JP2000162414A - Method for manufacturing a reflecting mirror, reflection type illumination device, or semiconductor exposure device - Google Patents

Abstract

A first object of the present invention is to provide a manufacturing method capable of manufacturing a multi-light source forming reflecting mirror having a reflecting surface shape as designed at a high yield, and furthermore, to achieve a higher throughput. A second object is to obtain a high semiconductor exposure apparatus. According to the present invention, there is provided a method of manufacturing a reflecting mirror in which a plurality of element reflecting surfaces each having a part of a predetermined curved surface as a plane shape are formed and arranged at predetermined positions, wherein a plurality of substrates are prepared. ,
Element reflecting surfaces are processed one by one on each substrate to form an element reflecting surface row 2
5, 26, 27 are formed, and the element reflection surface rows 25, 26, 2
The method has a step of joining the substrates on which the substrates 7 are formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a reflecting mirror and a semiconductor manufacturing apparatus, and more particularly, to a reflecting mirror constituted by arranging a plurality of minute element reflecting surfaces at predetermined positions. The present invention relates to a method of manufacturing a semiconductor device, a reflection type illumination device, and a semiconductor exposure apparatus using the illumination device.

[0002]

2. Description of the Related Art At present, in the manufacture of semiconductor devices such as DRAMs and MCPs, development research for narrowing the minimum line width has been actively carried out, and the design rule is 0.13 μm.
m (equivalent to 4G DRAM), 0.1 μm (16G DR
Various technologies have been developed for realizing 0.07 mμ (corresponding to 32 G DRAM).

[0003] What is inseparably related to the problem of the minimum line width is a light diffraction phenomenon that occurs during exposure.
This is the biggest problem when realizing the minimum line width that requires the blur of the image and the focal point due to this. In order to suppress the effect of this diffraction phenomenon, the numerical aperture of the exposure optical system (NA: Numerical
It is necessary to increase the aperture), and the development of an optical system with a large aperture and a short wavelength is the point of development.

However, when the wavelength of light is shortened, in particular,
When the thickness is less than 00 nm, an optical material which is easy to process and has little light absorption is not found. Therefore, a projection optical system using a reflection optical system has been developed by abandoning the transmission optical system, and has achieved considerable results. Among them, by combining a plurality of reflecting mirrors, an arc-shaped optical visual field (a region that can be used as an exposure region) for soft X-rays is realized,
There is a method in which the entire chip is exposed by moving the mask and the wafer synchronously with each other at a relative speed of the projection reduction ratio (for example, Koichiro Hoh and Hiroshi
Tanino; “Feasibility Study on the Extreme UV / Soft
X-ray Projection-type Lithography ”, Bulletin of th
e Electrontechnical Laboratory Vol. 49, No. 12, P. 9
83-990, 1985. This document is hereinafter referred to as Reference Document 1.)

[0005] By the way, the so-called throughput is an important factor for the above-mentioned semiconductor device manufacturing along with the minimum line width. Factors involved in this throughput include the light emission intensity of the light source, the efficiency of the illumination system, the reflectance of the reflector used in the reflection system, and the sensitivity of the photosensitive material / resist on the wafer. At present, the light source is ArF laser, F ₂
Synchrotron radiation light and laser plasma light are used as a light source of a laser and a short wavelength light. Also, with respect to a reflector for reflecting such light, development of a multilayer reflector has been carried out at a rapid pace so as to obtain a high reflectance (for details, refer to the above-mentioned reference 1 and Andrew M. Hawryluk). et al
; “Soft x-ray beamsplitters and highly dispersive
multilayer mirrors for use as soft x-ray laser ca
vity component ”, SPIE Vol. 688 Multilayer Struct
ure and Laboratory X-ray Laser Research (1986) P.8
1-90 and JP-A-63-31640).

Now, regarding a semiconductor exposure apparatus,
In this semiconductor exposure apparatus, an illumination optical system for uniformly illuminating the original regardless of the light amount distribution of the light source has been developed in order to uniformly illuminate the original without unevenness. What is required for this illumination optical system is uniform illumination and aperture.
For example, Japanese Patent Application Laid-Open No. 60-232552 proposes a technique for a rectangular illumination area. However, the semiconductor exposure apparatus includes a projection optical system that forms a pattern of an original on a wafer, and when the field of view of the projection optical system is arc-shaped, light utilization efficiency is poor in a rectangular illumination field, Inevitably, the exposure time could not be reduced, and the throughput did not increase.

