JP2000091604A - Polycrystalline semiconductor film, photoelectric transfer element, and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the grain boundaries and thereby increase the electron mobility by forming a conductive or semiconductive film on a substrate and then forming thereon a polycrystalline semiconductor film by laser annealing. SOLUTION: On a glass substrate 1, a chromium film 2 is formed by sputtering. Thereon, a conductive or semiconductive amorphous silicon film is formed by thermal CVD at 500 deg.C using disilane. Then, a light intensity distribution is achieved on the surface of the amorphous silicon film and excimer laser is cast to melt the amorphous silicon film. The molten amorphous silicon film is grown in the transverse direction to form a polycrystalline silicon film 3. Accordingly, improved electric characteristics such as a few grain boundaries and a large electron mobility can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polycrystalline semiconductor film having a large crystal grain size which can be used for a solar cell, a thin film transistor, and the like, a photoelectric conversion element having the semiconductor film, and a method for producing these.

[0002]

2. Description of the Related Art Amorphous, polycrystalline, and single crystal materials are used for semiconductors represented by silicon.
In various applications, attention has been paid to the advantages of polycrystalline materials in terms of semiconductor properties and manufacturing cost. The polycrystalline material is an aggregate of single crystal particles, and a grain boundary exists between the particles. These grain boundaries have a high localized level density in the forbidden band and also cause a reduction in electron mobility, which is an important factor in semiconductor properties. Therefore, in order to obtain a high-quality polycrystalline material film, it is extremely useful to increase the crystal grain size and reduce the crystal grain boundaries.

As a typical method for forming a polycrystalline material film, a solid phase growth method, a direct deposition method, a laser annealing method and the like are known, but all of the obtained semiconductor properties such as electron mobility are still unknown. Not enough. In addition, the solid phase growth method or the direct deposition method in which an amorphous film or the like is annealed and polycrystallized using an electric furnace requires a long processing time and a high-temperature process. There are problems that are restricted. In order to solve the problem of heat resistance of the substrate, the laser annealing method that melts an amorphous film by laser irradiation, anneals it, and polycrystallizes it, although the temperature of the melted film is high, This is expected because the average temperature of the entire system including the substrate and the like is low, and many attempts have been made.
For example, a method of polycrystallizing an amorphous silicon film by laser annealing using an excimer laser can be applied to a substrate lacking heat resistance because the average temperature during the processing is low. However, in many conventional attempts, the main purpose is to reduce the average temperature, there is no need to increase the crystal grain size, and the average crystal grain size obtained is about 100 nm or less. A practical method for obtaining a film has not yet been obtained.

As an attempt to form a polycrystalline silicon film having a large crystal grain size by a laser annealing method using an excimer laser, a double pulse dual beam method (Ele
ctr. Lett. , Vol. 31 (1995) p. 1
956), the bridge method (Jpn. J. Appl. Phys.
s. , Vol. 33 (1994) p. 70), repeated lateral solidification method (MRS Symp. Proc., Vo.
l. 358 (1995) p. 903) have been reported, but there are problems such as a complicated method and structure and low productivity, and the process cost is high. As a new method of forming a polycrystalline silicon film with a large crystal grain size by laser annealing using an excimer laser,
In annealing an amorphous silicon film with an excimer laser, the excimer laser is phase-modulated and a light intensity distribution is formed on the surface of the amorphous silicon film to be irradiated.
There has also been proposed a method in which molten silicon is allowed to grow in a lateral direction in a controlled manner. (Jpn. J. App
l. Phys. , Vol. 37 (1998) p. 73
1, p. L492)

[0005] In the annealing method using these lasers, it is important how to effectively utilize the energy of the laser light to be applied for crystal growth. Most of the energy of the irradiated laser light flows out toward the substrate,
If the heat outflow can be suppressed, the crystal growth can be favorably influenced. In addition, since heat flows out in the direction of the substrate, when an amorphous film formed on the substrate is polycrystallized, the film is cooled from the substrate side, and microcrystalline crystals are formed at the interface with the substrate. It is also known to generate. The microcrystals hinder a large crystal grain size.

[0006]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a polycrystalline semiconductor film having a large crystal grain size formed on a substrate, a silicon photoelectric conversion element having the film, and a method for manufacturing the same. .

