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GB2337361B - Method of etching tantalum oxide layer - Google Patents

Method of etching tantalum oxide layer

Info

Publication number
GB2337361B
GB2337361B GB9809657A GB9809657A GB2337361B GB 2337361 B GB2337361 B GB 2337361B GB 9809657 A GB9809657 A GB 9809657A GB 9809657 A GB9809657 A GB 9809657A GB 2337361 B GB2337361 B GB 2337361B
Authority
GB
United Kingdom
Prior art keywords
oxide layer
tantalum oxide
etching tantalum
etching
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9809657A
Other versions
GB2337361A (en
GB9809657D0 (en
Inventor
Yi-Chun Chung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9809657A priority Critical patent/GB2337361B/en
Priority to NL1009201A priority patent/NL1009201C2/en
Publication of GB9809657D0 publication Critical patent/GB9809657D0/en
Publication of GB2337361A publication Critical patent/GB2337361A/en
Application granted granted Critical
Publication of GB2337361B publication Critical patent/GB2337361B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P50/285—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
GB9809657A 1998-05-06 1998-05-06 Method of etching tantalum oxide layer Expired - Fee Related GB2337361B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9809657A GB2337361B (en) 1998-05-06 1998-05-06 Method of etching tantalum oxide layer
NL1009201A NL1009201C2 (en) 1998-05-06 1998-05-19 Method for etching a tantalum oxide layer.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9809657A GB2337361B (en) 1998-05-06 1998-05-06 Method of etching tantalum oxide layer
NL1009201A NL1009201C2 (en) 1998-05-06 1998-05-19 Method for etching a tantalum oxide layer.

Publications (3)

Publication Number Publication Date
GB9809657D0 GB9809657D0 (en) 1998-07-01
GB2337361A GB2337361A (en) 1999-11-17
GB2337361B true GB2337361B (en) 2000-03-29

Family

ID=26313600

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9809657A Expired - Fee Related GB2337361B (en) 1998-05-06 1998-05-06 Method of etching tantalum oxide layer

Country Status (2)

Country Link
GB (1) GB2337361B (en)
NL (1) NL1009201C2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152031A (en) * 1984-01-20 1985-08-10 Hitachi Ltd Etching method
JPH05198743A (en) * 1992-01-20 1993-08-06 Mitsubishi Electric Corp Semiconductor device
US5279985A (en) * 1991-09-19 1994-01-18 Nec Corporation Semiconductor device and method of fabrication thereof
EP0637067A2 (en) * 1993-06-16 1995-02-01 Applied Materials, Inc. Plasma etching using xenon
US5508221A (en) * 1993-12-02 1996-04-16 Nec Corporation Method for forming capacitor element of DRAM
GB2313708A (en) * 1996-05-30 1997-12-03 Nec Corp Etching aluminium alloy and titanium nitride multilayer films

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2910382B2 (en) * 1992-03-09 1999-06-23 日本電気株式会社 Method for manufacturing semiconductor device
JPH09251983A (en) * 1996-03-15 1997-09-22 Rohm Co Ltd Dry etching method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152031A (en) * 1984-01-20 1985-08-10 Hitachi Ltd Etching method
US5279985A (en) * 1991-09-19 1994-01-18 Nec Corporation Semiconductor device and method of fabrication thereof
JPH05198743A (en) * 1992-01-20 1993-08-06 Mitsubishi Electric Corp Semiconductor device
EP0637067A2 (en) * 1993-06-16 1995-02-01 Applied Materials, Inc. Plasma etching using xenon
US5508221A (en) * 1993-12-02 1996-04-16 Nec Corporation Method for forming capacitor element of DRAM
GB2313708A (en) * 1996-05-30 1997-12-03 Nec Corp Etching aluminium alloy and titanium nitride multilayer films

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, Section E, Section No 318, Vol 9,p 100, 13/12/93 & JP60-152031A (HITACHI) *
Patent Abstracts of Japan, Section E, Section No 625, Vol 17, p 166, 18/11/93 & JP5-198743A *

Also Published As

Publication number Publication date
NL1009201C2 (en) 1999-11-22
GB2337361A (en) 1999-11-17
GB9809657D0 (en) 1998-07-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060506