Recently, as a method of solving this problem, a method of setting an illumination field according to an optical field of a projection optical system and condensing light from a light source into the illumination field is disclosed in, for example, 70058 “X-ray reduction projection exposure apparatus and semiconductor device manufacturing apparatus using the same” has been proposed. In this case, a cylindrical convex semi-cylindrical reflective integrator shown in FIG. 12 is used as an illumination optical system. The reflective convex semi-cylindrical integrator is a total reflection mirror having a reflective surface having a shape in which a large number of minute convex semi-cylindrical surfaces are arranged one-dimensionally. Further, instead of the reflective convex semi-cylindrical integrator, a reflective concave semi-cylindrical integrator as shown in FIG. 13 can be used.

[0008]

By the way, the above-mentioned reflecting mirror is usually manufactured by cutting a single substrate as a workpiece using a cutting machine equipped with a ball end mill. The ball end mill has a shape as shown in FIG. 14 (a). By controlling the position of the ball end mill three-dimensionally with respect to the workpiece, it is possible to process various surfaces as shown in FIG. 14 (b). is there.

However, when the reflecting surface shape shown in FIG. 12 is formed from one aluminum substrate and actually illuminated using the completed multi-light source forming reflecting mirror, an integrator having an expected good reflection efficiency is obtained. Is not formed, and in a semiconductor exposure apparatus using such an integrator,
High throughput was not obtained. Therefore, when the cause was investigated, as shown in FIG. 15, the convex shape and the convex shape were adjacent to each other, and all the valley portions were left unprocessed. Turned out to be something. Thus, if there is a portion that does not have the shape of the reflection surface at the boundary portion between all the reflection surfaces and the reflection surface,
Even if the portion of the processing defect formed between one reflection surface and the reflection surface is small, adding all these areas is equivalent to the occurrence of the processing defect over a large area.

Further, when an attempt is made to manufacture a reflection-type integrator as shown in FIGS. 12 and 13 using an existing processing apparatus, the length of one reflection surface of the reflection-type integrator is long, so that the stage of the apparatus is moved. In many cases, processing was not possible due to insufficient amount. Further, even if the processing can be performed, there is a problem that high shape accuracy cannot be obtained due to the movement accuracy of the device due to its long size.

Therefore, the present invention has been devised in order to solve such a problem, and a first object of the present invention is to provide a manufacturing method capable of manufacturing a multi-light source forming reflecting mirror having a reflecting surface shape as designed with a high yield. A second object is to obtain a semiconductor exposure apparatus with higher throughput.

[0012]

According to a first aspect of the present invention, a plurality of element reflecting surfaces having a part of a predetermined curved surface are formed and arranged at predetermined positions. A method of manufacturing a reflecting mirror, comprising preparing a plurality of substrates,
An element reflection surface row is formed on each substrate by processing the element reflection surfaces one by one, and a step of joining the substrates on which the element reflection surface rows are formed to each other is provided.

As described above, a single row of reflecting surfaces is formed on one substrate, and then the substrates on which the array of element reflecting surfaces are formed are connected to each other. The number of defective parts can be reduced, and a polyhedral mirror with high reflection efficiency can be formed. Further, in the first embodiment of the present invention, the substrates formed with the element reflection surface rows are bonded to each other in a direction different from the direction formed by the element reflection surface rows.

Further, according to a second aspect of the present invention, there is provided a reflection-type lighting device in which a plurality of element reflecting surfaces each having a part of a predetermined curved surface are formed and arranged at predetermined positions. It was formed by joining a plurality of substrates each having a reflective surface formed in a line. Since the illumination device having such a configuration, the vicinity of the boundary between the element reflection surfaces can be formed into a surface shape as designed, so that a bright reflection illumination device having a sufficiently large effective reflection surface area can be obtained.

In a third embodiment of the present invention, a light source, a mask stage that moves while holding a mask, an illumination optical system that illuminates the mask, a projection optical system that projects a pattern on the mask onto a wafer, A semiconductor exposure apparatus having a wafer stage to be held and moved, comprising a reflection type illumination apparatus according to claim 3 in a part of an illumination optical system, wherein an element reflection surface has a shape similar to an optical field of a projection optical system. I decided to be.

