ITRM910243A0 - Mezzi a ridondanza per un dispositivo di memoria a semiconduttori e relativo procedimento - Google Patents

Mezzi a ridondanza per un dispositivo di memoria a semiconduttori e relativo procedimento

Info

Publication number: ITRM910243A0
Authority: IT; Italy
Prior art keywords: memory device; semiconductor memory; related procedure; redundancy means; redundancy
Prior art date: 1990-12-22

Application number

IT91RM243A

Other languages

English (en)

Inventor

Yong-Sik Seok

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-12-22

Filing date

1991-04-10

Publication date

1991-04-10

1991-04-10 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

1991-04-10 Publication of ITRM910243A0 publication Critical patent/ITRM910243A0/it

1992-10-10 Publication of ITRM910243A1 publication Critical patent/ITRM910243A1/it

1994-09-13 Application granted granted Critical

1994-09-13 Publication of IT1244971B publication Critical patent/IT1244971B/it

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/781—Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

ITRM910243A 1990-12-22 1991-04-10 Mezzi a ridondanza per un dispositivo di memoria a semiconduttori e relativo procedimento IT1244971B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019900021502A KR940008208B1 (ko)	1990-12-22	1990-12-22	반도체 메모리장치의 리던던트 장치 및 방법

Publications (3)

Publication Number	Publication Date
ITRM910243A0 true ITRM910243A0 (it)	1991-04-10
ITRM910243A1 ITRM910243A1 (it)	1992-10-10
IT1244971B IT1244971B (it)	1994-09-13

Family

ID=19308222

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ITRM910243A IT1244971B (it)	1990-12-22	1991-04-10	Mezzi a ridondanza per un dispositivo di memoria a semiconduttori e relativo procedimento

Country Status (9)

Country	Link
US (1)	US5255234A (it)
JP (1)	JPH076598A (it)
KR (1)	KR940008208B1 (it)
CN (1)	CN1023266C (it)
DE (1)	DE4111708A1 (it)
FR (1)	FR2670943B1 (it)
GB (1)	GB2251101B (it)
IT (1)	IT1244971B (it)
NL (1)	NL9100620A (it)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR950001837B1 (ko) *	1992-07-13	1995-03-03	삼성전자주식회사	퓨우즈 박스를 공유하는 로우 리던던시 회로
US5557618A (en) *	1993-01-19	1996-09-17	Tektronix, Inc.	Signal sampling circuit with redundancy
JP3257860B2 (ja) *	1993-05-17	2002-02-18	株式会社日立製作所	半導体メモリ装置
JP3273440B2 (ja) *	1994-10-19	2002-04-08	マイクロン・テクノロジー・インコーポレーテッド	部分的に良好なメモリ集積回路から使用可能な部分を得るための効率的な方法
KR0140177B1 (ko) *	1994-12-29	1998-07-15	김광호	반도체메모리소자의 메모리셀어레이의 배열방법
JP3036411B2 (ja) *	1995-10-18	2000-04-24	日本電気株式会社	半導体記憶集積回路装置
US5946257A (en) *	1996-07-24	1999-08-31	Micron Technology, Inc.	Selective power distribution circuit for an integrated circuit
US5970013A (en) *	1998-02-26	1999-10-19	Lucent Technologies Inc.	Adaptive addressable circuit redundancy method and apparatus with broadcast write
US6011733A (en) *	1998-02-26	2000-01-04	Lucent Technologies Inc.	Adaptive addressable circuit redundancy method and apparatus
US6438672B1 (en)	1999-06-03	2002-08-20	Agere Systems Guardian Corp.	Memory aliasing method and apparatus
US6188624B1 (en) *	1999-07-12	2001-02-13	Winbond Electronics Corporation	Low latency memory sensing circuits
US7095642B1 (en) *	2003-03-27	2006-08-22	Cypress Semiconductor Corporation	Method and circuit for reducing defect current from array element failures in random access memories
JPWO2005081260A1 (ja) *	2004-02-20	2008-01-17	スパンションエルエルシー	半導体記憶装置および半導体記憶装置の冗長方法
WO2005081261A1 (ja) *	2004-02-20	2005-09-01	Spansion Llc	半導体記憶装置および半導体記憶装置の冗長制御方法
US7042765B2 (en) *	2004-08-06	2006-05-09	Freescale Semiconductor, Inc.	Memory bit line segment isolation
US8072834B2 (en)	2005-08-25	2011-12-06	Cypress Semiconductor Corporation	Line driver circuit and method with standby mode of operation
JP4781783B2 (ja) *	2005-10-31	2011-09-28	エルピーダメモリ株式会社	半導体記憶装置
KR100675299B1 (ko) *	2006-02-15	2007-01-29	삼성전자주식회사	반도체 메모리 장치 및 이 장치의 데이터 라이트 및 리드방법
US7505319B2 (en) *	2007-01-31	2009-03-17	Taiwan Semiconductor Manufacturing Company, Ltd.	Method and apparatus for high efficiency redundancy scheme for multi-segment SRAM
US20110134707A1 (en) *	2007-11-02	2011-06-09	Saeng Hwan Kim	Block isolation control circuit
JP5539916B2 (ja) *	2011-03-04	2014-07-02	ルネサスエレクトロニクス株式会社	半導体装置
US9478316B1 (en) *	2016-01-08	2016-10-25	SK Hynix Inc.	Memory device
CN116072168B (zh)	2021-10-29	2025-08-29	长鑫存储技术有限公司	存储器结构以及存储器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4228528B2 (en) *	1979-02-09	1992-10-06		Memory with redundant rows and columns
JPS563499A (en) *	1979-06-25	1981-01-14	Fujitsu Ltd	Semiconductor memory device
US4281398A (en) *	1980-02-12	1981-07-28	Mostek Corporation	Block redundancy for memory array
US4389715A (en) *	1980-10-06	1983-06-21	Inmos Corporation	Redundancy scheme for a dynamic RAM
JPS6141186A (ja) *	1984-08-01	1986-02-27	松下電器産業株式会社	カラ−デ−タ同時書込み装置
ES8708009A1 (es) *	1984-11-07	1987-09-01	Procter & Gamble	Un metodo para preparar una composicion detergente liquida
JPS6226695A (ja) *	1985-07-26	1987-02-04	Nec Corp	半導体メモリ
JP2590897B2 (ja) *	1987-07-20	1997-03-12	日本電気株式会社	半導体メモリ
JPH01119995A (ja) *	1987-11-02	1989-05-12	Toshiba Corp	半導体メモリ
US4807191A (en) *	1988-01-04	1989-02-21	Motorola, Inc.	Redundancy for a block-architecture memory
US5022006A (en) *	1988-04-01	1991-06-04	International Business Machines Corporation	Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells
FR2644924A1 (fr) *	1989-03-23	1990-09-28	Sgs Thomson Microelectronics	Circuit de selection d'une colonne redondante dans une memoire integree avec redondance de colonnes de donnees

