JP2000098230A - Reflection reduction imaging optical system, exposure apparatus provided with the optical system, and exposure method using the optical system - Google Patents

Abstract

[PROBLEMS] To provide a reflection reduction imaging optical system capable of obtaining sufficient imaging performance with a simple configuration. In a reflection reduction imaging optical system for reducing and forming an image of an object on a final image plane, the reflection reduction imaging optical system includes:
A first reflection imaging system (reduction magnification β1) for condensing a light beam from the object to form an intermediate image, and a second reflection imaging system for condensing a light beam from the intermediate image to form a final image plane When the reduction magnification of a combined imaging system composed of the first reflection imaging system and the second reflection imaging system is β, 0.8 <| β1 /
A reflection reduction imaging optical system characterized by satisfying β | <2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a reflection reduction imaging optical system, and more particularly to a reflection reduction imaging optical system for lithography for manufacturing semiconductor devices.
The present invention further provides an exposure apparatus having the optical system,
The present invention relates to an exposure method using a reflection reduction imaging optical system.

[0002]

2. Description of the Related Art With the increase in the integration density of semiconductor devices, the development of a technique using X-rays as light for exposing a wafer has been promoted. Japanese Patent Application Laid-Open No. 63-31315 discloses a technique in which X-rays from a mask are reflected in the order of a first concave mirror, a convex mirror, and a second concave mirror to reduce the size of a wafer for exposure. The publication also states that the mask and the first
Between the concave mirror of the or between the second concave mirror and the wafer,
Alternatively, a configuration is disclosed in which plane mirrors are arranged on both sides to avoid interference between the wafer and light beams during scanning.
Further, Japanese Patent Application Laid-Open No. 9-251097 discloses that a first concave mirror, a plane mirror, a convex mirror, and a second concave mirror are coaxially arranged in order from the object side, and each concave mirror and convex mirror are formed into an aspherical shape. A reflection-reduction imaging optical system for X-ray lithography is disclosed in which a convex mirror is arranged on a pupil plane and formed to be image-side telecentric.

[0003]

Problems to be Solved by the Invention
In the configuration disclosed in Japanese Patent No. 1315, the wafer may interfere with the light beam in the synchronous scan between the mask and the wafer, which may cause the light beam to be shaken. Further, in this configuration, the incident angle of X-rays on the plane mirror is about 45 °, and the X-ray reflecting mirror is generally formed by laminating multilayer films. Aberration occurs.

Further, in the configuration disclosed in Japanese Patent Application Laid-Open No. 9-251097, the NA on the wafer side is as small as 0.06 in order to avoid vignetting that occurs when a reflecting optical system is configured by a plurality of mirror systems. Could not get a good resolution. Therefore, the present invention uses a reflection reduction imaging optical system capable of obtaining sufficient imaging performance with a simple configuration, an exposure apparatus including the reflection reduction imaging optical system, and a reflection reduction imaging optical system. An object of the present invention is to provide an exposure method.

[0005]

In order to achieve the above object, a reflection reduction imaging optical system according to the first aspect of the present invention reduces and forms an image of an object on a final image plane. In the reflection reduction imaging optical system, the reflection reduction imaging optical system collects a light flux from the object to form an intermediate image, and collects a light flux from the intermediate image. A second reflection imaging system that forms a final image plane by light, wherein the reduction magnification of the first reflection imaging system is β1, the first reflection imaging system, and the second reflection imaging system When the reduction magnification of the combined imaging system constituted by is represented by β, 0.8 <| β1 / β | <2 is satisfied.

[0006]

Embodiments of the present invention will be described. The present invention relates to a prior application filed by the same applicant, Japanese Patent Application No.
The present invention relates to a projection optical system used in the exposure apparatus described in No. 47400, and a schematic configuration of the exposure apparatus will be described below with reference to FIG.