As described above, since the reflection type illumination device having a sufficiently wide and effective reflection surface is used as the exposure device, the exposure time can be reduced, and an improvement in throughput can be expected. Further, in the semiconductor exposure apparatus according to the third embodiment of the present invention, each reflection surface of the reflection type illumination device has an arc shape. Next, the present invention will be described in detail in an embodiment of the present invention, but the present invention is not limited to this.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, as a first embodiment of the present invention, a description will be given of a polyhedral reflecting mirror which is a reflection type integrator used in the projection exposure apparatus shown in FIG. This polygon mirror sets the illumination field in accordance with the optical field of the projection optical system, thereby increasing the illumination efficiency and solving the problem of the throughput. No. 10-47400. This technique will be briefly described with reference to FIG.

FIG. 2 is a schematic diagram of a projection exposure apparatus according to an embodiment of the present invention. In this projection exposure apparatus, a light source 1, a polygon mirror 2, a condenser optical element 3, a reflector 4, a mask 5, a mask stage 5s, a projection optical system 6, a wafer 7, a wafer stage 7s , A mask stage controller 8 and a wafer stage controller 9.

Light emitted from the light source 1 is incident on a polygon mirror 2 formed by using the manufacturing method of the present invention. The light reflected by the polygon mirror 2 illuminates the mask 5 held on the mask stage 5s via the condenser optical element 3 and the reflector 4. In this specification, the polygon mirror 2
The condenser optical element 3 and the reflecting mirror 4 are collectively referred to as a reflective illumination optical system.

On the mask 5, a pattern similar in shape to the pattern to be drawn on the wafer 7 held on the wafer stage 7s is formed. The pattern on the mask 5 is illuminated by a reflective illumination optical system, and is projected onto a wafer 7 through a projection optical system 6 including aspherical reflecting mirrors 6a, 6b, 6c, and 6d. Thus, the pattern formed on the mask 5 is projected onto the wafer 7.

The optical field of view of the projection optical system 6 is arc-shaped, is not wide enough to cover the entire device chip to be manufactured, and is relatively moved (scanned) while synchronizing the mask 5 and the wafer 7. By performing exposure, a pattern of the entire chip is formed on the wafer. For this purpose, a mask stage controller 8 including a laser interferometer for controlling the movement amount of the mask stage 5s and a wafer stage controller 9 for controlling the movement amount of the wafer stage 7s are provided. (Refer to the above-mentioned reference 1 for the exposure method involving this scan.)

The polygon mirror 2 is used to optically form a plurality of secondary light sources from the light from the light source 1.
The multi-surface reflecting mirror 2 has a plurality of minute element reflecting surfaces having the same contour of each reflecting surface, there are a plurality of types of element reflecting surfaces, and the element reflecting surfaces are repeatedly arranged for each surface shape. ing. The outer shape of the element reflecting surface is similar to the optical field of view of the projection optical system. As a result, a number of point light source images I are formed at the position P2, which form the required illumination field by the condenser optical element 3. By using the above-described technique, a region to be illuminated on a mask can be uniformly illuminated without waste, the exposure time can be reduced, and a semiconductor exposure apparatus having high throughput can be realized.

The polygon mirror 2 used in the reflective illumination optical system having the arc-shaped illumination field as described above, and the result of actually designing one element reflection surface formed on the polygon mirror 2 will be described. This will be described with reference to FIGS. As shown in FIG. 3, the polygon mirror 2 has three types of element reflecting surfaces (A1, B
1, C1). In addition, they are provided in a row with one side of each element reflection surface being combined.
Then, such a row is formed for a predetermined number of rows to form the polyhedral reflecting mirror 2. By the way, each row of the polygon mirror 2 has an element reflection surface of A1, B1, C1, A1, B1, C1.
Are arranged in the order of... Then, the surface shape of each element reflection surface is a concave surface having a constant curvature as shown in FIGS.
It has the shape when the shape shown in (c) is projected.

The concave surface 41 shown in FIG. 4 is a spherical surface having the same focal length as the distance P2 shown in FIG. As shown in FIG. 4, YZ is formed on the spherical surface formed on the concave surface 41.
Arc-shaped band parallel to the plane (arc-shaped band of a circle with an average radius of Zh)
Each element reflection surface has the same shape as the shape on which the is projected. The shape of the element reflection surface A1 is the same as the shape of the projection image when the center of the projected arc is aligned with the central axis of the spherical surface of the concave surface 41. The shape of the element reflection surfaces B1 and C1 is the same as the shape of the projected image when the center of the arc to be projected is shifted by Yh in the direction perpendicular to the center axis of the spherical surface of the concave surface 41. All of these shapes are substantially arc-shaped. When viewed from the direction perpendicular to the paper, the shape is a perfect arc.

