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AU2002224583A1 - Strain-engineered, self-assembled, semiconductor quantum dot lattices - Google Patents

Strain-engineered, self-assembled, semiconductor quantum dot lattices

Info

Publication number
AU2002224583A1
AU2002224583A1 AU2002224583A AU2458302A AU2002224583A1 AU 2002224583 A1 AU2002224583 A1 AU 2002224583A1 AU 2002224583 A AU2002224583 A AU 2002224583A AU 2458302 A AU2458302 A AU 2458302A AU 2002224583 A1 AU2002224583 A1 AU 2002224583A1
Authority
AU
Australia
Prior art keywords
engineered
strain
assembled
self
quantum dot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002224583A
Inventor
Jo Ann Johnson
Hao Lee
Pierre Petroff
James S. Speck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California San Diego UCSD
Original Assignee
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California Berkeley, University of California San Diego UCSD filed Critical University of California Berkeley
Publication of AU2002224583A1 publication Critical patent/AU2002224583A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H10P14/2911—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H10P14/22—
    • H10P14/2925—
    • H10P14/3221—
    • H10P14/3421—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Recrystallisation Techniques (AREA)
AU2002224583A 2000-06-27 2001-06-27 Strain-engineered, self-assembled, semiconductor quantum dot lattices Abandoned AU2002224583A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US21447900P 2000-06-27 2000-06-27
US60214479 2000-06-27
PCT/US2001/020562 WO2002009188A1 (en) 2000-06-27 2001-06-27 Strain-engineered, self-assembled, semiconductor quantum dot lattices

Publications (1)

Publication Number Publication Date
AU2002224583A1 true AU2002224583A1 (en) 2002-02-05

Family

ID=22799227

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002224583A Abandoned AU2002224583A1 (en) 2000-06-27 2001-06-27 Strain-engineered, self-assembled, semiconductor quantum dot lattices

Country Status (3)

Country Link
US (1) US6583436B2 (en)
AU (1) AU2002224583A1 (en)
WO (1) WO2002009188A1 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6816525B2 (en) * 2000-09-22 2004-11-09 Andreas Stintz Quantum dot lasers
FR2815026B1 (en) * 2000-10-06 2004-04-09 Commissariat Energie Atomique METHOD FOR SELF-ORGANIZING MICROSTRUCTURES OR NANOSTRUCTURES AND MICROSTRUCTURE OR NANOSTRUCTURE DEVICE
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6819845B2 (en) * 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US7282732B2 (en) * 2003-10-24 2007-10-16 Stc. Unm Quantum dot structures
WO2005069387A1 (en) * 2004-01-20 2005-07-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US9018515B2 (en) 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
CN1302517C (en) * 2004-03-26 2007-02-28 东南大学 Method of self-organized growth of uniform and ordered semiconductor quantum lattice
WO2005112210A1 (en) * 2004-05-14 2005-11-24 Bookham Technology Plc Semiconductor devices including gratings formed using quantum dots and method of manufacture
US7414294B2 (en) * 2005-12-16 2008-08-19 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
US20070137693A1 (en) * 2005-12-16 2007-06-21 Forrest Stephen R Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix
US7618905B1 (en) 2007-04-23 2009-11-17 The United States Of America As Represented By The Secretary Of The Air Force Heterostructure self-assembled quantum dot
GB2451884A (en) 2007-08-16 2009-02-18 Sharp Kk A Semiconductor Device and a Method of Manufacture Thereof
US7915521B2 (en) * 2007-10-10 2011-03-29 The Trustees Of Princeton University Type II quantum dot solar cells
US8029924B2 (en) * 2008-08-21 2011-10-04 Seagate Technology Llc Thin film template for fabrication of two-dimensional quantum dot structures
US8927852B2 (en) * 2008-08-21 2015-01-06 Seagate Technology Llc Photovoltaic device with an up-converting quantum dot layer and absorber
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
GB201104261D0 (en) 2011-03-14 2011-04-27 Univ Leeds Oxide removal from semiconductor surfaces

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021588A (en) 1983-07-16 1985-02-02 Univ Kyoto Magnetoelectric photo effect photo amplifier
US4952792A (en) 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells
US5614435A (en) 1994-10-27 1997-03-25 The Regents Of The University Of California Quantum dot fabrication process using strained epitaxial growth
JPH09260598A (en) 1996-03-19 1997-10-03 Fujitsu Ltd Optical semiconductor memory device
US6074892A (en) 1996-05-07 2000-06-13 Ciena Corporation Semiconductor hetero-interface photodetector
CA2268997C (en) 1998-05-05 2005-03-22 National Research Council Of Canada Quantum dot infrared photodetectors (qdip) and methods of making the same

Also Published As

Publication number Publication date
US6583436B2 (en) 2003-06-24
US20020074543A1 (en) 2002-06-20
WO2002009188A1 (en) 2002-01-31

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