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GB2358944A - Method and apparatus to control the temperature of a component - Google Patents

Method and apparatus to control the temperature of a component

Info

Publication number
GB2358944A
GB2358944A GB0103092A GB0103092A GB2358944A GB 2358944 A GB2358944 A GB 2358944A GB 0103092 A GB0103092 A GB 0103092A GB 0103092 A GB0103092 A GB 0103092A GB 2358944 A GB2358944 A GB 2358944A
Authority
GB
United Kingdom
Prior art keywords
component
temperature
memory device
control
dependance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0103092A
Other versions
GB0103092D0 (en
GB2358944B (en
Inventor
Satchitanand Jain
Dennis Reinhardt
Sung-Soo Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB0103092D0 publication Critical patent/GB0103092D0/en
Publication of GB2358944A publication Critical patent/GB2358944A/en
Application granted granted Critical
Publication of GB2358944B publication Critical patent/GB2358944B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Control Of Temperature (AREA)

Abstract

When a component, such as a memory device, exhibits an overtemperature condition (e.g., exceeds a first threshold value), the data transmission rate with respect to the component is reduced so as to lower its operating temperature. In one embodiment, this is achieved by changing the latency at which data packets are transmitted to and from the memory device in dependance on the temperature of the device. Controlling temperature in such a fashion allows for efficient use of the component over a large range of temperatures.
GB0103092A 1998-08-18 1999-08-13 Method and apparatus to control the temperature of a component Expired - Fee Related GB2358944B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13621398A 1998-08-18 1998-08-18
PCT/US1999/018433 WO2000011675A1 (en) 1998-08-18 1999-08-13 Method and apparatus to control the temperature of a component

Publications (3)

Publication Number Publication Date
GB0103092D0 GB0103092D0 (en) 2001-03-28
GB2358944A true GB2358944A (en) 2001-08-08
GB2358944B GB2358944B (en) 2002-12-11

Family

ID=22471860

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0103092A Expired - Fee Related GB2358944B (en) 1998-08-18 1999-08-13 Method and apparatus to control the temperature of a component

Country Status (6)

Country Link
CN (1) CN1263037C (en)
AU (1) AU5398199A (en)
DE (1) DE19983470B4 (en)
GB (1) GB2358944B (en)
HK (1) HK1041975B (en)
WO (1) WO2000011675A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7269481B2 (en) 2003-06-25 2007-09-11 Intel Corporation Method and apparatus for memory bandwidth thermal budgetting
US8122187B2 (en) 2004-07-02 2012-02-21 Qualcomm Incorporated Refreshing dynamic volatile memory
US7454586B2 (en) * 2005-03-30 2008-11-18 Intel Corporation Memory device commands
US9262326B2 (en) 2006-08-14 2016-02-16 Qualcomm Incorporated Method and apparatus to enable the cooperative signaling of a shared bus interrupt in a multi-rank memory subsystem
CN102014201B (en) * 2010-09-29 2014-04-30 中兴通讯股份有限公司 Data card temperature control method and device
US10088880B2 (en) * 2015-08-27 2018-10-02 Intel Corporation Thermal monitoring of memory resources
CN107678986B (en) * 2017-09-28 2021-06-22 惠州Tcl移动通信有限公司 USB3.0 transmission rate setting method, mobile terminal and storage medium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276843A (en) * 1991-04-12 1994-01-04 Micron Technology, Inc. Dynamic RAM array for emulating a static RAM array
US5446696A (en) * 1993-05-28 1995-08-29 Rambus, Inc. Method and apparatus for implementing refresh in a synchronous DRAM system
EP0851427A2 (en) * 1996-12-23 1998-07-01 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a dram array

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916263A (en) * 1971-12-13 1975-10-28 Honeywell Inf Systems Memory driver circuit with thermal protection
US4881057A (en) * 1987-09-28 1989-11-14 Ranco Incorporated Temperature sensing apparatus and method of making same
US5451892A (en) * 1994-10-03 1995-09-19 Advanced Micro Devices Clock control technique and system for a microprocessor including a thermal sensor
JP4090088B2 (en) * 1996-09-17 2008-05-28 富士通株式会社 Semiconductor device system and semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276843A (en) * 1991-04-12 1994-01-04 Micron Technology, Inc. Dynamic RAM array for emulating a static RAM array
US5446696A (en) * 1993-05-28 1995-08-29 Rambus, Inc. Method and apparatus for implementing refresh in a synchronous DRAM system
EP0851427A2 (en) * 1996-12-23 1998-07-01 Lsi Logic Corporation Memory system including an on-chip temperature sensor for regulating the refresh rate of a dram array

Also Published As

Publication number Publication date
HK1041975B (en) 2007-02-23
AU5398199A (en) 2000-03-14
DE19983470B4 (en) 2011-08-18
WO2000011675A1 (en) 2000-03-02
CN1328687A (en) 2001-12-26
GB0103092D0 (en) 2001-03-28
DE19983470T1 (en) 2001-07-12
GB2358944B (en) 2002-12-11
HK1041975A1 (en) 2002-07-26
CN1263037C (en) 2006-07-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20150813