JP2000031345A - Semiconductor device - Google Patents

Abstract

(57) Abstract: An object of the present invention is to provide a semiconductor device having improved reliability and the like without damaging the surface of a semiconductor chip when a sealing resin is cured. SOLUTION: The present invention relates to an interposer 2 in which a semiconductor chip 10 is face-down by solder bumps 11.
In the semiconductor device connected to the semiconductor chip 10 and the gap between the surface of the semiconductor chip 10 and the interposer 20, the underfill 30 is filled.
The distribution density of the semiconductor chip 10 was made sparse on the interposer 20 side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor chip is mounted face down.

[0002]

2. Description of the Related Art In recent years, the degree of integration of semiconductor chips has been improved.
The distance between the external terminals of the semiconductor chip has become narrower, and unlike the wiring size of the electrically connected printed wiring board, it has become difficult to directly connect the semiconductor chip to the printed wiring board. Therefore, an interposer is interposed between the semiconductor chip and the printed wiring board, and the semiconductor chip and the printed wiring board are electrically connected using the interposer.

[0003] A semiconductor chip is electrically connected to the above-mentioned interposer face down via solder bumps or the like. The gap between the semiconductor chip and the interposer is filled with a sealing resin (underfill) in order to prevent element deterioration due to external factors such as humidity.

[0004]

As described above, in the connection method in which a semiconductor chip is connected face-down to an interposer, a gap between the semiconductor chip and the interposer is filled with a sealing resin after the connection. However, when the sealing resin is cured after filling, the filler such as silica or alumina contained in the sealing resin comes into contact with the semiconductor chip surface. For this reason, wirings and the like are damaged, and problems such as a decrease in reliability, a decrease in a non-defective product rate, management of a process, and difficulty in a process have occurred.

The present invention has been made in view of the above-mentioned conventional problems, and provides a semiconductor device having improved reliability and the like without damaging the semiconductor chip surface when the sealing resin is cured. With the goal.

[0006]

According to the present invention, there is provided a semiconductor device in which a semiconductor chip is face-down connected to a circuit board by bumps and a gap between the semiconductor chip surface and the circuit board is filled with a sealing resin. The distribution density of the filler contained in the sealing resin is characterized by being dense on the circuit board side and sparse on the semiconductor chip side.

According to the above configuration, since the filler is sparse on the surface of the semiconductor chip, no damage is given to the surface of the semiconductor chip.

The present invention also provides a semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a gap between the surface of the semiconductor chip and the circuit board is filled with a sealing resin. The size of the filler contained therein is large on the circuit board side and small on the semiconductor chip side.

According to the above configuration, the filler located on the surface side of the semiconductor chip is small, so that the surface of the semiconductor chip is not damaged.

Further, the present invention provides a semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a gap between the surface of the semiconductor chip and the circuit board is filled with a sealing resin. The sealing resin filled between the circuit board does not contain any filler,
Further, the sealing resin provided on the side surface of the semiconductor chip contains a filler.

According to the above configuration, no filler is provided on the surface of the semiconductor chip, so that the surface of the semiconductor chip is not damaged.

The sealing resin is characterized in that it does not shrink or expand when the resin is cured.

According to the above configuration, since the underfill does not shrink / expand when cured, damage to the semiconductor chip surface is suppressed.

The present invention also provides a semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a sealing resin is filled in a gap between the semiconductor chip surface and the circuit board. Alternatively, an uneven portion is formed on a surface or both surfaces of the circuit board.

As described above, since the surface of the semiconductor chip is made uneven, the surface of the semiconductor chip is not damaged.

The present invention also provides a semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a gap between the semiconductor chip surface and the circuit board is filled with a sealing resin. It is characterized in that the wiring portions are gathered at the center of the chip.

According to the above configuration, since the pattern on the surface of the semiconductor chip is collected at the center, the surface of the semiconductor chip (pattern surface) is not damaged.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view showing a semiconductor device according to the first embodiment of the present invention.

As shown in FIG. 1, an electrode is formed around a semiconductor chip 10 and a solder bump 11 is provided on the electrode. In the interposer 20 as a circuit board, wiring electrodes corresponding to the electrodes of the semiconductor chip 10 to be bonded are formed on the first surface, and are connected to the wiring electrodes on the first surface by via holes on the second surface. Electrode pad 21 is provided. The electrode pads 21 are external terminals that are electrically connected to the outside such as a printed wiring board.

The wiring electrode pattern of the interposer 20 is formed according to a larger design rule than the wiring pattern in the semiconductor chip 10. For example, the wiring interval is 1
In many cases, it is about 00 μm.

As shown in the figure, the semiconductor chip 10 is connected to the interposer 20 face down (pattern side down) and connected to the wiring electrodes of the interposer 20 (not shown) by the solder bumps 11.

The gap between the surface of the semiconductor chip 10 and the interposer 20 is filled with an underfill 30 for resin sealing. The underfill 30 has an epoxy-based sealing resin 31 filled with a filler 32 such as silica or alumina.