[0007]

SUMMARY OF THE INVENTION The inventor of the present invention has proposed a method of forming a non-single-crystal (amorphous or microcrystalline, etc., crystal having a small grain size) polycrystalline by laser annealing on a substrate surface. The present inventors have found that the above object can be achieved by forming a film made of a specific substance on a substrate and polycrystallizing a semiconductor film on the film. That is, the polycrystalline semiconductor film, the silicon photoelectric conversion element, and the method of manufacturing the same according to the present invention have the following configurations. (1) A polycrystalline semiconductor film in which a conductive or semiconductive film is formed on a substrate, and a semiconductor film polycrystallized by laser annealing is formed on the film. (2) a low heat capacity or low thermal conductivity film is formed on the substrate, and a conductive or semiconductive film is formed on the film;
A polycrystalline semiconductor film in which a semiconductor film polycrystallized by laser annealing is formed on the film.

(3) A step of forming a conductive or semiconductive film on a substrate, a step of forming a semiconductor film on the film, and a step of polycrystallizing the semiconductor film by laser annealing. Manufacturing method of crystalline semiconductor film. (4) forming a low heat capacity or low heat conductive film on the substrate, forming a conductive or semiconductive film on the film, and forming a semiconductor on the conductive or semiconductive film. A method for producing a polycrystalline semiconductor film, comprising: forming a film; and polycrystallizing the semiconductor film by laser annealing.

(5) A conductive or semiconductive film is formed on a substrate, and a one-conductivity-type silicon semiconductor film polycrystallized by laser annealing is formed on the film, and another film is formed on the semiconductor film. A silicon photoelectric conversion element in which a conductive silicon semiconductor film is formed. (6) A low heat capacity or low thermal conductivity film is formed on the substrate, and a conductive or semiconductive film is formed on the film;
A silicon photoelectric conversion element further comprising a silicon semiconductor film of one conductivity type, which is polycrystallized by laser annealing on the film, and a silicon semiconductor film of another conductivity type formed on the semiconductor film.

(7) a step of forming a conductive or semiconductive film on the substrate, a step of forming a silicon semiconductor film on the film, and a step of annealing the semiconductor film by laser annealing to form polycrystalline silicon of one conductivity type. A method for manufacturing a silicon photoelectric conversion element, comprising: a step of forming a semiconductor film; and a step of forming a silicon semiconductor film of another conductivity type on the semiconductor film. (8) a step of forming a low heat capacity or low heat conductive film on the substrate, a step of forming a conductive or semiconductive film on the film, and a step of forming silicon on the conductive or semiconductive film. Forming a semiconductor film, forming the semiconductor film into a polycrystalline silicon semiconductor film of one conductivity type by laser annealing, and forming a silicon semiconductor film of another conductivity type on the semiconductor film; Device manufacturing method.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to the above polycrystalline semiconductor film,
It consists of a silicon photoelectric conversion element and a method of manufacturing them. First, a polycrystalline semiconductor film will be described. The substrate used for the polycrystalline semiconductor film is not particularly limited, and for example, metals such as silicon, tungsten, aluminum, and stainless steel, ceramics such as glass and sapphire, and plastics can be used. Representative examples of the semiconductor constituting the polycrystalline semiconductor film of the present invention include silicon, an alloy containing silicon as a main component, germanium, and a silicon-germanium alloy.

The polycrystalline semiconductor film of the present invention is formed on a substrate by forming either a conductive or semiconductive film, a composite film of a low heat capacity or low heat conductive film and a conductive or semiconductive film, A polycrystalline semiconductor film is formed on the film by laser annealing. The conductive or semiconductive film is generally a metal film. As the metal, chromium, nickel, niobium, tungsten, molybdenum, tantalum, titanium, iron, alloys of these metals, alloys containing these metals, alloys containing silicon, for example, silicon and at least one metal of the above metals Alloys. In particular, when the semiconductor is a silicon semiconductor, an alloy containing silicon, for example, an alloy of silicon and at least one of the above metals is preferable. When the semiconductor film is silicon, the alloy containing silicon may include an alloy formed by melting a metal film and a silicon film at least in the vicinity of an interface between the silicon film and the silicon film when the semiconductor film is melted by laser irradiation. Alternatively, a silicon alloy may be used in advance.
These alloys have lower melting points than silicon.

