JP2000059260A - Storage device - Google Patents
Storage deviceInfo
- Publication number
- JP2000059260A JP2000059260A JP10220023A JP22002398A JP2000059260A JP 2000059260 A JP2000059260 A JP 2000059260A JP 10220023 A JP10220023 A JP 10220023A JP 22002398 A JP22002398 A JP 22002398A JP 2000059260 A JP2000059260 A JP 2000059260A
- Authority
- JP
- Japan
- Prior art keywords
- memory card
- signal
- antenna
- type memory
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Near-Field Transmission Systems (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、記憶装置に関し、
特に、非接触でデータの読み出しや書き込みを行い得る
メモリカードにおいて、ループアンテナの送受信感度を
高めることができるようにした記憶装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a storage device,
In particular, the present invention relates to a storage device capable of increasing the transmission / reception sensitivity of a loop antenna in a memory card capable of reading and writing data without contact.
【0002】[0002]
【従来の技術】近年、情報処理の高能率化と機密保持な
どの観点から、ICチップのような情報(データ)の記
憶および処理を行う半導体素子を実装し、記憶容量など
を飛躍的に高めたメモリカードがデータカードとして広
く使用されている。2. Description of the Related Art In recent years, from the viewpoints of improving the efficiency of information processing and maintaining confidentiality, semiconductor elements such as IC chips for storing and processing information (data) are mounted to dramatically increase the storage capacity. Memory cards are widely used as data cards.
【0003】そして最近は、入出力の電波信号を送受信
するデータ送受信用アンテナ回路(コイル)を内蔵し、
外部処理装置との間のデータの読み出しや書き込みを、
いわゆる無線方式によって、非接触的に行うように構成
された非接触型メモリカードも開発されている。Recently, a data transmission / reception antenna circuit (coil) for transmitting / receiving an input / output radio signal has been incorporated.
Read and write data to and from external processing devices
A non-contact type memory card configured to perform non-contact by a so-called wireless system has also been developed.
【0004】非接触型メモリカード111は、基本的に
2枚のフィルムシートで構成され、図10は、それを表
面から見たフィルムシート上の構成を示しており、図1
1は非接触型メモリカード111を裏面から見たフィル
ムシート上の構成を示している。[0004] The non-contact type memory card 111 is basically composed of two film sheets. FIG. 10 shows the structure of the film sheet as viewed from the surface.
Reference numeral 1 denotes a configuration on a film sheet when the non-contact type memory card 111 is viewed from the back.
【0005】図10に示すように、非接触型メモリカー
ド111の表面のフィルムシート125上には、情報の
記憶および処理を行うICチップ122(ワイヤボンデ
ィング後、エポキシ樹脂で封止)、コンデンサ電極12
1が実装されており、その周辺部に送受信用のアンテナ
パターン124が形成されている。また、アンテナパタ
ーン124は、スルーホール123を介して裏面のコン
デンサ電極131に接続されている。As shown in FIG. 10, on a film sheet 125 on the surface of the non-contact type memory card 111, an IC chip 122 for storing and processing information (sealed with epoxy resin after wire bonding), a capacitor electrode 12
1 is mounted, and a transmitting / receiving antenna pattern 124 is formed in a peripheral portion thereof. Further, the antenna pattern 124 is connected to the capacitor electrode 131 on the back surface through the through hole 123.
【0006】図11に示すように、非接触型メモリカー
ド111の裏面のフィルムシート132上には、コンデ
ンサ電極131が実装されている。コンデンサ電極13
1と前述のコンデンサ電極121の間には、誘電体(図
示せず)が配置されており、これらが一体となってコン
デンサとして機能している。即ち、非接触型メモリカー
ド111の電源として利用される。As shown in FIG. 11, a capacitor electrode 131 is mounted on a film sheet 132 on the back surface of the non-contact type memory card 111. Capacitor electrode 13
A dielectric (not shown) is disposed between the capacitor electrode 1 and the above-mentioned capacitor electrode 121, and these functions integrally as a capacitor. That is, it is used as a power source for the non-contact type memory card 111.
【0007】ところで、前記構成の非接触型メモリカー
ド111の送受信感度は、アンテナとして機能するコイ
ルのインピーダンスと開口面積などによって決定され、
インピーダンスが低く、開口面積が大きいほど送受信感
度は良好となる。By the way, the transmission / reception sensitivity of the non-contact type memory card 111 having the above configuration is determined by the impedance and the opening area of the coil functioning as an antenna.
The lower the impedance and the larger the aperture area, the better the transmission / reception sensitivity.
【0008】従って、前述の非接触型メモリカード11
1においては、一般に送受信用コイル状アンテナパター
ン124を、数100μmの幅、数100μmのピッチ
で数10パターン形成してインピーダンスを低くすると
ともに、アンテナパターン124をフィルムシート12
5の外周縁に沿って渦巻き状に形成することで、開口面
積の増大を図っていた。Therefore, the aforementioned non-contact type memory card 11
In No. 1, in order to lower the impedance by forming the transmitting and receiving coil-shaped antenna pattern 124 with a width of several hundreds of micrometers and a pitch of several hundreds of micrometers in order to lower the impedance, the antenna pattern 124 is formed on the film sheet 12.
5 is formed in a spiral shape along the outer peripheral edge to increase the opening area.
