IT1244119B - Processo di introduzione e diffusione di ioni di platino in una fetta di silicio - Google Patents

Processo di introduzione e diffusione di ioni di platino in una fetta di silicio

Info

Publication number: IT1244119B
Authority: IT; Italy
Prior art keywords: slice; diffusion; introduction; silicon; platinum ions
Prior art date: 1990-11-29

Application number

IT02223790A

Other languages

English (en)

Other versions

IT9022237A1 (it

IT9022237A0 (it

Inventor

Ferruccio Frisina

Nella Tavolo

Mario Raspagliesi

Original Assignee

Cons Ric Microelettronica

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-11-29

Filing date

1990-11-29

Publication date

1994-07-05

1990-11-29 Application filed by Cons Ric Microelettronica filed Critical Cons Ric Microelettronica

1990-11-29 Priority to IT02223790A priority Critical patent/IT1244119B/it

1990-11-29 Publication of IT9022237A0 publication Critical patent/IT9022237A0/it

1991-11-16 Priority to DE69117889T priority patent/DE69117889T2/de

1991-11-16 Priority to EP91202986A priority patent/EP0488440B1/en

1991-11-19 Priority to US07/794,390 priority patent/US5227315A/en

1991-11-22 Priority to JP30736791A priority patent/JP3213357B2/ja

1992-05-30 Publication of IT9022237A1 publication Critical patent/IT9022237A1/it

1994-07-05 Application granted granted Critical

1994-07-05 Publication of IT1244119B publication Critical patent/IT1244119B/it

Classifications

- H10P32/18—
- H10P30/204—
- H10P30/208—
- H10P32/171—
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel

IT02223790A 1990-11-29 1990-11-29 Processo di introduzione e diffusione di ioni di platino in una fetta di silicio IT1244119B (it)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
IT02223790A IT1244119B (it)	1990-11-29	1990-11-29	Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
DE69117889T DE69117889T2 (de)	1990-11-29	1991-11-16	Verfahren zur Einführung und Diffundierung von Platin-Ionen in einem Siliziumplättchen
EP91202986A EP0488440B1 (en)	1990-11-29	1991-11-16	Process of introduction and diffusion of platinum ions in a slice of silicon
US07/794,390 US5227315A (en)	1990-11-29	1991-11-19	Process of introduction and diffusion of platinum ions in a slice of silicon
JP30736791A JP3213357B2 (ja)	1990-11-29	1991-11-22	シリコンスライス内に白金イオンを導入および拡散する方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
IT02223790A IT1244119B (it)	1990-11-29	1990-11-29	Processo di introduzione e diffusione di ioni di platino in una fetta di silicio

Publications (3)

Publication Number	Publication Date
IT9022237A0 IT9022237A0 (it)	1990-11-29
IT9022237A1 IT9022237A1 (it)	1992-05-30
IT1244119B true IT1244119B (it)	1994-07-05

Family

ID=11193497

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT02223790A IT1244119B (it)	1990-11-29	1990-11-29	Processo di introduzione e diffusione di ioni di platino in una fetta di silicio

Country Status (5)

