JP2000068068A - Organic el and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic EL which is driven by lower voltage for realizing low-power consumption. SOLUTION: A positive electrode 4 of the prescribed pattern by a transparent conductive film 3 is formed on a glass substrate 2. Hole injecting CuPc organic films 5a are formed on the positive electrode 4. The CuPc organic films 5a are exposed to NO2 atmosphere which is an electron accepting gas after the formation of the films, and NO2 is included in the films 5a. Thereby, the conductivity of the CuPc organic films 5a rises to stably improve the efficiency of the hole injection. An α-NPD organic film 5b and an Alq3 organic film 5c are formed on the CuPc organic films 5a in this order, to form an organic layer 5, then a negative electrode 6 is formed on the Alq3 organic film 5c. The peripheral part of the glass substrate 2 is firmly fixed with a container so as to protect the positive electrode 4, the organic layer 5 and the negative electrode 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic EL composed of a thin film of the organic EL compound utilizing electroluminescence (hereinafter referred to as EL) of an organic compound material which emits light by injection and recombination of electrons and holes. And its manufacturing method.

[0002]

2. Description of the Related Art An organic EL has a laminated structure in which a thin film containing a fluorescent organic compound is sandwiched between a cathode and an anode, and excitons are injected into the thin film by injecting electrons and holes and recombining them. (Exciton) is generated, and the display element performs display by utilizing light emission (fluorescence / phosphorescence) when the exciton is deactivated.

FIGS. 5A to 5G are side sectional views showing a structure and a manufacturing process of a conventional organic EL of this kind.

[0004] The organic EL 11 is formed on an insulating and transparent glass substrate 12 shown in FIG.
A transparent conductive film 13 made of (Indium Tin Oxide) is formed. The transparent conductive film 13 is formed on the glass substrate 12 and is patterned into a predetermined pattern shape as shown in FIG.

On the anode 14, an organic layer 15 of a thin film of an organic compound material is laminated. The organic layer 15 is shown in FIG.
(C) a copper phthalocyanine (CuPc) organic film 15a as a hole injection layer formed on the anode 14 shown in FIG.
An α-NPD (Bis (N- (1)) as a hole transport layer formed on the CuPc organic film 15a shown in FIG.
-Naphtyl-N-phneyl) benzidine) Organic film 15b
And a tris (8-quinolinolato) aluminum (Alq ₃ ) organic film 15c as a light emitting layer and an electron transport layer formed on the α-NPD organic film 15b shown in FIG. Is formed.

As shown in FIG. 5F, the organic layer 15 (A
On the lq ₃ organic film 15c), a cathode 16 made of a metal thin film such as Al-Li is formed.

[0007] As shown in FIG.
A container 17 as a sealing member is fixed to an outer peripheral portion of the container 17 with an adhesive in a dry atmosphere using an inert gas (eg, dry nitrogen) or dry air from which water is removed as much as possible.

In the organic EL 11 configured as described above, a voltage is applied between the anode 14 and the cathode 16 to flow a constant current. As a result, holes are injected from the anode 14 and electrons are injected from the cathode 16 into the organic layer 15. Then, the injected electrons and holes recombine to generate excitons, and a desired display is performed by emission of light when the excitons are deactivated. Light emission at that time is observed from the glass substrate 12 side through the anode 14 made of the transparent conductive film 13.

[0009]

Incidentally, the organic EL 11 configured as described above has a CuPc organic film 15a as a hole injection layer of the organic layer 15. This C
As shown in FIGS. 6 and 7, the uPc organic film 15a has characteristics in which voltage-current characteristics and voltage-luminance characteristics differ depending on the film thickness. That is, when light is emitted at a constant current or a constant luminance, the drive voltage can be reduced as the thickness of the CuPc organic film is reduced, and conversely, the drive voltage is increased as the CuPc organic film is increased. I have.

