HK1241148A1 - Enhanced amplifier efficiency through cascode current steering - Google Patents

Description

Enhanced amplifier efficiency by cascode current steering

Cross Reference to Related Applications

This application claims priority to U.S. provisional application No. 62/116,464 entitled "ENHANCED AMPLIFIEREFFICICIENCY THROUGH cable CURRENT termination", filed on 15/2/2015, the disclosure of which is expressly incorporated herein in its entirety by reference.

Technical Field

The present application relates to power amplifiers in Radio Frequency (RF) applications.

Background

Power Amplifiers (PAs) are widely used in networks to set the transmit power level of information-carrying signals. For example, PAs are used to set the pulse emission energy of lasers in optical networks. PAs are also included in various wireless network devices, such as base stations and mobile devices, to set the transmit power level of Radio Frequency (RF) signals. PAs are also used in local area networks to allow wired and wireless connections for various devices.

Managing PA operation in a mobile device using a battery is important because power consumption of the PA often has a substantial impact on battery life. However, meeting power consumption goals can be detrimental to other goals such as affecting signal integrity in data packets and linearity of error control.

Some devices, such as wireless devices, utilize Doherty amplifiers to improve PA efficiency. In most cases, doherty amplifiers offer the advantage of efficiency over conventional single-ended amplifiers.

Some advanced modulation schemes using peak-to-average ratio (peak-to-average ratio) require amplifiers to have their maximum saturated output power (P) from them_sat) Several dB of operation to maintain linearity. Since the doherty amplifier has a distance P_satAn efficiency peak of about 6dB, so its linear efficiency can be improved. In addition, doherty amplifiers add complexity to the PA due to the RF input splitter/phase shifter and output combiner.

Disclosure of Invention

According to various implementations, the present application relates to a Power Amplifier (PA) comprising: a common emitter configured to receive a Radio Frequency (RF) signal. The PA further includes: a carrier amplifier coupled to the common emitter to form a carrier cascode (cascode) configuration, a collector of the carrier amplifier being supplied with a first supply voltage. The PA further includes: a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier being provided with a second supply voltage greater than the first supply voltage.

In some implementations, a bias voltage is provided to each of the carrier and peaking amplifiers to allow the respective amplifier to be turned on and off.

In some implementations, the carrier amplifier is turned on by setting a bias voltage of the carrier amplifier to a high level and the peaking amplifier is turned off by setting the peaking amplifier bias voltage to a ground level when an output power (Pout) of the PA is less than a selected value. In some implementations, substantially all of the collector current of the PA is derived from the first supply voltage to produce maximum or increased efficiency at the output power.

In some implementations, the carrier amplifier is turned off by setting the bias voltage of the carrier amplifier to the ground level and the peaking amplifier is turned on by setting the bias voltage of the carrier amplifier to the high level when Pout is greater than the selected value. In some implementations, substantially all of the collector current of the PA is derived from the second supply voltage to produce an increase in maximum output power.

In some implementations, the selected value is the saturation power level (Psat) minus 3 dB.

In some implementations, the carrier and peak cascode configurations substantially preserve a gain of the PA in either configuration.

In some implementations, the PA has a minimized or reduced discontinuity in amplitude-to-amplitude (AM-AM) response during a transition between the first and second supply voltages.

In some implementations, the present application relates to a Radio Frequency (RF) module, comprising: a package substrate configured to accommodate a plurality of components. The RF module further includes: a Power Amplifier (PA) implemented on the package substrate, the PA including a common emitter configured to receive an RF signal, the PA further including a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier being provided with a first supply voltage, the PA further including a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier being provided with a second supply voltage greater than the first supply voltage.

In some implementations, the RF module is a Front End Module (FEM). According to some implementations, the PA of the RF module includes the functionality and/or features of any of the PAs and/or amplification systems described herein.

According to some teachings, the present application relates to a Radio Frequency (RF) device comprising: a transceiver that generates an RF signal. The RF device also includes a front-end module (FEM) in communication with the transceiver, the FEM including a package substrate configured to house a plurality of components, the FEM further including a Power Amplifier (PA) implemented on the package substrate, the PA including a common emitter configured to receive an RF signal, the PA further including a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier being provided with a first supply voltage, the PA further including a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier being provided with a second supply voltage greater than the first supply voltage. The RF device also includes an antenna in communication with the FEM, the antenna configured to transmit the amplified RF signal.