【0009】[0009]
【発明が解決しようとする課題】しかしながら、上述の
従来の構成では、非接触型メモリカード111と情報処
理装置との間でデータの読み出しや書き込みを行う場
合、アンテナの送受信感度がまだ充分でない(開口面積
が小さい)ため、非常に接近した状態でしか通信ができ
ないという課題があった。However, in the above-described conventional configuration, when data is read or written between the non-contact type memory card 111 and the information processing device, the transmission and reception sensitivity of the antenna is not yet sufficient ( Due to the small opening area), there is a problem that communication can be performed only in a very close state.
【0010】本発明は、このような状況に鑑みてなされ
たものであり、非接触型メモリカードにおいて、ループ
アンテナの送受信感度を高めることにより、情報処理装
置との通信距離が拡大できるようにするものである。[0010] The present invention has been made in view of such circumstances, and in a non-contact type memory card, the communication distance with an information processing apparatus can be increased by increasing the transmission / reception sensitivity of a loop antenna. Things.
【0011】[0011]
【課題を解決するための手段】請求項1に記載の記憶装
置は、情報の記憶および処理を行い、外部装置との間で
情報の送受信を行う記憶装置において、電気的な絶縁機
能を有する多層構造の絶縁手段と、絶縁手段上に実装さ
れ、情報の記憶および処理を行う情報処理手段と、多層
構造の絶縁手段上にそれぞれループ状に形成され、外部
装置からの電波を受信するか、または情報処理手段から
の信号を電波によって送信する送受信手段と、絶縁手段
上であって、ループ状の送受信手段の内側に形成された
磁束を集中させる磁束集中手段とを備えることを特徴と
する。According to a first aspect of the present invention, there is provided a storage device which stores and processes information and transmits and receives information to and from an external device. Insulating means of the structure, information processing means mounted on the insulating means, and performs information storage and processing, respectively formed in a loop on the insulating means of a multilayer structure, to receive radio waves from external devices, or It is characterized by comprising a transmitting / receiving means for transmitting a signal from the information processing means by radio waves, and a magnetic flux concentrating means for concentrating a magnetic flux formed on the insulating means and inside the loop-shaped transmitting / receiving means.
【0012】請求項1に記載の記憶装置においては、多
層構造の絶縁手段が、電気的な絶縁機能を有し、情報処
理手段が、絶縁手段上に実装され、情報の記憶および処
理を行い、送受信手段が、多層構造の絶縁手段上にそれ
ぞれループ状に形成され、外部装置からの電波を受信す
るか、または情報処理手段からの信号を電波によって送
信し、磁束集中手段が、絶縁手段上であって、ループ状
の送受信手段の内側に形成され、磁束を集中させる。In the storage device according to the first aspect, the insulating means having a multilayer structure has an electrical insulating function, the information processing means is mounted on the insulating means, and stores and processes information. The transmitting / receiving means is formed in a loop on the insulating means having a multilayer structure, and receives a radio wave from an external device or transmits a signal from the information processing means by a radio wave. Thus, it is formed inside the loop-shaped transmitting / receiving means and concentrates magnetic flux.
【0013】[0013]
【発明の実施の形態】以下に本発明の実施の形態を説明
するが、特許請求の範囲に記載の発明の各手段と、以下
の実施の形態との対応関係を明らかにするために、各手
段の後の括弧内に、対応する実施の形態(但し一例)を
付加して本発明の特徴を記述すると、次のようになる。
但し、勿論この記載は、各手段を記載したものに限定す
ることを意味するものではない。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below. In order to clarify the correspondence between each means of the invention described in the claims and the following embodiments, When the features of the present invention are described by adding the corresponding embodiments (however, examples) in parentheses after the means, the following is obtained.
However, of course, this description does not mean that each means is limited to those described.
【0014】即ち、請求項1に記載の記憶装置は、情報
の記憶および処理を行い、外部装置との間で情報の送受
信を行う記憶装置において、電気的な絶縁機能を有する
多層構造の絶縁手段(例えば、図1に示すフィルムシー
ト16および24)と、絶縁手段上に実装され、情報の
記憶および処理を行う情報処理手段(例えば、図1に示
すICチップ13)と、多層構造の絶縁手段上にそれぞ
れループ状に形成され、外部装置からの電波を受信する
か、または情報処理手段からの信号を電波によって送信
する送受信手段(例えば、図1に示すアンテナパターン
15および23)と、絶縁手段上であって、ループ状の
送受信手段の内側に形成された磁束を集中させる磁束集
中手段(例えば、図1に示す磁性体12および22)と
を備えることを特徴とする。That is, the storage device according to the first aspect is a storage device that stores and processes information and transmits and receives information to and from an external device. (For example, the film sheets 16 and 24 shown in FIG. 1), information processing means (for example, the IC chip 13 shown in FIG. 1) mounted on the insulating means for storing and processing information, and a multilayer insulating means. Transmitting / receiving means (for example, antenna patterns 15 and 23 shown in FIG. 1) for receiving radio waves from an external device or transmitting signals from an information processing means by radio waves, respectively; And a magnetic flux concentrating means (for example, magnetic bodies 12 and 22 shown in FIG. 1) for concentrating the magnetic flux formed inside the loop-shaped transmitting / receiving means. To.
【0015】図1および図2を参照しながら、本発明の
一実施の形態の構成について説明する。The configuration of an embodiment of the present invention will be described with reference to FIGS.