FIGS. 6 and 7 adopt the structure of the organic EL 11 shown in FIG. 5, and the thickness of the CuPc organic film 15a is 20 nm.
And the respective characteristics when a film is formed at 60 nm. As is clear from these figures, the case where the thickness of the CuPc organic film 15a is formed to be 20 nm is 60 nm.
It can be seen that the driving voltage can be made lower than in the case where the film is formed at m.

Specifically, when viewed in terms of current, 15 mA / c
As shown in FIG. 6, in order to flow an electric current of m ² , the CuPc organic film 15a requires a drive voltage of about 5.8 V at a film thickness of 20 nm, while a drive voltage of about 5.8 V is required at 60 nm.
Drive voltage is required.

When viewed in terms of luminance, 400 cd / m ²
As shown in FIG. 7, a driving voltage of about 5.8 V is required when the thickness of the CuPc organic film 15 a is 20 nm, while a driving voltage of about 6.7 V is higher at 60 nm, as shown in FIG. Need.

Therefore, the organic EL 1 having the configuration shown in FIG.
In order to obtain a higher luminance in No. 1, there is a problem that the driving voltage must be increased, and more power is consumed.

In the organic EL 11 having the structure shown in FIG. 5, the transparent conductive film 13 serving as a base of the CuPc organic film 15a is used.
The surface of the (anode 14) is an uneven surface of several tens of nm including a projection. Then, the transparent conductive film 13 having the uneven surface
When an organic layer 15 and a metal thin film forming the cathode 16 are sequentially laminated and formed on the substrate, the anode 14 and the cathode 16 are electrically short-circuited due to spike-like projections of the transparent conductive film 13 and insulation failure occurs. Was likely to be caused.

In order to solve the above problem, it is conceivable that the organic layer 15 is formed to be thick to achieve smoothness. In particular, when the CuPc organic film 15a formed on the transparent conductive film 13 is made thick, 6 and 7 thus shifted to the higher voltage side. As a result, in order to emit light with the same brightness as that before the CuPc organic film 15a is made thicker, a higher driving voltage is required, which causes a problem that power consumption increases.

By the way, CuP constituting a part of the organic layer
The c film shows p-type conduction.
_When a strong electron-accepting (oxidizing) gas such as ₂ adsorbs,
It is known that gas molecules have the property of receiving π electrons of a cyclic atomic group of a CuPc film, generating holes in the film, and increasing the conductivity of the film.

Accordingly, an object of the present invention is to provide an organic EL which can be driven at a lower voltage by reducing the power consumption by utilizing the properties of the CuPc film described above and a method of manufacturing the same.

[0018]

In order to achieve the above-mentioned object, according to the present invention, an organic layer including a hole-injecting CuPc organic film between a pair of electrodes, at least one of which is a transparent conductive film, is provided. In the laminated organic EL, the C
The uPc organic film contains an electron-accepting gas.

According to a second aspect of the present invention, in the organic EL device of the first aspect, the electron accepting gas is made of NO ₂ .

According to a third aspect of the present invention, in the organic EL of the first aspect, the CuPc organic film has a thickness of 1 nm to 200 n.
m.

According to a fourth aspect of the present invention, there is provided a method according to the present invention, wherein at least one electrode is formed of a transparent conductive film and has a hole injecting Cu
The method of manufacturing an organic EL in which an organic layer including a Pc organic film is stacked, comprising a step of rinsing the surface of the CuPc organic film with an electron-accepting gas after the CuPc organic film is formed. Features.

According to a fifth aspect of the present invention, there is provided a method of forming a hole-injecting Cu between a pair of electrodes, at least one of which is made of a transparent conductive film.
In a method for manufacturing an organic EL in which an organic layer including a Pc organic film is laminated, a step of forming the CuPc organic film into a plurality of layers, and an electron-accepting process each time the CuPc organic film is formed. Rinsing the surface with said gas.

