ITMI920155A1 - Apparecchiatura per provare automaticamente un modo di sollecitazione di un dispositivo di memoria a semiconduttore - Google Patents

Apparecchiatura per provare automaticamente un modo di sollecitazione di un dispositivo di memoria a semiconduttore

Info

Publication number: ITMI920155A1
Authority: IT; Italy
Prior art keywords: memory device; semiconductor memory; solicitation; equipment; voltage
Prior art date: 1991-08-23

Application number

IT000155A

Other languages

English (en)

Inventor

Jin-Man Han

Jong-Hoon Lee

Original Assignee

Samsung Electronics Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-08-23

Filing date

1992-01-28

Publication date

1993-07-28

1992-01-28 Application filed by Samsung Electronics Ltd filed Critical Samsung Electronics Ltd

1992-01-28 Publication of ITMI920155A0 publication Critical patent/ITMI920155A0/it

1993-07-28 Publication of ITMI920155A1 publication Critical patent/ITMI920155A1/it

1996-04-09 Application granted granted Critical

1996-04-09 Publication of IT1260463B publication Critical patent/IT1260463B/it

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/317—Testing of digital circuits
- G01R31/31701—Arrangements for setting the Unit Under Test [UUT] in a test mode
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/46—Test trigger logic
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/30—Marginal testing, e.g. by varying supply voltage
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/81—Threshold

Landscapes

Engineering & Computer Science (AREA)
General Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
For Increasing The Reliability Of Semiconductor Memories (AREA)
Dram (AREA)
Tests Of Electronic Circuits (AREA)
Read Only Memory (AREA)
Credit Cards Or The Like (AREA)
Static Random-Access Memory (AREA)

ITMI920155A 1991-08-23 1992-01-28 Apparecchiatura per provare automaticamente un modo di sollecitazione di un dispositivo di memoria a semiconduttore IT1260463B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
KR1019910014663A KR940004408B1 (ko)	1991-08-23	1991-08-23	반도체 메모리 장치의 자동 스트레스 모드 테스트장치

Publications (3)

Publication Number	Publication Date
ITMI920155A0 ITMI920155A0 (it)	1992-01-28
ITMI920155A1 true ITMI920155A1 (it)	1993-07-28
IT1260463B IT1260463B (it)	1996-04-09

Family

ID=19319041

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ITMI920155A IT1260463B (it)	1991-08-23	1992-01-28	Apparecchiatura per provare automaticamente un modo di sollecitazione di un dispositivo di memoria a semiconduttore

Country Status (10)

Country	Link
US (1)	US5367491A (it)
JP (1)	JPH0581900A (it)
KR (1)	KR940004408B1 (it)
CN (1)	CN1069821A (it)
DE (1)	DE4201516C2 (it)
FR (1)	FR2680596B1 (it)
GB (1)	GB2258924A (it)
IT (1)	IT1260463B (it)
NL (1)	NL9200168A (it)
TW (1)	TW218050B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5532618A (en) *	1992-11-30	1996-07-02	United Memories, Inc.	Stress mode circuit for an integrated circuit with on-chip voltage down converter
US5497348A (en) *	1994-05-31	1996-03-05	Texas Instruments Incorporated	Burn-in detection circuit
US5610363A (en) *	1995-02-15	1997-03-11	The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration	Enhanced whipple shield
KR0179820B1 (ko) *	1996-02-01	1999-04-15	문정환	반도체 메모리의 번인 감지 회로
US5974577A (en) *	1996-04-24	1999-10-26	Micron Technology, Inc.	Integrated circuit with voltage over-stress indicating circuit
US5841714A (en) *	1996-10-21	1998-11-24	Micron Technology, Inc.	Supervoltage circuit
EP1026696B1 (en) *	1999-02-02	2005-07-06	Fujitsu Limited	Test method and test circuit for electronic device
US6392472B1 (en) *	1999-06-18	2002-05-21	Mitsubishi Denki Kabushiki Kaisha	Constant internal voltage generation circuit
DE10058779A1 (de) *	2000-11-27	2002-06-13	Infineon Technologies Ag	Vorrichtung zum Stressen einer integrierten ferroelektrischen Halbleiterspeicherschaltung
KR100385959B1 (ko) *	2001-05-31	2003-06-02	삼성전자주식회사	반도체 메모리장치의 내부전압 발생회로 및 내부전압발생방법
KR100452334B1 (ko) *	2002-10-30	2004-10-12	삼성전자주식회사	반도체 메모리 장치의 모드진입 제어회로 및 모드진입 방법
US7619459B2 (en) *	2006-03-17	2009-11-17	Aeroflex Colorado Springs Inc.	High speed voltage translator circuit
US7583108B2 (en)	2006-03-17	2009-09-01	Aeroflex Colorado Springs Inc.	Current comparator using wide swing current mirrors
KR100904962B1 (ko) *	2007-05-31	2009-06-26	삼성전자주식회사	스트레스 검출 회로, 이를 포함하는 반도체 칩 및 스트레스검출 방법
EP2775371B1 (en) *	2013-03-04	2021-01-27	Dialog Semiconductor GmbH	Current control for output device biasing stage
CN104101763B (zh) *	2013-04-03	2017-11-14	中芯国际集成电路制造(上海)有限公司	一种芯片上传感器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2201535B (en) *	1987-02-25	1990-11-28	Motorola Inc	Cmos analog multiplying circuit
JPS6455857A (en) *	1987-08-26	1989-03-02	Nec Corp	Semiconductor integrated device
FR2628217B1 (fr) *	1988-03-07	1990-07-27	Sgs Thomson Microelectronics	Circuit de mesure d'un courant
JP2854305B2 (ja) *	1988-10-07	1999-02-03	株式会社日立製作所	半導体記憶装置と半導体記憶装置の動作方法
JPH02177194A (ja) *	1988-12-28	1990-07-10	Mitsubishi Electric Corp	ダイナミックランダムアクセスメモリ装置
JPH07105160B2 (ja) *	1989-05-20	1995-11-13	東芝マイクロエレクトロニクス株式会社	半導体記憶装置
US5087834A (en) *	1990-03-12	1992-02-11	Texas Instruments Incorporated	Buffer circuit including comparison of voltage-shifted references
US5134587A (en) *	1990-08-17	1992-07-28	Sgs-Thomson Microelectronics, Inc.	Semiconductor memory with automatic test mode exit on chip enable
US5132560A (en) *	1990-09-28	1992-07-21	Siemens Corporate Research, Inc.	Voltage comparator with automatic output-level adjustment

