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IT1112216B - Transistore ad effetto di campo,a porta isolata,presentante una struttura di porta,di tipo chiuso,con caratteristiche di rottura a valanga controllate - Google Patents

Transistore ad effetto di campo,a porta isolata,presentante una struttura di porta,di tipo chiuso,con caratteristiche di rottura a valanga controllate

Info

Publication number
IT1112216B
IT1112216B IT21725/79A IT2172579A IT1112216B IT 1112216 B IT1112216 B IT 1112216B IT 21725/79 A IT21725/79 A IT 21725/79A IT 2172579 A IT2172579 A IT 2172579A IT 1112216 B IT1112216 B IT 1112216B
Authority
IT
Italy
Prior art keywords
door
presenting
effect transistor
field
closed type
Prior art date
Application number
IT21725/79A
Other languages
English (en)
Other versions
IT7921725A0 (it
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7921725A0 publication Critical patent/IT7921725A0/it
Application granted granted Critical
Publication of IT1112216B publication Critical patent/IT1112216B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
IT21725/79A 1978-05-09 1979-04-10 Transistore ad effetto di campo,a porta isolata,presentante una struttura di porta,di tipo chiuso,con caratteristiche di rottura a valanga controllate IT1112216B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/904,454 US4173022A (en) 1978-05-09 1978-05-09 Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics

Publications (2)

Publication Number Publication Date
IT7921725A0 IT7921725A0 (it) 1979-04-10
IT1112216B true IT1112216B (it) 1986-01-13

Family

ID=25419190

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21725/79A IT1112216B (it) 1978-05-09 1979-04-10 Transistore ad effetto di campo,a porta isolata,presentante una struttura di porta,di tipo chiuso,con caratteristiche di rottura a valanga controllate

Country Status (5)

Country Link
US (1) US4173022A (it)
JP (1) JPS54147787A (it)
DE (1) DE2917690C3 (it)
GB (1) GB2020484B (it)
IT (1) IT1112216B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US4342045A (en) * 1980-04-28 1982-07-27 Advanced Micro Devices, Inc. Input protection device for integrated circuits
JPS59228764A (ja) * 1983-06-10 1984-12-22 Seiko Epson Corp 半導体装置
JPS6010677A (ja) * 1983-06-30 1985-01-19 Nissan Motor Co Ltd 縦型ｍｏｓトランジスタ
US4684967A (en) * 1984-05-04 1987-08-04 Integrated Logic Systems, Inc. Low capacitance transistor cell element and transistor array
FR2617642A1 (fr) * 1987-06-30 1989-01-06 Thomson Semiconducteurs Transistor a effet de champ
JPH07321306A (ja) * 1994-03-31 1995-12-08 Seiko Instr Inc 半導体装置およびその製造方法
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5683918A (en) * 1996-04-01 1997-11-04 Motorola, Inc. Method of making semiconductor-on-insulator device with closed-gate electrode
US5726844A (en) * 1996-04-01 1998-03-10 Motorola, Inc. Protection circuit and a circuit for a semiconductor-on-insulator device
TW406315B (en) * 1997-06-30 2000-09-21 Siemens Ag Closed transistor with small W/L ratios
US6046897A (en) * 1997-09-29 2000-04-04 Motorola, Inc. Segmented bus architecture (SBA) for electrostatic discharge (ESD) protection
US6883894B2 (en) 2001-03-19 2005-04-26 Hewlett-Packard Development Company, L.P. Printhead with looped gate transistor structures
US8492866B1 (en) 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301882A (it) * 1962-12-17
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
GB1175601A (en) * 1966-03-28 1969-12-23 Matsushita Electronics Corp Insulated-Gate Field-Effect Transistor
NL6808352A (it) * 1968-06-14 1969-12-16
GB1373960A (en) * 1971-12-07 1974-11-13 Texas Instruments Ltd Field effect transistors
GB1527773A (en) * 1974-10-18 1978-10-11 Matsushita Electric Industrial Co Ltd Mos type semiconductor device
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors

Also Published As

Publication number Publication date
IT7921725A0 (it) 1979-04-10
DE2917690B2 (de) 1981-02-19
JPS54147787A (en) 1979-11-19
DE2917690C3 (de) 1984-03-15
GB2020484B (en) 1982-09-15
DE2917690A1 (de) 1979-11-15
GB2020484A (en) 1979-11-14
US4173022A (en) 1979-10-30

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