[0023]

FIG. 1 is a partially enlarged side sectional view showing a first embodiment of an organic EL according to the present invention, and FIG. 2 is a side sectional view showing a manufacturing process of the organic EL shown in FIG.

As shown in FIG. 1, the organic EL 1A (1) according to the first embodiment is based on a rectangular glass substrate 2 having insulation and transparency. On the glass substrate 2, a transparent conductive film 3 such as ITO is formed. The transparent conductive film 3 is made of, for example, PVD such as a vacuum evaporation method and a sputtering method.
The film is formed to a thickness of about 100 nm by a (Physical Vapor Deposition) method. The transparent conductive film 3 is further patterned into a predetermined pattern by etching with a photoresist pattern to form an anode 4. Part of the anode 4 is drawn out to the end of the glass substrate 2 and connected to a drive circuit (driver IC) (not shown).

On the anode 4, an organic layer 5 including a light emitting layer made of a thin film of an organic compound material is laminated. Organic layer 5
Is formed by a PVD method such as a molecular beam evaporation method and a resistance heating method.

The organic layer 5 in FIG. 1 is formed of a CuPc organic film as a hole-injecting organic film formed on the anode 4 with a thickness of several nm to several hundred nm (for example, 1 nm to 200 nm, preferably 60 nm to 100 nm). Film 5a and CuP
an α-NPD organic film 5b as a hole transporting organic film formed with a thickness of several tens nm on the organic film 5a;
An Alq ₃ organic film 5c as a light emitting layer and an electron transporting organic film formed on the NPD organic film 5b with a thickness of several tens nm.
In a three-layer structure.

On the organic layer 5, a cathode 6 made of a metal thin film is provided.
Are formed. The cathode 6 is made of, for example, Al, Li, M
metal material such as g, Ag, In, etc. having a small work function or A
It is made of an alloy having a small work function such as l-Li and Mg-Ag. The cathode 6 is made of P, such as a molecular beam deposition method or a resistance heating method.
The film is formed to a thickness of, for example, several tens nm to several hundreds nm (preferably, 50 nm to 200 nm) by the VD method. Part of the cathode 6 is drawn out to the end of the glass substrate 2 and connected to a drive circuit (not shown).

A lid-like container 7 as a sealing member is provided on the outer peripheral portion of the glass substrate 2 with an adhesive (for example, ultraviolet curing) in a dry atmosphere with an inert gas (eg, dry nitrogen) or dry air from which water is removed as much as possible. Adhesive). Thereby, both the electrodes 4 and 6 and the organic layer 5 are protected, and a high-definition organic EL device is realized.

In the organic EL 1A configured as described above, a drive voltage is applied between the anode 4 and the cathode 6 from a drive circuit (not shown) to flow a constant current. As a result, holes are injected from the anode 4 and electrons are injected from the cathode 6 into the organic layer 5. Then, the injected holes and electrons are recombined in the organic layer 5 to generate excitons, and a desired display is performed by emission of light when the excitons are deactivated. Light emission at that time is observed from outside the glass substrate 2 via the anode 4 made of a transparent conductive film.

Next, a method of manufacturing the organic EL 1A according to the above configuration will be described with reference to FIG. First, if the internal pressure is 10
^The glass substrate 2 is set in a chamber (not shown) set to ^-5 Pa or less, and the transparent conductive film 3
Is formed to a thickness of about 150 nm (FIG. 2A). Subsequently, the transparent conductive film 3 is etched by a photoresist pattern to form an anode 4 having a predetermined pattern shape (FIG. 2B). The transparent conductive film 3 can be formed by a normal sputtering method. However, in the case of the film formation by the sputtering method, the transparent conductive film 3 is polycrystallized and flake-like irregularities caused by crystal grain boundaries are formed on the surface. It is preferable that the film is formed in a crystalline state. For example, if the transparent conductive film 3 is formed of an amorphous transparent conductive film made of IDIXO (trade name: Idemitsu Indium X-Metal Oxide, manufactured by Idemitsu Kosan Co., Ltd.), dense and excellent surface smoothness can be obtained. A film can be formed.

