GB2190241B - Method of making a semiconductor device - Google Patents

Method of making a semiconductor device

Info

Publication number: GB2190241B
Authority: GB; United Kingdom
Prior art keywords: making; semiconductor device; semiconductor
Prior art date: 1986-05-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB8710281A

Other versions

GB8710281D0 (en

GB2190241A (en

Inventor

Isamu Namose

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Seiko Epson Corp

Original Assignee

Seiko Epson Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-05-09

Filing date

1987-04-30

Publication date

1989-12-13

1987-03-09 Priority claimed from JP62053453A external-priority patent/JPS63184352A/en

1987-04-30 Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp

1987-06-03 Publication of GB8710281D0 publication Critical patent/GB8710281D0/en

1987-11-11 Publication of GB2190241A publication Critical patent/GB2190241A/en

1989-12-13 Application granted granted Critical

1989-12-13 Publication of GB2190241B publication Critical patent/GB2190241B/en

Status Expired legal-status Critical Current

Classifications

- H10W10/0143—
- H10W10/012—
- H10W10/0147—
- H10W10/0148—
- H10W10/13—
- H10W10/17—

GB8710281A 1986-05-09 1987-04-30 Method of making a semiconductor device Expired GB2190241B (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP10596586		1986-05-09
JP22770986		1986-09-26
JP62053453A JPS63184352A (en)	1986-05-09	1987-03-09	Manufacturing method of semiconductor device

Publications (3)

Publication Number	Publication Date
GB8710281D0 GB8710281D0 (en)	1987-06-03
GB2190241A GB2190241A (en)	1987-11-11
GB2190241B true GB2190241B (en)	1989-12-13

Family

ID=27294953

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB8710281A Expired GB2190241B (en)	1986-05-09	1987-04-30	Method of making a semiconductor device

Country Status (6)

Country	Link
DE (1)	DE3715092A1 (en)
FR (1)	FR2598557B1 (en)
GB (1)	GB2190241B (en)
HK (1)	HK28791A (en)
NL (1)	NL190591C (en)
SG (1)	SG60090G (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IT1189143B (en) *	1986-05-16	1988-01-28	Sgs Microelettronica Spa	PROCEDURE FOR THE IMPLEMENTATION OF THE INSULATION OF INTEGRATED CIRCUITS WITH A VERY HIGH INTEGRATION SCALE, IN PARTICULAR IN MOS AND CMOS TECHNOLOGY
JPH0442948A (en) *	1990-06-06	1992-02-13	Mitsubishi Electric Corp	Manufacture of semiconductor device
KR920020676A (en) *	1991-04-09	1992-11-21	김광호	Device Separation Method of Semiconductor Device
JPH0574927A (en) *	1991-09-13	1993-03-26	Nec Corp	Method for manufacturing semiconductor device
KR0147630B1 (en) *	1995-04-21	1998-11-02	김광호	Device Separation Method of Semiconductor Device
KR980006053A (en) *	1996-06-26	1998-03-30	문정환	Method for forming a separation film of a semiconductor device
CN102683290A (en) *	2011-03-08	2012-09-19	无锡华润上华半导体有限公司	ROM (read only memory) device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0044082A2 (en) *	1980-07-16	1982-01-20	Kabushiki Kaisha Toshiba	Method of manufacturing a semiconductor device comprising a dielectric insulating region

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL170348C (en) *	1970-07-10	1982-10-18	Philips Nv	METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE APPLYING TO A SURFACE OF A SEMICONDUCTOR BODY AGAINST DOTTING AND AGAINST THERMAL OXIDICATION MASK MATERIAL, PRE-FRIENDLY COVERING THE WINDOWS OF THE WINDOWS IN THE MATERIALS The semiconductor body with the mask is subjected to a thermal oxidation treatment to form an oxide pattern that at least partially fills in the recesses.
JPS5578540A (en) *	1978-12-08	1980-06-13	Hitachi Ltd	Manufacture of semiconductor device
US4238278A (en) *	1979-06-14	1980-12-09	International Business Machines Corporation	Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
JPS5694646A (en) *	1979-12-28	1981-07-31	Fujitsu Ltd	Forming method for oxidized film
JPS5694647A (en) *	1979-12-28	1981-07-31	Fujitsu Ltd	Forming method for oxidized film
JPS5893342A (en) *	1981-11-30	1983-06-03	Toshiba Corp	Manufacture of semiconductor device
US4435446A (en) *	1982-11-15	1984-03-06	Hewlett-Packard Company	Edge seal with polysilicon in LOCOS process
JPS6054453A (en) *	1983-09-05	1985-03-28	Oki Electric Ind Co Ltd	Manufacture of semiconductor integrated circuit device

1987
- 1987-04-27 FR FR878705903A patent/FR2598557B1/en not_active Expired - Lifetime
- 1987-04-30 GB GB8710281A patent/GB2190241B/en not_active Expired
- 1987-05-06 DE DE19873715092 patent/DE3715092A1/en active Granted
- 1987-05-08 NL NL8701087A patent/NL190591C/en not_active IP Right Cessation
1990
- 1990-07-19 SG SG60090A patent/SG60090G/en unknown
1991
- 1991-04-18 HK HK287/91A patent/HK28791A/en not_active IP Right Cessation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0044082A2 (en) *	1980-07-16	1982-01-20	Kabushiki Kaisha Toshiba	Method of manufacturing a semiconductor device comprising a dielectric insulating region

Also Published As

Publication number	Publication date
GB8710281D0 (en)	1987-06-03
FR2598557A1 (en)	1987-11-13
SG60090G (en)	1990-09-07
NL190591C (en)	1994-05-02
GB2190241A (en)	1987-11-11
FR2598557B1 (en)	1990-03-30
DE3715092A1 (en)	1987-11-12
HK28791A (en)	1991-04-26
NL8701087A (en)	1987-12-01
NL190591B (en)	1993-12-01
DE3715092C2 (en)	1993-07-29

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Legal Events

Date	Code	Title	Description
2007-05-23	PE20	Patent expired after termination of 20 years	Effective date: 20070429