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ITTO920929A0 - Dispositivo a semiconduttore e procedimento per la sua fabbricazione. - Google Patents

Dispositivo a semiconduttore e procedimento per la sua fabbricazione.

Info

Publication number
ITTO920929A0
ITTO920929A0 IT92TO929A ITTO920929A ITTO920929A0 IT TO920929 A0 ITTO920929 A0 IT TO920929A0 IT 92TO929 A IT92TO929 A IT 92TO929A IT TO920929 A ITTO920929 A IT TO920929A IT TO920929 A0 ITTO920929 A0 IT TO920929A0
Authority
IT
Italy
Prior art keywords
procedure
manufacture
semiconductor device
semiconductor
Prior art date
Application number
IT92TO929A
Other languages
English (en)
Inventor
Takuoa Matsusako
Kazumasa Satsuma
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITTO920929A0 publication Critical patent/ITTO920929A0/it
Publication of ITTO920929A1 publication Critical patent/ITTO920929A1/it
Application granted granted Critical
Publication of IT1258717B publication Critical patent/IT1258717B/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
ITTO920929A 1991-11-25 1992-11-17 Dispositivo a semiconduttore e procedimento per la sua fabbricazione. IT1258717B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3308946A JP2721607B2 (ja) 1991-11-25 1991-11-25 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
ITTO920929A0 true ITTO920929A0 (it) 1992-11-17
ITTO920929A1 ITTO920929A1 (it) 1994-05-17
IT1258717B IT1258717B (it) 1996-02-27

Family

ID=17987160

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO920929A IT1258717B (it) 1991-11-25 1992-11-17 Dispositivo a semiconduttore e procedimento per la sua fabbricazione.

Country Status (4)

Country Link
US (1) US5489793A (it)
JP (1) JP2721607B2 (it)
DE (1) DE4239463C2 (it)
IT (1) IT1258717B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213943A (ja) * 1996-01-29 1997-08-15 Mitsubishi Electric Corp パワーｍｏｓｆｅｔの製造方法
US6870206B2 (en) 2001-11-27 2005-03-22 Infineon Technologies Ag Semiconductor chip, fabrication method, and device for fabricating a semiconductor chip
DE10209073A1 (de) * 2002-02-28 2003-09-18 Infineon Technologies Ag Halbleiterchip, sowie Verfahren und Vorrichtung zur Herstellung des Halbleiterchips

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4197632A (en) * 1975-12-05 1980-04-15 Nippon Electric Co., Ltd. Semiconductor device
JPS5268376A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor device
US4144493A (en) * 1976-06-30 1979-03-13 International Business Machines Corporation Integrated circuit test structure
US4413271A (en) * 1981-03-30 1983-11-01 Sprague Electric Company Integrated circuit including test portion and method for making
DE3850790T2 (de) * 1987-02-09 1994-12-22 Fujitsu Ltd Gatematrix mit in Verbindungsgebiet begrabenem Transistor.
JP2776549B2 (ja) * 1989-04-03 1998-07-16 日本電気アイシーマイコンシステム 株式会社 半導体集積回路
JPH03104169A (ja) * 1989-09-18 1991-05-01 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
DE4239463C2 (de) 1995-01-26
JP2721607B2 (ja) 1998-03-04
JPH05144906A (ja) 1993-06-11
US5489793A (en) 1996-02-06
IT1258717B (it) 1996-02-27
ITTO920929A1 (it) 1994-05-17
DE4239463A1 (en) 1993-05-27

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129