の表面に、パラジウム触媒(アトテック社
製)を付与することにより、層間絶縁材層2の表面およ
びバイアホール用開孔6の内壁面に触媒核を付着させ
た。(7) The substrate having the opening 6 for forming a via hole was placed in an aqueous solution of chromic acid (700 g / l) at 73 ° C. for 2 hours.
The substrate was immersed for 0 minutes to dissolve and remove the epoxy resin particles present on the surface of the interlayer resin insulating layer 2 to roughen the surface to obtain a roughened surface. Then, it was immersed in a neutralizing solution (manufactured by Shipley) and washed with water (see FIG. 2D). Further, by applying a palladium catalyst (manufactured by Atotech) to the surface of the substrate subjected to the surface roughening treatment, catalyst nuclei were attached to the surface of the interlayer insulating material layer 2 and the inner wall surface of the via hole 6. .
【0043】(8) 次に、以下の組成の無電解銅めっき水
溶液中に基板を浸漬して、粗面全体に厚さ0.8μmの
無電解銅めっき膜12を形成した(図3(a)参照)。 〔無電解めっき水溶液〕 EDTA 60 g/l 硫酸銅 10 g/l HCHO 6 ml/l NaOH 10 g/l α、α’−ビピリジル 80 mg/l ポリエチレングリコール(PEG) 0.1 g/l 〔無電解めっき条件〕 60℃の液温度で20分(8) Next, the substrate was immersed in an electroless copper plating aqueous solution having the following composition to form an electroless copper plating film 12 having a thickness of 0.8 μm on the entire rough surface (FIG. 3 (a)). )reference). [Electroless plating aqueous solution] EDTA 60 g / l Copper sulfate 10 g / l HCHO 6 ml / l NaOH 10 g / l α, α'-bipyridyl 80 mg / l Polyethylene glycol (PEG) 0.1 g / l [None Electroplating conditions] 20 minutes at a liquid temperature of 60 ° C
【0044】(9) 市販の感光性ドライフィルムを無電解
銅めっき膜12に貼り付け、マスクを載置して、100
mJ/cm2 で露光し、0.8%炭酸ナトリウム水溶液
で現像処理することにより、めっきレジスト3を設けた
(図3(b)参照)。(9) A commercially available photosensitive dry film is affixed to the electroless copper plating film 12, a mask is placed thereon, and
Exposure at mJ / cm 2 and development with a 0.8% aqueous sodium carbonate solution provided a plating resist 3 (see FIG. 3B).
【0045】(10)ついで、以下の条件で電解銅めっきを
施し、厚さ13μmの電気銅めっき膜13を形成した
(図3(c)参照)。 〔電解めっき水溶液〕 硫酸 180 g/l 硫酸銅 80 g/l 〔電解めっき条件〕 電流密度 1 A/dm2 時間 30 分 温度 室温(10) Next, electrolytic copper plating was performed under the following conditions to form a 13 μm-thick electrolytic copper plating film 13 (see FIG. 3C). [Electroplating aqueous solution] sulfuric acid 180 g / l copper sulfate 80 g / l [Electroplating conditions] Current density 1 A / dm 2 hours 30 minutes Temperature Room temperature
【0046】(11)めっきレジスト3を5%KOH水溶液
で剥離除去した後、そのめっきレジスト3下の無電解め
っき膜12を硫酸と過酸化水素の混合液でエッチング処
理して溶解除去し、無電解銅めっき膜12と電解銅めっ
き膜13からなるL/S=28/28で厚さ11μmの
外層導体回路5(バイアホール7を含む)を形成した。(11) After the plating resist 3 is peeled and removed with a 5% KOH aqueous solution, the electroless plating film 12 under the plating resist 3 is dissolved and removed by etching with a mixed solution of sulfuric acid and hydrogen peroxide. An outer conductor circuit 5 (including the via hole 7) having an L / S = 28/28 and a thickness of 11 μm including the electrolytic copper plating film 12 and the electrolytic copper plating film 13 was formed.
