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GB2345286B - Photoresist copolymer, process for preparing the same and photoresist composition comprising the same - Google Patents

Photoresist copolymer, process for preparing the same and photoresist composition comprising the same

Info

Publication number
GB2345286B
GB2345286B GB9929650A GB9929650A GB2345286B GB 2345286 B GB2345286 B GB 2345286B GB 9929650 A GB9929650 A GB 9929650A GB 9929650 A GB9929650 A GB 9929650A GB 2345286 B GB2345286 B GB 2345286B
Authority
GB
United Kingdom
Prior art keywords
same
photoresist
preparing
copolymer
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9929650A
Other versions
GB2345286A (en
GB9929650D0 (en
Inventor
Jae-Chang Jung
Keun Kyu Kong
Min Ho Jung
Geun Su Lee
Ki Ho Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9929650D0 publication Critical patent/GB9929650D0/en
Publication of GB2345286A publication Critical patent/GB2345286A/en
Application granted granted Critical
Publication of GB2345286B publication Critical patent/GB2345286B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10—Esters
    • C08F22/1006—Esters of polyhydric alcohols or polyhydric phenols, e.g. ethylene glycol dimethacrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
GB9929650A 1998-12-31 1999-12-15 Photoresist copolymer, process for preparing the same and photoresist composition comprising the same Expired - Fee Related GB2345286B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1998-0063793A KR100362937B1 (en) 1998-12-31 1998-12-31 Novel photoresist crosslinkers, photoresist polymers and photoresist compositions comprising them

Publications (3)

Publication Number Publication Date
GB9929650D0 GB9929650D0 (en) 2000-02-09
GB2345286A GB2345286A (en) 2000-07-05
GB2345286B true GB2345286B (en) 2004-06-30

Family

ID=19570347

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9929650A Expired - Fee Related GB2345286B (en) 1998-12-31 1999-12-15 Photoresist copolymer, process for preparing the same and photoresist composition comprising the same

Country Status (9)

Country Link
JP (1) JP4001445B2 (en)
KR (1) KR100362937B1 (en)
CN (1) CN1303114C (en)
DE (1) DE19960506A1 (en)
FR (1) FR2788062B1 (en)
GB (1) GB2345286B (en)
IT (1) IT1308679B1 (en)
NL (1) NL1013916C2 (en)
TW (1) TWI222968B (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208260B2 (en) * 1998-12-31 2007-04-24 Hynix Semiconductor Inc. Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
KR100557608B1 (en) * 1999-02-10 2006-03-10 주식회사 하이닉스반도체 Novel photoresist crosslinking agent and photoresist composition using same
KR100557609B1 (en) * 1999-02-22 2006-03-10 주식회사 하이닉스반도체 Novel photoresist crosslinking agent and photoresist composition using same
KR100647379B1 (en) 1999-07-30 2006-11-17 주식회사 하이닉스반도체 Novel photoresist monomers, copolymers thereof and photoresist compositions using the same
US6818376B2 (en) 1999-08-23 2004-11-16 Hynix Semiconductor Inc. Cross-linker monomer comprising double bond and photoresist copolymer containing the same
KR100520183B1 (en) 1999-08-23 2005-10-10 주식회사 하이닉스반도체 Photoresist copolymer containing crosslinker which has two double bonds
KR100546110B1 (en) * 2000-01-21 2006-01-24 주식회사 하이닉스반도체 Photoresist Crosslinking Agent and Photoresist Composition Containing the Same
US6664022B1 (en) * 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
KR20020082006A (en) * 2001-04-23 2002-10-30 금호석유화학 주식회사 Novel acid-labile polymer and formulation material using an acid-labile polymer
US7138218B2 (en) 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US7338742B2 (en) 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (en) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Photoresist composition for EV and photoresist pattern forming method using same
JP4979477B2 (en) * 2004-03-08 2012-07-18 三菱レイヨン株式会社 Resist polymer, resist composition, pattern manufacturing method, and resist polymer raw material compound
KR101266564B1 (en) * 2005-08-03 2013-05-22 제이에스알 가부시끼가이샤 Positive type radiation sensitive resin composition for production of plated shaped body transfer film and method for producing plated shaped body
KR100694412B1 (en) 2006-02-24 2007-03-12 주식회사 하이닉스반도체 Micro pattern formation method of semiconductor device
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
JP5233985B2 (en) * 2007-02-26 2013-07-10 Ｊｓｒ株式会社 Resin composition for forming fine pattern and method for forming fine pattern
EP3356450B1 (en) 2015-09-28 2019-10-23 3M Innovative Properties Company Patterned film article comprising cleavable crosslinker and methods
CN116102938B (en) * 2021-11-09 2023-10-20 上海新阳半导体材料股份有限公司 Bottom anti-reflection coating for deep ultraviolet lithography and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2057752A5 (en) * 1969-08-04 1971-05-21 Ford France
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
WO1992007022A1 (en) * 1990-10-23 1992-04-30 Atomic Energy Of Canada Limited Process for the preparation of cellulosic fibre-reinforced thermoplastic composite materials
US5777068A (en) * 1994-09-13 1998-07-07 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1275471A (en) * 1969-06-04 1972-05-24 Du Pont Improvements relating to photo-resists
JPS5713444A (en) * 1980-06-27 1982-01-23 Tamura Kaken Kk Photosensitive composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2057752A5 (en) * 1969-08-04 1971-05-21 Ford France
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
WO1992007022A1 (en) * 1990-10-23 1992-04-30 Atomic Energy Of Canada Limited Process for the preparation of cellulosic fibre-reinforced thermoplastic composite materials
US5777068A (en) * 1994-09-13 1998-07-07 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition

Also Published As

Publication number Publication date
JP4001445B2 (en) 2007-10-31
KR20000047041A (en) 2000-07-25
CN1258670A (en) 2000-07-05
GB2345286A (en) 2000-07-05
ITTO991137A0 (en) 1999-12-21
IT1308679B1 (en) 2002-01-09
CN1303114C (en) 2007-03-07
DE19960506A1 (en) 2000-09-07
FR2788062A1 (en) 2000-07-07
NL1013916A1 (en) 2000-07-03
KR100362937B1 (en) 2003-10-04
ITTO991137A1 (en) 2001-06-21
FR2788062B1 (en) 2004-09-10
NL1013916C2 (en) 2002-12-03
GB9929650D0 (en) 2000-02-09
JP2000199951A (en) 2000-07-18
TWI222968B (en) 2004-11-01

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20151215