【0016】図1(A)は、本発明の非接触型メモリカ
ード1を表面から見たフィルムシート16上の構成例を
示している。図1(A)に示すように、非接触型メモリ
カード1の表面のフィルムシート16上には、情報の記
憶および処理を行うICチップ13(ワイヤボンディン
グ後、エポキシ樹脂で封止)、コンデンサ電極11が実
装されており、その周辺部に送受信用のアンテナパター
ン15がコイル状に形成されている。また、アンテナパ
ターン15は、スルーホール14を介して裏面のアンテ
ナパターン23に接続されている。アンテナパターン1
5は、例えば、フィルムシート16上に形成された銅箔
を選択エッチングすることにより形成されたものであ
る。FIG. 1A shows an example of the structure of a non-contact type memory card 1 of the present invention on a film sheet 16 as viewed from the surface. As shown in FIG. 1A, on a film sheet 16 on the surface of the non-contact type memory card 1, an IC chip 13 for storing and processing information (sealed with epoxy resin after wire bonding), a capacitor electrode 11 are mounted, and a transmission / reception antenna pattern 15 is formed in a coil shape in a peripheral portion thereof. Further, the antenna pattern 15 is connected to the antenna pattern 23 on the back surface through the through hole 14. Antenna pattern 1
5 is formed, for example, by selectively etching a copper foil formed on the film sheet 16.
【0017】さらに、ループアンテナの送受信感度を高
めるため、アンテナパターン15の内側(コンデンサ電
極11の左側)に、磁性体12が塗布、形成されてい
る。この磁性体12により、コイル状のアンテナパター
ン15により発生された磁束を集中することができ、そ
の感度を高めることができる。Further, in order to enhance the transmission / reception sensitivity of the loop antenna, a magnetic body 12 is applied and formed inside the antenna pattern 15 (left side of the capacitor electrode 11). With this magnetic body 12, the magnetic flux generated by the coil-shaped antenna pattern 15 can be concentrated, and the sensitivity can be increased.
【0018】図1(B)は、非接触型メモリカード1を
裏面から見たフィルムシート24上の構成例を示してい
る。このフィルムシート24は、フィルムシート16に
対向して、その裏側に配置されている。図1(B)に示
すように、非接触型メモリカード1の裏面のフィルムシ
ート24上には、アンテナパターン23が形成されてい
る。このように、アンテナパターンを表面と裏面に形成
することにより、アンテナの実効面積を拡大することが
できる。また、アンテナパターン23は、磁束を効率的
に拾うために、前述のアンテナパターン15とは重なら
ない位置に配置されている。FIG. 1B shows an example of the structure of a non-contact type memory card 1 on a film sheet 24 as viewed from the back. This film sheet 24 is arranged opposite to the film sheet 16 and on the back side thereof. As shown in FIG. 1B, an antenna pattern 23 is formed on the film sheet 24 on the back surface of the non-contact type memory card 1. As described above, by forming the antenna pattern on the front surface and the back surface, the effective area of the antenna can be increased. The antenna pattern 23 is arranged at a position that does not overlap with the antenna pattern 15 in order to efficiently pick up magnetic flux.
【0019】フィルムシート24上には、コンデンサ電
極21が実装されている。コンデンサ電極21と前述の
コンデンサ電極11の間には、誘電体(図示せず)が配
置されており、これらが一体となってコンデンサとして
機能しており、例えば、非接触型メモリカード1の電源
として利用される。また、ループアンテナの送受信感度
を高めるため、コンデンサ電極21の左側に、磁性体2
2が磁性体12と対向する位置に塗布、形成されてい
る。On the film sheet 24, a capacitor electrode 21 is mounted. A dielectric (not shown) is arranged between the capacitor electrode 21 and the above-mentioned capacitor electrode 11, and these functions integrally as a capacitor. Used as Further, in order to enhance the transmission / reception sensitivity of the loop antenna, the magnetic material 2
2 is applied and formed at a position facing the magnetic body 12.
【0020】図2(A)および(B)は、非接触型メモ
リカード1を表面から見たフィルムシートの他の構成例
を示している。図2(A)および(B)においては、コ
ンデンサ電極および磁性体の形状および配置が、図1
(A)とは異なっている。図2(A)に示すように、磁
性体31は逆“コ”の字型となっており、その内側にコ
ンデンサ電極32が配置されている。裏面に関しては図
示していないが、磁性体31およびコンデンサ電極32
と対向する位置に、磁性体およびコンデンサ電極がそれ
ぞれ配置されている。FIGS. 2A and 2B show another configuration example of the film sheet when the non-contact type memory card 1 is viewed from the surface. 2 (A) and 2 (B), the shapes and arrangements of the capacitor electrodes and the magnetic material are shown in FIG.
It is different from (A). As shown in FIG. 2A, the magnetic body 31 has an inverted "U" shape, and the capacitor electrode 32 is disposed inside the magnetic body. The back surface is not shown, but the magnetic material 31 and the capacitor electrode 32 are not shown.
The magnetic material and the capacitor electrode are respectively arranged at the positions facing each other.
【0021】図2(B)においては、コンデンサ電極4
2が逆“コ”の字型で、その内側に磁性体41が形成さ
れている。この例に関しても、裏面を図示していない
が、磁性体41およびコンデンサ電極42と対向する位
置に、磁性体およびコンデンサ電極がそれぞれ配置され
ている。In FIG. 2B, the capacitor electrode 4
Reference numeral 2 denotes an inverted "U" shape, on which a magnetic body 41 is formed. Also in this example, the back surface is not shown, but the magnetic material and the capacitor electrode are arranged at positions facing the magnetic material 41 and the capacitor electrode 42, respectively.
