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IL149832A0 - Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon - Google Patents

Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Info

Publication number
IL149832A0
IL149832A0 IL14983200A IL14983200A IL149832A0 IL 149832 A0 IL149832 A0 IL 149832A0 IL 14983200 A IL14983200 A IL 14983200A IL 14983200 A IL14983200 A IL 14983200A IL 149832 A0 IL149832 A0 IL 149832A0
Authority
IL
Israel
Prior art keywords
silicon
formation
methods
devices based
wire array
Prior art date
Application number
IL14983200A
Original Assignee
Sceptre Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sceptre Electronics Ltd filed Critical Sceptre Electronics Ltd
Publication of IL149832A0 publication Critical patent/IL149832A0/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/014Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H10P50/20
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812Single quantum well structures
    • H10D62/813Quantum wire structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
IL14983200A 1999-11-25 2000-10-02 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon IL149832A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99124768/28A RU2173003C2 (en) 1999-11-25 1999-11-25 Method for producing silicon nanostructure, lattice of silicon quantum conducting tunnels, and devices built around them
PCT/IB2000/001397 WO2001039259A1 (en) 1999-11-25 2000-10-02 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Publications (1)

Publication Number Publication Date
IL149832A0 true IL149832A0 (en) 2002-11-10

Family

ID=20227346

Family Applications (1)

Application Number Title Priority Date Filing Date
IL14983200A IL149832A0 (en) 1999-11-25 2000-10-02 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon

Country Status (23)

Country Link
US (1) US6274007B1 (en)
EP (1) EP1104011A1 (en)
JP (1) JP2001156050A (en)
KR (1) KR20020069195A (en)
CN (1) CN1399791A (en)
AU (1) AU7547400A (en)
BG (1) BG106739A (en)
BR (1) BR0016095A (en)
CA (1) CA2392307A1 (en)
CZ (1) CZ20021824A3 (en)
EE (1) EE200200261A (en)
HR (1) HRP20020459A2 (en)
HU (1) HUP0203517A2 (en)
IL (1) IL149832A0 (en)
IS (1) IS6393A (en)
MX (1) MXPA02005281A (en)
NO (1) NO20022427L (en)
PL (1) PL355890A1 (en)
RU (1) RU2173003C2 (en)
SK (1) SK7442002A3 (en)
WO (1) WO2001039259A1 (en)
YU (1) YU38202A (en)
ZA (1) ZA200204822B (en)

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US20070020860A1 (en) * 2003-06-26 2007-01-25 Rj Mears, Llc Method for Making Semiconductor Device Including a Strained Superlattice and Overlying Stress Layer and Related Methods
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Also Published As

Publication number Publication date
PL355890A1 (en) 2004-05-31
CZ20021824A3 (en) 2004-10-13
HRP20020459A2 (en) 2005-10-31
KR20020069195A (en) 2002-08-29
EE200200261A (en) 2003-08-15
SK7442002A3 (en) 2003-05-02
JP2001156050A (en) 2001-06-08
CN1399791A (en) 2003-02-26
CA2392307A1 (en) 2001-05-31
WO2001039259A1 (en) 2001-05-31
NO20022427D0 (en) 2002-05-22
BR0016095A (en) 2004-03-23
ZA200204822B (en) 2003-11-26
BG106739A (en) 2003-08-29
EP1104011A1 (en) 2001-05-30
AU7547400A (en) 2001-06-04
NO20022427L (en) 2002-06-25
US6274007B1 (en) 2001-08-14
IS6393A (en) 2002-05-24
RU2173003C2 (en) 2001-08-27
HUP0203517A2 (en) 2003-07-28
YU38202A (en) 2006-08-17
MXPA02005281A (en) 2006-02-10

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