In some implementations, the RF device includes a wireless device. In some implementations, the wireless device includes at least one of a base station, a repeater, a mobile phone, a smart phone, a computer, a laptop computer, a tablet computer, and a peripheral device. According to some implementations, the PA of the FEM module includes the functionality and/or features of any of the PAs and/or amplification systems described herein.

For purposes of summarizing the present application, certain aspects, advantages, and novel features of the invention have been described herein. It is to be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment of the invention. Thus, the invention may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other advantages as may be taught or suggested herein.

Drawings

In order that the present application may be understood in more detail, a more particular description of features may be had by reference to various implementations, some of which are illustrated in the appended drawings. The drawings, however, merely illustrate more pertinent features of the present application and therefore should not be considered limiting, as the description may permit the incorporation of other effective features.

Fig. 1 is a block diagram of a wireless system or architecture according to some implementations.

Fig. 2 is a block diagram of an amplification system according to some implementations.

Fig. 3A-3E illustrate schematic diagrams of a power amplifier according to some implementations.

Fig. 4 is a block diagram of an amplification system according to some implementations.

Fig. 5 is a schematic diagram of a current steering (current steering) cascode amplifier according to some implementations.

Fig. 6 illustrates an example graph of cascode bias control according to some implementations.

Fig. 7 illustrates an example current path of the current steering cascode amplifier in fig. 5, according to some implementations.

Fig. 8 illustrates additional example current paths of the current steering cascode amplifier in fig. 5, according to some implementations.

Fig. 9 illustrates example responses of a carrier amplifier and a peaking amplifier according to some implementations, according to some implementations.

Fig. 10 illustrates an example performance graph of a current-steering cascode amplifier according to some implementations.

Fig. 11 is a schematic diagram of an example Radio Frequency (RF) module, according to some implementations.

Fig. 12 is a schematic diagram of an example RF device according to some implementations.

In accordance with common practice, the various features illustrated in the drawings may not be drawn to scale. Accordingly, the dimensions of the various features may be arbitrarily expanded or reduced for clarity. Additionally, some of the figures may not illustrate all of the components of a given system, method, or apparatus. Finally, like reference numerals may be used to identify like features throughout the specification and figures.

Detailed Description

The headings, if any, are provided herein for convenience only and do not necessarily affect the scope or meaning of the claimed invention.

Referring to fig. 1, one or more features of the present application relate generally to a wireless system or architecture 50 having an amplification system 52. In some embodiments, amplification system 52 may be implemented as one or more devices, and such devices may be utilized in wireless system/architecture 50. In some embodiments, the wireless system/architecture 50 may be implemented in, for example, a portable wireless device. Examples of such wireless devices are described herein.

Fig. 2 shows that the amplification system 52 of fig. 1 typically includes a Radio Frequency (RF) amplifier assembly 54 having one or more Power Amplifiers (PAs). In the example of fig. 2, three PAs (60 a-60 c) are illustrated as forming the RF amplifier assembly 54. It should be understood that other numbers of PAs may be implemented. It should also be understood that one or more features of the present application may also be implemented in RF amplifier assemblies having other types of RF amplifiers.

In some embodiments, the RF amplifier components 54 may be implemented on one or more semiconductor die (die), and such die may be included in a packaging module such as a Power Amplifier Module (PAM) or a Front End Module (FEM). Such a package module is typically mounted on a circuit board associated with, for example, a portable wireless device.

The PAs (e.g., 60 a-60 c) in the amplification system 52 are typically biased by a biasing system 56. In addition, the supply voltage for the PA is typically provided by a power supply system 58. In some embodiments, either or both of the bias voltage system 56 and the power supply system 58 may be included in the aforementioned packaged module with the RF amplifier assembly 54.

In some embodiments, the amplification system 52 may include a matching network 62. Such matching networks may be configured to provide input matching and/or output matching functionality for the RF amplifier components 54.

For purposes of description, it should be understood that each of the PAs 60 a-60 c of fig. 2 may be implemented in a variety of ways. Fig. 3A-3E illustrate non-limiting examples of how each of the PAs 60 a-60 c in fig. 2 can be configured. Fig. 3A shows an example PA with an amplifying transistor 64, wherein an input RF signal (RF in) is provided to the base of the transistor 64, and the amplified RF signal (RF out) is output through the collector of the transistor 64.

