IE801530L - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number: IE801530L
Authority: IE; Ireland
Prior art keywords: integrated circuit; integrated; circuit
Prior art date: 1979-07-24

Application number

IE801530A

Other versions

IE50350B1 (en

Original Assignee

Itt

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-07-24

Filing date

1980-07-23

Publication date

1981-01-24

1980-07-23 Application filed by Itt filed Critical Itt

1981-01-24 Publication of IE801530L publication Critical patent/IE801530L/en

1986-04-02 Publication of IE50350B1 publication Critical patent/IE50350B1/en

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

IE1530/80A 1979-07-24 1980-07-23 Monolithic integrated cmos circuit IE50350B1 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE2929869A DE2929869C2 (en)	1979-07-24	1979-07-24	Monolithic integrated CMOS inverter circuitry

Publications (2)

Publication Number	Publication Date
IE801530L true IE801530L (en)	1981-01-24
IE50350B1 IE50350B1 (en)	1986-04-02

Family

ID=6076567

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IE1530/80A IE50350B1 (en)	1979-07-24	1980-07-23	Monolithic integrated cmos circuit

Country Status (6)

Country	Link
JP (1)	JPS5618459A (en)
DE (1)	DE2929869C2 (en)
FR (1)	FR2462025A1 (en)
GB (1)	GB2054955B (en)
IE (1)	IE50350B1 (en)
IT (1)	IT1193544B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57177554A (en) *	1981-04-27	1982-11-01	Hitachi Ltd	Semiconductor integrated circuit device
EP0166386A3 (en) *	1984-06-29	1987-08-05	Siemens Aktiengesellschaft	Integrated circuit of the complementary circuit technique
EP0213425B1 (en) *	1985-08-26	1992-05-06	Siemens Aktiengesellschaft	Complementary integrated circuit with a substrate bias voltage generator and a schottky diode
US11955476B2 (en)	2008-12-23	2024-04-09	Schottky Lsi, Inc.	Super CMOS devices on a microelectronics system
WO2016057973A1 (en) *	2014-10-10	2016-04-14	Schottky Lsi, Inc.	Super cmos (scmostm) devices on a microelectronic system
US11342916B2 (en)	2008-12-23	2022-05-24	Schottky Lsi, Inc.	Schottky-CMOS asynchronous logic cells
US9853643B2 (en)	2008-12-23	2017-12-26	Schottky Lsi, Inc.	Schottky-CMOS asynchronous logic cells
US8476689B2 (en)	2008-12-23	2013-07-02	Augustine Wei-Chun Chang	Super CMOS devices on a microelectronics system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3673428A (en) *	1970-09-18	1972-06-27	Rca Corp	Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS568501B2 (en) *	1973-05-12	1981-02-24
JPS5211880A (en) *	1975-07-18	1977-01-29	Toshiba Corp	Semiconductor integrated circuit device
JPS5211885A (en) *	1975-07-18	1977-01-29	Toshiba Corp	Semiconductor integrated circuit device
JPS6043666B2 (en) *	1976-10-18	1985-09-30	株式会社日立製作所	Complementary MIS semiconductor device
JPS53105985A (en) *	1977-02-28	1978-09-14	Nec Corp	Conmplementary-type insulating gate field effect transistor

1979
- 1979-07-24 DE DE2929869A patent/DE2929869C2/en not_active Expired
1980
- 1980-06-19 GB GB8020110A patent/GB2054955B/en not_active Expired
- 1980-07-18 JP JP9860980A patent/JPS5618459A/en active Pending
- 1980-07-23 IT IT23632/80A patent/IT1193544B/en active
- 1980-07-23 FR FR8016206A patent/FR2462025A1/en active Granted
- 1980-07-23 IE IE1530/80A patent/IE50350B1/en unknown

Also Published As

Publication number	Publication date
JPS5618459A (en)	1981-02-21
IT1193544B (en)	1988-07-08
GB2054955B (en)	1983-05-11
DE2929869A1 (en)	1981-02-19
FR2462025A1 (en)	1981-02-06
FR2462025B1 (en)	1983-11-18
IT8023632A0 (en)	1980-07-23
DE2929869C2 (en)	1986-04-30
IE50350B1 (en)	1986-04-02
GB2054955A (en)	1981-02-18
IT8023632A1 (en)	1982-01-23

Publication	Publication Date	Title
GB2120847B (en)	1984-05-31	Integrated circuit
JPS5633648A (en)	1981-04-04	Renetting circuit
DE3070410D1 (en)	1985-05-09	Integrated memory circuit
GB8311223D0 (en)	1983-06-02	Integrated logic circuit
DE3071162D1 (en)	1985-11-14	Integrated circuit board
JPS5550654A (en)	1980-04-12	Integrated circuit configuration
JPS55154794A (en)	1980-12-02	Integrated circuit
JPS55127053A (en)	1980-10-01	Onnchip trimming integrated circuit
JPS55127726A (en)	1980-10-02	Comparing circuit
GB2054263B (en)	1983-07-20	Integrated circuit device
JPS5634187A (en)	1981-04-06	Mosstransistor circuit
GB8320970D0 (en)	1983-09-07	Circuit arrangement
JPS5619652A (en)	1981-02-24	Integrated circuit
ZA802424B (en)	1982-02-24	Setting circuit
JPS54104294A (en)	1979-08-16	Integrated circuit
JPS55150659A (en)	1980-11-22	Line circuit
IE801530L (en)	1981-01-24	Integrated circuit
JPS558098A (en)	1980-01-21	Integrated circuit
JPS5694339A (en)	1981-07-30	Electronic flashhsystem controllcircuit
JPS55117266A (en)	1980-09-09	Integrated circuit structure
GB2046024B (en)	1983-01-26	Circuit assembly
JPS565639A (en)	1981-01-21	Electronic hemadinamometer
DE3064317D1 (en)	1983-08-25	Integrated delay circuit
JPS5674611A (en)	1981-06-20	Quotienttevaluation circuit
JPS5632770A (en)	1981-04-02	Integrated circuit device