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GB2275569B - Semiconductor device and method of making same - Google Patents

Semiconductor device and method of making same

Info

Publication number
GB2275569B
GB2275569B GB9303664A GB9303664A GB2275569B GB 2275569 B GB2275569 B GB 2275569B GB 9303664 A GB9303664 A GB 9303664A GB 9303664 A GB9303664 A GB 9303664A GB 2275569 B GB2275569 B GB 2275569B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
making same
making
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9303664A
Other versions
GB2275569A (en
GB9303664D0 (en
Inventor
Atsushi Kurobe
Jeremy Henley Burroughes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9303664A priority Critical patent/GB2275569B/en
Publication of GB9303664D0 publication Critical patent/GB9303664D0/en
Publication of GB2275569A publication Critical patent/GB2275569A/en
Application granted granted Critical
Publication of GB2275569B publication Critical patent/GB2275569B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P30/206
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/40FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149Source or drain regions of field-effect devices
    • H10D62/161Source or drain regions of field-effect devices of FETs having Schottky gates
    • H10D64/0116
    • H10P30/208
GB9303664A 1993-02-24 1993-02-24 Semiconductor device and method of making same Expired - Fee Related GB2275569B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9303664A GB2275569B (en) 1993-02-24 1993-02-24 Semiconductor device and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9303664A GB2275569B (en) 1993-02-24 1993-02-24 Semiconductor device and method of making same

Publications (3)

Publication Number Publication Date
GB9303664D0 GB9303664D0 (en) 1993-04-14
GB2275569A GB2275569A (en) 1994-08-31
GB2275569B true GB2275569B (en) 1996-08-07

Family

ID=10730925

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9303664A Expired - Fee Related GB2275569B (en) 1993-02-24 1993-02-24 Semiconductor device and method of making same

Country Status (1)

Country Link
GB (1) GB2275569B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5606184A (en) * 1995-05-04 1997-02-25 Motorola, Inc. Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making
US6087207A (en) * 1998-09-29 2000-07-11 Raytheon Company Method of making pseudomorphic high electron mobility transistors
US7781801B2 (en) * 2006-09-25 2010-08-24 Alcatel-Lucent Usa Inc. Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes
FR2914500B1 (en) * 2007-03-30 2009-11-20 Picogiga Internat IMPROVED OHMICALLY CONTACT ELECTRONIC DEVICE

Also Published As

Publication number Publication date
GB2275569A (en) 1994-08-31
GB9303664D0 (en) 1993-04-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20120224