The reason why the formation of a conductive or semiconductive film of a metal or the like as described above makes the crystal size of the semiconductor film on the film larger is not clear, but when the semiconductor film is melted by laser irradiation, It is considered that the presence of a molten metal having a lower melting point than the semiconductor film on the lower surface of the film suppresses the generation of microcrystals in the semiconductor film. When the film of a metal or the like solidified after melting is amorphous, the effect of increasing the crystal of the semiconductor film is great. Generally, the thickness of the above-mentioned conductive or semiconductive film is suitably from 10 to 3000 nm.

Further, the conductive or semiconductive film of the metal or the like is preferably amorphous. When the film formed on the substrate is amorphous, the semiconductor film thereon is melted by laser irradiation, and when solidified, the generation of microcrystals of the semiconductor film is further suppressed, and as a result, the crystal grain size of the semiconductor film is reduced. It is thought to grow. The amorphous film only needs to be amorphous at the interface with the semiconductor, and the lower portion thereof may be crystalline. For example, a eutectic is formed at the interface with the semiconductor film in the process of forming a crystalline film on the substrate and polycrystallizing the semiconductor film by laser annealing, and the eutectic product is amorphous when quenched and solidified. It can be quality.

The film having a low heat capacity or a low thermal conductivity according to the present invention has a function of increasing the time required for the heat of the semiconductor film melted by laser irradiation to flow out, that is, the time required for solidification, to grow the crystal of the semiconductor film. Things. Since the melting by laser irradiation is instantaneous and heat transfer in an unsteady state, in order to lengthen the heat outflow time from the melted semiconductor, it is necessary to reduce the amount of heat absorbed by the semiconductor film into the underlying film. Good. Further, it is preferable that the spread of the heat once absorbed by the underlying film is small. To reduce the heat absorption, a film having a low heat capacity is preferable, and to reduce the spread of heat, a film having a low thermal conductivity is preferable. Examples of the low heat capacity film include a porous film. The porous film can also be used as a low heat conductive film. Preferred as the film having low heat conductivity and low heat capacity is a porous film of ceramics, for example, a porous film of silica or zirconia. The thickness of these films having a low heat capacity or low heat conductivity is suitably from 100 to 1000 nm.

In the present invention, the film formed on the substrate may be only the above-mentioned conductive or semiconductive film, but a film having a higher effect is obtained by forming the above-mentioned low heat capacity or low heat conductive film on the substrate. Further, the conductive or semiconductive film is formed on the film. The thickness of these films is 100 to 1000 n for films having low heat capacity or low heat conductivity.
m, the thickness of the conductive or semiconductive film is suitably 10 to 3000 nm. In these composite films, the formation of microcrystals is suppressed when the semiconductor is polycrystallized by a conductive or semiconductive film, and the spread of heat is suppressed by the low heat capacity or low heat conductive film to reduce the crystal grain size. Therefore, the effect of increasing the crystal grain size of the semiconductor increases.

The polycrystalline semiconductor film of the present invention is obtained by forming a semiconductor film polycrystallized by laser annealing on the above-mentioned film. The semiconductor film before being polycrystallized is a semiconductor film having a small crystal grain size such as amorphous or microcrystalline (these are referred to as non-single-crystal semiconductor films). This non-single-crystal semiconductor film becomes a polycrystalline semiconductor film having a large crystal grain size by laser annealing. Laser annealing has an advantage in that a portion other than the semiconductor film which is melted by irradiating a semiconductor film with a laser to melt the semiconductor film and then melt by annealing is not heated to a high temperature. The laser irradiation conditions in the laser annealing can be used without particular limitation, and known methods can be used. For example, an ArF laser, a KrF laser, a XeCl laser, or the like can be used as an excimer laser, and the energy density is generally 500 to 2000 mJ.
/ Cm ² is used.

In the present invention, however, the laser annealing is particularly effective in irradiating an excimer laser with phase modulation, forming a light intensity distribution on the surface of the substrate for each shot, and utilizing the light intensity distribution to laterally melt the semiconductor. The above-mentioned method of crystallizing in the direction to make a large crystal grain size (Jpn.
Appl. Phys. , Vol. 37 (1998) p.
731; L492). In this method, a mask in which fine step patterns are periodically arranged above the substrate is provided, and the phase is changed by irradiating an excimer laser through the mask, and the light intensity distribution on the substrate surface is generated by diffraction and interference of the generated laser light. In this method, a non-single-crystal semiconductor film is polycrystallized by periodically forming and melting a molten semiconductor in a lateral direction, so that a polycrystalline semiconductor film having a larger crystal grain size can be obtained.