【0022】尚、上述の図1および図2は実施例であっ
て、磁性体およびコンデンサ電極の形状および配置は、
アンテナパターンの内側であれば、これに限られるもの
ではない。FIGS. 1 and 2 described above are examples, and the shapes and arrangements of the magnetic material and the capacitor electrode are as follows.
The present invention is not limited to this as long as it is inside the antenna pattern.
【0023】次に、ループアンテナの内側に磁性体を塗
布することにより、アンテナの送受信感度が向上する理
由について、図3乃至図5を参照しながら説明する。Next, the reason why the transmission and reception sensitivity of the antenna is improved by applying a magnetic substance to the inside of the loop antenna will be described with reference to FIGS.
【0024】図3は、アンペールの右ねじの法則を説明
するための図である。電荷の存在する空間には必ず電界
が現れるように、電流が存在すれば必ず磁界が現れるこ
とが知られている。電流により発生する磁界の磁力線
は、必ず電流のまわりを回る閉曲線となり、電流および
磁界の方向に関して、「(1)電流の方向が右ねじの進
む方向であるとき、磁界はねじの回る方向となる(図3
(A))。(2)環状電流の方向が右ねじの回る方向で
あるとき、環の内側の磁界はねじの進む方向となる(図
3(B))。」が成り立つ。これが、アンペールの右ね
じの法則である。FIG. 3 is a diagram for explaining the rule of Ampere's right-hand thread. It is known that an electric field always appears in a space where a charge exists, and a magnetic field always appears when a current exists. The lines of magnetic force of the magnetic field generated by the current are always closed curves around the current. Regarding the directions of the current and the magnetic field, "(1) When the direction of the current is the direction of the right-handed screw, the magnetic field is the direction of the screw-turn (FIG. 3
(A)). (2) When the direction of the ring current is the direction in which the right-hand screw rotates, the magnetic field inside the ring becomes the direction in which the screw advances (FIG. 3B). Holds. This is Ampere's right-hand rule.
【0025】図4は、導線に電流が流れたときの電磁波
の伝搬の様子を示している。図4に示すように、導線に
電流Iが流れることにより、磁界Hが発生する。そし
て、電界Eと磁界Hが時間的に変化することにより、電
磁波エネルギーとして伝搬していく。尚、電磁波の伝わ
る方向と電界Eおよび磁界Hの向きは常に垂直をなして
いる。FIG. 4 shows the state of propagation of an electromagnetic wave when a current flows through a conductor. As shown in FIG. 4, the magnetic field H is generated by the current I flowing through the conductor. Then, as the electric field E and the magnetic field H change with time, they propagate as electromagnetic wave energy. The direction in which the electromagnetic wave propagates and the directions of the electric field E and the magnetic field H are always perpendicular.
【0026】図5は、アンペールの周回積分の法則を説
明するための図である。図5に示すように、磁界の強さ
Hを閉曲線Cについて線積分(周回積分)すると、その
閉曲線Cで囲まれた面を貫く電流Iの代数和となること
が知られている。これが、アンペールの周回積分の法則
である。アンペールの周回積分の法則は、次の(1)式
で表される。FIG. 5 is a diagram for explaining the law of Ampere's circuit integration. As shown in FIG. 5, it is known that when the strength H of the magnetic field is linearly integrated (circularly integrated) with respect to the closed curve C, an algebraic sum of the current I passing through a surface surrounded by the closed curve C is known. This is Ampere's orbital integration law. Ampere's orbital integration law is expressed by the following equation (1).
【0027】[0027]
【数1】 (Equation 1)
【0028】但し、Iiの正負はアンペールの右ねじの
法則に従って決めるものとする。However, the sign of I i is determined according to Ampere's right-hand rule.
【0029】従って、電流が流れる閉回路内に磁性体を
形成することにより、磁気誘導が発生し、閉回路内の磁
束密度を向上させることができる。即ち、アンテナ感度
を向上させることができる。Therefore, by forming a magnetic material in a closed circuit through which a current flows, magnetic induction occurs, and the magnetic flux density in the closed circuit can be improved. That is, antenna sensitivity can be improved.
【0030】次に、本発明の非接触型メモリカード1の
使用例について、図6乃至図9を参照しながら説明す
る。Next, an example of use of the non-contact type memory card 1 of the present invention will be described with reference to FIGS.
【0031】図6は、図1に示した非接触型メモリカー
ド1がカセット51に装着される様子を示している。図
6に示すように、非接触型メモリカード1は、カセット
51の筐体に設けられた凹部52および53にそれぞれ
装着される。FIG. 6 shows a state where the non-contact type memory card 1 shown in FIG. As shown in FIG. 6, the non-contact type memory card 1 is mounted in concave portions 52 and 53 provided in a casing of the cassette 51, respectively.
【0032】図7は、リーダライタ62をパーソナルコ
ンピュータ(以下、適宜パソコンと略記する)61に接
続し、カセット51に装着された非接触型メモリカード
1からデータを読み出したり、非接触型メモリカード1
にデータを書き込んだりする様子を示している。この例
の場合、リーダライタ62は、パソコン61によって制
御され、パソコン61からの指令に従って、非接触型メ
モリカード1に記憶されているデータを読み出したり、
非接触型メモリカード1にデータを書き込んだりするこ
とができる。FIG. 7 shows a case where a reader / writer 62 is connected to a personal computer (hereinafter, abbreviated as a personal computer) 61 to read data from the non-contact type memory card 1 mounted on the cassette 51 or to read out data from the non-contact type memory card. 1
2 shows how data is written to the memory. In the case of this example, the reader / writer 62 is controlled by the personal computer 61 and reads data stored in the non-contact type memory card 1 in accordance with a command from the personal computer 61,
Data can be written to the non-contact type memory card 1.
