JP1741185S - semiconductor element - Google Patents
semiconductor elementInfo
- Publication number
- JP1741185S JP1741185S JP2022023715F JP2022023715F JP1741185S JP 1741185 S JP1741185 S JP 1741185S JP 2022023715 F JP2022023715 F JP 2022023715F JP 2022023715 F JP2022023715 F JP 2022023715F JP 1741185 S JP1741185 S JP 1741185S
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- called
- sbds
- electrodes
- shapes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
Abstract
この意匠に係る物品は、いわゆるSBD(Schottky Barrier Diode)と称されることのある半導体素子である。本物品は、電極の一部を複数の略山形状に形成することにより、従来のSBDと比べ、順方向電圧を低くすることができる。An article according to this design is a semiconductor device sometimes called a so-called SBD (Schottky Barrier Diode). The present article can lower the forward voltage compared to conventional SBDs by forming part of the electrodes in a plurality of substantially mountain-like shapes.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022023715F JP1741185S (en) | 2022-11-01 | 2022-11-01 | semiconductor element |
| US29/874,879 USD1043594S1 (en) | 2022-11-01 | 2023-04-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022023715F JP1741185S (en) | 2022-11-01 | 2022-11-01 | semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP1741185S true JP1741185S (en) | 2023-04-06 |
Family
ID=85777486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022023715F Active JP1741185S (en) | 2022-11-01 | 2022-11-01 | semiconductor element |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | USD1043594S1 (en) |
| JP (1) | JP1741185S (en) |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06173081A (en) * | 1992-12-03 | 1994-06-21 | Murata Mfg Co Ltd | Electronic parts |
| USD406822S (en) * | 1997-03-06 | 1999-03-16 | Siemens Aktiengesellschaft | Carrier element for a semiconductor chip for integration into a chipcard, or a chipcard module |
| TW473882B (en) * | 1998-07-06 | 2002-01-21 | Hitachi Ltd | Semiconductor device |
| JP3842444B2 (en) * | 1998-07-24 | 2006-11-08 | 富士通株式会社 | Manufacturing method of semiconductor device |
| USD456367S1 (en) * | 2000-12-15 | 2002-04-30 | Protek Devices, Lp | Semiconductor chip |
| USD480371S1 (en) * | 2001-11-30 | 2003-10-07 | Kabushiki Kaisha Toshiba | Semiconductor device |
| USD475355S1 (en) * | 2002-03-11 | 2003-06-03 | Kabushiki Kaisha Toshiba | Semiconductor device |
| TWD101174S1 (en) * | 2002-03-11 | 2004-11-01 | 東芝股份有限公司 | Semiconductor Components (IV) |
| USD475982S1 (en) * | 2002-03-11 | 2003-06-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
| USD489338S1 (en) * | 2003-07-28 | 2004-05-04 | Semiconductor Components Industries, L.L.C. | Packaged semiconductor device |
| USD509810S1 (en) * | 2003-07-30 | 2005-09-20 | Delta Electronics Inc. | Molding structure of electric element |
| JP4294405B2 (en) * | 2003-07-31 | 2009-07-15 | 株式会社ルネサステクノロジ | Semiconductor device |
| USD510728S1 (en) * | 2004-08-11 | 2005-10-18 | Semiconductor Components Industries Llc | Semiconductor device package |
| USD504874S1 (en) * | 2004-08-11 | 2005-05-10 | Semiconductor Components Industries, Llc | Semiconductor device package |
| USD648290S1 (en) * | 2010-06-08 | 2011-11-08 | Miyoshi Electronics Corporation | Semiconductor device |
| USD756317S1 (en) * | 2014-08-26 | 2016-05-17 | Féinics Amatech Teoranta | Layout for contact pads and connection bridges of a transponder chip module |
| USD768115S1 (en) * | 2015-02-05 | 2016-10-04 | Armen E. Kazanchian | Module |
| JP1577498S (en) * | 2016-09-30 | 2017-05-29 | ||
| JP1580899S (en) * | 2016-11-15 | 2017-07-10 | ||
| JP1577511S (en) * | 2016-11-15 | 2017-05-29 | ||
| JP1584883S (en) * | 2017-01-31 | 2017-08-28 | ||
| JP1584651S (en) * | 2017-01-31 | 2017-08-28 | ||
| USD887998S1 (en) * | 2017-02-17 | 2020-06-23 | Stat Peel Ag | Chip |
| USD853978S1 (en) * | 2017-02-28 | 2019-07-16 | Infineon Technologies Ag | High-performance semiconductor module |
| JP1695980S (en) * | 2021-03-09 | 2021-09-27 |
-
2022
- 2022-11-01 JP JP2022023715F patent/JP1741185S/en active Active
-
2023
- 2023-04-26 US US29/874,879 patent/USD1043594S1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| USD1043594S1 (en) | 2024-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5696083B2 (en) | Nitride semiconductor device and manufacturing method thereof | |
| JP5575816B2 (en) | Composite type semiconductor device | |
| Matioli et al. | Ultralow leakage current AlGaN/GaN Schottky diodes with 3-D anode structure | |
| JP2015165541A (en) | Semiconductor device | |
| JP2015228495A5 (en) | ||
| MY182669A (en) | Semiconductor device and method of manufacturing the same | |
| JP5715604B2 (en) | Power semiconductor device | |
| CN104167450B (en) | Semi-floating-gate power device | |
| JP2015153785A5 (en) | ||
| JP2014187320A5 (en) | ||
| JP2018010929A5 (en) | ||
| CN108807524B (en) | Semiconductor device and method of manufacturing the same | |
| JP2014093525A5 (en) | ||
| JP2014176290A5 (en) | ||
| JP1741186S (en) | semiconductor element | |
| JP1741185S (en) | semiconductor element | |
| JP1741184S (en) | semiconductor device | |
| CN103872147B (en) | Schottky-barrier diode and its manufacture method | |
| JP1741242S (en) | semiconductor element | |
| JP2015061065A (en) | Semiconductor device and manufacturing method thereof | |
| JP1696315S (en) | Power semiconductor device | |
| CN205544903U (en) | Topological structure of SJ -MOS pipe circuit | |
| Han et al. | Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode | |
| Ma et al. | Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain | |
| CN205542798U (en) | Field effect diode |