IL84076A0 - Striped-channel transistor and method of forming the same - Google Patents
Striped-channel transistor and method of forming the sameInfo
- Publication number
- IL84076A0 IL84076A0 IL84076A IL8407687A IL84076A0 IL 84076 A0 IL84076 A0 IL 84076A0 IL 84076 A IL84076 A IL 84076A IL 8407687 A IL8407687 A IL 8407687A IL 84076 A0 IL84076 A0 IL 84076A0
- Authority
- IL
- Israel
- Prior art keywords
- striped
- forming
- same
- channel transistor
- transistor
- Prior art date
Links
Classifications
-
- H10P30/21—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
-
- H10P30/206—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US92355286A | 1986-10-27 | 1986-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL84076A0 true IL84076A0 (en) | 1988-03-31 |
Family
ID=25448869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL84076A IL84076A0 (en) | 1986-10-27 | 1987-10-02 | Striped-channel transistor and method of forming the same |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0287658A1 (en) |
| JP (1) | JPH01501272A (en) |
| IL (1) | IL84076A0 (en) |
| WO (1) | WO1988003328A1 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05114615A (en) * | 1991-10-21 | 1993-05-07 | Rohm Co Ltd | Compound semiconductor device and manufacturing method thereof |
| CA2129327A1 (en) * | 1993-08-03 | 1995-02-04 | Nobuo Shiga | Field effect transistor |
| GB2355589B (en) * | 1996-01-22 | 2001-05-30 | Fuji Electric Co Ltd | Semiconductor device |
| JP4014676B2 (en) | 1996-08-13 | 2007-11-28 | 株式会社半導体エネルギー研究所 | Insulated gate type semiconductor device and manufacturing method thereof |
| JP3949193B2 (en) | 1996-08-13 | 2007-07-25 | 株式会社半導体エネルギー研究所 | Insulated gate type semiconductor device |
| JP3634086B2 (en) * | 1996-08-13 | 2005-03-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing insulated gate type semiconductor device |
| JP4014677B2 (en) * | 1996-08-13 | 2007-11-28 | 株式会社半導体エネルギー研究所 | Insulated gate type semiconductor device |
| US6703671B1 (en) | 1996-08-23 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate semiconductor device and method of manufacturing the same |
| JP4059939B2 (en) * | 1996-08-23 | 2008-03-12 | 株式会社半導体エネルギー研究所 | Power MOS device and manufacturing method thereof |
| JP4103968B2 (en) * | 1996-09-18 | 2008-06-18 | 株式会社半導体エネルギー研究所 | Insulated gate type semiconductor device |
| KR100500033B1 (en) | 1996-10-15 | 2005-09-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | A semiconductor device |
| US6118148A (en) * | 1996-11-04 | 2000-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP4104701B2 (en) | 1997-06-26 | 2008-06-18 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP3859821B2 (en) | 1997-07-04 | 2006-12-20 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP4017706B2 (en) | 1997-07-14 | 2007-12-05 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| US6686623B2 (en) | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
| JPH11233788A (en) * | 1998-02-09 | 1999-08-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JP4275336B2 (en) | 2001-11-16 | 2009-06-10 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1306187A (en) * | 1960-09-26 | 1962-10-13 | Westinghouse Electric Corp | Unipolar transistor |
| DE2852621C4 (en) * | 1978-12-05 | 1995-11-30 | Siemens Ag | Insulating layer field-effect transistor with a drift path between the gate electrode and drain zone |
| EP0167810A1 (en) * | 1984-06-08 | 1986-01-15 | Eaton Corporation | Power JFET with plural lateral pinching |
-
1987
- 1987-09-21 JP JP63500632A patent/JPH01501272A/en active Pending
- 1987-09-21 EP EP88900270A patent/EP0287658A1/en not_active Withdrawn
- 1987-09-21 WO PCT/US1987/002379 patent/WO1988003328A1/en not_active Ceased
- 1987-10-02 IL IL84076A patent/IL84076A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01501272A (en) | 1989-04-27 |
| EP0287658A1 (en) | 1988-10-26 |
| WO1988003328A1 (en) | 1988-05-05 |
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