|
US6100770A
(en)
|
|
MIS transistor varactor device and oscillator using same
|
|
US7378327B2
(en)
|
|
Method for fabricating a junction varactor with high Q factor
|
|
US6521506B1
(en)
|
|
Varactors for CMOS and BiCMOS technologies
|
|
EP0902483B1
(en)
|
|
Electrical device comprising a voltage dependant capacitance and method of manufacturing the same
|
|
KR20070053219A
(ko)
|
|
분리 웰을 이용한 ｍｏｓ 버랙터
|
|
US6686640B2
(en)
|
|
Varactor having improved Q-factor and method of fabricating the same using SiGe heterojunction bipolar transistor
|
|
US7019384B2
(en)
|
|
Integrated, tunable capacitance device
|
|
US20050067674A1
(en)
|
|
Integrated tuneable capacitance
|
|
US6864528B2
(en)
|
|
Integrated, tunable capacitor
|
|
HK1018921B
(zh)
|
|
含有依从电压的电容的电器件及其制法
|
|
US20050212048A1
(en)
|
|
Integrated switch device
|
|
US6906904B2
(en)
|
|
Integrated, tunable capacitance
|
|
JP2000299386A
(ja)
|
|
半導体回路装置及びその製造方法
|
|
US5708398A
(en)
|
|
Dual voltage controlled oscillator using integrated transistor and negative differential resistance diode
|
|
US20190363198A1
(en)
|
|
Gallium-nitride-based transcaps for millimeter wave applications
|