The amorphous transparent conductive film (IDIX)
At the time of forming the transparent conductive film 3 of O), mask evaporation may be performed in order to perform desired patterning. In some cases, after the transparent conductive film 3 is formed, the transparent conductive film 3 may be patterned using a normal photolithography method.

After the anode 4 is formed by the transparent conductive film 3, a CuPc organic film 5a is
0 nm (for example, 1 nm to 200 nm, preferably 60 n
m to 100 nm) (FIG. 2C). For example, in the case of forming the CuPc organic film 5a having a thickness of 20 nm or more, the film is formed by a PVD method such as a molecular beam evaporation method or a resistance heating method in a plurality of times with a film thickness of 20 nm each time. .

When the CuPc organic film 5a having a desired film thickness is formed, a first gas rinsing process of the CuPc organic film 5a is performed in a chamber in which the glass substrate 2 is set.
Aging is performed by introducing _two gases (FIG. 2D). Specifically, in the first gas rinsing process, N ₂ gas is supplied at a flow rate of, for example, 100 ml / mn and the pressure in the chamber is 10 to 1
It is introduced until the pressure becomes 00 Pa and left for 5 minutes. This first
Not to introduce an electron-accepting strong NO ₂ gas Gasurinsu process, when suddenly introducing the NO ₂ gas into the chamber, there is a possibility to put the explosion react with residual gas in the chamber.

Following the first gas rinsing process, C
As a _second gas rinsing process of the uPc film 5a, NO ₂ gas is introduced into the chamber to replace N ₂ gas with NO ₂ gas (FIG. 2E). Specifically, in the _second gas rinsing process, NO ₂ gas is introduced at a flow rate of, for example, 100 ml / mn until the pressure in the chamber becomes 10 to 100 Pa, and left for 10 minutes. Thereby, N in the chamber is
Immediately after the film formation, the O ₂ gas is brought into contact with the CuPc organic film 5a without being exposed to the atmosphere. Then, the NO ₂ gas is sufficiently adsorbed on the surface of the CuPc organic film 5a, and the NO ₂ gas penetrates into the film.

After the second gas rinsing process, the inside of the chamber is evacuated again, and the pressure in the chamber is reduced to 10 ^-5.
In the state where the pressure is set to Pa or less, α-
PVD of the NPD organic film 5b by molecular beam evaporation, resistance heating, etc.
A film is formed by the method D (FIG. 2F). Then, α-NP
An Alq ₃ organic film 5c is formed on the D organic film 5b (FIG. 2).
(G)) Further, a metal thin film (for example, an Al—Li film) serving as the cathode 6 is formed on the Alq ₃ organic film 5c by a PVD method (FIG. 2H).

Thereafter, the container 7 as a sealing member is fixed to the outer peripheral portion of the glass substrate 2 with an ultraviolet-curing adhesive in an atmosphere of an inert gas (eg, dry nitrogen) or dry air from which water has been removed as much as possible (FIG. 2). (I)).
Thereby, the inner anode 4, the organic layer 5, and the cathode 6 are protected, and the organic EL 1A is completed.

FIG. 3 shows a second example of the organic EL device according to the present invention.
FIG. 4 is a view showing an embodiment, and FIG. 4 is a view showing a manufacturing process of the organic EL in FIG. Note that the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.

The organic EL 1B according to the second embodiment includes an anode 4
CuPc organic film 5a formed on the substrate is formed by a molecular beam evaporation method,
The film is formed in a plurality of layers by a PVD method such as a resistance heating method, and the surface of each layer is sufficiently adsorbed with NO ₂ gas every time each layer is formed. Other configurations are the same as those of the organic EL 1A of the first embodiment.

In manufacturing the organic EL1B,
The steps up to the formation of the first layer of the CuPc organic film 5a are performed in the same steps as in the case of manufacturing the organic EL 1A of the above-described first embodiment (FIGS. 4A to 4C).