【0047】(12)外層導体回路5を形成した基板に対
し、上記(4) と同様の処理を行い、外層導体回路5の表
面に厚さ2μmのCu−Ni−Pからなる合金の粗化層
11を形成した(図3(d)参照)。(12) The same processing as in (4) above is performed on the substrate on which the outer conductor circuit 5 is formed, and the surface of the outer conductor circuit 5 is roughened to a 2 μm thick Cu—Ni—P alloy. The layer 11 was formed (see FIG. 3D).
【0048】(13)上記 (5)〜(12)の工程を繰り返すこと
により、さらに上層の外層導体回路5および粗化層11
を形成し、最後に開孔を有するソルダーレジスト層14
の形成、ニッケルめっき膜15および金めっき膜16の
形成を行った後、はんだバンプ17を形成し、はんだバ
ンプ17を有する多層プリント配線板を得た(図4
(a)〜図5(c)参照)。(13) By repeating the above steps (5) to (12), the outer conductor circuit 5 and the roughened layer 11
And finally a solder resist layer 14 having an opening
After forming the nickel plating film 15 and the gold plating film 16, solder bumps 17 were formed to obtain a multilayer printed wiring board having the solder bumps 17 (FIG. 4).
(A) to FIG. 5 (c)).
【0049】(比較例1)上記実施例1における(4) の
Cu−Ni−Pからなる合金の粗化層を設ける工程にお
いて、以下のような条件でめっきを行ったほかは、実施
例1と同様にして多層プリント配線板を得た。すなわ
ち、基板をめっき液に浸漬する前に、めっき液に空気の
バブリングを行った。このとき、めっき液の溶存酸素濃
度は、3.4ppmであった。空気バブリングを止めた
後、基板をめっき液に浸漬してめっき処理を行った。こ
のとき、めっき時間とともに、めっき液中の溶存酸素濃
度は、3.4ppmから0.6ppmへ低下した。な
お、(4) の工程におけるその他の条件は、(4) に記載し
た条件と同様である。Comparative Example 1 In the step of providing a roughened layer of an alloy composed of Cu—Ni—P of (4) in the above-mentioned Example 1, plating was performed under the following conditions. In the same manner as in the above, a multilayer printed wiring board was obtained. That is, air was bubbled through the plating solution before the substrate was immersed in the plating solution. At this time, the dissolved oxygen concentration of the plating solution was 3.4 ppm. After stopping air bubbling, the substrate was immersed in a plating solution to perform plating. At this time, the dissolved oxygen concentration in the plating solution decreased from 3.4 ppm to 0.6 ppm with the plating time. The other conditions in the step (4) are the same as the conditions described in the step (4).
【0050】上記実施例1および比較例1で得られた1
00枚の多層プリント配線板について、断面を光学顕微
鏡で観察して、Cu−Ni−P合金からなる粗化層の未
析出および異常析出を検査した。その結果、実施例1で
は、未析出および異常析出は観察されなかったが、比較
例1では、37%の多層プリント配線板に未析出が観察
され、55%の多層プリント配線板に、異常析出が観察
された。The 1 obtained in the above Example 1 and Comparative Example 1
The cross section of the 00 multilayer printed wiring boards was observed with an optical microscope, and the undeposited and abnormal deposits of the roughened layer made of the Cu-Ni-P alloy were inspected. As a result, in Example 1, non-precipitation and abnormal precipitation were not observed, but in Comparative Example 1, non-precipitation was observed in 37% of the multilayer printed wiring boards, and abnormal deposition was observed in 55% of the multilayer printed wiring boards. Was observed.
【0051】[0051]
【発明の効果】以上説明のように本発明の構成からなる
多層プリント配線板によれば、導体回路にCu−Ni−
Pからなる針状合金のめっき処理を施す際、めっきの未
析出や異常析出を防止することができる。As described above, according to the multilayer printed wiring board having the structure of the present invention, the conductor circuit has Cu-Ni-
When plating a needle-shaped alloy made of P, non-precipitation and abnormal precipitation of plating can be prevented.
【図1】(a)〜(d)は、本発明の多層プリント配線
板の製造工程の一部を示す断面図である。FIGS. 1A to 1D are cross-sectional views showing a part of a manufacturing process of a multilayer printed wiring board according to the present invention.