Country	Link
US (1)	US5227315A (it)
EP (1)	EP0488440B1 (it)
JP (1)	JP3213357B2 (it)
DE (1)	DE69117889T2 (it)
IT (1)	IT1244119B (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5262336A (en) *	1986-03-21	1993-11-16	Advanced Power Technology, Inc.	IGBT process to produce platinum lifetime control
TW232751B (en)	1992-10-09	1994-10-21	Semiconductor Energy Res Co Ltd	Semiconductor device and method for forming the same
US6624477B1 (en)	1992-10-09	2003-09-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP3637069B2 (ja)	1993-03-12	2005-04-06	株式会社半導体エネルギー研究所	半導体装置の作製方法
CN1095204C (zh) *	1993-03-12	2002-11-27	株式会社半导体能源研究所	半导体器件和晶体管
EP0675527B1 (en) *	1994-03-30	1999-11-10	Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno	Manufacturing process for obtaining bipolar transistors with controlled storage time
US6008092A (en) *	1996-02-12	1999-12-28	International Rectifier Corporation	Short channel IGBT with improved forward voltage drop and improved switching power loss
US5747371A (en) *	1996-07-22	1998-05-05	Motorola, Inc.	Method of manufacturing vertical MOSFET
EP0913872A1 (en) *	1997-10-29	1999-05-06	Motorola Semiconducteurs S.A.	Insulated gate bipolar transistor
JP5061407B2 (ja) *	2001-01-31	2012-10-31	富士電機株式会社	半導体装置およびその製造方法
WO2003088280A1 (en) *	2002-04-08	2003-10-23	Council Of Scientific And Industrial Research	Process for the production of neodymium-iron-boron permanent magnet alloy powder
DE102007020039B4 (de) *	2007-04-27	2011-07-14	Infineon Technologies Austria Ag	Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement
US8794501B2 (en)	2011-11-18	2014-08-05	LuxVue Technology Corporation	Method of transferring a light emitting diode
US8333860B1 (en)	2011-11-18	2012-12-18	LuxVue Technology Corporation	Method of transferring a micro device
US8922611B1 (en)	2013-10-09	2014-12-30	Markem-Imaje Corporation	Apparatus and method for thermal transfer printing
CN105874607B (zh) *	2014-07-17	2019-07-12	富士电机株式会社	半导体装置以及半导体装置的制造方法
US9209027B1 (en) *	2014-08-14	2015-12-08	Infineon Technologies Ag	Adjusting the charge carrier lifetime in a bipolar semiconductor device
CN113178385B (zh) *	2021-03-31	2022-12-23	青岛惠科微电子有限公司	一种芯片的制造方法、制造设备和芯片
CN113223953B (zh) *	2021-03-31	2022-09-27	青岛惠科微电子有限公司	一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113223944B (zh) *	2021-03-31	2022-09-27	青岛惠科微电子有限公司	一种快恢复芯片的制造方法、制造设备和快恢复芯片

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2341311C3 (de) *	1973-08-16	1981-07-09	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern
US4165517A (en) *	1977-02-28	1979-08-21	Electric Power Research Institute, Inc.	Self-protection against breakover turn-on failure in thyristors through selective base lifetime control
US4137370A (en) *	1977-08-16	1979-01-30	The United States Of America As Represented By The Secretary Of The Air Force	Titanium and titanium alloys ion plated with noble metals and their alloys
DE3131914A1 (de) *	1981-08-12	1983-02-24	Siemens AG, 1000 Berlin und 8000 München	Leistungs-mos-feldeffekttransistor und verfahren zu seiner herstellung
JPS5975662A (ja) *	1982-10-22	1984-04-28	Nec Corp	サイリスタ
JPS6084881A (ja) *	1983-10-17	1985-05-14	Toshiba Corp	大電力ｍｏｓ　ｆｅｔとその製造方法
JPS6143474A (ja) *	1984-08-08	1986-03-03	Toshiba Corp	半導体装置
US4620211A (en) *	1984-08-13	1986-10-28	General Electric Company	Method of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devices
JPS6262557A (ja) *	1985-09-12	1987-03-19	Fuji Electric Co Ltd	半導体装置
US4717588A (en) *	1985-12-23	1988-01-05	Motorola Inc.	Metal redistribution by rapid thermal processing
US4742017A (en) *	1986-06-20	1988-05-03	Ford Aerospace Corporation	Implantation method for forming Schottky barrier photodiodes
US4875082A (en) *	1986-06-20	1989-10-17	Ford Aerospace Corporation	Schottky barrier photodiode structure
US4855799A (en) *	1987-12-22	1989-08-08	Kabushiki Kaisha Toshiba	Power MOS FET with carrier lifetime killer
FR2638892B1 (fr) *	1988-11-09	1992-12-24	Sgs Thomson Microelectronics	Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
US4925812A (en) *	1989-09-21	1990-05-15	International Rectifier Corporation	Platinum diffusion process