After the first layer of the CuPc organic film 5a is formed on the anode 4, as a first gas rinsing process, aging is performed by introducing an N ₂ gas into a chamber in which the glass substrate 2 is set (FIG. 4 (d)). Specifically, in the first gas rinsing process, N ₂ gas is supplied at, for example, 100 ml / mn.
Is introduced until the pressure in the chamber becomes 10 to 100 Pa, and left for 5 minutes.

Following the first gas rinsing process, as a _second gas rinsing process, NO ₂ gas is introduced into the chamber to replace N ₂ gas with NO ₂ gas (FIG. 4).
(E)). Specifically, in the second gas rinsing process, N
O ₂ gas is introduced at a flow rate of, for example, 100 ml / mn until the pressure in the chamber becomes 10 to 100 Pa, and left for 10 minutes. As a result, the first CuPc organic film 5a is exposed to the NO ₂ gas in the chamber immediately after film formation without being exposed to the atmosphere.
Contact the layer. Then, the NO ₂ gas is sufficiently adsorbed on the surface of the CuPc organic film 5a, and the NO ₂ gas penetrates into the film.

When the second gas rinsing process is completed, Cu
A second layer of the Pc organic film 5a is formed on the first layer. For the second and subsequent layers of the CuPc organic film 5a, the second gas rinsing process is performed every time each layer is formed until the CuPc organic film 5 is formed to a desired thickness (FIG. 4). (F)).

That is, the desired CuPc organic film 5a
Is a film thickness of M (nm) (where M> 0 nm), and a film thickness formed at one time is H (nm). The film is formed to satisfy. Specifically, the desired thickness of the CuPc organic film is 60
If the film thickness formed at one time is 20 nm, the CuPc organic film is formed in three times. Then, the second gas rinsing process is performed each time the film formation is completed three times.

After the CuPc organic film 5a having a desired film thickness is formed and the second gas rinsing process is completed for each layer,
The chamber is evacuated again, and the pressure in the chamber is reduced to 1
An α-NPD organic film 5b is formed on the CuPc organic film 5a by a PVD method such as a molecular beam evaporation method and a resistance heating method under the condition of 0 ⁻⁵ Pa or less (FIG. 4G). Then, α-
An Alq ₃ organic film 5c is formed on the NPD organic film 5b (FIG. 4 (h)), and a cathode 6 is further formed on the Alq ₃ organic film 5c.
A metal thin film (for example, an Al—Li film) is formed by a PVD method (FIG. 4I).

Thereafter, in an atmosphere of an inert gas (for example, dry nitrogen) or dry air from which water has been removed as much as possible, the container 7 as a sealing member is fixed to the outer peripheral portion of the glass substrate 2 with an ultraviolet curing adhesive (FIG. 4). (J)).
Thereby, the internal anode 4, organic layer 5 and cathode 6 are protected, and the organic EL 1B is completed.

As described above, the organic EL of each of the above embodiments is
According to 1 (1A, 1B), since the CuPc organic film 5a constituting a part of the organic layer 5 contains NO ₂ as a gas having a strong electron accepting (oxidizing) property, the CuPc organic film 5a
, The hole injection efficiency can be stably improved. Thereby, the threshold value of the current in the voltage-current characteristics of FIG. 6 can be shifted to the lower voltage side. As a result, even when the organic EL 1 is dynamically driven, a voltage for obtaining a desired luminance can be set to a low voltage, and a driving circuit (driver IC)
Cost can be reduced. And organic EL
1 can be driven at a low voltage, so that the life characteristics during lighting can be improved.

Here, the organic EL 1 (1A, 1B) of each embodiment according to the thickness of the CuPc organic film and the conventional organic EL are used.
The voltage-current characteristics and the voltage-luminance characteristics at L are shown in FIGS.

