IT1099381B - MOS TRANSISTOR CURRENT MIRRORS, WITH ELONGATED DISCHARGES - Google Patents

MOS TRANSISTOR CURRENT MIRRORS, WITH ELONGATED DISCHARGES

Info

Publication number: IT1099381B
Authority: IT; Italy
Prior art keywords: discharges; elongated; mos transistor; current mirrors; transistor current
Prior art date: 1978-01-09

Application number

IT28651/78A

Other languages

Italian (it)

Other versions

IT7828651A0 (en

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-01-09

Filing date

1978-10-11

Publication date

1985-09-18

1978-10-11 Application filed by Rca Corp filed Critical Rca Corp

1978-10-11 Publication of IT7828651A0 publication Critical patent/IT7828651A0/en

1985-09-18 Application granted granted Critical

1985-09-18 Publication of IT1099381B publication Critical patent/IT1099381B/en

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/836—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising EDMOS

IT28651/78A 1978-01-09 1978-10-11 MOS TRANSISTOR CURRENT MIRRORS, WITH ELONGATED DISCHARGES IT1099381B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB65978		1978-01-09

Publications (2)

Publication Number	Publication Date
IT7828651A0 IT7828651A0 (en)	1978-10-11
IT1099381B true IT1099381B (en)	1985-09-18

Family

ID=9708247

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT28651/78A IT1099381B (en)	1978-01-09	1978-10-11	MOS TRANSISTOR CURRENT MIRRORS, WITH ELONGATED DISCHARGES

Country Status (3)

Country	Link
JP (1)	JPS5940295B2 (en)
DE (1)	DE2900639C3 (en)
IT (1)	IT1099381B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4477782A (en) *	1983-05-13	1984-10-16	At&T Bell Laboratories	Compound current mirror
NL8302731A (en) *	1983-08-02	1985-03-01	Philips Nv	SEMICONDUCTOR DEVICE.
JP2014067912A (en) *	2012-09-26	2014-04-17	Seiko Instruments Inc	Current mirror circuit
JP6058960B2 (en) *	2012-09-27	2017-01-11	エスアイアイ・セミコンダクタ株式会社	Current mirror circuit

1978
- 1978-10-11 IT IT28651/78A patent/IT1099381B/en active
1979
- 1979-01-05 JP JP54000570A patent/JPS5940295B2/en not_active Expired
- 1979-01-09 DE DE2900639A patent/DE2900639C3/en not_active Expired

Also Published As

Publication number	Publication date
DE2900639A1 (en)	1979-07-12
IT7828651A0 (en)	1978-10-11
DE2900639B2 (en)	1980-03-20
DE2900639C3 (en)	1980-12-04
JPS5940295B2 (en)	1984-09-29
JPS5498165A (en)	1979-08-02

Publication	Publication Date	Title
BE857191A (en)	1978-01-27	NEWS 1,2,4,5-TETRAHYDRO-3H-2-BENZAZEPINE-3-ONES
NL177265C (en)	1985-08-16	LIGHT-EMITING SEMICONDUCTOR UNIT.
IT1074338B (en)	1985-04-20	DOUBLE INJECTION STATION
NL7901339A (en)	1979-08-28	SEMICONDUCTOR HIGH VOLTAGE SWITCH.
IT1084723B (en)	1985-05-28	WASTE CONSTIPATOR
NL7706420A (en)	1977-12-13	TOOTHBRUSH.
NL7702141A (en)	1977-09-05	VELDEFFEKT TRANSISTOR.
NO803871L (en)	1981-06-22	TOOTHPASTE.
IT7926449A0 (en)	1979-10-12	STORAGE TRANSISTOR.
NL7705970A (en)	1977-12-02	TOOTHBRUSH.
NO148358C (en)	1983-09-28	Toothpaste.
BE853027A (en)	1977-07-18	N-OXY-AMIDINO-UREES NEWS
BE850688A (en)	1977-07-25	NEWS 1,2-BENZISOTHIAZOLINONES-3
NL7811898A (en)	1979-06-11	TOOTHPASTE.
BE859987A (en)	1978-04-21	NEWS AZA-8 PURINONES-6
IT7923518A0 (en)	1979-06-13	CURRENT LIMITING DEVICE.
NL7901855A (en)	1979-09-12	TRANSISTOR.
NO803869L (en)	1981-06-22	Toothpaste.
DE3177128D1 (en)	1990-01-04	INTEGRATED POWER TRANSISTOR ARRANGEMENT.
NO803870L (en)	1981-06-22	Toothpaste.
NL7903744A (en)	1979-12-04	TOOTHPASTE.
NL7803607A (en)	1979-10-09	VOLTAGE REFERENCE CIRCUIT.
IT1099381B (en)	1985-09-18	MOS TRANSISTOR CURRENT MIRRORS, WITH ELONGATED DISCHARGES
NL7611310A (en)	1977-09-19	RIPPLE CAP.
NL7903191A (en)	1979-11-27	TOOTHPASTE.