In this embodiment, the distribution (density) of the filler 30 in the underfill 30 is changed between the interposer 20 and the semiconductor chip 10.
"Dense" distribution of the filler 32 on the interposer 20 side
In addition, the distribution of the filler 32 on the semiconductor chip 10 side is set to “sparse”.

Ideally, it is desirable that no filler 32 exist on the surface of the semiconductor chip 10. The content of the filler 32 is preferably about 60 to 90 wt% on the average of the entire underfill 30.

It is preferable that the filler 32 be spherical and have the smallest possible hardness, and have the smallest possible diameter, for example, about several μmφ at the maximum.

As described above, the filler 32 is sparse on the surface side of the semiconductor chip 10, so that the surface of the semiconductor chip 10 is not damaged. Further, since the design rule of the wiring electrode pattern of the interposer 20 is large, even if the filling material 32 is dense, the wiring is not damaged.

As a method of changing the distribution of the filler 32 in the underfill 30, for example, a method in which the mixing ratio of the sealing resin 31 and the filler 32 is changed is prepared, and first, the mixing ratio of the filler 32 is high. A method of injecting an underfill material and then injecting an underfill material having a low mixing ratio of the filler 32 to reduce the distribution (density) of the filler on the semiconductor chip 10 side, or a method of reducing the sealing resin 31 and the filler In consideration of the specific gravity balance with the semiconductor material 32, after filling, the filler material 32 is allowed to settle to some extent and then cured to change the distribution of the filler material 32
There are various methods such as a method of making the 0 side “sparse” and the interposer 20 side “dense”.

FIG. 2 is a schematic sectional view showing a semiconductor device according to a second embodiment of the present invention.

As in the first embodiment, the semiconductor chip 10 is connected to the interposer 20 face down (pattern side down) and connected to the wiring electrodes of the interposer 20 (not shown) by the solder bumps 11.

The gap between the surface of the semiconductor chip 10 and the interposer 20 is filled with an underfill 30 for resin sealing. The underfill 30 is composed of a filler 32 such as silica or alumina in an epoxy resin 31.
a and 32b are filled.

In this embodiment, the size of the filler in the underfill 30 is changed between the interposer 20 and the semiconductor chip 10. The size of the filler 32a on the interposer 20 side is large, and the size of the filler 32b on the semiconductor chip 10 side is small. It is preferable that the filler content, hardness, and shape are as low as possible in hardness, spherical, and as small as possible in diameter, for example, about several μmφ at the maximum. In particular, for the diameter,
The filling material 32b is as small as possible, preferably about 1 μmφ or less, and the filling material 32a is also preferably about several μmφ.

As described above, since the diameter of the filler 32b is small on the front side of the semiconductor chip 10, the semiconductor chip 1
No damage to the 0 surface. Further, since the design rule of the wiring electrode pattern of the interposer 20 is large, even if the diameter of the filler 32a is large, the wiring is not damaged.

As a method of changing the size of the filler in the underfill 30, for example, a method in which a sealing resin 31 and a filler 32 a are mixed, a method in which the sealing resin 31 and the filler 32
b, and first, an underfill material mixed with the filler 32a is injected, and then the filler 32b
Is filled, and the interposer 20 is filled with a filler having a large size and a semiconductor chip 10 having a small filler.

FIG. 3 is a schematic sectional view showing a semiconductor device according to a third embodiment of the present invention.

As in the first and second embodiments, the semiconductor chip 10 is connected to the interposer 20 face down (pattern side down) and connected to the wiring electrodes of the interposer 20 (not shown) by the solder bumps 11. Connect.

The gap between the surface of the semiconductor chip 10 and the interposer 20 is filled with an underfill 30 for resin sealing. The underfill 30 filling the gap between the semiconductor chip 10 and the interposer 20 includes a sealing resin 3 containing no filler.
Only one is used. As the underfill 33 provided on the side surface, a sealing resin containing the filler 32 is used. It is desirable that the content of the filler in the underfill 33 that fills the periphery is high, and 90%
The degree and hardness are preferably about Si (silicon), and the shape is preferably spherical, but need not be particularly defined. There is no particular requirement for the size.

As described above, since there is no filler on the surface side of the semiconductor chip 10, the surface of the semiconductor chip 10 is not damaged.

In each of the above-described embodiments, it is preferable to use a sealing resin that does not cause shrinkage / expansion during curing of the underfill 30 that fills the gap between the semiconductor chip 10 and the interposer 20. For this purpose, it is preferable to increase the content and size of the filler, and reduce the hardness and the shape.

Since no shrinkage / expansion occurs during underfill curing, damage to the surface of the semiconductor chip 10 due to the filler can be reduced.

FIG. 4 is a schematic sectional view showing a semiconductor device according to a third embodiment of the present invention.

