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GB201607360D0 - Low temperature polycrystalline silicon thin film precleaning method and preparation method, and system for making low temperature polycrystalline silicon - Google Patents

Low temperature polycrystalline silicon thin film precleaning method and preparation method, and system for making low temperature polycrystalline silicon

Info

Publication number
GB201607360D0
GB201607360D0 GBGB1607360.3A GB201607360A GB201607360D0 GB 201607360 D0 GB201607360 D0 GB 201607360D0 GB 201607360 A GB201607360 A GB 201607360A GB 201607360 D0 GB201607360 D0 GB 201607360D0
Authority
GB
United Kingdom
Prior art keywords
low temperature
polycrystalline silicon
temperature polycrystalline
preparation
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1607360.3A
Other versions
GB2535369A (en
GB2535369B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of GB201607360D0 publication Critical patent/GB201607360D0/en
Publication of GB2535369A publication Critical patent/GB2535369A/en
Application granted granted Critical
Publication of GB2535369B publication Critical patent/GB2535369B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H10P70/15—
    • H10P70/20—
    • H10P34/42—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • H10P14/27—
    • H10P14/2922—
    • H10P14/3238—
    • H10P14/3246—
    • H10P14/3411—
    • H10P14/3454—
    • H10P14/3456—
    • H10P14/3602—
    • H10P14/3808—
    • H10P14/3816—
    • H10P70/27—
    • H10P72/0414—
    • H10P72/0431—
    • H10P72/0434—
    • H10P72/0468—
    • H10P95/04—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Recrystallisation Techniques (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
GB1607360.3A 2013-12-25 2013-12-27 Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof Expired - Fee Related GB2535369B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310728592.4A CN103681244B (en) 2013-12-25 2013-12-25 The preparation method of low-temperature polysilicon film and manufacturing system thereof
PCT/CN2013/090627 WO2015096113A1 (en) 2013-12-25 2013-12-27 Low temperature polycrystalline silicon thin film precleaning method and preparation method, and system for making low temperature polycrystalline silicon thin film

Publications (3)

Publication Number Publication Date
GB201607360D0 true GB201607360D0 (en) 2016-06-15
GB2535369A GB2535369A (en) 2016-08-17
GB2535369B GB2535369B (en) 2018-12-05

Family

ID=50318455

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1607360.3A Expired - Fee Related GB2535369B (en) 2013-12-25 2013-12-27 Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof

Country Status (8)

Country Link
US (1) US9287108B2 (en)
JP (1) JP6286547B2 (en)
KR (1) KR101944598B1 (en)
CN (1) CN103681244B (en)
DE (1) DE112013007733T5 (en)
GB (1) GB2535369B (en)
RU (1) RU2647561C2 (en)
WO (1) WO2015096113A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104037060B (en) * 2014-05-14 2017-06-30 京东方科技集团股份有限公司 The preparation method of polycrystalline metal oxide figure
CN104597609A (en) 2015-02-06 2015-05-06 京东方科技集团股份有限公司 Pixel array, display device and display method
CN106024707B (en) * 2016-08-10 2018-11-13 昆山国显光电有限公司 Array substrate and preparation method thereof
CN106981416B (en) * 2017-05-17 2019-11-26 武汉华星光电技术有限公司 Utilize the system and its bogey of quasi-molecule laser annealing production low temperature polycrystalline silicon
CN107275198B (en) * 2017-05-31 2020-03-10 昆山国显光电有限公司 Laser annealing method and laser annealing system
CN109643657B (en) * 2017-06-22 2022-08-16 深圳市柔宇科技股份有限公司 Manufacturing equipment and manufacturing method of array substrate
CN108155118A (en) * 2017-12-06 2018-06-12 中建材浚鑫科技有限公司 A kind of polysilicon chip cleaning system and its cleaning method
CN108231558B (en) * 2018-01-02 2020-07-28 京东方科技集团股份有限公司 Excimer laser annealing temperature control system and method and annealing device
FR3114251B1 (en) * 2020-09-22 2023-04-28 Commissariat Energie Atomique Device and method for manufacturing a crystalline conversion layer from a solution

