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HK1095921B - 使用软刻蚀或压印刻蚀制造绝缘的微观结构和纳米结构的方法 - Google Patents

使用软刻蚀或压印刻蚀制造绝缘的微观结构和纳米结构的方法 Download PDF

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Publication number
HK1095921B
HK1095921B HK07103263.7A HK07103263A HK1095921B HK 1095921 B HK1095921 B HK 1095921B HK 07103263 A HK07103263 A HK 07103263A HK 1095921 B HK1095921 B HK 1095921B
Authority
HK
Hong Kong
Prior art keywords
pfpe
mold
patterned
particles
substrate
Prior art date
Application number
HK07103263.7A
Other languages
German (de)
English (en)
French (fr)
Other versions
HK1095921A (zh
Inventor
德西蒙‧M‧约瑟夫
罗兰‧P‧詹森
埃克斯纳‧E‧安斯勒
萨穆尔斯基‧T‧爱德华
萨穆尔斯基‧R‧于德
梅诺‧W‧本杰明
欧利斯‧E‧拉肯
丹尼森‧M‧然热
Original Assignee
The University Of North Carolina At Chapel Hill
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The University Of North Carolina At Chapel Hill filed Critical The University Of North Carolina At Chapel Hill
Publication of HK1095921A publication Critical patent/HK1095921A/zh
Publication of HK1095921B publication Critical patent/HK1095921B/zh

Links

HK07103263.7A 2003-12-19 2004-12-20 使用软刻蚀或压印刻蚀制造绝缘的微观结构和纳米结构的方法 HK1095921B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US60/531,531 2003-12-19
US60/583,170 2004-06-25
US60/604,970 2004-08-27

Publications (2)

Publication Number Publication Date
HK1095921A HK1095921A (zh) 2007-05-18
HK1095921B true HK1095921B (zh) 2018-04-06

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