A comparison of each characteristic of the organic EL of this embodiment with that of the conventional organic EL based on FIGS. 6 and 7 shows that:
First, when applying a current of 15 mA / cm ² to the element (organic EL), a voltage of 5.6 V is required in the organic EL 1A of the first embodiment in which the thickness of the CuPc organic film 5a is 60 nm. In the organic EL 1A of the first embodiment in which the thickness of the CuPc organic film 5a is 20 nm, a voltage of 4.7 V is required. In the organic EL 1B of the second embodiment in which the thickness of the CuPc organic film 5a is 20 nm, a voltage of 4.1 V is required.

On the other hand, the thickness of the CuPc film is 20 nm.
As shown in FIG. 6, the conventional organic EL of 5.8 is higher than the organic ELs 1A and 1B of the above embodiments by 5.8.
A driving voltage of about V is required, and a conventional organic EL in which the thickness of the CuPc organic film is 60 nm requires an even higher driving voltage of about 6.7 V.

Next, to obtain a luminance of 400 cd / m ² , a voltage of 5.6 V is required for the organic EL of the first embodiment in which the thickness of the CuPc organic film is 60 nm. CuP
The organic EL according to the first embodiment in which the thickness of the organic film is 20 nm
Requires a voltage of 5V. In the organic EL according to the second embodiment in which the thickness of the CuPc organic film is 20 nm, the voltage is 3.7 V.
Voltage is required.

On the other hand, the thickness of the CuPc film is 20 nm.
As is apparent from FIG. 7, the conventional organic EL requires a voltage of 5.8 V higher than the organic EL of each of the above embodiments, and the conventional organic EL having a CuPc organic film thickness of 60 nm. Require a higher voltage of 6.7V.

As described above, when compared at the same current or the same luminance, according to the organic ELs 1A and 1B of the present embodiment, the voltage-current characteristics of FIG. 6 and the voltage-luminance characteristics of FIG. It can be seen that the voltage can be shifted to a lower voltage side.

Therefore, when the thickness of the CuPc film is the same, according to the organic ELs 1A and 1B of the respective embodiments, it is possible to drive at a voltage lower than that of the conventional organic EL, thereby reducing power consumption. be able to.

In particular, if the thickness and thickness of the CuPc organic film 5a are reduced by adopting the configuration and method of the second embodiment, the current threshold in the voltage-current characteristics of FIG. 6 is further shifted to a lower voltage side. Can be done. However, when the underlayer of the CuPc organic film 5a is a transparent conductive film, the CuPc organic film 5
When the thickness of “a” is reduced, it is affected by the uneven surface of the transparent conductive film 3. Therefore, the transparent conductive film 3 needs to be smoothed. As this smoothing process, a transparent conductive film 3 such as ITO is used.
It is conceivable that the surface is polished and smoothed after the film formation, or an amorphous transparent conductive film 3 such as IDIXO is formed.

According to the organic EL 1B of the second embodiment,
CuPc organic film 5a is NO for each layer _TwoMany adsorbed gas
Because of the layer structure, the upper and lower layers of the CuPc film 5a are formed.
The concentration of gas molecules in the CuPc film 5a becomes uniform.
NO in the film thickness direction_TwoGas molecule concentration (See FIGS. 1 and 3
(Distribution of points of the CuPc organic film 5a),
It is possible to eliminate the variation in the concentration of water molecules.

[0056] In the manufacturing method of the above described embodiments has been described as performing a second Gasurinsu processing of the first Gasurinsu processing and NO ₂ gas of the N ₂ gas in separate steps, for example, N _2: The gas rinsing process may be performed using a mixed gas having a ratio of NO ₂ = 98: 2. Thereby, the first gas rinsing process of the N ₂ gas and the _second gas rinsing process of the NO ₂ gas of the CuPc film
It can be realized in two steps.

The organic layer 5 in each embodiment is not limited to the three-layer structure shown in the drawings, but may be any structure including a CuPc organic film 5a as a hole injecting organic film and a light emitting layer.

