GB2271073B - Method of producing a semiconductor device - Google Patents
Method of producing a semiconductor deviceInfo
- Publication number
- GB2271073B GB2271073B GB9323785A GB9323785A GB2271073B GB 2271073 B GB2271073 B GB 2271073B GB 9323785 A GB9323785 A GB 9323785A GB 9323785 A GB9323785 A GB 9323785A GB 2271073 B GB2271073 B GB 2271073B
- Authority
- GB
- United Kingdom
- Prior art keywords
- ball
- copper
- electrode pad
- less
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10W72/019—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H10W72/07141—
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- H10W72/073—
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- H10W72/07336—
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- H10W72/075—
-
- H10W72/07533—
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- H10W72/352—
-
- H10W72/354—
-
- H10W72/536—
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- H10W72/5363—
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- H10W72/5522—
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- H10W72/5525—
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- H10W72/59—
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- H10W72/884—
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- H10W72/952—
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- H10W72/983—
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- H10W74/00—
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- H10W90/736—
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- H10W90/756—
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- H10W99/00—
Landscapes
- Wire Bonding (AREA)
Abstract
Electrical connection to an A1 electrode of a semiconductor is made by the attachment of a copper wire. A copper ball 8a formed by flaming out one end of a copper wire 8 is moved downward to an A1 electrode pad 5 on a semiconductor chip and brought into contact for less than 150 ms. Plastic deformation then occurs so that the copper ball is pressed to the aluminium electrode pad in such a manner that the height of the copper ball (h, Fig. 8) is 25 mu m or less. It is therefore possible to decrease the work hardening property of the Cu ball and prevent A1 exclusion when the Cu ball is bonded to the A1 electrode pad. <IMAGE>
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001467A JPH03208355A (en) | 1990-01-10 | 1990-01-10 | Semiconductor device and manufacture thereof |
| GB9010385A GB2239829B (en) | 1990-01-10 | 1990-05-09 | Semiconductor device and method of producing the same |
| SG155894A SG155894G (en) | 1990-01-10 | 1994-10-21 | Semiconductor device and method of producing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9323785D0 GB9323785D0 (en) | 1994-01-05 |
| GB2271073A GB2271073A (en) | 1994-04-06 |
| GB2271073B true GB2271073B (en) | 1994-06-29 |
Family
ID=27265081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9323785A Expired - Fee Related GB2271073B (en) | 1990-01-10 | 1993-11-18 | Method of producing a semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2271073B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4444349A (en) * | 1981-05-04 | 1984-04-24 | Kulicke & Soffa Industries, Inc. | Wire bonding apparatus |
| GB2174032A (en) * | 1985-03-01 | 1986-10-29 | Mitsubishi Electric Corp | Ball-type bonding wires for semiconductor devices and method for producing same |
-
1993
- 1993-11-18 GB GB9323785A patent/GB2271073B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4444349A (en) * | 1981-05-04 | 1984-04-24 | Kulicke & Soffa Industries, Inc. | Wire bonding apparatus |
| GB2174032A (en) * | 1985-03-01 | 1986-10-29 | Mitsubishi Electric Corp | Ball-type bonding wires for semiconductor devices and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9323785D0 (en) | 1994-01-05 |
| GB2271073A (en) | 1994-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19950519 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20080509 |