JP2000039472A - Magnetic sensor and method for regulating characteristics of magnetic sensor - Google Patents
Magnetic sensor and method for regulating characteristics of magnetic sensorInfo
- Publication number
- JP2000039472A JP2000039472A JP10208121A JP20812198A JP2000039472A JP 2000039472 A JP2000039472 A JP 2000039472A JP 10208121 A JP10208121 A JP 10208121A JP 20812198 A JP20812198 A JP 20812198A JP 2000039472 A JP2000039472 A JP 2000039472A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic sensor
- magnetoresistive element
- magnet
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 3
- 230000001105 regulatory effect Effects 0.000 title abstract 3
- 239000000696 magnetic material Substances 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 abstract description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052742 iron Inorganic materials 0.000 abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010941 cobalt Substances 0.000 abstract description 3
- 229910017052 cobalt Inorganic materials 0.000 abstract description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、磁気センサ等に関
するもので、より具体的には、回転センサ、角度セン
サ、磁気識別センサ、鋼球センサ、および、近接センサ
等として用いられる磁気抵抗素子を用いた磁気センサ等
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensor and the like, and more particularly, to a magnetic resistance element used as a rotation sensor, an angle sensor, a magnetic identification sensor, a steel ball sensor, a proximity sensor, and the like. The present invention relates to a magnetic sensor and the like used.
【0002】[0002]
【従来の技術】従来より、磁気抵抗素子を用いた磁気セ
ンサが、磁気の検出に広く用いられている。磁気抵抗素
子は磁束密度の変化に応じて抵抗値が変化する素子であ
り、InSb等の半導体から形成される。2. Description of the Related Art Conventionally, magnetic sensors using a magnetoresistive element have been widely used for detecting magnetism. The magnetoresistive element is an element whose resistance value changes according to a change in magnetic flux density, and is formed from a semiconductor such as InSb.
【0003】図7は、従来より用いられている磁気セン
サを示した断面図である。磁気センサは、磁気抵抗素子
21と、磁気抵抗素子21の下部に設けられた、該磁気
抵抗素子21にバイアス磁界を印加するマグネット22
とを有する。これらの磁気抵抗素子21やマグネット2
2が筐体25内に固定され、磁気センサが構成されてい
る。FIG. 7 is a sectional view showing a conventional magnetic sensor. The magnetic sensor includes a magnetoresistive element 21 and a magnet 22 provided below the magnetoresistive element 21 for applying a bias magnetic field to the magnetoresistive element 21.
And These magnetoresistive element 21 and magnet 2
2 is fixed in the housing 25 to form a magnetic sensor.
【0004】磁気抵抗素子21は、感磁部となるパター
ン面23とパターン面23を形成するための基台部24
とから構成されている。パターン面23は、例えばIn
Sb等の材料から形成されており、単結晶InSbを研
磨したものや蒸着により形成されたもの等が用いられて
いる。The magnetoresistive element 21 includes a pattern surface 23 serving as a magnetic sensing portion and a base portion 24 for forming the pattern surface 23.
It is composed of The pattern surface 23 is, for example, In
It is made of a material such as Sb, and a material obtained by polishing single crystal InSb or a material formed by vapor deposition is used.
【0005】この磁気抵抗素子21は、感磁部となるパ
ターン面23に印加される磁界の変化を検出する。すな
わち、磁気抵抗素子21のパターン面23上方に磁性体
が近づくと、それに伴いパターン面23に印加される磁
界が変化する。磁気抵抗素子21は、その磁界の変化を
信号として出力する。The magnetoresistive element 21 detects a change in a magnetic field applied to a pattern surface 23 serving as a magnetic sensing portion. That is, when the magnetic body approaches above the pattern surface 23 of the magnetoresistive element 21, the magnetic field applied to the pattern surface 23 changes accordingly. The magnetoresistive element 21 outputs a change in the magnetic field as a signal.