The thickness of the polycrystalline semiconductor film is generally 50 to
Used in the range of 500 nm. The polycrystalline semiconductor film can be made into a p-type semiconductor or an n-type semiconductor by adding an impurity such as boron or phosphorus by a known method. Then, an n-type or p-type semiconductor is stacked on the p-type or n-type semiconductor to form a pn junction semiconductor element, which can be used for a photoelectric conversion device such as a solar cell.

Next, the invention of a method for manufacturing a polycrystalline semiconductor film will be described. In the method for producing a polycrystalline semiconductor film according to the present invention, when the semiconductor film is polycrystallized by laser annealing, the above-mentioned (1) conductive or semiconductive film is formed on the substrate in the first step, and (2) low heat capacity. Alternatively, a low thermal conductive film and a conductive or semiconductive film thereon are formed. The material, thickness and the like of each film are as described above. In the method of forming the above film, thermal CVD, plasma CVD, PVD, sputtering, vacuum deposition, or the like is used for a conductive or semiconductive film. A porous film having a low heat capacity or a low thermal conductivity, for example, a porous film of silica or zirconia is formed of SiO2.
A known method of applying a liquid material containing ZrO2 or an organic compound containing Si or Zr by a spin coating method or the like, and drying it to obtain a porous film can be used.

Next, in a second step, a semiconductor film is formed on each of the above films. The type and thickness of the semiconductor are as described above. As a method for forming a semiconductor film, a method similar to the above-described method for forming a conductive or semiconductive film can be used. With these methods, a non-single-crystal semiconductor film is obtained. Finally, the semiconductor film is polycrystallized by laser annealing. The type of laser, irradiation conditions, and a preferable laser irradiation method are as described above. Heating the substrate in advance during laser irradiation has a good effect on energy utilization of laser light and has a good effect on increasing the crystal grain size. For example, in the case of silicon, the heating temperature range is 500 ° C. or less, preferably 350 to 500 ° C.
It is. When a semiconductor film, for example, a silicon film is melted by laser irradiation, if the conductive or semiconductive film as the base layer is a metal, eutectic gold with silicon is generated at least near the interface. This alloy has a lower melting point than silicon. This alloy therefore melts when silicon melts. Note that when a non-single-crystal semiconductor film is formed, a p-type semiconductor or an n-type semiconductor can be obtained by adding a substance such as a boron source or a phosphorus source.

Next, the invention of a silicon photoelectric conversion element and a method of manufacturing the same will be described. The silicon photoelectric conversion element of the present invention basically has a pn junction in which the above-mentioned polycrystalline silicon semiconductor film is of one conductivity type and a silicon semiconductor of another conductivity type is stacked thereon. The one conductivity type is generally p-type or n-type, and the other conductivity type is n-type or p-type corresponding thereto. In the present invention, the one conductivity type or other conductivity type is i-type (intrinsic). Type). In order to make a semiconductor p-type or n-type, generally, an impurity that makes the semiconductor p-type or n-type may be added. When the semiconductor is silicon, impurities such as phosphorus and boron are added to the semiconductor.

In a method of manufacturing a photoelectric conversion element, a polycrystalline semiconductor formed first on a substrate becomes a seed thin film and is a major factor in determining characteristics. In particular, the crystal grain size of the seed thin film is the dominant factor. Therefore, the method of forming the other conductivity type silicon semiconductor to be formed thereon next is not particularly limited. For example, a known vapor phase growth method, electron beam evaporation method, or solid phase growth method can be used. In addition, a laser annealing method can be used as in the case of the polycrystalline semiconductor first formed on the substrate. By these methods, a silicon semiconductor of another conductivity type can also be a polycrystalline semiconductor having a large grain size.