【0033】図8は、非接触型メモリカード1の構成例
を示すブロック図である。非接触型メモリカード1を構
成するアンテナ15は、後述するリーダライタ62から
の電波を受信し、受信した電波に対応する信号を同調回
路71および電源回路80に供給するようになされてい
る。同調回路71は、アンテナ15より供給された信号
から、非接触型メモリカード1とリーダライタ62との
間の通信に用いられる搬送波周波数を抽出するようにな
されている。FIG. 8 is a block diagram showing a configuration example of the non-contact type memory card 1. As shown in FIG. The antenna 15 constituting the non-contact type memory card 1 receives a radio wave from a reader / writer 62 described later and supplies a signal corresponding to the received radio wave to the tuning circuit 71 and the power supply circuit 80. The tuning circuit 71 extracts a carrier frequency used for communication between the non-contact type memory card 1 and the reader / writer 62 from a signal supplied from the antenna 15.
【0034】増幅回路72は、入力された信号を所定の
レベルまでに増幅した後、出力するようになされてい
る。復調回路73は、搬送波周波数に変調された信号を
復調し、対応する所定のデータに変換するようになされ
ている。通信制御回路74は、データの送受信を切り替
えるようになされている。マイコン(マイクロコンピュ
ータ)75は、ROM(Read Only Memory)76に記憶され
た制御プログラムに従って各部を制御するようになされ
ている。また、通信制御回路74を介して供給されたデ
ータのうち、記憶しておく必要のあるデータを適宜、EE
PROM(Electrically Erasable and Programmable Read O
nly Memory)77に供給するようになされている。The amplifying circuit 72 amplifies the input signal to a predetermined level and then outputs the amplified signal. The demodulation circuit 73 demodulates the signal modulated to the carrier frequency and converts the signal into corresponding predetermined data. The communication control circuit 74 switches between transmission and reception of data. The microcomputer (microcomputer) 75 controls each unit according to a control program stored in a ROM (Read Only Memory) 76. Further, of the data supplied via the communication control circuit 74, data that needs to be stored is appropriately replaced by EE.
PROM (Electrically Erasable and Programmable Read O
nly Memory) 77.
【0035】EEPROM77は、マイコン75より供給され
たデータを記憶するようになされている。変調回路78
は、通信制御回路74より供給されたデータを搬送波周
波数の信号に変調し、出力するようになされている。増
幅回路79は、変調回路78より供給された搬送波周波
数に変調された信号を、通信に必要なレベルにまで増幅
するようになされている。そして、アンテナ15は、増
幅回路79によって増幅された搬送波周波数の信号を電
波によって送信するようになされている。The EEPROM 77 stores data supplied from the microcomputer 75. Modulation circuit 78
Is adapted to modulate the data supplied from the communication control circuit 74 into a signal having a carrier frequency and output the signal. The amplification circuit 79 amplifies the signal modulated to the carrier frequency supplied from the modulation circuit 78 to a level necessary for communication. The antenna 15 transmits the carrier frequency signal amplified by the amplifier circuit 79 by radio waves.
【0036】次に、その動作について説明する。先ず、
リーダライタ62から送信された電波を受信し、それを
EEPROM77に記憶させる場合の処理手順について説明す
る。アンテナ15によって受信されたリーダライタ62
からの電波は、対応する電気信号に変換され、同調回路
71に供給される。同調回路71は、アンテナ15より
供給された信号のうち、所定の搬送波周波数に対応する
信号だけを抽出し、増幅回路72に供給する。増幅回路
72は、同調回路71より供給された信号を所定の信号
レベルにまで増幅した後、復調回路73に供給する。Next, the operation will be described. First,
Receives the radio wave transmitted from reader / writer 62 and
A processing procedure when storing in the EEPROM 77 will be described. Reader / writer 62 received by antenna 15
Is converted into a corresponding electric signal and supplied to the tuning circuit 71. The tuning circuit 71 extracts only a signal corresponding to a predetermined carrier frequency from the signals supplied from the antenna 15 and supplies the extracted signal to the amplifier circuit 72. The amplification circuit 72 amplifies the signal supplied from the tuning circuit 71 to a predetermined signal level, and then supplies the signal to the demodulation circuit 73.
【0037】復調回路73は、増幅回路72より供給さ
れた信号を復調し、通信制御回路74に供給する。通信
制御回路74は、この場合、受信モードに切り替えられ
ており、復調回路73より供給された信号をデジタルデ
ータに変換した後、マイコン75に供給する。通信制御
回路74よりマイコン75に供給されたデータは、マイ
コン75により記憶しておくべきデータであるか否かが
判定され、判定の結果に基づいて、適宜、EEPROM77に
供給され、記憶される。The demodulation circuit 73 demodulates the signal supplied from the amplification circuit 72 and supplies the signal to the communication control circuit 74. In this case, the communication control circuit 74 has been switched to the reception mode, converts the signal supplied from the demodulation circuit 73 into digital data, and supplies the digital data to the microcomputer 75. The data supplied from the communication control circuit 74 to the microcomputer 75 is determined by the microcomputer 75 as to whether or not the data is to be stored. Based on the result of the determination, the data is supplied to the EEPROM 77 and stored as appropriate.