1990
- 1990-11-29 IT IT02223790A patent/IT1244119B/it active IP Right Grant
1991
- 1991-11-16 EP EP91202986A patent/EP0488440B1/en not_active Expired - Lifetime
- 1991-11-16 DE DE69117889T patent/DE69117889T2/de not_active Expired - Fee Related
- 1991-11-19 US US07/794,390 patent/US5227315A/en not_active Expired - Lifetime
- 1991-11-22 JP JP30736791A patent/JP3213357B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH07111329A (ja)	1995-04-25
US5227315A (en)	1993-07-13
EP0488440A2 (en)	1992-06-03
EP0488440B1 (en)	1996-03-13
DE69117889D1 (de)	1996-04-18
DE69117889T2 (de)	1996-09-05
IT9022237A1 (it)	1992-05-30
EP0488440A3 (en)	1992-10-28
IT9022237A0 (it)	1990-11-29
JP3213357B2 (ja)	2001-10-02

Publication	Publication Date	Title
IT1244119B (it)	1994-07-05	Processo di introduzione e diffusione di ioni di platino in una fetta di silicio
BR8704506A (pt)	1988-04-19	Processo de formacao de pelicula em sementes e dispositivo
PT97381A (pt)	1993-05-31	Processo de fabricacao de embolo e embolo
BR9007919A (pt)	1992-10-06	Construcao de queimador e processo de fabricacao do mesmo
BR8804926A (pt)	1989-05-02	Dispositivo de filtracao e processo de fabricacao do mesmo
BR9504561A (pt)	1997-02-25	Processo de fabricaçao de restriçao e restriçao
BR9610739A (pt)	1999-07-13	Célula solar e processo para sua fabricação
IT1261194B (it)	1996-05-09	Apparecchio e procedimento di incapsulamento in gelatina.
IT8883655A0 (it)	1988-08-04	Processo per la fabbricazione di dispositivi integrati cmos con lunghezze di gate ridotte e drain leggermente drogato
BR8900800A (pt)	1989-10-17	Pino terminal eletrico e processo de fabricacao do mesmo
IT1246685B (it)	1994-11-25	Processo di diffusione del platino
KR880701620A (ko)	1988-11-04	분극물질 및 이의 제조방법
BR9000776A (pt)	1991-01-22	Multiplicador e processo de multiplicacao
BR8503017A (pt)	1986-03-11	Dispositivo fotovoltaicos estaveis e processo de fabricacao dos mesmos
DE69132786D1 (de)	2001-11-29	IEEE488-Schnittstelle und Nachrichtenverarbeitungsverfahren
BR9201590A (pt)	1992-12-01	Macaco e processo de fabricacao de um macaco
BR8604468A (pt)	1987-05-19	Indutor em miniatura ajustavel e seu processo de fabricacao
FI905886A7 (fi)	1990-11-29	Plasmakäsittelymenetelmä ja -laite
KR910001906A (ko)	1991-01-31	플라즈마 처리장치 및 방법
BR8705514A (pt)	1988-05-24	Processo de preparacao de fonte plana de dopante em estado solido e fonte plana de dopante de antimonio em estado solido
BR9300764A (pt)	1993-09-28	Processo e agente anti-tumor
PT85971A (pt)	1988-11-30	Peugas de tamanho unico e seu processo de fabrico
BR8600892A (pt)	1987-09-08	Bucha helicoidal e processo de sua fabricacao
BR8903766A (pt)	1990-03-20	Composicao de silicone e processo de tratamento de aguas
KR900008640A (ko)	1990-06-03	웨이퍼 처리공정을 위한 균일폭 트렌치 및 이의 제조방법

Legal Events

Date	Code	Title	Description
1994-07-05	0001	Granted
1999-10-27	TA	Fee payment date (situation as of event date), data collected since 19931001	Effective date: 19971129