In the present invention, the above-described pn junction is used as a basic structure. However, as the p-type and / or n-type films, for example, a plurality of films having different carrier concentrations or an i-type film is provided between the p-type and n-type films. Can be interposed. The method of forming the i-type film is the same as the method of forming the other conductive type film described above.
The thickness of the p-type and n-type films is in a range generally used as a photoelectric conversion element, for example, 10 to 1000 nm. The thickness of the i-type film is, for example, in the range of 0.5 to 50 μm. As described above, by increasing the thickness of the i-type film, the photoelectric conversion rate can be increased. In the photoelectric conversion element of the present invention, a conductive or semiconductive film formed on a substrate can be used as one electrode (back electrode). In addition, a conductive film having a low heat capacity or a low heat conductivity can be used as an electrode. The other electrode is provided on the semiconductor on the side opposite to the substrate (surface side). In the photoelectric conversion element of the present invention, light generally enters from the surface side. Therefore, a transparent and conductive surface electrode is used.
(Indium tin oxide) is suitable. The formation method is sputtering, vacuum deposition, or the like.

[0025]

Next, the present invention will be described in detail with reference to examples. 1 and 2 show a polycrystalline semiconductor and a silicon photoelectric conversion element according to each embodiment. However, the present invention is not limited to these examples. (Example 1) As shown in FIG. 1A, a chromium film 2 having a thickness of 25 nm was formed on a glass plate 1 by sputtering.
On top of this, a thermal CVD method of 500 ° C.
An amorphous silicon film having a thickness of 00 nm was formed and used as a sample. Next, the amorphous silicon film was converted into a polycrystalline silicon film 3 by excimer laser annealing. For excimer laser annealing, the phase of the excimer laser is modulated,
A method of forming a light intensity distribution on the surface of an amorphous silicon film and irradiating the same to melt the silicon film and grow the melted silicon in the lateral direction (Jpn. J. Appl. P
hys. , Vol. 37 (1998) p. 731;
L492) was used under the following conditions.

Using a KrF excimer laser, a step pattern having a line shift of 53 ° and a line width and a line interval of 5 μm was formed on a quartz phase shift mask. The distance between the amorphous silicon film and the phase shift mask is set to 0.
A sample set at 4 mm and kept at 500 ° C. under vacuum conditions was irradiated with a KrF excimer laser having an energy density of 900 mJ / cm ² by one shot from above the phase shift mask to polycrystallize the amorphous silicon film. Observation of the sample after excimer laser annealing with a surface SEM revealed that single-crystal silicon particles having a diameter of about 5 μm were formed.
When the surface layer of the chromium film was examined by AFM and AES, it was found to be an alloy of silicon and chromium.

(Embodiment 2) As shown in FIG.
On a recon wafer 1 ', polysiloxane is the main component
Triphenylsilanol for SOG material (Tokyo Ohka)
1% by weight of the mixed solution, and spin coating
A porous silicon oxide film 4 is formed to a thickness of 500 nm.
Oxidation by plasma CVD using toxic silane and oxygen
A silicon buffer film 5 was formed to a thickness of 50 nm. This buff
Chromium film with a thickness of 25 nm on the film 5 by sputtering
2 was formed. On top of that, heat at 500 ° C. as in Example 1.
200nm thick amorphous silicon by CVD method
The film 3 was formed and used as a sample. Hereinafter, in the same manner as in Example 1,
The morphous silicon film was used as the polycrystalline silicon film 3. D
Observe the sample after Kisima laser annealing with surface SEM.
As a result, single crystal silicon grains with a diameter of about 6 μm
Was.

Comparative Example 1 The same operation as in Example 1 was performed, except that a chromium film was not formed on a silicon wafer and only an amorphous silicon film having a thickness of 200 nm was formed by a thermal CVD method at 500 ° C. to obtain a sample. Then, the amorphous silicon film was polycrystallized. When the sample after excimer laser annealing was observed with a surface SEM, the diameter was about 3.5 μm.
Was formed.

