GB2275569B - Semiconductor device and method of making same - Google Patents
Semiconductor device and method of making sameInfo
- Publication number
- GB2275569B GB2275569B GB9303664A GB9303664A GB2275569B GB 2275569 B GB2275569 B GB 2275569B GB 9303664 A GB9303664 A GB 9303664A GB 9303664 A GB9303664 A GB 9303664A GB 2275569 B GB2275569 B GB 2275569B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- making same
- making
- same
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10P30/206—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/161—Source or drain regions of field-effect devices of FETs having Schottky gates
-
- H10D64/0116—
-
- H10P30/208—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9303664A GB2275569B (en) | 1993-02-24 | 1993-02-24 | Semiconductor device and method of making same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9303664A GB2275569B (en) | 1993-02-24 | 1993-02-24 | Semiconductor device and method of making same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9303664D0 GB9303664D0 (en) | 1993-04-14 |
| GB2275569A GB2275569A (en) | 1994-08-31 |
| GB2275569B true GB2275569B (en) | 1996-08-07 |
Family
ID=10730925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9303664A Expired - Fee Related GB2275569B (en) | 1993-02-24 | 1993-02-24 | Semiconductor device and method of making same |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2275569B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5606184A (en) * | 1995-05-04 | 1997-02-25 | Motorola, Inc. | Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
| US6087207A (en) * | 1998-09-29 | 2000-07-11 | Raytheon Company | Method of making pseudomorphic high electron mobility transistors |
| US7781801B2 (en) * | 2006-09-25 | 2010-08-24 | Alcatel-Lucent Usa Inc. | Field-effect transistors whose gate electrodes are over semiconductor heterostructures and parts of source and drain electrodes |
| FR2914500B1 (en) * | 2007-03-30 | 2009-11-20 | Picogiga Internat | IMPROVED OHMICALLY CONTACT ELECTRONIC DEVICE |
-
1993
- 1993-02-24 GB GB9303664A patent/GB2275569B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2275569A (en) | 1994-08-31 |
| GB9303664D0 (en) | 1993-04-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20120224 |