【0006】また、この従来例は、磁気抵抗素子21に
バイアス磁界を印加するマグネット22を磁気抵抗素子
21の下部に備えている。通常、磁気抵抗素子の出力信
号電圧は微弱であるため、このままでは取り扱いが困難
である。そこで、この従来例においては、マグネット2
2により磁気抵抗素子21にバイアス磁界を加えて磁気
動作点を移動させ、微小な磁界の変化に対して出力信号
レベルを大きくとれるように構成されている。In this conventional example, a magnet 22 for applying a bias magnetic field to the magnetoresistive element 21 is provided below the magnetoresistive element 21. Usually, the output signal voltage of the magnetoresistive element is very weak, so that it is difficult to handle it as it is. Therefore, in this conventional example, the magnet 2
2, a bias magnetic field is applied to the magnetoresistive element 21 to move the magnetic operating point, and the output signal level can be increased with respect to a minute change in the magnetic field.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、従来の
磁気センサには次のような問題点があった。すなわち、
従来の磁気センサは、磁気抵抗素子の抵抗値やマグネッ
トの磁束密度にばらつきが生じた場合、それらを調整す
る手段を有さないため、磁気センサの抵抗値や感度にば
らつきが生じるという問題があった。また、磁気センサ
の抵抗値や感度のばらつきが大きく、規格から外れる場
合は、不良品として廃棄せざるをえなかった。However, the conventional magnetic sensor has the following problems. That is,
The conventional magnetic sensor has a problem that when the resistance value of the magnetoresistive element and the magnetic flux density of the magnet vary, there is no means for adjusting them, so that the resistance value and the sensitivity of the magnetic sensor vary. Was. In addition, when the magnetic sensor greatly varies in resistance value and sensitivity and deviates from the standard, the magnetic sensor has to be discarded as a defective product.
【0008】従って、本発明の目的は、磁気センサの抵
抗値や感度にばらつきが生じた場合に、簡単な手段で特
性が調整できる磁気センサを提供することにある。Accordingly, it is an object of the present invention to provide a magnetic sensor whose characteristics can be adjusted by simple means when the resistance value and the sensitivity of the magnetic sensor vary.
【0009】[0009]
【課題を解決するための手段】この発明は、磁気抵抗素
子を用いた磁気センサに向けられるものであって、上述
した技術的課題を解決するため、次のような構成を備え
ることを特徴としている。SUMMARY OF THE INVENTION The present invention is directed to a magnetic sensor using a magnetoresistive element, and has the following structure in order to solve the above-mentioned technical problem. I have.
【0010】すなわち、この発明は、磁気抵抗素子と、
前記磁気抵抗素子の下部に設けられた前記磁気抵抗素子
にバイアス磁界を印加するマグネットと、前記マグネッ
トに付加して設けられた前記バイアス磁界の強度を調整
する磁性体と、を備えたことを特徴とする磁気センサで
ある。That is, the present invention provides a magnetoresistive element,
A magnet provided below the magnetoresistive element for applying a bias magnetic field to the magnetoresistive element; and a magnetic body provided in addition to the magnet for adjusting the intensity of the bias magnetic field. Is a magnetic sensor.
【0011】このように、マグネットに付加して磁性体
を設けることによって、磁気抵抗素子に印加されるバイ
アス磁界の強度を調節することができる。したがって、
磁気センサの抵抗値や感度の微調整が可能となるため、
磁気センサの抵抗値や感度のばらつきを小さくすること
ができる。また、従来は抵抗値や感度が規格外であるた
め廃棄されていた磁気センサの特性を調節することがで
き、歩留まりを向上させることができる。As described above, by providing a magnetic body in addition to the magnet, the intensity of the bias magnetic field applied to the magnetoresistive element can be adjusted. Therefore,
Since the resistance value and sensitivity of the magnetic sensor can be fine-tuned,
Variations in the resistance value and sensitivity of the magnetic sensor can be reduced. In addition, the characteristics of the magnetic sensor that has been discarded because the resistance value and the sensitivity are out of the standard can be adjusted, and the yield can be improved.
【0012】[0012]
【発明の実施の形態】本発明の実施形態を図1から図6
を用いて説明する。1 to 6 show an embodiment of the present invention.
This will be described with reference to FIG.
【0013】図1は、マグネット1の下部に磁性体2を
設けた磁気センサを示している。このように、マグネッ
ト1の下部に磁性体2を設けることによって、磁気抵抗
素子3に印加されるバイアス磁界の強度を変化させ、磁
気センサの抵抗値や感度を調節することができる。FIG. 1 shows a magnetic sensor in which a magnetic body 2 is provided below a magnet 1. Thus, by providing the magnetic body 2 below the magnet 1, the intensity of the bias magnetic field applied to the magnetoresistive element 3 can be changed, and the resistance value and sensitivity of the magnetic sensor can be adjusted.