【0038】アンテナ15より供給された電気信号は、
電源回路80にも供給される。ここでは、リーダライタ
62から送信される搬送波との電磁結合により、エネル
ギーが取り出され、必要な電力が各部に供給される。こ
のように、非接触型メモリカード1には、外部から電源
が供給される。The electric signal supplied from the antenna 15 is
The power is also supplied to the power supply circuit 80. Here, energy is extracted by electromagnetic coupling with a carrier transmitted from the reader / writer 62, and necessary power is supplied to each unit. As described above, power is supplied to the non-contact type memory card 1 from the outside.
【0039】次に、通信制御回路74より供給されたリ
ーダライタ62からのデータ(コマンド)が、EEPROM7
7に記憶されているデータの伝送要求である場合の動作
について説明する。マイコン75は、通信制御回路74
を介してデータの送信要求に対応するデータ(コマン
ド)を受信すると、EEPROM77から、そこに記憶されて
いるデータを読み出し、読み出したデータを通信制御回
路74に供給する。通信制御回路74は、動作モードを
送信モードに切り替え、マイコン75より供給されたデ
ータを変調回路78に供給する。Next, the data (command) from the reader / writer 62 supplied from the communication control circuit 74 is transmitted to the EEPROM 7.
The operation in the case of a request to transmit the data stored in 7 will be described. The microcomputer 75 includes a communication control circuit 74
When the data (command) corresponding to the data transmission request is received via the EEPROM 77, the data stored therein is read from the EEPROM 77, and the read data is supplied to the communication control circuit 74. The communication control circuit 74 switches the operation mode to the transmission mode, and supplies the data supplied from the microcomputer 75 to the modulation circuit 78.
【0040】変調回路78は、通信制御回路74より供
給された信号を搬送波周波数に変調し、増幅回路79に
供給する。増幅回路79は、変調回路78より供給され
た信号を、通信に必要なレベルにまで増幅する。増幅回
路79によって増幅された信号は、アンテナ15を介し
て送信される。The modulation circuit 78 modulates the signal supplied from the communication control circuit 74 to a carrier frequency and supplies the signal to the amplifier circuit 79. The amplification circuit 79 amplifies the signal supplied from the modulation circuit 78 to a level required for communication. The signal amplified by the amplifier circuit 79 is transmitted via the antenna 15.
【0041】図9は、図7のリーダライタ62の構成例
を示すブロック図である。アンテナ91は、非接触型メ
モリカード1に対して所定の信号を送信したり、非接触
型メモリカード1との間の通信を行うために、所定の搬
送波の送受信を行うようになされている。また、非接触
型メモリカード1に対して電源を供給するための磁界を
発生するようにもなされている。FIG. 9 is a block diagram showing a configuration example of the reader / writer 62 of FIG. The antenna 91 transmits and receives a predetermined carrier wave to transmit a predetermined signal to the non-contact type memory card 1 and to perform communication with the non-contact type memory card 1. Further, a magnetic field for supplying power to the non-contact type memory card 1 is generated.
【0042】同調回路92は、アンテナ91より供給さ
れた信号から、非接触型メモリカード1とリーダライタ
62との間の通信に用いられる搬送波周波数を抽出する
ようになされている。増幅回路93は、入力された信号
を所定のレベルにまで増幅した後、出力するようになさ
れている。復調回路94は、搬送波周波数に変調された
信号を復調し、所定のデータに変換するようになされて
いる。通信制御回路95は、データの送受信を切り替え
るとともに、通信を制御するようになされている。マイ
コン96は、ROM97に記憶された制御プログラムに従
って各部を制御するようになされている。また、通信制
御回路95を介して供給されたデータのうち、記憶して
おく必要のあるデータを適宜、RAM(Random Access Memo
ry)98に供給するようになされている。The tuning circuit 92 extracts a carrier wave frequency used for communication between the non-contact type memory card 1 and the reader / writer 62 from a signal supplied from the antenna 91. The amplifying circuit 93 amplifies the input signal to a predetermined level and then outputs the signal. The demodulation circuit 94 demodulates a signal modulated to a carrier frequency and converts the signal into predetermined data. The communication control circuit 95 switches between transmission and reception of data and controls communication. The microcomputer 96 controls each section according to a control program stored in the ROM 97. Also, of the data supplied via the communication control circuit 95, data that needs to be stored is appropriately stored in a RAM (Random Access Memory).
ry) 98.
【0043】RAM98は、マイコン96より供給された
データを記憶するようになされている。変調回路99
は、通信制御回路95より供給されたデータを搬送波周
波数の信号に変調し、出力するようになされている。増
幅回路100は、変調回路99より供給された搬送波周
波数に変調された信号を、通信に必要なレベルにまで増
幅するようになされている。そして、アンテナ91は、
増幅回路100によって増幅された搬送波周波数の信号
を電波によって送信するようになされている。The RAM 98 stores the data supplied from the microcomputer 96. Modulation circuit 99
Is adapted to modulate the data supplied from the communication control circuit 95 into a signal of a carrier frequency and output the signal. The amplification circuit 100 amplifies the signal modulated to the carrier frequency supplied from the modulation circuit 99 to a level necessary for communication. And the antenna 91 is
The signal of the carrier frequency amplified by the amplifier circuit 100 is transmitted by radio waves.
