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GB2219137B - Semiconductor devices and methods of making the same - Google Patents

Semiconductor devices and methods of making the same

Info

Publication number
GB2219137B
GB2219137B GB8915454A GB8915454A GB2219137B GB 2219137 B GB2219137 B GB 2219137B GB 8915454 A GB8915454 A GB 8915454A GB 8915454 A GB8915454 A GB 8915454A GB 2219137 B GB2219137 B GB 2219137B
Authority
GB
United Kingdom
Prior art keywords
making
methods
same
semiconductor devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8915454A
Other versions
GB2219137A (en
GB8915454D0 (en
Inventor
Peter Fred Blomley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LSI Logic Europe Ltd
Original Assignee
LSI Logic Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LSI Logic Europe Ltd filed Critical LSI Logic Europe Ltd
Publication of GB8915454D0 publication Critical patent/GB8915454D0/en
Publication of GB2219137A publication Critical patent/GB2219137A/en
Application granted granted Critical
Publication of GB2219137B publication Critical patent/GB2219137B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W20/021—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
GB8915454A 1987-11-11 1988-11-11 Semiconductor devices and methods of making the same Expired - Fee Related GB2219137B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB878726367A GB8726367D0 (en) 1987-11-11 1987-11-11 Cmos devices
PCT/GB1988/000996 WO1989004555A1 (en) 1987-11-11 1988-11-11 Bipolar transistor devices and methods of making the same

Publications (3)

Publication Number Publication Date
GB8915454D0 GB8915454D0 (en) 1989-08-23
GB2219137A GB2219137A (en) 1989-11-29
GB2219137B true GB2219137B (en) 1990-10-24

Family

ID=10626764

Family Applications (2)

Application Number Title Priority Date Filing Date
GB878726367A Pending GB8726367D0 (en) 1987-11-11 1987-11-11 Cmos devices
GB8915454A Expired - Fee Related GB2219137B (en) 1987-11-11 1988-11-11 Semiconductor devices and methods of making the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB878726367A Pending GB8726367D0 (en) 1987-11-11 1987-11-11 Cmos devices

Country Status (5)

Country Link
EP (1) EP0346409A1 (en)
JP (1) JPH02502956A (en)
AU (1) AU2620888A (en)
GB (2) GB8726367D0 (en)
WO (1) WO1989004555A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
FR2531812A1 (en) * 1982-08-13 1984-02-17 Hitachi Ltd "BI-CMOS-IC" TYPE INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE AND ITS MANUFACTURING PROCESS
EP0189136A2 (en) * 1985-01-17 1986-07-30 Kabushiki Kaisha Toshiba Bipolar semiconductor device and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4283236A (en) * 1979-09-19 1981-08-11 Harris Corporation Method of fabricating lateral PNP transistors utilizing selective diffusion and counter doping
FR2531812A1 (en) * 1982-08-13 1984-02-17 Hitachi Ltd "BI-CMOS-IC" TYPE INTEGRATED SEMICONDUCTOR CIRCUIT DEVICE AND ITS MANUFACTURING PROCESS
EP0189136A2 (en) * 1985-01-17 1986-07-30 Kabushiki Kaisha Toshiba Bipolar semiconductor device and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN,VOL 25,NO 4,SE *

Also Published As

Publication number Publication date
EP0346409A1 (en) 1989-12-20
GB2219137A (en) 1989-11-29
AU2620888A (en) 1989-06-01
JPH02502956A (en) 1990-09-13
WO1989004555A1 (en) 1989-05-18
GB8915454D0 (en) 1989-08-23
GB8726367D0 (en) 1987-12-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941111