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IT1188465B - Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione - Google Patents

Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione

Info

Publication number
IT1188465B
IT1188465B IT19906/86A IT1990686A IT1188465B IT 1188465 B IT1188465 B IT 1188465B IT 19906/86 A IT19906/86 A IT 19906/86A IT 1990686 A IT1990686 A IT 1990686A IT 1188465 B IT1188465 B IT 1188465B
Authority
IT
Italy
Prior art keywords
procedure
manufacture
high voltage
integrated circuits
semiconductor integrated
Prior art date
Application number
IT19906/86A
Other languages
English (en)
Other versions
IT8619906A0 (it
IT8619906A1 (it
Inventor
Antonio Andreini
Claudio Contiero
Paolo Galbiati
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT19906/86A priority Critical patent/IT1188465B/it
Publication of IT8619906A0 publication Critical patent/IT8619906A0/it
Priority to US07/028,842 priority patent/US4892836A/en
Priority to EP87104271A priority patent/EP0239060B1/en
Priority to DE3751313T priority patent/DE3751313T2/de
Priority to JP62073939A priority patent/JP2814079B2/ja
Publication of IT8619906A1 publication Critical patent/IT8619906A1/it
Application granted granted Critical
Publication of IT1188465B publication Critical patent/IT1188465B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/0142—Manufacturing their gate conductors the gate conductors having different shapes or dimensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0163—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including enhancement-mode IGFETs and depletion-mode IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS
    • H10P76/40—
IT19906/86A 1986-03-27 1986-03-27 Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione IT1188465B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT19906/86A IT1188465B (it) 1986-03-27 1986-03-27 Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione
US07/028,842 US4892836A (en) 1986-03-27 1987-03-23 Method for manufacturing semiconductor integrated circuits including CMOS and high-voltage electronic devices
EP87104271A EP0239060B1 (en) 1986-03-27 1987-03-24 Method for manufacturing semiconductor integrated circuits including cmos and high-voltage electronic devices
DE3751313T DE3751313T2 (de) 1986-03-27 1987-03-24 Verfahren zur Herstellung von CMOS- und Hochspannungs-elektronische-bauelemente beinhaltende Halbleiterbauelemente.
JP62073939A JP2814079B2 (ja) 1986-03-27 1987-03-26 半導体集積回路とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19906/86A IT1188465B (it) 1986-03-27 1986-03-27 Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione

Publications (3)

Publication Number Publication Date
IT8619906A0 IT8619906A0 (it) 1986-03-27
IT8619906A1 IT8619906A1 (it) 1987-09-27
IT1188465B true IT1188465B (it) 1988-01-14

Family

ID=11162231

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19906/86A IT1188465B (it) 1986-03-27 1986-03-27 Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione

Country Status (5)

Country Link
US (1) US4892836A (it)
EP (1) EP0239060B1 (it)
JP (1) JP2814079B2 (it)
DE (1) DE3751313T2 (it)
IT (1) IT1188465B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
US5011784A (en) * 1988-01-21 1991-04-30 Exar Corporation Method of making a complementary BiCMOS process with isolated vertical PNP transistors
US5116777A (en) * 1990-04-30 1992-05-26 Sgs-Thomson Microelectronics, Inc. Method for fabricating semiconductor devices by use of an N+ buried layer for complete isolation
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit
EP0683521B1 (en) * 1994-05-19 2002-08-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power integrated circuit ("PIC") structure, and manufacturing process thereof
EP0751573A1 (en) * 1995-06-30 1997-01-02 STMicroelectronics S.r.l. Integrated power circuit and corresponding manufacturing process
US5602046A (en) * 1996-04-12 1997-02-11 National Semiconductor Corporation Integrated zener diode protection structures and fabrication methods for DMOS power devices
US5770880A (en) * 1996-09-03 1998-06-23 Harris Corporation P-collector H.V. PMOS switch VT adjusted source/drain
JP5096708B2 (ja) * 2006-07-28 2012-12-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30282A (en) * 1860-10-09 Quartz crusher and amalgamator
US4054899A (en) * 1970-09-03 1977-10-18 Texas Instruments Incorporated Process for fabricating monolithic circuits having matched complementary transistors and product
US4021270A (en) * 1976-06-28 1977-05-03 Motorola, Inc. Double master mask process for integrated circuit manufacture
USRE30282E (en) 1976-06-28 1980-05-27 Motorola, Inc. Double master mask process for integrated circuit manufacture
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
US4325180A (en) * 1979-02-15 1982-04-20 Texas Instruments Incorporated Process for monolithic integration of logic, control, and high voltage interface circuitry
US4346512A (en) * 1980-05-05 1982-08-31 Raytheon Company Integrated circuit manufacturing method
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
JPH061816B2 (ja) * 1983-09-30 1994-01-05 日本電気株式会社 半導体装置の製造方法
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication

Also Published As

Publication number Publication date
DE3751313D1 (de) 1995-06-29
EP0239060B1 (en) 1995-05-24
EP0239060A3 (en) 1989-11-15
IT8619906A0 (it) 1986-03-27
JP2814079B2 (ja) 1998-10-22
JPS62237757A (ja) 1987-10-17
EP0239060A2 (en) 1987-09-30
US4892836A (en) 1990-01-09
DE3751313T2 (de) 1996-02-01
IT8619906A1 (it) 1987-09-27

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970329