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GB2613923B - A method of producing an electronic device precursor - Google Patents

A method of producing an electronic device precursor Download PDF

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Publication number
GB2613923B
GB2613923B GB2213912.5A GB202213912A GB2613923B GB 2613923 B GB2613923 B GB 2613923B GB 202213912 A GB202213912 A GB 202213912A GB 2613923 B GB2613923 B GB 2613923B
Authority
GB
United Kingdom
Prior art keywords
producing
electronic device
device precursor
precursor
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2213912.5A
Other versions
GB202213912D0 (en
GB2613923A (en
Inventor
Baines Rosie
Frederick John Glass Hugh
Kainth Jaspreet
Buttress Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Paragraf Ltd
Original Assignee
Paragraf Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB2115100.6A external-priority patent/GB202115100D0/en
Priority claimed from GBGB2203362.5A external-priority patent/GB202203362D0/en
Priority claimed from GBGB2212650.2A external-priority patent/GB202212650D0/en
Application filed by Paragraf Ltd filed Critical Paragraf Ltd
Priority to DE112022004996.0T priority Critical patent/DE112022004996T5/en
Priority to KR1020247015782A priority patent/KR20240089651A/en
Priority to PCT/GB2022/052601 priority patent/WO2023067309A1/en
Priority to TW111138985A priority patent/TWI856391B/en
Publication of GB202213912D0 publication Critical patent/GB202213912D0/en
Publication of GB2613923A publication Critical patent/GB2613923A/en
Publication of GB2613923B publication Critical patent/GB2613923B/en
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/031—Manufacture or treatment of three-or-more electrode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H10N52/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
GB2213912.5A 2021-10-21 2022-09-23 A method of producing an electronic device precursor Active GB2613923B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/GB2022/052601 WO2023067309A1 (en) 2021-10-21 2022-10-13 A method of producing an electronic device precursor
DE112022004996.0T DE112022004996T5 (en) 2021-10-21 2022-10-13 Process for producing a precursor for an electronic device
KR1020247015782A KR20240089651A (en) 2021-10-21 2022-10-13 Method for manufacturing electronic device precursors
TW111138985A TWI856391B (en) 2021-10-21 2022-10-14 A method of producing an electronic device precursor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB2115100.6A GB202115100D0 (en) 2021-10-21 2021-10-21 Magnetoresistive sensor
GBGB2203362.5A GB202203362D0 (en) 2022-03-10 2022-03-10 A method of producing an electronic device precursor
GB2212651.0A GB2613922B (en) 2021-10-21 2022-08-31 Magnetoresistive sensor
GBGB2212650.2A GB202212650D0 (en) 2022-08-31 2022-08-31 A method of producing an electronic device precursor

Publications (3)

Publication Number Publication Date
GB202213912D0 GB202213912D0 (en) 2022-11-09
GB2613923A GB2613923A (en) 2023-06-21
GB2613923B true GB2613923B (en) 2024-03-27

Family

ID=86499168

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2213912.5A Active GB2613923B (en) 2021-10-21 2022-09-23 A method of producing an electronic device precursor

Country Status (1)

Country Link
GB (1) GB2613923B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985762A (en) * 2014-03-28 2014-08-13 中国电子科技集团公司第十三研究所 Ultra-low ohm contact resistance graphene transistor and preparation method thereof
CN112038215A (en) * 2020-07-28 2020-12-04 中国计量科学研究院 Graphene carrier regulation method and graphene quantum Hall device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985762A (en) * 2014-03-28 2014-08-13 中国电子科技集团公司第十三研究所 Ultra-low ohm contact resistance graphene transistor and preparation method thereof
CN112038215A (en) * 2020-07-28 2020-12-04 中国计量科学研究院 Graphene carrier regulation method and graphene quantum Hall device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Physical Review B, vol. 96, 2017, Volkl et al., "Magnetotransport in heterostructures of transition metal dichalcogenides and graphene", pages 125405-1 to 125405-5. *

Also Published As

Publication number Publication date
GB202213912D0 (en) 2022-11-09
GB2613923A (en) 2023-06-21

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