In each embodiment, the anode 4 made of the transparent conductive film 3 and the cathode 6 made of a metal thin film may be reversed. In this case, CuPc constituting the organic layer 5
Organic film 5a, α-NPD organic film 5b, Alq ₃ organic film 5
c is also reversed and stacked. At this time, the glass substrate 2 to be used does not necessarily need to have transparency, and a colored substrate having an insulating property can be used.

A pair of electrodes (anode 4 and cathode 6)
At least one of them may be formed of a conductive material having transparency. At this time, when both electrodes are made of a transparent conductive material, one electrode (anode 4) is made of a transparent conductive material (ITO) having a large work function and the other electrode (cathode 6) is used. A conductive material having a small work function and having transparency is used.

[0060]

As is apparent from the above description, according to the organic EL of the present invention, the CuPc organic film constituting a part of the organic layer contains an electron accepting gas (NO ₂ ). , The conductivity of the CuPc organic film is increased, and the hole injection efficiency can be stably improved.

Thus, the threshold value of the current in the voltage-current characteristics can be shifted to a lower voltage side. As a result, even when the organic EL is dynamically driven,
A voltage for obtaining a desired luminance can be set to a low voltage, so that the cost of the driving circuit can be reduced. Moreover, since the organic EL can be driven at a low voltage,
The life characteristics during lighting can also be improved.

In particular, a CuPc organic film is formed in a plurality of layers, and each time each layer is formed, an electron-accepting gas (NO ₂ )
By rinsing the surface with CuPc, the concentration of gas molecules in the upper and lower layers of the CuPc film becomes uniform, and CuPc
Variations in gas molecule concentration in the film thickness direction can be eliminated.

[Brief description of the drawings]

FIG. 1 is a partial side sectional view showing a first embodiment of an organic EL according to the present invention.

FIGS. 2A to 2I are side sectional views showing a manufacturing process of the organic EL device according to the first embodiment.

FIG. 3 is a partial side sectional view showing a second embodiment of the organic EL according to the present invention.

FIGS. 4A to 4J are side sectional views showing manufacturing steps of an organic EL device according to a second embodiment.

5 (a) to 5 (g) are side sectional views showing a configuration and a manufacturing process of a conventional organic EL.

FIG. 6 shows the organic E of the present invention according to the thickness of the CuPc organic film.
L and voltage-current characteristics of a conventional organic EL

FIG. 7 shows the organic E of the present invention according to the thickness of the CuPc organic film.
L and voltage-luminance characteristics of a conventional organic EL

[Explanation of symbols]

1 (1A, 1B): Organic EL, 3: Transparent conductive film, 4: Anode, 5: Organic layer, 5a: CuPc organic film, 6: Cathode.

Claims (5)

[Claims] 1. An organic EL in which an organic layer including a hole-injectable CuPc organic film is laminated between a pair of electrodes, at least one of which is a transparent conductive film, wherein the CuPc organic film contains an electron-accepting gas. Organic EL characterized by containing. _2. The organic EL according to claim 1, wherein the electron-accepting gas comprises NO ₂ . 3. The CuPc organic film has a thickness of 1 nm to 2 nm.
The organic EL according to claim 1, which has a thickness of 00 nm. 4. A method for manufacturing an organic EL in which an organic layer including a hole-injectable CuPc organic film is stacked between a pair of electrodes, at least one of which is a transparent conductive film, wherein the CuPc organic film is formed. And thereafter, rinsing the surface of the CuPc organic film with an electron-accepting gas. 5. A method of manufacturing an organic EL in which an organic layer including a hole-injectable CuPc organic film is laminated between a pair of electrodes, at least one of which is formed of a transparent conductive film, wherein the CuPc organic film is formed of a plurality of layers. And a step of rinsing the surface with an electron-accepting gas every time each layer of the CuPc organic film is formed.