GB650824A - Process for manufacture of artificial crystals - Google Patents
Process for manufacture of artificial crystalsInfo
- Publication number
- GB650824A GB650824A GB28475/47A GB2847547A GB650824A GB 650824 A GB650824 A GB 650824A GB 28475/47 A GB28475/47 A GB 28475/47A GB 2847547 A GB2847547 A GB 2847547A GB 650824 A GB650824 A GB 650824A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solution
- nuclei
- crystals
- seed crystals
- funnels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title abstract 9
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000243 solution Substances 0.000 abstract 12
- 239000002245 particle Substances 0.000 abstract 2
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 abstract 1
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
- 235000019837 monoammonium phosphate Nutrition 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 239000012047 saturated solution Substances 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/54—Organic compounds
- C30B29/58—Macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Crystals are grown by immersing seed crystals in a super-saturated solution, but prior to the immersion of the seed crystals the surface of the solution is covered with a film of oil and the solution is subjected to mech <PICT:0650824/III/1> <PICT:0650824/III/2> anical vibrations of supersonic frequency so as to cause the formation of crystal nuclei around any suspended particles present in the solution, the nuclei are then separated from the solution. The crystals grown by immersing seed crystals in the purified solution are free from flaws. Ammonium dihydrogen phosphate (69.5 kg.) is dissolved in 100 litres of water at 50 DEG C. in container 1; the solution is covered with a film 7 of oil, and stirred by propeller 2. The temperature of the solution is then reduced to 45 DEG C. and submitted to a beam of supersonic waves produced by generator 3. When the density of the solution has become that of a solution saturated at 45 DEG C., the generator and the propeller are stopped. The microscopic crystals which have been formed round the suspended particles fall to the bottom of the container, and are removed through stopcock 6. The solution is heated several degrees to dissolve any remaining nuclei, and is then allowed to cool to 40 DEG C. One or more seed crystals suspended by supports 9, are then immersed in the solution; and the stirring is resumed. Four vertical, curved plates 10 are disposed in the container. These plates cause accidentally-formed nuclei to fall into funnels 11. The nuclei collecting in funnels 11 may either be withdrawn via stopcocks 13, or they may be redissolved by local elevation of the temperature of the solution in the funnels by means of heating elements 14.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR650824X | 1946-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB650824A true GB650824A (en) | 1951-03-07 |
Family
ID=9004200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB28475/47A Expired GB650824A (en) | 1946-10-25 | 1947-10-24 | Process for manufacture of artificial crystals |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB650824A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2304382A1 (en) * | 1975-03-17 | 1976-10-15 | Philips Corp | METHOD FOR ISOTHERMAL GROWTH OF CRYSTALS |
-
1947
- 1947-10-24 GB GB28475/47A patent/GB650824A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2304382A1 (en) * | 1975-03-17 | 1976-10-15 | Philips Corp | METHOD FOR ISOTHERMAL GROWTH OF CRYSTALS |
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