Fig. 3B shows an example PA having a plurality of amplifying transistors (e.g., 64a, 64B) arranged in multiple stages. The input RF signal (RF _ in) is provided to the base of the first transistor 64a, and the amplified RF signal from the first transistor 64a is output through the collector thereof. The amplified RF signal from the first transistor 64a is provided to the base of the second transistor 64b, and the amplified RF signal from the second transistor 64b is output through the collector thereof, thereby generating an output RF signal (RF _ out) of the PA.

In some embodiments, the foregoing example PA configuration of fig. 3B may be illustrated as two or more stages as shown in fig. 3C. The first stage 64a may be configured as, for example, a driver stage, and the second stage 64b may be configured as, for example, an output stage.

Fig. 3D illustrates that, in some embodiments, the PA may be configured as a doherty PA. Such a doherty PA may include amplifying transistors 64a, 64b, the amplifying transistors 64a, 64b being configured to provide carrier amplification and peak amplification of the input RF signal (RF _ in) to generate an amplified output RF signal (RF _ out). The input RF signal may be split by a splitter into a carrier portion and a peak portion. The amplified carrier and peak signals may be combined by a combiner to produce an output RF signal.

Fig. 3E illustrates that, in some embodiments, the PA may be implemented in a cascode configuration. The input RF signal (RF _ in) may be provided to the base of the first amplifying transistor 64a operating as a common emitter device. The output of the first amplifying transistor 64a may be provided through its collector and to the emitter of the second amplifying transistor 64b, which operates as a common base device. The output of the second amplifying transistor 64b may be provided through its collector to generate an amplified output RF signal (RF _ out) of the PA.

In each of the examples of fig. 3A-3E, the amplifying transistor is described as a Bipolar Junction Transistor (BJT), such as a Heterojunction Bipolar Transistor (HBT). It should be understood that one or more features of the present application may also be implemented in or with other types of transistors, such as Field Effect Transistors (FETs).

Fig. 4 illustrates that, in some embodiments, the amplification system 52 of fig. 2 may be implemented as a High Voltage (HV) power amplification system 100. Such a system may include a HV power amplifier assembly 54, the HV power amplifier assembly 54 configured to include HV amplification operations of some or all of the PAs (e.g., 60 a-60 c). Such a PA may be biased by a biasing system 56, as described herein. In some embodiments, the aforementioned HV amplification operation may be facilitated by the HV power supply system 58. In some embodiments, an interface system 72 may be implemented to provide interface functionality between the HV power amplifier assembly 54 and either or both of the bias system 56 and the HV power system 58.

Examples related to enhancing Power Amplifier (PA) efficiency by cascode current steering are described herein. It is noted that doherty amplifiers can provide efficiency advantages over conventional single-ended amplifiers. In some embodiments, advanced modulation schemes using peak-to-average ratios require or expect a doherty amplifier to output power (P) at maximum saturation from distance_sat) Operate in several dB in dimensionAnd maintaining linearity. Since doherty amplifiers typically have an efficiency peak at a distance P of about 6dB, there is room for improvement in their linear efficiency.

Examples of how an efficiency response similar to a doherty amplifier can be obtained without the complexity of Radio Frequency (RF) input splitter/phase shifter and output combiner are disclosed herein.

Fig. 5 illustrates an exemplary schematic diagram of a current steering cascode amplifier 500 according to some implementations. As shown in FIG. 5, the current steering cascode amplifier 500 has a common emitter 510, the common emitter 510 configured to receive an input RF signal (RF) at its base_in502) And through its collector (RF)_out504) An output is generated. Such output is shown as being provided to the emitter of the peak amplifier 520 and also to the emitter of the carrier amplifier 530. The carrier amplifier 530 is shown generating its output through its collector, and the peaking amplifier 520 is shown generating its output through its collector. Accordingly, the common emitter 510 and the carrier amplifier 530 may form a carrier cascode configuration. Similarly, common emitter 510 and peak amplifier 520 may form a peak cascode configuration.

In the example of fig. 5, the collector nodes of the carrier amplifier 530 and the peaking amplifier 520 are shown coupled through a DC blocking capacitive element 542. The collector of the carrier amplifier 530 is shown coupled to the output node (RF) through a DC blocking capacitive element 544_out504)。

Supply voltage V_ccIs 552 shown provided to the collector of the peak amplifier 520 through a choke inductance element 554. Supply voltage556 is shown as being provided to the collector of the carrier amplifier 530 through a choke inductance element 558.