【0014】また、例えば図1に示す実施例において、
マグネット1として5mm×5mm×6mmのフェライ
トマグネットを、磁性体2として厚さ1mmの鉄板を設
けた磁気センサでは、フェライトマグネットの下部に鉄
板を設けない場合は1kΩであった入力抵抗が鉄板を設
けることによって1.03kΩへと上昇した。また、同
様の磁気センサにおいて、磁気抵抗素子3の上方1.5
mmの距離に検出物を近づけると、フェライトマグネッ
トの下部に鉄板を設けない場合に比べて、検出力が40
mVから56mVへと40%上昇した。For example, in the embodiment shown in FIG.
In a magnetic sensor having a 5 mm × 5 mm × 6 mm ferrite magnet as the magnet 1 and a 1 mm thick iron plate as the magnetic body 2, the input resistance is 1 kΩ when the iron plate is not provided below the ferrite magnet. As a result, it increased to 1.03 kΩ. Further, in the same magnetic sensor, 1.5 times above the magnetoresistive element 3.
When the detection object is brought closer to the distance of 0.2 mm, the detection power is 40 mm lower than when the iron plate is not provided below the ferrite magnet.
It increased by 40% from mV to 56 mV.
【0015】また、このように磁性体2として鉄板を使
用する場合、鉄板は安価であり、加工や取り扱いが容易
で、バイアス磁界の強度のより細かい微調整が可能であ
るという利点がある。なお、磁性体2としては、付加し
たマグネットやコバルト、コバルトの化合物、ニッケ
ル、フェライトを使用してもよい。When an iron plate is used as the magnetic body 2 as described above, the iron plate has the advantages that it is inexpensive, easy to process and handle, and allows finer adjustment of the intensity of the bias magnetic field. As the magnetic material 2, an added magnet, cobalt, a compound of cobalt, nickel, or ferrite may be used.
【0016】また、磁性体の形状は任意でよい。従っ
て、図2のように、磁性体4がマグネット1の周囲をも
取り囲むような形状や、図3のように、磁性体5がマグ
ネット1の底面よりも大きな形状、あるいは図4のよう
に磁性体6がマグネット1の底面よりも小さな形状であ
ってもよい。The shape of the magnetic material may be arbitrary. Therefore, as shown in FIG. 2, the magnetic body 4 also surrounds the periphery of the magnet 1, as shown in FIG. 3, the magnetic body 5 is larger than the bottom surface of the magnet 1, as shown in FIG. The body 6 may have a shape smaller than the bottom surface of the magnet 1.
【0017】図5は、マグネット1の下部、および磁気
抵抗素子3とマグネット1との間に磁性体7,8を設け
た磁気センサを示している。また、図6は、磁気抵抗素
子3とマグネット1との間に、磁性体ではなく非磁性体
10を設けた磁気センサを示している。FIG. 5 shows a magnetic sensor in which magnetic members 7 and 8 are provided below the magnet 1 and between the magnetoresistive element 3 and the magnet 1. FIG. 6 shows a magnetic sensor in which a nonmagnetic material 10 is provided between the magnetoresistive element 3 and the magnet 1 instead of a magnetic material.
【0018】これらの場合は、図1から図4に示す実施
例の場合と同様に、マグネットの下部に磁性体を設ける
ことによって磁気抵抗素子に印加されるバイアス磁界の
強度が強められている。図5に示す実施例では、磁気抵
抗素子3とマグネット1との間に磁性体8を設けること
によって、そのバイアス磁界の強度をさらに強めること
ができる。図6に示す実施例では、磁気抵抗素子3とマ
グネット1との間に非磁性体10からなる間隔を設ける
ことによって、そのバイアス磁界の強度を弱めることが
できる。このようにして、磁気センサの抵抗値や感度の
より細かい微調整が可能となる。In these cases, as in the embodiment shown in FIGS. 1 to 4, the strength of the bias magnetic field applied to the magnetoresistive element is increased by providing a magnetic body below the magnet. In the embodiment shown in FIG. 5, by providing the magnetic body 8 between the magnetoresistive element 3 and the magnet 1, the strength of the bias magnetic field can be further increased. In the embodiment shown in FIG. 6, the strength of the bias magnetic field can be reduced by providing an interval made of the non-magnetic material 10 between the magnetoresistive element 3 and the magnet 1. In this way, finer fine adjustment of the resistance value and sensitivity of the magnetic sensor is possible.