A light beam (parallel light beam) supplied from a light source means such as a laser light source enters a reflection element group 2 as a multiple light source forming optical system (optical integrator) almost perpendicularly. Here, the reflection element group 2 is configured such that many reflection elements (optical elements) E are two-dimensionally densely arranged along a predetermined first reference plane P1 perpendicular to the YZ plane. Specifically, as shown in FIG.
A large number of reflective elements E having a reflective curved surface whose contour (outer shape) is formed in an arc shape are provided. And this reflection element group 2
Has five rows of reflective elements arranged in a large number along the Z direction along the Y direction. The five rows of reflecting elements are configured to be substantially circular as a whole. The outline shape (arc shape) of the reflection element E is
This is similar to the shape of an arc-shaped illumination area IF formed on a reflective mask (reflective reticle) 5 as a surface to be described later. Each of the reflection elements E has a shape in which a part of a reflection curved surface having a predetermined curvature radius RE is cut out in a predetermined region eccentric from an optical axis AX (not shown) so that an outline (outer shape) becomes an arc shape. And the center C of the arc-shaped reflecting element E
E is located at a height hE from the optical axis AXE. Therefore, the decentered reflecting surface RSE of each reflecting element E is constituted by an eccentric spherical mirror having a predetermined radius of curvature RE. Note that the reflection surface RSE indicates an effective reflection area of the reflection element E that effectively reflects the light beam incident from the light source unit 1. Therefore, the laser beam (parallel light beam) L incident in a direction parallel to the optical axis AxE of the reflection element E is
Is condensed at a focal position FE on the optical axis AxE.

Returning to FIG. 1, the laser beam (parallel light beam) incident on the reflecting element group 2 almost perpendicularly is split into a wavefront in an arc shape by the reflection action of many reflecting elements E and deviated from the incident light beam. Light source images corresponding to the number of the large number of reflective elements E are formed at the position P2. In other words, assuming that laser light is incident from a direction parallel to each optical axis AxE of a number of reflection elements E constituting the reflection element group 2, each light is reflected and condensed by each reflection element E. Light source images I are respectively formed on a plane P2 passing through the focal position FE existing on the axis AxE. On the surface P2 on which a large number of light source images I are formed, a large number of secondary light sources are substantially formed. Accordingly, the reflection element group 2 has a function as a light source image forming optical system that forms a large number of light source images I, that is, a multiple light source forming optical system that forms a large number of secondary light sources.

The light beams from the multiple light source images I enter a condenser reflecting mirror 3 having an optical axis AxC as a condenser optical system. The condenser reflecting mirror 3 is composed of a single spherical mirror having an effective reflecting surface at a position away from the optical axis AxC, and the spherical mirror has a predetermined radius of curvature RC. Optical axis Ax of condenser reflector 3
C passes through a center position (a position where the optical axis AxC intersects with a plane P2 on which the light source image I is formed) at which a large number of light source images I are formed by the optical element group 2. However, condenser reflector 3
Exists on this optical axis AxC. Note that the optical axis AxC of the condenser reflecting mirror 3 is parallel to each optical axis AxE1 of many optical elements E1 constituting the optical element group 2. Each light flux from a large number of light source images I is reflected and condensed by a condenser reflecting mirror 3 and then reflected by a reflective mask 5 as a surface to be irradiated via a plane mirror 4 as a deflecting mirror.
Are illuminated in an arc in a superimposed manner. The center of curvature OIF of the arc-shaped illumination area IF exists on the optical axis AxP of the projection optical system. Also, if the plane mirror 4 in FIG. 1 is removed, the illumination area IF is formed at the position of the irradiated surface IP in FIG. 1, and the center of curvature OIF of the illumination area IF at this time is Present on the optical axis AxC. Therefore, in the example shown in FIG. 1, the optical axis AxC of the condenser optical system 3 is not deflected by 90 ° by the plane mirror 4.
When the optical axis AxC of the condenser optical system 3 is deflected by 90 ° at the virtual reflecting surface 4a of the plane mirror 4 shown in FIG.
P is coaxial on the reflection mask 5. Therefore, it can be said that these optical axes (AxC, AxP) are optically coaxial. Therefore, the condenser optical system 3 and the projection optical system 6 are arranged so that each optical axis (AxC, AxP) passes optically through the center of curvature OIF of the arc-shaped illumination region IF.

A predetermined circuit pattern is formed on the surface of the reflection type mask 5.
Mask stage M movable two-dimensionally along a plane
S is held. The light reflected by the reflective mask 5 is imaged via a projection optical system 6 onto a wafer W coated with a resist as a photosensitive substrate, where the pattern image of the arc-shaped reflective mask 5 is formed. Projected and transferred. The wafer 7 is held on a substrate stage WS that can move two-dimensionally along the XY plane.