Peak amplifier 520 is shown at its base with a peak cascode bias voltage V from a peak bias system_cascode562 apply a bias voltage. Carrier amplifierAmplifier 530 is shown at its base in cascode bias V with the carrier from the carrier bias system_cascode564 is biased.

Fig. 6 illustrates an example graph 600 of cascode bias control according to some implementations. As shown in FIG. 6, the carrier cascoded bias voltage V_cascode564 (solid line) and a peak cascode bias V_cascode562 (dotted line) as output power P_outVaries as a function of (c). For example, carrier cascoded bias V_cascode564 are shown at Pout<Psat-3dB has a value of about 2V, and at Pout>Psat-3dB has a value of about 0V. Peak cascode bias voltage V_cascode562 are shown at Pout<Psat-3dB has a value of about 0V and at Pout>Psat-3dB has a value of about 2V.

With the aforementioned arrangement of applying bias voltage, at Pout<Psat-3dB, an exemplary current path (e.g., I) as shown in fig. 7 can be obtained_ccPath 700). At peak cascode bias voltage V_cascode562 is 0V (and thus the peak amplifier 520 is off) and the carrier cascode bias V_cascode564 is 2V (and thus carrier amplifier 530 is on)_ccShown as flowing through a cascode arrangement of a carrier amplifier 530 and a common emitter 510 (e.g., I_ccPath 700). Maximum P in such a state_outIs composed of

Wherein R is_LLIs a load resistor.

Similarly, with the aforementioned biased configuration, at Pout>Psat-3dB, an exemplary current path (e.g., I) as shown in fig. 8 can be obtained_ccPath 800). At peak cascode bias voltage V_cascode562 is 2V (and thus the peak amplifier 520 is on) and the carrier cascode bias V_cascode564 is 0V (and therefore carrier amplifier 530 is off), collector current I_ccShown as flowing through peak amplificationCascode arrangement of a common emitter 510 and a collector 520 (e.g., I)_ccPath 800). Maximum P in such a state_outIs composed of

V_cc ²/(2R_LL)＝V_cc ²/(2R_LL) Wherein R is_LLIs a load resistance.

Referring to the examples of fig. 6 to 8, two power supply voltages are supplied to the carrier amplifier 530 and the peak amplifier 520, respectivelyAnd V_cc. In some implementations, the supply voltage V for the peak amplifier 520_cc552 may be provided from, for example, a boost DC/DC converter. In some implementations, the supply voltage for the carrier amplifier 530556 may be provided from a buck converter, for example.

Referring also to fig. 6-8, at Pout<In the first region of Psat-3dB, the cascode voltage of the peaking amplifier 520 is pulled to ground, while the cascode voltage of the carrier amplifier 530 is pulled high (e.g., 2V). Such a configuration forces the slave supply voltage556 draws substantially all of the collector current away. The maximum output power of the PA in this configuration is V_cc ²/(4R_LL) Maximum efficiency is achieved at this output power.

At Pout>In the region of Psat-3dB, the cascode voltage of the peaking amplifier 520 is pulled high (e.g., 2V), while the cascode voltage of the carrier amplifier 530 is pulled to ground. Such a configuration forces the slave supply voltage V_cc552 draws substantially all of the collector current. The maximum output power of the PA in this configuration is V_cc ²/(2R_LL) Or 3dB higher than the carrier amplifier configuration.

It is further noted that the aforementioned power supply rejection (suppression) of an amplifier in a cascode configuration preserves the gain of the amplifier in either configuration. This effect can be achieved at the supply voltage V_cc552 and supply voltageThe transition period between 556 minimizes or reduces any discontinuity in the amplitude-to-amplitude (AM-AM) response.

Fig. 9 illustrates example responses of a carrier amplifier and a peaking amplifier according to some implementations. Graph 910 illustrates an example of Power Added Efficiency (PAE) response for a peak amplifier and a carrier amplifier, according to some implementations. Graph 920 shows additional examples of PAE responses for a peak amplifier and a carrier amplifier, according to some implementations. Graph 930 shows an example of amplitude-to-amplitude (AM-AM) responses of a peak amplifier and a carrier amplifier, according to some implementations. Graph 940 illustrates an example of amplitude-to-phase (AM-PM) responses of a peak amplifier and a carrier amplifier, according to some implementations.