When a parallel ray is incident on the element reflecting surface thus formed, for example, from the X direction, a point image by the element reflecting surface A1 is formed at the same position as the focal position of the spherical surface of the concave surface 41, and the element reflecting surface B1 Is formed to be shifted laterally by Yh from the focal position. Further, the point image by the element reflection surface C1 is also formed to be laterally shifted by −Yh from the focal position of the spherical surface of the substrate 41.

As a preferable practical design solution of the element reflecting surface, the radius of curvature R of the element reflecting surface is 160 to 2000.
4, the distance of Zh shown in FIG. 4 is 4.5 to 55 mm, the width of the arc (the width of the arc-shaped band) is 0.3 to 20 mm, and the length of the arc is 4.5 to 55 mm. c) is about 2.3 to 27 mm, and the surface roughness is rms <0.
3 nm.

By the way, the polygon mirror 2 shown in FIG.
When it is manufactured by cutting a single substrate using a cutting machine equipped with a ball end mill as in the prior art, a shape as shown in FIG. 5 is obtained. As described above, it has been found that the unprocessed CR exists in a portion where the element reflection surfaces 51 are adjacent to each other, and that the light applied to this portion does not reflect to a predetermined position. When there is light that is not reflected at a predetermined position, the amount of light illuminated on the mask 5 decreases, and the exposure time on the wafer 7 increases. As a result, the exposure apparatus has a low throughput.

In order to solve such a problem, in the method for manufacturing a polyhedral mirror according to the first embodiment of the present invention, as shown in FIG. Formed in a row. By setting the width of the substrate to be the same as the width of the element reflection surface, even if the end mill 31 comes to the boundary between the element reflection surfaces, the end mill 31 can be moved while being cut in the direction of the arrow 32 as it is.

In this way, the element reflecting surfaces A1, B1, C1
Is formed, and then the multi-sided reflecting mirror 2 is formed by arranging the substrates on which the element reflecting surfaces are formed in a line in a direction perpendicular to the direction in which the element reflecting surfaces are formed. And By forming element reflection surfaces on a plurality of substrates, even if the processing of one element reflection surface fails, only the element reflection surface row including the element reflection surface that has failed to be processed needs to be produced again. Efficiency can be increased. In addition, since the end mill 31 can be processed while passing through the corner of the formation area of the element reflection surface 51, an optical element having high shape accuracy can be processed without remaining processing at four corners.

Next, a method for manufacturing a polygon mirror according to an embodiment of the present invention will be described in detail. First, a metal block, for example, a block of oxygen-free copper is prepared. Here, the reason why oxygen-free copper was selected is that the mirror surface is excellent when cut and polished. This block is cut out to a predetermined size. The size is such that the element reflection surface can be formed in one row, and in consideration of joining a substrate on which another element reflection surface row is formed, the width of the substrate to be cut out is determined by the element width. It is the same as the chord length for the arc shape of the reflecting surface. In this embodiment, a block of oxygen-free copper is 30 mm long × 5 m wide.
The blank was cut into one blank having a size of mx 10 mm in height and two blanks having a length of 27 mm x a width of 5 mm x a height of 10 mm.

Next, among the cut blanks,
One blank is attached to a cutting machine equipped with a ball end mill, and three types of element reflecting surfaces A1 and B shown in FIG.
1. The shape of C1 is processed one by one. After the shape processing, the element reflecting surface array was mirror-finished by polishing.

In this way, an array of element reflection surfaces was formed on one substrate such that a plurality of element reflection surfaces were arranged in one direction. Then, the other blanks are similarly shaped and polished by a cutting machine to form an array of element reflection surfaces formed such that a plurality of element reflection surfaces are arranged in one direction on one substrate. A total of three element reflection surface rows are formed. The element reflection surface rows 25, 2 thus formed
6, 27 have the shape shown in FIG. Next, the element reflection surface rows 25, 26, and 27 are arranged in a direction perpendicular to the direction in which the element reflection surface rows are formed, and are adhered to each other as shown in FIG. In this way, the polygon mirror 2 is formed.