Here, the mask stage MS moves two-dimensionally along the XY plane via the first drive system D1, and the substrate stage WS moves along the XY plane via the second drive system D2. Move in a dimension. These two drive systems (D1,
In D2), each drive amount is controlled by the control system 8. Therefore, the control system 8 has two drive systems (D1, D2).
By moving the mask stage MS and the substrate stage WS in directions opposite to each other (in the direction of the arrow) via
The entire pattern formed on the reflective mask 5 is scanned and exposed on the wafer W via the projection optical system 6. Thereby, a good circuit pattern in the photolithography process for manufacturing a semiconductor device is transferred onto the wafer W, so that a good semiconductor device can be manufactured.

FIG. 3 is a schematic structural view of a first embodiment of the reflection reduction imaging optical system for X-ray lithography according to the present invention, shown as the projection optical system 6 in FIG. FIG. 4 shows aberration diagrams of the first embodiment. As shown in the figure, the optical system according to the present invention comprises a reflecting mirror M1 having a large radius of curvature and a first concave mirror M2 in the order of rays traveling from the mask M side to the wafer W side.
, The convex mirror M3 and the second concave mirror M4 are arranged coaxially, and the wafer side is configured to be telecentric, and an intermediate image is formed between the first concave mirror and the convex mirror. The first reflection imaging system from the object to the intermediate image is formed so as to apply a large reduction magnification to the reflection mirror M1, the concave mirrors M2, M4, and the convex mirror M having a large radius of curvature.
Reference numeral 3 denotes a reflection reduction imaging optical system for X-ray lithography in which an aspherical shape is formed.

Hereinafter, the reason and operation of the above-described configuration will be described. The present invention is configured so that the wafer side is telecentric, and in particular, the reduction magnification β
Is effective for an optical system of 1/3 to 1/10. The optical system according to the present invention avoids vignetting of a light beam that occurs when an optical system is constituted by a plurality of reflection systems without increasing the size of the entire system, and has an arc-shaped region (ring) even with an NA larger than 0.1. Aberrations (astigmatism, field curvature, coma) relating to off-axis imaging with respect to the field RF) are better corrected. Therefore, when the reduction magnification of the first reflection imaging system from the object to the intermediate image is β1 and the reduction magnification of the entire system is β, 0.8 <| β1 / β | <2 ( 1) is satisfied. When the value exceeds the upper limit “2” of the conditional expression (1), it is necessary to apply a large reduction magnification in the second image forming system from the intermediate image to the final image forming surface, and a large coma aberration occurs. If the lower limit of “0.8” of the conditional expression (1) is exceeded, it is difficult to avoid vignetting of a light beam that occurs when an optical system is configured by a plurality of reflection systems, and the entire optical system becomes large.

Here, the intermediate image is composed of a convex mirror M3 and a second mirror.
May be formed between the first concave mirror M2 and the convex mirror M3 as described above. Further, the intermediate image is a first concave mirror M2
Is more preferably formed closer to the convex mirror M3 than to an intermediate point between the convex mirror M3 and the convex mirror M3. Then, assuming that the vertices of curvature of the first concave mirror M2, the convex mirror M3, and the second concave mirror M4 are R2, R3, and R4, respectively, each curved surface is | R4 |> | R3 | (2) and | R2 | > | R4 | (3) is satisfied. Conditional expression (2) is an expression for the reflecting optical system of the present invention.
The size of the entire reflecting optical system is reduced while the curvature of field is reduced, and the occurrence of off-axis aberrations of the arc-shaped object is suppressed, and the mask M is positioned at a predetermined position without vignetting from the object.
In order to form an image. Conditional expression (3) is for suppressing the generation of coma in the concave mirrors M2 and M4, and for disposing the first concave mirror M2 with respect to the mask M farther than the second concave mirror M4. When deviating from conditional expression (2),
It becomes difficult to correct Petzval sum in the first imaging system from the object to the intermediate image. Further, if the condition (3) is not satisfied,
The occurrence of spherical aberration and coma in the concave mirrors M2 and M4 is suppressed, and it becomes difficult to arrange the first concave mirror M2 farther than the second concave mirror M4 with respect to the mask M. Further, the reflecting mirror M1, the concave mirrors M2, M4, and the convex mirror M3 having a large radius of curvature are formed in an aspherical shape, and aberrations related to off-axis imaging with respect to an arc-shaped region (ring field RF) (astigmatism, Field curvature, coma) are more favorably corrected.

