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GB2304997B - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
GB2304997B
GB2304997B GB9613996A GB9613996A GB2304997B GB 2304997 B GB2304997 B GB 2304997B GB 9613996 A GB9613996 A GB 9613996A GB 9613996 A GB9613996 A GB 9613996A GB 2304997 B GB2304997 B GB 2304997B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
fabricating semiconductor
fabricating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9613996A
Other languages
English (en)
Other versions
GB2304997A (en
GB9613996D0 (en
Inventor
Takayuki Hisaka
Kenji Hosogi
Naohito Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB9613996D0 publication Critical patent/GB9613996D0/en
Publication of GB2304997A publication Critical patent/GB2304997A/en
Application granted granted Critical
Publication of GB2304997B publication Critical patent/GB2304997B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10P30/222—
GB9613996A 1995-09-12 1996-07-04 Method of fabricating semiconductor device Expired - Fee Related GB2304997B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7233623A JPH0982726A (ja) 1995-09-12 1995-09-12 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
GB9613996D0 GB9613996D0 (en) 1996-09-04
GB2304997A GB2304997A (en) 1997-03-26
GB2304997B true GB2304997B (en) 1997-09-10

Family

ID=16957954

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9613996A Expired - Fee Related GB2304997B (en) 1995-09-12 1996-07-04 Method of fabricating semiconductor device

Country Status (3)

Country Link
US (1) US5728611A (ja)
JP (1) JPH0982726A (ja)
GB (1) GB2304997B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000013211A2 (en) * 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
US7005081B2 (en) * 2001-07-05 2006-02-28 Canon Kabushiki Kaisha Base material cutting method, base material cutting apparatus, ingot cutting method, ingot cutting apparatus and wafer producing method
US6881967B1 (en) * 2004-01-22 2005-04-19 Axcelis Technologies, Inc. Method of correction for wafer crystal cut error in semiconductor processing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771012A (en) * 1986-06-13 1988-09-13 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
JPS63226922A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 半導体装置の製造方法
JPS63233567A (ja) * 1987-03-23 1988-09-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH1033924A (ja) * 1996-07-25 1998-02-10 Tec Corp 空気清浄器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6433924A (en) * 1987-07-29 1989-02-03 Sony Corp Semiconductor wafer
JPH06232170A (ja) * 1993-01-29 1994-08-19 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771012A (en) * 1986-06-13 1988-09-13 Matsushita Electric Industrial Co., Ltd. Method of making symmetrically controlled implanted regions using rotational angle of the substrate
JPS63226922A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 半導体装置の製造方法
JPS63233567A (ja) * 1987-03-23 1988-09-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JPH1033924A (ja) * 1996-07-25 1998-02-10 Tec Corp 空気清浄器

Also Published As

Publication number Publication date
GB2304997A (en) 1997-03-26
GB9613996D0 (en) 1996-09-04
JPH0982726A (ja) 1997-03-28
US5728611A (en) 1998-03-17

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20050704