As shown in FIG. 4, an uneven portion 12 is formed on the surface of the semiconductor chip 10 where the wiring is provided, and an electrode is provided on the uneven portion 12. In the configuration shown in FIG. 4A, an electrode is provided on the convex portion of the uneven portion 12, and a solder bump 11 is provided thereon. The interposer 20 has an uneven portion 22 provided on the first surface, a wiring electrode corresponding to the electrode of the semiconductor chip 10 bonded to the uneven portion 22 is formed, and a first electrode is provided on the second surface. An electrode pad 21 connected to a wiring electrode on the surface by a via hole is provided. The electrode pads 21 are external terminals that are electrically connected to the outside such as a printed wiring board.

In FIG. 4B, solder bumps 11 are provided on the convex and concave portions of the concave and convex portions 12 of the semiconductor chip 10, respectively, and wiring electrodes are formed on the corresponding concave and convex portions on the interposer 20. It is trying to combine unevenness.

As shown in FIGS. 4A and 4B, the semiconductor chip 10 is connected to the interposer 20 face down (pattern surface down), and the wiring electrodes of the interposer 20 (not shown) are connected by the solder bumps 11. To connect.

The gap between the surface of the semiconductor chip 10 and the interposer 20 is filled with an underfill 30 for resin sealing. The underfill 30 is composed of a filler 32 such as silica or alumina in an epoxy resin 31.
Is filled. The size of the uneven portion is preferably about several μm with respect to the width and the depth. In particular, it is desirable that the surface of the semiconductor chip 10 has a structure in which a wiring pattern is avoided as much as possible on a flat portion.

As described above, since the uneven portion is formed on the surface of the semiconductor chip 10, the surface of the semiconductor chip is not damaged. Also, the filling property of the underfill is improved.

FIG. 5 is a schematic sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

As shown in FIG. 5, pattern wiring portions 14 are gathered at the center of the surface of the semiconductor chip 10. The solder bumps 11 are provided on the peripheral electrodes.
The interposer 20 has a first surface on which wiring electrodes corresponding to the electrodes of the semiconductor chip 10 to be bonded are formed, and a second surface with electrodes connected to the wiring electrodes on the first surface by via holes. A pad 21 is provided. The electrode pads 21 are external terminals that are electrically connected to the outside such as a printed wiring board.

As shown in FIG. 5, the pattern wiring portions 14 on the surface of the semiconductor chip 10 are collected at the center of the semiconductor chip.
It is preferable that the laser light is collected at the center of about 1/9 to 1/4 of the chip size.

As described above, by collecting the wiring patterns on the surface of the semiconductor chip 10 at the center, it is possible to prevent the wiring pattern on the surface of the semiconductor chip 10 from being damaged.

In the above-described embodiment, the semiconductor device in which the semiconductor chip is connected face-down to the interposer has been described. However, the present invention can be applied to a device in which the semiconductor chip is mounted on a printed circuit wiring board.

[0051]

As described above, according to the present invention, it is possible to provide a semiconductor device having improved reliability and the like without damaging the semiconductor chip surface when the sealing resin is cured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a schematic sectional view showing a semiconductor device according to a third embodiment of the present invention.

FIG. 4 is a schematic sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

FIG. 5 is a schematic sectional view showing a semiconductor device according to a fourth embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 10 semiconductor chip 20 interposer 30 underfill (sealing resin)

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M105 AA02 AA16 BB01 DD04 FF02 GG17 GG19 4M109 AA01 BA03 CA04 DA04 DA07 DA10 DB16 DB17 DB20 EA02 EB12 EB16 FA04 5F061 AA01 BA03 CA04 CB02 CB04 DE02 DE03 DE04

Claims (6)

[Claims] 1. A semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a gap between the surface of the semiconductor chip and the circuit board is filled with a sealing resin. The distribution density of the filler
A semiconductor device, wherein a circuit board side is densely packed and a semiconductor chip side is sparsely packed. 2. A semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a gap between the surface of the semiconductor chip and the circuit board is filled with a sealing resin. A semiconductor device wherein the size of the filler is larger on the circuit board side and smaller on the semiconductor chip side. 3. A semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a sealing resin is filled in a gap between the surface of the semiconductor chip and the circuit board. A semiconductor device, wherein the sealing resin filled in between does not contain a filler, and the sealing resin provided on the side of the semiconductor chip contains the filler. 4. In a semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a gap between the surface of the semiconductor chip and the circuit board is filled with a sealing resin, the sealing resin is formed by curing the resin. A semiconductor device characterized in that shrinkage and expansion do not sometimes occur. 5. A semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a sealing resin is filled in a gap between the surface of the semiconductor chip and the circuit board. A semiconductor device, wherein an uneven portion is formed on a surface or both surfaces. 6. A semiconductor device in which a semiconductor chip is face-down, connected to a circuit board by bumps, and a gap between the surface of the semiconductor chip and the circuit board is filled with a sealing resin. A semiconductor device, which is collected in a central part.