Here, the reflecting mirror M1 having a large radius of curvature is used.
Assuming that the radius of curvature of the apex is R1, it is preferable that | R1 |> 3000 mm (4) close to a plane, and | R1 |> 1000 mm (5) has a sufficient effect. However, if it exceeds this range, the curvature of the image plane in the ring field RF becomes large, which is not preferable for practical use.

The aperture stop is located between the reflecting mirror M1 having a large radius of curvature and the first concave mirror M2, and the reduction side, that is, the wafer W side is a telecentric ring field. The same exposure conditions can be obtained. Further, since the optical path is turned back by the reflecting mirror M1 having a large radius of curvature, the mask M
The wafer W does not mechanically interfere with the optical path from the light source. Further, since the angle of incidence of light on each of the reflecting surfaces M1 to M4 (the angle from the normal of the reflecting surface) is almost 0 °, wavefront aberration due to phase shift by each reflecting surface formed by the multilayer film is generated. Is suppressed.

The term "telecentric" as used herein means that if the off-axis chief ray has an inclination Θw, the center of gravity of the light beam shifts when defocused within the depth of focus, but the shift amount is a line printed on the wafer. Width (40 at 13nm wavelength)
(Up to 70 nm) is preferable. That is, if the NA of the wafer W is NAw, the wavelength of the light source is λ, and T = (resolution / depth of focus) = (0.61λ / NAw) / (2λ / NAw ² ) = 0.30 (NAw), then Θw (Unit: radian) is preferably Δw <T / 2, that is, Δw <0.15 (NAw) (9). In order to further suppress the shift of the light beam, it is more preferable that Θw <T / 3, that is, Θw <0.10 (NAw) (10). Further, in order to further suppress the shift of the light beam, it is most preferable that Θw <T / 10, that is, Θw <0.030 (NAw) (11).

As described above, in the reflection reduction optical system according to the present invention, since the reduction side, that is, the wafer W side is a telecentric ring field, the same exposure condition can be obtained regardless of the location in the ring field RF.
Further, since the angle of incidence of light on each of the reflecting surfaces M1 to M4 (the angle from the normal of the reflecting surface) is almost 0 °, wavefront aberration due to phase shift by each reflecting surface formed by the multilayer film is generated. Is suppressed.

Hereinafter, the specifications of this embodiment will be described. In the [overall specifications], β1 is a reduction magnification of the first reflection imaging system, β is a reduction magnification of a composite imaging system composed of the first reflection imaging system and the second reflection imaging system, Θw is the tilt angle of the principal ray on the wafer side (unit: radian), NAw is the numerical aperture on the wafer side, NA
m = NAw × β, RF represents a ring field.
In [reflection mirror specifications], the first column is the number of the reflection surface from the mask M side, the second column R is the vertex radius of curvature of each reflection surface, the third column D is the vertex interval of each reflection surface, (R, Unit of D:
mm). The aspheric shape is represented by the following equation.

[0020]

Table 1 S (Y) = (Y ² / R) / [1+ ｛1- (1+
^{K) (Y 2 / R 2} )} 0.5] + C4Y 4 + C6Y 6 + C8Y
⁸ + C10Y ¹⁰ + C12Y ¹² + C14Y ¹⁴ Y: Height in the direction perpendicular to the optical axis S (Y): Displacement in the optical axis direction at height Y R: Radius of curvature K: Conic coefficient Cn: nth order aspheric coefficient (N: 4, 6, 8, 10, 1
2, 14) Em: × 10 ^−m (m: positive integer)

[0021]

Table 2 [Overall Specifications of Example 1] Magnification β: -0.25 (-／) Magnification β1: -0.302 | β1 / β |: 1.208 Θw: 0 (complete telecentric) Mask Side NAm: 0.0375 (wafer side NAw: 0.15) Mask side RF inner radius: 80 (wafer side RF inner radius: 20) Mask side RF outer radius: 84 (wafer side RF outer radius: 21)

[0022]