Example 3 As shown in FIG. 2A, a chromium film 2 having a thickness of 25 nm was formed on a glass substrate 1 by a sputtering method, and disilane to which a small amount of phosphine was added was used. An amorphous silicon film having a thickness of 200 nm was formed by a thermal CVD method at 500 ° C. to obtain a sample. Next, the amorphous silicon film was polycrystallized by excimer laser annealing in the same manner as in Example 1 to obtain an n-type polycrystalline silicon film 3 '. In this n-type polycrystalline silicon film, single-crystal silicon grains having a diameter of about 5 μm were formed. Also,
When the surface layer of the chromium film was examined by AFM and AES, it was found to be an alloy layer of silicon and chromium. Next, on the n-type polycrystalline silicon film 3 ', silicon is electron-beam evaporated to form an i-type polycrystalline silicon film 6 having a thickness of 5 μm,
Subsequently, at the time of electron beam evaporation, boron was added to silicon to form a 20 nm p-type polycrystalline silicon film 7 to obtain a photoelectric conversion element. In electron beam evaporation, the substrate temperature was heated to 400 ° C. ITO was deposited on the p-type polycrystalline silicon film 7 to form one electrode 8, and the chromium film 2 was used as the other electrode to form a solar cell. The conversion efficiency was about 7% when the characteristics of the solar cell were measured by using an AMI solar simulator while light was incident from the ITO side.

Example 4 As shown in FIG. 2B, a porous silicon oxide film 4 was formed on a glass substrate 1 by spin coating using the mixed solution of SOG of Example 2 and triphenylsilanol. Was formed to a thickness of 500 nm, and a silicon oxide buffer film 5 was formed to a thickness of 50 nm by a CVD method using tetraethoxysilane and oxygen. A chromium film 2 having a thickness of 25 nm was formed on the buffer film 5 by a sputtering method. A 200-nm-thick amorphous silicon film was formed thereon by a thermal CVD method at 500 ° C. using disilane to which a small amount of phosphine was added, and used as a sample. Next, the amorphous silicon film was polycrystallized by excimer laser annealing in the same manner as in Example 1 to form an n-type polycrystalline silicon film 3 '. Single-crystal silicon grains having a diameter of about 6 μm were formed in this polycrystalline silicon film. Next, an i-type polycrystalline silicon film 6 having a thickness of 5 μm and a p-type silicon film 7 having a thickness of 20 nm are formed on the n-type polycrystalline silicon film 3 ′, as in the third embodiment.
To form a photoelectric conversion element, on which an ITO electrode 8 having a thickness of 100 nm was formed in the same manner as in Example 3, and a chromium film 2 was formed.
Was used as a solar cell as the other electrode. When the characteristics of this solar cell were measured in the same manner as in Example 3, the conversion efficiency was about 8
%Met.

Comparative Example 2 The same operation as in Example 3 was carried out except that a chromium film was not formed on the glass substrate and only an amorphous silicon film having a thickness of 200 nm was directly formed by thermal CVD at 500 ° C. Battery. When the characteristics of this solar cell were measured, the conversion efficiency was about 5%.

[0032]

The polycrystalline semiconductor of the present invention is a semiconductor obtained by polycrystallizing a specific film on a substrate by a laser annealing method and having a large crystal grain size. Therefore, it has excellent electrical characteristics such as a small number of crystal grain boundaries and high electron mobility.
In addition, a silicon photoelectric conversion element including a polycrystalline silicon semiconductor can obtain high photoelectric conversion efficiency.

[Brief description of the drawings]

FIG. 1A is a schematic cross-sectional view of a polycrystalline semiconductor according to one embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view of a polycrystalline semiconductor according to another embodiment of the present invention.

2A is a schematic cross-sectional view of a silicon photoelectric conversion device according to one embodiment of the present invention, and FIG. 2B is a schematic cross-sectional view of a silicon photoelectric conversion device according to another embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 glass substrate 1 'silicon substrate 2 chromium film 3 semiconductor film 3' n-type polycrystalline silicon film 4 porous silicon oxide film 5 silicon oxide buffer film 6 i-type polycrystalline silicon film 7 p-type polycrystalline silicon film 8 ITO electrode

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[Procedure amendment]

[Submission Date] September 16, 1998 (1998.9.1)
6)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claim 8

[Correction method] Change

[Correction contents]

Claims (23)