【0019】なお、本実施例においては、磁性体をマグ
ネットの上部および下部に設ける場合を示したが、これ
に限らず、磁性体をマグネットの側面に設けてもよい。In this embodiment, the case where the magnetic material is provided on the upper and lower portions of the magnet has been described. However, the present invention is not limited to this, and the magnetic material may be provided on the side surface of the magnet.
【0020】[0020]
【発明の効果】以上のように、この発明によれば、マグ
ネットに付加して磁性体を設けることによって、磁気抵
抗素子に印加されるバイアス磁界の強度を調節すること
ができる。したがって、磁気センサの抵抗値や感度の微
調整が可能となるため、磁気センサの抵抗値や感度のば
らつきを小さくすることができる。また、従来は抵抗値
や感度が規格外であるため廃棄されていた磁気センサの
特性を調節することができ、歩留まりを向上させること
ができる。As described above, according to the present invention, the strength of the bias magnetic field applied to the magnetoresistive element can be adjusted by providing a magnetic material in addition to the magnet. Therefore, fine adjustment of the resistance value and sensitivity of the magnetic sensor can be performed, and variation in the resistance value and sensitivity of the magnetic sensor can be reduced. In addition, the characteristics of the magnetic sensor that has been discarded because the resistance value and the sensitivity are out of the standard can be adjusted, and the yield can be improved.
【0021】このように、この発明によれば、磁気セン
サの抵抗値や感度にばらつきが生じた場合に、簡単な手
段で特性が調整できる磁気センサを提供することができ
る。As described above, according to the present invention, it is possible to provide a magnetic sensor whose characteristics can be adjusted by simple means when the resistance value and the sensitivity of the magnetic sensor vary.
【図1】この発明の一実施形態による磁気抵抗素子を用
いた磁気センサを示す断面図である。FIG. 1 is a sectional view showing a magnetic sensor using a magnetoresistive element according to an embodiment of the present invention.
【図2】この発明の一実施形態による磁気抵抗素子を用
いた磁気センサを示す断面図である。FIG. 2 is a sectional view showing a magnetic sensor using a magnetoresistive element according to one embodiment of the present invention.
【図3】この発明の一実施形態による磁気抵抗素子を用
いた磁気センサを示す断面図である。FIG. 3 is a sectional view showing a magnetic sensor using a magnetoresistive element according to one embodiment of the present invention.
【図4】この発明の一実施形態による磁気抵抗素子を用
いた磁気センサを示す断面図である。FIG. 4 is a cross-sectional view showing a magnetic sensor using a magnetoresistive element according to one embodiment of the present invention.
【図5】この発明の一実施形態による磁気抵抗素子を用
いた磁気センサを示す断面図である。FIG. 5 is a sectional view showing a magnetic sensor using a magnetoresistive element according to one embodiment of the present invention.
【図6】この発明の一実施形態による磁気抵抗素子を用
いた磁気センサを示す断面図である。FIG. 6 is a sectional view showing a magnetic sensor using a magnetoresistive element according to one embodiment of the present invention.
【図7】従来の磁気抵抗素子を用いた磁気センサを示す
断面図である。FIG. 7 is a sectional view showing a magnetic sensor using a conventional magnetoresistive element.
1 マグネット 2 磁性体 3 磁気抵抗素子 DESCRIPTION OF SYMBOLS 1 Magnet 2 Magnetic body 3 Magnetoresistive element
Claims (2)
に設けられた前記磁気抵抗素子にバイアス磁界を印加す
るマグネットと、前記マグネットに付加して設けられた
前記バイアス磁界の強度を調整する磁性体と、を備えた
ことを特徴とする磁気センサ。1. A magnetoresistive element, a magnet provided below the magnetoresistive element for applying a bias magnetic field to the magnetoresistive element, and adjusting the strength of the bias magnetic field provided in addition to the magnet. A magnetic sensor comprising: a magnetic body.
