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GB2603583B - Front end integrated circuits incorporating differing silicon-on-insulator technologies - Google Patents

Front end integrated circuits incorporating differing silicon-on-insulator technologies Download PDF

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Publication number
GB2603583B
GB2603583B GB2116305.0A GB202116305A GB2603583B GB 2603583 B GB2603583 B GB 2603583B GB 202116305 A GB202116305 A GB 202116305A GB 2603583 B GB2603583 B GB 2603583B
Authority
GB
United Kingdom
Prior art keywords
integrated circuits
end integrated
circuits incorporating
incorporating differing
insulator technologies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2116305.0A
Other versions
GB202116305D0 (en
GB2603583A (en
Inventor
Wang Hailing
Alexandre Blin Guillaume
Scott Whitefield David
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skyworks Solutions Inc
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of GB202116305D0 publication Critical patent/GB202116305D0/en
Publication of GB2603583A publication Critical patent/GB2603583A/en
Application granted granted Critical
Publication of GB2603583B publication Critical patent/GB2603583B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
GB2116305.0A 2020-11-12 2021-11-12 Front end integrated circuits incorporating differing silicon-on-insulator technologies Active GB2603583B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US202063112951P 2020-11-12 2020-11-12

Publications (3)

Publication Number Publication Date
GB202116305D0 GB202116305D0 (en) 2021-12-29
GB2603583A GB2603583A (en) 2022-08-10
GB2603583B true GB2603583B (en) 2024-09-25

Family

ID=79163718

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2116305.0A Active GB2603583B (en) 2020-11-12 2021-11-12 Front end integrated circuits incorporating differing silicon-on-insulator technologies

Country Status (5)

Country Link
JP (1) JP2022078000A (en)
CN (1) CN114497078A (en)
DE (1) DE102021212644A1 (en)
GB (1) GB2603583B (en)
TW (1) TW202236644A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11811438B2 (en) 2020-08-21 2023-11-07 Skyworks Solutions, Inc. Systems and methods for magnitude and phase trimming
US12407306B2 (en) 2021-08-04 2025-09-02 Skyworks Solutions, Inc. Radio frequency front end with integrated channel matching calibration

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060216898A1 (en) * 2005-03-28 2006-09-28 Texas Instruments Incorporated Building fully-depleted and partially-depleted transistors on same chip
US10062712B1 (en) * 2017-07-26 2018-08-28 Newport Fab, Llc Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuit
US20190057981A1 (en) * 2017-08-16 2019-02-21 Stmicroelectronics (Rousset) Sas Co-integration of bulk and soi transistors
US20190326183A1 (en) * 2018-04-24 2019-10-24 X-Fab France Method for forming a microelectronic device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658390B2 (en) * 2018-07-10 2020-05-19 Globalfoundries Inc. Virtual drain for decreased harmonic generation in fully depleted SOI (FDSOI) RF switches

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060216898A1 (en) * 2005-03-28 2006-09-28 Texas Instruments Incorporated Building fully-depleted and partially-depleted transistors on same chip
US10062712B1 (en) * 2017-07-26 2018-08-28 Newport Fab, Llc Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuit
US20190057981A1 (en) * 2017-08-16 2019-02-21 Stmicroelectronics (Rousset) Sas Co-integration of bulk and soi transistors
US20190326183A1 (en) * 2018-04-24 2019-10-24 X-Fab France Method for forming a microelectronic device

Also Published As

Publication number Publication date
JP2022078000A (en) 2022-05-24
TW202236644A (en) 2022-09-16
DE102021212644A1 (en) 2022-05-12
GB202116305D0 (en) 2021-12-29
GB2603583A (en) 2022-08-10
CN114497078A (en) 2022-05-13

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