Fig. 10 illustrates an example performance graph of the current-steering cascode amplifier as a whole, according to some implementations. According to some implementations, the graph 1010 shows Power Added Efficiency (PAE) versus output power (P)_out) Examples of (2). According to some implementations, the graph 1020 shows PAE versus output power (P)_out) Further examples of (3). Graph 1030 illustrates gain versus output power (P), according to some implementations_out) Examples of (2). Graph 1040 shows phase versus output power (P), according to some implementations_out) Examples of (2).

Fig. 11 illustrates that, in some embodiments, some or all of the current steering cascode amplifiers described herein may be implemented in a Radio Frequency (RF) module. Such a module may be, for example, a Front End Module (FEM). In the example of fig. 11, module 1100 may include a package substrate 1102, and a number of components may be mounted on such a package substrate. For example, a front-end power management integrated circuit (FE-PMIC) component 1152, a power amplifier component 1154 including the current-steering cascode 500, a matching component 1156, and a duplexer component 1158 may be mounted and/or implemented on the package substrate 1102 and/or within the package substrate 1102. Other components, such as a plurality of optional Surface Mount Technology (SMT) devices 1104 and an Antenna Switch Module (ASM)1106, may also be mounted on package substrate 1102. While all of the various components are illustrated as being disposed on the package substrate 1102, it should be understood that some components may be implemented above other components.

In some implementations, a device and/or circuit having one or more features described herein may be included in an RF device, such as a wireless device. Such devices and/or circuits may be implemented in a wireless device directly, in the form of a module as described herein, or in some combination thereof. In some embodiments, such wireless devices may include, for example, cellular telephones, smart phones, handheld wireless devices with or without telephone functionality, wireless tablets, and the like.

Fig. 12 illustrates an example Radio Frequency (RF) device 1200 having one or more of the advantageous features described herein. According to some implementations, the RF device 1200 is a wireless device. In the context of a module having one or more features described herein, such a module may be generally illustrated by dashed box 1100 and may be implemented as, for example, a Front End Module (FEM). As described herein, such a module may include one or more PAs with current steering features. According to some implementations, the current steering features operate similarly to the current-steering cascode amplifier 500 as described herein.

Referring to fig. 12, Power Amplifiers (PAs) 1220 may receive their respective RF signals from transceivers 1210, and transceivers 1210 may be configured and operated in a known manner to generate RF signals to be amplified and transmitted and to process the received signals. Transceiver 1210 is shown interacting with baseband subsystem 1208, and baseband subsystem 1208 is configured to provide conversion between data and/or voice signals appropriate for the user and RF signals appropriate for transceiver 1210. Transceiver 1210 may also communicate with a power management component 1206, power management component 1206 configured to manage power for operation of wireless device 1200. Such power management may also control the operation of baseband subsystem 1208 and module 1100.

The baseband subsystem 1208 is shown connected to the user interface 1202 to facilitate various inputs and outputs of voice and/or data to and from a user. The baseband subsystem 1208 may also be coupled to memory 1204, the memory 1204 configured to store data and/or instructions to facilitate operation of the wireless device and/or to provide storage of information to a user.

In the example shown in fig. 12, the outputs of PAs 1220 are shown matched (via respective matching circuits 1222) and routed to their respective duplexers 1224. Such amplified and filtered signals may be routed through antenna switch 1214 to antenna 1216 for transmission. In some embodiments, the duplexer 1224 may allow transmit and receive operations to be performed simultaneously using a common antenna (e.g., 1216). In fig. 12, the received signal is shown as being routed to an "Rx" path (not shown) that may include, for example, one or more Low Noise Amplifiers (LNAs).

A number of other wireless device configurations may utilize one or more features described herein. For example, the wireless device need not be a multi-band device. In further examples, the wireless device may include additional antennas such as diversity antennas and additional connection features such as Wi-Fi, bluetooth, and GPS.

Unless the context clearly requires otherwise, throughout the description and the claims, the words "comprise", "comprising", and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense, that is, in a sense of "including but not limited to". As generally used herein, the term "coupled" refers to two or more elements that may be connected directly or by way of one or more intermediate elements. In addition, the words "herein," "above," "below," and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above description using the singular or plural number may also include the plural or singular number respectively. With respect to the word "or" when referring to a list of two or more items, the word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.

The above detailed description of embodiments of the invention is not intended to be exhaustive or to limit the invention to the precise form disclosed above. While specific embodiments of, and examples for, the invention are described above for illustrative purposes, various equivalent modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize. For example, while processes or blocks are presented in a given order, alternative embodiments may perform processes having the steps or employ systems having the blocks in a different order, and some processes or blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these processes or blocks may be implemented in a variety of different ways. In addition, while processes or blocks are sometimes shown as being performed in series, these processes or blocks may instead be performed in parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to other systems, not necessarily the systems described above. The elements and acts of the various embodiments described above can be combined to provide further embodiments.

