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IN2012DN02992A - - Google Patents

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Publication number
IN2012DN02992A
IN2012DN02992A IN2992DEN2012A IN2012DN02992A IN 2012DN02992 A IN2012DN02992 A IN 2012DN02992A IN 2992DEN2012 A IN2992DEN2012 A IN 2992DEN2012A IN 2012DN02992 A IN2012DN02992 A IN 2012DN02992A
Authority
IN
India
Prior art keywords
cadmium
layer
zinc sulfide
telluride layer
cadmium telluride
Prior art date
Application number
Inventor
gloeckler Markus
C Powell Rick
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of IN2012DN02992A publication Critical patent/IN2012DN02992A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A method of manufacturing a photovoltaic device may include forming a cadmium zinc sulfide layer on a substrate; depositing a cadmium telluride layer on the cadmium zinc sulfide layer, contacting a cadmium chlo­ride to the cadmium telluride layer; and annealing one or more layers, where the one or more layers includes at least the cadmium telluride layer.
IN2992DEN2012 2009-10-13 2010-10-12 IN2012DN02992A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25110809P 2009-10-13 2009-10-13
PCT/US2010/052318 WO2011046930A1 (en) 2009-10-13 2010-10-12 Method of annealing cadmium telluride photovoltaic device

Publications (1)

Publication Number Publication Date
IN2012DN02992A true IN2012DN02992A (en) 2015-07-31

Family

ID=43876476

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2992DEN2012 IN2012DN02992A (en) 2009-10-13 2010-10-12

Country Status (5)

Country Link
US (1) US20110088768A1 (en)
CN (1) CN102696118A (en)
IN (1) IN2012DN02992A (en)
TW (1) TW201121089A (en)
WO (1) WO2011046930A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013074306A1 (en) 2011-11-18 2013-05-23 First Solar, Inc. Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules
US9437760B2 (en) 2013-03-15 2016-09-06 First Solar, Inc. Method of reducing semiconductor window layer loss during thin film photovoltaic device fabrication, and resulting device structure
US9799784B2 (en) 2013-03-15 2017-10-24 First Solar, Inc. High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture
TWI550717B (en) 2014-08-25 2016-09-21 新能光電科技股份有限公司 Heat treatment method and product obtained thereby
US10453988B2 (en) 2016-06-03 2019-10-22 University Of Utah Research Foundation Methods for creating cadmium telluride (CdTe) and related alloy film
US12119416B2 (en) * 2018-10-24 2024-10-15 First Solar, Inc. Buffer layers for photovoltaic devices with group V doping
CN112837997B (en) * 2021-01-06 2022-12-13 河南大学 A kind of preparation method of ZnCdS film and the preparation method of copper zinc tin sulfur selenium solar cell

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900000534B1 (en) * 1987-09-25 1990-01-31 한국과학기술원 Manufacturing Method of Cd 소결 _xZnxS Sintered Film
US4950615A (en) * 1989-02-06 1990-08-21 International Solar Electric Technology, Inc. Method and making group IIB metal - telluride films and solar cells
DE4442824C1 (en) * 1994-12-01 1996-01-25 Siemens Ag Solar cell having higher degree of activity
WO1997021252A1 (en) * 1995-12-07 1997-06-12 Japan Energy Corporation Method of producing photoelectric conversion device
US6423565B1 (en) * 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
JP4662616B2 (en) * 2000-10-18 2011-03-30 パナソニック株式会社 Solar cell
WO2002091483A2 (en) * 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
KR20100126717A (en) * 2008-03-04 2010-12-02 솔렉슨트 코포레이션 Manufacturing method of solar cell
WO2009117072A1 (en) * 2008-03-18 2009-09-24 Solexant Corp. Improved back contact in thin solar cells
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
US8084682B2 (en) * 2009-01-21 2011-12-27 Yung-Tin Chen Multiple band gapped cadmium telluride photovoltaic devices and process for making the same

Also Published As

Publication number Publication date
US20110088768A1 (en) 2011-04-21
TW201121089A (en) 2011-06-16
CN102696118A (en) 2012-09-26
WO2011046930A1 (en) 2011-04-21

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