[Claims] 1. A polycrystalline semiconductor film in which a conductive or semiconductive film is formed on a substrate, and a semiconductor film polycrystallized by laser annealing is formed on the film. 2. A semiconductor having a low heat capacity or low heat conductivity film formed on a substrate, a conductive or semiconductive film formed on the film, and a polycrystallized film formed by laser annealing on the film. A polycrystalline semiconductor film formed with a film. 3. The polycrystalline semiconductor film according to claim 1, wherein the semiconductor film is silicon or a film containing silicon as a main component. 4. The polycrystalline semiconductor film according to claim 1, wherein the conductive or semiconductive film is an amorphous film. 5. The polycrystalline semiconductor film according to claim 1, wherein the conductive or semiconductive film is a metal film. 6. The polycrystalline semiconductor film according to claim 5, wherein the metal film is a film of an alloy containing silicon. 7. The metal film is made of chromium, nickel, niobium,
6. The polycrystalline semiconductor film according to claim 5, which is a metal film selected from tungsten, molybdenum, tantalum, titanium, and iron, a film of an alloy containing these metals, or a film of an alloy of at least one of these metals and silicon. 8. The polycrystalline semiconductor film according to claim 27, wherein the low heat capacity or low heat conductivity film is a porous film. 9. The polycrystalline semiconductor film according to claim 8, wherein the porous film is a silica or zirconia porous film. 10. A method in which laser annealing irradiates an excimer laser through a mask in which minute step patterns are periodically arranged, wherein a periodic pattern is formed on a substrate surface by diffraction and interference of laser light caused by a phase change. 10. The polycrystalline semiconductor film according to claim 1, which is a method for forming a light intensity distribution. 11. A step of forming a conductive or semiconductive film on a substrate, a step of forming a semiconductor film on the film,
A method for producing a polycrystalline semiconductor film, comprising a step of polycrystallizing the semiconductor film by laser annealing. 12. A step of forming a low heat capacity or low thermal conductivity film on a substrate, a step of forming a conductive or semiconductive film on the film, and a step of forming a conductive or semiconductive film on the film. Forming a semiconductor film on the substrate, and polycrystallizing the semiconductor film by laser annealing. 13. A conductive or semiconductive film is formed on a substrate, a one-conductivity-type silicon semiconductor film polycrystallized by laser annealing is formed on the film, and another conductive film is formed on the semiconductor film. Photoelectric conversion element formed with a silicon semiconductor film of a mold type. 14. A low heat capacity or low heat conductivity film is formed on a substrate, a conductive or semiconductive film is formed on the film, and the film is polycrystallized by laser annealing on the film. A silicon photoelectric conversion element in which a conductive silicon semiconductor film is formed, and a silicon semiconductor film of another conductivity type is formed on the semiconductor film. 15. The silicon photoelectric conversion element according to claim 13, wherein the conductive or semiconductive film is an amorphous film. 16. The silicon photoelectric conversion element according to claim 13, wherein the conductive or semiconductive film is a metal film. 17. The silicon photoelectric conversion element according to claim 16, wherein the metal film is an alloy film containing silicon. 18. A film made of a metal selected from chromium, nickel, niobium, tungsten, molybdenum, tantalum, titanium and iron, a film of an alloy containing these metals, or a film of at least one of these metals and silicon 17. The silicon photoelectric conversion element according to claim 16, which is a film of an alloy. 19. The silicon photoelectric conversion element according to claim 14, wherein the low heat capacity or low heat conductivity film is a porous film. 20. The silicon photoelectric conversion device according to claim 19, wherein the porous film is a silica or zirconia porous film. 21. A method in which laser annealing irradiates an excimer laser through a mask in which minute step patterns are periodically arranged, wherein the laser surface is periodically irradiated with diffraction and interference of a laser beam caused by a phase change. 21. A method for forming a light intensity distribution.
The silicon photoelectric conversion element according to claim 1. 22. A step of forming a conductive or semiconductive film on a substrate; a step of forming a silicon semiconductor film on the film; and a one-conductivity type polycrystalline silicon semiconductor by laser annealing the semiconductor film. A method for manufacturing a silicon photoelectric conversion element, comprising: a step of forming a film; and a step of forming a silicon semiconductor film of another conductivity type on the semiconductor film. 23. A step of forming a low heat capacity or low heat conductive film on a substrate, a step of forming a conductive or semiconductive film on the film, and a step of forming a conductive or semiconductive film on the film. Forming a silicon semiconductor film on a silicon film, forming the semiconductor film into a one-conductivity-type polycrystalline silicon semiconductor film by laser annealing, and forming a silicon semiconductor film of another conductivity type on the semiconductor film. Manufacturing method of photoelectric conversion element.