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GB2466892B - Phosphor-converted LED devices having improved light distribution uniformity - Google Patents

Phosphor-converted LED devices having improved light distribution uniformity

Info

Publication number
GB2466892B
GB2466892B GB1005432A GB201005432A GB2466892B GB 2466892 B GB2466892 B GB 2466892B GB 1005432 A GB1005432 A GB 1005432A GB 201005432 A GB201005432 A GB 201005432A GB 2466892 B GB2466892 B GB 2466892B
Authority
GB
United Kingdom
Prior art keywords
phosphor
lens
phosphor body
led
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1005432A
Other versions
GB2466892A (en
GB201005432D0 (en
Inventor
Su Lin Oon
Hong Huat Yeoh
Siew It Pang
Meng Ee Lee
Kian Shin Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies ECBU IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/202,440 external-priority patent/US7329907B2/en
Application filed by Avago Technologies ECBU IP Singapore Pte Ltd filed Critical Avago Technologies ECBU IP Singapore Pte Ltd
Publication of GB201005432D0 publication Critical patent/GB201005432D0/en
Publication of GB2466892A publication Critical patent/GB2466892A/en
Application granted granted Critical
Publication of GB2466892B publication Critical patent/GB2466892B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8516Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H01L33/50
    • H01L33/54
    • H01L51/5036
    • H01L51/5268
    • H01L51/5275
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/854Arrangements for extracting light from the devices comprising scattering means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/858Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/07554
    • H10W72/5366
    • H10W72/547
    • H10W74/00
    • H10W90/756

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)

Abstract

A Phosphor-Converted Light emitting diode Device (NPCLD) 500 or a method of making NPCLD 500 comprising concave base housing 506, Light Emitting Diode (LED) 508 (e.g. polymer, semiconductor or laser LED) having p-doped and n-doped semiconductor bodies 510, 512 (e.g. gallium nitride, indium-gallium-nitride or gallium-aluminium-indium-nitride with emission 420-490nm), phosphor body 522, first lens 526 having flat upper surface 528 and second lens 536 having convex upper surface 538 wherein first lens 526 and phosphor body 522 have a flat interface. Phosphor body 522 may have a flat upper surface 524 and may cover LED 508. The phosphor body (122, fig. 1 and 326, fig. 3) may have a convex upper surface (124, fig. 1 and 328, fig. 3). Lenses 526, 536 may be diffused lenses having dispersed titanium dioxide or silicon dioxide particles. First lens 526 may be placed on phosphor body 522 or the phosphor body (726, fig. 7) may be formed on the first lens (722, fig. 7) which covers the LED (708, fig. 7). The phosphor body 522 may comprise a phosphor (e.g. cerium-doped yttrium-aluminium garnet with emission 550-585nm) dispersed in an encapsulant (e.g. epoxy, silicone or acrylate resin).
GB1005432A 2005-08-12 2006-08-11 Phosphor-converted LED devices having improved light distribution uniformity Expired - Fee Related GB2466892B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/202,440 US7329907B2 (en) 2005-08-12 2005-08-12 Phosphor-converted LED devices having improved light distribution uniformity
GB0616041A GB2429840B (en) 2005-08-12 2006-08-11 Phosphor-converted LED devices having improved light distribution uniformity

Publications (3)

Publication Number Publication Date
GB201005432D0 GB201005432D0 (en) 2010-05-19
GB2466892A GB2466892A (en) 2010-07-14
GB2466892B true GB2466892B (en) 2011-02-23

Family

ID=42270099

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1005432A Expired - Fee Related GB2466892B (en) 2005-08-12 2006-08-11 Phosphor-converted LED devices having improved light distribution uniformity

Country Status (1)

Country Link
GB (1) GB2466892B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0907969A1 (en) * 1996-06-26 1999-04-14 Siemens Aktiengesellschaft Light-emitting semiconductor component with luminescence conversion element
US6734465B1 (en) * 2001-11-19 2004-05-11 Nanocrystals Technology Lp Nanocrystalline based phosphors and photonic structures for solid state lighting
WO2005104247A1 (en) * 2004-04-19 2005-11-03 Matsushita Electric Industrial Co., Ltd. Method for fabricating led illumination light source and led illumination light source

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0907969A1 (en) * 1996-06-26 1999-04-14 Siemens Aktiengesellschaft Light-emitting semiconductor component with luminescence conversion element
US6734465B1 (en) * 2001-11-19 2004-05-11 Nanocrystals Technology Lp Nanocrystalline based phosphors and photonic structures for solid state lighting
WO2005104247A1 (en) * 2004-04-19 2005-11-03 Matsushita Electric Industrial Co., Ltd. Method for fabricating led illumination light source and led illumination light source

Also Published As

Publication number Publication date
GB2466892A (en) 2010-07-14
GB201005432D0 (en) 2010-05-19

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20130221 AND 20130227

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20180811