Table 3 [Specifications of Reflecting Mirror of Example 1] Reflecting surface number R DM: ∞232.425603 1: 975.48528 -651.2235204 Aspherical reflecting surface K = 0.0000 C4 = 0.204538E-07 C6 = 0.152945E-12 C8 = -0.676190E-15 C10 = 0.877334E-18 C12 = -0.284115E-21 C14 = 0.336432E-25 2: 420.56661 301.582804 Aspherical reflection surface K = -0.008362 C4 = -0.244813E-09 C6 = -0.277850E-14 C8 = 0.552919E-19 C10 = -0.176542E-23 C12 = 0.263558E-28 C14 = -0.174824E- 333: 165.026632 -1 6.764001 aspherical reflecting surface K = 5.400522 C4 = 0.182213E-06 C6 = -0.182138E-08 C8 = 0.591109E-11 C10 = -0.974832E-14 C12 = 0.577382E-174 : 222.63380 230.382125 Aspherical reflective surface K = 0.024833 C4 = −0.302273E-09 C6 = −0.137150E−13 C8 = 0.445752E−17 C10 = −0.100607E−20 C12 = 0 .112666E-24 C14 = -0.500526E-29 W: ∞

[0023]

Table 4 [Overall Specifications of Example 2] Magnification β: -0.25 (-／) Magnification β1: -0.286 | β1 / β |: 1.144 Θw: 0 (complete telecentric) Mask Side NAm: 0.0275 (wafer side NAw: 0.11) Mask side RF inner radius: 80 (wafer side RF inner radius: 20) Mask side RF outer radius: 84 (wafer side RF outer radius: 21)

[0024]

Table 5 [Reflection Mirror Specifications of Example 2] Reflection surface number R D M: ∞276.061144 1: -28012.04588 -687.502045 Aspherical reflection surface K = 0.000000 C4 = 0.544227E- 08 C6 = -0.285778E-11 C8 = 0.125689E-14 C10 = -0.260011E-18 2: 422.86751 292.386131 Aspherical reflective surface K = -0.025861 C4 = -0.293767E-09 C6 = -0.244633E-14 C8 = 0.633376E-19 C10 = -0.242474E-23 C12 = 0.457770E-28 C14 = -0.282080E-33 3: 159.26139-195.053964 aspherical reflection Surface K = 5.597772 C4 = 0. 161700E-06 C6 = -0.104907E-08 C8 = 0.729989E-11 C10 = -0.148453E-13 C12 = 0.106045E-16 4: 223.10628 235.4436395 Aspherical reflective surface K = 0.021440 C4 = -0.366034E-09 C6 = 0.102933E-13 C8 = -0.834417E-17 C10 = 0.209415E-20 C12 = -0.259827E-24 C14 = 0.126747E-28 W: ∞ FIG. 6 and 7 show coma aberration diagrams on the wafer W of the reflection reduction imaging optical systems of the first and second embodiments. This coma aberration diagram is obtained by tracing light rays from the mask M side using light having a wavelength of 13 nm. Here, FIG. 4A is a coma aberration diagram in the meridional direction at an image height Y = 21 mm, FIG. 4B is a coma aberration diagram in the meridional direction at an image height Y = 20.5 mm, and FIG. High Y = 20m
FIG. 4D is a coma aberration diagram in the meridional direction at m.
4A is a coma aberration diagram in the sagittal direction at an image height Y = 21 mm, FIG. 4E is a coma aberration diagram in a sagittal direction at an image height Y = 20.5 mm, and FIG. 4F is a sagittal direction diagram at an image height Y = 20 mm. It is a coma aberration figure. FIG.
6A is a coma aberration diagram in the meridional direction when the image height Y is 21 mm, FIG. 6B is a coma aberration diagram in the meridional direction when the image height Y is 20.5 mm, and FIG.
FIG. 6D is a coma aberration diagram in the sagittal direction when the image height Y is 21 mm, FIG. 6E is a coma aberration diagram in the sagittal direction when the image height Y is 20.5 mm, FIG. 6F shows the object height Y = 2.
It is a coma aberration figure in the sagittal direction at 0 mm.

As can be seen from the figure, according to the present embodiment, good imaging performance is obtained. As described above, according to the present embodiment, a mask M and a wafer W are synchronously scanned in a ring field, so that an exposure apparatus with a wide field of view can be obtained. In the ring field, an image with high resolution and low distortion can be obtained. Is obtained.

The present invention assumes an optical system that prints a pattern having a line width of 70 nm or less using X-rays having a wavelength of 13 nm as a light source. However, since the present optical system is constituted by a reflecting mirror, other optical systems are used. Needless to say, it can be used satisfactorily. That is, 1 nm hard X-ray, 5 to 15 nm soft X-ray, 126 nm, 146 nm, 157 nm, 172
nm light source, 193 nm ArF excimer laser light source, 248 nm KrF excimer laser light source, and the like.

