IT1087185B - Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dt - Google Patents
Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dtInfo
- Publication number
- IT1087185B IT1087185B IT28595/77A IT2859577A IT1087185B IT 1087185 B IT1087185 B IT 1087185B IT 28595/77 A IT28595/77 A IT 28595/77A IT 2859577 A IT2859577 A IT 2859577A IT 1087185 B IT1087185 B IT 1087185B
- Authority
- IT
- Italy
- Prior art keywords
- control electrode
- controlled rectifier
- high sensitivity
- high capacity
- capacity
- Prior art date
Links
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73320576A | 1976-10-18 | 1976-10-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1087185B true IT1087185B (it) | 1985-05-31 |
Family
ID=24946651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT28595/77A IT1087185B (it) | 1976-10-18 | 1977-10-14 | Raddrizzatore controllato avente alta sensibilita' di elettrodo di comando e alta capacita' di dv/dt |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS584828B2 (it) |
| DE (1) | DE2746406C2 (it) |
| FR (1) | FR2368146A1 (it) |
| GB (1) | GB1573234A (it) |
| IT (1) | IT1087185B (it) |
| SE (1) | SE431806B (it) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57204163A (en) * | 1981-06-11 | 1982-12-14 | Toyo Electric Mfg Co Ltd | Semiconductor device |
| JPS583283A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | サイリスタ |
| JPS5998556A (ja) * | 1982-11-26 | 1984-06-06 | Mitsubishi Electric Corp | 光トリガサイリスタ |
| GB2150347B (en) * | 1983-11-21 | 1987-02-25 | Westinghouse Brake & Signal | Amplifying gate thyristor with zones of different cathode-gate resistance |
| JPS60192124A (ja) * | 1984-03-09 | 1985-09-30 | Daikin Mfg Co Ltd | ダンパ−デイスクの摩擦装置 |
| JPS63201246U (it) * | 1987-06-17 | 1988-12-26 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611066A (en) * | 1969-12-12 | 1971-10-05 | Gen Electric | Thyristor with integrated ballasted gate auxiliary thyristor portion |
| JPS5021346B1 (it) * | 1970-08-14 | 1975-07-22 | ||
| GB1346074A (en) * | 1971-02-23 | 1974-02-06 | Gen Electric | Gate-controlled thyristors |
| GB1346604A (en) * | 1971-02-26 | 1974-02-13 | Gen Electric | Gate controlled thyristor |
| JPS5229592B2 (it) * | 1971-10-01 | 1977-08-03 | ||
| JPS539516B2 (it) * | 1971-12-29 | 1978-04-06 | ||
| DE2329872C3 (de) * | 1973-06-12 | 1979-04-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| DE2356906A1 (de) * | 1973-11-14 | 1975-05-22 | Siemens Ag | Thyristor |
| CH567803A5 (it) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
| DE2407696C3 (de) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
-
1977
- 1977-10-14 IT IT28595/77A patent/IT1087185B/it active
- 1977-10-15 DE DE2746406A patent/DE2746406C2/de not_active Expired
- 1977-10-17 SE SE7711699A patent/SE431806B/xx not_active IP Right Cessation
- 1977-10-17 FR FR7731185A patent/FR2368146A1/fr active Granted
- 1977-10-18 JP JP52124159A patent/JPS584828B2/ja not_active Expired
- 1977-10-18 GB GB43245/77A patent/GB1573234A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5368083A (en) | 1978-06-17 |
| FR2368146A1 (fr) | 1978-05-12 |
| GB1573234A (en) | 1980-08-20 |
| SE431806B (sv) | 1984-02-27 |
| FR2368146B1 (it) | 1984-01-06 |
| DE2746406A1 (de) | 1978-04-20 |
| SE7711699L (sv) | 1978-04-19 |
| JPS584828B2 (ja) | 1983-01-27 |
| DE2746406C2 (de) | 1983-08-25 |
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