【0044】次に、リーダライタ62の動作について説
明する。先ず、非接触型メモリカード1から送信された
データを受信する場合の動作について説明する。アンテ
ナ91によって受信された非接触型メモリカード1から
の搬送波は、対応する電気信号に変換された後、同調回
路92に供給される。同調回路92は、アンテナ91よ
り供給された信号から、所定の搬送波周波数の信号を抽
出し、増幅回路93に供給する。増幅回路93は、同調
回路92より供給された信号を所定の信号レベルにまで
増幅した後、復調回路94に供給する。Next, the operation of the reader / writer 62 will be described. First, an operation when receiving data transmitted from the non-contact type memory card 1 will be described. The carrier wave received from the non-contact type memory card 1 by the antenna 91 is converted into a corresponding electric signal and then supplied to the tuning circuit 92. The tuning circuit 92 extracts a signal having a predetermined carrier frequency from the signal supplied from the antenna 91 and supplies the signal to the amplifier circuit 93. The amplification circuit 93 amplifies the signal supplied from the tuning circuit 92 to a predetermined signal level, and supplies the signal to a demodulation circuit 94.
【0045】復調回路94は、搬送波周波数に変調され
た信号を復調し、通信制御回路95に供給する。通信制
御回路95は、受信モードに切り替えられ、復調回路9
4より供給された信号をデジタルデータに変換した後、
マイコン96に供給する。マイコン96は、通信制御回
路95より供給されたデータを一旦RAM98に記憶させ
る。その後、通信線を介して図示せぬ外部回路に伝送す
る。The demodulation circuit 94 demodulates the signal modulated to the carrier frequency and supplies it to the communication control circuit 95. The communication control circuit 95 is switched to the reception mode and the demodulation circuit 9
After converting the signal supplied from 4 into digital data,
It is supplied to the microcomputer 96. The microcomputer 96 temporarily stores the data supplied from the communication control circuit 95 in the RAM 98. Thereafter, the signal is transmitted to an external circuit (not shown) via a communication line.
【0046】次に、データ伝送要求が発生し、リーダラ
イタ62から非接触型メモリカード1に対して、所定の
データを伝送する場合の動作について説明する。その場
合、必要に応じて、通信線を介して、外部回路からマイ
コン96に対して、非接触型メモリカード1に記憶させ
たいデータ等が伝送される。マイコン96は、通信線を
介して供給されたデータまたはRAM98に記憶されてい
るデータを通信制御回路95に供給する。Next, the operation when a data transmission request is generated and predetermined data is transmitted from the reader / writer 62 to the non-contact type memory card 1 will be described. In this case, data and the like to be stored in the non-contact type memory card 1 are transmitted from the external circuit to the microcomputer 96 via the communication line as needed. The microcomputer 96 supplies the data supplied via the communication line or the data stored in the RAM 98 to the communication control circuit 95.
【0047】通信制御回路95は、マイコン96より供
給されたデータをアナログ信号に変換した後、変調回路
99に供給する。変調回路99は、通信制御回路95よ
り供給された信号を所定の搬送波周波数の信号に変調
し、増幅回路100に供給する。増幅回路100は、変
調回路99より供給された信号を通信に必要なレベルに
まで増幅した後、アンテナ91を介して送信する。The communication control circuit 95 converts the data supplied from the microcomputer 96 into an analog signal, and supplies the analog signal to the modulation circuit 99. The modulation circuit 99 modulates the signal supplied from the communication control circuit 95 into a signal having a predetermined carrier frequency and supplies the signal to the amplifier circuit 100. The amplification circuit 100 amplifies the signal supplied from the modulation circuit 99 to a level required for communication, and transmits the signal via the antenna 91.
【0048】アンテナ91を介して送信された信号は、
非接触型メモリカード1のアンテナ15によって受信さ
れ、上述したようにして、EEPROM77に書き込まれる。The signal transmitted via the antenna 91 is
It is received by the antenna 15 of the non-contact type memory card 1 and written in the EEPROM 77 as described above.
【0049】以上のようにして、非接触型メモリカード
1とリーダライタ62との間で、データの送受信を行う
ことができる。As described above, data can be transmitted and received between the non-contact type memory card 1 and the reader / writer 62.
【0050】尚、本発明は上述の実施の形態に限定され
るものではなく、発明の主旨を逸脱しない範囲で様々な
変形をとりうる。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the invention.
【0051】[0051]
【発明の効果】以上の如く、請求項1に記載の記憶装置
によれば、ループ状の送受信手段を多層構造にし、その
内側に磁束集中手段を形成するようにしたので、磁束密
度を向上させることが可能となる。即ち、アンテナ感度
を向上させることが可能となる。従って、記憶装置と外
部装置との間の通信距離を拡大することができる。As described above, according to the storage device of the first aspect, the loop-shaped transmission / reception means has a multilayer structure and the magnetic flux concentration means is formed inside the transmission / reception means, thereby improving the magnetic flux density. It becomes possible. That is, the antenna sensitivity can be improved. Therefore, the communication distance between the storage device and the external device can be increased.
【図1】本発明の非接触型メモリカード1の構成例を示
す図である。FIG. 1 is a diagram showing a configuration example of a non-contact type memory card 1 of the present invention.
【図2】本発明の非接触型メモリカード1の他の構成例
を示す表面図である。FIG. 2 is a front view showing another configuration example of the non-contact type memory card 1 of the present invention.
【図3】アンペールの右ねじの法則を説明するための図
である。FIG. 3 is a diagram for explaining Ampere's right-handed screw rule.
