GB2229575B - Method of reducing hot-electron degradation in semiconductor devices - Google Patents

Method of reducing hot-electron degradation in semiconductor devices

Info

Publication number: GB2229575B
Authority: GB; United Kingdom
Prior art keywords: semiconductor devices; reducing hot; electron degradation; degradation; electron
Prior art date: 1989-03-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

GB9000360A

Other versions

GB9000360D0 (en

GB2229575A (en

Inventor

Stefan K Lai

Daniel N Tang

Simon Y Wang

Susan L Kao

Baylor B Triplett

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Intel Corp

Original Assignee

Intel Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-03-22

Filing date

1990-01-08

Publication date

1993-05-12

1990-01-08 Application filed by Intel Corp filed Critical Intel Corp

1990-03-07 Publication of GB9000360D0 publication Critical patent/GB9000360D0/en

1990-09-26 Publication of GB2229575A publication Critical patent/GB2229575A/en

1993-05-12 Application granted granted Critical

1993-05-12 Publication of GB2229575B publication Critical patent/GB2229575B/en

2010-01-08 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
- H10W20/425—

GB9000360A 1989-03-22 1990-01-08 Method of reducing hot-electron degradation in semiconductor devices Expired - Lifetime GB2229575B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US32730289A	1989-03-22	1989-03-22

Publications (3)

Publication Number	Publication Date
GB9000360D0 GB9000360D0 (en)	1990-03-07
GB2229575A GB2229575A (en)	1990-09-26
GB2229575B true GB2229575B (en)	1993-05-12

Family

ID=23276001

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB9000360A Expired - Lifetime GB2229575B (en)	1989-03-22	1990-01-08	Method of reducing hot-electron degradation in semiconductor devices

Country Status (5)

Country	Link
JP (1)	JPH02281663A (en)
DE (1)	DE4007895C2 (en)
FR (1)	FR2644934A1 (en)
GB (1)	GB2229575B (en)
IT (1)	IT1239459B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR960015322B1 (en) *	1993-07-23	1996-11-07	현대전자산업 주식회사	Method for manufacturing semiconductor elements
JP2003297956A (en)	2002-04-04	2003-10-17	Toshiba Corp	Semiconductor storage device and method of manufacturing the same
JP4212299B2 (en)	2002-05-09	2009-01-21	株式会社東芝	Nonvolatile semiconductor memory device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3879746A (en) *	1972-05-30	1975-04-22	Bell Telephone Labor Inc	Gate metallization structure
WO1981000487A1 (en) *	1979-08-13	1981-02-19	Ncr Co	Hydrogen annealing process for silicon gate memory device
EP0227549A2 (en) *	1985-12-18	1987-07-01	Fujitsu Limited	Semiconductor memory device including read only memory element for storing fixed information
US4707721A (en) *	1986-02-20	1987-11-17	Texas Instruments Incorporated	Passivated dual dielectric gate system and method for fabricating same
EP0284794A1 (en) *	1987-03-30	1988-10-05	International Business Machines Corporation	Refractory metal - titanium nitride conductive structures and processes for forming the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4288256A (en) *	1977-12-23	1981-09-08	International Business Machines Corporation	Method of making FET containing stacked gates
JP2515715B2 (en) *	1984-02-24	1996-07-10	株式会社日立製作所	Method for manufacturing semiconductor integrated circuit device
US4566026A (en) *	1984-04-25	1986-01-21	Honeywell Inc.	Integrated circuit bimetal layer
US4743564A (en) *	1984-12-28	1988-05-10	Kabushiki Kaisha Toshiba	Method for manufacturing a complementary MOS type semiconductor device
IT1201840B (en) *	1986-08-28	1989-02-02	Sgs Microelettronica Spa	METHOD-SEMICONDUCTOR OHMIC CONTACTS PROCEDURE
US4824803A (en) *	1987-06-22	1989-04-25	Standard Microsystems Corporation	Multilayer metallization method for integrated circuits

1990
- 1990-01-08 GB GB9000360A patent/GB2229575B/en not_active Expired - Lifetime
- 1990-03-13 DE DE4007895A patent/DE4007895C2/en not_active Expired - Lifetime
- 1990-03-19 IT IT19716A patent/IT1239459B/en active IP Right Grant
- 1990-03-20 FR FR9003536A patent/FR2644934A1/en not_active Withdrawn
- 1990-03-22 JP JP2069896A patent/JPH02281663A/en active Pending

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3879746A (en) *	1972-05-30	1975-04-22	Bell Telephone Labor Inc	Gate metallization structure
WO1981000487A1 (en) *	1979-08-13	1981-02-19	Ncr Co	Hydrogen annealing process for silicon gate memory device
EP0227549A2 (en) *	1985-12-18	1987-07-01	Fujitsu Limited	Semiconductor memory device including read only memory element for storing fixed information
US4707721A (en) *	1986-02-20	1987-11-17	Texas Instruments Incorporated	Passivated dual dielectric gate system and method for fabricating same
EP0284794A1 (en) *	1987-03-30	1988-10-05	International Business Machines Corporation	Refractory metal - titanium nitride conductive structures and processes for forming the same

Also Published As

Publication number	Publication date
DE4007895C2 (en)	2000-03-30
IT1239459B (en)	1993-11-02
IT9019716A0 (en)	1990-03-19
JPH02281663A (en)	1990-11-19
DE4007895A1 (en)	1990-09-27
IT9019716A1 (en)	1991-09-19
FR2644934A1 (en)	1990-09-28
GB9000360D0 (en)	1990-03-07
HK1000976A1 (en)	1998-05-15
GB2229575A (en)	1990-09-26

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Legal Events

Date	Code	Title	Description
2010-01-27	PE20	Patent expired after termination of 20 years	Expiry date: 20100107