The polygon mirror 2 thus formed is
In order to further increase the reflectance, a reflective film is formed. For example, when the polygon mirror 2 is used in the above-described exposure apparatus, and an F ₂ laser is used as a light source of the exposure apparatus, an aluminum reflection film is formed on the polygon mirror 2 and aluminum is further formed thereon. From the viewpoint of preventing the oxidation of the film and maintaining the reflectance, magnesium fluoride (MgF2) is used for several tens n.
It is preferable to form a film having a thickness of m.

When light (electromagnetic waves) in the soft X-ray region is used, it is preferable to form an alternate multilayer film of molybdenum and silicon. In this manner, the polyhedral reflecting mirror 2 used in the exposure apparatus can be formed, and the boundary between the element reflecting surfaces is also formed in a desired shape. it can. Further, even if a defective portion occurs on one reflective surface at the time of forming or after forming the element reflective surface, it is only necessary to recreate and replace only the substrate having the defective portion, thereby reducing the cost. .

The present invention can be applied to a mirror other than the polygon mirror having the above-described shape. For example, the number of the element reflection surfaces may be more than three types of A1, B1, and C1, or at least the number of the element reflection surfaces may be sufficient. The element reflection surface may be a part of an aspheric surface. Further, the number of element reflection surface rows is not limited to three. Further, the present manufacturing method can be applied to other completely different reflecting mirrors.

Next, as a second embodiment of the present invention, FIG.
A method of manufacturing a polygon mirror having the shape shown in FIG.
In a polyhedral mirror having such a shape, if a large number of reflection surfaces are formed on one substrate, if any one defective portion occurs, the other good reflection surfaces have to be discarded. An element reflection surface array was formed, and the element reflection surface arrays were connected.

In this case, depending on the length of the reflecting mirror, FIG.
When the length in the depth direction is long, a blank shorter than the depth of one element reflection surface is used. And FIG.
Are formed and two-dimensionally arranged so that the respective reflecting surfaces are arranged in parallel, a polyhedral reflecting mirror having the shape shown in FIG. 12 can be formed.

When the length in the depth direction shown in FIG. 12 is short, a blank having the same length as the depth of one element reflection surface is used. By forming a plurality of element reflection surface rows 81 as shown in FIG. 8 and arranging them in a direction perpendicular to the longitudinal direction of the element reflection surfaces and in parallel with each element reflection surface, FIG. Can be formed.

In this way, the cost can be reduced, and the boundary between the element reflection surface row and the element reflection surface row is
Since it can be formed in a desired shape, the effective area can be relatively widened. If it is desired to further remove the processing residue between the element reflection surface rows, it is preferable to process the blank by the following method.

When formed only with a cutting machine using the end mill 31, the side surface shape of the element reflection surface row 90 shown in FIG. 9A is the same as that of FIG. CR2 is formed. Therefore, the non-rotational tool 91 removes a part of the unprocessed CR 2 from the element reflection surface row 90 formed by using the end mill 31. FIG. 9B shows the shape after the residual machining CR2 has been removed by the non-rotating tool 91 in this manner. In this way, an effective reflection surface shape can be formed even at the boundary between the element reflection surfaces forming the element reflection surface row.

As another method, the non-rotating tool 92 having a cross-sectional shape that is the same as the boundary portion of the element reflection surface may be used to cut only the boundary portion of the element reflection surface. For example, the non-rotating tool 92 shown in FIG. 10 may be used to remove the unprocessed portion from the shape formed in FIG. 9A. As described above, when the multi-sided reflecting mirror is formed by connecting the substrates on which the element reflecting surface rows are formed, the effective reflection area is still small, and if not enough, it is preferable to remove the unprocessed CR2 by a non-rotating tool. .

In the present invention, in addition to the above-described convex half-cylindrical polygon mirror, a plurality of element reflecting surface arrays 110 are formed as shown in FIG. The present invention can be applied to the production of a cylindrical polygon mirror. Also in this case, a plurality of substrates on which a plurality of element reflection surface rows are formed are formed,
By connecting them, the cost can be reduced. By the way, in the above-mentioned embodiment of the present invention, the polygonal reflecting mirror is formed by bonding the element reflecting surface rows, but the present invention is not limited to this, and the optical surface of the polygonal reflecting mirror is directed upward. If used, it is not necessary to fix it simply by arranging it on the pedestal. In addition, although the element reflection surface row is joined after polishing, the present invention is not limited to this, and the polishing may be performed after joining the shape-processed element reflection surface row. Further, the material of the workpiece is not limited to oxygen-free copper, and it is sufficient that the workpiece has good mirror finish after cutting and polishing.