【図4】電磁波の伝搬の様子を説明するための図であ
る。FIG. 4 is a diagram for explaining a state of propagation of an electromagnetic wave.
【図5】アンペールの周回積分の法則を説明するための
図である。FIG. 5 is a diagram for explaining the law of Ampere's circuit integration;
【図6】非接触型メモリカード1のカセット51への装
着例を示す図である。FIG. 6 is a diagram showing an example of mounting a non-contact type memory card 1 on a cassette 51;
【図7】カセット51に装着された非接触型メモリカー
ド1の使用例を示す図である。FIG. 7 is a diagram showing a usage example of the non-contact type memory card 1 mounted on the cassette 51.
【図8】本発明の非接触型メモリカード1の一実施の形
態の構成を示すブロック図である。FIG. 8 is a block diagram showing a configuration of one embodiment of the non-contact type memory card 1 of the present invention.
【図9】リーダライタ62の一実施の形態の構成を示す
ブロック図である。FIG. 9 is a block diagram illustrating a configuration of an embodiment of a reader / writer 62;
【図10】従来の非接触型メモリカード111の構成を
示す表面図である。FIG. 10 is a front view showing a configuration of a conventional non-contact type memory card 111.
【図11】従来の非接触型メモリカード111の構成を
示す裏面図である。FIG. 11 is a rear view showing a configuration of a conventional non-contact type memory card 111.
1,111 非接触型メモリカード, 11,21,3
2,42,121,131 コンデンサ電極, 12,
22,31,41 磁性体, 13,33,43,12
2,122 ICチップ, 14,34,44,123
スルーホール, 15,23,35,45,124
アンテナパターン, 16,24,36,46,12
5,132 フィルムシート, 51 カセット, 5
2,53凹部, 61 パソコン, 62 リーダライ
タ, 71,92 同調回路,72,79,93,10
0 増幅回路, 73,94 復調回路, 74,95
通信制御回路, 75,96 マイコン, 76,97
ROM, 77 EEPROM, 78,99 変調回路,
80 電源回路, 91 アンテナ, 98 RAM1,111 Non-contact type memory card, 11, 21, 3
2, 42, 121, 131 capacitor electrode, 12,
22, 31, 41 Magnetic material, 13, 33, 43, 12
2,122 IC chip, 14,34,44,123
Through hole, 15, 23, 35, 45, 124
Antenna pattern, 16, 24, 36, 46, 12
5,132 film sheets, 51 cassettes, 5
2,53 recess, 61 personal computer, 62 reader / writer, 71,92 tuning circuit, 72,79,93,10
0 amplifying circuit, 73, 94 demodulating circuit, 74, 95
Communication control circuit, 75, 96 microcomputer, 76, 97
ROM, 77 EEPROM, 78, 99 modulation circuit,
80 power supply circuit, 91 antenna, 98 RAM
Claims (4)
との間で情報の送受信を行う記憶装置において、 電気的な絶縁機能を有する多層構造の絶縁手段と、 前記絶縁手段上に実装され、情報の記憶および処理を行
う情報処理手段と、 多層構造の前記絶縁手段上にそれぞれループ状に形成さ
れ、前記外部装置からの電波を受信するか、または前記
情報処理手段からの信号を電波によって送信する送受信
手段と、 前記絶縁手段上であって、ループ状の前記送受信手段の
内側に形成された磁束を集中させる磁束集中手段とを備
えることを特徴とする記憶装置。1. A storage device that stores and processes information and transmits and receives information to and from an external device, comprising: a multi-layer insulating unit having an electrical insulating function; Information processing means for storing and processing information; and a loop formed on the insulating means having a multilayer structure, respectively, for receiving a radio wave from the external device or transmitting a signal from the information processing means by a radio wave And a magnetic flux concentrating means for concentrating a magnetic flux formed inside the loop-shaped transmitting / receiving means on the insulating means.
手段は重ならない位置に配置されていることを特徴とす
る請求項1に記載の記憶装置。2. The storage device according to claim 1, wherein said insulating means has two layers, and said transmitting / receiving means is arranged at a position not overlapping.
および前記送受信手段と同一の平面上に形成されること
を特徴とする請求項1に記載の記憶装置。3. The storage device according to claim 1, wherein said magnetic flux concentration means is formed on the same plane as said information processing means and said transmission / reception means.
されていることを特徴とする請求項1に記載の記憶装
置。4. The storage device according to claim 1, wherein said magnetic flux concentration means is formed in an inverted U-shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10220023A JP2000059260A (en) | 1998-08-04 | 1998-08-04 | Storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10220023A JP2000059260A (en) | 1998-08-04 | 1998-08-04 | Storage device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000059260A true JP2000059260A (en) | 2000-02-25 |
Family
ID=16744733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10220023A Withdrawn JP2000059260A (en) | 1998-08-04 | 1998-08-04 | Storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2000059260A (en) |
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US6471129B2 (en) * | 1997-10-17 | 2002-10-29 | Micron Technology, Inc. | Method of fabricating a remote intelligent communications device |
US6795339B2 (en) | 2002-02-18 | 2004-09-21 | Renesas Technology Corp. | Thin film magnetic memory device having communication function, and distribution management system and manufacturing step management system each using thereof |
US6950074B2 (en) | 2001-01-26 | 2005-09-27 | Sony Corporation | Noncontact type IC card |
JP2006041986A (en) * | 2004-07-28 | 2006-02-09 | Matsushita Electric Ind Co Ltd | Antenna device |
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