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833545B2 (en) * 1995-03-06 1998-12-09 日本電気株式会社 Method for manufacturing semiconductor device
US6083849A (en) * 1995-11-13 2000-07-04 Micron Technology, Inc. Methods of forming hemispherical grain polysilicon
JPH11111683A (en) * 1997-09-30 1999-04-23 Sony Corp Method for manufacturing semiconductor device
JPH11162876A (en) * 1997-11-28 1999-06-18 Nec Corp Apparatus and method for manufacturing semiconductor device
JP3331999B2 (en) * 1999-02-09 2002-10-07 日本電気株式会社 Manufacturing method of semiconductor thin film
JP2002043274A (en) * 2000-07-25 2002-02-08 Kanto Chem Co Inc Surface treatment agent for polysilicon film and method for surface treatment of polysilicon film using the same
TW452892B (en) * 2000-08-09 2001-09-01 Lin Jing Wei Re-crystallization method of polysilicon thin film of thin film transistor
US6580053B1 (en) * 2000-08-31 2003-06-17 Sharp Laboratories Of America, Inc. Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
KR100737911B1 (en) * 2001-02-01 2007-07-10 삼성전자주식회사 Low temperature polycrystalline silicon thin film transistor manufacturing method
JP4599734B2 (en) * 2001-03-14 2010-12-15 ソニー株式会社 Method for forming polycrystalline semiconductor thin film and method for manufacturing semiconductor device
JP2003133560A (en) * 2001-10-30 2003-05-09 Sony Corp Method for manufacturing thin film transistor
JP2003158135A (en) * 2001-11-26 2003-05-30 Matsushita Electric Ind Co Ltd Method of manufacturing thin film transistor and method of manufacturing display device including the same
US7235466B2 (en) * 2002-10-31 2007-06-26 Au Optronics Corporation Method of fabricating a polysilicon layer
KR100947180B1 (en) * 2003-06-03 2010-03-15 엘지디스플레이 주식회사 Method of manufacturing polysilicon thin film transistor
JP2005349301A (en) * 2004-06-10 2005-12-22 Seiko Epson Corp Cleaning device and cleaning method
US20060240647A1 (en) * 2005-04-25 2006-10-26 Toshiba Matsushita Display Technology Co., Ltd. Film control method and device thereof
JP2006332589A (en) * 2005-04-25 2006-12-07 Toshiba Matsushita Display Technology Co Ltd Method and apparatus for controlling film
KR100753432B1 (en) * 2005-11-08 2007-08-31 경희대학교 산학협력단 Polycrystalline Silicon and its Crystallization Method
JP2007188953A (en) * 2006-01-11 2007-07-26 Toshiba Matsushita Display Technology Co Ltd Method for manufacturing polycrystal silicon layer
JP4001906B2 (en) * 2006-12-22 2007-10-31 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
WO2009057223A1 (en) * 2007-11-02 2009-05-07 Canon Anelva Corporation Surface treating apparatus and method for substrate treatment
RU2431215C1 (en) * 2010-06-02 2011-10-10 Учреждение Российской академии наук Институт физики полупроводников им. А.В. Ржанова Сибирского отделения РАН (ИФП СО РАН) Method of obtaining layer of polycrystalline silicon
CN102021580A (en) * 2010-10-30 2011-04-20 江苏顺风光电科技有限公司 Improved clear water-washing process for solar crystalline silicon wafer
KR101298220B1 (en) * 2012-01-20 2013-08-22 주식회사 엠엠테크 Surface treating system for a substrate having a compact structure and surface treating method for the substrate
JP5964107B2 (en) * 2012-03-29 2016-08-03 株式会社ニューフレアテクノロジー Semiconductor manufacturing apparatus and semiconductor manufacturing method
CN103346065A (en) * 2013-06-08 2013-10-09 上海和辉光电有限公司 Laser annealing method and device

Also Published As

Publication number Publication date
US20150214036A1 (en) 2015-07-30
RU2647561C2 (en) 2018-03-16
RU2016124648A (en) 2017-12-26
CN103681244A (en) 2014-03-26
CN103681244B (en) 2016-09-14
GB2535369A (en) 2016-08-17
WO2015096113A1 (en) 2015-07-02
GB2535369B (en) 2018-12-05
DE112013007733T5 (en) 2017-01-12
KR20160088405A (en) 2016-07-25
JP6286547B2 (en) 2018-02-28
JP2017511592A (en) 2017-04-20
US9287108B2 (en) 2016-03-15
KR101944598B1 (en) 2019-01-31

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