For example, silicon, ULE, super Invar material, oxygen-free copper, Invar material, aluminum, carbon steel, quartz glass, Starbucks material, Pyrex glass and the like can be considered. Further, an amorphous thin film of a nickel alloy or an amorphous thin film containing a nickel alloy as a main component may be formed on a metal substrate.

[0044]

As described above, according to the present invention, an optical element having a complicated shape composed of a large number of element reflecting surfaces can be manufactured with high accuracy and high processing efficiency. Further, if the reflecting mirror obtained by the present manufacturing method is used as an illumination device for an exposure apparatus, an exposure apparatus with a high throughput can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a polyhedral mirror in which substrates on which element reflection surface arrays are formed are joined according to a first embodiment of the present invention.

FIG. 2 is a schematic configuration diagram of an optical system of an exposure apparatus using a polyhedral mirror formed by a processing procedure according to the first embodiment of the present invention.

FIG. 3 is a schematic configuration diagram of a polygon mirror formed by a processing procedure according to the first embodiment of the present invention;

FIG. 4 is a diagram showing a surface shape of an element reflecting surface constituting a polyhedral reflecting mirror;

FIG. 5 is a view showing a shape of a polygon mirror formed by a conventional processing method.

FIG. 6: Element reflection surfaces 1A, 1B, 1C from one substrate
FIG. 6 is a diagram showing a path of an end mill when forming a circle. .

FIG. 7 is a schematic structural view of a polygon mirror formed by a processing method according to a second embodiment of the present invention.

FIG. 8 is a schematic configuration diagram of a polygon mirror formed by a processing method according to a second embodiment of the present invention.

FIG. 9 is a view showing a method of removing a processing residue when formed by the processing method according to the second embodiment of the present invention.

FIG. 10 is a diagram showing a method of removing a processing residue when formed by a processing method according to the second embodiment of the present invention.

FIG. 11 is a diagram showing a method of manufacturing a reflective concave semi-cylindrical integrator. .

FIG. 12 is a schematic view of a reflective convex semi-cylindrical integrator.

FIG. 13 is a schematic view of a reflective concave semi-cylindrical integrator.

FIG. 14 is a diagram showing a shape of a ball end mill and a curved surface that can be processed.

FIG. 15 is a sectional view of a reflective convex integrator formed by a conventional processing method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Light source 2 ... Polyhedral mirror 3 ... Condenser optical element 4 ... Reflector 5 ... Mask, 5s ... Mask stage 6 ···· Projection optical system 7 ··· Wafer 7s ····
Wafer stage 8 Mask stage controller 9 Wafer stage controller 25, 26, 27, 71, 81, 90, 110
Element reflecting surface array 31 End mill 32 End mill trajectory 41 Concave spherical surface showing the reflecting surface shape of the element reflecting surface 51 Formed by a conventional processing method Element reflection surface 91, 92 ... Non-rotating tool A1, B1, C1 Element reflection surface CR CR2 ...

Claims (5)

[Claims] 1. A method of manufacturing a reflecting mirror, comprising forming a plurality of element reflecting surfaces each having a part of a predetermined curved surface as a surface shape, and arranging the reflecting surfaces at predetermined positions. Forming a plurality of element reflection surfaces by processing the element reflection surfaces line by line, and joining the substrates on which the element reflection surface lines are formed to each other. 2. The method according to claim 1, wherein the element reflection surfaces have a concave shape, and the substrates on which the element reflection surface rows are formed are bonded in different directions with respect to a direction formed by the element reflection surface rows. The method for manufacturing a polygon mirror according to claim 1. 3. A reflective illuminator in which a plurality of element reflecting surfaces each having a part of a predetermined curved surface as a surface shape are formed and arranged at predetermined positions, wherein the element reflecting surfaces are formed one by one. A reflection-type lighting device formed by bonding a plurality of substrates. 4. A light source, a mask stage that holds and moves a mask, an illumination optical system that illuminates the mask, a projection optical system that projects a pattern on the mask onto a wafer, and a wafer stage that holds and moves the wafer And a reflection type illumination device according to claim 3 in a part of said illumination optical system, wherein said element reflection surface has a shape similar to an optical field of said projection optical system. Semiconductor exposure apparatus. 5. The semiconductor exposure apparatus according to claim 4, wherein
A semiconductor exposure apparatus, wherein each reflection surface of the reflection type illumination device has an arc shape.