While certain embodiments of the present invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the application. Indeed, the novel methods and systems described herein may be embodied in a variety of other forms; in addition, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the application. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the application.

Claims (20)

1. A Power Amplifier (PA), comprising:

a common emitter configured to receive a Radio Frequency (RF) signal;

a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier being provided with a first supply voltage; and

a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier being provided with a second supply voltage greater than the first supply voltage.

2. The PA of claim 1 wherein a bias voltage is provided to each of the carrier and peaking amplifiers to allow the respective amplifier to turn on and off.

3. The PA of claim 2 wherein the carrier amplifier is turned on by setting a bias voltage of the carrier amplifier to a high level and the peaking amplifier is turned off by setting the peaking amplifier bias voltage to a ground level when an output power (Pout) of the PA is less than a selected value.

4. A PA according to claim 3 in which substantially all of the collector current of the PA is derived from the first supply voltage so as to produce maximum or increased efficiency at the output power.

5. The PA of claim 3 wherein the carrier amplifier is turned off by setting a bias voltage of the carrier amplifier to the ground level and the peaking amplifier is turned on by setting the bias voltage of the carrier amplifier to the high level when Pout is greater than a selected value.

6. The PA of claim 5, wherein substantially all of a collector current of the PA is derived from the second supply voltage to produce the increase in maximum output power.

7. The PA of claim 5, wherein the selected value is a saturation power level (Psat) minus 3 dB.

8. The PA of claim 2, wherein the carrier and peaking cascode configurations substantially preserve a gain of the PA in either configuration.

9. The PA of claim 2, wherein the PA has a minimized or reduced discontinuity in amplitude-to-amplitude (AM-AM) response during a transition between the first and second supply voltages.

10. A Radio Frequency (RF) module, comprising:

a package substrate configured to accommodate a plurality of components; and

a Power Amplifier (PA) implemented on the package substrate, the PA including a common emitter configured to receive an RF signal, the PA further including a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier being provided with a first supply voltage, the PA further including a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier being provided with a second supply voltage greater than the first supply voltage.

11. The RF module of claim 10 wherein the RF module is a Front End Module (FEM).

12. The RF module of claim 10 wherein each of the carrier amplifier and peaking amplifier is provided with a bias voltage to allow the respective amplifier to be turned on and off.

13. The RF module of claim 12 wherein the carrier amplifier is turned on by setting a bias voltage of the carrier amplifier to a high level and the peaking amplifier is turned off by setting the peaking amplifier bias voltage to a ground level when an output power (Pout) of the PA is less than a selected value.

14. The RF module of claim 13 wherein substantially all of the collector current of the PA is derived from the first supply voltage to produce maximum or increased efficiency at the output power.

15. The RF module of claim 13 wherein the carrier amplifier is turned off by setting a bias voltage of the carrier amplifier to the ground level and the peaking amplifier is turned on by setting the bias voltage of the carrier amplifier to the high level when Pout is greater than the selected value.

16. The RF module of claim 15 wherein substantially all of the collector current of the PA is derived from the second supply voltage to produce an increase in maximum output power.

17. The RF module of claim 12 wherein the carrier and peak cascode configurations substantially preserve a gain of the PA in either configuration.

18. A Radio Frequency (RF) device, comprising:

a transceiver configured to generate an RF signal;

a front-end module (FEM) in communication with the transceiver, the FEM including a package substrate configured to house a plurality of components, the FEM further including a Power Amplifier (PA) implemented on the package substrate, the PA including a common emitter configured to receive an RF signal, the PA further including a carrier amplifier coupled to the common emitter to form a carrier cascode configuration, a collector of the carrier amplifier being provided with a first supply voltage, the PA further including a peaking amplifier coupled to the common emitter to form a peaking cascode configuration, a collector of the peaking amplifier being provided with a second supply voltage greater than the first supply voltage; and

an antenna in communication with the FEM, the antenna configured to transmit an amplified RF signal.

19. The RF device of claim 18 wherein the RF device comprises a wireless device.

20. The RF device of claim 19 wherein the wireless device comprises at least one of a base station, a repeater, a mobile phone, a smartphone, a computer, a laptop, a tablet, and a peripheral device.