Although the reflecting mirrors M1, M2, M3, and M4 are shown symmetrically with respect to the optical axis AxP, portions that are not used (light is not reflected) may be deleted (off-axis type). Further, for the sake of arrangement, even if a plane mirror is arranged at an arbitrary position in the optical path and the optical path is bent three-dimensionally, it is substantially the same as the present invention. Further, in the first embodiment shown in FIG. 1, the mask M is of a reflection type, but it goes without saying that the reflection reduction optical system according to the present invention can also be used for a transmission type mask.

[0028]

As described above, according to the present invention, a reflection reduction imaging optical system suitable for, for example, X-ray lithography, which can obtain sufficient imaging performance with a simple configuration, can be obtained. By applying this optical system to an exposure apparatus, a good mask pattern image can be transferred onto a photosensitive substrate. Also, by using such an optical system in a photolithography process of transferring a mask pattern image onto a photosensitive substrate, a good mask pattern image can be transferred onto the photosensitive substrate. Thereby, a good semiconductor device can be manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an exposure apparatus using a reflection reduction imaging optical system of the present invention.

FIG. 2 is a front view showing a configuration of a reflection element group 2 shown in FIG. 1;

FIG. 3 is a configuration diagram showing a first embodiment of the present invention.

FIG. 4 is an aberration diagram of the first embodiment.

FIG. 5 is a configuration diagram showing a second embodiment of the present invention.

FIG. 6 is an aberration diagram of the second embodiment.

[Explanation of symbols]

 M ... Mask W ... Wafer M1 ... Reflective mirror M2 ... First concave mirror M3 ... Convex mirror M4 ... Second concave mirror

Claims (9)

[Claims] 1. A reflection reduction imaging optical system for reducing and forming an image of an object on a final image plane, wherein the reflection reduction imaging optical system comprises:
A first reflection imaging system for converging a light beam from the object to form an intermediate image, and a second reflection imaging system for condensing a light beam from the intermediate image to form a final image plane When the reduction magnification of the first reflection imaging system is β1, and the reduction magnification of the composite imaging system composed of the first reflection imaging system and the second reflection imaging system is β, 0. 8 is a reflection reduction imaging optical system, which satisfies 8 <| β1 / β | <2. 2. The first reflection imaging system includes a reflection mirror having a predetermined reflection surface and a first concave mirror, and the second reflection imaging system includes a convex mirror and a second concave mirror. 2. The reflection reduction imaging optical system according to claim 1, wherein the reflection reduction imaging optical system is configured. 3. The first concave mirror, the convex mirror and the second mirror.
3. The reflection according to claim 2, wherein, when the apex radii of curvature of the concave mirror are R2, R3, and R4, respectively, | R4 |> | R3 | and | R2 |> | R4 | are satisfied. Reduction imaging optics. 4. The reflecting mirror having the predetermined reflecting surface, and the reflecting surfaces of the first concave mirror, the convex mirror, and the second concave mirror are each formed in an aspherical shape. The reflection reduction imaging optical system according to claim 2 or 3, wherein 5. The first reflection imaging system has a configuration including a reflecting mirror having a predetermined reflecting surface and a first concave mirror, and the second reflection imaging system has a configuration including a second concave mirror. The reflection reduction imaging optical system according to claim 1, wherein: 6. The reflecting mirror having the predetermined reflecting surface, and the reflecting surfaces of the first concave mirror and the second concave mirror are each formed in an aspherical shape. 6. The reflection reduction imaging optical system according to 5. 7. The reflection reduction imaging system according to claim 1, wherein each of the first reflection imaging system and the second reflection imaging system is constituted by two reflecting mirrors. Optical system. 8. A mask stage for holding a mask on the object plane, a substrate stage for holding a photosensitive substrate on the final image plane, and an illumination system for illuminating the mask with exposure light.
The reflection reduction imaging optical system according to any one of claims 1 to 7, which projects the pattern image of the mask onto the photosensitive substrate. An exposure apparatus, wherein a pattern on the entire surface of the mask is exposed on the photosensitive substrate by relatively moving a mask stage and a substrate stage. 9. The method according to claim 1, wherein
In the exposure method using the reflection reduction imaging optical system according to the item, an illumination step of illuminating a mask disposed on the object plane, the reflection reduction imaging optical system, the pattern image of the mask, the final image A projecting step of projecting onto a photosensitive substrate set on a surface.