に設けられた前記磁気抵抗素子にバイアス磁界を印加す
るマグネットと、を有してなる磁気センサにおいて、前
記バイアス磁界の強度を調整する磁性体を前記マグネッ
トに付加して設けることによって前記磁気抵抗素子に印
加される磁界強度を調整する、磁気センサの特性調整方
法。2. A magnetic sensor comprising: a magnetoresistive element; and a magnet provided below the magnetoresistive element for applying a bias magnetic field to the magnetoresistive element, wherein the intensity of the bias magnetic field is adjusted. A method for adjusting the characteristics of a magnetic sensor, comprising adjusting a magnetic field intensity applied to the magnetoresistive element by providing a magnetic material in addition to the magnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10208121A JP2000039472A (en) | 1998-07-23 | 1998-07-23 | Magnetic sensor and method for regulating characteristics of magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10208121A JP2000039472A (en) | 1998-07-23 | 1998-07-23 | Magnetic sensor and method for regulating characteristics of magnetic sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000039472A true JP2000039472A (en) | 2000-02-08 |
Family
ID=16550992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10208121A Pending JP2000039472A (en) | 1998-07-23 | 1998-07-23 | Magnetic sensor and method for regulating characteristics of magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000039472A (en) |
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|---|---|---|---|---|
| JP2004233103A (en) * | 2003-01-28 | 2004-08-19 | Denso Corp | Rotation detection magnetic sensor and method for manufacturing the same |
| JP2005327860A (en) * | 2004-05-13 | 2005-11-24 | Asahi Kasei Corp | Ferromagnetic particle detector |
| JP2005327861A (en) * | 2004-05-13 | 2005-11-24 | Asahi Kasei Corp | Ferromagnetic particle detector |
| JP2010256199A (en) * | 2009-04-27 | 2010-11-11 | Murata Mfg Co Ltd | Magnetometric sensor |
| WO2014123142A1 (en) * | 2013-02-07 | 2014-08-14 | 三菱電機株式会社 | Magnetic sensor device |
| CN105122316A (en) * | 2013-04-05 | 2015-12-02 | 三菱电机株式会社 | image reading device |
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| US20170153125A1 (en) * | 2014-06-18 | 2017-06-01 | Mitsubishi Electric Corporation | Magnetic sensor device and method for producing same |
| CN107148641A (en) * | 2014-10-03 | 2017-09-08 | 三菱电机株式会社 | Image read-out |
| US10230006B2 (en) | 2012-03-20 | 2019-03-12 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with an electromagnetic suppressor |
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-
1998
- 1998-07-23 JP JP10208121A patent/JP2000039472A/en active Pending
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004233103A (en) * | 2003-01-28 | 2004-08-19 | Denso Corp | Rotation detection magnetic sensor and method for manufacturing the same |
| JP2005327860A (en) * | 2004-05-13 | 2005-11-24 | Asahi Kasei Corp | Ferromagnetic particle detector |
| JP2005327861A (en) * | 2004-05-13 | 2005-11-24 | Asahi Kasei Corp | Ferromagnetic particle detector |
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| JPWO2014123142A1 (en) * | 2013-02-07 | 2017-02-02 | 三菱電機株式会社 | Magnetic sensor device |
| CN104969084A (en) * | 2013-02-07 | 2015-10-07 | 三菱电机株式会社 | Magnetic sensor device |
| WO2014123142A1 (en) * | 2013-02-07 | 2014-08-14 | 三菱電機株式会社 | Magnetic sensor device |
| EP2983142A4 (en) * | 2013-04-05 | 2016-11-23 | Mitsubishi Electric Corp | IMAGE READING DEVICE |
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| CN105122316B (en) * | 2013-04-05 | 2018-01-30 | 三菱电机株式会社 | image reading device |
| JP2016522892A (en) * | 2013-04-26 | 2016-08-04 | アレグロ・マイクロシステムズ・エルエルシー | Integrated circuit package having split lead frame and magnet |
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| JPWO2015190468A1 (en) * | 2014-06-11 | 2017-04-20 | 三菱電機株式会社 | Magnetic sensor device |
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| CN107148641A (en) * | 2014-10-03 | 2017-09-08 | 三菱电机株式会社 | Image read-out |
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