【図2】(a)〜(d)は、本発明の多層プリント配線
板の製造工程の一部を示す断面図である。FIGS. 2A to 2D are cross-sectional views showing a part of a manufacturing process of the multilayer printed wiring board of the present invention.
【図3】(a)〜(d)は、本発明の多層プリント配線
板の製造工程の一部を示す断面図である。FIGS. 3A to 3D are cross-sectional views illustrating a part of the manufacturing process of the multilayer printed wiring board according to the present invention.
【図4】(a)〜(d)は、本発明の多層プリント配線
板の製造工程の一部を示す断面図である。FIGS. 4A to 4D are cross-sectional views illustrating a part of the manufacturing process of the multilayer printed wiring board according to the present invention.
【図5】(a)〜(c)は、本発明の多層プリント配線
板の製造工程の一部を示す断面図である。FIGS. 5A to 5C are cross-sectional views showing a part of the manufacturing process of the multilayer printed wiring board of the present invention.
1 基板 2 層間樹脂絶縁層(無電解めっき用接着剤層) 3 めっきレジスト 4 内層導体回路(内層銅パターン) 4a 粗化面 5 外層導体回路 6 バイアホール形成用開孔 7 バイアホール 8 銅箔 9 スルーホール 9a 粗化面 10 樹脂充填剤 11 粗化層 12 無電解めっき膜 13 電解めっき膜 14 ソルダーレジスト層 15 ニッケルめっき膜 16 金めっき膜 17 はんだバンプ DESCRIPTION OF SYMBOLS 1 Substrate 2 Interlayer resin insulation layer (adhesive layer for electroless plating) 3 Plating resist 4 Inner layer conductor circuit (Inner layer copper pattern) 4a Roughened surface 5 Outer layer conductor circuit 6 Via hole forming opening 7 Via hole 8 Copper foil 9 Through hole 9a Roughened surface 10 Resin filler 11 Roughened layer 12 Electroless plated film 13 Electroplated film 14 Solder resist layer 15 Nickel plated film 16 Gold plated film 17 Solder bump
Claims (1)
脂絶縁層と新たな導体回路とを順次積層形成し、多層化
する多層プリント配線板の製造方法であって、前記導体
回路が形成された基板を、銅イオン、ニッケルイオン、
錯化剤、次亜リン酸イオンおよび界面活性剤を含む水溶
液に浸漬し、その溶存酸素濃度を1.5〜2.5ppm
に調整して前記導体回路上にCu−Ni−Pからなる粗
化層を形成することを特徴とする多層プリント配線板の
製造方法。1. A method of manufacturing a multilayer printed wiring board in which an interlayer resin insulating layer and a new conductive circuit are sequentially formed on a substrate on which the conductive circuit is provided, thereby forming a multilayer structure. Copper substrate, nickel ion,
Immerse in an aqueous solution containing a complexing agent, hypophosphite ions and a surfactant, and adjust the dissolved oxygen concentration to 1.5 to 2.5 ppm.
And forming a roughened layer made of Cu-Ni-P on the conductive circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28804398A JP3626022B2 (en) | 1998-10-09 | 1998-10-09 | Manufacturing method of multilayer printed wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28804398A JP3626022B2 (en) | 1998-10-09 | 1998-10-09 | Manufacturing method of multilayer printed wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000114719A true JP2000114719A (en) | 2000-04-21 |
| JP3626022B2 JP3626022B2 (en) | 2005-03-02 |
Family
ID=17725104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28804398A Expired - Fee Related JP3626022B2 (en) | 1998-10-09 | 1998-10-09 | Manufacturing method of multilayer printed wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3626022B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007243181A (en) * | 2006-03-06 | 2007-09-20 | Samsung Electro-Mechanics Co Ltd | Method of manufacturing substrate by imprinting |
-
1998
- 1998-10-09 JP JP28804398A patent/JP3626022B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007243181A (en) * | 2006-03-06 | 2007-09-20 | Samsung Electro-Mechanics Co Ltd | Method of manufacturing substrate by imprinting |
| US8187518B2 (en) | 2006-03-06 | 2012-05-29 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing substrate by imprinting |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3626022B2 (en) | 2005-03-02 |
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