IT1087185B - CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DT - Google Patents
CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DTInfo
- Publication number
- IT1087185B IT1087185B IT28595/77A IT2859577A IT1087185B IT 1087185 B IT1087185 B IT 1087185B IT 28595/77 A IT28595/77 A IT 28595/77A IT 2859577 A IT2859577 A IT 2859577A IT 1087185 B IT1087185 B IT 1087185B
- Authority
- IT
- Italy
- Prior art keywords
- control electrode
- controlled rectifier
- high sensitivity
- high capacity
- capacity
- Prior art date
Links
- 230000035945 sensitivity Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US73320576A | 1976-10-18 | 1976-10-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1087185B true IT1087185B (en) | 1985-05-31 |
Family
ID=24946651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT28595/77A IT1087185B (en) | 1976-10-18 | 1977-10-14 | CONTROLLED RECTIFIER WITH HIGH SENSITIVITY OF CONTROL ELECTRODE AND HIGH CAPACITY OF DV / DT |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS584828B2 (en) |
| DE (1) | DE2746406C2 (en) |
| FR (1) | FR2368146A1 (en) |
| GB (1) | GB1573234A (en) |
| IT (1) | IT1087185B (en) |
| SE (1) | SE431806B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57204163A (en) * | 1981-06-11 | 1982-12-14 | Toyo Electric Mfg Co Ltd | Semiconductor device |
| JPS583283A (en) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | Thyristor |
| JPS5998556A (en) * | 1982-11-26 | 1984-06-06 | Mitsubishi Electric Corp | light triggered thyristor |
| GB2150347B (en) * | 1983-11-21 | 1987-02-25 | Westinghouse Brake & Signal | Amplifying gate thyristor with zones of different cathode-gate resistance |
| JPS60192124A (en) * | 1984-03-09 | 1985-09-30 | Daikin Mfg Co Ltd | Friction device for damper disc |
| JPS63201246U (en) * | 1987-06-17 | 1988-12-26 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3611066A (en) * | 1969-12-12 | 1971-10-05 | Gen Electric | Thyristor with integrated ballasted gate auxiliary thyristor portion |
| JPS5021346B1 (en) * | 1970-08-14 | 1975-07-22 | ||
| GB1346074A (en) * | 1971-02-23 | 1974-02-06 | Gen Electric | Gate-controlled thyristors |
| GB1346604A (en) * | 1971-02-26 | 1974-02-13 | Gen Electric | Gate controlled thyristor |
| JPS5229592B2 (en) * | 1971-10-01 | 1977-08-03 | ||
| JPS539516B2 (en) * | 1971-12-29 | 1978-04-06 | ||
| DE2329872C3 (en) * | 1973-06-12 | 1979-04-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| DE2356906A1 (en) * | 1973-11-14 | 1975-05-22 | Siemens Ag | THYRISTOR |
| CH567803A5 (en) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
| DE2407696C3 (en) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
-
1977
- 1977-10-14 IT IT28595/77A patent/IT1087185B/en active
- 1977-10-15 DE DE2746406A patent/DE2746406C2/en not_active Expired
- 1977-10-17 SE SE7711699A patent/SE431806B/en not_active IP Right Cessation
- 1977-10-17 FR FR7731185A patent/FR2368146A1/en active Granted
- 1977-10-18 JP JP52124159A patent/JPS584828B2/en not_active Expired
- 1977-10-18 GB GB43245/77A patent/GB1573234A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5368083A (en) | 1978-06-17 |
| FR2368146A1 (en) | 1978-05-12 |
| GB1573234A (en) | 1980-08-20 |
| SE431806B (en) | 1984-02-27 |
| FR2368146B1 (en) | 1984-01-06 |
| DE2746406A1 (en) | 1978-04-20 |
| SE7711699L (en) | 1978-04-19 |
| JPS584828B2 (en) | 1983-01-27 |
| DE2746406C2 (en) | 1983-08-25 |
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