1990
- 1990-12-22 KR KR1019900021502A patent/KR940008208B1/ko not_active Expired - Fee Related
1991
- 1991-03-25 US US07/674,387 patent/US5255234A/en not_active Expired - Lifetime
- 1991-04-02 FR FR9103948A patent/FR2670943B1/fr not_active Expired - Lifetime
- 1991-04-09 NL NL9100620A patent/NL9100620A/nl not_active Application Discontinuation
- 1991-04-10 CN CN91102517A patent/CN1023266C/zh not_active Expired - Lifetime
- 1991-04-10 DE DE4111708A patent/DE4111708A1/de active Granted
- 1991-04-10 IT ITRM910243A patent/IT1244971B/it active IP Right Grant
- 1991-04-10 GB GB9107618A patent/GB2251101B/en not_active Expired - Lifetime
- 1991-11-22 JP JP3307539A patent/JPH076598A/ja active Pending

Also Published As

Publication number	Publication date
FR2670943B1 (fr)	1994-05-13
KR920013470A (ko)	1992-07-29
ITRM910243A1 (it)	1992-10-10
GB2251101A (en)	1992-06-24
KR940008208B1 (ko)	1994-09-08
IT1244971B (it)	1994-09-13
CN1023266C (zh)	1993-12-22
NL9100620A (nl)	1992-07-16
DE4111708C2 (it)	1993-04-22
GB9107618D0 (en)	1991-05-29
FR2670943A1 (fr)	1992-06-26
JPH076598A (ja)	1995-01-10
DE4111708A1 (de)	1992-07-02
US5255234A (en)	1993-10-19
GB2251101B (en)	1995-03-22
CN1062613A (zh)	1992-07-08

Publication	Publication Date	Title
ITRM910243A0 (it)	1991-04-10	Mezzi a ridondanza per un dispositivo di memoria a semiconduttori e relativo procedimento
DE69232525D1 (de)	2002-05-02	Halbleiterspeicheranordnung
DE69430683D1 (de)	2002-07-04	Halbleiterspeicheranordnung
ITMI910107A0 (it)	1991-01-18	Dispositivo di memoria a semiconduttore
DE69224315D1 (de)	1998-03-12	Halbleiterspeichervorrichtung
ITMI911218A1 (it)	1992-11-03	Dispositivo a semiconduttore di memoria non volatile
DE69233305D1 (de)	2004-03-25	Halbleiterspeichervorrichtung
DE69123666D1 (de)	1997-01-30	Halbleiterspeicheranordnung
DE69331562D1 (de)	2002-03-21	Halbleiterspeicheranordnung
DE69121801D1 (de)	1996-10-10	Halbleiterspeicheranordnung
DE69123379D1 (de)	1997-01-16	Halbleiterspeichervorrichtung
DE69433288D1 (de)	2003-12-04	Halbleiterspeicheranordnung
DE69220101D1 (de)	1997-07-10	Halbleiterspeichereinrichtung
DE69219518D1 (de)	1997-06-12	Halbleiterspeicheranordnung
DE69222793D1 (de)	1997-11-27	Halbleiterspeicheranordnung
ITMI921295A0 (it)	1992-05-26	Dispositivo di memoria a semiconduttore e procedimento per la sua fabbricazione
DE69225298D1 (de)	1998-06-04	Halbleiterspeichervorrichtung
DE69223333D1 (de)	1998-01-15	Halbleiterspeicheranordnung
DE69123294D1 (de)	1997-01-09	Halbleiterspeicheranordnung
ITMI912808A1 (it)	1993-04-23	Dispositivo di memoria a semiconduttore
DE69215555D1 (de)	1997-01-16	Halbleiterspeicheranordnung
IT1274305B (it)	1997-07-17	Dispositivo a semiconduttore di memoria
DE69122293D1 (de)	1996-10-31	Halbleiterspeicheranordnung
DE69332420D1 (de)	2002-11-21	Halbleiterspeicheranordnung
DE69222333D1 (de)	1997-10-30	Halbleiterspeicheranordnung

Legal Events

Date	Code	Title	Description
1994-09-13	0001	Granted
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19970328