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IN2012DN00357A - - Google Patents

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Publication number
IN2012DN00357A
IN2012DN00357A IN357DEN2012A IN2012DN00357A IN 2012DN00357 A IN2012DN00357 A IN 2012DN00357A IN 357DEN2012 A IN357DEN2012 A IN 357DEN2012A IN 2012DN00357 A IN2012DN00357 A IN 2012DN00357A
Authority
IN
India
Prior art keywords
layer
depositing
zinc
cadmium sulfide
cadmium
Prior art date
Application number
Inventor
C Powell Rick
gloeckler Markus
Buller Benyamin
Shao Rui
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of IN2012DN00357A publication Critical patent/IN2012DN00357A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

A method of manufacturing a photovoltaic cell may include depositing a cadmium sulfide layer on a transparent conductive oxide stack; depositing a zinc-containing layer on the cadmium sulfide layer; and depositing a cadmium telluride layer on the zinc containing layer.
IN357DEN2012 2009-07-10 2010-07-09 IN2012DN00357A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22465809P 2009-07-10 2009-07-10
US22501309P 2009-07-13 2009-07-13
PCT/US2010/041500 WO2011006050A1 (en) 2009-07-10 2010-07-09 Photovoltaic devices including zinc

Publications (1)

Publication Number Publication Date
IN2012DN00357A true IN2012DN00357A (en) 2015-08-21

Family

ID=43426538

Family Applications (1)

Application Number Title Priority Date Filing Date
IN357DEN2012 IN2012DN00357A (en) 2009-07-10 2010-07-09

Country Status (12)

Country Link
US (1) US20110005594A1 (en)
EP (1) EP2452370A4 (en)
JP (1) JP2012533178A (en)
KR (1) KR20120052296A (en)
CN (1) CN102484170A (en)
AU (1) AU2010271339A1 (en)
IL (1) IL217463A0 (en)
IN (1) IN2012DN00357A (en)
MA (1) MA33504B1 (en)
TW (1) TW201108452A (en)
WO (1) WO2011006050A1 (en)
ZA (1) ZA201200354B (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102770969A (en) * 2009-12-21 2012-11-07 第一太阳能有限公司 Photovoltaic device with buffer layer
US20120067414A1 (en) * 2010-09-22 2012-03-22 Chungho Lee CdZnO OR SnZnO BUFFER LAYER FOR SOLAR CELL
WO2012040299A2 (en) 2010-09-22 2012-03-29 First Solar, Inc A thin-film photovoltaic device with a zinc magnesium oxide window layer
US8241930B2 (en) 2011-05-31 2012-08-14 Primestar Solar, Inc. Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
US8188562B2 (en) * 2011-05-31 2012-05-29 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
US8247686B2 (en) 2011-05-31 2012-08-21 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
WO2013059178A1 (en) * 2011-10-17 2013-04-25 First Solar, Inc. Photovoltaic device and method of formation
WO2013074306A1 (en) 2011-11-18 2013-05-23 First Solar, Inc. Method and apparatus providing single step cadmium chloride vapour treatment for photovoltaic modules
US9054245B2 (en) 2012-03-02 2015-06-09 First Solar, Inc. Doping an absorber layer of a photovoltaic device via diffusion from a window layer
WO2014121187A2 (en) 2013-02-01 2014-08-07 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
EP2954562A2 (en) * 2013-02-07 2015-12-16 First Solar, Inc Photovoltaic device with protective layer over a window layer and method of manufacture of the same
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
WO2014210451A2 (en) * 2013-06-28 2014-12-31 First Solar, Inc. Method of manufacturing a photovoltaic device
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
KR101779770B1 (en) * 2016-03-04 2017-09-19 주식회사 아바코 Solar cell and manufacturing method thereof
CN105845759A (en) * 2016-04-15 2016-08-10 武汉锦隆工程技术有限公司 Solar cell and solar barricade with anti-collision alarm function
US11367805B2 (en) * 2016-07-14 2022-06-21 First Solar, Inc. Solar cells and methods of making the same
CN107768451A (en) * 2017-08-31 2018-03-06 成都中建材光电材料有限公司 A kind of cadmium-Te solar battery structure with stannic acid zinc-magnesium layer and preparation method thereof
US12119416B2 (en) 2018-10-24 2024-10-15 First Solar, Inc. Buffer layers for photovoltaic devices with group V doping

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
JPS62203384A (en) * 1986-03-03 1987-09-08 Matsushita Electric Ind Co Ltd Photovoltaic device and manufacture thereof
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
JPH01179743A (en) * 1988-01-08 1989-07-17 Matsushita Electric Ind Co Ltd Production of sintered cds film
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
JPH06350116A (en) * 1993-06-04 1994-12-22 Matsushita Electric Ind Co Ltd Solar battery
JP3497249B2 (en) * 1994-09-16 2004-02-16 松下電池工業株式会社 Solar cell manufacturing method
WO1997021252A1 (en) * 1995-12-07 1997-06-12 Japan Energy Corporation Method of producing photoelectric conversion device
US5972732A (en) * 1997-12-19 1999-10-26 Sandia Corporation Method of monolithic module assembly
US6037241A (en) * 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
US5945163A (en) * 1998-02-19 1999-08-31 First Solar, Llc Apparatus and method for depositing a material on a substrate
ATE374263T1 (en) * 1999-03-29 2007-10-15 Antec Solar Energy Ag DEVICE AND METHOD FOR COATING SUBSTRATES BY VAPOR DEPOSION USING A PVD METHOD
JP2001223376A (en) * 2000-02-10 2001-08-17 Midwest Research Inst Manufacturing method for polycrystal semiconductor thin-film solar battery, and solar battery manufactured thereby
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US20080302418A1 (en) * 2006-03-18 2008-12-11 Benyamin Buller Elongated Photovoltaic Devices in Casings
US9017480B2 (en) * 2006-04-06 2015-04-28 First Solar, Inc. System and method for transport
US8076571B2 (en) * 2006-11-02 2011-12-13 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20090102502A1 (en) * 2007-10-22 2009-04-23 Michel Ranjit Frei Process testers and testing methodology for thin-film photovoltaic devices

Also Published As

Publication number Publication date
IL217463A0 (en) 2012-02-29
ZA201200354B (en) 2012-09-26
JP2012533178A (en) 2012-12-20
AU2010271339A1 (en) 2012-02-16
MA33504B1 (en) 2012-08-01
CN102484170A (en) 2012-05-30
KR20120052296A (en) 2012-05-23
TW201108452A (en) 2011-03-01
WO2011006050A1 (en) 2011-01-13
EP2452370A1 (en) 2012-05-16
AU2010271339A2 (en) 2012-02-16
EP2452370A4 (en) 2013-01-02
US20110005594A1 (en) 2011-01-13

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