IT1239459B - METHOD TO REDUCE DEGRADATION DUE TO HOT ELECTRONS IN SEMICONDUCTOR DEVICES - Google Patents

METHOD TO REDUCE DEGRADATION DUE TO HOT ELECTRONS IN SEMICONDUCTOR DEVICES

Info

Publication number: IT1239459B
Authority: IT; Italy
Prior art keywords: semiconductor devices; degradation due; hot electrons; reduce degradation; reduce
Prior art date: 1989-03-22

Application number

IT19716A

Other languages

Italian (it)

Other versions

IT9019716A1 (en

IT9019716A0 (en

Inventor

Stefan K Lai

Daniel N Tang

Simon Y Wang

Susan L Kao

Baylor B Triplett

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-03-22

Filing date

1990-03-19

Publication date

1993-11-02

1990-03-19 Application filed by Intel Corp filed Critical Intel Corp

1990-03-19 Publication of IT9019716A0 publication Critical patent/IT9019716A0/en

1991-09-19 Publication of IT9019716A1 publication Critical patent/IT9019716A1/en

1993-11-02 Application granted granted Critical

1993-11-02 Publication of IT1239459B publication Critical patent/IT1239459B/en

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
- H10W20/425—

IT19716A 1989-03-22 1990-03-19 METHOD TO REDUCE DEGRADATION DUE TO HOT ELECTRONS IN SEMICONDUCTOR DEVICES IT1239459B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US32730289A	1989-03-22	1989-03-22

Publications (3)

Publication Number	Publication Date
IT9019716A0 IT9019716A0 (en)	1990-03-19
IT9019716A1 IT9019716A1 (en)	1991-09-19
IT1239459B true IT1239459B (en)	1993-11-02

Family

ID=23276001

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT19716A IT1239459B (en)	1989-03-22	1990-03-19	METHOD TO REDUCE DEGRADATION DUE TO HOT ELECTRONS IN SEMICONDUCTOR DEVICES

Country Status (6)

Country	Link
JP (1)	JPH02281663A (en)
DE (1)	DE4007895C2 (en)
FR (1)	FR2644934A1 (en)
GB (1)	GB2229575B (en)
HK (1)	HK1000976A1 (en)
IT (1)	IT1239459B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR960015322B1 (en) *	1993-07-23	1996-11-07	현대전자산업 주식회사	Method for manufacturing semiconductor elements
JP2003297956A (en)	2002-04-04	2003-10-17	Toshiba Corp	Semiconductor storage device and method of manufacturing the same
JP4212299B2 (en)	2002-05-09	2009-01-21	株式会社東芝	Nonvolatile semiconductor memory device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3879746A (en) *	1972-05-30	1975-04-22	Bell Telephone Labor Inc	Gate metallization structure
US4288256A (en) *	1977-12-23	1981-09-08	International Business Machines Corporation	Method of making FET containing stacked gates
WO1981000487A1 (en) *	1979-08-13	1981-02-19	Ncr Co	Hydrogen annealing process for silicon gate memory device
JP2515715B2 (en) *	1984-02-24	1996-07-10	株式会社日立製作所	Method for manufacturing semiconductor integrated circuit device
US4566026A (en) *	1984-04-25	1986-01-21	Honeywell Inc.	Integrated circuit bimetal layer
US4743564A (en) *	1984-12-28	1988-05-10	Kabushiki Kaisha Toshiba	Method for manufacturing a complementary MOS type semiconductor device
JPS62143476A (en) *	1985-12-18	1987-06-26	Fujitsu Ltd	semiconductor storage device
US4707721A (en) *	1986-02-20	1987-11-17	Texas Instruments Incorporated	Passivated dual dielectric gate system and method for fabricating same
IT1201840B (en) *	1986-08-28	1989-02-02	Sgs Microelettronica Spa	METHOD-SEMICONDUCTOR OHMIC CONTACTS PROCEDURE
CA1306072C (en) *	1987-03-30	1992-08-04	John E. Cronin	Refractory metal - titanium nitride conductive structures and processes for forming the same
US4824803A (en) *	1987-06-22	1989-04-25	Standard Microsystems Corporation	Multilayer metallization method for integrated circuits

1990
- 1990-01-08 GB GB9000360A patent/GB2229575B/en not_active Expired - Lifetime
- 1990-03-13 DE DE4007895A patent/DE4007895C2/en not_active Expired - Lifetime
- 1990-03-19 IT IT19716A patent/IT1239459B/en active IP Right Grant
- 1990-03-20 FR FR9003536A patent/FR2644934A1/en not_active Withdrawn
- 1990-03-22 JP JP2069896A patent/JPH02281663A/en active Pending
1997
- 1997-12-23 HK HK97102597A patent/HK1000976A1/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
HK1000976A1 (en)	1998-05-15
GB9000360D0 (en)	1990-03-07
FR2644934A1 (en)	1990-09-28
IT9019716A1 (en)	1991-09-19
JPH02281663A (en)	1990-11-19
IT9019716A0 (en)	1990-03-19
DE4007895C2 (en)	2000-03-30
DE4007895A1 (en)	1990-09-27
GB2229575A (en)	1990-09-26
GB2229575B (en)	1993-05-12

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Legal Events

Date	Code	Title	Description
1993-11-02	0001	Granted
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19980327