1991
- 1991-08-23 KR KR1019910014663A patent/KR940004408B1/ko not_active Expired - Fee Related
- 1991-12-16 TW TW080109831A patent/TW218050B/zh active
- 1991-12-17 FR FR9115634A patent/FR2680596B1/fr not_active Expired - Fee Related
1992
- 1992-01-21 DE DE4201516A patent/DE4201516C2/de not_active Expired - Fee Related
- 1992-01-27 US US07/825,947 patent/US5367491A/en not_active Expired - Lifetime
- 1992-01-28 IT ITMI920155A patent/IT1260463B/it active IP Right Grant
- 1992-01-30 NL NL9200168A patent/NL9200168A/nl not_active Application Discontinuation
- 1992-01-31 CN CN 92100721 patent/CN1069821A/zh active Pending
- 1992-01-31 JP JP4016168A patent/JPH0581900A/ja active Pending
- 1992-01-31 GB GB9202099A patent/GB2258924A/en not_active Withdrawn

Also Published As

Publication number	Publication date
IT1260463B (it)	1996-04-09
FR2680596A1 (fr)	1993-02-26
CN1069821A (zh)	1993-03-10
KR930005037A (ko)	1993-03-23
GB2258924A (en)	1993-02-24
GB9202099D0 (en)	1992-03-18
ITMI920155A0 (it)	1992-01-28
FR2680596B1 (fr)	1993-11-19
DE4201516A1 (de)	1993-02-25
NL9200168A (nl)	1993-03-16
KR940004408B1 (ko)	1994-05-25
DE4201516C2 (de)	1994-04-14
US5367491A (en)	1994-11-22
JPH0581900A (ja)	1993-04-02
TW218050B (it)	1993-12-21

Publication	Publication Date	Title
ITMI920155A1 (it)	1993-07-28	Apparecchiatura per provare automaticamente un modo di sollecitazione di un dispositivo di memoria a semiconduttore
DE69025990D1 (de)	1996-04-25	Bipolarer Transistor mit isolierter Steuerelektrode und Verfahren zu dessen Herstellung
IT1256203B (it)	1995-11-29	Circuito per generare tensione di substrato e tensione pompata in elevazione con un singolo oscillatore
IS3873A (is)	1992-12-04	Hliðstæð aðferð til framleiðslu á kristölluðum oxaþíólan afleiðum
CA2323682A1 (en)	2001-07-28	Pulsed cathodic protection system and method
DE69127799D1 (de)	1997-11-06	Kunststoffgekapseltes Halbleiterbauteil und Verfahren zu dessen Herstellung
DE69327860D1 (de)	2000-03-23	Verbindungshalbleiterbauelement und Verfahren zu seiner Herstellung
IN159046B (it)	1987-03-14
DE69113673D1 (de)	1995-11-16	Halbleiterbauelement mit MOS-Transistoren und Verfahren zu dessen Herstellung.
IT8026497A0 (it)	1980-12-05	Procedimento e dispositivo per variare la spaziatura fra impulsi di comando di accensione forniti da un generatore di impulsi di accensione.
JPS5389306A (en)	1978-08-05	Dc current supplying circuit
NL7614273A (nl)	1978-06-26	Inrichting voor het beveiligen van elektrische-, in het bijzonder telecommunicatiesysteem tegen over- spanningspulsen.
DE69206166D1 (de)	1996-01-04	Verfahren zum Herstellen eines supraleitenden NB3SN Drahtes.
ATE273045T1 (de)	2004-08-15	Kardiale defibrillierung
JPS51132533A (en)	1976-11-17	Device for automatically raising and lowering window
DE59208833D1 (de)	1997-10-02	Leistungs-halbleiterbauelement und verfahren zu dessen herstellung
JPS53102683A (en)	1978-09-07	Semiconductor device
JPS5351425A (en)	1978-05-10	Voltage raise circuit
JPS546757A (en)	1979-01-19	Serial connection circuit for transistor
JPS547869A (en)	1979-01-20	Lead bending method of semiconductor device
JPS556942A (en)	1980-01-18	Power control circuit
JPS51134582A (en)	1976-11-22	Semiconductor device
JPS566520A (en)	1981-01-23	Oscillating device
SU577019A1 (ru)	1977-10-25	Устройство дл проведени спиц к компрессионно-дистракционному аппарату
JPS5249508A (en)	1977-04-20	Rail supporting device

Legal Events

Date	Code	Title	Description
1996-04-09	0001	Granted
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19960529